CN101454657A - 用于探测气体成分的荧光传感器 - Google Patents

用于探测气体成分的荧光传感器 Download PDF

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CN101454657A
CN101454657A CNA2007800199653A CN200780019965A CN101454657A CN 101454657 A CN101454657 A CN 101454657A CN A2007800199653 A CNA2007800199653 A CN A2007800199653A CN 200780019965 A CN200780019965 A CN 200780019965A CN 101454657 A CN101454657 A CN 101454657A
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optical sensor
diffusion layer
fluorescent optical
gas
fluorescence coating
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T·贝克
I·塞汉
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IDESD AG
Airbus Defence and Space GmbH
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/75—Systems in which material is subjected to a chemical reaction, the progress or the result of the reaction being investigated
    • G01N21/77—Systems in which material is subjected to a chemical reaction, the progress or the result of the reaction being investigated by observing the effect on a chemical indicator
    • G01N21/78—Systems in which material is subjected to a chemical reaction, the progress or the result of the reaction being investigated by observing the effect on a chemical indicator producing a change of colour
    • G01N21/783—Systems in which material is subjected to a chemical reaction, the progress or the result of the reaction being investigated by observing the effect on a chemical indicator producing a change of colour for analysing gases
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/75—Systems in which material is subjected to a chemical reaction, the progress or the result of the reaction being investigated
    • G01N21/77—Systems in which material is subjected to a chemical reaction, the progress or the result of the reaction being investigated by observing the effect on a chemical indicator
    • G01N2021/7769—Measurement method of reaction-produced change in sensor
    • G01N2021/7786—Fluorescence

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Abstract

用于探测气体成分的荧光传感器，具有承载基底(1)和设置在该承载基底上的荧光层(10)，所述荧光层基本上由气体可渗透的在其中装填有荧光染料(3)的聚合物基体(2)构成，其中，在荧光层(10)上设有由气体可渗透的陶瓷和/或聚合物构成的扩散层(4)，所述扩散层是如此适配的，使得它引起从待探测的外界(5)到荧光层(10)的气体扩散的时间延迟并且反之亦然。

Description

用于探测气体成分的荧光传感器
本发明涉及一种用于探测气体成分的荧光传感器，它具有承载基底和设置在该承载基底上的荧光层，所述荧光层基本上由气体可渗透的且在其中填充有荧光染料的聚合物基体构成。
上述类型的已公开的荧光传感器是如此设计的，即它们优选对在包含有氧或者NO2化合物或者它们的混合物的待探测环境中的目标气体有反应。通过这一措施例如也可探测到炸药。通常由一种离荧光传感器合适距离设置的测量装置检测到传感器的荧光，并且以电或电子方式在合适的信号发送器中转换成期望的信号。
只要由荧光传感器所产生的信号要在不同时间或者与探测地点不同地继续传输，则就应该设置相应的存储介质，至少为信号设置相应的输送装置，通常这和构造费用联系在一起。
本发明的任务是提供一种荧光传感器，其由探测气体成分所产生的荧光能保持期望的时间段，这样读取测量装置就不必直接设置在待探测的气体成分所在的地点上，而是在移动到另一地点或者在期望的时间段之后，这个荧光传感器可将已探测到的气体成分传输到在那时存在的或者在那里存在的读取测量装置中。
根据本发明所提出的任务是通过下述措施完成的，即在按照权利要求1的前序部分所述的荧光传感器中，在荧光层上设有由气体可渗透的陶瓷和/或聚合物构成的扩散层。这个扩散层是如此适配的，使得它引起从待探测的外界到荧光层的气体扩散的时间延迟并且反之亦然。
环境的待测量气体如此程度地，也就是比较慢地传播到荧光层中，并且以相同的方式比较慢地从那里扩散开。也就是说在一定时间内气体成分直接保留在荧光层上，这样，那些相应发出的荧光以时间上的延迟显示出外界的气体成分。以这种方式能够将荧光传感器从待探测的外界中取出，并且用合适的读取光学设备获得被探测环境的气体成分。这种时间的延迟有很大的好处，即它使得用户能够用手持测量设备测量符合保存状态的荧光或者确定气体浓度。
可按照扩散层的所选择的参数来校准荧光应被储存的时间段。扩散层例如是如此设计的，使得气体能进行多个小时的储存。
根据本发明的荧光传感器的结构可以规定例如用在RFID(无线电射频识别)标签上，或者按照这种RFID标签的形式设在物体或者包装或者运输结构上。在这种情况中，扩散层的参数可毫无困难地如此设计，使得气体可直接在荧光层上存储多个小时。
例如荧光传感器集成在一个或者多个RFID标签上。用外设的读取光学设备例如以几个厘米距离读出RFID标签。
在根据本发明的荧光传感器的优选的实施方式中，扩散层的厚度在几个μm到几百μm之间，其中，根据气体扩散的期望的时间延迟来选择扩散层的厚度。
在本发明的另一改进方案中，特别优选应根据氧和/或NO2化合物或者它们的混合物来调节扩散层的渗透性，这点探测炸药化合物时对于实际的应用可能有特别的优点。
在本发明的另一改进方案中建议，对于扩散层设置三元氧化物作为陶瓷以及SU-8作为聚合物。
最后本发明的另一改进方案中，将多个不同反应的荧光层并排设置，并且被扩散层遮盖住。按照这种方式可用一个且同一个荧光传感器以期望的时间延迟按照最不同的气体组分探测出气体成分。
最后在本发明的另一改进方案中将聚合物用作承载基底，其中，卡普顿(Kapton(聚酰亚胺薄膜))、聚氨酯或者聚乙烯特别适合。但是也可使用陶瓷和硅基底。
在附图中简图地示出了根据本发明的荧光传感器的实施例。在基本呈方形的板或者条状或者带状形状的承载基底1上设置有荧光层10。这个荧光层基本上由在其中装填有荧光染料3的气体可渗透的聚合物基体2构成。直接在荧光层10上设置有其厚度为d的气体可渗透的扩散层4，这样从外界5作用到荧光层10的气体直到经过距离d穿过扩散层4扩散后才延迟地到达这个荧光层10。在荧光层10区域中的气体氛围在比较长的时间内得以保留，这是因为通过扩散层4返回到外界5的向外扩散也是延迟地发生的。在此意义上，这个扩散层4根据它的作用也可叫作保留层或者存储层。

