CN104022135A - Optical coupler and preparation method for same - Google Patents
Optical coupler and preparation method for same Download PDFInfo
- Publication number
- CN104022135A CN104022135A CN201410287332.2A CN201410287332A CN104022135A CN 104022135 A CN104022135 A CN 104022135A CN 201410287332 A CN201410287332 A CN 201410287332A CN 104022135 A CN104022135 A CN 104022135A
- Authority
- CN
- China
- Prior art keywords
- film group
- electrode
- light
- photo
- conductive film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000002360 preparation method Methods 0.000 title claims description 28
- 230000003287 optical effect Effects 0.000 title abstract description 5
- 239000010410 layer Substances 0.000 claims abstract description 110
- 239000002346 layers by function Substances 0.000 claims abstract description 58
- 239000000758 substrate Substances 0.000 claims abstract description 31
- 238000000862 absorption spectrum Methods 0.000 claims abstract description 11
- 230000000694 effects Effects 0.000 claims abstract description 6
- 239000000463 material Substances 0.000 claims description 34
- 239000004065 semiconductor Substances 0.000 claims description 32
- 238000009413 insulation Methods 0.000 claims description 27
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 9
- 239000004411 aluminium Substances 0.000 claims description 9
- 229910052782 aluminium Inorganic materials 0.000 claims description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 9
- 229910052802 copper Inorganic materials 0.000 claims description 9
- 239000010949 copper Substances 0.000 claims description 9
- 239000011777 magnesium Substances 0.000 claims description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 8
- 230000015572 biosynthetic process Effects 0.000 claims description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 8
- 229910052737 gold Inorganic materials 0.000 claims description 8
- 239000010931 gold Substances 0.000 claims description 8
- 229910052709 silver Inorganic materials 0.000 claims description 8
- 239000004332 silver Substances 0.000 claims description 8
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 7
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims description 7
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 7
- 229910052791 calcium Inorganic materials 0.000 claims description 7
- 239000011575 calcium Substances 0.000 claims description 7
- 229910052738 indium Inorganic materials 0.000 claims description 7
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 7
- 229910052744 lithium Inorganic materials 0.000 claims description 7
- 229910052749 magnesium Inorganic materials 0.000 claims description 7
- 229910052712 strontium Inorganic materials 0.000 claims description 7
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 claims description 7
- 125000000217 alkyl group Chemical group 0.000 claims description 5
- 229920002313 fluoropolymer Polymers 0.000 claims description 5
- 239000004811 fluoropolymer Substances 0.000 claims description 5
- 229910052736 halogen Inorganic materials 0.000 claims description 5
- 150000002367 halogens Chemical class 0.000 claims description 5
- 229920000767 polyaniline Polymers 0.000 claims description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims description 4
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 4
- 206010034960 Photophobia Diseases 0.000 claims description 4
- 239000002253 acid Substances 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 4
- 239000002041 carbon nanotube Substances 0.000 claims description 4
- 229910021393 carbon nanotube Inorganic materials 0.000 claims description 4
- 229910021389 graphene Inorganic materials 0.000 claims description 4
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 claims description 4
- 208000013469 light sensitivity Diseases 0.000 claims description 4
- 239000012528 membrane Substances 0.000 claims description 4
- 229920000123 polythiophene Polymers 0.000 claims description 4
- 239000011734 sodium Substances 0.000 claims description 4
- 229910052708 sodium Inorganic materials 0.000 claims description 4
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 claims description 3
- 210000004276 hyalin Anatomy 0.000 claims description 3
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 3
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 3
- 229920005573 silicon-containing polymer Polymers 0.000 claims description 3
- 230000005540 biological transmission Effects 0.000 abstract description 11
- 239000010409 thin film Substances 0.000 abstract description 10
- 238000010521 absorption reaction Methods 0.000 abstract description 7
- 206010034972 Photosensitivity reaction Diseases 0.000 abstract 1
- 230000036211 photosensitivity Effects 0.000 abstract 1
- 238000002834 transmittance Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 144
- 238000000034 method Methods 0.000 description 22
- 238000004528 spin coating Methods 0.000 description 11
- 238000012546 transfer Methods 0.000 description 11
- ZMXDDKWLCZADIW-UHFFFAOYSA-N dimethylformamide Substances CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 10
- 238000012545 processing Methods 0.000 description 10
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 8
- 239000000243 solution Substances 0.000 description 8
- 238000001704 evaporation Methods 0.000 description 7
- 230000008020 evaporation Effects 0.000 description 7
- 230000027756 respiratory electron transport chain Effects 0.000 description 7
- 238000001755 magnetron sputter deposition Methods 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 238000007738 vacuum evaporation Methods 0.000 description 5
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000000975 dye Substances 0.000 description 4
- 230000005611 electricity Effects 0.000 description 4
- 239000000284 extract Substances 0.000 description 4
- 230000008676 import Effects 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 239000011787 zinc oxide Substances 0.000 description 4
- VQGHOUODWALEFC-UHFFFAOYSA-N 2-phenylpyridine Chemical compound C1=CC=CC=C1C1=CC=CC=N1 VQGHOUODWALEFC-UHFFFAOYSA-N 0.000 description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 229910010413 TiO 2 Inorganic materials 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 3
- XDXWNHPWWKGTKO-UHFFFAOYSA-N 207739-72-8 Chemical compound C1=CC(OC)=CC=C1N(C=1C=C2C3(C4=CC(=CC=C4C2=CC=1)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)C1=CC(=CC=C1C1=CC=C(C=C13)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)C1=CC=C(OC)C=C1 XDXWNHPWWKGTKO-UHFFFAOYSA-N 0.000 description 2
- DHDHJYNTEFLIHY-UHFFFAOYSA-N 4,7-diphenyl-1,10-phenanthroline Chemical compound C1=CC=CC=C1C1=CC=NC2=C1C=CC1=C(C=3C=CC=CC=3)C=CN=C21 DHDHJYNTEFLIHY-UHFFFAOYSA-N 0.000 description 2
- SCZWJXTUYYSKGF-UHFFFAOYSA-N 5,12-dimethylquinolino[2,3-b]acridine-7,14-dione Chemical compound CN1C2=CC=CC=C2C(=O)C2=C1C=C1C(=O)C3=CC=CC=C3N(C)C1=C2 SCZWJXTUYYSKGF-UHFFFAOYSA-N 0.000 description 2
