CN101484982A - Cmp用研磨液 - Google Patents
Cmp用研磨液 Download PDFInfo
- Publication number
- CN101484982A CN101484982A CNA2007800248452A CN200780024845A CN101484982A CN 101484982 A CN101484982 A CN 101484982A CN A2007800248452 A CNA2007800248452 A CN A2007800248452A CN 200780024845 A CN200780024845 A CN 200780024845A CN 101484982 A CN101484982 A CN 101484982A
- Authority
- CN
- China
- Prior art keywords
- cmp
- lapping liquid
- metal
- grinding
- acid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000007788 liquid Substances 0.000 title claims abstract description 50
- 238000005498 polishing Methods 0.000 title abstract description 5
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 18
- 239000002253 acid Substances 0.000 claims abstract description 14
- 229920001577 copolymer Polymers 0.000 claims abstract description 11
- 150000007513 acids Chemical class 0.000 claims abstract description 7
- 229910052751 metal Inorganic materials 0.000 claims description 59
- 239000002184 metal Substances 0.000 claims description 59
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 28
- 239000002245 particle Substances 0.000 claims description 26
- 150000001732 carboxylic acid derivatives Chemical class 0.000 claims description 15
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 14
- 239000007800 oxidant agent Substances 0.000 claims description 11
- 230000001590 oxidative effect Effects 0.000 claims description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 10
- 239000000377 silicon dioxide Substances 0.000 claims description 9
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 8
- 239000003112 inhibitor Substances 0.000 claims description 8
- 239000003960 organic solvent Substances 0.000 claims description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 4
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims description 4
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims description 4
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 claims description 4
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 claims description 4
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 4
- 239000003607 modifier Substances 0.000 claims description 3
- 239000000126 substance Substances 0.000 abstract description 3
- 239000006061 abrasive grain Substances 0.000 abstract 1
- 150000001735 carboxylic acids Chemical class 0.000 abstract 1
- 239000010408 film Substances 0.000 description 39
- 238000000227 grinding Methods 0.000 description 37
- 238000009826 distribution Methods 0.000 description 27
- 229910052802 copper Inorganic materials 0.000 description 22
- 239000010949 copper Substances 0.000 description 22
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 21
- 239000010410 layer Substances 0.000 description 20
