CN101487972A - Mask plate with adjustable permeation rate, production method and mask method thereof - Google Patents
Mask plate with adjustable permeation rate, production method and mask method thereof Download PDFInfo
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- CN101487972A CN101487972A CN 200810056495 CN200810056495A CN101487972A CN 101487972 A CN101487972 A CN 101487972A CN 200810056495 CN200810056495 CN 200810056495 CN 200810056495 A CN200810056495 A CN 200810056495A CN 101487972 A CN101487972 A CN 101487972A
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Abstract
The invention relates to a mask plate with adjustable transmission rate, a manufacturing method and a mask method thereof. The mask plate comprises a substrate on which a transmission area, a non-transmission area and a partial transmission area are formed, and a polarization layer is formed on the partial transmission area. The manufacturing method comprises the following steps: the substrate is deposited with a metal layer, and the metal layer in the first area of the substrate is removed by exposure, development and etching technology; a polarization layer is formed on the substrate to at least cover the first area; by hard pulse laser scanning cineration or etching technology, the first area becomes a partial transmission area and other areas become transmission areas and non-transmission areas. The mask method comprises the following steps: the exposure degree of the light-sensitive lacquer is determined and the polarization direction of the polarization filter element is adjusted; the mask plate is placed on the targeted substrate and exposed; and then the mask plate is moved off. The invention enhances the controllability of the photo-etching technology, lowers the development and production cost and improves the quality of the products.
Description
Technical field
The present invention relates to a kind of mask plate, manufacture method and mask method thereof, particularly a kind of mask plate of adjustable permeation rate, manufacture method and mask method thereof.
Background technology
LCD (Liquid Crystal Display, be called for short LCD) technology has had development by leaps and bounds in nearly ten years, all obtained very much progress from the size of screen to the quality that shows.Along with the continuous expansion that LCD produces, the competition between each production firm also is growing more intense.Each producer is also constantly making great efforts to reduce production cost of products, thereby is improving the competitive power in market when improving constantly properties of product.
LCD is in preparation process such as array base palte and color membrane substrates, and mask plate is the needed important goods, materials and equipments of photoetching process, and the quality of mask plate and cost directly have influence on the quality and the cost of liquid crystal panel.Because mask plate costs an arm and a leg, therefore the mask plate limited amount that exposure machine can load is not influencing under the product quality premise, reduces the photoetching number of times, reducing the quantity of mask plate, is the main direction of present each manufacturer's widespread effort thereby improve speed of production, reduce cost.
At present, prior art mainly adopts a photoetching process to make mask plate, successively passes through metal cladding, laser lithography, etching technics, finally prepares circuitous pattern on quartz or soda substrate.And in the local light carving technology in array base palte and color membrane substrates preparation process, need produce the mask plate of variable partition transmission region transmitance.Mask plate top transmission region mainly is to adopt Slit ﹠amp at present; The Bar channel design, indivedual high-end products adopt the semi-permeable diaphragm design.
In actual use, Slit ﹠amp on the mask plate; The circuitous pattern of Bar channel design is fixed, the material and the thickness of the semi-permeable diaphragm in the semi-permeable diaphragm design are also fixed, therefore the transmitance of the part transmission region of a mask plate is fixed, if produce when needing the change transmitance, need make mask plate again, so cause exploitation and production cost to uprise, and the photoresist thickness of part transmission region and the critical size of other positions can only change simultaneously, can not separately control, the processing quality that circuit design proposes is had relatively high expectations.
Summary of the invention
The mask plate, manufacture method and the mask method thereof that the purpose of this invention is to provide a kind of adjustable permeation rate can be adjusted the transmitance of mask plate easily, improve the controllability of photoetching process, reduce production costs.
For achieving the above object, the invention provides a kind of mask plate of adjustable permeation rate, comprise substrate, be formed with transmission region, non-transmission region and part transmission region on the described substrate, be formed with polarization layer on the described at least part transmission region.
