CN101442043A - Organic light coupling device - Google Patents
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- CN101442043A CN101442043A CN 200810246835 CN200810246835A CN101442043A CN 101442043 A CN101442043 A CN 101442043A CN 200810246835 CN200810246835 CN 200810246835 CN 200810246835 A CN200810246835 A CN 200810246835A CN 101442043 A CN101442043 A CN 101442043A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Abstract
The invention relates to a novel optocoupler device, which comprises an organic electroluminescent device part and an organic photosensitive diode part, wherein the organic electroluminescent device part receives a known electric signal and converts the electric signal to an optical signal; and the organic photosensitive diode part receives the optical signal transmitted by the organic electroluminescent device and converts the optical signal to a detectable electrical signal. The novel optocoupler device is characterized in that the structure of the organic photosensitive diode device comprises a buffer layer. The novel optocoupler device overcomes the defects existing in materials and structure of the prior optocoupler device, provides optocoupler consisting of full-organic semiconductor devices, has a simple preparation process, can be prepared in a large area so as to reduce cost, and can prepare full flexible optocoupler. The novel optocoupler device develops application of the optocoupler in biosimulation and medical machinery, particularly has wide application prospect in flexible and fiber intelligent fields, can be applied to intelligent military uniform, weapon and other aspects, and has more special significance.
Description
Technical field:
The present invention relates to a kind of optocoupler, particularly a kind of novel organic light-coupling device belongs to optoelectronic areas.
Background technology:
Optocoupler is a kind of opto-electronic device that can transmission signals when being generally used for electricity and isolating.It can be converted into light signal to a kind of signal, again light signal is converted into a kind of signal that can explore, general it comprise two functional parts at least, can export the functional part (input functional part) of light and be the functional part (output functional part) that is output as detectable signal with the light signal.The most frequently used optocoupler is to utilize an electroluminescent device that a signal of telecommunication is converted into light signal, utilizes a light-sensitive device again, such as photo resistance, photosensitive capacitor, photodiode or phototriode etc. light signal is converted into the signal of telecommunication.Optocoupler can be applied in the high-tension electricity isolated controlling, such as, can be loaded into the control signal of telecommunication on the light-emitting diode at low-pressure end, obtain reflecting the light signal of the signal of telecommunication, rayed is to being in the signal of telecommunication that obtains loading on the high-tension light-sensitive device on the high pressure then, and this signal of telecommunication just can be used for controlling circuit, equipment of high-pressure side etc.; Optocoupler can also be used on the optical computer, as the input and output device.
At present the optocoupler majority is made up of inorganic light-emitting device and inorganic light-sensitive device, is to be based upon the technical device of inorganic single crystal semiconductor, and not only cost is than higher, and is difficult to be integrated on the flexible substrates.
Along with developing rapidly of organic semiconducting materials, the performance of organic semiconductor device has obtained significantly improving, can compare favourably with the inorganic semiconductor device in certain limit, relevant organic semiconductor device has much commercialization in enormous quantities, such as photoconductor drum, organic LED array display device and OTFT and organic solar batteries on the photocopier that utilizes organic light-guide material.
The development of organic elctroluminescent device and organic crystal tube device makes the realization of organic optocoupler become possibility.
Summary of the invention:
The technical problem to be solved in the present invention is to propose a kind of high performance organic light-coupling device that adopts the organic photosensitive diode of new structure.
Organic light-coupling device of the present invention, its part comprises: receive the known electric signal and convert thereof into the organic electroluminescence device part of light signal, also comprise the light signal that the reception organic electroluminescence device sends and convert thereof into the organic photosensitive diode section that can detect the signal of telecommunication, comprise resilient coating in the organic photosensitive diode device structure.
Resilient coating in the organic photosensitive diode is between organic semiconducting materials and electrode.
Cushioning layer material in the machine photodiode is selected from alkali-metal nitride, alkali-metal fluoride or alkali-metal salt.Preferable material is lithium fluoride, lithium nitride, cesium carbonate, cobalt acid lithium.
