CN101436596B - Semiconductor device, display device and mobile device - Google Patents
Semiconductor device, display device and mobile device Download PDFInfo
- Publication number
- CN101436596B CN101436596B CN2008101760798A CN200810176079A CN101436596B CN 101436596 B CN101436596 B CN 101436596B CN 2008101760798 A CN2008101760798 A CN 2008101760798A CN 200810176079 A CN200810176079 A CN 200810176079A CN 101436596 B CN101436596 B CN 101436596B
- Authority
- CN
- China
- Prior art keywords
- occulter
- semiconductor device
- insulated substrate
- retaining part
- black
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 81
- 239000000758 substrate Substances 0.000 claims abstract description 141
- 230000015654 memory Effects 0.000 claims abstract description 106
- 238000003860 storage Methods 0.000 claims description 73
- 239000000463 material Substances 0.000 claims description 36
- 239000011347 resin Substances 0.000 claims description 31
- 229920005989 resin Polymers 0.000 claims description 31
- 238000009826 distribution Methods 0.000 claims description 23
- 239000011248 coating agent Substances 0.000 claims description 15
- 238000000576 coating method Methods 0.000 claims description 15
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 10
- 229910052500 inorganic mineral Inorganic materials 0.000 claims description 9
- 239000011707 mineral Substances 0.000 claims description 9
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 8
- 239000011159 matrix material Substances 0.000 claims description 8
- 229920001296 polysiloxane Polymers 0.000 claims description 7
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims description 6
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 claims description 6
- 239000006229 carbon black Substances 0.000 claims description 6
- 239000000975 dye Substances 0.000 claims description 6
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 claims description 6
- 238000012423 maintenance Methods 0.000 claims description 5
- 229910000859 α-Fe Inorganic materials 0.000 claims description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 239000011651 chromium Substances 0.000 claims description 4
- 229910052742 iron Inorganic materials 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 239000011733 molybdenum Substances 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- 229910000423 chromium oxide Inorganic materials 0.000 claims description 3
- 229960004643 cupric oxide Drugs 0.000 claims description 3
- 239000010439 graphite Substances 0.000 claims description 3
- 229910002804 graphite Inorganic materials 0.000 claims description 3
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 claims description 3
- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 238000012937 correction Methods 0.000 claims description 2
- PYKYMHQGRFAEBM-UHFFFAOYSA-N anthraquinone Natural products CCC(=O)c1c(O)c2C(=O)C3C(C=CC=C3O)C(=O)c2cc1CC(=O)OC PYKYMHQGRFAEBM-UHFFFAOYSA-N 0.000 claims 1
- 150000004056 anthraquinones Chemical class 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 claims 1
- 239000010409 thin film Substances 0.000 claims 1
- 230000000694 effects Effects 0.000 description 45
- 230000008859 change Effects 0.000 description 44
- 238000002474 experimental method Methods 0.000 description 27
- 239000010410 layer Substances 0.000 description 25
- 238000000034 method Methods 0.000 description 23
- 238000012216 screening Methods 0.000 description 19
- 230000000737 periodic effect Effects 0.000 description 15
- 239000004973 liquid crystal related substance Substances 0.000 description 13
- 238000012360 testing method Methods 0.000 description 13
- 239000012790 adhesive layer Substances 0.000 description 11
- 239000002390 adhesive tape Substances 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 238000009434 installation Methods 0.000 description 9
- 230000003287 optical effect Effects 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- 238000005286 illumination Methods 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 235000010755 mineral Nutrition 0.000 description 7
- LPQOADBMXVRBNX-UHFFFAOYSA-N ac1ldcw0 Chemical compound Cl.C1CN(C)CCN1C1=C(F)C=C2C(=O)C(C(O)=O)=CN3CCSC1=C32 LPQOADBMXVRBNX-UHFFFAOYSA-N 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 6
- 229920001721 polyimide Polymers 0.000 description 6
- 230000011664 signaling Effects 0.000 description 6
- 238000004088 simulation Methods 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 239000004411 aluminium Substances 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 230000014759 maintenance of location Effects 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- -1 anthraquinonyl Chemical group 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000004033 plastic Substances 0.000 description 4
- 229920003023 plastic Polymers 0.000 description 4
- 239000004642 Polyimide Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 230000001413 cellular effect Effects 0.000 description 3
- 239000000470 constituent Substances 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 238000007689 inspection Methods 0.000 description 3
- 239000013528 metallic particle Substances 0.000 description 3