- UJOBWOGCFQCDNV-UHFFFAOYSA-N 9H-carbazole Chemical compound C1=CC=C2C3=CC=CC=C3NC2=C1 UJOBWOGCFQCDNV-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 239000004809 Teflon Substances 0.000 description 2
- 229920006362 Teflon® Polymers 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 150000001412 amines Chemical group 0.000 description 2
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical group C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 150000004880 oxines Chemical class 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 150000003384 small molecules Chemical class 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- QGKMIGUHVLGJBR-UHFFFAOYSA-M (4z)-1-(3-methylbutyl)-4-[[1-(3-methylbutyl)quinolin-1-ium-4-yl]methylidene]quinoline;iodide Chemical compound [I-].C12=CC=CC=C2N(CCC(C)C)C=CC1=CC1=CC=[N+](CCC(C)C)C2=CC=CC=C12 QGKMIGUHVLGJBR-UHFFFAOYSA-M 0.000 description 1
- IWZZBBJTIUYDPZ-DVACKJPTSA-N (z)-4-hydroxypent-3-en-2-one;iridium;2-phenylpyridine Chemical compound [Ir].C\C(O)=C\C(C)=O.[C-]1=CC=CC=C1C1=CC=CC=N1.[C-]1=CC=CC=C1C1=CC=CC=N1 IWZZBBJTIUYDPZ-DVACKJPTSA-N 0.000 description 1
- UHXOHPVVEHBKKT-UHFFFAOYSA-N 1-(2,2-diphenylethenyl)-4-[4-(2,2-diphenylethenyl)phenyl]benzene Chemical compound C=1C=C(C=2C=CC(C=C(C=3C=CC=CC=3)C=3C=CC=CC=3)=CC=2)C=CC=1C=C(C=1C=CC=CC=1)C1=CC=CC=C1 UHXOHPVVEHBKKT-UHFFFAOYSA-N 0.000 description 1
- -1 12-tetraphenyl Chemical group 0.000 description 1
- VFMUXPQZKOKPOF-UHFFFAOYSA-N 2,3,7,8,12,13,17,18-octaethyl-21,23-dihydroporphyrin platinum Chemical compound [Pt].CCc1c(CC)c2cc3[nH]c(cc4nc(cc5[nH]c(cc1n2)c(CC)c5CC)c(CC)c4CC)c(CC)c3CC VFMUXPQZKOKPOF-UHFFFAOYSA-N 0.000 description 1
- HXWWMGJBPGRWRS-CMDGGOBGSA-N 4- -2-tert-butyl-6- -4h-pyran Chemical compound O1C(C(C)(C)C)=CC(=C(C#N)C#N)C=C1\C=C\C1=CC(C(CCN2CCC3(C)C)(C)C)=C2C3=C1 HXWWMGJBPGRWRS-CMDGGOBGSA-N 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 229920000144 PEDOT:PSS Polymers 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 229920006361 Polyflon Polymers 0.000 description 1
- REDXJYDRNCIFBQ-UHFFFAOYSA-N aluminium(3+) Chemical compound [Al+3] REDXJYDRNCIFBQ-UHFFFAOYSA-N 0.000 description 1
- 150000004982 aromatic amines Chemical class 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- ZYGHJZDHTFUPRJ-UHFFFAOYSA-N benzo-alpha-pyrone Natural products C1=CC=C2OC(=O)C=CC2=C1 ZYGHJZDHTFUPRJ-UHFFFAOYSA-N 0.000 description 1
- 235000010290 biphenyl Nutrition 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- XCJYREBRNVKWGJ-UHFFFAOYSA-N copper(II) phthalocyanine Chemical compound [Cu+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 XCJYREBRNVKWGJ-UHFFFAOYSA-N 0.000 description 1
- 235000001671 coumarin Nutrition 0.000 description 1
- 150000004775 coumarins Chemical class 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 1
- 150000002475 indoles Chemical class 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- SNHMUERNLJLMHN-UHFFFAOYSA-N iodobenzene Chemical compound IC1=CC=CC=C1 SNHMUERNLJLMHN-UHFFFAOYSA-N 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- RTRAMYYYHJZWQK-UHFFFAOYSA-N iridium;2-phenylpyridine Chemical compound [Ir].C1=CC=CC=C1C1=CC=CC=N1 RTRAMYYYHJZWQK-UHFFFAOYSA-N 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- KYKLWYKWCAYAJY-UHFFFAOYSA-N oxotin;zinc Chemical compound [Zn].[Sn]=O KYKLWYKWCAYAJY-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 1
- HJEYCIXFDZNPMJ-UHFFFAOYSA-N piperazine;quinoline Chemical compound C1CNCCN1.N1=CC=CC2=CC=CC=C21 HJEYCIXFDZNPMJ-UHFFFAOYSA-N 0.000 description 1
- MCJGNVYPOGVAJF-UHFFFAOYSA-N quinolin-8-ol Chemical compound C1=CN=C2C(O)=CC=CC2=C1 MCJGNVYPOGVAJF-UHFFFAOYSA-N 0.000 description 1
- YYMBJDOZVAITBP-UHFFFAOYSA-N rubrene Chemical compound C1=CC=CC=C1C(C1=C(C=2C=CC=CC=2)C2=CC=CC=C2C(C=2C=CC=CC=2)=C11)=C(C=CC=C2)C2=C1C1=CC=CC=C1 YYMBJDOZVAITBP-UHFFFAOYSA-N 0.000 description 1
- 239000012047 saturated solution Substances 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 125000005259 triarylamine group Chemical group 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Abstract
The invention discloses an optical coupler. The optical coupler comprises a substrate, and a luminous thin film group, a transparent electric insulating and isolating layer and a photosensitive thin film group, which are sequentially stacked on the substrate, wherein the photosensitive thin film group further comprises a first electrode of the photosensitive thin film group, a photosensitive functional layer and a second electrode of the photosensitive thin film group; the photosensitive functional layer comprises an organic photosensitive layer with photoelectric conduction effects or photosensitivity; and the absorption spectrum width of the photosensitive layer is more than or equal to 300nm; the color coordinates of the luminous thin film group are CIEx=0.05 to 0.7 and CIEy=0.05 to 0.7. According to the optical coupler, by the photosensitive layer with a great absorption spectrum width, the range of the color coordinates of the luminous thin film group can be widened, limitations to the selection of light sources are reduced, the transmittance of a medium is ensured, and meanwhile, the luminous intensity is also effectively enhanced, so that the effective absorption of the photosensitive thin film group over light rays emitted by the luminous thin film group is ensured, and the current transmission ratio is increased.
Description
Technical field
The present invention relates to optoelectronic areas, be specifically related to optocoupler of a kind of high current transfer ratio and preparation method thereof.
Background technology
Optocoupler is a kind of opto-electronic device that when isolation electricity can signal transmission that is generally used for.It can be converted into light signal a kind of signal, again light signal is converted into the signal that another kind can be surveyed, generally at least comprises three important functional parts: the signal of telecommunication can be converted into light and export light functional part, there is electric insulation and electric insulation separator that can transmission light and taking light signal as being output as the photosensitive functional part of detectable signal.The most frequently used optocoupler, as shown in Figure 1, utilize a luminescent device A that a signal of telecommunication is converted into light signal, recycle a light-sensitive device B, such as photo resistance, photosensitive capacitor, photodiode or phototriode etc. are converted into the signal of telecommunication light signal, between A and B, isolate by electric insulation separator C electricity.Optocoupler is of wide application, such as being applied in high-tension electricity isolated controlling, be loaded on luminescent device controlling the signal of telecommunication at low-pressure end, obtain reflecting the light signal of the signal of telecommunication, then irradiation obtains loading on the signal of telecommunication on high pressure to the light-sensitive device in high voltage potential, and this signal of telecommunication just can be used for controlling circuit, the equipment etc. of high-pressure side.
