CN104022135B - Optical coupler and preparation method for same - Google Patents
Optical coupler and preparation method for same Download PDFInfo
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- CN104022135B CN104022135B CN201410287332.2A CN201410287332A CN104022135B CN 104022135 B CN104022135 B CN 104022135B CN 201410287332 A CN201410287332 A CN 201410287332A CN 104022135 B CN104022135 B CN 104022135B
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- 238000002360 preparation method Methods 0.000 title claims description 23
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- 239000000758 substrate Substances 0.000 claims abstract description 31
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- 230000000694 effects Effects 0.000 claims abstract description 6
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- 238000009413 insulation Methods 0.000 claims description 27
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- 239000011777 magnesium Substances 0.000 claims description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 8
- 229910052802 copper Inorganic materials 0.000 claims description 8
- 239000010949 copper Substances 0.000 claims description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 8
- 229910052737 gold Inorganic materials 0.000 claims description 8
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Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Abstract
The invention discloses an optical coupler. The optical coupler comprises a substrate, and a luminous thin film group, a transparent electric insulating and isolating layer and a photosensitive thin film group, which are sequentially stacked on the substrate, wherein the photosensitive thin film group further comprises a first electrode of the photosensitive thin film group, a photosensitive functional layer and a second electrode of the photosensitive thin film group; the photosensitive functional layer comprises an organic photosensitive layer with photoelectric conduction effects or photosensitivity; and the absorption spectrum width of the photosensitive layer is more than or equal to 300nm; the color coordinates of the luminous thin film group are CIEx=0.05 to 0.7 and CIEy=0.05 to 0.7. According to the optical coupler, by the photosensitive layer with a great absorption spectrum width, the range of the color coordinates of the luminous thin film group can be widened, limitations to the selection of light sources are reduced, the transmittance of a medium is ensured, and meanwhile, the luminous intensity is also effectively enhanced, so that the effective absorption of the photosensitive thin film group over light rays emitted by the luminous thin film group is ensured, and the current transmission ratio is increased.
Description
Technical field
The present invention relates to optoelectronic areas, and in particular to a kind of optocoupler of high current transfer ratio and preparation method thereof.
Background technology
Optocoupler is a kind of opto-electronic device for being generally used for energy transmission signal during electric isolution.It can be a kind of signal
Optical signal is converted into, then optical signal is converted into the signal that another kind can be detected, typically at least include three important functions
Part：The signal of telecommunication can be converted into the functional part of light output light, can be isolated with electric insulation and with the electric insulation of transmission light
Layer and the photosensitive functional part of detectable signal is output as with optical signal as input.The most frequently used optocoupler, such as Fig. 1 institutes
Show, one signal of telecommunication is converted into optical signal using a luminescent device A, recycle a light-sensitive device B, such as photosensitive electricity
Resistance, photosensitive capacitor, light sensitive diode or phototriode etc. are converted into the signal of telecommunication optical signal, by electric insulation between A and B
Sealing coat C is electrically insulated.Optocoupler is of wide application, and such as may apply in high pressure electric isolution control, in low-pressure end handle
The control signal of telecommunication is loaded on luminescent device, obtains reflecting the optical signal of the signal of telecommunication, and then light irradiation is in high voltage potential
Light-sensitive device on obtain loading on the signal of telecommunication on high pressure, the signal of telecommunication just can be used to circuit, the equipment for controlling high-pressure side
Deng.
As emission wavelength is longer, light penetration power in media as well is stronger, therefore, optocoupler of the prior art
As use the monochromatic light such as longer wavelengths of HONGGUANG and infrared light (wavelength is 650nm-1000nm) as the light source of optocoupler.
However, HONGGUANG and infrared light supply are easily absorbed by surrounding, therefore easily cause energy loss during light is transmitted,
So as to badly influence the electric current efficiency of transmission of optocoupler.
And, also there is spectral drift in these monochromaters, result of study shows, constant in ambient temperature, drive
During streaming current increases, emission peak wavelength occurs blue-shifted phenomenon；Driving current is constant, during variation of ambient temperature,
The emission peak wavelength of the light source occurs Red Shift Phenomena；I.e. under varying environment temperature, different driving current condition, or even by
Long in use time, the emission peak wavelength of the light source can change.And the absorption of existing inorganic semiconductor light-sensitive material
Peak scope is universal narrower, so results in energy loss, so as to further drop the electric current efficiency of transmission of optocoupler.
At present, research worker has been developed over many organic semiconducting materials, although they also have wider absorption ripple
Long scope, but their absorption spectrum shows obvious maximum absorption band, i.e., and under a certain wavelength, its absorption is bright
The aobvious absorption higher than under other wavelength.The difference of absorption value under its absorption spectrum different wave length, will cause optical source wavelength to drift about
When, the change of its light sensitive effect, so as to affect the conduction of signal.Therefore, the organic semiconducting materials of wide absorption spectrum can not
Solve the above problems well.Meanwhile, in prior art, organic semiconducting materials are either still transmitted in electric charge in mobility
Aspect suffers from larger gap compared with inorganic semiconductor material, therefore, it has been recognized that using the optocoupler of organic material
The current transfer ratio of device is more much smaller than inorganic optocoupler.In view of recognizing above, at present, there is not the organic photosensitive of wide absorption spectrum
The precedent that material is obtained by optocoupler.