- 239000000049 pigment Substances 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 239000009719 polyimide resin Substances 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 230000001105 regulatory effect Effects 0.000 description 3
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229910001074 Lay pewter Inorganic materials 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 239000004820 Pressure-sensitive adhesive Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 238000001764 infiltration Methods 0.000 description 2
- 230000008595 infiltration Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910001120 nichrome Inorganic materials 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229920001568 phenolic resin Polymers 0.000 description 2
- 239000005011 phenolic resin Substances 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000011856 silicon-based particle Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 108091064702 1 family Proteins 0.000 description 1
- 108091074834 12 family Proteins 0.000 description 1
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910001369 Brass Inorganic materials 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 239000004821 Contact adhesive Substances 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910000004 White lead Inorganic materials 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 229910052768 actinide Inorganic materials 0.000 description 1
- 150000001255 actinides Chemical class 0.000 description 1
- 229910052767 actinium Inorganic materials 0.000 description 1
- QQINRWTZWGJFDB-UHFFFAOYSA-N actinium atom Chemical compound [Ac] QQINRWTZWGJFDB-UHFFFAOYSA-N 0.000 description 1
- 239000002998 adhesive polymer Substances 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 230000002146 bilateral effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000010951 brass Substances 0.000 description 1
- 230000001680 brushing effect Effects 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 229910052792 caesium Inorganic materials 0.000 description 1
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 239000006231 channel black Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 235000013495 cobalt Nutrition 0.000 description 1
- QRJOYPHTNNOAOJ-UHFFFAOYSA-N copper gold Chemical compound [Cu].[Au] QRJOYPHTNNOAOJ-UHFFFAOYSA-N 0.000 description 1
- UTICYDQJEHVLJZ-UHFFFAOYSA-N copper manganese nickel Chemical compound [Mn].[Ni].[Cu] UTICYDQJEHVLJZ-UHFFFAOYSA-N 0.000 description 1
- 239000007822 coupling agent Substances 0.000 description 1
- 239000013530 defoamer Substances 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 description 1
- TUTOKIOKAWTABR-UHFFFAOYSA-N dimethylalumane Chemical compound C[AlH]C TUTOKIOKAWTABR-UHFFFAOYSA-N 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000003063 flame retardant Substances 0.000 description 1
- 239000005357 flat glass Substances 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 239000006232 furnace black Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000005984 hydrogenation reaction Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 229910052747 lanthanoid Inorganic materials 0.000 description 1
- 150000002602 lanthanoids Chemical class 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920006287 phenoxy resin Polymers 0.000 description 1
- 239000013034 phenoxy resin Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920002492 poly(sulfone) Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920001230 polyarylate Polymers 0.000 description 1
- 229920005668 polycarbonate resin Polymers 0.000 description 1
- 239000004431 polycarbonate resin Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920000306 polymethylpentene Polymers 0.000 description 1
- 239000011116 polymethylpentene Substances 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052701 rubidium Inorganic materials 0.000 description 1
- IGLNJRXAVVLDKE-UHFFFAOYSA-N rubidium atom Chemical compound [Rb] IGLNJRXAVVLDKE-UHFFFAOYSA-N 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052713 technetium Inorganic materials 0.000 description 1
- GKLVYJBZJHMRIY-UHFFFAOYSA-N technetium atom Chemical compound [Tc] GKLVYJBZJHMRIY-UHFFFAOYSA-N 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 1
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
- 235000014692 zinc oxide Nutrition 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78633—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device with a light shield
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/40—EEPROM devices comprising charge-trapping gate insulators characterised by the peripheral circuit region
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Ceramic Engineering (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Liquid Crystal (AREA)
Abstract
A semiconductor device of the present invention includes an insulating substrate, a nonvolatile memory formed above the insulating substrate and having a memory holding portion, and at least one light-shielding body covering an upper side, an under side, or both sides of the memory holding portion, wherein at least one of the light-shielding bodies is installed in such a way that a protrusion degree of the light-shielding body, which is defined by (a length of the light-shielding body protruded from the memory holding portion)/(a distance between the light-shielding body and the memory holding portion), is 0.1 or more.