Because emission wavelength is longer, the penetration power of light in medium is stronger, and therefore, optocoupler of the prior art generally uses the monochromatic light such as ruddiness and infrared light (wavelength is 650nm-1000nm) that wavelength the grows light source as optocoupler.But ruddiness and infrared light supply are easily absorbed by surrounding environment, therefore in the process of light transmission, very easily cause energy loss, thereby badly influence the current delivery efficiency of optocoupler.
And these monochromatic sources also exist the problem of spectral drift, result of study shows, constant in ambient temperature, in drive current increase process, emission peak wavelength there will be blue-shifted phenomenon; In, variation of ambient temperature process constant at drive current, the emission peak wavelength of described light source there will be Red Shift Phenomena; Under varying environment temperature, different driving current condition, even because service time is long, the emission peak wavelength of described light source can change.And the absworption peak scope of existing inorganic semiconductor light-sensitive material is generally narrower, so just causes energy loss, thereby further fallen the current delivery efficiency of optocoupler.
At present, researcher has developed many organic semiconducting materials, although they also have wider absorbing wavelength scope, their absorption spectrum shows obvious maximum absorption band, and under a certain wavelength, its absorption will be apparently higher than the absorption under other wavelength.The difference of absorption value under its absorption spectrum different wave length, will cause optical source wavelength when drift, the change of its light sensitive effect, thus affect the conduction of signal.Therefore, the organic semiconducting materials of wide absorption spectrum can not address the above problem well.Simultaneously, in prior art, organic semiconducting materials is regardless of being in mobility or having larger gap aspect electric charge transmission compared with inorganic semiconductor material, therefore, people generally believe that the current transfer ratio of the optocoupler that uses organic material is more much smaller than inorganic optocoupler.In view of above understanding, at present, there is not the organic photosensitive material of wide absorption spectrum in optocoupler, to obtain the precedent of utilizing.
Summary of the invention
For this reason, the low problem of the current transfer ratio of optocoupler in prior art to be solved by this invention, thus a kind of optocoupler with wide and stable spectral response, high current transfer ratio and preparation method thereof is provided.
For solving the problems of the technologies described above, the technical solution used in the present invention is as follows:
A kind of optocoupler of the present invention, the light-emitting film group that comprises substrate, be cascading on described substrate, transparent electric insulation separator and photo-conductive film group, described photo-conductive film group further comprises the second electrode of the first electrode of photo-conductive film group, photosensitive functional layer, photo-conductive film group, described photosensitive functional layer comprises the organic photosensitive layer with photoconductive effect or light sensitivity, and the absorption spectrum width of described photosensitive layer is more than or equal to 300nm.
The structural formula of described photosensitive layer material is RNH
3mX
3,
Wherein R is C
1-C
20aliphat straight or branched alkyl, M is that configuration of extra-nuclear electron is nd
10(n+1) s
2(n+1) p
2metallic atom, X is one or more the combination in halogen.
Described photosensitive layer material is p-type, and described photosensitive functional layer also comprises the first N-shaped semiconductor layer, and described photosensitive layer arranges near described light-emitting film group.
Described photosensitive functional layer also comprises the second p-type semiconductor layer and the second N-shaped semiconductor layer that are arranged on described photosensitive layer both sides, and described the second p-type semiconductor layer arranges near described light-emitting film group.
The organic electroluminescent LED that described light-emitting film group is at least one stacked setting, described light-emitting film group further comprises the first electrode, the light emitting functional layer of light-emitting film group, the second electrode of light-emitting film group.
The chromaticity coordinates of described light-emitting film group is CIEx=0.05～0.7, CIEy=0.05～0.7.
Described electric insulation separator is the hyaline membrane structure of one or more the stacking formation in fluoropolymer, polymethyl methacrylate, dimethyl silicone polymer.
Electrode near described electric insulation separator in described light-emitting film group and described photo-conductive film group is identical or different transparency electrode.
Described transparency electrode is one or more the alloy in lithium, magnesium, calcium, strontium, aluminium, indium, copper, gold, silver, or the electrode layer that alternately forms of one or more and its fluoride in lithium, magnesium, calcium, strontium, aluminium, indium, copper, gold, silver, or one in tin indium oxide, polythiophene/polyvinylbenzenesulfonic acid sodium, polyaniline, carbon nano-tube, Graphene.
The preparation method of a kind of optocoupler of the present invention, comprises the steps:
S1, on substrate, form the first electrode of light-emitting film group, and the second electrode pin of light-emitting film group, the first electrode pin of photo-conductive film group, the second electrode pin of photo-conductive film group;
S2, on the first electrode of described light-emitting film group, form successively the second electrode of light emitting functional layer, light-emitting film group, the second electrode of described light-emitting film group is electrically connected with the second electrode pin of described light-emitting film group;
S3, on the second electrode of described light-emitting film group, directly form transparent electric insulation separator;
S4, on described electric insulation separator, directly form the first electrode of photo-conductive film group, the first electrode of described photo-conductive film group is electrically connected with the first electrode pin of described photo-conductive film group;
S5, on the first electrode of described photo-conductive film group, form photosensitive functional layer, described photosensitive functional layer overlaps in the vertical direction of described substrate with the light emitting functional layer described in step S2;
S6, in described photosensitive functional layer, directly form the second electrode of described photo-conductive film group that covers described photosensitive functional layer, the second electrode of described photo-conductive film group is electrically connected with the second electrode pin of described photo-conductive film group.
The preparation method of a kind of optocoupler of the present invention, comprises the steps:
S1, on substrate, form the second electrode of photo-conductive film group, and the first electrode pin of photo-conductive film group, the first electrode pin of light-emitting film group, the second electrode pin of light-emitting film group;
S2, on the second electrode of described photo-conductive film group, form successively the first electrode of photosensitive functional layer, photo-conductive film group, the first electrode of described photo-conductive film group is electrically connected with the first electrode pin of described photo-conductive film group;
S3, on the first electrode of described photo-conductive film group, directly form transparent electric insulation separator;
S4, on described electric insulation separator, directly form the second electrode of light-emitting film group, the second electrode of described light-emitting film group is electrically connected with the second electrode pin of described light-emitting film group;
S5, in described light-emitting film group, form light emitting functional layer, described light emitting functional layer overlaps in the vertical direction of described substrate with the described photosensitive functional layer limiting in step S2;
S6, in described light emitting functional layer, directly form the first electrode of described light-emitting film group that covers described light emitting functional layer, the first electrode of described light-emitting film group is electrically connected with the first electrode pin of described light-emitting film group.