The thickness of the resilient coating in the organic photosensitive diode is 0.8nm to 20nm.
The organic photosensitive diode is a heterostructure.Wherein the N type semiconductor material is selected from C
60, eight hydroxyl quinoline aluminium,
, 2,3,5,6-tetrafluoro-7,7 ', 8,8 '-four cyanogen dimethyl 1,4-benzoquinone, 4,7-diphenyl-1,10-o-phenanthroline or 1,3, and 5-three (phenyl-2-benzimidazolyl) benzene (TPBI), cis-two sulphur itrile group-two (4,4 '-dicarboxyl-2,2 '-bipyridine) ruthenium dye, the P type semiconductor material is selected from N, N '-two-(1-naphthyl)-N, N '-diphenyl-1,1-xenyl-4,4-diamines, aromatic acids dyestuff, pentacene.
In the optocoupler of this aspect, substrate of the common use of organic electroluminescence device and organic photosensitive diode component, organic electroluminescence device and organic photosensitive diode lay respectively at two faces of substrate and two device side over against, this substrate is simultaneously as the electric insulation part that connects above-mentioned two devices.
Perhaps two substrates of the common use of organic electroluminescence device and organic photosensitive diode component, organic electroluminescence device and organic photosensitive diode lay respectively in the substrate, do not have the face of function element directly to contact in two substrates.
Perhaps two substrates of the common use of organic electroluminescence device and organic photosensitive diode component, organic electroluminescence device and organic photosensitive diode lay respectively in the substrate, do not have the face of function element to link to each other by a support component in two substrates.
In the optocoupler of the present invention, after two substrates link to each other by support component, organic electroluminescence device area and light-sensitive device area over against, two substrates over against mid portion be vacuum or gas, or be transparent dielectric to the light that light-emitting diode sent.
In the optocoupler of the present invention, organic electroluminescence device and photodiode device can be flexible device, and when between two devices electric insulation layer being arranged, this electric insulation layer also is a flexible material.
Organic light-coupling device of the present invention can be applied in biosimulation field, medical machinery field, fiber intelligent field, intelligent military uniform and weapon field.
The organic optocoupler that the present invention relates to is a kind of full organic semi-conductor device that utilizes, preparation technology is simple, but large-area preparation, therefore can greatly reduce cost, can also be integrated in addition on the flexible substrates, the present invention has opened up the application of optocoupler aspect biosimulation, medical machinery, particularly in flexible and fiber intelligent field broad prospect of application is arranged, can also be applied to aspects such as intelligent military uniform, weapon, have more special meaning.
Description of drawings:
Fig. 1 is the transport stream signal journey figure of organic light-coupling device;
Fig. 2 is the organic electroluminescence device structure chart;
(a) and (b), (c) are three kinds of organic photosensitive diode structures among Fig. 3;
Among Fig. 4 (a) distribute for the current/voltage brightness curve of OLED, emission wavelength and device in the molecular structure of three kinds of materials using; (b) the OLED structural representation for encapsulating;
(a) is the structural representation and the current-voltage characteristic that has or not under the light conditions of pn junction type photodiode among Fig. 5; (b) be packaged photodiode structural representation;
Fig. 6 is the organic optocoupler structural representation after fixedly connected.
Embodiment:
The transport stream signal journey figure of organic light-coupling device of the present invention as shown in Figure 1, its preparation method is as follows:
Receiving the known electric signal and what convert thereof into light signal is a kind of organic electroluminescence device, can be a kind of electroluminous organic small molecular device, also can be a kind of organic polymer electroluminescent device, device architecture as shown in Figure 2:
Wherein 21 substrates, common substrate is a transparent substrate, can be glass or flexible substrate, flexible substrate adopts a kind of material in polyesters, the polyimides compounds, can comprise polycarbonate (PC), polyphenylene sulfide (PPS), polyether-ether-ketone (PEEK) etc.; If the OLED device from cathodoluminescence is used in preparation, its substrate can be opaque substrate, as metal, pottery, semiconductor chip etc.