Description
Technical field
The present invention relates to a kind of the have semiconductor device of nonvolatile memory, the display unit (LCD, OLED display etc.) of using this semiconductor device and mobile device (laptop computer, cell phone, handheld terminal etc.).
Background technology
A kind of method of the function by the TFT device that provides the non-volatile memories merit to improve to this device to be formed on the insulated substrate has attracted attention.
As the method that is used to improve above-mentioned TFT apparatus function, TOHKEMY No.2002-110829 communique discloses following method.This method will be described with reference to Figure 22.
TOHKEMY No.2002-110829 communique discloses a kind of TFT memory 90, comprises polysilicon layer 92, and polysilicon layer 92 has source electrode 92a, raceway groove 92b that is respectively formed on the substrate 91 and the zone that drains 92c; And be formed on oxidation film of grid (dielectric film) 93,95 on this polysilicon layer 92, and these oxidation film of grid 93,95 comprise a plurality of granular silicon particles 94 of catching carrier electric charge.
Yet, find that it is difficult to be used as display unit by the method for catching electric charge in a plurality of silicon grains.
Particularly, when this TFT memory is used as display unit, need be such as the illumination of grade backlight.Find that the electric charge of catching is excited and this electric charge is escaped from silicon grain when this illumination light is applied on the silicon grain in silicon grain.That is to say, find in the situation of the display unit of using illumination light, can not keep electric charge by in silicon grain, catching electric charge.
Therefore, use other charge holding films to replace silicon grain, and further use the various storages that have nothing to do with charge holding film to keep film to experimentize, but these attempt not causing the solution of the problems referred to above.
Summary of the invention
In view of above prior art level, a target of the present invention provides a kind of semiconductor device with nonvolatile memory, and the stored information when it can avoid rayed is lost.
Semiconductor device of the present invention comprises: insulated substrate, it is above and have the nonvolatile memory of storage retaining part (memory holding portion) to be formed on insulated substrate, and at least one occulter that covers upside, downside or the both sides of storage retaining part, wherein in the occulter at least one projection degree (protrusion degree) with occulter be 0.1 or bigger mode install, the projection degree of occulter defines by (from the length of the occulter of storage retaining part projection)/(distance between occulter and the storage retaining part).
Inventor of the present invention at first finds, by upside, downside or both sides at the storage retaining part of nonvolatile memory at least one occulter is installed, and can avoid stored information to lose when rayed.In addition, inventor of the present invention found through experiments, by with the projection degree be 0.1 or bigger mode occulter is installed, significantly improved the effect that occulter is installed, and therefore finished the present invention.
