CN101478001B

CN101478001B - Collecting electrode IGBT having hole injection structure

Info

Publication number: CN101478001B
Application number: CN2008101476895A
Authority: CN
Inventors: 李泽宏; 钱梦亮; 张波
Original assignee: University of Electronic Science and Technology of China
Current assignee: University of Electronic Science and Technology of China
Priority date: 2008-11-27
Filing date: 2008-11-27
Publication date: 2011-07-20
Anticipated expiration: 2028-11-27
Also published as: CN101478001A

Abstract

A collector-short IGBT with a hole injection structure belongs to the technical field of semiconductor power devices. In the invention, the hole injection structure and a collector-short structure are introduced into a conventional planar non-punch through IGBT. The collector-short structure comprises short-circuit N<+> regions (3) and P-type collector regions (2) arranged alternately; and the hole injection structure (14) consists of a third P<+> body region (5), a third P-type base region (6), a third N<+> source region (7) and a floating conductor (11), wherein the floating conductor (11) is used for short-connecting the third P-type base region (6) and the third N<+> source region (7). By adopting the hole injection structure and the collector-short structure in the conventional planar non-punch through IGBT, the collector-short IGBT has lower conduction voltage drop, larger saturation current density and higher turn-off speed. According to the invention, the non-punch through IGBT can have better carrier concentration distribution in the base region, thereby achieving better consistence between the forward conduction voltage drop and turn-off loss.

Description

A kind of collecting electrode IGBT with hole injection structure

Technical field

A kind of collecting electrode IGBT (insulated gate bipolar transistor) with hole injection structure belongs to the semiconductor power device technology field.

Background technology

Insulated gate bipolar transistor is present a kind of hybrid power electronic device with fastest developing speed.It has the advantage that input impedance height, power controlling are little, drive circuit is simple, switching speed is high of MOSFET, has the advantage that current density is big, saturation pressure reduces, current handling capability is strong of bipolar power transistor again.Be widely used in the products such as electromagnetic oven, UPS uninterrupted power supply, automotive electronic igniter, threephase motor frequency converter, electric welding machine Switching Power Supply as power switch pipe or power output tube.

The insulated gate bipolar transistor of studying at the beginning of the 1980's successfully and going into operation is non-transparent collecting zone punch insulated gate bipolar transistor, abbreviates the punch insulated gate bipolar transistor today as, its structure as shown in Figure 1, it is the P in high concentration ⁺The insulated gate bipolar transistor structure that manufactures behind extension N type resilient coating 33, the N type base 4 successively on the substrate 22.Owing to exist N type resilient coating 33, electric field in N type resilient coating 33, will obtain stopping, thereby form a trapezoidal Electric Field Distribution, as shown in Figure 1, so can utilize thin N type base can obtain higher puncture voltage, help reducing conducting resistance, thereby reduction quiescent dissipation, but because P ⁺Substrate is thicker relatively, and is dense, makes that the injection efficiency of emitter junction is very high, and electronics can not flow out from back of the body emitter region substantially during shutoff, only lean against the compound disappearance of base, thereby its turn-off time is very long, has increased switching loss.In order to improve its switching characteristic, must control minority carrier life time, adopted the method for injecting such as electron irradiation, helium ion to reduce minority carrier life time, also there is human to mix heavy metal element control minority carrier life time.But, so, can cause conduction voltage drop to become negative temperature coefficient, the negative temperature coefficient characteristic of this conduction voltage drop is unfavorable for the parallel connection use of insulated gate bipolar transistor, because if wherein the electric current of an insulated gate bipolar transistor is bigger than normal, the thermoelectric positive feedback effect can make electric current more and more concentrate in this insulated gate bipolar transistor, makes its temperature more and more higher, finally causes device to burn.And the forward conduction of insulated gate bipolar transistor and switching characteristic have opposite requirement to the control of minority carrier life time, and promptly reducing of minority carrier life time can cause forward conduction voltage drop to increase, and these all can bring certain difficulty to Properties Control and manufacturing process.In addition, when the high pressure punch insulated gate bipolar transistor of making greater than 600V, the increase of required epitaxy layer thickness makes manufacturing cost increase greatly.

