CN101451963B - 用于缺陷检测的方法和系统 - Google Patents

用于缺陷检测的方法和系统 Download PDF

Info

Publication number
CN101451963B
CN101451963B CN2007101428793A CN200710142879A CN101451963B CN 101451963 B CN101451963 B CN 101451963B CN 2007101428793 A CN2007101428793 A CN 2007101428793A CN 200710142879 A CN200710142879 A CN 200710142879A CN 101451963 B CN101451963 B CN 101451963B
Authority
CN
China
Prior art keywords
image
polarization
mask
correction function
exposure technology
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2007101428793A
Other languages
English (en)
Chinese (zh)
Other versions
CN101451963A (zh
Inventor
史密尔·曼根
鲍里斯·戈德堡
伊谢·施瓦茨班德
翁·哈伦
迈克尔·本-伊谢
阿米尔·萨吉弗
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Israel Ltd
Original Assignee
Applied Materials Israel Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Israel Ltd filed Critical Applied Materials Israel Ltd
Publication of CN101451963A publication Critical patent/CN101451963A/zh
Application granted granted Critical
Publication of CN101451963B publication Critical patent/CN101451963B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G01N2021/95676—Masks, reticles, shadow masks

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • General Health & Medical Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
CN2007101428793A 2006-08-01 2007-08-01 用于缺陷检测的方法和系统 Expired - Fee Related CN101451963B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US82105606P 2006-08-01 2006-08-01
US60/821,056 2006-08-01

Publications (2)

Publication Number Publication Date
CN101451963A CN101451963A (zh) 2009-06-10
CN101451963B true CN101451963B (zh) 2013-02-20

Family

ID=39340500

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2007101428793A Expired - Fee Related CN101451963B (zh) 2006-08-01 2007-08-01 用于缺陷检测的方法和系统

Country Status (3)

Country Link
JP (1) JP5308639B2 (https=)
KR (1) KR101235171B1 (https=)
CN (1) CN101451963B (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102253595B (zh) * 2010-05-20 2013-04-10 北大方正集团有限公司 一种查找缺陷掩膜版的方法
CN104884945A (zh) * 2012-12-27 2015-09-02 株式会社尼康 检查装置、检查方法、曝光系统及曝光方法、以及元件制造方法
TWI630453B (zh) * 2017-11-22 2018-07-21 牧德科技股份有限公司 投影式複檢機及其校正方法
US11546508B1 (en) * 2021-07-21 2023-01-03 Black Sesame Technologies Inc. Polarization imaging system with super resolution fusion
CN117055307B (zh) * 2023-10-11 2023-12-15 光科芯图(北京)科技有限公司 一种应用于掩模成像的数据处理方法、装置及曝光设备

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1401994A (zh) * 2001-08-20 2003-03-12 保谷株式会社 灰调掩模的缺陷检查方法及缺陷检查装置
US6657736B1 (en) * 1999-07-09 2003-12-02 Nova Measuring Instruments Ltd. Method and system for measuring patterned structures
US20040140418A1 (en) * 2002-06-07 2004-07-22 Jun Ye System and method for lithography process monitoring and control
JP2005354073A (ja) * 2004-06-10 2005-12-22 Asml Netherlands Bv リソグラフィ装置用のレベル・センサ
US20060066843A1 (en) * 2004-09-27 2006-03-30 Avishay Guetta Optical inspection with alternating configurations
CN1846170A (zh) * 2003-07-03 2006-10-11 恪纳腾技术公司 使用设计者意图数据检查晶片和掩模版的方法和系统
US20070058164A1 (en) * 2005-09-09 2007-03-15 Yukihiro Shibata Method and apparatus for detecting defects

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60220940A (ja) * 1983-05-20 1985-11-05 Hitachi Ltd 異物自動検査装置
JP3998334B2 (ja) 1997-09-22 2007-10-24 株式会社東芝 欠陥検査方法
JP2000206329A (ja) * 1999-01-12 2000-07-28 Toshiba Corp 位相測定方法及びその装置
JP2004061915A (ja) * 2002-07-30 2004-02-26 Nikon Corp マスク検査方法及び露光装置
JP2005026527A (ja) * 2003-07-03 2005-01-27 Sony Corp 露光方法および半導体装置の製造方法
KR101248674B1 (ko) 2004-06-16 2013-03-28 가부시키가이샤 니콘 표면 검사 장치 및 표면 검사 방법

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6657736B1 (en) * 1999-07-09 2003-12-02 Nova Measuring Instruments Ltd. Method and system for measuring patterned structures
CN1401994A (zh) * 2001-08-20 2003-03-12 保谷株式会社 灰调掩模的缺陷检查方法及缺陷检查装置
US20040140418A1 (en) * 2002-06-07 2004-07-22 Jun Ye System and method for lithography process monitoring and control
CN1846170A (zh) * 2003-07-03 2006-10-11 恪纳腾技术公司 使用设计者意图数据检查晶片和掩模版的方法和系统
JP2005354073A (ja) * 2004-06-10 2005-12-22 Asml Netherlands Bv リソグラフィ装置用のレベル・センサ
US20060066843A1 (en) * 2004-09-27 2006-03-30 Avishay Guetta Optical inspection with alternating configurations
US20070058164A1 (en) * 2005-09-09 2007-03-15 Yukihiro Shibata Method and apparatus for detecting defects

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JP特开2005354073A 2005.12.22

Also Published As

Publication number Publication date
KR101235171B1 (ko) 2013-02-20
JP2008116909A (ja) 2008-05-22
JP5308639B2 (ja) 2013-10-09
KR20080012232A (ko) 2008-02-11
CN101451963A (zh) 2009-06-10

Similar Documents

Publication Publication Date Title
US7995832B2 (en) Photomask inspection and verification by lithography image reconstruction using imaging pupil filters
US7564545B2 (en) Inspection methods and systems for lithographic masks
JP5238718B2 (ja) レチクル上のリソグラフィにおいて有意な欠陥を検出する方法
US10634623B2 (en) Phase contrast monitoring for extreme ultra-violet (EUV) masks defect inspection
KR102112901B1 (ko) 마이크로리소그래피를 위한 패턴의 자격인정
US10395361B2 (en) Apparatus and methods for inspecting reticles
TWI451513B (zh) 蝕刻顯著污染光罩缺陷之晶圓平面偵測
JP2022164702A (ja) レチクルを検査する装置および方法
TWI471552B (zh) 使用基於模型之細線方法之十字線缺陷檢測
US8572520B2 (en) Optical proximity correction for mask repair
TWI661266B (zh) 用於預測當微影製程進行時使用光罩而獲得的成像結果的方法與設備
JP2024525300A (ja) メトロロジ方法及びデバイス
US7133119B1 (en) Systems for simulating high NA and polarization effects in aerial images
CN101451963B (zh) 用于缺陷检测的方法和系统
US8213024B2 (en) Method and system for aerial imaging of a reticle
US9632430B2 (en) Lithographic system, lithographic method and device manufacturing method
US12566406B2 (en) Dark field digital holographic microscope and associated metrology method
EP4063971A1 (en) Digital holographic microscope and associated metrology method
Kamo et al. Impact of extreme ultraviolet mask absorber defect with pattern roughness on lithographic images

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20130220

Termination date: 20140801

EXPY Termination of patent right or utility model