Description of drawings
Fig. 1 is the cross sectional view of structure that the semiconductor device of first embodiment of the invention is shown;
Fig. 2 is the cross sectional view of another structure that the semiconductor device of first embodiment of the invention is shown;
Fig. 3 A is the cross sectional view by the structure of band or the occulter that forms of sheet that illustrates in the semiconductor device that is used in first embodiment of the invention to 3E;
Fig. 4 A illustrates the display unit of second embodiment of the invention to 4C, and Fig. 4 A and 4B be respectively plane graph and lateral side view, and Fig. 4 C is along the cross sectional view of the I-I line intercepting of Fig. 4 A, in Fig. 4 B, has saved backlight module for the ease of diagram;
Fig. 5 be illustrate second embodiment of the invention display unit another structure plane graph and corresponding to Fig. 4 A;
Fig. 6 be illustrate third embodiment of the invention display unit structure plane graph and corresponding to Fig. 4 A;
Fig. 7 be illustrate third embodiment of the invention display unit structure plane graph and corresponding to Fig. 4 A;
Fig. 8 A and 8B illustrate the display unit of fourth embodiment of the invention, and Fig. 8 A is the plane graph corresponding to Fig. 4 A, and Fig. 8 B is the cross sectional view along the I-I line intercepting of Fig. 8 A;
Fig. 9 be illustrate fifth embodiment of the invention display unit structure plane graph and corresponding to Fig. 4 A;
Figure 10 be illustrate sixth embodiment of the invention display unit structure plane graph and corresponding to Fig. 4 A, easy in order to illustrate in Figure 10, memory and backlight module only are shown;
Figure 11 is the external view that the cell phone structure of seventh embodiment of the invention is shown;
Figure 12 A and 12B are the circuit block diagrams of the liquid crystal indicator of eighth embodiment of the invention;
Figure 13 is the circuit block diagram of the display unit of ninth embodiment of the invention;
Figure 14 is the pie graph of the receiver of tenth embodiment of the invention;
Figure 15 is the cross sectional view that the structure of the semiconductor device in the experiment 1 that is used in test effect experiment of the present invention is shown;
Figure 16 illustrates the curve chart that concerns between experiment 1 result's who shows test effect experiment of the present invention transmissivity and the normalized threshold change rate;
Figure 17 is the cross sectional view that the structure of the semiconductor device in the experiment 2 that is used in test effect experiment of the present invention is shown;
Figure 18 illustrates the curve chart that concerns between experiment 2 results' that show test effect experiment of the present invention projection degree and the normalized threshold change rate;
Figure 19 is the cross sectional view that the structure of the semiconductor device in the experiment 3 that is used in test effect experiment of the present invention is shown;
Figure 20 illustrates the diagram that concerns between experiment 3 results' that show test effect experiment of the present invention transmissivity and the normalized threshold change rate;
Figure 21 illustrates the curve chart that concerns between the thickness of occulter and the transmissivity; And
Figure 22 is the cross sectional view that the conventional semiconductor device structure is shown.
Embodiment
Below will illustrate various embodiment of the present invention.
Occulter can be installed in respectively the storage retaining part above and below.In this case, even light also can avoid stored information to lose from part more than the storage retaining part or following part irradiation.
Be installed in the above and following occulter of storage retaining part and can be by each projection degree of occulter 0.1 or bigger mode install.In this case, more may avoid stored information to lose reliably.
At least one can thickness be that 3nm is to 1mm in the occulter.In this case, can in the commercialization of occulter, guarantee shading character and suppress the increase of integral thickness.
Nonvolatile memory can be the electric charge maintenance.Keep memory for electric charge, under light-struck situation, be difficult to keep stored information.In this kind memory, can be by stopping that with occulter light keeps stored information.
At least one can be formed by band (tape) or sheet (sheet) in the occulter.Because band or sheet do not need expensive vacuum equipment or exposure sources, it can cheap and easily form.
Semiconductor device of the present invention comprises further and is formed on the above or following backlight module of insulated substrate that wherein at least one can be formed by band or sheet in the occulter, and can be between insulated substrate and backlight module by the occulter of being with or sheet forms.Thereby, can use the occulter of double-faced adhesive tape as memory, this double-faced adhesive tape is adhered to backlight module with insulated substrate, thereby has eliminated necessity of independent installation occulter.
Semiconductor device of the present invention comprises that further covering wherein forms the framework in the zone of storage retaining part, this zone is at least one that lays respectively in the above and following zone of insulated substrate, wherein at least one can be formed by band or sheet in the occulter, and can be between insulated substrate and framework by the occulter of being with or sheet forms.In this case, can use the occulter of double-faced adhesive tape as memory, this double-faced adhesive tape is adhered to framework with insulated substrate, thereby has eliminated necessity of independent installation occulter.
Semiconductor device of the present invention further comprises branch distribution wire (distributingcable) on the insulated substrate and at least one in the electronic unit, wherein at least one can be formed by band or sheet in the occulter, and can extend to electronic unit and the branch distribution wire zone at least one from the zone more than the storage retaining part continuously by band or the occulter that forms of sheet.Therefore, will be adhered to electronic unit or divide adhesive tape or sheet on the distribution wire to extend to memory, and the band or the sheet of this extension paste on the memory, thereby can use this band or the sheet occulter as memory, and have eliminated necessity of independent installation occulter.