22 is suprabasil anode layer, can adopt inorganic material or organic conductive polymer, inorganic material is generally the higher metals of work function such as metal oxides such as tin indium oxide (hereinafter to be referred as ITO), zinc oxide, zinc tin oxide or gold, copper, silver, the optimized ITO that is chosen as, organic conductive polymer are preferably a kind of material in polythiophene/polyvinylbenzenesulfonic acid sodium (hereinafter to be referred as PEDOT:PSS), the polyaniline (hereinafter to be referred as PANI); If want to prepare OLED device, also can use metallic film as anode material from cathodoluminescence;
The 23rd, hole injection layer, its material can adopt copper phthalocyanine (CuPc);
The 24th, hole transmission layer can adopt the arylamine class and the branch polymer same clan to hang down molecular material, is preferably N, N '-two-(1-naphthyl)-N, N '-diphenyl-1,1-xenyl-4,4-diamines (NPB);
The 25th, luminescent layer generally adopts small molecule material, can be fluorescent material, as metal organic complex, can be selected from three (oxine) aluminium (Alq
3), (the adjacent amine phenol of salicylidene)-(8-oxyquinoline) closes aluminium (III) (Al (Saph-q)) compounds, can be doped with dyestuff in this small molecule material, and doping content is the 0.01wt%～20wt% of small molecule material, dyestuff is generally aromatic condensed ring class material, as 5,6,11,12-tetraphenyl aphthacene (being called for short rubrene), the Coumarins material, as N, N '-dimethylquinacridone (being called for short DMQA), 10-(2-[4-morpholinodithio)-1,1,7,7,-tetramethyl-2,3,6,7-tetrahydrochysene-1H, 5H, 11H-benzo [1] pyrans [6,7,8-ij] quinoline piperazine (being called for short C545T), or be two pyrans class materials, as the 4-4-dicyano methylene-2-tert-butyl group-6-(1,1,7,7-tetramethyl-julolidine-9-vinyl)-4H-pyrans (being called for short DCJTB); The luminescent layer material also can adopt carbazole derivates as 4,4 '-N, and N '-two carbazoles-biphenyl (being called for short CBP), polyvinylcarbazole (PVK), but Doping Phosphorus photoinitiator dye in this material are as three (2-phenylpyridine) iridium (Ir (ppy)
3), two (2-phenylpyridine) (acetylacetone,2,4-pentanedione) iridium (Ir (ppy)
2(acac)), octaethylporphyrin platinum (PtOEP) etc.;
The 26th, the cathodic metal layer, its material generally adopts the alloy of the lower metal of work functions such as lithium, magnesium, calcium, strontium, aluminium, indium or they and copper, gold, silver, or the electrode layer that alternately forms of metal and metal fluoride, if this cathodic metal layer is prepared into enough thin, perhaps also use ITO as negative electrode, the light that organic electroluminescence device sent just can see through this layer ejaculation.
Receiving the light signal that organic electroluminescence device sends and converting thereof into what can detect the signal of telecommunication is the organic photosensitive diode.
Have multiplely in the structure of organic photosensitive diode, wherein can comprise p-n junction type photodiode, metal-organic semiconductor type photodiode and p-i-n type organic photosensitive diode etc.The characteristics of photodiode are to have one deck organic semiconductor at least among the present invention, its with the electrode that links to each other between resilient coating once.(a) and (b), (c) are three kinds of organic photosensitive diode junction compositions in the accompanying drawing 3.
