CN101963752A - Manufacturing method of photomask - Google Patents
Manufacturing method of photomask Download PDFInfo
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- CN101963752A CN101963752A CN2009100553649A CN200910055364A CN101963752A CN 101963752 A CN101963752 A CN 101963752A CN 2009100553649 A CN2009100553649 A CN 2009100553649A CN 200910055364 A CN200910055364 A CN 200910055364A CN 101963752 A CN101963752 A CN 101963752A
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- layer
- phase deviation
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Abstract
The invention relates to a manufacturing method of an attenuated phase shifting photomask, comprising the steps of: forming a phase shifting layer on a transparent substrate and forming a light resisting layer on the phase shifting layer; forming a patterned photoresist layer on the light resisting layer; etching the light resisting layer by taking the patterned photoresist layer as a mask so as to form a patterned light resisting layer; etching the phase shifting layer via a dry etching method by taking the patterned light resisting layer as a mask; obtaining the feature size of the phase shifting layer, comparing whether the feature size value of the phase shifting layer is less than a predetermined value, and etching the phase shifting layer again via a wet etching method; and removing the light resisting layer and adding a transparent film to complete the manufacturing. After etching the phase shifting layer via the dry etching method, if the measurement shows that the feature size of the phase shifting layer is less than the predetermined value, the phase shifting layer is corrected by using the wet etching method without remanufacturing the photomask, therefore, the aim of saving cost is achieved.
Description
Technical field
The present invention relates to semiconductor fabrication, relate in particular to a kind of method for making of light shield.
Background technology
Light shield technology claims that also masking process is an important flow process during semiconductor is made.The light shield type that is applied in wafer manufacturing field mainly is binary intensity light shield and attenuation type phase displacement light shield.
The manufacturing process of binary intensity light shield comprises, one quartz base plate is provided, on this quartz base plate, form the layer of metal layer, on metal level, form one deck photoresist then, behind exposure imaging, form the photoresist layer of patterning, be mask with the photoresist layer of patterning more afterwards, via dry ecthing or wet etching processing procedure etch metal layers.After photoresist layer removed fully, add a transparent diaphragm, just finished the making of binary intensity light shield.
Along with dwindling of semiconductor element size, generally all can use the slit-type light shield, the diffraction effect that the slit-type light shield is caused is bigger, influence the exposure uniformity coefficient of photoresistance, it is residual to tend to produce unnecessary photoresistance after development, and attenuation type phase displacement light shield can solve the inhomogeneous and not high problem of precision of exposure simultaneously.
In addition, well-known, etching has two kinds of basic modes: a kind of is dry etching, and another kind is a wet etching.Because dry etching adopts physics formula bump, be anisotropic etching, therefore can obtain good size Control, can realize the conversion of trickle figure, can satisfy critical size (CD more and more stricter in the semiconductor fabrication process, Critical Dimension) requirement becomes the first-selected etching mode of sub-micron and following size gradually.
Referring to Fig. 1, the manufacturing process of attenuation type phase displacement light shield comprises:
S101 provides a transparency carrier, forms the phase deviation layer on substrate, forms photoresist layer on the phase deviation layer.
S102, spin coating photoresist on photoresist layer through exposure imaging, forms the photoresist layer of patterning; Precision in order to ensure the critical size of the phase deviation layer that needs at last, can carry out critical size (ADI to the photoresist layer of patterning, After Develop CD Measurement) measurement, if the critical size that records is less than normal more more than this technology predetermined value, can rule of thumb replenish etching in case of necessity.
S103 is a mask with the photoresist layer of patterning, and dry method or wet etching photoresist layer form patterned light blockage layer; Precision in order to ensure the critical size of the phase deviation layer that needs at last, can carry out critical size (AEI to the photoresist layer of patterning, After Etch CD Measurement) measurement (critical size of indirect reaction photoresist layer), if the critical size that records is less than normal more more than this technology predetermined value, can rule of thumb replenish etching in case of necessity.
S104 removes photoresist layer.Precision in order to ensure the critical size of the phase deviation layer that needs at last, can carry out critical size (ASI again this moment to the patterned light blockage layer that exposes, After Strip CD Measurement) measurement, if the critical size that records is less than normal more more than this technology predetermined value, can rule of thumb replenish etching in case of necessity, the additional etching meeting of this moment causes the photoresist layer attenuation, but the attenuation ratio is less, and photoresist layer finally will be removed, therefore to the not influence of follow-up technology.
