CN101484966B - 电子束蒸发装置 - Google Patents
电子束蒸发装置 Download PDFInfo
- Publication number
- CN101484966B CN101484966B CN2007800256069A CN200780025606A CN101484966B CN 101484966 B CN101484966 B CN 101484966B CN 2007800256069 A CN2007800256069 A CN 2007800256069A CN 200780025606 A CN200780025606 A CN 200780025606A CN 101484966 B CN101484966 B CN 101484966B
- Authority
- CN
- China
- Prior art keywords
- evaporation
- retaining
- distance
- electron beam
- evaporated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000005566 electron beam evaporation Methods 0.000 title claims abstract description 9
- 239000000463 material Substances 0.000 claims abstract description 133
- 238000010894 electron beam technology Methods 0.000 claims abstract description 47
- 238000001704 evaporation Methods 0.000 claims description 95
- 230000008020 evaporation Effects 0.000 claims description 86
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 17
- 239000010949 copper Substances 0.000 claims description 17
- 229910052802 copper Inorganic materials 0.000 claims description 17
- 239000002245 particle Substances 0.000 claims description 16
- 238000010438 heat treatment Methods 0.000 claims description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 5
- 230000005540 biological transmission Effects 0.000 claims description 5
- 229910002804 graphite Inorganic materials 0.000 claims description 5
- 239000010439 graphite Substances 0.000 claims description 5
- 238000012545 processing Methods 0.000 claims description 4
- 239000004411 aluminium Substances 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- 229910001220 stainless steel Inorganic materials 0.000 claims description 2
- 239000010935 stainless steel Substances 0.000 claims description 2
- 239000000758 substrate Substances 0.000 abstract description 14
- 238000007747 plating Methods 0.000 description 24
- 239000010410 layer Substances 0.000 description 18
- 238000000034 method Methods 0.000 description 13
- 230000007246 mechanism Effects 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 238000009826 distribution Methods 0.000 description 5
- 238000005240 physical vapour deposition Methods 0.000 description 5
- 230000005855 radiation Effects 0.000 description 5
- 238000007740 vapor deposition Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 238000009833 condensation Methods 0.000 description 3
- 230000005494 condensation Effects 0.000 description 3
- 238000004821 distillation Methods 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 238000009434 installation Methods 0.000 description 3
- 230000001133 acceleration Effects 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000010891 electric arc Methods 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 238000007667 floating Methods 0.000 description 2
- 230000004927 fusion Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- NFGXHKASABOEEW-UHFFFAOYSA-N 1-methylethyl 11-methoxy-3,7,11-trimethyl-2,4-dodecadienoate Chemical compound COC(C)(C)CCCC(C)CC=CC(C)=CC(=O)OC(C)C NFGXHKASABOEEW-UHFFFAOYSA-N 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 210000000988 bone and bone Anatomy 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000004508 fractional distillation Methods 0.000 description 1
- 239000003779 heat-resistant material Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 230000004807 localization Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000005373 pervaporation Methods 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
- H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/243—Crucibles for source material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/28—Vacuum evaporation by wave energy or particle radiation
- C23C14/30—Vacuum evaporation by wave energy or particle radiation by electron bombardment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/31—Processing objects on a macro-scale
- H01J2237/3132—Evaporating
- H01J2237/3137—Plasma-assisted co-operation
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Physics & Mathematics (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE200610031244 DE102006031244B4 (de) | 2006-07-06 | 2006-07-06 | Vorrichtung zum Verdampfen eines Materials mittels eines Elektronenstrahls und zum Abscheiden des Dampfes auf ein Substrat |
DE102006031244.9 | 2006-07-06 | ||
PCT/EP2007/005715 WO2008003425A1 (de) | 2006-07-06 | 2007-06-28 | Vorrichtung zum elektronenstrahlverdampfen |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101484966A CN101484966A (zh) | 2009-07-15 |