Wherein (a) is p-n junction type photodiode structure principle chart, and 1 and 2 represent p type and n type organic semiconductor respectively among the figure, can use CuPc such as the p N-type semiconductor N, and the n N-type semiconductor N can be used Alq.Because spread in the n N-type semiconductor N in the how sub-hole that the p N-type semiconductor N contacts with the n N-type semiconductor N in the p N-type semiconductor N of back, the how sub-electronics in the n N-type semiconductor N spreads to the p N-type semiconductor N, thereby forms an internal electric field district, zone shown among the figure 3.When rayed is on organic semiconductor, just produce photo-generated carrier, photohole and electronic carrier the effect of built issue estranged from, float to p N-type semiconductor N and n N-type semiconductor N end respectively, form photoelectric current.If add the voltage consistent with built at the two ends of p-n junction, shown in 3a4 among the figure, photo-generated carrier will move to the extraction electrode direction (5 among the figure and 6) of diode.At n N-type semiconductor N (among the figure 2) and 6 at electrode one deck resilient coating 7 is arranged, the main purpose of this layer is to reduce n N-type semiconductor N and interelectrode potential barrier, makes contacting of organic semiconductor and metal be tending towards ohmic contact, and makes that contact resistance is as far as possible little.At p N-type semiconductor N (1 among the figure) and 5 at electrode one deck resilient coating 8 is arranged, the main purpose of this layer is to reduce p N-type semiconductor N and interelectrode potential barrier, makes contacting of organic semiconductor and metal be tending towards ohmic contact, and makes that contact resistance is as far as possible little.
Fig. 3 (b) is metal-organic semiconductor type photodiode structure chart, and 3b1 represents the organic photosensitive semiconductor, and such as pentacene, rubrene, azobenzene organic photoelectrical material etc., thickness is between 5-100nm.3b2 represents metal electrode, and material can be with Ca:Ag or Mg:Ag alloy, and its thickness is between 20-300nm.Because the work function and the organic semi-conductor work function of metal are variant, produced Schottky barrier at metal-organic semiconductor on the interface, when the illumination organic semiconductor, the photo-generated carrier of generation separates the generation interfacial potential or forms photoelectric current under the effect of potential barrier.3b3 represents extraction electrode, and material can be transparent ITO electrode or gold electrode, and its thickness is between 2-10nm.Between organic semiconductor 3b1 and extraction electrode 3b3 one deck 3b4 is arranged, this layer is a resilient coating, and main purpose is the potential barrier that reduces between semiconductor and extraction electrode, makes contacting of organic semiconductor and metal be tending towards ohmic contact, and makes that contact resistance is as far as possible little.
Fig. 3 (c) is the signal of p-i-n type organic photosensitive diode structure, and wherein 3c1 represents the p type semiconductor layer of transporting holes, and material can be used CuPc, and thickness can be between 5-100nm; 3c2 represent can transmission electronic the n N-type semiconductor N, material can be with 4,7-diphenyl-1,10-o-phenanthroline (being called for short Bphen), its thickness is between 5-100nm; 3c3 is a kind of intrinsic light-sensitive material, can be organic ruthenium metal (being called for short N3), TiOPc etc., and thickness is between 10-200nm; The energy level of 3c1,3c2,3c3 material will mate, make the photohole charge carrier to be delivered to p N-type semiconductor N material by the intrinsic photosensitive layer automatically and pass to anode again, make light induced electron to be delivered to n N-type semiconductor N material by the intrinsic photosensitive layer automatically simultaneously and pass to negative electrode again.Wherein 3c4 is that transparent or semitransparent electrode can be ITO or Mg:Ag alloy electrode, and thickness is between 2-10nm; 3c5 is the electrode of expression diode, and material can be with Ag or Au etc., and thickness is between 20-300nm.Between organic semiconductor 3c3 and extraction electrode 3c5 one deck 3c6 is arranged, this layer is a resilient coating, and main purpose is the potential barrier that reduces between semiconductor and extraction electrode, makes contacting of organic semiconductor and metal be tending towards ohmic contact, and makes that contact resistance is as far as possible little.