The content of the invention
For this purpose, the low problem of the current transfer ratio of optocoupler in prior art to be solved by this invention, so as to provide
A kind of spectral response stable with width, optocoupler of high current transfer ratio and preparation method thereof.
To solve above-mentioned technical problem, the technical solution used in the present invention is as follows：
A kind of optocoupler of the present invention, including substrate, the light-emitting film being cascading on the substrate
Group, transparent electric insulation sealing coat and photo-conductive film group, the photo-conductive film group further include the first electric of photo-conductive film group
Pole, photosensitive functional layer, the second electrode of photo-conductive film group, the photosensitive functional layer are included with photoconductive effect or heliosensitivity
Organic photosensitive layer, the absorption spectrum width of the organic photosensitive layer is more than or equal to 300nm.
The structural formula of the organic photosensitive layer material is RNH3MX3,
Wherein R is C1-C20Acyclic straight or branched hydrocarbyl, M be configuration of extra-nuclear electron be nd10(n+1)s2(n+1)p2
Metallic atom, X is the combination of one or more in halogen.
The organic photosensitive layer material is p-type, and the photosensitive functional layer also includes the first n-type semiconductor layer, described organic
Photosensitive layer is arranged near the light-emitting film group.
The photosensitive functional layer also includes the second p-type semiconductor layer and the 2nd n for being arranged on the organic photosensitive layer both sides
Type semiconductor layer, second p-type semiconductor layer are arranged near the light-emitting film group.
The light-emitting film group is at least one organic electroluminescent LED being stacked, and the light-emitting film group is entered
One step includes the first electrode of light-emitting film group, light emitting functional layer, the second electrode of light-emitting film group.
The chromaticity coordinates of the light-emitting film group is CIEx=0.05～0.7, CIEy=0.05～0.7.
The electric insulation sealing coat is fluoropolymer, polymethyl methacrylate, the one kind in polydimethylsiloxane or
The transparent membrane structure that various stackings are formed.
The light-emitting film group is identical or not with the electrode in the photo-conductive film group near the electric insulation sealing coat
Same transparency electrode.
The transparency electrode is lithium, magnesium, calcium, strontium, aluminum, indium, copper, one or more in gold, silver of alloy, or lithium, magnesium,
The electrode layer that one or more in calcium, strontium, aluminum, indium, copper, gold, silver is alternatively formed with its fluoride, or tin indium oxide, poly- thiophene
Fen/polyvinylbenzenesulfonic acid sodium, polyaniline, CNT, the one kind in Graphene.
A kind of preparation method of optocoupler of the present invention, comprises the steps：
S1, the first electrode that light-emitting film group is formed on substrate, and the second electrode pin, photosensitive of light-emitting film group
The first electrode pin of thin film group, the second electrode pin of photo-conductive film group；
S2, sequentially form in the first electrode of the light-emitting film group light emitting functional layer, light-emitting film group it is second electric
Pole, the second electrode of the light-emitting film group are electrically connected with the second electrode pin of the light-emitting film group；
S3, transparent electric insulation sealing coat is directly formed in the second electrode of the light-emitting film group；
S4, it is described electric insulation sealing coat on directly formation photo-conductive film group first electrode, the photo-conductive film group
First electrode is electrically connected with the first electrode pin of the photo-conductive film group；
S5, photosensitive functional layer is formed in the first electrode of the photo-conductive film group, the photosensitive functional layer and step S2
Described in light emitting functional layer overlap in the vertical direction of the substrate；
S6, the second of the photo-conductive film group for covering the photosensitive functional layer is directly formed in the photosensitive functional layer
Electrode, the second electrode of the photo-conductive film group are electrically connected with the second electrode pin of the photo-conductive film group.
A kind of preparation method of optocoupler of the present invention, comprises the steps：
S1, the second electrode that photo-conductive film group is formed on substrate, and the first electrode pin, luminous of photo-conductive film group
The first electrode pin of thin film group, the second electrode pin of light-emitting film group；
S2, sequentially form in the second electrode of the photo-conductive film group photosensitive functional layer, photo-conductive film group it is first electric
Pole, the first electrode of the photo-conductive film group are electrically connected with the first electrode pin of the photo-conductive film group；
S3, transparent electric insulation sealing coat is directly formed in the first electrode of the photo-conductive film group；
S4, it is described electric insulation sealing coat on directly formation light-emitting film group second electrode, the light-emitting film group
Second electrode is electrically connected with the second electrode pin of the light-emitting film group；
S5, light emitting functional layer is formed in the light-emitting film group, the institute limited in the light emitting functional layer and step S2
The photosensitive functional layer stated overlaps in the vertical direction of the substrate；
S6, the first of the light-emitting film group for covering the light emitting functional layer is directly formed in the light emitting functional layer
Electrode, the first electrode of the light-emitting film group are electrically connected with the first electrode pin of the light-emitting film group.