Semiconductor device of the present invention further comprises the subtend substrate, and it is positioned at above or the following and relative insulated substrate setting of insulated substrate, and wherein at least one can be positioned on the subtend substrate in the occulter.Thereby occulter is pre-formed on subtend substrate that will be bonding, and when the subtend base plate bonding was to insulated substrate, occulter was also inevitable bonding, thereby has eliminated necessity of independent bonding occulter.
At least one can comprise black matrix in the occulter.In this case, eliminated necessity of independent installation occulter.
At least one can be formed by photosensitive resin in the occulter.Thereby, do not need etching step and can use photoetching or ink-jet system easily to form occulter to distinguish with the occulter that uses metal film.
At least one can form by using coating material or resin in the occulter.Thereby occulter can easily be formed on the bottom of the recess of jog.
Coating material or resin can comprise silicones.Thereby can suppress the infiltration of water.
At least one comprises mineral black in the occulter, and this mineral black can comprise at least one that choose from the group black by carbon black, graphite, cupric oxide, manganese dioxide, nigrosine, perylene, that titanium is black, Hua Jing is black, active carbon, ferrite, magnetic iron ore, chromium oxide, iron oxide, molybdenum bisuphide, chromium complex, the black dyestuff of composite oxides base and the organic black dyestuff of anthraquinonyl are formed.Thereby can reduce the transmissivity of occulter.
At least one can comprise electronic unit, divide distribution wire or electronic-component-mounting board in the occulter.In this case, these required traditionally constituent elements can be used as occulter.
At least one can comprise the framework of overlay area in the occulter, forms the storage retaining part in this zone, and this zone is at least one that lays respectively in the above and following zone of insulated substrate.At least one can comprise around the luminous component of backlight module or the framework of photoconduction part in the occulter.By so framework is set in place in more than the memory or below, this framework can be to memory as occulter.
Nonvolatile memory can be contained in the shell, and at least one can comprise this shell in the occulter.By so shell is set in place in more than the memory or below, this shell can be to memory as occulter.
At least one can have the structure of wherein piling up a plurality of occulters in the occulter.By having the structure of wherein piling up a plurality of occulters, can strengthen shaded effect.
Semiconductor device of the present invention may further include the TFT that is formed on the insulated substrate.Thereby, can form memory that constitutes semiconductor device and the TFT that constitutes display unit simultaneously, and reduce cost.
The present invention also provides a kind of display unit (LCD, OLED display etc.) that comprises above-mentioned semiconductor device.
In above-mentioned display unit, the gamma corrected values of the electrode of subtend substrate or voltage correction value can be stored in the nonvolatile memory.Thereby, can will be stored in data storing in the external storage section in constituting the substrate of display unit.Therefore, can reduce the parts number of external storage section.
The present invention also provides a kind of mobile device (laptop computer, cell phone, handheld terminal etc.) that comprises above-mentioned display unit.Thereby, construct the parts number that laptop computer or cell phone or handheld terminal reduce external storage section by using this display unit, can be so that mobile device becomes low profile weight (low-profile) or that reduce mobile device.
Here the various embodiment that illustrate can combination with one another.
Below embodiments of the invention will be described with reference to the accompanying drawings.Shown in the figure or following examples in the content described only be in order to demonstrate the invention, and scope of the present invention is not limited to the description in these accompanying drawings or following examples.
1. first embodiment
The first embodiment of the present invention will be described the different aspect of semiconductor device 1 with reference to the accompanying drawings.Fig. 1 is the cross sectional view of structure that the semiconductor device 1 of first embodiment is shown.
The semiconductor device 1 of first embodiment comprises insulated substrate 3, be formed on insulated substrate more than 3 and have the storage retaining part 4 nonvolatile memory 5, and at least one occulter that covers upside, downside or the both sides of storage retaining part 4, wherein in the occulter at least one projection degree with occulter be 0.1 or bigger mode install, the projection degree of occulter defines by (from the length of the occulter of storage retaining part 4 projections)/(distance between occulter and the storage retaining part 4).