CN101484966B true CN101484966B (zh) | 2012-05-30 |
Family
ID=38421460
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2007800256069A Expired - Fee Related CN101484966B (zh) | 2006-07-06 | 2007-06-28 | 电子束蒸发装置 |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP2038912A1 (de) |
JP (1) | JP5150626B2 (de) |
CN (1) | CN101484966B (de) |
DE (1) | DE102006031244B4 (de) |
WO (1) | WO2008003425A1 (de) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102009014891B4 (de) | 2009-03-25 | 2012-12-27 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Vorrichtung zum Verdampfen eines Materials in einer Vakuumkammer |
CN102315148A (zh) * | 2010-06-30 | 2012-01-11 | 上方能源技术(杭州)有限公司 | 用于镀膜的基板传输装置和基板传输方法 |
KR20150114486A (ko) * | 2013-01-30 | 2015-10-12 | 프라운호퍼-게젤샤프트 추르 푀르데룽 데어 안제반텐 포르슝 에 파우 | 에피택셜 반도체층을 제조하기 위한 방법 |
WO2014144189A1 (en) | 2013-03-15 | 2014-09-18 | United Technologies Corporation | Deposition apparatus and methods |
CN103983381B (zh) * | 2014-05-30 | 2017-01-25 | 北京卫星环境工程研究所 | 真空条件下单颗粒粘附力和带电量的测试系统及测试方法 |
CN107620047A (zh) * | 2017-08-25 | 2018-01-23 | 苏州安江源光电科技有限公司 | 一种用于pvd镀膜的反应腔室以及加工方法 |
US11603589B2 (en) * | 2017-12-06 | 2023-03-14 | Arizona Thin Film Research, LLC | Systems and methods for additive manufacturing for the deposition of metal and ceramic materials |
DE102018131904A1 (de) * | 2018-12-12 | 2020-06-18 | VON ARDENNE Asset GmbH & Co. KG | Verdampfungsanordnung und Verfahren |
CN110117772B (zh) * | 2019-06-14 | 2024-03-15 | 费勉仪器科技(上海)有限公司 | 一种超稳定三电极电子束蒸发源 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3345059A (en) * | 1965-03-12 | 1967-10-03 | United States Steel Corp | Crucible for holding molten metal |
US4061871A (en) * | 1975-05-02 | 1977-12-06 | Leybold-Heraeus Gmbh & Co. Kg | Electron gun for heating, melting and vaporizing purposes, with deflection systems |
US4947404A (en) * | 1987-11-16 | 1990-08-07 | Hanks Charles W | Magnet structure for electron-beam heated evaporation source |
DE4225352C1 (de) * | 1992-07-31 | 1993-11-18 | Leybold Ag | Vorrichtung zum reaktiven Aufdampfen von Metallverbindungen und Verfahren |
DE4342574C1 (de) * | 1993-12-14 | 1995-04-13 | Hilmar Weinert | Bandbedampfungsanlage |
US5614273A (en) * | 1993-10-27 | 1997-03-25 | Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung, E.V. | Process and apparatus for plasma-activated electron beam vaporization |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1814142A1 (de) * | 1967-12-13 | 1969-07-31 | Lokomotivbau Elektrotech | Einrichtung zum Bedampfen im Vakuum von grossen Flaechen |
JPS63247358A (ja) * | 1987-04-03 | 1988-10-14 | Matsushita Electric Ind Co Ltd | 金属薄膜の製造装置 |
JPH0294250U (de) * | 1989-01-17 | 1990-07-26 | ||
DE4336680C2 (de) * | 1993-10-27 | 1998-05-14 | Fraunhofer Ges Forschung | Verfahren zum Elektronenstrahlverdampfen |
-
2006
- 2006-07-06 DE DE200610031244 patent/DE102006031244B4/de not_active Expired - Fee Related
-
2007
- 2007-06-28 WO PCT/EP2007/005715 patent/WO2008003425A1/de active Application Filing
- 2007-06-28 EP EP07764905A patent/EP2038912A1/de not_active Withdrawn
- 2007-06-28 CN CN2007800256069A patent/CN101484966B/zh not_active Expired - Fee Related
- 2007-06-28 JP JP2009516988A patent/JP5150626B2/ja not_active Expired - Fee Related
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3345059A (en) * | 1965-03-12 | 1967-10-03 | United States Steel Corp | Crucible for holding molten metal |
US4061871A (en) * | 1975-05-02 | 1977-12-06 | Leybold-Heraeus Gmbh & Co. Kg | Electron gun for heating, melting and vaporizing purposes, with deflection systems |
US4947404A (en) * | 1987-11-16 | 1990-08-07 | Hanks Charles W | Magnet structure for electron-beam heated evaporation source |
DE4225352C1 (de) * | 1992-07-31 | 1993-11-18 | Leybold Ag | Vorrichtung zum reaktiven Aufdampfen von Metallverbindungen und Verfahren |
US5614273A (en) * | 1993-10-27 | 1997-03-25 | Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung, E.V. | Process and apparatus for plasma-activated electron beam vaporization |
DE4342574C1 (de) * | 1993-12-14 | 1995-04-13 | Hilmar Weinert | Bandbedampfungsanlage |
Also Published As
Publication number | Publication date |
---|---|
WO2008003425A1 (de) | 2008-01-10 |
CN101484966A (zh) | 2009-07-15 |
EP2038912A1 (de) | 2009-03-25 |
JP2009542900A (ja) | 2009-12-03 |
JP5150626B2 (ja) | 2013-02-20 |
DE102006031244A1 (de) | 2008-01-10 |
DE102006031244B4 (de) | 2010-12-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C17 | Cessation of patent right | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120530 Termination date: 20130628 |