Also include forming encapsulated layer after step S6, the step of being packaged the optocoupler.
The above-mentioned technical proposal of the present invention has advantages below compared to existing technology：
1st, a kind of optocoupler of the present invention, including substrate, be cascading on the substrate it is luminous thin
Film group, transparent electric insulation sealing coat and photo-conductive film group, the photo-conductive film group further include the first of photo-conductive film group
Electrode, photosensitive functional layer, the second electrode of photo-conductive film group, the photosensitive functional layer are included with photoconductive effect or photosensitive
The organic photosensitive layer of property.And overcome that inorganic semiconductor material absworption peak in prior art is narrow, organic semiconducting materials are not suitable for
The technology prejudice of organic photosensitive layer in optocoupler, creative proposition are more than or equal to 300nm's using absorption spectrum width
Semi-conducting material can not only expand the chromaticity coordinates scope of the light-emitting film group, reduce to light source as organic photosensitive layer
The restriction of selection, also effectively enhances luminous intensity, while medium penetration is ensured due to the light of various wavelength in light source
Son is all available, so as to increase current transfer ratio.
2nd, a kind of optocoupler of the present invention, adopts structural formula for RNH3MX3Semi-conducting material as organic photosensitive
Layer, particularly R are C1-C20Acyclic straight or branched hydrocarbyl, M be configuration of extra-nuclear electron be nd10(n+1)s2(n+1)p2's
Metallic atom, X is the material of the combination of one or more in halogen, and absworption peak span is big, overcomes tradition inorganic half
The narrower problem in conductor absorbed peak, can absorb to the visible-range even near infrared light in part, weaken institute
Requirement of the optocoupler to light source is stated, not only colour mixture light can also be used using monochromater, so as to increase described sending out
The intensity of optical thin film group emitted light, increased the current transfer ratio of the optocoupler；And, absorption intensity is approximate, gram
The different problem of traditional organic semiconducting materials different-waveband absorption intensity is taken, even if described luminous in the optocoupler
There is wavelength shift in the light that thin film group sends, also do not result in energy loss, so as to further increase the optocoupler
Current transfer ratio.
3rd, a kind of optocoupler of the present invention, light source, isolating device and photosensitive part, using film assembly,
The volume of the optocoupler is effectively reduced, so as to increased the scope of application of the optocoupler.Meanwhile, it is described luminous thin
Film group, electric insulation sealing coat and photo-conductive film group can be prepared using organic material, can not only give its large area
And the function of flexibility, the scope of application is further increased, but also the integrated optocoupler of multichannel can be realized by photoetching technique
Preparation.
4th, a kind of preparation method of optocoupler of the present invention, light source, isolating device and photosensitive part, adopt
Film assembly preparation process is simple, with very wide application prospect.
Description of the drawings
In order that present disclosure is more likely to be clearly understood, the specific embodiment below according to the present invention is simultaneously combined
Accompanying drawing, the present invention is further detailed explanation, wherein
Fig. 1 is optocoupler principle schematic in prior art；
Fig. 2 is optocoupler structural representation described in embodiment 1；
Fig. 3 is optocoupler structural representation described in embodiment 2；
Fig. 4 is light-emitting film group structural representation；
Fig. 5 is photo-conductive film group structural representation；
Fig. 6-1～Fig. 6-8 is the preparation flow figure of optocoupler shown in Fig. 2；
Fig. 7 is the input and output current curve diagram of optocoupler described in embodiment 1；
Fig. 8 is the input and output current curve diagram of optocoupler described in embodiment 2；
Fig. 9 is the input and output current curve diagram of optocoupler described in embodiment 3；
Figure 10 is the frequency response curve of optocoupler described in embodiment 3；
Figure 11 is the input and output current curve diagram of optocoupler described in comparative example；
Figure 12 is the abosrption spectrogram of organic photosensitive layer described in embodiment 1；
Figure 13 is the abosrption spectrogram of organic photosensitive layer described in comparative example.
In figure, reference is expressed as：A- light-emitting film groups, B- photo-conductive film groups, C- electric insulation sealing coat, 1- substrates,
The first electrode of 41- light-emitting film groups, 42- light emitting functional layers, the second electrode of 43- light-emitting film groups, 431- light-emitting film groups
Second electrode pin, the first electrode of 51- photo-conductive film groups, the first electrode pin of 511- photo-conductive film groups, the photosensitive work(of 52-
Ergosphere, the second electrode of 53- photo-conductive film groups, the second electrode pin of 531- photo-conductive film groups, 6- encapsulated layers.