In first embodiment, occulter be installed in respectively the storage retaining part 4 or more with below.Hereinafter, be installed in the occulter of storage retaining part more than 4 and be called occulter 7, be called occulter 9 down and be installed in the occulter of storage retaining part below 4.In addition, one of last occulter 7 and following occulter 9 can be removed.
In first embodiment, occulter 7 and 9 all with each projection degree of occulter 7 and 9 all be 0.1 or bigger mode install.Yet occulter 7 and one of 9 can have the projection degree less than 0.1.
The constituent element of semiconductor device 1 will be described hereinafter.
1-1. insulated substrate
1-2. nonvolatile memory
As long as memory 5 has storage retaining part 4, the structure of memory 5 is not limited especially.
Fig. 2 is the cross sectional view that the structure of semiconductor device 1 is shown.
Fig. 2 illustrates the structure of memory 5, and its gate electrode 12 spatially separates with storage retaining part 4.In the structure of Fig. 2, memory 5 has semiconductor layer 6, gate insulating film 14, gate electrode 12, distribution part or bottom electrode part 16, storage retaining part 4 and distribution part or top electrode part 17 on insulated substrate 3.In semiconductor layer 6, channel region is right after and is formed on gate electrode below 12, and source/drain regions is formed on the both sides of channel region.Source area or drain region are electrically connected to distribution part 16.Hereinafter the FeRAM of Miao Shuing, PRAM, RRAM and MRAM have the structure of Fig. 2 usually.In the structure of Fig. 1 and 2,, so store retaining part 4 and need use occulter 7 and 9 to cover if, all may lose the problem of stored information with rayed storage retaining part 4.In addition, though not shown in Fig. 1 and 2, the expectation dielectric film is formed between occulter 7 and distribution part or the top electrode part 17.By forming this dielectric film, can on dielectric film, form electric wire, and can improve the flexibility of the design of semiconductor device 1.In addition, by on electric wire, forming another dielectric film to use this dielectric film as diaphragm, can protect storage and other elements that are formed on more than the insulated substrate.
In the present invention, nonvolatile memory 5 refers to the memory that can keep stored information than DRAM more longways, and its retention time is 1 hour or longer.Be used to keep retention time of stored information to be preferably 1 day or longer, 1 all or longer, January or longer, 1 year or longer or 10 years or longer.The desirable retention time is 10 years or longer.Yet, how being used according to semiconductor device 1, the retention time that has certain situation can be not cause any problem less than 1 year.In addition, even memory has the ability of keep stored information about 1 day or 1 hour, also may write the time that keeps stored information longer such as additional if necessary by carrying out refresh operation.
The type of memory 5 is not limited especially, and memory 5 can be that electric charge keeps memory, uses ferroelectric memory (for example FeRAM), uses the memory (for example MRAM) of magnetic material, resistance (resistance) is treated to the memory (for example PRAM, RRAM) of maintenance information and uses any in the memory of carbon nano-tube.Even the not limited especially reason of the type of memory 5 is to use the memory 5 of above any kind all problem may take place, make stored information lose or can not normally read owing to noise current makes stored information such as irradiation owing to light.
1-3. last occulter and following occulter
In the occulter 7 and 9 at least one projection degree with occulter be 0.1 or bigger mode install, the projection degree of occulter by (from the occulter 7 of storage retaining part 4 projections and/or 9 length L)/(occulter 7 and/or 9 and storage retaining part 4 between distance H) define.Experiment showed, by in occulter 7 and 9 at least one is installed in this way, significantly improved the effect that occulter 7 and 9 are installed.The projection degree is unrestricted and be preferably big substantially.Yet, to consider miniaturization, reduce weight and the framework that narrows, the projection degree is preferably 100 or littler.The projection degree is for example 0.1 to 10000, particularly for example 0.1,0.5,1,2,3,4,5,10,50,100,1000 and 10000.The projection degree can have the value between any adjacent two values in the numerical value described above.In addition, following occulter 9 among similar Fig. 1 and the last occulter 7 among Fig. 2, when the projection degree of occulter 7 and 9 between the right side of storage retaining part 4 and left side not simultaneously, the projection degree of smaller value is corresponding to " projection degree " of the present invention.