At the shortcoming of punch insulated gate bipolar transistor, developed the non-through insulated-gate bipolar transistor npn npn, its structure is as shown in Figure 2.Its topmost change is: adopted FZ (melt in the district) monocrystalline of high resistivity to replace expensive epitaxial wafer, crystal perfection and uniformity attain full and complete satisfaction, and form the lower and thin P district of emission effciency at the silicon chip back side with the method for injecting and annealing.This generally is referred to as " transparent collecting zone ", adopts this technology, can be so that insulated gate bipolar transistor be when turn-offing, and the excessive electronics of N type base can penetrate P district as thin as a wafer in the mode of diffusion, and reaches the effect of quick shutoff.Owing to adopted the transparent collecting zone technology, make the non-through insulated-gate bipolar transistor npn npn compare with the punch insulated gate bipolar transistor, have following Main Feature: conduction voltage drop is positive temperature coefficient, and power consumption and current tail are little with variation of temperature; Owing to the emission effciency of longitudinal P NP is decreased and controls, obviously improved the delay of OFF state; Because of without epitaxial wafer and low without Lifetime Control technology cost.Since the invention of non-through insulated-gate bipolar transistor npn npn, the insulated gate bipolar transistor that occurs substantially all adopts the transparent collecting zone technology later on.But the actual turn-off power loss of non-through insulated-gate bipolar transistor npn npn is than much bigger by the calculated value of common defined turn-off power loss gained.Document J.Yamashita, T.Yamada, S.Uchida, H.Yamaguchi and S.Ishizawa, " A Relation between Dynamic Saturation Characteristics and TailCurrent of Non-Punchthrough IGBT ", ConfRec.of 31st IAS Annual Meeting, vol.3, pp.1425-1432,1996 point out, the loss that the hangover electric current (tens microsecond) of collector electrode rated current below 10% produced in the calculating, the actual turn-off power loss of non-through insulated-gate bipolar transistor npn npn is wanted beguine the big 2-3 of calculated value times according to the turn-off power loss that defines in general sense, this mainly is too thick the causing in N type base owing to the non-through insulated-gate bipolar transistor npn npn, so be necessary further to reduce the turn-off power loss of non-through insulated-gate bipolar transistor npn npn.On the other hand, the non-through insulated-gate bipolar transistor npn npn is when adopting the transparent collecting zone technology to improve switching speed, owing to there has not been N type resilient coating, electric field will end at N type base, thereby form a leg-of-mutton Electric Field Distribution, as shown in Figure 2, so in order to guarantee the withstand voltage N type base that must adopt relative broad, cause the increase of conducting resistance, also just increased quiescent dissipation.Particularly when bearing high voltage, conductivity modulation effect will obviously weaken, particularly at the N near emitter ^-Base and JFET district, it will be more remarkable that conduction loss increases.So, only by reducing the trade off contradictory relation of conduction voltage drop and turn-off power loss of back of the body emitter region injection efficiency, its effect is very limited, document K.Sheng, F.Udrea, G.A.J.Amaratunga, " Optimum carrier distribution of theIGBT " (optimization of insulated gate bipolar transistor carrier concentration profile), Solid-State Electronics 44,1573-1583,2000 point out, realize optimizing preferably between forward conduction voltage drop and the turn-off power loss, and this and charge carrier are at N ^-The distribution of base is closely related, increases the concentration of emitter one side charge carrier, and the concentration that reduces collector electrode one side charge carrier helps realizing better optimize between them.

