CN101447794B - 射频发射机及在其中放大输入信号的方法 - Google Patents

射频发射机及在其中放大输入信号的方法 Download PDF

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Publication number
CN101447794B
CN101447794B CN2008101740031A CN200810174003A CN101447794B CN 101447794 B CN101447794 B CN 101447794B CN 2008101740031 A CN2008101740031 A CN 2008101740031A CN 200810174003 A CN200810174003 A CN 200810174003A CN 101447794 B CN101447794 B CN 101447794B
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CN
China
Prior art keywords
signal
sequence
radio frequency
sending set
trap
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2008101740031A
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English (en)
Chinese (zh)
Other versions
CN101447794A (zh
Inventor
F·皮维特
J·黑塞尔巴尔特
G·菲舍尔
S·查勒姆威萨特库尔
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Alcatel Lucent SAS
Nokia of America Corp
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Lucent Technologies Inc
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Publication date
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Publication of CN101447794A publication Critical patent/CN101447794A/zh
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Expired - Fee Related legal-status Critical Current
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    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04LTRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
    • H04L25/00Baseband systems
    • H04L25/02Details ; arrangements for supplying electrical power along data transmission lines
    • H04L25/03Shaping networks in transmitter or receiver, e.g. adaptive shaping networks
    • H04L25/03828Arrangements for spectral shaping; Arrangements for providing signals with specified spectral properties
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/217Class D power amplifiers; Switching amplifiers
    • H03F3/2171Class D power amplifiers; Switching amplifiers with field-effect devices
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/24Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
    • H03F3/245Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04LTRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
    • H04L27/00Modulated-carrier systems

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Amplifiers (AREA)
  • Transmitters (AREA)
  • Radar Systems Or Details Thereof (AREA)
CN2008101740031A 2007-11-12 2008-11-11 射频发射机及在其中放大输入信号的方法 Expired - Fee Related CN101447794B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP07291354.4 2007-11-12
EP07291354A EP2058993B1 (de) 2007-11-12 2007-11-12 Funkfrequenzsender

Publications (2)

Publication Number Publication Date
CN101447794A CN101447794A (zh) 2009-06-03
CN101447794B true CN101447794B (zh) 2012-06-20

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ID=39744839

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CN2008101740031A Expired - Fee Related CN101447794B (zh) 2007-11-12 2008-11-11 射频发射机及在其中放大输入信号的方法

Country Status (8)

Country Link
US (1) US20090122909A1 (de)
EP (1) EP2058993B1 (de)
JP (1) JP4960508B2 (de)
KR (1) KR101112459B1 (de)
CN (1) CN101447794B (de)
AT (1) ATE463912T1 (de)
DE (1) DE602007005814D1 (de)
WO (1) WO2009062847A1 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8364103B2 (en) * 2010-09-21 2013-01-29 Intel Mobile Communications GmbH Adaptive adjustment of active area for power amplifier
KR102087283B1 (ko) 2013-09-10 2020-03-11 이피션트 파워 컨버젼 코퍼레이션 고효율 전압 모드 클래스 d 토폴로지
DE102017108828B3 (de) * 2017-04-25 2018-07-05 Forschungsverbund Berlin E.V. Vorrichtung zur Ansteuerung eines selbstleitenden n-Kanal Endstufenfeldeffekttransistors

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0058081B1 (de) * 1981-02-09 1986-04-23 Sony Corporation Verfahren und Vorrichtung zum Codieren von Binärdaten
CN1274212A (zh) * 1999-03-18 2000-11-22 松下电器产业株式会社 空信号检测装置
CN1339198A (zh) * 1999-02-02 2002-03-06 伊利诺伊超导加拿大股份有限公司 保持存在窄带干扰的宽带系统的性能质量
WO2003021766A2 (en) * 2001-08-29 2003-03-13 Tropian Inc. Switching power supply for rf power amplifiers

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Publication number Priority date Publication date Assignee Title
US4028633A (en) * 1976-07-19 1977-06-07 The United States Of America As Represented By The Secretary Of The Navy Drive control to prevent simultaneous conduction in push-pull switching amplifier
US5021753A (en) * 1990-08-03 1991-06-04 Motorola, Inc. Splatter controlled amplifier
JPH11330094A (ja) * 1998-05-12 1999-11-30 Sumitomo Electric Ind Ltd 電界効果トランジスタ、電界効果トランジスタの製造方法、および半導体基板
US6351189B1 (en) * 2000-07-31 2002-02-26 Nokia Networks Oy System and method for auto-bias of an amplifier
US6977546B2 (en) * 2000-10-30 2005-12-20 Simon Fraser University High efficiency power amplifier systems and methods
US7158494B2 (en) * 2001-10-22 2007-01-02 Matsushita Electric Industrial Co., Ltd. Multi-mode communications transmitter
US7313199B2 (en) * 2002-03-21 2007-12-25 Hypres, Inc. Power amplifier linearization
US20060050810A1 (en) * 2004-07-29 2006-03-09 Interdigital Technology Corporation Hybrid transmitter architecture having high efficiency and large dynamic range
US7394311B2 (en) 2005-02-18 2008-07-01 Samsung Electronics Co., Ltd. Apparatus and method for reduced sample rate class S RF power amplifier
US7548112B2 (en) * 2005-07-21 2009-06-16 Cree, Inc. Switch mode power amplifier using MIS-HEMT with field plate extension
US8077795B2 (en) * 2005-10-03 2011-12-13 Telefonaktiebolaget Lm Ericsson (Publ) Apparatus and method for interference mitigation
US8149896B2 (en) * 2006-01-04 2012-04-03 Qualcomm, Incorporated Spur suppression for a receiver in a wireless communication system
US8301088B2 (en) * 2007-10-26 2012-10-30 Panasonic Corporation Polar modulation transmitter with envelope modulator path switching
US8519866B2 (en) * 2007-11-08 2013-08-27 Siemens Energy, Inc. Wireless telemetry for instrumented component
US8098782B2 (en) * 2009-02-03 2012-01-17 Harris Corporation Communications device including a filter for notching wideband receive signals and associated methods

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0058081B1 (de) * 1981-02-09 1986-04-23 Sony Corporation Verfahren und Vorrichtung zum Codieren von Binärdaten
CN1339198A (zh) * 1999-02-02 2002-03-06 伊利诺伊超导加拿大股份有限公司 保持存在窄带干扰的宽带系统的性能质量
CN1274212A (zh) * 1999-03-18 2000-11-22 松下电器产业株式会社 空信号检测装置
WO2003021766A2 (en) * 2001-08-29 2003-03-13 Tropian Inc. Switching power supply for rf power amplifiers
DE60239620D1 (de) * 2001-08-29 2011-05-12 Panasonic Corp Geschaltete spannungsversorgung für hf leistungsverstärker

Also Published As

Publication number Publication date
WO2009062847A1 (en) 2009-05-22
KR20100077016A (ko) 2010-07-06
EP2058993A1 (de) 2009-05-13
KR101112459B1 (ko) 2012-02-23
DE602007005814D1 (de) 2010-05-20
CN101447794A (zh) 2009-06-03
US20090122909A1 (en) 2009-05-14
EP2058993B1 (de) 2010-04-07
JP4960508B2 (ja) 2012-06-27
JP2011504032A (ja) 2011-01-27
ATE463912T1 (de) 2010-04-15

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