In organic optocoupler of the present invention, the connected mode of organic electroluminescence device and organic photosensitive diode has three kinds, a kind of is two shared same substrates of device, and two devices lay respectively at two faces of substrate, and this substrate is promptly simultaneously as the electric insulation part that connects two devices; Another kind is the top that organic electroluminescence device is positioned at the organic photosensitive diode, the electric isolating part that between two devices, has one deck to form by the printing opacity insulating material, and certainly, the substrate of organic electroluminescence device also can be simultaneously as this electric isolating part; A kind of in addition, be the top that the organic photosensitive diode is positioned at organic electroluminescence device, the electric isolating part that between two devices, has one deck to form by the printing opacity insulating material, the substrate of organic photosensitive diode also can be simultaneously as this electric isolating part certainly.When organic electroluminescence device and organic photosensitive diode all are prepared into flexible device, can also be prepared into flexible device to the electric insulation part between two devices, thereby guarantee that whole electric coupling is for flexible.
Embodiment 1:
Prepare a kind of organic light-coupling device that lumps together by display of organic electroluminescence (OLED) and organic photosensitive diode junction.The step of preparation process of this organic light-coupling device is as follows: at first prepare the OLED device on substrate of glass, then preparation organic photosensitive diode in another substrate.
The structure of OLED device is ITO/NPB (40nm)/ADN:7% DPAVBi (30nm)/BPhen (40nm)/Mg:Ag (10:1,150nm)/Ag (50nm), ADN is 9,10-two (2-naphthyl) anthracene (9,10-bis (2 '-naphthyl) anthracene), DPAVBi is 4,4 '-two [2-(4-(N, N '-di-p-tolyl) vinyl aminocarbonyl phenyl)] biphenyl (4,4 '-bis[2-(4-(N, the phenyl of N '-dipmethylphenylamino)) vinyl] biphenyl), electric current-voltage-brightness curve and the luminescent spectrum of their molecular structure and OLED figure are shown among Fig. 4 a.
Its preparation process is that tin indium oxide (ITO) conductive film of preparation layer of transparent on substrate of glass utilizes the method for photoetching that ITO is prepared into the anode of the figure of needs as OLED; After cleaning, utilize the method for vacuum evaporation, the NPB of deposition 40nm is as the injection resilient coating of holoe carrier on the ITO electrode; Utilize the method for vacuum evaporation then, the method of steaming altogether with two sources in the vacuum on NPB, formation doping AND concentration are 7% DPAVBi 30nm, the method evaporation BPhen 40nm of vacuum evaporation again, steaming Mg:Ag 150nm altogether with the ratio of 10:1 then, is the Al electrode of 50nm at last.We can encapsulate the one side for preparing, functional layer is arranged, shown in Fig. 4 b, wherein 11 be organic electroluminescence device functional layer, 10 for substrate, 12 for cap, whole like this OLED device preparation is finished.
The organic photosensitive diode can have three kinds of structure choice, and its preparation method is as described below respectively:
(a): a kind of preparation method of p-n junction type photodiode is as follows: tin indium oxide (ITO) conductive film of preparation layer of transparent on substrate of glass, utilize the method for photoetching that ITO is prepared into the negative electrode of the figure of needs as photodiode; After cleaning, utilize the method for vacuum evaporation, the C of deposition 40nm on the ITO electrode
60As the n type semiconductor layer, vapor deposition p N-type semiconductor N material N on this film again, N '-diphenyl-N, N '-bis (1-naphthyl) (1,1 '-biphenyl)-4,4 '-diamine (NPB), thickness is 80nm, deposit resilient coating LiF then on this film again, thickness is 1nm, and depositing Al film 150nm is as the anode of photodiode then.Be the structural representation of this photodiode shown in Fig. 5 a and transistorized i-v curve under light and the unglazed photograph situation is arranged.
(b): a kind of preparation method of metal-organic semiconductor type photodiode is, evaporation forms the transparent ITO electrode of skim on substrate of glass, a lead-in wire electrode as photodiode, again on this electrode vapor deposition as the LiF of resilient coating, 8nm, afterwards, deposit organic light-sensitive semiconductor material rubrene film, thickness is 50nm, and then vapor deposition constitutes the metal Ca:Ag electrode of Schottky barrier thereon, and thickness is 200nm.
(c): a kind of preparation method of p-i-n type organic photosensitive diode structure is, evaporation forms one deck Mg:Ag electrode on as the another side of the polyimides of common base, thickness is 2nm, and a lead-in wire electrode as photodiode deposits n type organic semiconductor C again on this electrode
60, thickness is 40nm, deposits organic light-sensitive material N3 again, and thickness is 100nm, deposits organic p N-type semiconductor N CuPc again, and thickness is 50nm, resilient coating LiF 1nm again, plated metal Ag or Au electrode then, thickness is 100nm.
After the preparation of organic photosensitive diode is finished, we can encapsulate the one side that functional layer is arranged, shown in Fig. 5 b, wherein 21 is that photodiode functional layer, 20 is that substrate, 22 is cap, we do not have it to be coated with on basal surface of functional layer and add a circle fixing glue, to there be the face of functional layer to merge with it in the OLED substrate then, as shown in Figure 6, wherein 31 is that fixedly glue-line, 32 is that two substrates of air dielectric transparent, insulation can be close to together, also can be at a distance of certain distance, such as 1mm.
In the present embodiment, received the known signal of telecommunication as the OLED device of optocoupler components A after, sent light to its basal surface, the organic photosensitive diode that this light signal is used as the optocoupler part B receives, and has converted thereof into the detectable signal of telecommunication then and has sent.Because the organic polymer flexible material has been used in the substrate of this organic optocoupler,, expanded the wide field of optocoupler greatly so whole optocoupler all is a flexible.
Although describe the present invention in conjunction with the preferred embodiments, but the present invention is not limited to the foregoing description, be to be understood that, claims have been summarized scope of the present invention, under the guiding of the present invention's design, it should be appreciated by one skilled in the art that the certain change to the various embodiments of the present invention scheme is carried out all will be covered by the spirit and scope of claims of the present invention.
Claims (13)
1. optocoupler, comprise the organic electroluminescence device part that receives the known electric signal and convert thereof into light signal, also comprise the light signal that the reception organic electroluminescence device sends and convert thereof into the organic photosensitive diode section that can detect the signal of telecommunication, it is characterized in that, comprise resilient coating in the described organic photosensitive diode device structure.
2. optocoupler according to claim 1 is characterized in that resilient coating in the described organic photosensitive diode is between organic semiconducting materials and electrode.
3. optocoupler according to claim 1 is characterized in that the cushioning layer material in the described organic photosensitive diode is selected from alkali-metal nitride, alkali-metal fluoride or alkali-metal salt.
4. optocoupler according to claim 3 is characterized in that described cushioning layer material is selected from lithium fluoride, lithium nitride, cesium carbonate, cobalt acid lithium.
5. optocoupler according to claim 1 and 2, the thickness that it is characterized in that the resilient coating in the described organic photosensitive diode is 0.8nm to 20nm.
6. optocoupler according to claim 1 and 2 is characterized in that described organic photosensitive diode is a heterostructure.
7. optocoupler according to claim 6 is characterized in that the N type semiconductor material is selected from C in the described organic photosensitive diode
60, eight hydroxyl quinoline aluminium, perfluor ketone phthalocyanine, perfluor pentacene, 2,3,5,6-tetrafluoro-7,7 ', 8,8 '-four cyanogen dimethyl 1,4-benzoquinone, 4,7-diphenyl-1,10-o-phenanthroline or 1,3, and 5-three (phenyl-2-benzimidazolyl) benzene, cis-two sulphur itrile group-two (4,4 '-dicarboxyl-2,2 '-bipyridine) ruthenium dye, the P type semiconductor material is selected from N, N '-two-(1-naphthyl)-N, N '-diphenyl-1,1-xenyl-4,4-diamines, aromatic acids dyestuff, pentacene.