In order to realize trading off between better conduction voltage drop and the turn-off power loss, document T.Laska, M.Miinzer, F.Pfirsch, C.Schaeffer, T.Schmidt, " The Field Stop IGBT (FS IGBT)-A New Power Device Concept with aGreat Improvement Potential " (electric field termination type insulated gate bipolar transistor-a kind of novel power device) with very big lifting potentiality, ISPSD ' 2000, May 22-25, Toulouse, France has proposed a kind of electric field termination type insulated gate bipolar transistor, its structure as shown in Figure 3, the method that it adopts ion to inject is made a N type resilient coating 33 earlier at the silicon chip back side, annotate boron again and form P type collector region 2, because the existence of N type resilient coating 33, electric field will end at N type resilient coating 33, thereby form a trapezoidal Electric Field Distribution, as shown in Figure 3, so it is thinner to make that N type base 4 can be done.But the N type resilient coating 33 of electric field termination type insulated gate bipolar transistor surface texture all make finish after the back side inject to form, thereby can not carry out high temperature and anneal for a long time, therefore the thickness of N type resilient coating 33 and the activation concentration of impurity all are very limited, the highfield suspension layer of making high tension apparatus with so thin resilient coating is very unreliable physically, loses efficacy easily; And the silicon wafer thickness that electric field termination type insulated gate bipolar transistor requires is very thin, generally about 70 μ m, guarantee that so thin silicon chip does not break in the process of flow, and is not crooked, is quite difficult; Moreover electric field termination type insulated gate bipolar transistor is not remarkable to the distribution change of charge carrier in the N type base, so the optimization between forward conduction voltage drop and the turn-off power loss also can further improve again.

Summary of the invention

The object of the present invention is to provide a kind of collecting electrode IGBT with hole injection structure, it has hole injection structure and collector electrode short-circuit structure, can obtain lower conduction voltage drop, bigger saturation current density and turn-off speed faster.Compare with traditional non-through insulated-gate bipolar transistor npn npn, at 100A/cm ²Current density under, forward conduction voltage drop has reduced by 1 volt, saturation current density improves 2.5 times.Adopt the present invention can also make the non-through insulated-gate bipolar transistor npn npn have more excellent base carrier concentration profile, thereby obtain trading off between better forward conduction voltage drop and the turn-off power loss.

Technical solution of the present invention is as follows:

A kind of collecting electrode IGBT with hole injection structure, as shown in Figure 4, it comprises metallization collector electrode 1, P type collector region 2, N ^-Base 4, P ⁺Tagma 5, P type base 6, N ⁺Source region 7, polygate electrodes 8, silicon dioxide gate oxide 9, metallizing source 10; P wherein ⁺Tagma (5) is by a P ⁺Tagma (5), the 2nd P ⁺Tagma (5) and the 3rd P ⁺Tagma (5) constitutes, N ⁺Source region (7) is by a N ⁺Source region (7), the 2nd N ⁺Source region (7) and the 3rd N ⁺Source region (7) constitutes, and metallizing source (10) is made of first metallizing source (10) and second metallizing source (10); Device up is metallization collector electrode 1, P type collector region 2, N from bottom successively ^-Base 4; Occupy N ^-Both sides, 4 top, base are a P from lower to upper successively ⁺Tagma 5, a P type base 6, a N ⁺Source region 7 and the 2nd P ⁺Tagma 5, the 2nd P type base 6, the 2nd N ⁺Source region 7; First metallizing source 10 is with a P type base 6 and a N ⁺Source region 7 short circuits, and connect source potential; Second metallizing source 10 is with the 2nd P type base 6 and the 2nd N ⁺Source region 7 short circuits, and connect source potential; First polygate electrodes 8 is by silicon dioxide gate oxide 9 and first metallizing source 10, a N ⁺Source region 7, a P type base 6 and a N ^-Base 4 is isolated; Second polygate electrodes 8 is by silicon dioxide gate oxide 9 and second metallizing source 10, the 2nd N ⁺Source region 7, the 2nd P type base 6 and N ^-Base 4 is isolated.

Collecting electrode IGBT with hole injection structure of the present invention also comprises short circuit N ⁺District 3 and hole injection structure 14, described short circuit N ⁺District 3 and P type collector region 2 constitute the collector electrode short-circuit structure alternately jointly; Described hole injection structure 14 is by the 3rd P ⁺Tagma 5, the 3rd P type base 6, the 3rd N ⁺Source region 7 and floating empty conductor 11 constitute, and described floating empty conductor 11 is with the 3rd P type base 6 and the 3rd N ⁺Source region 7 short circuits, and current potential keeps floating empty.

Described metallization collector electrode 1, P type collector region 2, N ^-A base 4 and a P ⁺Tagma 5, a P type base 6, a N ⁺Source region 7, polygate electrodes 8, silicon dioxide gate oxide 9, first metallizing source 10 constitute the first insulated gate bipolar transistor structure 12; Described metallization collector electrode 1, P type collector region 2, N ^-Base 4 and the 2nd P ⁺Tagma 5, the 2nd P type base 6, the 2nd N ⁺Source region 7, polygate electrodes 8, silicon dioxide gate oxide 9, second metallizing source 10 constitute the second insulated gate bipolar transistor structure 12; Described metallization collector electrode 1, short circuit N ⁺District 3, N ^-Base 4 and part the 2nd P type base 6, part the 3rd P type base 6, part the 2nd N ⁺Source region 7, part the 3rd N ⁺Source region 7 and polygate electrodes 8, silicon dioxide gate oxide 9 constitute vertical double diffused mos 13.

Operation principle of the present invention:

A kind of collecting electrode IGBT provided by the invention with hole injection structure, it is big to overcome traditional non-through insulated-gate bipolar transistor npn npn conduction voltage drop, the shortcoming that actual turn-off power loss is higher, obtain preferably compromise between the conduction voltage drop and turn-off power loss, be example now, operation principle of the present invention is described with Fig. 4.

A kind of collecting electrode IGBT provided by the present invention with hole injection structure, on the basis of traditional non-through insulated-gate bipolar transistor npn npn, adopted one by short circuit N type district (3) collector electrode short-circuit structure and hole injection structure 14 with P type collector region (2) formation.This hole injection structure and insulated gate bipolar transistor surface cellular structural similarity, different is to adopt the floating empty conductor 11 of a current potential with the 3rd P type base 6 and the 3rd N in this hole injection structure ⁺Source region 7 short circuits, and its current potential can be controlled by the vertical double diffused mos among the figure 13.Under blocking state, the depletion layer of hole injection structure and other insulated gate bipolar transistor surface cellular merges mutually, and to low-doped N type base expansion, thereby it is high withstand voltage that device is born.Add a positive voltage on grid, make the raceway groove transoid, insulated gate bipolar transistor structure 12 and vertical double diffused mos 13 are opened simultaneously, and the latter half of 2 pairs of N types of P type collector region base is carried out electricity and led modulation.Because the existence of vertical double diffused mos 13, the current potential of hole injection structure raises with the collector electrode variation, realization is to the JFET district of insulated gate bipolar transistor and the first half injected hole of N type base, lead modulation thereby carry out electricity, forward conduction voltage drop is reduced greatly.Simultaneously, vertical double diffused mos 13 also can be injected in the part hole of hole injection structure, its conduction voltage drop is also further reduced, so, make the whole JFET district of device and N type base obtain effective electricity and lead modulation, thereby obtain lower conduction loss.Because the mode that this structure has adopted hole injection structure and current collection collection short-circuit structure to combine, when improving devices switch speed, also make the hole injection efficiency of insulated gate bipolar transistor emitter one side improve, make the distribution of charge carrier more help realizing the optimization of forward conduction voltage drop and turn-off power loss in N type base.Have no progeny in the device pass, superfluous electronics can be taken away soon by the short circuit N type district of collector electrode, and superfluous hole then can flow away by the P type base of insulated gate bipolar transistor surface cellular, thereby has realized switching speed faster.For traditional insulated gate bipolar crystal that only adopts the collector electrode short circuit, at the break-over of device initial stage is the conduction mode of a DMOS, lack electricity and lead modulating action, so carrier concentration is lower in the N type base, conduction loss increases, so the raising of collector electrode short circuit insulated gate bipolar transistor turn-off speed is a cost to sacrifice conduction loss; And a kind of collecting electrode IGBT with hole injection structure provided by the present invention, when improving switching speed, can obtain than the much lower conduction voltage drop of traditional non-through insulated-gate bipolar transistor npn npn, this mainly is because the existence of described hole injection structure 14, just can obtain effective electricity at the break-over of device initial stage and lead modulating action, carrier concentration is higher relatively in the N type base, conduction loss reduces, so a kind of collecting electrode IGBT with hole injection structure provided by the present invention has also reduced conduction loss when improving switching speed.Meanwhile, because the electricity of 14 pairs of nearly surface regions of hole injection structure is led modulating action, changed of the distribution of traditional charge carrier in N type base, make the carrier concentration of nearly surface portion improve greatly, and decrease relatively near the concentration of collector electrode part, the optimization that has realized charge carrier distributes, and can obtain trading off between better conduction voltage drop and the turn-off power loss.