The thickness of described polarization layer is 0.04 μ m～3000 μ m, and further, described substrate is provided with the diaphragm that covers whole base plate.
For achieving the above object, the present invention also provides a kind of manufacture method of mask plate of adjustable permeation rate, comprising:
Step 2, form one deck polarization layer on the substrate of completing steps 1, this polarization layer covers the first area at least;
Wherein, described step 1 can for:
Step 101, on substrate uniform deposition layer of metal layer;
Step 102, on metal level, evenly apply one deck photoresist;
Step 103, use laser scanning technology are with the part resist exposure;
Step 104, the photoresist that will expose by developing process are removed;
Step 105, the metal level that will do not covered by photoresist by etching technics etch away, and form the first area on substrate.
Wherein, described step 1 can also for:
Step 111, on substrate uniform deposition layer of metal layer;
The metal level of first area on the substrate is removed in step 112, the scanning of use intense laser pulse.
Wherein, the first area can be first area with 0.05 μ m～1.0 μ m technology redundancies in the described step 1.
Wherein, described step 2 is specially: forming a layer thickness on the substrate of completing steps 1 is the polarization layer of 0.04 μ m～3000 μ m, and this polarization layer covers the first area at least.
On the technique scheme basis, after step 3, also comprise step: on substrate, form the diaphragm that one deck covers whole base plate.
For achieving the above object, the present invention also further provides a kind of mask method, comprising:
Step 1000, according to the depth of exposure of photoresist, adjust the polarization direction of polarizing filter element on the exposure machine, make the polarization direction of polarization layer on itself and the mask plate be set angle;
Step 2000, mask plate is placed on the target base plate, and exposure;
Step 3000, remove mask plate.
Wherein, described step 1000 is specially:
Step 1001, determine the depth of exposure of photoresist;
Step 1002, determine light transmission rate according to depth of exposure;
Step 1003, according to transmitance=Acos θ, adjust the polarization direction of polarizing filter element on the exposure machine, make the polarization direction of polarization layer on the polarization direction of polarizing filter element on the exposure machine and the mask plate be the θ angle, wherein A is a technological coefficient, and θ is the angle between the polarization direction of polarization layer on the polarization direction of polarizing filter element on the exposure machine and the mask plate.
The invention provides a kind of mask plate, manufacture method and mask method thereof of adjustable permeation rate, by on the part transmission region, forming polarization layer, angle between the polarization direction of polarization layer by adjusting exposure machine polarizing filter element polarization direction and mask plate top transmission region during use, can change the light transmission rate of mask plate top transmission region, reach the purpose that changes photoresist depth of exposure on the target base plate, thereby improved the controllability of photoetching process.Compared with prior art, the polarization direction that the present invention only need adjust the polarizing filter element just can reach the purpose that changes light transmission rate, need not to change mask plate, has lowered the design difficulty of mask plate, has finally reduced exploitation and production cost, has improved product quality.
Below by drawings and Examples, technical scheme of the present invention is described in further detail.