After step S6, also comprise formation encapsulated layer, the step that described optocoupler is encapsulated.
Technique scheme of the present invention has the following advantages compared to existing technology:
1, a kind of optocoupler of the present invention, the light-emitting film group that comprises substrate, be cascading on described substrate, transparent electric insulation separator and photo-conductive film group, described photo-conductive film group further comprises the second electrode of the first electrode of photo-conductive film group, photosensitive functional layer, photo-conductive film group, and described photosensitive functional layer comprises the photosensitive layer with photoconductive effect or light sensitivity.And overcome the technology prejudice that in prior art, inorganic semiconductor material absworption peak is narrow, organic semiconducting materials is not suitable for photosensitive layer in optocoupler, the semi-conducting material that creationary proposition employing absorption spectrum width is more than or equal to 300nm is as photosensitive layer, not only can expand the chromaticity coordinates scope of described light-emitting film group, reduce the restriction that light source is selected, in ensureing medium penetration, also effectively strengthen luminous intensity, because the photon of various wavelength in light source all can utilize, thereby increase current transfer ratio.
2, a kind of optocoupler of the present invention, employing structural formula is RNH
3mX
3semi-conducting material as photosensitive layer, particularly R is C
1-C
20aliphat straight or branched alkyl, M is that configuration of extra-nuclear electron is nd
10(n+1) s
2(n+1) p
2metallic atom, X is one or more the material of combination in halogen, absworption peak span is large, overcome the narrower problem of traditional inorganic semiconductor material absworption peak, to visible-range even the near infrared light of part all can absorb, weakened the requirement of described optocoupler to light source, not only can use monochromatic source can also use mixed light, thereby increase the intensity of described light-emitting film group emitted light, increased the current transfer ratio of described optocoupler; And, absorption intensity is approximate, overcome the different problem of traditional organic semiconducting materials different-waveband absorption intensity, even the light generation wavelength shift that the described light-emitting film group in described optocoupler is sent, can not cause energy loss, thereby further increase the current transfer ratio of described optocoupler yet.
3, a kind of optocoupler of the present invention, light source, spacer assembly and photosensitive part, all adopt film assembly, effectively reduced the volume of described optocoupler, thereby increased the scope of application of described optocoupler.Simultaneously, described light-emitting film group, electric insulation separator and photo-conductive film group all can adopt organic material preparation, not only can give its large area and flexible function, further increase the scope of application, but also can realize by photoetching technique the preparation of the integrated optocoupler of multichannel.
4, the preparation method of a kind of optocoupler of the present invention, light source, spacer assembly and photosensitive part, all adopt film assembly preparation technology simple, has very wide application prospect.
Brief description of the drawings
For content of the present invention is more likely to be clearly understood, below according to a particular embodiment of the invention and by reference to the accompanying drawings, the present invention is further detailed explanation, wherein
Fig. 1 is optocoupler principle schematic in prior art;
Fig. 2 is optocoupler structural representation described in embodiment 1;
Fig. 3 is optocoupler structural representation described in embodiment 2;
Fig. 4 is light-emitting film group structural representation;
Fig. 5 is photo-conductive film group structural representation;
Fig. 6-1～Fig. 6-8th, the preparation flow figure of optocoupler shown in Fig. 2;
Fig. 7 is the input and output current curve diagram of optocoupler described in embodiment 1;
Fig. 8 is the input and output current curve diagram of optocoupler described in embodiment 2;
Fig. 9 is the input and output current curve diagram of optocoupler described in embodiment 3;
Figure 10 is the frequency response curve of optocoupler described in embodiment 3;
Figure 11 is the input and output current curve diagram of optocoupler described in comparative example;
Figure 12 is the abosrption spectrogram of photosensitive layer described in embodiment 1;
Figure 13 is the abosrption spectrogram of photosensitive layer described in comparative example.
In figure, Reference numeral is expressed as: A-light-emitting film group, B-photo-conductive film group, C-electric insulation separator, 1-substrate, the first electrode of 41-light-emitting film group, 42-light emitting functional layer, the second electrode of 43-light-emitting film group, the second electrode pin of 431-light-emitting film group, the first electrode of 51-photo-conductive film group, the first electrode pin of 511-photo-conductive film group, the photosensitive functional layer of 52-, the second electrode of 53-photo-conductive film group, the second electrode pin of 531-photo-conductive film group, 6-encapsulated layer.
Embodiment
In order to make the object, technical solutions and advantages of the present invention clearer, below in conjunction with accompanying drawing, embodiments of the present invention are described in further detail.
The present invention can implement in many different forms, and should not be understood to be limited to embodiment set forth herein.On the contrary, provide these embodiment, making the disclosure will be thorough and complete, and design of the present invention fully will be conveyed to those skilled in the art, and the present invention will only be limited by claim.In the accompanying drawings, for clarity, can exaggerate layer and size and the relative size in region.Should be understood that, when element for example layer, region or substrate be known as " being formed on " or " being arranged on " another element " on " time, this element can be set directly on described another element, or also can have intermediary element.On the contrary, in the time that element is known as on " being formed directly into " or " being set directly at " another element, there is not intermediary element.
Embodiment 1
The present embodiment provides a kind of optocoupler, as shown in Figure 2, be included in light-emitting film group A, the transparent electrical dielectric isolation layer C, the photo-conductive film group B that on substrate 1, are cascading, the electrode near described electric insulation separator C in light-emitting film group A and photo-conductive film group B is identical or different transparency electrode.
Described substrate 1 can be glass substrate or polymeric substrates, the present embodiment preferred flexible polyimide substrate.
Described light-emitting film group A preferably has OLED, can be that organic molecule luminescent device can be also polymer light-emitting device, comprise the first electrode 41, the light emitting functional layer 42 of light-emitting film group, the second electrode 43 of light-emitting film group, as shown in Figure 4, described light emitting functional layer 42 further comprises organic luminous layer, and one or more combination in hole injection layer, hole transmission layer, electron injecting layer, electron transfer layer.
In the present embodiment, described light-emitting film group comprises successively from the bottom to top the first electrode 41, hole injection layer, hole transmission layer, luminescent layer, the electron transfer layer of light-emitting film group, the second electrode 43 of light-emitting film group in the direction perpendicular to described substrate 1.
The first electrode 41 of light-emitting film group, can adopt inorganic conductive material or organic conductive material, inorganic material is generally the metal oxides such as tin indium oxide (hereinafter to be referred as ITO), zinc oxide, zinc tin oxide or gold, copper, silver, the metal that the work functions such as nickel alumin(i)um alloy are higher, organic conductive material is generally polythiophene/polyvinylbenzenesulfonic acid sodium (hereinafter to be referred as PEDOT:PSS), polyaniline (hereinafter to be referred as PANI), carbon nano-tube, Graphene, the present embodiment preferred chromium nickel alloy (GrNi), thickness is 150nm.
