CN111157132A - Manufacturing method of passive flexible temperature sensor based on micromachining process - Google Patents
Manufacturing method of passive flexible temperature sensor based on micromachining process Download PDFInfo
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- CN111157132A CN111157132A CN202010002524.XA CN202010002524A CN111157132A CN 111157132 A CN111157132 A CN 111157132A CN 202010002524 A CN202010002524 A CN 202010002524A CN 111157132 A CN111157132 A CN 111157132A
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- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
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Abstract
The invention discloses a method for manufacturing a passive flexible temperature sensor based on a micromachining process, which comprises the following steps: arranging a flexible coil and a micro electrode, aligning and transferring temperature sensitive materials, aligning and bonding an IC chip, and packaging. The method has low cost, can be carried out at normal temperature and normal pressure, has low requirement on the environment, can be industrially established for processing the high-precision passive flexible temperature sensor, and can greatly improve the processing efficiency.
Description
Technical Field
The invention relates to the field of microelectronics, in particular to a manufacturing method of a passive flexible temperature sensor based on a micro-processing technology.
Background
Most of traditional temperature sensors are based on semiconductor materials, are large in size and weight, have extremely limited portability and flexibility, and are not suitable for wearable electronic equipment for monitoring vital signs of human bodies. In addition, the conventional microelectrode processing technology generally uses the technologies of photoetching, plasma etching and the like. Webb et al report an ultra-thin, compliant, skin-like temperature sensor array using a thin (50 nm) narrow (20 μm) gold film, serpentine-shaped fabricated using microlithography techniques. (WebbRC, Bonifas AP, Behnaz A et al (2013) Ultrathi consistent devices for prepurification and continuous thermal characterization of human skin. Nat. Mater 12: 938) 944), and the flexible wire is manufactured by using a photoetching or plasma etching method alone, so that the processing technology is difficult, the cost is high, certain requirements on cleanliness, temperature, air pressure and the like of a processing environment are required, and the flexible wire cannot be manufactured rapidly in a large area, which limits the development of circuits.
Disclosure of Invention
The invention aims to provide a method for manufacturing a passive flexible temperature sensor based on a micro-machining process.
The invention has the innovation points that the method has low cost, can be carried out at normal temperature and normal pressure, has low requirement on the environment, can be industrially established for processing the high-precision passive flexible temperature sensor in the assembly line operation mode, and can greatly improve the processing efficiency.
In order to achieve the purpose, the technical scheme of the invention is as follows: a manufacturing method of a passive flexible temperature sensor based on a micro-machining process comprises the following steps:
(1) and (3) arranging a flexible coil and a micro electrode: printing a flexible coil and a micro electrode on a flexible substrate by using a microelectronic technology or plating a metal layer on the flexible substrate and then etching the metal layer on the flexible substrate to obtain the flexible coil and the micro electrode on the flexible substrate, wherein the flexible substrate with the flexible coil and the micro electrode is a flexible substrate for one-time processing;
(2) temperature sensitive material alignment transfer: after sintering, aligning and transferring the temperature sensitive material to a micro electrode of a primary processing flexible substrate, and overlapping the micro electrode of the primary processing flexible substrate to obtain a secondary processing flexible substrate of the temperature sensing module with temperature sensitive characteristics;
(3) aligning and bonding the IC chip; bonding an IC chip on a pin of a micro electrode on the secondary processing flexible substrate to obtain a tertiary processing flexible substrate with a flexible RFID passive sensing unit;
(4) packaging: coating a liquid flexible material on the surface of the flexible substrate processed for the third time to encapsulate the flexible RFID passive sensing unit, and solidifying the liquid flexible material to form a finished product.
Furthermore, the metal layer in the step (1) is plated by vacuum evaporation, sputtering, ion plating or physical vapor deposition.
Further, the etching method in the step (1) is laser direct writing, the flexible coil and the micro electrode are left after laser etching, and the rest metal layers are removed by laser. The laser direct writing etching can perform rapid and accurate etching of large-area arrayed electrode patterns on the accurate positioning circuit positions of various functional materials without selectivity, and makes up the limitation of photoetching mask patterns and the defect of large-area etched arrayed electrodes.