Description of drawings
Fig. 1 is the floor map of the mask plate of adjustable permeation rate of the present invention;
Fig. 2 be among Fig. 1 A-A to cut-open view;
Fig. 3～Fig. 5 is the work synoptic diagram of the mask plate of use adjustable permeation rate of the present invention;
Fig. 6 is the process flow diagram of the manufacture method of the mask plate of adjustable permeation rate of the present invention;
Fig. 7 is the process flow diagram of manufacture method first embodiment of the mask plate of adjustable permeation rate of the present invention;
Fig. 8 a is the synoptic diagram that forms metallic chromium layer in the first embodiment of the invention;
Fig. 8 b is the synoptic diagram that applies photoresist in the first embodiment of the invention;
Fig. 8 c is the synoptic diagram of resist exposure in the first embodiment of the invention;
Fig. 8 d removes the synoptic diagram of exposed photoresist in the first embodiment of the invention;
Fig. 8 e is the synoptic diagram of etching metallic chromium layer in the first embodiment of the invention;
Fig. 8 f is a stripping photoresist synoptic diagram in the first embodiment of the invention;
Fig. 8 g is the synoptic diagram that forms polarization layer in the first embodiment of the invention;
Fig. 8 h is the synoptic diagram that forms transmission region, part transmission region and non-transmission region in the first embodiment of the invention;
Fig. 8 i is the synoptic diagram that forms layer protecting film in the first embodiment of the invention;
Fig. 9 is the process flow diagram of manufacture method second embodiment of the mask plate of adjustable permeation rate of the present invention;
Figure 10 is the process flow diagram of manufacture method the 3rd embodiment of the mask plate of adjustable permeation rate of the present invention;
Figure 11 a is the floor map of resist exposure in the third embodiment of the invention;
Figure 11 b be among Figure 11 a B-B to cut-open view;
Figure 11 c is the floor map that forms transmission region, part transmission region and non-transmission region in the third embodiment of the invention;
Figure 11 d be among Figure 11 c B-B to cut-open view;
Figure 11 e be among Figure 11 c A-A to cut-open view;
Figure 12 is the process flow diagram of manufacture method the 4th embodiment of the mask plate of adjustable permeation rate of the present invention;
Figure 13 a is the floor map of resist exposure in the fourth embodiment of the invention;
Figure 13 b be among Figure 13 a B-B to cut-open view;
Figure 13 c is the floor map that forms the part transmission region in the fourth embodiment of the invention;
Figure 13 d be among Figure 13 c B-B to cut-open view;
Figure 14 is the process flow diagram of mask method of the present invention.
Description of reference numerals
The 1-substrate; The non-transmission region of 2-; 3-part transmission region;
The 4-metal level; The 5-polarization layer; The 6-photoresist;
The 7-laser pulse; The 8-unexposed photoresist; The 9-diaphragm;
10-is exposed photoresist; The 11-orthogonal polarized light; The 12-parallel polarized light;
13-inclination polarized light; 14-polarizing filter element; The 15-target base plate;
16-part exposed photoresist.
Embodiment
Fig. 1 is the floor map of the mask plate of adjustable permeation rate of the present invention, Fig. 2 be among Fig. 1 A-A to cut-open view.As shown in Figure 1 and Figure 2, the mask plate of adjustable permeation rate comprises substrate 1, on substrate 1, be formed with non-transmission region 2 and part transmission region 3, other zone is a transmission region, but be formed with the metal level 4 that polarization layer 5 and mask go out circuitous pattern on the non-transmission region 2, be formed with polarization layer 5 on the part transmission region 3, this polarization layer 5 by with the transmitance of the described part transmission region 3 of exposure machine fit adjustment that produces polarized light.In actual the use, metal level 4 can be metallic chromium layer or other opaque solid metal material layers, and polarization layer 5 can be polaroid or transparent single crystal crystal, and the thickness of polarization layer 5 is 0.04 μ m～3000 μ m.