Hole injection layer, hole transmission layer, luminescent layer material therefor and the same prior art of preparation method, the preferably copper of hole injection layer described in the present embodiment phthalocyanine (CuPc), thickness is 100nm; Hole transmission layer can adopt the low molecular material of arylamine class and the branch polymer same clan, is preferably N, N '-bis--(1-naphthyl)-N, and N '-diphenyl-1,1-xenyl-4,4-diamines (NPB), thickness is 20nm.
Luminescent layer can be fluorescent material or phosphor material, as metal organic complex, can be selected from three (oxine) aluminium (Alq
3), (the adjacent amine phenol of salicylidene)-(oxine) closes aluminium (III) (Al (Saph-q)) compounds, can dopant dye in this small molecule material, doping content is 0.01wt ﹪～20wt ﹪ of small molecule material, dyestuff is generally aromatic condensed ring class material, as 5, 6, 11, 12-tetraphenyl aphthacene (being called for short rubrene), Coumarins material, as N, N '-dimethylquinacridone (being called for short DMQA), 10-(2-[4-morpholinodithio)-1, 1, 7, 7,-tetramethyl-2, 3, 6, 7-tetrahydrochysene-1H, 5H, 11H-benzo [1] pyrans [6, 7, 8-ij] quinoline piperazine (being called for short C545T), or be two pyrans class materials, as the 4-4-dicyano methylene-2-tert-butyl group-6-(1, 1, 7, 7-tetramethyl-julolidine-9-vinyl)-4H-pyrans (being called for short DCJTB), luminescent layer material also can adopt carbazole derivates as 4,4 '-N, N '-bis-carbazole-biphenyl (being called for short CBP), polyvinylcarbazole (PVK), can Doping Phosphorus photoinitiator dye in this material, as three (2-phenylpyridine) iridium (Ir (ppy) 3), two (2-phenylpyridine) (acetylacetone,2,4-pentanedione) iridium (Ir (ppy) 2 (acac)), octaethylporphyrin platinum (PtOEP) etc., the preferred Alq of the present embodiment
3with the doped layer of C545T, wherein Alq
3doping volume ratio be 0.8%, thickness is 30nm.
Described electron transfer layer material therefor and the same prior art of preparation method, the preferred Alq of electron transfer layer described in the present embodiment
3layer, thickness is 20nm.
The second electrode 43 of described light-emitting film group is general adopts the alloy of metal that the work functions such as lithium, magnesium, calcium, strontium, aluminium, indium are lower or they and copper, gold, silver, or above-mentioned metal and the alternately electrode layer of formation of its fluoride, or also use ITO, the light that described light-emitting film group A sends must see through this layer of ejaculation, the preferred Ag electrode of the present embodiment, thickness is 30nm.
The chromaticity coordinates of described light-emitting film group A is (0.3,0.36).
Photo-conductive film group B described in the present embodiment, structure as shown in Figure 5, comprises successively from the bottom to top the second electrode 53 of the first electrode 51, photosensitive functional layer 52 and the photo-conductive film group of photo-conductive film group in the direction perpendicular to described substrate 1.
Described photosensitive functional layer 52 comprises the photosensitive layer with photoconductive effect or light sensitivity, and the absorption spectrum width of described photosensitive layer is more than or equal to 300nm.Described photosensitive layer material is selected from but is not limited to perovskite material, such as RNH
3mX
3, wherein R is C
1-C
20aliphat straight or branched alkyl, M is that configuration of extra-nuclear electron is nd
10(n+1) s
2(n+1) p
2metallic atom, X is one or more the combination in halogen.
The present embodiment, described photosensitive functional layer 52 only comprises photosensitive layer, preferably CH
3nH
3pbI
3, thickness is 200nm, as shown in figure 12, absworption peak wave-length coverage is 400～750nm.
The first electrode 51 of described photo-conductive film group should be transparent extraction electrode, it can be one or more the alloy in lithium, magnesium, calcium, strontium, aluminium, indium, copper, gold, silver, or the electrode layer that alternately forms of one or more and its fluoride in lithium, magnesium, calcium, strontium, aluminium, indium, copper, gold, silver, or one in tin indium oxide, polythiophene/polyvinylbenzenesulfonic acid sodium, polyaniline, carbon nano-tube, Graphene, the preferred ITO electrode of the present embodiment, thickness is 80nm; The second electrode 53 of described photo-conductive film group can be opaque metal electrode, preferably Ag electrode, and thickness is 150nm.
Described electric insulation separator C is the hyaline membrane structure of one or more the stacking formation in fluoropolymer, polymethyl methacrylate, dimethyl silicone polymer, fluoropolymer (teflon) film of the present embodiment preferably clear, and thickness is 300nm.
The preparation flow of described optocoupler is as shown in Fig. 6-1～Fig. 6-8, and concrete preparation method is:
S1, as in Figure 6-1, on described substrate 1, form chrome-nickel conductive film by magnetron sputtering technique, utilize photoetching and etching technics that it is prepared into the first electrode 41 of horizontal strip light-emitting film group, and the second electrode pin 431 of light-emitting film group, the first electrode pin 511 of photo-conductive film group, the second electrode pin 531 of photo-conductive film group.
S2, as shown in Fig. 6-2, by vacuum evaporation process light emitting functional layer 42 in layer by layer deposition light-emitting film group A on the first electrode 41 of described light-emitting film group, be the copper phthalocyanine of 100nm, the NPB of 20nm, by the method that in vacuum, steam altogether in two sources, evaporation 30nm Alq
3and C545T, and the Alq of 20nm
3.
As shown in Fig. 6-3, the Ag electrode of direct vacuum evaporation 30nm in described light emitting functional layer 42, the second electrode 43 that forms the light-emitting film group that covers described shared insulated column, the second electrode 43 of light-emitting film group is electrically connected with the second electrode pin 431 of described light-emitting film group.
S3, as shown in Fig. 6-4, transparent fluoropolymer (the Teflon polyflon that the preferably E.I.Du Pont Company produces) film of method deposition one deck 300nm of vacuum evaporation, formation covers the electric insulation separator C of the second electrode 43 of described light-emitting film group.
S4, as shown in Fig. 6-5, by method Direct precipitation 80nm ITO transparent membrane on described electric insulation separator C of magnetron sputtering, as the first electrode 51 of photo-conductive film group, the first electrode 51 of described photo-conductive film group is connected with the first electrode pin electricity 511 of described photo-conductive film group.
S5, as shown in Fig. 6-6, on the first electrode 51 of described photo-conductive film group, form CH by wet method spin coating proceeding
3nH
3pbI
3as photosensitive layer, form photosensitive functional layer 52.Spin coating solution is CH
3nH
3i and PbI
2dimethyl formamide (DMF) saturated solution, wherein CH
3nH
3i and PbI
2mol ratio be 1:1.