As long as occulter 7 and 9 can weaken the light intensity that is applied to storage retaining part 4, its structure is not limited especially.Occulter 7 and 9 preferably has 50% or littler average light transmissivity when 300 to 700nm wavelength, and more preferably have 40% or littler, 30% or littler, 20% or littler, 10% or littler, 5% or littler, 1% or littler or 0.1% or littler.Most preferred transmissivity is 0.01% or littler.To be occulter can more effectively stop light applying under the environment of high light to the reason of preferred low transmissivity.
Occulter 7 and 9 preferably includes light screening material.This light screening material is a mineral black for example, and this mineral black comprises from choosing by carbon black (furnace black, channel black, acetylene carbon black, thermals, dim etc.), graphite, cupric oxide, manganese dioxide, nigrosine, perylene is black, titanium is black, Hua Jing is black, active carbon, ferrite (non magnetic ferrite, magnetic ferrites etc.), magnetic iron ore, chromium oxide, iron oxide, molybdenum bisuphide, chromium complex, the black dyestuff of composite oxides base and the organic black dyestuff of anthraquinonyl are formed the group at least one.
In addition, light screening material can be metallic particles or metal film.The examples of materials of metallic particles or metal film comprises 1 family's element such as lithium, sodium, potassium, rubidium, caesium of periodic table etc.; 2 family's element such as magnesium of periodic table, calcium, strontium, barium etc.; 3 family's element such as scandiums of periodic table, yttrium, lanthanide series (lanthanum, cerium etc.), actinides (actinium etc.) etc.; 4 family's element such as titaniums of periodic table, zirconium, hafnium etc.; 5 family's element such as vanadium of periodic table, niobium, tantalum etc.; 6 family's element such as chromium of periodic table, molybdenum, tungsten etc.; 7 family's element such as manganese of periodic table, technetium, rhenium etc.; 8 family's element such as iron of periodic table, ruthenium, osmium etc.; 9 family's element such as cobalts of periodic table, rhodium, iridium etc.; 10 family's element such as nickel of periodic table, palladium, platinum etc.; 11 family's element such as copper of periodic table, silver, gold etc.; 12 family's element such as zinc of periodic table, cadmium, mercury etc.; 13 family's element such as aluminium of periodic table, gallium, indium, thallium etc.; 14 family's element such as tin of periodic table, lead etc.; 15 family's element such as antimony of periodic table, bismuth etc.On the other hand, the example of alloy comprises stainless steel, corronil, brass, nichrome, iron-nickel alloy, admiro, gold copper, leypewter, silver-colored leypewter, nichrome, copper-manganese-nickel alloy and nicalloy.
Occulter 7 and 9 thickness are not limited especially, but are preferably 3nm to 1mm or littler.It is in this case, can suppress the increase of semiconductor device thickness when guaranteeing sufficient shading character to 1mm or littler reason that occulter 7 and 9 thickness are preferably 3nm. Occulter 7 and 9 thickness is, for example, and 3nm, 5nm, 10nm, 20nm, 50nm, 100nm, 1 μ m, 5 μ m, 10 μ m, 50 μ m, 0.1mm, 0.2mm, 0.3mm, 0.4mm, 0.5mm, 0.6mm, 0.7mm, 0.8mm, 0.9mm and 1mm.Occulter 7 and 9 thickness can be the values between any adjacent two values in the above-mentioned numerical value.Occulter 7 and 9 thickness can be mutually the same, also can differ from one another.
The method that is used to form occulter 7 and 9 is not limited especially, and the example of method comprises that the whole bag of tricks is such as pasting band or sheet (below be called " band or analog "), applying the coating material that comprises light screening material or resin etc.The method that is used to form occulter 7 can be identical with the method that is used to form occulter 9, also can be with occulter 9 different.For example, occulter 7 and one of 9 can be by pasting that band or analog form and another occulter can form by other method.
In addition, occulter 7 and 9 can be formed in the display module, perhaps can be formed on beyond the display module.