S105 is a mask with the patterned light blockage layer, dry etching phase deviation layer.Dry etching can obtain good size Control, can realize the conversion of trickle figure.After this technology, the characteristic dimension of the phase deviation layer of resulting patterning promptly is final characteristic dimension.If this moment is less than normal than predetermined value through measuring the characteristic dimension of finding the phase deviation layer, then can only change the size of preceding road technology, all make again, if be etched with the purpose that expectation reaches expansion phase deviation layer critical size because replenish photoresist layer, phase deviation layer this moment again, then the ion free radical will certainly cause substrate and more go deep into ablation, causes the damage of light shield.Referring to Fig. 2, shown photoresist layer, phase deviation layer have been replenished etched consequence, wherein 10, substrate, 11, the phase deviation layer, 12, photoresist layer.
S106 removes photoresist layer, adds a transparent diaphragm, finishes making.
Manufacturing process about more attenuation type phase displacement light shield can also be the Chinese invention patent " light shield and manufacture method thereof " of CN1740909A with reference to publication number.
Summary of the invention
Technical matters to be solved by this invention provides a kind of method for making of attenuation type phase displacement light shield of improvement, to overcome in the prior art with the patterned light blockage layer is mask, after the dry etching phase deviation layer, less than normal through characteristic dimension that measure to find the phase deviation layer than predetermined value, can not replenish again and be etched with the deficiency that makes that the characteristic dimension of phase deviation layer meets the demands.
To achieve these goals, the present invention adopts the method for making of following attenuation type phase displacement light shield:
Transparency carrier is provided, on substrate, forms the phase deviation layer, on the phase deviation layer, form photoresist layer;
On photoresist layer, form the photoresist layer of patterning;
Photoresist layer with patterning is a mask, and the etching photoresist layer forms patterned light blockage layer;
With the patterned light blockage layer is mask, dry etching phase deviation layer;
Obtain the characteristic dimension of phase deviation layer, relatively the characteristic dimension value of phase deviation layer is compared the amount less than normal of predetermined value, adopts wet process that the phase deviation layer is carried out etching again;
Remove photoresist layer, add transparent diaphragm, finish making.
Because the employing of technique scheme, the present invention has the following advantages: wet etching is to utilize solution corrosion, be isotropic etching, be easy to realize sideetching, and, can reach an amount of (it is following to be generally 10 nanometers) and revise the phase deviation layer and the purpose of substrate not being had influence by selecting not the etching liquid with the substrate reaction.Thus, be mask with the patterned light blockage layer, after the dry etching phase deviation layer, through measuring the characteristic dimension words less than normal of finding the phase deviation layer than predetermined value, can also revise the phase deviation layer, and needn't make light shield again, can reach the purpose of saving cost.
Description of drawings
Fig. 1 is the manufacturing process process flow diagram of existing attenuation type phase displacement light shield;
Fig. 2 has shown in the prior art photoresist layer, phase deviation layer has been replenished etched consequence;
Fig. 3 is the manufacturing process process flow diagram of the attenuation type phase displacement light shield of the present invention's proposition;
Fig. 4 a to 4f is the process principle figure corresponding to Fig. 3.
Embodiment
For above-mentioned purpose of the present invention, feature and advantage can be become apparent more, the specific embodiment of the present invention is described in detail below in conjunction with accompanying drawing.Certainly the present invention is not limited to this specific embodiment, and the known general replacement of one of ordinary skilled in the art is encompassed in protection scope of the present invention far and away.
The present invention utilizes synoptic diagram to describe in detail, when the embodiment of the invention is described in detail in detail, for convenience of explanation, the synoptic diagram of expression structure can be disobeyed general ratio and be done local the amplification, should be with this as limitation of the invention, in addition, in the making of reality, should comprise the three dimensions size of length, width and the degree of depth.
Manufacturing process referring to attenuation type phase displacement light shield shown in Figure 3 comprises the steps:
S201 referring to Fig. 4 a, provides a transparency carrier 10, and the material of described substrate 10 can be quartzy or other transparent materials.On substrate 10, form phase deviation layer 11, the mode that forms can be to collimate sputter (collimated sputtering) or extra show shade (field screen) when using chemical vapor deposition with low temperature, the material of phase deviation layer 11 can be a metal silicide, metal fluoride, the metallic silicon oxide, metal silicon nitride, the metallic silicon oxides of nitrogen, the metallic silicon oxycarbide, the metallic silicon carbonitride, the metallic silicon carbon nitrogen oxide, alloy, thin metal film, carbonide, oxycarbide and combination thereof, the metal that uses that wherein can use separately or arrange in pairs or groups comprises molybdenum, tantalum, zirconium, chromium or tungsten etc., material commonly used is MoSi.On phase deviation layer 11, form photoresist layer 12, the chromium film of these photoresist layer 12 preferred thickness 700-2000 dusts, the perhaps chromium oxide film of the chromium film of above-mentioned thickness range collocation 100-300 dust, photoresist layer 12 can also be selected carbonide, oxycarbide or stable black resin for use.
