CN101442011A - Method for processing down-lead frame of integrated circuit - Google Patents
Method for processing down-lead frame of integrated circuit Download PDFInfo
- Publication number
- CN101442011A CN101442011A CNA2008100720350A CN200810072035A CN101442011A CN 101442011 A CN101442011 A CN 101442011A CN A2008100720350 A CNA2008100720350 A CN A2008100720350A CN 200810072035 A CN200810072035 A CN 200810072035A CN 101442011 A CN101442011 A CN 101442011A
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- nickel
- lead frame
- plating
- integrated circuit
- copper
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- Electroplating Methods And Accessories (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
The invention discloses a method for processing a lead wire frame of an integrated circuit, which comprises the following steps: stamping a copper alloy to form a frame main body which comprises a heating panel for placing a chip and a lead wire for connecting the chip; tightly clamping the frame main body by using two moulds, and exposing the part to be plated with nickel; plating a layer of nickel on the part to be plated with the nickel in the state of clamping the moulds; and performing the demoulding to obtain a copper lead wire frame of which the local part is plated with the nickel. The method can ensure the quality of products, avoid waste and reduce pollution.
Description
Technical field
The present invention relates to a kind of lead frame of integrated circuit, especially relevant with its processing method.
Background technology
In the prior art, a kind of circuit lead frame is arranged shown in Fig. 1, Fig. 2, Fig. 2-1, be to make chassis body 10 by copper alloy, chassis body 10 comprises the heating panel 101 and the lead-in wire 102 that is connected chip of placing the chip (not shown), be coated with one deck nickel 20 at lead-in wire 102 ends that are connected with chip, according to designing requirement, also be coated with one deck nickel 20 on the fin 101.
Its work flow as shown in Figure 3, earlier on the copper alloy flat board, paste plastic film, expose at position that will nickel plating (end or the entire heat dissipation plate 101 of lead-in wire 102), then, at naked position plating one deck nickel 20, afterwards plastic film is peelled off, carry out punching press again, and cut unnecessary copper alloy flat board, and form fin 101 and lead-in wire 102, promptly make the copper lead frame of topical nickel galvanization.
Anatomize above-mentioned processing method, be not difficult to find the defective of its existence:
One, the mode of adopt pasting plastic film is carried out topical nickel galvanization, also can adhere to a large amount of nickel materials on plastic film, and the nickel on the plastic film is utterly useless, finally can not only cause significant wastage, and produce industrial pollution with the throwing off and abandon of plastic film;
Two, plastic film is easy to generate deviation in the attaching process, makes the part of exposure deviation occur, finally causes the position of nickel plating inaccurate, influences the quality of product;
Three, plastic film is attached to the dull and stereotyped top edge of copper alloy and occurs pasting not tight easily, if the generation gap, plating bath immerses in the gap thus during plating, causes plating leakage (so-called plating leakage is meant is not needing plating place to electroplate), waste plated material, influence the quality of product;
Four, divest in the process of plastic film, cause the distortion of copper alloy plate material easily, stamping procedure is caused adverse effect;
Five, punch forming again behind the topical nickel galvanization also is easy to generate deviation in the process of punching press, make the nickel plating position of going out product deviation occur, influences the quality of product;
Six, electroplate punch forming more earlier, also contain nickel in the waste material that punching press is come out (copper alloy), the recovery value of waste material is had a greatly reduced quality with fine copper alloy phase ratio, is worth thereby reduce waste recovery.
For these reasons, the present invention studies the copper lead frame processing method of existing topical nickel galvanization, has reformulated the new machining method of the copper lead frame of a cover topical nickel galvanization, and this case produces thus.
Summary of the invention
The object of the present invention is to provide a kind of lead frame processing method of integrated circuit,, avoid waste and reduce pollution to guarantee the quality of product.
To achieve these goals, technical scheme of the present invention is as follows:
With the dull and stereotyped punch forming chassis body of copper alloy, the molding framework main body comprises the heating panel of placing chip and the lead-in wire that is connected chip earlier; Utilize two moulds that chassis body is clamped again, and come out in position that will nickel plating; Then, under the state of mold cramping, at naked position plating one deck nickel; At last, the demoulding obtains the copper lead frame of topical nickel galvanization.
After adopting such scheme, the present invention electroplates after the first punch forming, so the present invention has following advantage:
One, adopts the mode of mold cramping to carry out topical nickel galvanization, only electroplate, saved plated material, avoid nickel plating to abandon together and cause waste and industrial pollution with plastic film at the position that needs are electroplated;
Two, by the mould mechanical grip, can prevent that mould and chassis body from producing deviation, order is wanted to make the position of nickel plating accurate, the quality of assurance product outside the part of nickel plating accurately is exposed to;
Three, by mechanical grip, do not have the gap between mould and the copper alloy flat board, effectively avoid plating leakage, save plated material, guarantee product quality;
Four, first punch forming re-plating does not contain nickel in the waste material that punching press is come out, the corresponding waste recovery value that improved;
Although five in Ni-Speed, also can be coated with nickel on the mould, mould still can use repeatedly, more can move back nickel to mould in use for some time, and mould is taken on an entirely new look, and the nickel of backing off can be reclaimed, and avoids waste.
The present invention will be further described below in conjunction with the drawings and specific embodiments.
Description of drawings
Fig. 1 is the structural representation of prior art circuit lead frame;
Fig. 2 is the schematic cross-section of prior art circuit lead frame;
Fig. 2-the 1st, the cross section partial enlarged drawing of prior art circuit lead frame;
Fig. 3 is the processing process figure of prior art circuit lead frame;
Fig. 4 is processing process figure of the present invention.
Label declaration
Embodiment
As shown in Figure 4, be that the process of working integrated circuit lead frame of the present invention is such:
With the dull and stereotyped punch forming chassis body (its profile is same as shown in Figure 1) of copper alloy, this chassis body has heating panel and lead-in wire earlier;
Utilize two mold cramping chassis body again, position that only will nickel plating (as the end or the entire heat dissipation plate of lead-in wire) exposes;
Then, under the state of mold cramping, at naked position plating one deck nickel;
At last, the copper lead frame of topical nickel galvanization is made in the demoulding.
Claims (1)
1, the lead frame processing method of integrated circuit is characterized in that:
With the dull and stereotyped punch forming chassis body of copper alloy, the molding framework main body comprises the heating panel of placing chip and the lead-in wire that is connected chip earlier;
Utilize two moulds that chassis body is clamped again, and come out in position that will nickel plating;
Then, under the state of mold cramping, at naked position plating one deck nickel;
At last, the demoulding obtains the copper lead frame of topical nickel galvanization.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2008100720350A CN101442011B (en) | 2008-10-29 | 2008-10-29 | Method for processing down-lead frame of integrated circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2008100720350A CN101442011B (en) | 2008-10-29 | 2008-10-29 | Method for processing down-lead frame of integrated circuit |
Publications (2)
Publication Number | Publication Date |
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CN101442011A true CN101442011A (en) | 2009-05-27 |
CN101442011B CN101442011B (en) | 2010-04-14 |
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CN2008100720350A Active CN101442011B (en) | 2008-10-29 | 2008-10-29 | Method for processing down-lead frame of integrated circuit |
Country Status (1)
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CN (1) | CN101442011B (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114318437A (en) * | 2021-12-22 | 2022-04-12 | 厦门捷昕精密科技股份有限公司 | Method for processing lead frame radiating plate of high-power integrated circuit |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6037653A (en) * | 1997-03-25 | 2000-03-14 | Samsung Aerospace Industries, Ltd. | Semiconductor lead frame having multi-layered plating layer including copper-nickel plating layer |
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2008
- 2008-10-29 CN CN2008100720350A patent/CN101442011B/en active Active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114318437A (en) * | 2021-12-22 | 2022-04-12 | 厦门捷昕精密科技股份有限公司 | Method for processing lead frame radiating plate of high-power integrated circuit |
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Publication number | Publication date |
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CN101442011B (en) | 2010-04-14 |
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