- 238000009413 insulation Methods 0.000 description 14
- 239000011229 interlayer Substances 0.000 description 14
- 239000000758 substrate Substances 0.000 description 14
- 229910000881 Cu alloy Inorganic materials 0.000 description 13
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 12
- 239000000203 mixture Substances 0.000 description 12
- -1 tantalum Chemical class 0.000 description 12
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 11
- 238000000034 method Methods 0.000 description 10
- 230000004888 barrier function Effects 0.000 description 8
- 239000004020 conductor Substances 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 8
- 239000011159 matrix material Substances 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 235000012239 silicon dioxide Nutrition 0.000 description 7
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 6
- CZPWVGJYEJSRLH-UHFFFAOYSA-N Pyrimidine Chemical compound C1=CN=CN=C1 CZPWVGJYEJSRLH-UHFFFAOYSA-N 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 239000011521 glass Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- POLCUAVZOMRGSN-UHFFFAOYSA-N dipropyl ether Chemical compound CCCOCCC POLCUAVZOMRGSN-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 239000004744 fabric Substances 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- SNTWKPAKVQFCCF-UHFFFAOYSA-N 2,3-dihydro-1h-triazole Chemical compound N1NC=CN1 SNTWKPAKVQFCCF-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- 229920002125 Sokalan® Polymers 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000003153 chemical reaction reagent Substances 0.000 description 3
- 239000004584 polyacrylic acid Substances 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 239000004576 sand Substances 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical group [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- YXIWHUQXZSMYRE-UHFFFAOYSA-N 1,3-benzothiazole-2-thiol Chemical compound C1=CC=C2SC(S)=NC2=C1 YXIWHUQXZSMYRE-UHFFFAOYSA-N 0.000 description 2
- VZCYOOQTPOCHFL-OWOJBTEDSA-N Fumaric acid Chemical compound OC(=O)\C=C\C(O)=O VZCYOOQTPOCHFL-OWOJBTEDSA-N 0.000 description 2
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 2
- 239000004793 Polystyrene Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910001362 Ta alloys Inorganic materials 0.000 description 2
- 229910001080 W alloy Inorganic materials 0.000 description 2
- 230000006978 adaptation Effects 0.000 description 2
- WNLRTRBMVRJNCN-UHFFFAOYSA-N adipic acid Chemical compound OC(=O)CCCCC(O)=O WNLRTRBMVRJNCN-UHFFFAOYSA-N 0.000 description 2
- 150000001298 alcohols Chemical class 0.000 description 2
- 125000003118 aryl group Chemical group 0.000 description 2
- 230000033228 biological regulation Effects 0.000 description 2
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 2
- 235000015165 citric acid Nutrition 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 150000002148 esters Chemical class 0.000 description 2
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- 150000007522 mineralic acids Chemical class 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 229920000620 organic polymer Polymers 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229920002223 polystyrene Polymers 0.000 description 2
- 239000011164 primary particle Substances 0.000 description 2
- YGSDEFSMJLZEOE-UHFFFAOYSA-N salicylic acid Chemical compound OC(=O)C1=CC=CC=C1O YGSDEFSMJLZEOE-UHFFFAOYSA-N 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- 239000005368 silicate glass Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 150000003482 tantalum compounds Chemical class 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 description 1
- QWENRTYMTSOGBR-UHFFFAOYSA-N 1H-1,2,3-Triazole Chemical compound C=1C=NNN=1 QWENRTYMTSOGBR-UHFFFAOYSA-N 0.000 description 1
- AXINVSXSGNSVLV-UHFFFAOYSA-N 1h-pyrazol-4-amine Chemical compound NC=1C=NNC=1 AXINVSXSGNSVLV-UHFFFAOYSA-N 0.000 description 1
- SYOANZBNGDEJFH-UHFFFAOYSA-N 2,5-dihydro-1h-triazole Chemical compound C1NNN=C1 SYOANZBNGDEJFH-UHFFFAOYSA-N 0.000 description 1
- JAHNSTQSQJOJLO-UHFFFAOYSA-N 2-(3-fluorophenyl)-1h-imidazole Chemical compound FC1=CC=CC(C=2NC=CN=2)=C1 JAHNSTQSQJOJLO-UHFFFAOYSA-N 0.000 description 1
- RWLALWYNXFYRGW-UHFFFAOYSA-N 2-Ethyl-1,3-hexanediol Chemical compound CCCC(O)C(CC)CO RWLALWYNXFYRGW-UHFFFAOYSA-N 0.000 description 1
- JMTMSDXUXJISAY-UHFFFAOYSA-N 2H-benzotriazol-4-ol Chemical compound OC1=CC=CC2=C1N=NN2 JMTMSDXUXJISAY-UHFFFAOYSA-N 0.000 description 1
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- NSPMIYGKQJPBQR-UHFFFAOYSA-N 4H-1,2,4-triazole Chemical compound C=1N=CNN=1 NSPMIYGKQJPBQR-UHFFFAOYSA-N 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 description 1
- 229920000219 Ethylene vinyl alcohol Polymers 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 239000004471 Glycine Substances 0.000 description 1
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 108010020346 Polyglutamic Acid Proteins 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 1
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 235000011054 acetic acid Nutrition 0.000 description 1
- 150000001243 acetic acids Chemical class 0.000 description 1
- 229920006322 acrylamide copolymer Polymers 0.000 description 1
- 239000001361 adipic acid Substances 0.000 description 1
- 235000011037 adipic acid Nutrition 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 description 1
- 125000003368 amide group Chemical group 0.000 description 1
- 150000003863 ammonium salts Chemical class 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 235000019994 cava Nutrition 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- JJQZDUKDJDQPMQ-UHFFFAOYSA-N dimethoxy(dimethyl)silane Chemical compound CO[Si](C)(C)OC JJQZDUKDJDQPMQ-UHFFFAOYSA-N 0.000 description 1
- 150000002009 diols Chemical class 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005518 electrochemistry Effects 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- 229940116333 ethyl lactate Drugs 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 229940104869 fluorosilicate Drugs 0.000 description 1
- 238000005187 foaming Methods 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- 239000001530 fumaric acid Substances 0.000 description 1
- 238000005227 gel permeation chromatography Methods 0.000 description 1
- 150000002334 glycols Chemical class 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- NPZTUJOABDZTLV-UHFFFAOYSA-N hydroxybenzotriazole Substances O=C1C=CC=C2NNN=C12 NPZTUJOABDZTLV-UHFFFAOYSA-N 0.000 description 1
- QWPPOHNGKGFGJK-UHFFFAOYSA-N hypochlorous acid Chemical compound ClO QWPPOHNGKGFGJK-UHFFFAOYSA-N 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 150000002596 lactones Chemical class 0.000 description 1
- 239000001630 malic acid Substances 0.000 description 1
- 235000011090 malic acid Nutrition 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- UKKHWKNEQBGLMI-UHFFFAOYSA-N n-pyrimidin-2-ylacetamide Chemical compound CC(=O)NC1=NC=CC=N1 UKKHWKNEQBGLMI-UHFFFAOYSA-N 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 239000012788 optical film Substances 0.000 description 1
- 239000005304 optical glass Substances 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- FJKROLUGYXJWQN-UHFFFAOYSA-N papa-hydroxy-benzoic acid Natural products OC(=O)C1=CC=C(O)C=C1 FJKROLUGYXJWQN-UHFFFAOYSA-N 0.000 description 1
- 150000003009 phosphonic acids Chemical class 0.000 description 1
- 229920003209 poly(hydridosilsesquioxane) Polymers 0.000 description 1
- 108010064470 polyaspartate Proteins 0.000 description 1
- 229920002643 polyglutamic acid Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920005749 polyurethane resin Polymers 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- FJVZDOGVDJCCCR-UHFFFAOYSA-M potassium periodate Chemical compound [K+].[O-]I(=O)(=O)=O FJVZDOGVDJCCCR-UHFFFAOYSA-M 0.000 description 1
- LJXQPZWIHJMPQQ-UHFFFAOYSA-N pyrimidin-2-amine Chemical compound NC1=NC=CC=N1 LJXQPZWIHJMPQQ-UHFFFAOYSA-N 0.000 description 1
- MQEFDQWUCTUJCP-UHFFFAOYSA-N pyrimidine-2,4,5,6-tetramine;sulfuric acid Chemical compound OS(O)(=O)=O.NC1=NC(N)=C(N)C(N)=N1 MQEFDQWUCTUJCP-UHFFFAOYSA-N 0.000 description 1
- 125000000714 pyrimidinyl group Chemical group 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 150000003304 ruthenium compounds Chemical class 0.000 description 1
- 229960004889 salicylic acid Drugs 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- DCKVNWZUADLDEH-UHFFFAOYSA-N sec-butyl acetate Chemical compound CCC(C)OC(C)=O DCKVNWZUADLDEH-UHFFFAOYSA-N 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- HXJUTPCZVOIRIF-UHFFFAOYSA-N sulfolane Chemical compound O=S1(=O)CCCC1 HXJUTPCZVOIRIF-UHFFFAOYSA-N 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 150000003609 titanium compounds Chemical class 0.000 description 1
- YXFVVABEGXRONW-UHFFFAOYSA-N toluene Substances CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 1
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 1
- PQDJYEQOELDLCP-UHFFFAOYSA-N trimethylsilane Chemical compound C[SiH](C)C PQDJYEQOELDLCP-UHFFFAOYSA-N 0.000 description 1
- 229940094989 trimethylsilane Drugs 0.000 description 1
- 150000003658 tungsten compounds Chemical class 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F3/00—Brightening metals by chemical means
- C23F3/04—Heavy metals
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F3/00—Brightening metals by chemical means
- C23F3/04—Heavy metals
- C23F3/06—Heavy metals with acidic solutions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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Abstract
本发明涉及包含磨粒、和锯齿及裂缝抑制剂的CMP用研磨液,锯齿及裂缝抑制剂是选自聚羧酸、聚羧酸衍生物和含有羧酸的共聚物中的至少一种。根据本发明可以提供抑制配线部附近的绝缘膜被过度研磨的锯齿现象、裂缝现象,并且被研磨面的平坦性高的CMP用研磨液。
Description
技术领域
本发明涉及在半导体装置的配线形成工序等中研磨所使用的CMP用研磨液。
背景技术
近年,随着半导体集成电路(以下记为LSI)的高集成化、高性能化,开发出新的微细加工技术。化学机械研磨(以下记为CMP)法也是微细加工技术之一,其为在LSI制造工序特别是多层配线形成工序中的层间绝缘膜的平坦化、金属插塞形成、埋入式配线形成中被频繁利用的技术。该技术公开于例如美国第4944836号专利中。
另外,最近,为了使LSI高性能化,尝试利用铜和铜合金作为构成配线材料的导电性物质。但是,铜或铜合金很难通过以往的铝合金配线形成中频繁使用的干式蚀刻法进行微细加工。因此,主要采用在预先形成有沟槽的绝缘膜上沉积并埋入铜合金的薄膜,通过CMP除去沟槽部以外的所述薄膜,从而形成埋入式配线的所谓镶嵌(damascene)法。该技术公开于例如日本特开平2-278822号公报。
研磨铜或铜合金等配线部用金属的金属CMP的通常方法为,将研磨布(研磨垫)贴附在圆形的研磨盘(压磨板)上,一边用金属用研磨液浸渍研磨布表面,一边将基板的形成有金属膜的面按压在研磨布的表面,在从研磨布的背面向金属膜施加规定的压力(以下记为研磨压力)的状态下,旋转研磨盘,通过研磨液和金属膜的凸部的相对机械摩擦,除去凸部的金属膜。
CMP所使用的金属用研磨液通常包含氧化剂和磨粒,根据需要还可以进一步添加氧化金属溶解剂、保护膜形成剂。认为基本的机理是,首先通过氧化剂将金属膜表面氧化,通过磨粒磨削该氧化层。因为凹部的金属表面的氧化层几乎不与研磨垫接触,没有磨粒产生的磨削效果,所以随着CMP的进行,凸部的金属层被除去,基板表面被平坦化。关于详细情况,公开在Journal ofElectronchemical Society(电化学会志期刊)的第138卷11号(1991年发行)的3460~3464页。
作为提高CMP的研磨速度的方法,添加氧化金属溶解剂是有效的。这被解释为,由于使被磨粒磨削的金属氧化物的颗粒溶解在研磨液中(以下记为蚀刻),磨粒的磨削效果增强。通过氧化金属溶解剂的添加,CMP的研磨速度提高,另一方面,如果凹部的金属膜表面的氧化层也被蚀刻而露出金属膜表面,则金属膜表面由于氧化剂而被进一步氧化,如此反复的话,则会进行凹部的金属膜的蚀刻。因此,研磨后会产生被埋入的金属配线的表面中央部分碟形洼陷的现象(以下记为碟陷),平坦化效果会受到损害。
为了防止这种情况,进一步添加保护膜形成剂。保护膜形成剂是在金属膜表面的氧化层上形成保护膜,防止氧化层向研磨液中溶解的物质。希望该保护膜能够很容易被磨粒磨削,不使CMP的研磨速度降低。为了抑制铜或铜合金的碟陷或研磨中的腐蚀,形成可靠性高的LSI配线,提倡使用含有包含甘氨酸等氨基乙酸或酰胺基硫酸的氧化金属溶解剂和作为保护膜形成剂的BTA的CMP用研磨液的方法。该技术记载于例如日本特开平8-83780号公报中。
在铜或铜合金等镶嵌配线形成或钨等插塞配线形成等金属埋入式形成中,作为在埋入部分以外形成的层间绝缘膜的二氧化硅膜的研磨速度也很大的情况下,会发生层间绝缘膜和配线一起厚度变薄的薄化(thinning)现象。结果,由于发生配线电阻的增加,因此,需要二氧化硅膜相对于被研磨的金属膜的研磨速度充分小的特性。因此,为了通过酸解离产生的阴离子抑制二氧化硅的研磨速度,提倡使研磨液的pH值大于pKa-0.5的方法。该技术记载于例如日本专利第2819196号公报中。
另一方面,在铜或铜合金等配线部用金属的下层形成有例如钽、钽合金、氮化钽等钽化合物等的层,作为用于防止铜向层间绝缘膜中扩散和提高密合性的阻挡导体层(以下也称作阻挡层)。所以,除了埋入铜或铜合金的配线部以外,需要通过CMP除去露出的阻挡层。但是,由于这些阻挡层的导体比铜或铜合金的硬度高,因此,即使组合铜或铜合金用的研磨材料,也不能获得充分的研磨速度,并且经常有平坦性变差的情况。因此,研究包含研磨配线部用金属的第1工序和研磨阻挡层的第2工序的2段研磨方法。
发明内容
上述2段研磨方法中,在研磨阻挡层的第2工序中,为了平坦化,有时需要研磨层间绝缘膜。层间绝缘膜,可以举出例如作为二氧化硅或Low-k(低介电常数)膜的有机硅酸盐玻璃、全芳香环系Low-k膜。这时,通过CMP研磨液组成,将这些层间绝缘膜研磨规定量后,会有铜或铜合金等配线部附近的层间绝缘膜不平坦、从配线部表面凹陷的问题(锯齿、裂缝)。
这里,所谓锯齿,是指配线金属部宽度比绝缘膜部宽度宽(例如配线金属部宽9μm、绝缘膜部宽1μm)或者配线金属部宽度、绝缘膜部宽度都窄(例如配线金属部宽0.25μm、绝缘膜部宽0.25μm)的条纹状图形部中,条纹状图形排列的最外侧的配线金属部附近的层间绝缘膜凹陷量。另外,所谓裂缝,是指配线金属部宽度、绝缘膜部宽度都宽(例如配线金属部宽100μm、绝缘膜部宽100μm)的条纹状图形部的配线金属部附近的层间绝缘膜凹陷量。
本发明鉴于上述问题,提供抑制配线部附近的绝缘膜被过度研磨的现象(锯齿、裂缝)、被研磨面的平坦性高的CMP用研磨液。
本发明涉及以下内容。
(1)一种CMP用研磨液,其包含磨粒和锯齿(fang)及裂缝(seam)抑制剂,锯齿及裂缝抑制剂是选自聚羧酸、聚羧酸衍生物和含有羧酸的共聚物中的至少一种。
(2)根据上述(1)记载的CMP用研磨液,其用于研磨金属膜和绝缘膜的用途。
(3)根据上述(1)或(2)记载的CMP用研磨液,其中,磨粒为选自氧化硅、氧化铝、二氧化铈、氧化钛、氧化锆、氧化锗和它们的改性物中的至少1种。
(4)根据上述(1)~(3)中任一项记载的CMP用研磨液,其含有有机溶剂、氧化金属溶解剂和水。
(5)根据上述(1)~(4)中任一项记载的CMP用研磨液,其中进一步包含金属的氧化剂。
(6)根据上述(1)~(5)中任一项记载的CMP用研磨液,其中进一步包含金属的防腐蚀剂。
本发明公开的内容与2006年7月4日申请的日本特愿2006-184330号记载的主题相关,其公开的内容援用于此。
具体实施方式
本发明的CMP用研磨液的特征是,CMP研磨液中包含选自聚羧酸、聚羧酸衍生物和含有羧酸的共聚物中的至少一种锯齿及裂缝抑制剂。并且,该CMP用研磨液是含有磨粒的研磨液,优选通常含有有机溶剂、氧化金属溶解剂和水,更优选含有金属的氧化剂、金属的防腐蚀剂。
作为本发明的研磨液中的锯齿及裂缝抑制剂,是选自聚羧酸、聚羧酸衍生物和含有羧酸的共聚物的至少一种。作为聚羧酸、聚羧酸衍生物,可以举出聚丙烯酸、聚甲基丙烯酸、聚天冬氨酸、聚谷氨酸、聚苹果酸、聚马来酸、聚衣康酸、聚富马酸或这些聚羧酸的盐、酯等。作为含有羧酸的共聚物,可以举出羧酸彼此的共聚物、羧酸衍生物彼此的共聚物、羧酸和羧酸衍生物的共聚物、羧酸-乙烯醇共聚物、羧酸-磺酸共聚物、羧酸-丙烯酰胺共聚物、它们的盐、酯等。含有羧酸的共聚物中,优选羧酸成分为5~100摩尔%。这些物质可以单独使用1种,也可以混合使用2种以上。这些之中,优选聚丙烯酸。
锯齿、裂缝抑制剂的重均分子量优选为500以上,更优选为1500以上,特别优选为5000以上。重均分子量的上限没有特别限定,从溶解性的观点考虑,优选为500万以下。重均分子量可以通过凝胶渗透色谱用聚苯乙烯的标准曲线测定。
锯齿、裂缝抑制剂的配合量,相对于全部成分100g,优选为0.001~10g,更优选为0.005~5g。如果该配合量过多,则会有阻挡导体层的研磨速度降低的倾向,如果过少,则会有锯齿、裂缝的抑制效果降低的倾向。
作为本发明的CMP用研磨液中的有机溶剂,没有特别限制,优选为可以与水任意混合的溶剂。例如有机溶剂可举出,二醇类、二醇单醚类、二醇二醚类、醇类、碳酸酯类、内酯类、醚类、酮类、除此以外还有酚、二甲基甲酰胺、N-甲基吡咯烷酮、醋酸乙酯、乳酸乙酯、环丁砜等。优选从二醇单醚类、醇类、碳酸酯类中选出的至少1种。例如,优选丙二醇单丙基醚、2-乙基-1,3-己二醇等。
有机溶剂的配合量,相对于全部成分的总量100g,优选为0.1~95g,更优选为0.2~50g,特别优选为0.5~10g。如果配合量小于0.1g,则研磨液对基板的润湿性低,如果超过95g,则由于可能起火而在制造工艺上不优选。
本发明的氧化金属溶解剂,没有特别限制,可以举出有机酸、有机酸酯、有机酸的铵盐、无机酸、无机酸的铵盐类。这些之中,对于以金属为主成分的导电性物质来说,从维持实用的CMP速度的同时可以有效抑制蚀刻速度的观点考虑,甲酸、丙二酸、苹果酸、酒石酸、柠檬酸、水杨酸、己二酸是适宜的,或者从高CMP速度的观点考虑,硫酸是适宜的。它们可以单独使用1种,也可以将2种以上混合使用。
氧化金属溶解剂的配合量,相对于全部成分的总量100g,优选为0.001~20g,更优选为0.002~10g,特别优选为0.005~5g。如果配合量小于0.001g,则研磨速度低,如果超过20g,则会有难以抑制蚀刻,研磨面产生粗糙不平的倾向。这里,所述成分中,水的配合量为余量即可,只要含有即可,没有特别限制。
作为本发明的磨粒,没有特别限制,可以举出二氧化硅、胶体二氧化硅、氧化铝、氧化锆、二氧化铈、氧化钛、氧化锗、碳化硅等无机物磨粒,聚苯乙烯、聚丙烯酸、聚氯乙烯等有机物磨粒或这些磨粒的改性物。优选二氧化硅、氧化铝、氧化锆、二氧化铈、氧化钛、氧化锗,特别优选研磨液中的分散稳定性好、通过CMP产生的研磨损伤(刮痕)的发生数少的平均粒径为200nm以下的胶体二氧化硅、胶体氧化铝,更优选平均粒径为100nm以下的胶体二氧化硅、胶体氧化铝。另外,优选一次粒子仅以平均不足2粒子凝集的粒子,特别优选一次粒子仅以平均不足1.2粒子凝集的粒子。进而,平均粒度分布的标准偏差优选为10nm以下,平均粒度分布的标准偏差更优选为5nm以下。这些可以单独使用1种,也可以将2种以上混合使用。
磨粒的配合量,相对于全部成分的总量100g,优选为0.01~50g,更优选为0.02~30g,特别优选为0.05~20g。如果配合量小于0.01g,则研磨速度低,如果超过50g,则会有产生很多研磨损伤的倾向。
本发明的CMP用研磨液中也可以添加金属的氧化剂。作为金属的氧化剂,可以举出过氧化氢(H2O2)、硝酸、高碘酸钾、次氯酸、臭氧水等,其中特别优选过氧化氢。这些可以单独使用1种,也可以将2种以上混合使用。基板为包含集成电路用元件的硅基板时,由于不希望有碱金属、碱土金属、卤化物等引起的污染,所以优选是不含不挥发成分的氧化剂。其中,臭氧水其组成随着时间激烈变化,所以过氧化氢是最合适的。这里,应用对象的基板是不含半导体元件的玻璃基板等时,即使是含有不挥发成分的氧化剂也没有关系。
氧化剂的配合量,相对于全部成分的总量100g,优选为0.01~50g,更优选为0.02~30g,特别优选为0.05~15g。如果配合量小于0.01g,则金属的氧化不充分,CMP速度低;如果超过50g,则会有研磨面产生粗糙不平的倾向。
另外,本发明的CMP用研磨液也可以添加金属防腐蚀剂。作为金属防腐蚀剂,可以举出例如,2-巯基苯并噻唑、1,2,3-三唑、1,2,4-三唑、3-氨基-1H-1,2,4-三唑、苯并三唑、1-羟基苯并三唑、1-二羟基丙基苯并三唑、2,3-二羧基丙基苯并三唑、4-羟基苯并三唑、4-羧基(-1H-)苯并三唑、4-羧基(-1H-)苯并三唑甲基酯、4-羧基(-1H-)苯并三唑丁基酯、4-羧基(-1H-)苯并三唑辛基酯、5-己基苯并三唑、(1,2,3-苯并三唑基-1-甲基)(1,2,4-三唑基-1-甲基)(2-乙基己基)胺、甲苯并三唑、萘并三唑、双[(1-苯并三唑基)甲基]膦酸等。
另外,可以举出具有嘧啶骨架的嘧啶、1,2,4-三唑并[1,5-a]嘧啶、1,3,4,6,7,8-六氢-2H-嘧啶并[1,2-a]嘧啶、1,3-二苯基-嘧啶-2,4,6-三酮、1,4,5,6-四氢嘧啶、2,4,5,6-四氨基嘧啶硫酸盐、2,4,5-三羟基嘧啶、2,4,6-三氨基嘧啶、2,4,6-三氯嘧啶、2,4,6-三甲氧基嘧啶、2,4,6-三苯基嘧啶、2,4-二氨基-6-羟基嘧啶、2,4-二氨基嘧啶、2-乙酰胺基嘧啶、2-氨基嘧啶、2-甲基-5,7-二苯基-(1,2,4)三唑并(1,5-a)嘧啶、2-甲基对氨基苯磺酰基-5,7-二苯基-(1,2,4)三唑并(1,5-a)嘧啶、2-甲基对氨基苯磺酰基-5,7-二苯基-4,7-二氢-(1,2,4)三唑并(1,5-a)嘧啶、4-氨基吡唑并[3,4,-d]嘧啶等。这些可以单独使用1种,或者将2种以上混合使用。
金属防腐蚀剂的配合量,相对于全部成分的总量100g,优选为0~10g,更优选为0.001~5g,特别优选为0.002~2g。如果该配合量超过10g,则会有研磨速度变低的倾向。
本发明的CMP用研磨液,优选用于研磨金属膜和绝缘膜的用途。作为金属膜中的导电性物质,可以举出以铜、铜合金、铜的氧化物或铜合金的氧化物、钨、钨合金、银、金等金属为主成分的物质。
阻挡层是为了防止导电性物质向绝缘膜中扩散以及提高绝缘膜和导电性物质的密合性而形成的,可以举出从钨、氮化钨、钨合金、其他的钨化合物、钛、氮化钛、钛合金、其他的钛化合物、钽、氮化钽、钽合金、其他的钽化合物、钌以及其他的钌化合物中选出的至少1种的阻挡层、以及包含该阻挡层的层叠膜。
作为绝缘膜,可以举出硅系被膜、有机聚合物膜。作为硅系被膜,可以举出以二氧化硅、氟硅酸盐玻璃、三甲基硅烷、二甲氧基二甲基硅烷为起始原料得到的有机硅酸盐玻璃、硅氧氮化物、氢化倍半硅氧烷等硅系被膜、碳化硅和氮化硅。另外,作为有机聚合物膜,可以举出全芳香族系低介电常数层间绝缘膜。
本发明的CMP研磨液,不仅可以用于研磨如上所述的形成于半导体基板的金属膜和硅化合物膜,还可以用于同时或分别研磨金属膜和绝缘膜的用途。例如,还可以用于研磨在具有规定的配线的配线板上形成的氧化硅膜,玻璃、氮化硅等无机绝缘膜,光掩模·透镜·棱镜等光学玻璃,ITO等无机导电膜,由玻璃和结晶质材料构成的光集成电路·光开关元件·光波导,光纤的端面、闪烁器等光学用单晶,固体激光单晶,蓝色激光用LED蓝宝石基板,SiC、GaP、GaAs等半导体单晶,磁盘用玻璃基板,磁头等的基板。
实施例
以下,通过实施例说明本发明。本发明不限于这些实施例。
准备硅基板,该硅基板是通过公知的CMP法,用公知的铜CMP用研磨液对作为带有铜配线的基体的ATDF制854CMP图形(层间绝缘膜厚500nm)的沟槽部以外的铜膜进行研磨(第1研磨工序)得到的硅基板。
<研磨条件>
研磨装置:单面CMP用研磨机(应用材料公司制造,产品名MIRRA)
研磨垫:绒面革状(suede)发泡聚氨酯树脂
盘转速:93次/分钟
机头转速:87次/分钟
研磨压力:2psi(约14kPa)
研磨液的供给量:200毫升/分钟
<配线附近层间绝缘膜凹陷量(裂缝、锯齿)的评价方法>
裂缝:使用下述实施例1、2、比较例1的(1)记载的研磨液,对上述带铜配线的基体进行研磨(第2研磨工序)。研磨后,使用触针式段差计测定配线金属部宽100μm、绝缘膜部宽100μm交替排列成的条纹状图形部的表面形状,评价配线金属部附近的层间绝缘膜凹陷量(裂缝)。
锯齿:对于上述的第2研磨工序后的带铜配线的基体,使用触针式段差计测定配线金属部宽9μm、绝缘膜部宽1μm交替排列成的条纹状图形部的表面形状,评价条纹状图形排列的最外侧的配线金属部附近的层间绝缘膜凹陷量(锯齿)。
<绝缘膜部膜厚的评价方法>
用光学膜厚仪,求出上述第2研磨工序后的带铜配线基体的配线金属部宽100μm、绝缘膜部宽100μm交替排列的条纹状图形部的绝缘膜部的中心膜厚。研磨前的膜厚为500nm。
实施例1
(1)CMP用研磨液的制备
取平均粒径60nm的胶体二氧化硅6.0质量份、苯并三唑0.1质量份、丙二酸0.2质量份、丙二醇单丙基醚5.0质量份、聚丙烯酸(重均分子量50,000)0.06质量份、纯水88.64质量份,充分搅拌混合。接着,将该混合液和过氧化氢(试剂特级,30%水溶液)以99.0:1.0的质量比例混合,制成研磨液。
(2)研磨结果
使用上述(1)记载的研磨液,研磨带铜配线的基体70秒。裂缝为5nm,锯齿为5nm、层间绝缘膜部膜厚为450nm。
实施例2
(1)CMP用研磨液的制备
取平均粒径40nm的胶体二氧化硅6.0质量份、1,2,4-三唑0.1质量份、柠檬酸0.2质量份、丙二醇单丙基醚5.0质量份、聚甲基丙烯酸(重均分子量10,000)0.02质量份、纯水88.68质量份,充分搅拌混合。接着,将该混合液和过氧化氢(试剂特级,30%水溶液)以99.0:1.0的质量比例混合,制成研磨液。
(2)研磨结果
使用上述(1)记载的研磨液,研磨带铜配线的基体70秒。裂缝为10nm,锯齿为5nm、层间绝缘膜部膜厚为455nm。
比较例1
(1)CMP用研磨液的制备
取平均粒径60nm的胶体二氧化硅6.0质量份、苯并三唑0.1质量份、丙二酸0.2质量份、丙二醇单丙基醚5.0质量份、纯水88.7质量份,充分搅拌混合。接着,将该混合液和过氧化氢(试剂特级,30%水溶液)以99.0:1.0的质量比例混合,制成研磨液。
(2)研磨结果
使用上述(1)记载的研磨液,研磨带铜配线的基体70秒。裂缝为40nm,锯齿为20nm、层间绝缘膜部膜厚为450nm。
由上述可知,利用本发明的CMP用研磨液,能够得到平坦性高的被研磨面。
工业上的可利用性
能够提供抑制配线部附近的绝缘膜被过度研磨的现象(锯齿、裂缝)的被研磨面的平坦性高的CMP用研磨液。
Claims (6)
1.一种CMP用研磨液,其特征在于,其包含磨粒和锯齿及裂缝抑制剂,锯齿及裂缝抑制剂是选自聚羧酸、聚羧酸衍生物和含有羧酸的共聚物中的至少一种。
2.根据权利要求1记载的CMP用研磨液,其用于研磨金属膜和绝缘膜的用途。
3.根据权利要求1或2记载的CMP用研磨液,其中,磨粒为选自氧化硅、氧化铝、二氧化铈、氧化钛、氧化锆、氧化锗和它们的改性物中的至少1种。
4.根据权利要求1~3中任一项记载的CMP用研磨液,其含有有机溶剂、氧化金属溶解剂和水。
5.根据权利要求1~4中任一项记载的CMP用研磨液,其中进一步包含金属的氧化剂。
6.根据权利要求1~5中任一项记载的CMP用研磨液,其中进一步包含金属的防腐蚀剂。
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CN102485423A (zh) * | 2010-12-01 | 2012-06-06 | 财团法人金属工业研究发展中心 | 研磨抛光装置及其研磨抛光方法 |
CN112778970A (zh) * | 2021-01-04 | 2021-05-11 | 上海晖研材料科技有限公司 | 一种制备表面改性的氧化铈颗粒及含其的抛光液的方法 |
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JP5407188B2 (ja) * | 2008-06-11 | 2014-02-05 | 信越化学工業株式会社 | 合成石英ガラス基板用研磨剤 |
WO2009150938A1 (ja) * | 2008-06-11 | 2009-12-17 | 信越化学工業株式会社 | 合成石英ガラス基板用研磨剤 |
JP5369506B2 (ja) * | 2008-06-11 | 2013-12-18 | 信越化学工業株式会社 | 合成石英ガラス基板用研磨剤 |
TWI629347B (zh) * | 2012-07-17 | 2018-07-11 | 福吉米股份有限公司 | 使用合金材料硏磨用組成物來研磨合金材料的方法 |
TWI804925B (zh) * | 2020-07-20 | 2023-06-11 | 美商Cmc材料股份有限公司 | 矽晶圓拋光組合物及方法 |
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US4944836A (en) * | 1985-10-28 | 1990-07-31 | International Business Machines Corporation | Chem-mech polishing method for producing coplanar metal/insulator films on a substrate |
US5391258A (en) * | 1993-05-26 | 1995-02-21 | Rodel, Inc. | Compositions and methods for polishing |
US6592776B1 (en) * | 1997-07-28 | 2003-07-15 | Cabot Microelectronics Corporation | Polishing composition for metal CMP |
TWI281493B (en) * | 2000-10-06 | 2007-05-21 | Mitsui Mining & Smelting Co | Polishing material |
EP1505639B1 (en) * | 2002-04-30 | 2008-08-06 | Hitachi Chemical Company, Ltd. | Polishing fluid and polishing method |
JP2005286160A (ja) * | 2004-03-30 | 2005-10-13 | Hitachi Chem Co Ltd | Cmp研磨剤及び基板の研磨方法 |
JP2006100538A (ja) * | 2004-09-29 | 2006-04-13 | Fuji Photo Film Co Ltd | 研磨用組成物及びそれを用いた研磨方法 |
JP4845373B2 (ja) * | 2004-12-07 | 2011-12-28 | 日立化成工業株式会社 | 研磨液及び研磨方法 |
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CN102485423A (zh) * | 2010-12-01 | 2012-06-06 | 财团法人金属工业研究发展中心 | 研磨抛光装置及其研磨抛光方法 |
CN112778970A (zh) * | 2021-01-04 | 2021-05-11 | 上海晖研材料科技有限公司 | 一种制备表面改性的氧化铈颗粒及含其的抛光液的方法 |
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TW200813203A (en) | 2008-03-16 |
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KR20090018202A (ko) | 2009-02-19 |
TWI351431B (zh) | 2011-11-01 |
US20090283715A1 (en) | 2009-11-19 |
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