As convertible embodiment of the present invention, described photosensitive layer can pass through wet method spin-coating method, vacuum vapour deposition preparation.
Described wet method spin coating proceeding can be divided into two kinds of a step spin coating and two step spin coatings.
A described step spin-coating method refers to preparation preparation CH
3nH
3pbI
3the solution of film, only carried out a step spin coating and formed film; Solution is by CH
3nH
3i and PbI
2mix according to a certain ratio, solvent can be a kind of or two kinds of mixing in DMF or 2-propanol.
Described two step spin-coating methods refer to preparation CH
3nH
3pbI
3the required bi-material of film is mixed with respectively certain density solution, and spin coating forms photosensitive layer film successively in two steps, as by PbI
2be dissolved in DMF, make the solution that solubility is 462mg/mL, with the speed spin coating 60s of 5000rpm, the 15min that anneals at 80 DEG C, being then immersed in concentration is 10mg/mLCH
3nH
3in the DMF solution of I, and the 15min that anneals at 80 DEG C, make photosensitive layer film.
The method of vacuum evaporation can be divided into single source evaporation and double source steams two kinds altogether.
Described single source evaporation refers to and will first synthesize CH
3nH
3pbI
3, then this material is directly formed to required film with the speed evaporation of 0.1～0.5nm/s.
Described double source steams altogether and refers to and will prepare the required bi-material CH of perovskite thin film
3nH
3i and PbI
2, respectively as two evaporation sources, with identical evaporation rate, as 0.1～0.5nm/s, obtain the photosensitive layer film of certain proportioning.
S6, as shown in Fig. 6-7, by vacuum evaporation process Direct precipitation 150nm Ag electrode on described photosensitive unit, the second electrode 53 that forms the described photo-conductive film group that covers described photosensitive functional layer 52, the second electrode 53 of described photo-conductive film group is electrically connected with the second electrode pin 531 of described photo-conductive film group.
S7, as shown in Fig. 6-8, on the second electrode 53 of described photo-conductive film group, deposit again one deck TiN film as encapsulated layer 6 by magnetron sputtering technique, at this moment, prepared by described optocoupler.
Described optocoupler is tested, used Agilent device analysis instrument to carry out the test of the signal of telecommunication, and the signal of telecommunication that extracts each optocoupler unit imports processing terminal and carry out data processing, data as shown in Figure 7.
Have extraordinary linear relationship from the input and output of scheming visible this device, current transfer ratio can reach 30-100%.
Embodiment 2
The present embodiment provides a kind of optocoupler, as shown in Figure 3, prepares successively photo-conductive film group B, electric insulation separator C and light-emitting film group A on substrate 1 from bottom to top.Concrete preparation method is:
S1, adopt magnetron sputtering technique and mask direct the second electrode of formation photo-conductive film group on substrate 1, and the first electrode pin of photo-conductive film group, the first electrode pin of light-emitting film group, the second electrode pin of light-emitting film group;
Described substrate preferred flexible polyimide substrate, the second electrode of described photo-conductive film group is preferably aluminium electrode, and thickness is 100nm.
S2, on the second electrode of described photo-conductive film group, form the first electrode of photosensitive functional layer, photo-conductive film group by wet processing or atom layer deposition process, the first electrode of described photo-conductive film group is electrically connected with the first electrode pin of described photo-conductive film group.
In the present embodiment, described photosensitive functional layer further comprises photosensitive layer and the first N-shaped semiconductor layer of stacking setting, and described photosensitive layer arranges near described light-emitting film group.
Described the first N-shaped semiconductor layer is the first N-shaped semiconductor material layer, as ZnO layer or TiO
2layer, can also can prepare by atom layer deposition process by wet processing preparation of the prior art, and described in the present embodiment, the first N-shaped semiconductor layer is preferably the ZnO layer of preparing by atom layer deposition process, and thickness is 150nm.
Described photosensitive layer is RNH
3mX
3, wherein R is C
1-C
20aliphat straight or branched alkyl, M is that configuration of extra-nuclear electron is nd
10(n+1) s
2(n+1) p
2metallic atom, X is one or more the combination in halogen.The present embodiment is preferably CH
3nH
3pbI
3, thickness is 200nm, as shown in figure 12, absworption peak wave-length coverage is 400～750nm.
The first electrode of described photo-conductive film group is preferably ITO electrode, and thickness is 60nm.
S3, on the first electrode of described photo-conductive film group, directly form transparent electric insulation separator, material therefor and preparation method are with embodiment 1.
S4, on described electric insulation separator, directly form the second electrode of light-emitting film group, the second electrode of described light-emitting film group is electrically connected with the second electrode pin of described light-emitting film group; In the present embodiment, the second electrode of described light-emitting film group is preferably the ITO electrode that thickness is 80nm.
S5, in described light-emitting film group, form light emitting functional layer, described light emitting functional layer overlaps in the vertical direction of described substrate with the described photosensitive functional layer limiting in step S2;
In the present embodiment, described light emitting functional layer comprises hole transmission layer, luminescent layer, the electron transfer layer of stacked setting.Described hole transmission layer, described luminescent layer, described electron transfer layer material therefor and all same prior aries of preparation method.In the present embodiment, described hole transmission layer is preferably the NPB of 40nm; Described luminescent layer is the doped layer of ADN (9,10-bis-(2-naphthyl) the anthracene)/DPVBi ([4,4 ' bis-(2,2 diphenylethyllene) 1,1 ' biphenyl) of 30nm, and the doping volume ratio of described AND is 7%; Described electron transfer layer is preferably the BPhen (4,7-diphenyl-1,10-phenanthroline) of 40nm.
S6, in described light emitting functional layer, directly form the first electrode of described light-emitting film group that covers described light emitting functional layer by magnetron sputtering technique, in the present embodiment, the first electrode of described light-emitting film group is preferably the Mg:Al/Ag layer of stacked setting, Mg:Al layer compares evaporation with the quality of 10:1, thickness is 150nm, the thickness of Ag layer is 50nm, and the first electrode of described light-emitting film group is electrically connected with the first electrode pin of described light-emitting film group.
In the present embodiment, the chromaticity coordinates of described light-emitting film group is (0.15,0.08).
S7, on the second electrode 53 of described photo-conductive film group, deposit one deck TiN film as encapsulated layer 6 by magnetron sputtering technique, at this moment, prepared by described optocoupler again.
Described optocoupler is tested, used Agilent device analysis instrument to carry out the test of the signal of telecommunication, and the signal of telecommunication that extracts each optocoupler unit imports processing terminal and carry out data processing, data as shown in Figure 8.
Have extraordinary linear relationship from the input and output of scheming visible this device, current transfer ratio can reach 30-100%.