Further, the etching method in the step (1) is a method combining laser direct writing and photolithography. The method not only realizes the rapid and accurate etching of large-area arrayed electrode patterns by accurately positioning the circuit position, but also makes up the difference between the laser direct writing precision and the photoetching process, and improves the resolution of the laser direct writing process to the photoetching level.
And further, the photoresist is positive photoresist during photoetching, the positive photoresist is coated on the surface of the metal layer in a rotating mode and then is subjected to photoetching exposure, the photoresist is placed under a mask plate with a flexible coil and a micro electrode pattern during photoetching exposure, the pattern of the mask plate is light-tight, a photoetching developer is used for developing after photoetching exposure, the part without the photoresist is directly written by laser after development, and finally the photoresist is removed by acetone to obtain the flexible substrate which is.
And further, the photoresist is a negative photoresist during photoetching, the negative photoresist is coated on the surface of the metal layer in a rotating mode and then photoetching exposure is carried out, the photoresist is placed under a mask plate with a flexible coil and a micro electrode pattern during photoetching exposure, the pattern of the mask plate is transparent, the non-pattern position is opaque, a photoetching developer is used for developing after photoetching exposure, the part without the photoresist is directly written by laser after development, and finally the photoresist is removed by acetone to obtain the flexible substrate which is processed once.
Further, the flexible substrate is made of polyethylene terephthalate, polyimide, polydimethylsiloxane, polymethyl methacrylate, polyethylene naphthalate or polyvinyl chloride.
Further, the liquid flexible material is polydimethylsiloxane
Further, the coating method in the step (4) is brush coating, film scraping or spin coating.
Furthermore, the thickness of the metal layer is 30 nm-100 μm, and the width of the flexible coil is 5-20 μm.
The invention has the beneficial effects that:
1. the method has low cost, can be carried out at normal temperature and normal pressure, has low requirement on the environment, can be industrially established for processing the high-precision passive flexible temperature sensor, and can greatly improve the processing efficiency.
2. In the invention, laser direct writing etching is used, so that the rapid and accurate etching of large-area arrayed electrode patterns can be carried out on various functional materials at accurate positioning circuit positions without selectivity, and the limitation of photoetching mask patterns and the defect of large-area etched arrayed electrodes are overcome.
3. According to the invention, the laser direct writing and the photoetching are combined for etching, so that the rapid and accurate etching of a large-area arrayed electrode pattern is realized by accurately positioning the circuit position, the difference between the laser direct writing precision and the photoetching process is made up, and the resolution of the laser direct writing process is improved to the photoetching level.
4. The invention greatly reduces the time required by the mass production of the sensor by utilizing the mutual combination of the mature processes, greatly promotes the development of a flexible circuit, and the passive flexible temperature sensor can be matched with a mobile phone APP for use.
Drawings
FIG. 1 is a schematic structural diagram of the product of the present invention.
In the figure: 1 is an IC chip, 2 is a pin of a micro electrode, 3 is a flexible coil, 4 is a micro electrode, and 5 is a sintered temperature sensitive material.
Detailed Description
The technical solution in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings.
Example 1: a passive flexible temperature sensor manufacturing method based on a micromachining process comprises the following steps: printing a flexible coil and a micro electrode on a flexible substrate by using a microelectronic technology, wherein the flexible substrate is made of polyethylene terephthalate, the flexible substrate with the flexible coil and the micro electrode is a one-step processing flexible substrate, and the width of the flexible coil on the one-step processing flexible substrate is 5 mu m; temperature sensitive material alignment transfer: after sintering, aligning and transferring the temperature sensitive material to a micro electrode of a primary processing flexible substrate, and overlapping the micro electrode of the primary processing flexible substrate to obtain a secondary processing flexible substrate of the temperature sensing module with temperature sensitive characteristics; aligning and bonding the IC chip; bonding an IC chip on a pin of a micro electrode on the secondary processing flexible substrate to obtain a tertiary processing flexible substrate with a flexible RFID passive sensing unit; packaging: coating a liquid flexible material on the surface of the flexible substrate processed for the third time to encapsulate the flexible RFID passive sensing unit, wherein the liquid flexible material is polydimethylsiloxane, the coating method is brush coating, and the liquid flexible material is solidified to form a finished product.
Example 2: a passive flexible temperature sensor manufacturing method based on a micromachining process comprises the following steps: plating a metal layer on a flexible substrate, wherein the thickness of the metal layer is 30nm, the flexible substrate is made of polyimide, the metal layer on the flexible substrate is etched by adopting vacuum evaporation during metal plating, the etching method is laser direct writing, a flexible coil and a micro electrode are left after laser etching, the rest metal layers are knocked off by laser, the flexible coil and the micro electrode on the flexible substrate are obtained after etching, the flexible substrate with the flexible coil and the micro electrode is a one-step processing flexible substrate, and the width of the flexible coil on the one-step processing flexible substrate is 5 micrometers; temperature sensitive material alignment transfer: after sintering, aligning and transferring the temperature sensitive material to a micro electrode of a primary processing flexible substrate, and overlapping the micro electrode of the primary processing flexible substrate to obtain a secondary processing flexible substrate of the temperature sensing module with temperature sensitive characteristics; aligning and bonding the IC chip; bonding an IC chip on a pin of a micro electrode on the secondary processing flexible substrate to obtain a tertiary processing flexible substrate with a flexible RFID passive sensing unit; packaging: coating a liquid flexible material on the surface of the flexible substrate processed for the third time to encapsulate the flexible RFID passive sensing unit, wherein the liquid flexible material is Ecoflex, the coating method is film scraping, and the liquid flexible material is solidified to form a finished product.
Example 3: a passive flexible temperature sensor manufacturing method based on a micromachining process comprises the following steps: plating a metal layer on the flexible substrate, wherein the thickness of the metal layer is 1 mu m, the material of the flexible substrate is polydimethylsiloxane, sputtering is adopted for plating the metal layer, etching a metal layer on a flexible substrate, wherein the etching method is a method combining laser direct writing and photoetching, photoresist is positive photoresist during photoetching, the positive photoresist is coated on the surface of the metal layer in a rotating manner and then is subjected to photoetching exposure, the positive photoresist is placed under a mask plate with flexible coils and miniature electrode patterns during photoetching exposure, the pattern of the mask plate is light-tight, the positive photoresist is developed by using a photoetching developer after the photoetching exposure, the part without the photoresist is directly written by the laser after the development, finally, the photoresist is removed by using acetone to obtain a once-processed flexible substrate, the once-processed flexible substrate is provided with the flexible coils and the; temperature sensitive material alignment transfer: after sintering, aligning and transferring the temperature sensitive material to a micro electrode of a primary processing flexible substrate, and overlapping the micro electrode of the primary processing flexible substrate to obtain a secondary processing flexible substrate of the temperature sensing module with temperature sensitive characteristics; aligning and bonding the IC chip; bonding an IC chip on a pin of a micro electrode on the secondary processing flexible substrate to obtain a tertiary processing flexible substrate with a flexible RFID passive sensing unit; packaging: coating a liquid flexible material on the surface of the flexible substrate processed for the third time to encapsulate the flexible RFID passive sensing unit, wherein the liquid flexible material is polydimethylsiloxane, the coating method is spin coating, and the liquid flexible material is solidified to form a finished product.
Example 4: a passive flexible temperature sensor manufacturing method based on a micromachining process comprises the following steps: plating a metal layer on the flexible substrate, wherein the thickness of the metal layer is 100 mu m, the flexible substrate is made of polymethyl methacrylate, ion plating is adopted during plating the metal layer, etching a metal layer on a flexible substrate, wherein the etching method is a method combining laser direct writing and photoetching, photoresist is negative photoresist during photoetching, the negative photoresist is coated on the surface of the metal layer in a rotating manner and then is subjected to photoetching exposure, the negative photoresist is placed under a mask plate with flexible coils and miniature electrode patterns during photoetching exposure, the pattern part of the mask plate is transparent, and the non-pattern part is opaque, a photoetching developer is used for developing after photoetching exposure, the part without the photoresist is directly written by laser after development, finally, the photoresist is removed by acetone to obtain a once-processed flexible substrate, the once-processed flexible substrate is provided with the flexible coils and the miniature electrodes, and the width of the flexible coils on the once-processed flexible substrate is 20 mu m; temperature sensitive material alignment transfer: after sintering, aligning and transferring the temperature sensitive material to a micro electrode of a primary processing flexible substrate, and overlapping the micro electrode of the primary processing flexible substrate to obtain a secondary processing flexible substrate of the temperature sensing module with temperature sensitive characteristics; aligning and bonding the IC chip; bonding an IC chip on a pin of a micro electrode on the secondary processing flexible substrate to obtain a tertiary processing flexible substrate with a flexible RFID passive sensing unit; packaging: coating a liquid flexible material on the surface of the flexible substrate processed for the third time to encapsulate the flexible RFID passive sensing unit, wherein the liquid flexible material is Ecoflex, the coating method is spin coating, and the liquid flexible material is solidified to form a finished product.
Example 5: referring to example 4, the material of the flexible substrate was polyethylene naphthalate or polyvinyl chloride.
The described embodiments are only some embodiments of the invention, not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Claims (10)
1. A manufacturing method of a passive flexible temperature sensor based on a micromachining process is characterized by comprising the following steps:
(1) and (3) arranging a flexible coil and a micro electrode: printing a flexible coil and a micro electrode on a flexible substrate by using a microelectronic technology or plating a metal layer on the flexible substrate and then etching the metal layer on the flexible substrate to obtain the flexible coil and the micro electrode on the flexible substrate, wherein the flexible substrate with the flexible coil and the micro electrode is a flexible substrate for one-time processing;
(2) temperature sensitive material alignment transfer: after sintering, aligning and transferring the temperature sensitive material to a micro electrode of a primary processing flexible substrate, and overlapping the micro electrode of the primary processing flexible substrate to obtain a secondary processing flexible substrate of the temperature sensing module with temperature sensitive characteristics;
(3) aligning and bonding the IC chip; bonding an IC chip on a pin of a micro electrode on the secondary processing flexible substrate to obtain a tertiary processing flexible substrate with a flexible RFID passive sensing unit;
(4) packaging: coating a liquid flexible material on the surface of the flexible substrate processed for the third time to encapsulate the flexible RFID passive sensing unit, and solidifying the liquid flexible material to form a finished product.
2. The method for manufacturing the passive flexible temperature sensor based on the micromachining process as claimed in claim 1, wherein the metal layer is plated in step (1) by vacuum evaporation, sputter coating, ion plating or physical vapor deposition.
3. The method for manufacturing the passive flexible temperature sensor based on the micromachining process as claimed in claim 1, wherein the etching method in step (1) is laser direct writing, the flexible coil and the micro-electrode are left after laser etching, and the rest of the metal layer is removed by laser.
4. The method for manufacturing the passive flexible temperature sensor based on the micro-machining process as claimed in claim 1, wherein the etching method in the step (1) is a method combining laser direct writing and photoetching.
5. The method of claim 4, wherein the photoresist is a positive photoresist during photolithography, the positive photoresist is spin-coated on the surface of the metal layer and then is exposed, the photoresist is placed under a mask plate with a flexible coil and a micro electrode pattern during the exposure, the pattern of the mask plate is opaque and the non-pattern is transparent, the photoresist is developed with a photolithography developer after the exposure, the laser directly writes off the portion without the photoresist after the development, and finally the photoresist is removed with acetone to obtain the flexible substrate for one-time processing.
6. The method as claimed in claim 4, wherein the photoresist is a negative photoresist during photolithography, the negative photoresist is spin-coated on the surface of the metal layer and then is exposed, the substrate is placed under a mask plate with a flexible coil and a micro electrode pattern during photolithography exposure, the pattern of the mask plate is transparent, and the non-pattern is opaque, the substrate is developed with a photolithography developer after photolithography exposure, the developed laser directly writes off the portion without the photoresist, and finally the photoresist is removed with acetone to obtain the flexible substrate for one-time processing.
7. The method for manufacturing the passive flexible temperature sensor based on the micromachining process of claim 1, wherein the flexible substrate is made of polyethylene terephthalate, polyimide, polydimethylsiloxane, polymethyl methacrylate, polyethylene naphthalate or polyvinyl chloride.
8. The method of claim 1, wherein the liquid flexible material is polydimethylsiloxane.
9. The method for manufacturing the passive flexible temperature sensor based on the micro-machining process as claimed in claim 1, wherein the coating method in the step (4) is brushing, scraping or spin coating.
10. The manufacturing method of the passive flexible temperature sensor based on the micro-machining process as claimed in claim 1, wherein the thickness of the metal layer is 30 nm-100 μm, and the width of the flexible coil is 5-20 μm.
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113503914A (en) * | 2021-06-29 | 2021-10-15 | 西北工业大学 | Preparation method of flexible sensor |
CN115078467A (en) * | 2022-05-31 | 2022-09-20 | 西北工业大学 | Humidity sensitive material, flexible humidity sensor and preparation method |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101487972A (en) * | 2008-01-18 | 2009-07-22 | 北京京东方光电科技有限公司 | Mask plate with adjustable permeation rate, production method and mask method thereof |
US20120092027A1 (en) * | 2010-10-18 | 2012-04-19 | Avery Dennison Corporation | RFID Wetness Sensing Device |
CN108182465A (en) * | 2017-12-28 | 2018-06-19 | 华东师范大学 | A kind of preparation method of the paper substrates RFID flexible electronic labels with humidity sensor characteristic |
CN108491917A (en) * | 2018-03-01 | 2018-09-04 | 华东师范大学 | A kind of multifunction flexible electronic tag and production method |
CN109781282A (en) * | 2019-03-07 | 2019-05-21 | 南京大学 | The flexibility temperature sensor of wireless power |
CN110175499A (en) * | 2018-10-15 | 2019-08-27 | 华为技术有限公司 | Optical element and its monitoring system and method, active illuminating module, terminal |
-
2020
- 2020-01-02 CN CN202010002524.XA patent/CN111157132A/en active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101487972A (en) * | 2008-01-18 | 2009-07-22 | 北京京东方光电科技有限公司 | Mask plate with adjustable permeation rate, production method and mask method thereof |
US20120092027A1 (en) * | 2010-10-18 | 2012-04-19 | Avery Dennison Corporation | RFID Wetness Sensing Device |
CN108182465A (en) * | 2017-12-28 | 2018-06-19 | 华东师范大学 | A kind of preparation method of the paper substrates RFID flexible electronic labels with humidity sensor characteristic |
CN108491917A (en) * | 2018-03-01 | 2018-09-04 | 华东师范大学 | A kind of multifunction flexible electronic tag and production method |
CN110175499A (en) * | 2018-10-15 | 2019-08-27 | 华为技术有限公司 | Optical element and its monitoring system and method, active illuminating module, terminal |
CN109781282A (en) * | 2019-03-07 | 2019-05-21 | 南京大学 | The flexibility temperature sensor of wireless power |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113503914A (en) * | 2021-06-29 | 2021-10-15 | 西北工业大学 | Preparation method of flexible sensor |
CN113503914B (en) * | 2021-06-29 | 2023-11-17 | 西北工业大学 | Preparation method of flexible sensor |
CN115078467A (en) * | 2022-05-31 | 2022-09-20 | 西北工业大学 | Humidity sensitive material, flexible humidity sensor and preparation method |
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