S202 forms the photoresist layer of patterning on photoresist layer.
Spin coating photoresist on photoresist layer 12 through laser or electron beam exposure, through developing, forms the photoresist layer 13 of patterning, referring to Fig. 4 b.
This photoresist is carved can be positive photoetching rubber, and after positive photoetching rubber was exposed, the character of sensitization part can change, and after development in can be removed; And another kind of photoresist, after promptly negative photoresist was exposed, the character of sensitization part was changed, but this specific character is just opposite with the characteristic of positive photoetching rubber, and its sensitization part is left in developing process in the future.The present invention is unrestricted to photoresist.
Precision in order to ensure the critical size of the phase deviation layer that needs at last, can carry out critical size (ADI to the photoresist layer 13 of patterning with scanning electron microscope, After Develop CD Measurement) measurement, if the critical size that records is less than normal more more than this technology predetermined value, can rule of thumb replenish etching in case of necessity, referring to dotted portion among the figure.In real manufacturing process, because measuring process can be introduced many particulates, cause the defective on the photomask to increase, do not adopt ADI usually.
S203 is a mask with the photoresist layer of patterning, and the etching photoresist layer forms patterned light blockage layer.
Referring to Fig. 4 c, be mask with patterned photoresist layer 13, adopt dry method or wet etching photoresist layer 12, form patterned light blockage layer.
Precision in order to ensure the critical size of the phase deviation layer that needs at last, can carry out critical size (AEI to patterned light blockage layer 12 with scanning electron microscope, After Etch CD Measurement) measurement, this measurement can be direct at photoresist layer 12, also can be at photoresist layer 13 and reflection indirectly.If the critical size that records is less than normal more more than this technology predetermined value, can rule of thumb replenish etching in case of necessity, referring to dotted portion among the figure.
S204 removes photoresist layer.
Referring to Fig. 4 d, remove photoresist layer 13, exposure patterned light blockage layer 12 with dry method or wet method.
Precision in order to ensure the critical size of the phase deviation layer that needs at last, can also carry out critical size (ASI again this moment to patterned light blockage layer 12, After Strip CD Measurement) measurement, if the critical size that records is less than normal more more than this technology predetermined value, can rule of thumb replenish etching in case of necessity, referring to dotted portion among the figure.The additional etching meeting of this moment causes photoresist layer 12 attenuation, but the attenuation ratio is less, and photoresist layer 12 finally will be removed, therefore to the not influence of follow-up technology.
Be noted that, above ADI, AEI, ASI step belong to prior art, whether need to measure, whether need rule of thumb to replenish etching, replenish etched ablation amount by the technician according to conditions such as base station precision, photomask materials, decide by experience.These three steps can adopt simultaneously, also can adopt one of them or any two according to demand.
S205 is mask with the patterned light blockage layer, dry etching phase deviation layer.
Referring to Fig. 4 e, be mask with patterned light blockage layer 12, dry etching phase deviation layer 11.Dry etching can obtain good size Control, can realize the conversion of trickle figure.
S206 obtains the characteristic dimension of phase deviation layer, and relatively the characteristic dimension value of phase deviation layer is compared the amount less than normal of predetermined value, adopts wet process that the phase deviation layer is carried out etching again.
Referring to Fig. 4 f, this moment can only be by the critical size of scanning electron microscope to the measurement indirect reaction phase deviation layer 11 of photoresist layer 12.
If the phase deviation layer critical size CD that records is less than normal than final technology predetermined value, adopt wet process that the phase deviation layer is carried out etching again.For example phase deviation layer 11 is MoSi, and the solution that this wet process adopted is NH
4OH and H
2O
2Mixed solution, this mixed solution has oxidation, complex reaction to MoSi, and not with quartz reaction.In the present embodiment, NH
4OH solution and H
2O
2The mass concentration of solution is respectively 25～35% scopes; NH
4OH solution and H
2O
2The volume ratio of solution and water can be 1: (1～3): (80～130) scope, temperature of reaction can be 25 degrees centigrade to 50 degrees centigrade scopes.
Compare the amount less than normal of predetermined value, the selected predetermined etching period of etching condition according to phase deviation layer critical size CD, CD reaches preset range up to phase deviation layer critical size.