Embodiment 3
The present embodiment provides a kind of optocoupler, concrete structure and preparation method are with embodiment 2, unique different be in the present embodiment, described photosensitive functional layer further comprises the second p-type semiconductor layer and the second N-shaped semiconductor layer that are arranged on described photosensitive layer both sides, and described the second p-type semiconductor layer arranges near described light-emitting film group.
Described the second N-shaped semiconductor layer is N-shaped semiconductor material layer, is selected from but is not limited to TiO
2, ZnO etc. has the inorganic semiconductor material of larger electron mobility, the present embodiment is preferably TiO
2layer, thickness is 150nm.
Described the second p-type semiconductor layer is p-type semiconductor material layer, be selected from but be not limited to the poly-triarylamine (PTAA), 2 of organic semiconducting materials, 2', 7,7'-tetrabromo-9,9'-spiral shell two, three (4-iodobenzene) amine (Spiro-MeOTAD), the present embodiment is preferably Spiro-MeOTAD, and thickness is 40nm.
Described optocoupler is tested, used Agilent device analysis instrument to carry out the test of the signal of telecommunication, and the signal of telecommunication that extracts each optocoupler unit imports processing terminal and carry out data processing, data as shown in Figures 9 and 10.
Have extraordinary linear relationship from the input and output of scheming visible this device, and under high-frequency input signal, still have the very signal output of coupling, current transfer ratio can reach 50-100%.
Comparative example
This comparative example provides a kind of optocoupler, and concrete structure and preparation method be with embodiment 1, unique different be photosensitive layer material difference, be indoles squarylium cyanine dyes, as shown in figure 13, absworption peak wave-length coverage is 600-700nm to absorption spectrum.
Described optocoupler is tested, used Agilent device analysis instrument to carry out the test of the signal of telecommunication, and the signal of telecommunication that extracts each optocoupler unit imports processing terminal and carry out data processing, data as shown in figure 11.
Also have certain linear relationship from the input and output of scheming visible this device, still, the maximum of current transfer ratio is only 2%, far below the data in embodiment 1-3.
Obviously, above-described embodiment is only for example is clearly described, and the not restriction to execution mode.For those of ordinary skill in the field, can also make other changes in different forms on the basis of the above description.Here without also giving exhaustive to all execution modes.And the apparent variation of being extended out thus or variation are still among protection scope of the present invention.
Claims (12)
1. an optocoupler, the light-emitting film group that comprises substrate, be cascading on described substrate, transparent electric insulation separator and photo-conductive film group, it is characterized in that, described photo-conductive film group further comprises the second electrode of the first electrode of photo-conductive film group, photosensitive functional layer, photo-conductive film group, described photosensitive functional layer comprises the organic photosensitive layer with photoconductive effect or light sensitivity, and the absorption spectrum width of described photosensitive layer is more than or equal to 300nm.
2. optocoupler according to claim 1, is characterized in that, the structural formula of described photosensitive layer material is RNH
3mX
3,
Wherein R is C
1-C
20aliphat straight or branched alkyl, M is that configuration of extra-nuclear electron is nd
10(n+1) s
2(n+1) p
2metallic atom, X is one or more the combination in halogen.
3. optocoupler according to claim 1 and 2, is characterized in that, described photosensitive layer material is p-type, and described photosensitive functional layer also comprises the first N-shaped semiconductor layer, and described photosensitive layer arranges near described light-emitting film group.
4. according to the arbitrary described optocoupler of claim 1-3, it is characterized in that, described photosensitive functional layer also comprises the second p-type semiconductor layer and the second N-shaped semiconductor layer that are arranged on described photosensitive layer both sides, and described the second p-type semiconductor layer arranges near described light-emitting film group.
5. according to the arbitrary described optocoupler of claim 1-4, it is characterized in that, the organic electroluminescent LED that described light-emitting film group is at least one stacked setting, described light-emitting film group further comprises the first electrode, the light emitting functional layer of light-emitting film group, the second electrode of light-emitting film group.
6. according to the arbitrary described optocoupler of claim 1-5, it is characterized in that, the chromaticity coordinates of described light-emitting film group is CIEx=0.05～0.7, CIEy=0.05～0.7.
7. according to the arbitrary described optocoupler of claim 1-6, it is characterized in that, described electric insulation separator is the hyaline membrane structure of one or more the stacking formation in fluoropolymer, polymethyl methacrylate, dimethyl silicone polymer.
8. according to the arbitrary described optocoupler of claim 1-7, it is characterized in that, the electrode near described electric insulation separator in described light-emitting film group and described photo-conductive film group is identical or different transparency electrode.
9. according to the arbitrary described optocoupler of claim 1-8, it is characterized in that, described transparency electrode is one or more the alloy in lithium, magnesium, calcium, strontium, aluminium, indium, copper, gold, silver, or the electrode layer that alternately forms of one or more and its fluoride in lithium, magnesium, calcium, strontium, aluminium, indium, copper, gold, silver, or one in tin indium oxide, polythiophene/polyvinylbenzenesulfonic acid sodium, polyaniline, carbon nano-tube, Graphene.
10. a preparation method for the arbitrary described optocoupler of claim 1-9, is characterized in that, comprises the steps:
S1, on substrate, form the first electrode of light-emitting film group, and the second electrode pin of light-emitting film group, the first electrode pin of photo-conductive film group, the second electrode pin of photo-conductive film group;
S2, on the first electrode of described light-emitting film group, form successively the second electrode of light emitting functional layer, light-emitting film group, the second electrode of described light-emitting film group is electrically connected with the second electrode pin of described light-emitting film group;
S3, on the second electrode of described light-emitting film group, directly form transparent electric insulation separator;
S4, on described electric insulation separator, directly form the first electrode of photo-conductive film group, the first electrode of described photo-conductive film group is electrically connected with the first electrode pin of described photo-conductive film group;
S5, on the first electrode of described photo-conductive film group, form photosensitive functional layer, described photosensitive functional layer overlaps in the vertical direction of described substrate with the light emitting functional layer described in step S2;
S6, in described photosensitive functional layer, directly form the second electrode of described photo-conductive film group that covers described photosensitive functional layer, the second electrode of described photo-conductive film group is electrically connected with the second electrode pin of described photo-conductive film group.
The preparation method of 11. 1 kinds of arbitrary described optocouplers of claim 1-9, is characterized in that, comprises the steps:
S1, on substrate, form the second electrode of photo-conductive film group, and the first electrode pin of photo-conductive film group, the first electrode pin of light-emitting film group, the second electrode pin of light-emitting film group;
S2, on the second electrode of described photo-conductive film group, form successively the first electrode of photosensitive functional layer, photo-conductive film group, the first electrode of described photo-conductive film group is electrically connected with the first electrode pin of described photo-conductive film group;
S3, on the first electrode of described photo-conductive film group, directly form transparent electric insulation separator;
S4, on described electric insulation separator, directly form the second electrode of light-emitting film group, the second electrode of described light-emitting film group is electrically connected with the second electrode pin of described light-emitting film group;
S5, in described light-emitting film group, form light emitting functional layer, described light emitting functional layer overlaps in the vertical direction of described substrate with the described photosensitive functional layer limiting in step S2;
S6, in described light emitting functional layer, directly form the first electrode of described light-emitting film group that covers described light emitting functional layer, the first electrode of described light-emitting film group is electrically connected with the first electrode pin of described light-emitting film group.