Can get by the MEDICI simulation software, to as shown in Figure 4 a kind of who is provided have the collecting electrode IGBT of hole injection structure, as shown in Figure 5 traditional non-through insulated-gate bipolar transistor npn npn and collector electrode short circuit insulated gate bipolar transistor as shown in Figure 6 carried out emulation relatively.600 volts the non-through insulated-gate bipolar transistor npn npn structure that analogue simulation thin slice technology is made, the simulation parameter of traditional non-through insulated-gate bipolar transistor npn npn are that P type collector region mixes 5 * 10 ¹⁷Cm ^-3, thickness is 5 μ m; N ^-Base doping 1 * 10 ¹⁴Cm ^-3, thickness is 90 μ m; Gate oxide thickness is 30nm, N ⁺The source region mixes 1 * 10 ²⁰Cm ^-3, P type base doping 2 * 10 ¹⁷Cm ^-3, P ⁺The tagma mixes 4 * 10 ¹⁹Cm ^-3, emulation cellular width is 30 μ m; The simulation parameter of collector electrode short circuit insulated gate bipolar transistor is that P type collector region mixes 4 * 10 ¹⁹Cm ^-3, other parameter and traditional non-through insulated-gate bipolar transistor npn npn are identical; A kind of collecting electrode IGBT simulation parameter with hole injection structure that is provided is that P type collector region mixes 4 * 10 ¹⁹Cm ^-3, the cellular width is 60 μ m, other parameter and traditional non-through insulated-gate bipolar transistor npn npn are identical; Selected P type collector region doping content difference, be in order to realize trading off between better conduction voltage drop and the turn-off power loss, for collector electrode short circuit insulated gate bipolar transistor and a kind of collecting electrode IGBT provided by the present invention with hole injection structure, all has the collector electrode short-circuit structure, greatly accelerated the extraction of electronics in the device turn off process, turn-off power loss has fallen very lowly, mixes and reduces conduction loss so can improve P type collector region relatively.A kind of collecting electrode IGBT with hole injection structure of the present invention is 20 volts in grid voltage, the N when collector voltage is 2.65 volts ^-Hole concentration in the base, 2 dimension distribution maps of electron concentration and CURRENT DISTRIBUTION curve are as shown in Figure 7, as seen from the figure, because the existence of hole injection structure, can realize the JFET district of insulated gate bipolar transistor and the first half injected hole of N type base are carried out electricity to it and lead modulation, make the whole JFET district of device and N type base all obtain effective electricity and lead modulation, improve the carrier concentration of N type base, thereby obtain lower conduction loss.Fig. 8 is the comparison diagram to three kinds of structures conduction voltage drop under different current densities, as seen from the figure, compare with traditional non-through insulated-gate bipolar transistor npn npn, the forward conduction voltage drop of collector electrode short circuit insulated gate bipolar transistor obviously increases, conduction loss significantly increases, and a kind of collecting electrode IGBT with hole injection structure provided by the invention can obtain lower conduction voltage drop, at 100A/cm ²Current density under, forward conduction voltage drop has reduced by 1 volt.Fig. 9 is above-mentioned three kinds of structures in grid voltage is 20 volts I-V curve chart, as seen from the figure, owing to adopted the collector electrode short-circuit structure, has not only increased conduction loss for collector electrode short circuit insulated gate bipolar transistor, also reduces saturation current density greatly; And for a kind of collecting electrode IGBT with hole injection structure of the present invention, because the existence of hole injection structure, when reducing conduction voltage drop, saturation current density is improved greatly, and the contradictory relation between forward conduction voltage drop and the reverse turn-off power loss has obtained better compromise.

In sum, a kind of collecting electrode IGBT provided by the invention with hole injection structure, owing to combine collector electrode short-circuit structure and hole injection structure, make whole N type base and JFET district can both obtain effective electricity and lead modulation, when reducing turn-off power loss, also greatly reduce conduction loss, realized between forward conduction voltage drop and the turn-off power loss better compromise.Compare with traditional non-through insulated-gate bipolar transistor npn npn, at 100A/cm ²Current density under, forward conduction voltage drop has reduced by 1 volt, saturation current density has improved 2.5 times.

Description of drawings

Fig. 1 is traditional punch insulated gate bipolar transistor structural representation.

Wherein, the 1st, metallization collector electrode, the 22nd, P ⁺The end, the 33rd, N type resilient coating, the 4th, N ^-The base, the 5th, P ⁺The tagma, the 6th, P type base, the 7th, N ⁺The source region, the 8th, polygate electrodes, the 9th, silicon dioxide gate oxide, the 10th, metallizing source.

Fig. 2 is traditional non-through insulated-gate bipolar transistor npn npn structural representation.

Wherein, the 1st, metallization collector electrode, the 2nd, P type collector region, the 4th, N ^-The base, the 5th, P ⁺The tagma, the 6th, P type base, the 7th, N ⁺The source region, the 8th, polygate electrodes, the 9th, silicon dioxide gate oxide, the 10th, metallizing source.

Fig. 3 is an electric field termination type insulated gate bipolar transistor structural representation.

Wherein, the 1st, metallization collector electrode, the 2nd, P type collector region, the 33rd, N type resilient coating, the 4th, N ^-The base, the 5th, P ⁺The tagma, the 6th, P type base, the 7th, N ⁺The source region, the 8th, polygate electrodes, the 9th, silicon dioxide gate oxide, the 10th, metallizing source.

Fig. 4 is a kind of collecting electrode IGBT structural representation with hole injection structure provided by the invention.

Wherein, the 1st, metallization collector electrode, the 2nd, P type collector region, the 3rd, short circuit N ⁺The district, the 4th, N ^-The base, the 5th, P ⁺The tagma, the 6th, P type base, the 7th, N ⁺The source region, the 8th, polygate electrodes, the 9th, silicon dioxide gate oxide, the 10th, metallizing source, the 11st, floating empty conductor, the 12nd, traditional insulated gate bipolar transistor structure, the 13rd, vertical double diffused mos, the 14th, hole injection structure.

Fig. 5 is the non-through insulated-gate bipolar transistor npn npn structural representation that emulation is adopted.

Fig. 6 is the collector electrode short circuit insulated gate bipolar transistor structural representation that emulation is adopted.

Wherein, the 1st, metallization collector electrode, the 2nd, P type collector region, the 3rd, short circuit N ⁺The district, the 4th, N ^-The base, the 5th, P ⁺The tagma, the 6th, P type base, the 7th, N ⁺The source region, the 8th, polygate electrodes, the 9th, silicon dioxide gate oxide, the 10th, metallizing source.

Fig. 7 is that a kind of collecting electrode IGBT with hole injection structure of the present invention is 20 volts in grid voltage, N when collector voltage is 2.65 volts ^-Hole concentration in the base, 2 dimension distribution map and CURRENT DISTRIBUTION curves of electron concentration.

Wherein, the left side is 20 volts of grid voltages, 2 of hole concentration dimension distribution maps during 2.65 volts of collector voltages; Middle figure be 20 volts of grid voltages, and 2 of electron concentration tie up distribution maps during 2.65 volts of collector voltages; The right is 20 volts of grid voltages, the CURRENT DISTRIBUTION curve during 2.65 volts of collector voltages.

Fig. 8 is traditional non-through insulated-gate bipolar transistor npn npn, collector electrode short circuit insulated gate bipolar transistor and a kind of comparison diagram with collecting electrode IGBT conduction voltage drop under different current densities of hole injection structure provided by the present invention.

Wherein, conventional IGBT is meant traditional non-through insulated-gate bipolar transistor npn npn, CS-IGBT is meant collector electrode short circuit insulated gate bipolar transistor, and New IGBT is meant a kind of collecting electrode IGBT with hole injection structure provided by the present invention.

Fig. 9 is traditional non-through insulated-gate bipolar transistor npn npn, collector electrode short circuit insulated gate bipolar transistor and a kind of I-V curve comparison diagram of collecting electrode IGBT when grid voltage is 20 volts with hole injection structure provided by the present invention.

Embodiment

Adopt a kind of collecting electrode IGBT with hole injection structure provided by the present invention, can realize low conduction voltage drop, high saturation current density realizes trading off between better forward conduction voltage drop and the turn-off power loss.Along with development of semiconductor, adopt the present invention can also make more low energy-consumption electronic device fast.

A kind of collecting electrode IGBT with hole injection structure, as shown in Figure 4, it comprises metallization collector electrode 1, P type collector region 2, N ^-Base 4, P ⁺Tagma 5, P type base 6, N ⁺Source region 7, polygate electrodes 8, silicon dioxide gate oxide 9, metallizing source 10; Device up is metallization collector electrode 1, P type collector region 2, N from bottom successively ^-Base 4; Occupy N ^-Both sides, 4 top, base are a P from lower to upper successively ⁺Tagma 5, a P type base 6, a N ⁺Source region 7 and the 2nd P ⁺Tagma 5, the 2nd P type base 6, the 2nd N ⁺Source region 7; First metallizing source 10 is with a P type base 6 and a N ⁺Source region 7 short circuits, and connect source potential; Second metallizing source 10 is with the 2nd P type base 6 and the 2nd N ⁺Source region 7 short circuits, and connect source potential; First polygate electrodes 8 is by silicon dioxide gate oxide 9 and first metallizing source 10, a N ⁺Source region 7, a P type base 6 and a N ^-Base 4 is isolated; Second polygate electrodes 8 is by silicon dioxide gate oxide 9 and second metallizing source 10, the 2nd N ⁺Source region 7, the 2nd P type base 6 and N ^-Base 4 is isolated.

A kind of collecting electrode IGBT with hole injection structure provided by the present invention, its specific implementation technology comprises: choose N type＜100〉crystal orientation zone melting single-crystal liner, an oxidation, photoetching and boron injection, gate oxidation, deposit polysilicon, photoetching polysilicon, P tagma are injected, the P tagma pushes away trap, N ⁺The deposition of source region photoetching and injection, floating empty conductor and photoetching, deposited oxide layer, quarter fairlead, plated metal, metal exposure etching, the injection of the transparent P in back side district, short circuit N ⁺District's photoetching and injection, back face metalization and passivation or the like.

In implementation process, can be as the case may be, under the constant situation of basic structure, carry out certain accommodation design.For example: can be every one or more consumption insulated gate bipolar transistor cellular 12 integrated vertical double diffused mos 14; Described short circuit N ⁺District 3 is being K with described P type collector region 2 perpendicular to the area ratio on the sense of current, and the span of K is between 0.05 to 0.5; Described by short circuit N ⁺District 3, its shape can be regular shapes such as square, bar shaped or circle, also can be non-regular shapes such as trapezoidal, ellipse; Described floating empty conductor 11 can adopt bonding jumper to realize.