Claims (9)

1.用于探测气体成分的荧光传感器，具有承载基底(1)和设置在该承载基底上的荧光层(10)，所述荧光层基本上由气体可渗透的在其中装填有荧光染料(3)的聚合物基体(2)构成，其特征在于，在荧光层(10)上设有由气体可渗透的陶瓷和/或聚合物构成的扩散层(4)，所述扩散层是如此适配的，使得它引起从待探测的外界(5)到荧光层(10)的气体扩散的时间延迟并且反之亦然。
2.按照权利要求1所述的荧光传感器，其特征在于，扩散层(4)的厚度(d)在几μm到几百μm之间。
3.按照权利要求2所述的荧光传感器，其特征在于，根据期望的气体扩散的时间延迟来选择扩散层(4)的厚度。
4.按照权利要求1至3所述的荧光传感器，其特征在于，优选根据氧和/或NO2化合物或者它们的混合物来调节扩散层(4)的渗透性。
5.按照权利要求1至4所述的荧光传感器，其特征在于，对于扩散层(4)设置三元氧化物作为陶瓷以及SU-8作为聚合物。
6.按照权利要求1至5所述的荧光传感器，其特征在于，多个不同反应的荧光层(10)并排设置，并且被扩散层(4)遮盖住。
7.按照权利要求1至6所述的荧光传感器，其特征在于，将聚合物用作承载基底(1)。
8.按照权利要求7所述的荧光传感器，其特征在于，选择卡普顿、PUR或PET用于承载基底(1)。
9.按照权利要求1至6所述的荧光传感器，其特征在于，承载基底(1)由硅和/或陶瓷制成。
CNA2007800199653A 2006-05-30 2007-05-08 用于探测气体成分的荧光传感器 Pending CN101454657A (zh)

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DE102006025470.8A DE102006025470B4 (de) 2006-05-30 2006-05-30 Fluoreszenzsensor zur Detektion von Gaszusammensetzungen
DE102006025470.8 2006-05-30

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BR (1) BRPI0712133A2 (zh)
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CN104458678A (zh) * 2013-09-12 2015-03-25 恩德莱斯和豪瑟尔测量及调节技术分析仪表两合公司 用于光化学或电流型传感器的测量膜
CN107796795A (zh) * 2017-10-13 2018-03-13 福州大学 用于气体检测的荧光传感器

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CN104458678A (zh) * 2013-09-12 2015-03-25 恩德莱斯和豪瑟尔测量及调节技术分析仪表两合公司 用于光化学或电流型传感器的测量膜
CN107796795A (zh) * 2017-10-13 2018-03-13 福州大学 用于气体检测的荧光传感器
CN107796795B (zh) * 2017-10-13 2019-08-09 福州大学 用于气体检测的荧光传感器

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RU2425359C2 (ru) 2011-07-27
US20100239465A1 (en) 2010-09-23
BRPI0712133A2 (pt) 2012-01-10
EP2021772A1 (de) 2009-02-11
DE102006025470A1 (de) 2007-12-06
CA2653894A1 (en) 2007-12-06
JP2009539070A (ja) 2009-11-12
RU2008150781A (ru) 2010-07-10
WO2007137550A1 (de) 2007-12-06

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