12. according to the preparation method of the optocoupler described in claim 10 or 11, it is characterized in that, also comprises formation encapsulated layer, the step that described optocoupler is encapsulated after step S6.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410287332.2A CN104022135B (en) | 2014-05-19 | 2014-06-24 | Optical coupler and preparation method for same |
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2014102117293 | 2014-05-19 | ||
| CN201410211729.3 | 2014-05-19 | ||
| CN201410211729 | 2014-05-19 | ||
| CN201410287332.2A CN104022135B (en) | 2014-05-19 | 2014-06-24 | Optical coupler and preparation method for same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104022135A true CN104022135A (en) | 2014-09-03 |
| CN104022135B CN104022135B (en) | 2017-05-03 |
Family
ID=51438803
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410287332.2A Active CN104022135B (en) | 2014-05-19 | 2014-06-24 | Optical coupler and preparation method for same |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104022135B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105070838A (en) * | 2015-08-27 | 2015-11-18 | 苏州大学 | Perovskite type solar cell based on multi-orientation ordered crystallization and preparation method thereof |
| CN105790732A (en) * | 2014-12-24 | 2016-07-20 | 清华大学 | Multipath signal superposition device |
| CN108796449A (en) * | 2018-06-25 | 2018-11-13 | 陕西师范大学 | It is a kind of to prepare CH with the thermal evaporation of single source3NH3PbI3The method of film |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020027206A1 (en) * | 1999-12-02 | 2002-03-07 | Han-Tzong Yuan | Optocouplers having integrated organic light-emitting diodes |
| CN101442043A (en) * | 2008-12-31 | 2009-05-27 | 清华大学 | Organic light coupling device |
| CN103346018A (en) * | 2013-06-26 | 2013-10-09 | 中国科学院青岛生物能源与过程研究所 | Iodide solar cell prepared through solid-liquid reactions and provided with perovskite structures |
| CN103456888A (en) * | 2013-09-26 | 2013-12-18 | 天津理工大学 | Hybrid solar cell with Cs mingling with ZnO as electron transfer layer |
| CN103579282A (en) * | 2013-09-29 | 2014-02-12 | 清华大学 | Multi-channel integrated optical couplers and method for manufacturing same |
| CN103700769A (en) * | 2013-12-03 | 2014-04-02 | 常州大学 | Organic/inorganic hybridized perovskite solar battery and preparation method thereof |
-
2014
- 2014-06-24 CN CN201410287332.2A patent/CN104022135B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020027206A1 (en) * | 1999-12-02 | 2002-03-07 | Han-Tzong Yuan | Optocouplers having integrated organic light-emitting diodes |
| CN101442043A (en) * | 2008-12-31 | 2009-05-27 | 清华大学 | Organic light coupling device |
| CN103346018A (en) * | 2013-06-26 | 2013-10-09 | 中国科学院青岛生物能源与过程研究所 | Iodide solar cell prepared through solid-liquid reactions and provided with perovskite structures |
| CN103456888A (en) * | 2013-09-26 | 2013-12-18 | 天津理工大学 | Hybrid solar cell with Cs mingling with ZnO as electron transfer layer |
| CN103579282A (en) * | 2013-09-29 | 2014-02-12 | 清华大学 | Multi-channel integrated optical couplers and method for manufacturing same |
| CN103700769A (en) * | 2013-12-03 | 2014-04-02 | 常州大学 | Organic/inorganic hybridized perovskite solar battery and preparation method thereof |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105790732A (en) * | 2014-12-24 | 2016-07-20 | 清华大学 | Multipath signal superposition device |
| CN105790732B (en) * | 2014-12-24 | 2018-05-29 | 清华大学 | A kind of multiple signals stacking apparatus |
| CN105070838A (en) * | 2015-08-27 | 2015-11-18 | 苏州大学 | Perovskite type solar cell based on multi-orientation ordered crystallization and preparation method thereof |
| CN108796449A (en) * | 2018-06-25 | 2018-11-13 | 陕西师范大学 | It is a kind of to prepare CH with the thermal evaporation of single source3NH3PbI3The method of film |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104022135B (en) | 2017-05-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Poriel et al. | Blue single‐layer organic light‐emitting diodes using fluorescent materials: a molecular design view point | |
| Qi et al. | Advances in organic near‐infrared materials and emerging applications | |
| Kanagaraj et al. | Small molecules in light‐emitting electrochemical cells: promising light‐emitting materials | |
| Squeo et al. | BODIPY platform: A tunable tool for green to NIR OLEDs | |
| CN101752510B (en) | Light-emitting element, light-emitting device, electronic device, and lighting device | |
| Gangadhar et al. | Phenothiazine functional materials for organic optoelectronic applications | |
| US20120299045A1 (en) | Organic electroluminescent device with integrated layer for colour conversion | |
| EP3277684B1 (en) | Specific n and p active materials for organic photoelectric conversion layers in organic photodiodes | |
| Yang et al. | Near infrared to visible light organic up-conversion devices with photon-to-photon conversion efficiency approaching 30% | |
| CN111224007B (en) | Light emitting diode and light emitting device having the same | |
| CN103579282B (en) | Integrated optocoupler of a kind of multichannel and preparation method thereof | |
| CN104022135A (en) | Optical coupler and preparation method for same | |
| CN101442043A (en) | Organic light coupling device | |
| Bhat et al. | Versatile aza‐BODIPY‐based low‐bandgap conjugated small molecule for light harvesting and near‐infrared photodetection | |
| CN111341920B (en) | Organic electroluminescent device | |
| JP2010225838A (en) | Photovoltaic element | |
| Choe et al. | Small Molecule-Based Light-Emitting Electrochemical Cells | |
| CN112209943A (en) | Material for photoelectric conversion element, organic thin film, photoelectric conversion element, imaging element, photosensor, and compound | |
| Ryan et al. | Helicenes for Optoelectronic Applications and Devices | |
| CN103996794A (en) | Organic luminous element | |
| CN103996795A (en) | Organic luminous element | |
| CN101087012B (en) | Organic EL component | |
| KR102418678B1 (en) | White light emission | |
| WO2023179986A1 (en) | Aza-boron-diquinomethene-based dyes as photoactive material for organic photoelectric conversion layers in organic photodiodes | |
| Mone | Colors of Life and Optoelectronics: Zinc Porphyrins for Light-Emitting Electrochemical Cells and Organic Photodetectors |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |