CN101456149A - Feeding device of chemical mechanical polishing liquid and polishing liquid treatment method - Google Patents
Feeding device of chemical mechanical polishing liquid and polishing liquid treatment method Download PDFInfo
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- CN101456149A CN101456149A CNA2007100944234A CN200710094423A CN101456149A CN 101456149 A CN101456149 A CN 101456149A CN A2007100944234 A CNA2007100944234 A CN A2007100944234A CN 200710094423 A CN200710094423 A CN 200710094423A CN 101456149 A CN101456149 A CN 101456149A
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- abrasive grains
- lapping liquid
- mechanical polishing
- polishing liquid
- feed pipeline
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Abstract
The invention discloses a device for feeding chemico-mechanical polishing lapping liquid. The device comprises a feeding pipeline of the lapping liquid, wherein the feeding pipeline is provided with a supersonic wave generator which sends out supersonic waves to the lapping liquid in the feeding pipeline so as to decompose large grinding particles in the lapping liquid into small grinding particles. The invention also discloses a method for processing the lapping liquid, wherein the supersonic wave generator sends out the supersonic waves to the lapping liquid in the feeding pipeline so as to decompose the large grinding particles in the lapping liquid into the small grinding particles. The feeding device and the method adopt the supersonic wave generator to send out the supersonic waves to decompose the large grinding particles into the small grinding particles, thereby effectively avoiding the damage to a silicon slice caused by the large grinding particles, improving the effect of the chemico-mechanical polishing, reducing the process cost of the chemico-mechanical polishing, and improving the process stability of the chemico-mechanical polishing.
Description
Technical field
The present invention relates to a kind of semiconductor manufacturing facility, especially a kind of feeding device of chemical mechanical polishing liquid.The invention still further relates to a kind of processing method of lapping liquid.
Background technology
In chemically mechanical polishing (CMP) technology, need to use lapping liquid that silicon chip is ground.Be doped with abrasive grains in the lapping liquid.The size of abrasive grains particle diameter is extremely important to the effect of grinding, if particle diameter is excessive, can cause causing scuffing at silicon chip surface.In the ordinary course of things, abrasive grains can be assembled, and makes the less abrasive grains of a lot of particle diameters be gathered into the bigger abrasive grains of particle diameter, thus the effect that influence is ground.Scratch for reducing the silicon chip surface that causes because of the abrasive grains gathering, the feeding device of existing chemical mechanical polishing liquid as shown in Figure 1, it has installed filter additional on the lapping liquid feeding system, described filter generally adopts coordinate filter (POU filter), and bulky grain is filtered out.But,, also bring a lot of negative effects simultaneously though this method can reduce the scuffing to silicon chip surface.This method is to filter to remove to the processing method of big abrasive grains, has therefore reduced the effective ingredient abrasive grains that plays main grinding function in CMP process, thereby has caused the reduction of grinding effect; In addition, therefore the filter opening of big sometimes abrasive grains meeting blocking filter also need increase the technology cost with often changing filter, has reduced capacity utilization; Because the use of filter, the flow of lapping liquid can change with the service time of filter, had influenced the stability of CMP process.
Summary of the invention
Technical problem to be solved by this invention has provided a kind of feeding device of chemical mechanical polishing liquid, and a kind of polishing liquid treatment method, reduce the technology cost of chemically mechanical polishing, improve the effect of chemically mechanical polishing, improve the technology stability of chemically mechanical polishing.
For solving the problems of the technologies described above, the technical scheme of the feeding device of chemical mechanical polishing liquid of the present invention is, the feed pipeline that comprises lapping liquid, described feed pipeline is provided with ultrasonic generator, the lapping liquid of described ultrasonic generator in described feed pipeline sends ultrasonic wave, and the big abrasive grains in the described lapping liquid is resolved into little abrasive grains.
The present invention also provides a kind of polishing liquid treatment method that adopts the feeding device realization of above-mentioned chemical mechanical polishing liquid, described ultrasonic generator sends ultrasonic wave to lapping liquid in described feed pipeline, the big abrasive grains in the described lapping liquid is resolved into little abrasive grains.
The present invention adopts ultrasonic generator to send ultrasonic wave to make big abrasive grains resolve into little abrasive grains, effectively avoided of the damage of big abrasive grains to silicon chip, improved the effect of chemically mechanical polishing, reduce the technology cost of chemically mechanical polishing, improved the technology stability of chemically mechanical polishing.
Description of drawings
The present invention is further detailed explanation below in conjunction with drawings and Examples:
Fig. 1 is the schematic diagram of the feeding device of existing chemical mechanical polishing liquid;
Fig. 2 is the schematic diagram of the feeding device of chemical mechanical polishing liquid of the present invention.
The specific embodiment
The feeding device of chemical mechanical polishing liquid of the present invention, as shown in Figure 2, the feed pipeline that comprises lapping liquid, described feed pipeline is provided with ultrasonic generator, the lapping liquid of described ultrasonic generator in described feed pipeline sends ultrasonic wave, and the big abrasive grains in the described lapping liquid is resolved into little abrasive grains.