Fig. 3～Fig. 5 is the work synoptic diagram of the mask plate of use adjustable permeation rate of the present invention.When the mask plate of use adjustable permeation rate of the present invention carries out the channel region mask, need go up polarizing filter element 14, make exposure machine send the polarized light that to adjust the polarization direction to the exposure machine configuration.Adjust the polarization direction of polarizing filter element 14, the polarization direction of polarization layer 5 is vertical on the polarization direction that makes polarizing filter element 14 and the mask plate, just can not see through polarization layer 5 by polarizing filter element 14 formed orthogonal polarized lights 11 like this, then the part transmission region that is covered by polarization layer 5 becomes non-transmission region, like this, have only non-transmission region (metal level 4 and polarization layer 5 overlay areas) and transmission region (metal level 4 and polarization layer 5 uncovered area) on the mask plate.Therefore, orthogonal polarized light 11 passes the resist exposure of transmission region with correspondence position on the target base plate 15, becomes exposed photoresist 10, with the photoresist of non-transmission region correspondence position be unexposed photoresist 8 (as shown in Figure 3).Adjust the polarization direction of polarizing filter element 14, the polarization direction of polarization layer 5 is parallel on the polarization direction that makes polarizing filter element 14 and the mask plate, just can pass completely through polarization layer 5 by polarizing filter element 14 formed parallel polarized lights 12 like this, then the part transmission region that is covered by polarization layer 5 becomes transmission region, like this, have only non-transmission region (metal level 4 overlay areas) and transmission region (metal level 4 uncovered area) on the mask plate.Therefore, parallel polarized light 12 passes the resist exposure of transmission region with correspondence position on the target base plate 15, becomes the photoresist 10 that has exposed, and the photoresist corresponding with non-transmission region is unexposed photoresist 8 (as shown in Figure 4).Above-mentioned two kinds of Exposure modes all are more extreme use-patterns, adjust the polarization direction of polarizing filter element 14, make the polarization direction of polarization layer 5 on the polarization direction of polarizing filter element 14 and the mask plate be the θ angle, the light transmission rate at transmission region place, mask plate top is exactly Acos θ, wherein A is a technological coefficient, like this, form non-transmission region (metal level 4 overlay areas), part transmission region (polarization layer 5 covers metal level 4 unlapped zones simultaneously) and transmission region (metal level 4 and polarization layer 5 uncovered area) on the mask plate.Therefore, pass completely through transmission region by polarizing filter element 14 formed inclination polarized lights 13, resist exposure with correspondence position on the target base plate 15, become exposed photoresist 10, inclination polarized light 13 parts are passed the part transmission region, the photoresist of correspondence position on the target base plate 15 is partly exposed, becomes part exposed photoresist 16, with the photoresist of non-transmission region correspondence position be unexposed photoresist 8 (as shown in Figure 5).When needs are adjusted the degree that photoresist partly exposes on the target base plate 15, only need to regulate the light transmission rate of mask plate top transmission region, promptly regulate the angle θ between the polarization direction of polarization layer 5 on the polarization direction of polarizing filter element 14 and the mask plate.Pass between light transmission rate and the angle θ is: transmitance=Acos θ, wherein, A is a technological coefficient in the formula, and is relevant with the state of the performance of the material of polarization layer 5, polarizing filter element 14 and production equipment.
Therefore, when the mask plate of use adjustable permeation rate of the present invention carries out the channel region mask, can regulate the transmitance of mask plate top transmission region easily, the resist exposure degree at channel region place on the controlled target substrate has improved the controllability of local light carving technology.When in producing, needing to adjust the resist exposure degree, do not need to make mask plate again, saved equipment and assets cost, improved the stability of product quality.
Fig. 6 is the process flow diagram of the manufacture method of the mask plate of adjustable permeation rate of the present invention, is specially:
Step 2, form one deck polarization layer on the substrate of completing steps 1, this polarization layer covers the first area at least;
Further specify the technical scheme of manufacture method of the mask plate of adjustable permeation rate of the present invention below by the actual fabrication process of the mask plate of adjustable permeation rate.
Fig. 7 is the process flow diagram of manufacture method first embodiment of the mask plate of adjustable permeation rate of the present invention, is specially:
Fig. 8 a～Fig. 8 i is the synoptic diagram of manufacture method first embodiment of the mask plate of adjustable permeation rate of the present invention.Fig. 8 a is the synoptic diagram that forms metallic chromium layer in the first embodiment of the invention, and metal level is a metallic chromium layer in the present embodiment, and substrate is a quartz base plate, plates metallic chromium layer 4 by magnetically controlled sputter method equably on the quartz base plate 1 through cleaning and dustless detection.Fig. 8 b is the synoptic diagram that applies photoresist in the first embodiment of the invention, applies one deck photoresist 6 on metallic chromium layer 4 equably.Fig. 8 c is the synoptic diagram of resist exposure in the first embodiment of the invention, by the resist exposure of pulse laser 7 scanning process with the part transmission region, becomes exposed photoresist 10.Fig. 8 d removes the synoptic diagram of exposed photoresist in the first embodiment of the invention, remove by developing process exposed photoresist.Fig. 8 e is the synoptic diagram of etching metallic chromium layer in the first embodiment of the invention, and the metallic chromium layer that will do not covered by photoresist by etching technics etches away.Fig. 8 f is a stripping photoresist synoptic diagram in the first embodiment of the invention, with remaining photoresist lift off.Fig. 8 g is the synoptic diagram that forms polarization layer in the first embodiment of the invention, and polarization layer adopts polaroid in the present embodiment, sticks one deck polaroid 5 on quartz base plate 1, and this polaroid covers whole quartz base plate 1.Fig. 8 h is the synoptic diagram that forms transmission region, part transmission region and non-transmission region in the first embodiment of the invention, by intense pulse laser scanning cineration technics, forms transmission region, part transmission region and non-transmission region on quartz base plate 1.Fig. 8 i is the synoptic diagram that forms layer protecting film in the first embodiment of the invention, forms layer protecting film 9 on the quartz base plate 1 of finishing above-mentioned operation, and this diaphragm 9 covers whole quartz base plate 1.
Matting can be added according to needs of production before any step operation among the above embodiment, the detection operation can be added according to needs of production after any step operation.
Fig. 9 is the process flow diagram of manufacture method second embodiment of the mask plate of adjustable permeation rate of the present invention, is specially:
Part metals chromium layer is removed in step 22, the scanning of use intense laser pulse, forms the first area on quartz base plate;
Second embodiment of the invention is the manufacture method of the mask plate of second kind of adjustable permeation rate.What present embodiment was different with first embodiment is the exposure in step 11～step 16, development and etching procedure to be reduced to directly to remove metallic chromium layer technology by intense pulse laser scanning.The present embodiment process simplification, thus production cost saved, shortened the production cycle.
Figure 10 is the process flow diagram of manufacture method the 3rd embodiment of the mask plate of adjustable permeation rate of the present invention, is specially:
Step 39, on quartz base plate, form the diaphragm that one deck covers whole quartz base plate.
Figure 11 a is the floor map of resist exposure in the third embodiment of the invention, Figure 11 b be among Figure 11 a B-B to cut-open view, be specially: the resist exposure that will form the first area of part transmission region 3, become the photoresist 10 that has exposed, wherein, under the prerequisite of the figure on every side that does not influence the first area, Δ L is evenly amplified as the technology redundancy in the first area, wherein Δ L is 0.05 μ m～1.0 μ m.Figure 11 c forms transmission region in the third embodiment of the invention, the floor map of part transmission region and non-transmission region, Figure 11 d be among Figure 11 c B-B to cut-open view, Figure 11 e be among Figure 11 c A-A to cut-open view, be specially: by intense pulse laser scanning cineration technics, get rid of the metallic chromium layer and the polaroid of quartz base plate second area according to the physical size L of first area, make second area form transmission region, the first area forms the part transmission region 3 that is coated with polaroid 5, forms non-transmission region 2 (metallic chromium layer 4 and polaroid 5 be the overlay area simultaneously) beyond first area and the second area.
Third embodiment of the invention is the manufacture method of the mask plate of the third adjustable permeation rate.What present embodiment was different with first embodiment is, when forming the first area of metallic chromium layer on substrate, not influencing under the prerequisite of figure on every side, 0.05 μ m～1.0 μ m is evenly amplified as the technology redundancy in the first area; When formation is coated with the part transmission region of polaroid, on quartz base plate, form transmission region, part transmission region and non-transmission region by intense pulse laser scanning cineration technics according to the physical size of first area, and make described polaroid cover described part transmission region and non-transmission region, use the method can improve the preparation precision of mask plate.
When sticking one deck polaroid among the present invention first, second and the 3rd embodiment on quartz base plate, also can make a polaroid cover part transmission region, promptly polaroid is of a size of the size of part transmission region; Perhaps polaroid also covers the part of non-transmission region on the basis of cover part transmission region, and promptly the size of polaroid is slightly larger than the size of part transmission region.On the said method basis, among first and second embodiment when forming transmission region, part transmission region and non-transmission region, also can use etching technics to get rid of the metallic chromium layer of second area, make second area form transmission region, the first area forms the part transmission region, forms non-transmission region beyond first area and the second area.
Figure 12 is the process flow diagram of manufacture method the 4th embodiment of the mask plate of adjustable permeation rate of the present invention, is specially:
Step 41, by magnetically controlled sputter method through cleaning and the quartz base plate of dustless detection on plate metallic chromium layer equably;
Step 42, on metallic chromium layer, apply one deck photoresist equably;
Step 43, with the resist exposure of first area, wherein, under the prerequisite that does not influence figure around the first area, 0.05 μ m～1.0 μ m are evenly amplified as the technology redundancy in the first area;
Step 44, the photoresist that will expose by developing process are removed;
Step 45, the metallic chromium layer that will do not covered by photoresist by etching technics etch away;
Step 46, with remaining photoresist lift off;
Step 47, stick one deck polaroid on quartz base plate, this polaroid covers whole quartz base plate;
Step 48, by intense pulse laser scanning cineration technics, according to the first area physical size polaroid outside the first area and metallic chromium layer are got rid of simultaneously, make the first area form the part transmission region that is coated with polaroid, form transmission region beyond the first area;
Step 49, on quartz base plate, form the diaphragm that one deck covers whole quartz base plate.
Figure 13 a is the floor map of resist exposure in the fourth embodiment of the invention, Figure 13 b is that the B-B of Figure 13 a is to cut-open view, be specially: the resist exposure that will form the first area of part transmission region 3, become the photoresist 10 that has exposed, wherein, under the prerequisite that does not influence figure around the first area, Δ L is evenly amplified as the technology redundancy in the first area, wherein Δ L is 0.05 μ m～1.0 μ m.Figure 13 c is the floor map that forms the part transmission region in the fourth embodiment of the invention, Figure 13 d is that the B-B of Figure 13 c is to cut-open view, be specially: the physical size L according to the first area gets rid of polaroid outside the first area and metallic chromium layer simultaneously by intense pulse laser scanning cineration technics, make the first area form the part transmission region 3 that is coated with polaroid 5, form transmission region beyond the first area.
Fourth embodiment of the invention is the manufacture method of the mask plate of the 4th kind of adjustable permeation rate.What present embodiment was different with the 3rd embodiment is, when formation is coated with the part transmission region of polaroid, polaroid outside the first area and metallic chromium layer are got rid of simultaneously according to the physical size of first area by intense pulse laser scanning cineration technics, made the first area form the part transmission region that has only polaroid to cover.Use the method can improve the preparation precision of mask plate.
Figure 14 is the process flow diagram of mask method of the present invention, is specially:
When implementing mask method of the present invention, need go up the polarizing filter element, make exposure machine send the polarized light that to adjust the polarization direction to the exposure machine configuration.When needs prepare the different circuitous pattern of photoresist depth of exposure on the target base plate, only need to adjust the light transmission rate of mask plate top transmission region, promptly adjust the polarization direction of polarizing filter element.At first, need on the target base plate to determine the depth of exposure of the photoresist of part exposure, determine the light transmission rate of mask plate top transmission region according to the depth of exposure of photoresist, again according to the light transmission rate formula: transmitance=Acos θ, adjust the polarization direction of polarizing filter element on the exposure machine, make the polarization direction of polarization layer on the polarization direction of polarizing filter element on the exposure machine and the mask plate be the θ angle, wherein A is a technological coefficient, and θ is the angle between the polarization direction of polarization layer on the polarization direction of polarizing filter element on the exposure machine and the mask plate.Like this, non-transmission region, transmission region and part transmission region have been formed on the mask plate.Then, mask plate is placed on the target base plate, and exposure.Like this, pass completely through transmission region by the formed inclination polarized light of polarizing filter element, the photoresist of target base plate correspondence position is exposed fully, the inclination polarized light partly passes the part transmission region, the photoresist of correspondence position on the target base plate is partly exposed, and the photoresist of non-transmission region correspondence position is unexposed.At last, end exposure is removed mask plate.When using mask method of the present invention to carry out mask, can be easily depth of exposure by photoresist on the polarization direction controlled target substrate of adjusting the polarizing filter element, need not to change or make mask plate again, saved equipment and assets cost, improved the stability of product quality.
It should be noted that at last, above embodiment is only unrestricted in order to technical scheme of the present invention to be described, although the present invention is had been described in detail with reference to preferred embodiment, those of ordinary skill in the art is to be understood that, can make amendment or be equal to replacement technical scheme of the present invention, and not breaking away from the spirit and scope of technical solution of the present invention, it all should be encompassed in the middle of the claim scope of the present invention.
Claims (11)
1, a kind of mask plate of adjustable permeation rate comprises substrate, is formed with transmission region, non-transmission region and part transmission region on the described substrate, it is characterized in that, is formed with polarization layer on the described at least part transmission region.
2, the mask plate of adjustable permeation rate according to claim 1 is characterized in that, described substrate is provided with the diaphragm that covers whole base plate.
3, the mask plate of adjustable permeation rate according to claim 1 is characterized in that, the thickness of described polarization layer is 0.04 μ m～3000 μ m.
4, a kind of manufacture method of mask plate of adjustable permeation rate is characterized in that, comprising:
Step 1, on substrate deposition layer of metal layer, by exposure, development and etching technics, get rid of the metal level of substrate first area;
Step 2, form one deck polarization layer on the substrate of completing steps 1, this polarization layer covers the first area at least;
Step 3, by intense pulse laser scanning ashing or etching technics, get rid of the metal level and the polarization layer of substrate second area, make second area form transmission region, the first area forms the part transmission region, forms non-transmission region beyond first area and the second area.
5, the manufacture method of the mask plate of adjustable permeation rate according to claim 4 is characterized in that, described step 1 is specially:
Step 101, on substrate uniform deposition layer of metal layer;
Step 102, on metal level, evenly apply one deck photoresist;
Step 103, use laser scanning technology are with the part resist exposure;
Step 104, the photoresist that will expose by developing process are removed;
Step 105, the metal level that will do not covered by photoresist by etching technics etch away, and form the first area on substrate.
6, the manufacture method of the mask plate of adjustable permeation rate according to claim 4 is characterized in that, described step 1 is specially:
Step 111, on substrate uniform deposition layer of metal layer;
The metal level of first area on the substrate is removed in step 112, the scanning of use intense laser pulse.
7, according to the manufacture method of the mask plate of claim 5 or 6 described adjustable permeation rates, it is characterized in that described first area is: first area with 0.05 μ m～1.0 μ m technology redundancies.
8, the manufacture method of the mask plate of adjustable permeation rate according to claim 4, it is characterized in that, described step 2 is specially: forming a layer thickness on the substrate of completing steps 1 is the polarization layer of 0.04 μ m～3000 μ m, and this polarization layer covers the first area at least.
9, the manufacture method of the mask plate of adjustable permeation rate according to claim 4 is characterized in that, also comprises step after step 3: form the diaphragm that one deck covers whole base plate on substrate.
10, a kind of mask method that adopts the mask plate of the described adjustable permeation rate of arbitrary claim in the claim 1～3 is characterized in that, comprising:
Step 10, according to the depth of exposure of photoresist, adjust the polarization direction of polarizing filter element on the exposure machine, make the polarization direction of polarization layer on itself and the mask plate be set angle;
Step 20, mask plate is placed on the target base plate, and exposure;
Step 30, remove mask plate.
11, mask method according to claim 10 is characterized in that, described step 10 is specially:
Step 1001, determine the depth of exposure of photoresist;
Step 1002, determine light transmission rate according to depth of exposure;
Step 1003, according to transmitance=Acos θ, adjust the polarization direction of polarizing filter element on the exposure machine, make the polarization direction of polarization layer on the polarization direction of polarizing filter element on the exposure machine and the mask plate be the θ angle, wherein A is a technological coefficient, and θ is the angle between the polarization direction of polarization layer on the polarization direction of polarizing filter element on the exposure machine and the mask plate.
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| Application Number | Priority Date | Filing Date | Title |
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| CN200810056495.4A CN101487972B (en) | 2008-01-18 | 2008-01-18 | Mask method of mask plate with adjustable permeation rate |
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| CN200810056495.4A CN101487972B (en) | 2008-01-18 | 2008-01-18 | Mask method of mask plate with adjustable permeation rate |
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| CN101487972B CN101487972B (en) | 2014-09-10 |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101963752A (en) * | 2009-07-24 | 2011-02-02 | 中芯国际集成电路制造(上海)有限公司 | Manufacturing method of photomask |
| CN102243444A (en) * | 2010-05-14 | 2011-11-16 | 北京京东方光电科技有限公司 | Exposure equipment, mask plate and exposure method |
| CN101995762B (en) * | 2009-08-19 | 2014-08-06 | 北京京东方光电科技有限公司 | Mask and preparation method thereof |
| CN111157132A (en) * | 2020-01-02 | 2020-05-15 | 西北工业大学 | Manufacturing method of passive flexible temperature sensor based on micromachining process |
| CN112034675A (en) * | 2020-09-08 | 2020-12-04 | 南京中电熊猫液晶显示科技有限公司 | Mask, pattern making device and pattern making method |
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| JP4579146B2 (en) * | 2005-12-06 | 2010-11-10 | 株式会社 日立ディスプレイズ | Display device and planar light source device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101963752A (en) * | 2009-07-24 | 2011-02-02 | 中芯国际集成电路制造(上海)有限公司 | Manufacturing method of photomask |
| CN101995762B (en) * | 2009-08-19 | 2014-08-06 | 北京京东方光电科技有限公司 | Mask and preparation method thereof |
| CN102243444A (en) * | 2010-05-14 | 2011-11-16 | 北京京东方光电科技有限公司 | Exposure equipment, mask plate and exposure method |
| CN102243444B (en) * | 2010-05-14 | 2013-04-10 | 北京京东方光电科技有限公司 | Exposure equipment, mask plate and exposure method |
| US8502956B2 (en) | 2010-05-14 | 2013-08-06 | Beijing Boe Optoelectronics Technology Co., Ltd. | Exposure apparatus, mask plate and exposing method |
| US9195143B2 (en) | 2010-05-14 | 2015-11-24 | Beijing Boe Optoelectronics Technology Co., Ltd. | Mask plate and exposing method |
| CN111157132A (en) * | 2020-01-02 | 2020-05-15 | 西北工业大学 | Manufacturing method of passive flexible temperature sensor based on micromachining process |
| CN112034675A (en) * | 2020-09-08 | 2020-12-04 | 南京中电熊猫液晶显示科技有限公司 | Mask, pattern making device and pattern making method |
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| CN101487972B (en) | 2014-09-10 |
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