Specific embodiment
In order that the object, technical solutions and advantages of the present invention are clearer, below in conjunction with reality of the accompanying drawing to the present invention
The mode of applying is described in further detail.
The present invention can be embodied in many different forms, and should not be construed as limited to embodiment set forth herein.
On the contrary, there is provided these embodiments so that the disclosure will be it is thorough and complete, and will the present invention design be fully conveyed to
Those skilled in the art, the present invention will only be defined by the appended claims.In the accompanying drawings, for clarity, Ceng He areas can be exaggerated
The size and relative size in domain.It should be appreciated that when element such as layer, region or substrate are referred to as " being formed in " or " arrange
" another element " on " when, the element is can be arranged directly on another element, or can also there is intermediary element.
Conversely, when element is referred to as on " being formed directly into " or " being set directly at " another element, there is no intermediary element.
Embodiment 1
The present embodiment provides a kind of optocoupler, as shown in Figure 2, luminous including what is be cascading on substrate 1
Thin film group A, transparent electric insulation sealing coat C, photo-conductive film group B, in light-emitting film group A and photo-conductive film group B near the electricity absolutely
The electrode of edge sealing coat C is identical or different transparency electrode.
The substrate 1 can be glass substrate or polymeric substrates, the preferred flexible polyimide substrate of the present embodiment.
The preferred Organic Light Emitting Diode of light-emitting film group A, can be organic molecule luminescent device can also be poly-
Compound luminescent device, including the first electrode 41 of light-emitting film group, light emitting functional layer 42, the second electrode 43 of light-emitting film group,
As shown in figure 4, the light emitting functional layer 42 further includes organic luminous layer, and hole injection layer, hole transmission layer, electronics
The combination of one or more in implanted layer, electron transfer layer.
In the present embodiment, the light-emitting film group is including sending out on the direction of the substrate 1 from the bottom to top successively
The first electrode 41, hole injection layer of optical thin film group, hole transmission layer, luminescent layer, electron transfer layer, the second of light-emitting film group
Electrode 43.
The first electrode 41 of light-emitting film group, can adopt inorganic conductive material or organic conductive material, inorganic material one
As for work(such as metal-oxide or gold, copper, the silver such as tin indium oxide (hereinafter referred to as ITO), Zinc Oxide, zinc tin oxide, nickel alumin(i)um alloys
The higher metal of function, organic conductive material are generally polythiophene/polyvinylbenzenesulfonic acid sodium (hereinafter referred to as PEDOT：PSS)、
Polyaniline (hereinafter referred to as PANI), CNT, Graphene, the preferred chrome-nickel of the present embodiment (GrNi), thickness is 150nm.
Hole injection layer, hole transmission layer, luminescent layer material therefor and preparation method compared with technology, institute in the present embodiment
The preferred C.I. Pigment Blue 15 of hole injection layer (CuPc) is stated, thickness is 100nm；Hole transmission layer can adopt arylamine class and the branch polymer same clan
Low molecule material, preferably N,-two-(1- naphthyls)-N of N ', N '-diphenyl -1,1- xenyl -4,4- diamidogen (NPB), thickness is
20nm。
Luminescent layer can be fluorescent material or phosphor material, such as metal organic complex, may be selected from three (8-hydroxyquinolines)
Aluminum (Alq3), (salicylidene neighbour amine phenol)-(8-hydroxyquinoline) close aluminum (III) (Al (Saph-q)) class compound, this little point
In sub- material can dopant dye, 0.01wt%～20wt% of the doping content for small molecule material, dyestuff is generally aromatic condensed ring
Class material, such as Rubrene (abbreviation rubrene), such as Coumarinses material, N, N '-dimethyl quinacridine
Ketone (abbreviation DMQA), 10- (2-[4-morpholinodithio) -1,1,7,7,-tetramethyl -2,3,6,7- tetrahydrochysene -1H, 5H, 11H- benzo [1] pyrrole
Mutter [6,7,8-ij] quinoline piperazine (abbreviation C545T), or for double pyran materials, such as the 4-4- dicyano methylenes -2- tert-butyl group -6-
(1,1,7,7- tetramethyl-julolidine -9- vinyls) -4H- pyrans (abbreviation DCJTB)；Emitting layer material may also be employed carbazole
Derivant such as 4,4 '-N, N '-two carbazole-biphenyl (abbreviation CBP), polyvinylcarbazole (PVK), the phosphorescence that can adulterate in material dye
Material, such as three (2- phenylpyridines) iridium (Ir (ppy) 3), two (2- phenylpyridines) (acetylacetone,2,4-pentanedione) iridium (Ir (ppy) 2 (acac)), eight
Ethyl porphyrin platinum (PtOEP) etc.；The preferred Alq of the present embodiment3With the doped layer of C545T, wherein Alq3Doping volume ratio be
0.8%, thickness is 30nm.
, compared with technology, described in the present embodiment, electron transfer layer is excellent for the electron transfer layer material therefor and preparation method
Select Alq3Layer, thickness is 20nm.
The second electrode 43 of the light-emitting film group is typically using relatively low metals of work function such as lithium, magnesium, calcium, strontium, aluminum, indiums
Or they are with copper, the alloy of gold, silver, or the electrode layer that above-mentioned metal is alternatively formed with its fluoride, or also use ITO, institute
State the light sent by light-emitting film group A and must be transmitted through this layer and project, the preferred Ag electrodes of the present embodiment, thickness is 30nm.
The chromaticity coordinates of light-emitting film group A for (0.3,0.36).
Photo-conductive film group B described in the present embodiment, structure as shown in Figure 5, on the direction of the substrate 1 by under
The second electrode 53 of the supreme first electrode 51, photosensitive functional layer 52 and photo-conductive film group for including photo-conductive film group successively.
The photosensitive functional layer 52 includes the organic photosensitive layer with photoconductive effect or heliosensitivity, the organic photosensitive
The absorption spectrum width of layer is more than or equal to 300nm.The organic photosensitive layer material is selected from, but not limited to, perovskite material, than
Such as RNH3MX3, wherein R is C1-C20Acyclic straight or branched hydrocarbyl, M be configuration of extra-nuclear electron be nd10(n+1)s2(n+1)
p2Metallic atom, X is the combination of one or more in halogen.
The present embodiment, the photosensitive functional layer 52 comprise only machine photosensitive layer, preferred CH3NH3PbI3, thickness is 200nm,
As shown in figure 12, absworption peak wave-length coverage is 400～750nm.
The first electrode 51 of the photo-conductive film group should be transparent extraction electrode, can for lithium, magnesium, calcium, strontium, aluminum, indium,
One or more in the alloy of one or more in copper, gold, silver, or lithium, magnesium, calcium, strontium, aluminum, indium, copper, gold, silver and its fluorine
The electrode layer that compound is alternatively formed, or tin indium oxide, polythiophene/polyvinylbenzenesulfonic acid sodium, polyaniline, CNT, graphite
One kind in alkene, the preferred ITO electrode of the present embodiment, thickness is 80nm；The second electrode 53 of the photo-conductive film group can be for not
Transparent metal electrode, preferred Ag electrodes, thickness is 150nm.
The electric insulation sealing coat C is fluoropolymer, polymethyl methacrylate, the one kind in polydimethylsiloxane or
The transparent membrane structure that various stackings are formed, fluoropolymer (teflon) thin film of the present embodiment preferably clear, thickness is 300nm.
As shown in Fig. 6-1～Fig. 6-8, concrete preparation method is the preparation flow of the optocoupler：
S1, as in Figure 6-1, forms chrome-nickel conductive film on the substrate 1 by magnetron sputtering technique, utilizes
Photoetching and etching technics are prepared into it the first electrode 41 of horizontal strip light-emitting film group, and light-emitting film group is second electric
Pole pin 431, the first electrode pin 511 of photo-conductive film group, the second electrode pin 531 of photo-conductive film group.
S2, as in fig. 6-2, by vacuum evaporation process in the first electrode 41 of the light-emitting film group layer by layer deposition
Light emitting functional layer 42 in light-emitting film group A, the i.e. NPB of the C.I. Pigment Blue 15 of 100nm, 20nm, the side steamed by two sources in vacuum altogether
Method, is deposited with 30nm Alq3And C545T, and the Alq of 20nm3。
As shown in Fig. 6-3, the Ag electrodes of vacuum evaporated directly 30nm in the light emitting functional layer 42 are formed and cover described
The second electrode 43 of the light-emitting film group of shared insulated column, the second electrode 43 of light-emitting film group and the of the light-emitting film group
Two electrode pins 431 are electrically connected.
S3, as shown in Fig. 6-4, the method for vacuum evaporation deposits the transparent fluoropolymer of one layer of 300nm, and (preferred Du Pont is public
The Teflon polyflons of department's production) thin film, form the electric insulation of the second electrode 43 for covering the light-emitting film group
Sealing coat C.
S4, as shown in Fig. 6-5, by the method for magnetron sputtering on the electric insulation sealing coat C Direct precipitation 80nm
Transparent thin film, used as the first electrode 51 of photo-conductive film group, the first electrode 51 of the photo-conductive film group is photosensitive thin with described
The first electrode pin electricity 511 of film group connects.
S5, as shown in Fig. 6-6, formed in the first electrode 51 of the photo-conductive film group by wet method spin coating proceeding
CH3NH3PbI3As organic photosensitive layer, photosensitive functional layer 52 is formed.Spin coating solution is CH3NH3I and PbI2Dimethylformamide
(DMF) saturated solution, wherein CH3NH3I and PbI2Mol ratio be 1: 1.
Used as the convertible embodiment of the present invention, the organic photosensitive layer can pass through wet method spin-coating method, vacuum vapour deposition
Prepare.
The wet method spin coating proceeding can be divided into two kinds of a step spin coating and two step spin coatings.
The one step spin-coating method refers to that preparation prepares CH3NH3PbI3The solution of thin film, only carried out a step spin coating and formed thin
Film；Solution is by CH3NH3I and PbI2Mix according to a certain ratio, solvent can be in DMF or 2-propanol
Plant or two kinds of mixing.
The two steps spin-coating method is referred to and will prepare CH3NH3PbI3Bi-material needed for thin film is configured to finite concentration respectively
Solution, spin coating forms organic photosensitive layer thin film successively in two steps, such as by PbI2Be dissolved in DMF, solubility is made for 462mg/mL
Solution, with the speed spin coating 60s of 5000rpm, anneal at 80 DEG C 15min, is then immersed in concentration for 10mg/mLCH3NH3I's
In DMF solution, and the 15min that anneals at 80 DEG C, organic photosensitive layer film is obtained.
The method of vacuum evaporation can be divided into single source evaporation and double source steams two kinds altogether.
Single source evaporation is referred to and is first synthesized CH3NH3PbI3, then by the material directly with the speed of 0.1～0.5nm/s
Degree evaporation forms required thin film.
The double source steams altogether and refers to and will prepare the bi-material CH needed for perovskite thin film3NH3I and PbI2, respectively as two
Individual evaporation source, with identical evaporation rate, such as 0.1～0.5nm/s obtains the organic photosensitive layer film of certain proportioning.
S6, as shown in fig. 6-7, by vacuum evaporation process on the photosensitive unit Direct precipitation 150nm Ag electrodes,
Form the second electrode 53 of the photo-conductive film group for covering the photosensitive functional layer 52, the second electrode of the photo-conductive film group
53 are electrically connected with the second electrode pin 531 of the photo-conductive film group.
S7, as shown in figs 6-8, by magnetron sputtering technique redeposited one in the second electrode 53 of the photo-conductive film group
Used as encapsulated layer 6, at this moment, the optocoupler is prepared and is completed layer TiAlN thin film.
The optocoupler is tested, is entered the test of horizontal electrical signal using Agilent device analysis instrument, and is extracted each
The signal of telecommunication of optocoupler unit imports processing terminal and carries out data processing, and data are as shown in Figure 7.
There is extraordinary linear relationship from the input and output for scheming the visible device, current transfer ratio is up to 30-100%.
Embodiment 2
The present embodiment provides a kind of optocoupler, as shown in Figure 3, is sequentially prepared from bottom to top on substrate 1 photosensitive thin
Film group B, electric insulation sealing coat C and light-emitting film group A.Specifically preparation method is：
S1, the second electrode for directly forming photo-conductive film group using magnetron sputtering technique and mask on substrate 1, Yi Jiguang
The first electrode pin of sensitive film group, the first electrode pin of light-emitting film group, the second electrode pin of light-emitting film group；
The preferred flexible polyimide substrate of the substrate, the second electrode of the photo-conductive film group are preferably aluminium electrode, thick
Spend for 100nm.
S2, form photosensitive by wet processing or atom layer deposition process in the second electrode of the photo-conductive film group
The first electrode of functional layer, photo-conductive film group, the first electrode of the photo-conductive film group are electric with the first of the photo-conductive film group
Pole pin electrical connection.
In the present embodiment, the photosensitive functional layer further includes that the organic photosensitive layer and the first N-shaped that stack setting are partly led
Body layer, the organic photosensitive layer are arranged near the light-emitting film group.
First n-type semiconductor layer is the first n-type semiconductor layer, such as ZnO layer or TiO2Layer, can pass through existing
Wet processing in technology is prepared and can also be prepared by atom layer deposition process, the first n-type semiconductor described in the present embodiment
The ZnO layer that layer is prepared preferably by atom layer deposition process, thickness is 150nm.
The organic photosensitive layer is RNH3MX3, wherein R is C1-C20Acyclic straight or branched hydrocarbyl, M is electron outside nucleus
Arrange as nd10(n+1)s2(n+1)p2Metallic atom, X is the combination of one or more in halogen.The present embodiment is excellent
Elect CH as3NH3PbI3, thickness is 200nm, and as shown in figure 12, absworption peak wave-length coverage is 400～750nm.
The first electrode of the photo-conductive film group is preferably ITO electrode, and thickness is 60nm.
S3, transparent electric insulation sealing coat is directly formed in the first electrode of the photo-conductive film group, material therefor with
Preparation method is with embodiment 1.
S4, it is described electric insulation sealing coat on directly formation light-emitting film group second electrode, the light-emitting film group
Second electrode is electrically connected with the second electrode pin of the light-emitting film group；In the present embodiment, the second of the light-emitting film group
Electrode is preferably ITO electrode of the thickness for 80nm.
S5, light emitting functional layer is formed in the light-emitting film group, the institute limited in the light emitting functional layer and step S2
The photosensitive functional layer stated overlaps in the vertical direction of the substrate；
In the present embodiment, hole transmission layer that the light emitting functional layer includes being stacked, luminescent layer, electron transfer layer.
The hole transmission layer, the luminescent layer, the electron transfer layer material therefor and preparation method are compared with technology.This enforcement
In example, the hole transmission layer is preferably the NPB of 40nm；The luminescent layer for 30nm ADN (9,10- bis- (2- naphthyls) anthracene)/
The doped layer of DPVBi ([4,4 ' two (2,2 diphenylethyllene) 1,1 ' biphenyl), the doping volume ratio of the AND is 7%；The electricity
Sub- transport layer is preferably the BPhen (4,7- diphenyl -1,10- phenanthrolines) of 40nm.
S6, directly formed in the light emitting functional layer by magnetron sputtering technique and cover described in the light emitting functional layer
The first electrode of light-emitting film group, in the present embodiment, the first electrode of the light-emitting film group is preferably the Mg being stacked:
Al/Ag layers, Mg: Al layer are deposited with 10: 1 mass ratio, and thickness is 150nm, and the thickness of Ag layers is 50nm, the light-emitting film group
First electrode electrically connect with the first electrode pin of the light-emitting film group.
In the present embodiment, the chromaticity coordinates of the light-emitting film group for (0.15,0.08).
S7, by magnetron sputtering technique, in the second electrode 53 of the photo-conductive film group, redeposited one layer of TiAlN thin film is made
For encapsulated layer 6, at this moment, the optocoupler is prepared and is completed.
The optocoupler is tested, is entered the test of horizontal electrical signal using Agilent device analysis instrument, and is extracted each
The signal of telecommunication of optocoupler unit imports processing terminal and carries out data processing, and data are as shown in Figure 8.
There is extraordinary linear relationship from the input and output for scheming the visible device, current transfer ratio is up to 30-100%.
Embodiment 3
The present embodiment provides a kind of optocoupler, concrete structure with preparation method with embodiment 2, it is unique unlike this reality
Apply in example, the photosensitive functional layer further includes the second p-type semiconductor layer for being arranged on the organic photosensitive layer both sides and
Two n-type semiconductor layers, second p-type semiconductor layer are arranged near the light-emitting film group.
Second n-type semiconductor layer is n-type semiconductor layer, is selected from, but not limited to, TiO2, ZnO etc. there is larger electricity
The inorganic semiconductor material of transport factor, the present embodiment are preferably TiO2Layer, thickness is 150nm.
Second p-type semiconductor layer is p-type semiconductor material layer, is selected from, but not limited to, organic semiconducting materials poly- three fragrant
Base amine (PTAA), 2,2 ', 7,7 '-four bromo- 9,9 '-spiral shell two, three (4- iodobenzenes) amine (Spiro-MeOTAD), the present embodiment is preferably
Spiro-MeOTAD, thickness are 40nm.
The optocoupler is tested, is entered the test of horizontal electrical signal using Agilent device analysis instrument, and is extracted each
The signal of telecommunication of optocoupler unit imports processing terminal and carries out data processing, and data are as shown in Figures 9 and 10.
There is extraordinary linear relationship from the input and output for scheming the visible device, and under high-frequency input signal
Still there is the signal output for extremely matching, current transfer ratio is up to 50-100%.
Comparative example
This comparative example provides a kind of optocoupler, and concrete structure and preparation method are with embodiment 1, unique except for the difference that organic
Photosensitive layer material is different, is Benzpyrole squaric acid cyanine dye, and as shown in figure 13, absworption peak wave-length coverage is 600-700nm to absorption spectrum.
The optocoupler is tested, is entered the test of horizontal electrical signal using Agilent device analysis instrument, and is extracted each
The signal of telecommunication of optocoupler unit imports processing terminal and carries out data processing, and data are as shown in figure 11.
Also there is certain linear relationship from the input and output for scheming the visible device, but, the maximum of current transfer ratio
Value is only 2%, far below the data in embodiment 1-3.
Obviously, above-described embodiment is only intended to clearly illustrate example, and the not restriction to embodiment.It is right
For those of ordinary skill in the art, can also make on the basis of the above description other multi-forms change or
Change.There is no need to be exhaustive to all of embodiment.And thus it is extended obvious change or
Among changing still in protection scope of the present invention.
Claims (11)
1. a kind of optocoupler, including substrate, the light-emitting film group being cascading on the substrate, transparent electric insulation
Sealing coat and photo-conductive film group, it is characterised in that the photo-conductive film group further includes the first electrode of photo-conductive film group, light
The second electrode of quick functional layer, photo-conductive film group, the photosensitive functional layer include having with photoconductive effect or heliosensitivity
Machine photosensitive layer, the absorption spectrum width of the organic photosensitive layer are more than or equal to 300nm；The structure of the organic photosensitive layer material
Formula is RNH3MX3,
Wherein R is C1-C20Acyclic straight or branched hydrocarbyl, M be configuration of extra-nuclear electron be nd10(n+1)s2(n+1)p2Gold
Category atom, X is the combination of one or more in halogen.
2. optocoupler according to claim 1, it is characterised in that the organic photosensitive layer material is p-type, described photosensitive
Functional layer also includes the first n-type semiconductor layer, and the organic photosensitive layer is arranged near the light-emitting film group.
3. optocoupler according to claim 2, it is characterised in that the photosensitive functional layer also includes being arranged on described to be had
Second p-type semiconductor layer and the second n-type semiconductor layer of machine photosensitive layer both sides, second p-type semiconductor layer is near described
Optical thin film group is arranged.
4. the optocoupler according to any one of claim 1-3, it is characterised in that the light-emitting film group is at least one
The organic electroluminescent LED being stacked, the light-emitting film group further include the first electrode of light-emitting film group, send out
The second electrode of light functional layer, light-emitting film group.
5. optocoupler according to claim 4, it is characterised in that the chromaticity coordinates of the light-emitting film group is CIEx=
0.05～0.7, CIEy=0.05～0.7.
6. optocoupler according to claim 1, it is characterised in that the electric insulation sealing coat is fluoropolymer, poly- first
The transparent membrane structure that one or more stacking in base acrylic acid methyl ester., polydimethylsiloxane is formed.
7. optocoupler according to claim 1, it is characterised in that in the light-emitting film group and the photo-conductive film group
Electrode near the electric insulation sealing coat is identical or different transparency electrode.
8. the optocoupler according to claim 1-3 or any one of 5-7, it is characterised in that the transparency electrode be lithium,
In the alloy of one or more in magnesium, calcium, strontium, aluminum, indium, copper, gold, silver, or lithium, magnesium, calcium, strontium, aluminum, indium, copper, gold, silver
The electrode layer being alternatively formed with its fluoride for one or more, or tin indium oxide, polythiophene/polyvinylbenzenesulfonic acid sodium, polyphenyl
One kind in amine, CNT, Graphene.
9. the preparation method of the optocoupler described in a kind of any one of claim 1-8, it is characterised in that comprise the steps：
S1, the first electrode that light-emitting film group is formed on substrate, and second electrode pin, the photo-conductive film of light-emitting film group
The first electrode pin of group, the second electrode pin of photo-conductive film group；
S2, the second electrode that light emitting functional layer, light-emitting film group are sequentially formed in the first electrode of the light-emitting film group, institute
The second electrode for stating light-emitting film group is electrically connected with the second electrode pin of the light-emitting film group；
S3, transparent electric insulation sealing coat is directly formed in the second electrode of the light-emitting film group；
S4, it is described electric insulation sealing coat on directly formation photo-conductive film group first electrode, the first of the photo-conductive film group
Electrode is electrically connected with the first electrode pin of the photo-conductive film group；
S5, photosensitive functional layer is formed in the first electrode of the photo-conductive film group, the photosensitive functional layer and institute in step S2
The light emitting functional layer stated overlaps in the vertical direction of the substrate；
S6, the second electric of the photo-conductive film group for covering the photosensitive functional layer is directly formed in the photosensitive functional layer
Pole, the second electrode of the photo-conductive film group are electrically connected with the second electrode pin of the photo-conductive film group.
10. the preparation method of the optocoupler described in a kind of any one of claim 1-8, it is characterised in that comprise the steps：
S1, the second electrode that photo-conductive film group is formed on substrate, and first electrode pin, the light-emitting film of photo-conductive film group
The first electrode pin of group, the second electrode pin of light-emitting film group；
S2, the first electrode that photosensitive functional layer, photo-conductive film group are sequentially formed in the second electrode of the photo-conductive film group, institute
The first electrode for stating photo-conductive film group is electrically connected with the first electrode pin of the photo-conductive film group；
S3, transparent electric insulation sealing coat is directly formed in the first electrode of the photo-conductive film group；
S4, it is described electric insulation sealing coat on directly formation light-emitting film group second electrode, the second of the light-emitting film group
Electrode is electrically connected with the second electrode pin of the light-emitting film group；
S5, light emitting functional layer is formed in the light-emitting film group, what is limited in the light emitting functional layer and step S2 is described
Photosensitive functional layer overlaps in the vertical direction of the substrate；
S6, the first electric of the light-emitting film group for covering the light emitting functional layer is directly formed in the light emitting functional layer
Pole, the first electrode of the light-emitting film group are electrically connected with the first electrode pin of the light-emitting film group.
The preparation method of 11. optocouplers according to claim 9 or 10, it is characterised in that also include after step S6
Encapsulated layer is formed, the step of being packaged to the optocoupler.
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| CN103579282A (en) * | 2013-09-29 | 2014-02-12 | 清华大学 | Multi-channel integrated optical couplers and method for manufacturing same |
| CN103700769A (en) * | 2013-12-03 | 2014-04-02 | 常州大学 | Organic/inorganic hybridized perovskite solar battery and preparation method thereof |
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