The feeding device of chemical mechanical polishing liquid of the present invention, also be provided with real-time particle size measurer and control device on its described feed pipeline, described real-time particle size measurer is measured the size of abrasive grains in the described feed pipeline in real time, and the information of abrasive grains size sent to described control device, described control device is controlled the operate power of described ultrasonic generator according to the information of described abrasive grains size.
The present invention also provides a kind of polishing liquid treatment method that utilizes the feeding device realization of above-mentioned chemical mechanical polishing liquid, described ultrasonic generator sends ultrasonic wave to lapping liquid in described feed pipeline, the big abrasive grains in the described lapping liquid is resolved into little abrasive grains.
Described real-time particle size measurer is measured the size of abrasive grains in the described feed pipeline in real time, and the information of abrasive grains size sent to described control device, if the particle diameter of described abrasive grains is big more, described control device just increases the power of described ultrasonic generator until maximum; If the particle diameter of described abrasive grains is more little, described control device just reduces the power of described ultrasonic generator until shutoff.
The present invention uses the big abrasive grains of ultrasound bath device scatter-gather, has exempted filter, has reduced the use of consumptive material, thereby can effectively reduce the technology cost.In addition, the abrasive grains after the dispersion has better grain size unicity, can effectively reduce the scuffing of silicon chip surface, has improved the stability of CMP process.
Claims (4)
1. the feeding device of a chemical mechanical polishing liquid, the feed pipeline that comprises lapping liquid, it is characterized in that, described feed pipeline is provided with ultrasonic generator, the lapping liquid of described ultrasonic generator in described feed pipeline sends ultrasonic wave, and the big abrasive grains in the described lapping liquid is resolved into little abrasive grains.
2. the feeding device of chemical mechanical polishing liquid according to claim 1, it is characterized in that, also be provided with real-time particle size measurer and control device on the described feed pipeline, described real-time particle size measurer is measured the size of abrasive grains in the described feed pipeline in real time, and the information of abrasive grains size sent to described control device, described control device is controlled the operate power of described ultrasonic generator according to the information of described abrasive grains size.
3. polishing liquid treatment method that the feeding device that utilizes claim 1 or 2 described chemical mechanical polishing liquids is realized, it is characterized in that, described ultrasonic generator sends ultrasonic wave to lapping liquid in described feed pipeline, the big abrasive grains in the described lapping liquid is resolved into little abrasive grains.
4. polishing liquid treatment method according to claim 3, it is characterized in that, described real-time particle size measurer is measured the size of abrasive grains in the described feed pipeline in real time, and the information of abrasive grains size sent to described control device, if the particle diameter of described abrasive grains is big more, described control device just increases the power of described ultrasonic generator until maximum; If the particle diameter of described abrasive grains is more little, described control device just reduces the power of described ultrasonic generator until shutoff.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CNA2007100944234A CN101456149A (en) | 2007-12-11 | 2007-12-11 | Feeding device of chemical mechanical polishing liquid and polishing liquid treatment method |
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CNA2007100944234A CN101456149A (en) | 2007-12-11 | 2007-12-11 | Feeding device of chemical mechanical polishing liquid and polishing liquid treatment method |
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CN101456149A true CN101456149A (en) | 2009-06-17 |
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CNA2007100944234A Pending CN101456149A (en) | 2007-12-11 | 2007-12-11 | Feeding device of chemical mechanical polishing liquid and polishing liquid treatment method |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101716745B (en) * | 2009-11-09 | 2011-06-29 | 清华大学 | Device and method for polishing sapphire substrate material by ultrasound assisted chemical machinery |
CN110153871A (en) * | 2019-05-17 | 2019-08-23 | 西安奕斯伟硅片技术有限公司 | Grinding method, the evaluation method of polishing fluid, corresponding intrument and silicon wafer |
CN110426839A (en) * | 2019-07-17 | 2019-11-08 | 维沃移动通信有限公司 | Terminal device |
CN112677032A (en) * | 2019-10-17 | 2021-04-20 | 夏泰鑫半导体(青岛)有限公司 | Grinding fluid conveying module and chemical mechanical grinding device |
-
2007
- 2007-12-11 CN CNA2007100944234A patent/CN101456149A/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101716745B (en) * | 2009-11-09 | 2011-06-29 | 清华大学 | Device and method for polishing sapphire substrate material by ultrasound assisted chemical machinery |
CN110153871A (en) * | 2019-05-17 | 2019-08-23 | 西安奕斯伟硅片技术有限公司 | Grinding method, the evaluation method of polishing fluid, corresponding intrument and silicon wafer |
CN110426839A (en) * | 2019-07-17 | 2019-11-08 | 维沃移动通信有限公司 | Terminal device |
CN110426839B (en) * | 2019-07-17 | 2022-03-01 | 维沃移动通信有限公司 | Terminal device |
CN112677032A (en) * | 2019-10-17 | 2021-04-20 | 夏泰鑫半导体(青岛)有限公司 | Grinding fluid conveying module and chemical mechanical grinding device |
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Open date: 20090617 |