Claims

1. collecting electrode IGBT with hole injection structure, it comprises metallization collector electrode (1), P type collector region (2), N ^-Base (4), P ⁺Tagma (5), P type base (6), N ⁺Source region (7), polygate electrodes (8), silicon dioxide gate oxide (9), metallizing source (10); P wherein ⁺Tagma (5) is by a P ⁺Tagma (5), the 2nd P ⁺Tagma (5) and the 3rd P ⁺Tagma (5) constitutes, N ⁺Source region (7) is by a N ⁺Source region (7), the 2nd N ⁺Source region (7) and the 3rd N ⁺Source region (7) constitutes, and metallizing source (10) is made of first metallizing source (10) and second metallizing source (10);

Device up is metallization collector electrode (1), P type collector region (2), N from bottom successively ^-Base (4); Occupy N ^-Both sides, top, base (4) are a P from lower to upper successively ⁺Tagma (5), a P type base (6), a N ⁺Source region (7) and the 2nd P ⁺Tagma (5), the 2nd P type base (6), the 2nd N ⁺Source region (7); First metallizing source (10) is with a P type base (6) and a N ⁺Source region (7) short circuit, and connect source potential; Second metallizing source (10) is with the 2nd P type base (6) and the 2nd N ⁺Source region (7) short circuit, and connect source potential; First polygate electrodes (8) is by silicon dioxide gate oxide (9) and first metallizing source (10), a N ⁺Source region (7), a P type base (6) and a N ^-Base (4) is isolated; Second polygate electrodes (8) is by silicon dioxide gate oxide (9) and second metallizing source (10), the 2nd N ⁺Source region (7), the 2nd P type base (6) and N ^-Base (4) is isolated;

It is characterized in that it also comprises short circuit N ⁺District (3) and hole injection structure (14), described short circuit N ⁺District (3) and P type collector region (2) constitute the collector electrode short-circuit structure alternately jointly; Described hole injection structure (14) is by the 3rd P ⁺Tagma (5), the 3rd P type base (6), the 3rd N ⁺Source region (7) and floating empty conductor (11) constitute, and described floating empty conductor (11) is with the 3rd P type base (6) and the 3rd N ⁺Source region (7) short circuit, and current potential keeps floating empty;

Described metallization collector electrode (1), P type collector region (2), N ^-A base (4) and a P ⁺Tagma (5), a P type base (6), a N ⁺Source region (7), polygate electrodes (8), silicon dioxide gate oxide (9), first metallizing source (10) constitute the first insulated gate bipolar transistor structure (12); Described metallization collector electrode (1), P type collector region (2), N ^-Base (4) and the 2nd P ⁺Tagma (5), the 2nd P type base (6), the 2nd N ⁺Source region (7), polygate electrodes (8), silicon dioxide gate oxide (9), second metallizing source (10) constitute the second insulated gate bipolar transistor structure (12); Described metallization collector electrode (1), short circuit N ⁺District (3), N ^-Base (4) and part the 2nd P type base (6), part the 3rd P type base (6), part the 2nd N ⁺Source region (7), part the 3rd N ⁺Source region (7) and polygate electrodes (8), silicon dioxide gate oxide (9) constitute vertical double diffused mos (13).

2. a kind of collecting electrode IGBT with hole injection structure according to claim 1 is characterized in that, described short circuit N ⁺District (3) is being K with described P type collector region (2) perpendicular to the area ratio on the sense of current, and the span of K is between 0.05 to 0.5.

3. a kind of collecting electrode IGBT with hole injection structure according to claim 1 is characterized in that, described short circuit N ⁺The shape in district (3) is square, bar shaped or circle.

4. a kind of collecting electrode IGBT with hole injection structure according to claim 1 is characterized in that, described short circuit N ⁺The shape in district (3) is trapezoidal or oval.

5. a kind of collecting electrode IGBT with hole injection structure according to claim 1 is characterized in that, described floating empty conductor (11) is floating empty bonding jumper.