8. optocoupler according to claim 1, it is characterized in that substrate of the common use of described organic electroluminescence device and organic photosensitive diode component, organic electroluminescence device and organic photosensitive diode lay respectively at two faces of substrate and two device side over against, this substrate is simultaneously as the electric insulation part that connects above-mentioned two devices.
9. optocoupler according to claim 1, it is characterized in that two substrates of the common use of described organic electroluminescence device and organic photosensitive diode component, organic electroluminescence device and organic photosensitive diode lay respectively in the substrate, do not have the face of function element directly to contact in two substrates.
10. optocoupler according to claim 1, it is characterized in that two substrates of the common use of described organic electroluminescence device and organic photosensitive diode component, organic electroluminescence device and organic photosensitive diode lay respectively in the substrate, do not have the face of function element to link to each other by a support component in two substrates.
11. optocoupler according to claim 10, after it is characterized in that two substrates link to each other by support component, organic electroluminescence device area and light-sensitive device area over against, two substrates over against mid portion be vacuum or gas, or be transparent dielectric to the light that light-emitting diode sent.
12. described optocoupler one of according to Claim 8-11 is characterized in that described organic electroluminescence device and photodiode device are flexible device, when between two devices electric insulation layer being arranged, this electric insulation layer also is a flexible material.
13. optocoupler according to claim 1 is in the biosimulation field, the application in medical machinery field, fiber intelligent field, intelligent military uniform or weapon field.
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101794004A (en) * | 2010-03-05 | 2010-08-04 | 中国电子科技集团公司第十三研究所 | Lens coupling photocoupler |
| CN101739909B (en) * | 2010-01-22 | 2013-02-13 | 陕西科技大学 | Organic photoelectric conversion, illumination and display system |
| CN103579282A (en) * | 2013-09-29 | 2014-02-12 | 清华大学 | Multi-channel integrated optical couplers and method for manufacturing same |
| CN103872084A (en) * | 2012-12-17 | 2014-06-18 | 环球展览公司 | Manufacturing flexible organic electronic devices |
| CN104022135A (en) * | 2014-05-19 | 2014-09-03 | 清华大学 | Optical coupler and preparation method for same |
| CN105827317A (en) * | 2016-06-03 | 2016-08-03 | 清华大学 | Visible light communication system and application |
| CN111933518A (en) * | 2020-08-18 | 2020-11-13 | 西安电子科技大学 | Based on SiC substrate and LiCoO2Preparation method of AlN single crystal material of buffer layer |
-
2008
- 2008-12-31 CN CN 200810246835 patent/CN101442043A/en active Pending
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101739909B (en) * | 2010-01-22 | 2013-02-13 | 陕西科技大学 | Organic photoelectric conversion, illumination and display system |
| CN101794004A (en) * | 2010-03-05 | 2010-08-04 | 中国电子科技集团公司第十三研究所 | Lens coupling photocoupler |
| CN103872084A (en) * | 2012-12-17 | 2014-06-18 | 环球展览公司 | Manufacturing flexible organic electronic devices |
| CN103872084B (en) * | 2012-12-17 | 2016-08-03 | 环球展览公司 | The method making flexible organic electric device |
| CN103579282A (en) * | 2013-09-29 | 2014-02-12 | 清华大学 | Multi-channel integrated optical couplers and method for manufacturing same |
| CN103579282B (en) * | 2013-09-29 | 2016-04-06 | 清华大学 | Integrated optocoupler of a kind of multichannel and preparation method thereof |
| CN104022135A (en) * | 2014-05-19 | 2014-09-03 | 清华大学 | Optical coupler and preparation method for same |
| CN104022135B (en) * | 2014-05-19 | 2017-05-03 | 清华大学 | Optical coupler and preparation method for same |
| CN105827317A (en) * | 2016-06-03 | 2016-08-03 | 清华大学 | Visible light communication system and application |
| CN111933518A (en) * | 2020-08-18 | 2020-11-13 | 西安电子科技大学 | Based on SiC substrate and LiCoO2Preparation method of AlN single crystal material of buffer layer |
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Application publication date: 20090527 |