For example, adopt mass concentration 29%NH
4OH, 30%H
2O
2, NH
4OH solution and H
2O
2The volume ratio of solution and water is 1: 2: 127, and 40 degrees centigrade of temperature can enlarge 3nm with phase deviation layer critical size CD in 180 seconds.
Being an embodiment only below, is not the qualification for wet etching solution, technology, should be understood to, and at different phase deviation layer 11 materials, can correspondingly select suitable etching solution and technology for use.
From Fig. 4 f, and in conjunction with the principle of wet etching as can be known, adopt wet etching to adjust phase deviation layer critical size CD, the substrate 10 of etching solution and quartzy material is not reaction almost, and substrate 10 is not almost influenced.And phase deviation layer top be owing to there is the protection of photoresist layer, can be owing to wet etching produces defective.
S207 removes photoresist layer, adds a transparent diaphragm, finishes making.
Though the present invention with preferred embodiment openly as above; but it is not to be used for limiting claim; any those skilled in the art without departing from the spirit and scope of the present invention; can make possible change and modification, so protection scope of the present invention should be as the criterion with the scope that claim of the present invention was defined.
Claims (5)
1. the manufacturing process of a light shield comprises the steps:
Transparency carrier is provided, on substrate, forms the phase deviation layer, on the phase deviation layer, form photoresist layer;
On photoresist layer, form the photoresist layer of patterning;
Photoresist layer with patterning is a mask, and the etching photoresist layer forms patterned light blockage layer;
With the patterned light blockage layer is mask, dry etching phase deviation layer;
Obtain the characteristic dimension of phase deviation layer, relatively the characteristic dimension value of phase deviation layer is compared the amount less than normal of predetermined value, adopts wet process that the phase deviation layer is carried out etching again;
Remove photoresist layer, add transparent diaphragm.
2. the manufacturing process of light shield according to claim 1, it is characterized in that: the material of described phase deviation layer is MoSi, described wet process adopts NH
4OH solution and H
2O
2The mixed solution of solution.
3. the manufacturing process of light shield according to claim 2 is characterized in that: described NH
4OH solution and H
2O
2The mass concentration of solution is respectively 25～35%; NH
4OH solution and H
2O
2The volume ratio of solution and water can be 1: (1～3): (80～130) scope, temperature of reaction can be 25 degrees centigrade to 50 degrees centigrade scopes.
4. the manufacturing process of light shield according to claim 3 is characterized in that: described NH
4The mass concentration of OH solution is 29%, H
2O
2The mass concentration of solution is 30%, NH
4OH solution and H
2O
2The volume ratio of solution and water is 1: 2: 127,40 degrees centigrade of temperature of reaction.
5. the manufacturing process of light shield according to claim 1 is characterized in that: the method for the described characteristic dimension that obtains the phase deviation layer is for by the critical size to the measurement indirect reaction phase deviation layer of photoresist layer critical size.
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|---|---|---|---|
| CN2009100553649A CN101963752A (en) | 2009-07-24 | 2009-07-24 | Manufacturing method of photomask |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009100553649A CN101963752A (en) | 2009-07-24 | 2009-07-24 | Manufacturing method of photomask |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110441985A (en) * | 2019-08-15 | 2019-11-12 | 京东方科技集团股份有限公司 | Mask plate and preparation method thereof and use mask plate carry out patterned method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1808269A (en) * | 2004-12-30 | 2006-07-26 | 中国台湾积体电路制造股份有限公司 | Process control method and semiconductor manufacture method |
| CN1817484A (en) * | 2001-10-03 | 2006-08-16 | Hoya株式会社 | Coating film drying method, coating film forming method, and coating film forming apparatus |
| CN101487972A (en) * | 2008-01-18 | 2009-07-22 | 北京京东方光电科技有限公司 | Mask plate with adjustable permeation rate, production method and mask method thereof |
-
2009
- 2009-07-24 CN CN2009100553649A patent/CN101963752A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1817484A (en) * | 2001-10-03 | 2006-08-16 | Hoya株式会社 | Coating film drying method, coating film forming method, and coating film forming apparatus |
| CN1808269A (en) * | 2004-12-30 | 2006-07-26 | 中国台湾积体电路制造股份有限公司 | Process control method and semiconductor manufacture method |
| CN101487972A (en) * | 2008-01-18 | 2009-07-22 | 北京京东方光电科技有限公司 | Mask plate with adjustable permeation rate, production method and mask method thereof |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110441985A (en) * | 2019-08-15 | 2019-11-12 | 京东方科技集团股份有限公司 | Mask plate and preparation method thereof and use mask plate carry out patterned method |
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