Display module refers to and comprises its above framework, the electronic unit of the insulated substrate of storage retaining part 4, the subtend substrate that is adhered to this insulated substrate, backlight module, protection insulated substrate and module of dividing distribution wire of forming.
The occulter that is formed in the display module refers to, for example, contact the occulter that forms with the parts that constitute display module, with the occulter of the state formation that is interposed in (for example, between backlight module and the insulated substrate, between insulated substrate and subtend substrate) between any two parts that constitute display module or the occulter that self constitutes by the parts that constitute display module.When occulter is formed in the display module, because this occulter can have the effect and the occulter that can reduce diffraction of light can carry out effective shading in the shading of carrying out storage retaining part 4 relatively near the position of storage retaining part 4.
Be formed on display module occulter in addition and refer to the occulter that constitutes by for example parts of the shell of fixed display panel module or equipment.In this case, because light can reduce production costs with self the stopping and need not newly add parts of these parts or shell.
In addition, can not only install and be formed on the occulter in the display module but also the occulter that is formed on beyond the display module is installed.In this case, can realize more efficiently shaded effect.
(1) by the situation of band or the occulter that forms of analog
Here, will describe occulter 7 and 9 in detail by situation about being with or analog forms.
When occulter 7 and 9 by band or analog when forming, occulter 7 and 9 formation need expensive vacuum equipment or exposure sources, and the formation of occulter is cheap and easy.The method example that is used to form occulter comprises the use exposure sources such as the stepping exposure machine, perhaps uses vacuum equipment to form occulter in CVD system or sputtering system.Yet in these methods, because apparatus expensive, the cost that forms occulter becomes too high.But, by pasting bonding bringing in the situation that forms occulter, because need expensive equipment and can under low cost, easily form occulter.
Here, will use Fig. 3 A to describe by band or the occulter 7 that forms of analog and 9 structure to 3E.Occulter 7 and 9 can have Fig. 3 A any in the structure shown in the 3E.In addition, occulter 7 and 9 structure can be mutually the same or can be differed from one another.Fig. 3 A represents with being the bonding situation of bilateral and Fig. 3 D represents with being one-sided bonding situation to 3E to 3C.
In the structure of Fig. 3 A, occulter 7 and 9 comprises black layer 18a and the first adhesive layer 18b and the second adhesive layer 18c, and the first adhesive layer 18b and the second adhesive layer 18c are installed on the two sides of black layer 18a.
In the structure of Fig. 3 B, white layer 18d is installed between the black layer 18a and the first adhesive layer 18b.Have the band of such structure or analog and be suitable for use as following occulter 9 between backlight module and insulated substrate 3.By according to black layer 18a in insulated substrate 3 sides and white layer 18d is provided with band or analog in the mode of backlight module side, the light of backlight module from white layer 18d reflection reducing unnecessary light absorption, thereby improve brightness.By black layer 18a is installed, can absorb unnecessary diffraction light, to avoid when diffraction light is diffracted the storage retaining part 4 of the bright memory 5 of illumination on memory 5.
In the structure of Fig. 3 C, occulter has metal level 18e between black layer 18a and white layer 18d.Metal level 18e is formed by for example aluminium.Because metal level 18e has high shading character usually, integral thickness can attenuate.
Fig. 3 D illustrates the structure that removes the second adhesive layer 18c from the structure of Fig. 3 A, and Fig. 3 E illustrates the structure that removes the second adhesive layer 18c and white layer 18d from the structure of Fig. 3 C.
Various jointing materials such as acrylic pressure-sensitive adhesive, rubber contact adhesive, silicone pressure sensitive adhesives etc. can be used among the first adhesive layer 18b and the second adhesive layer 18c.The expectation thickness of adhesive layer is about 20 μ m.By adhesive layer is worn black certainly, also can strengthen shaded effect.
About the definition of term white and black, color can be represented by colourity (chromaticity).Colourity can be represented by the L of the Lab that measured by colorimeter (colorimeter).White refer to wherein the colourity measured by colorimeter the scope of L be 80 or bigger color and black refer to that wherein the colourity measured by colorimeter is 40 or littler color in the scope of L.
(2) occulter is by applying the situation that the coating material that comprises light screening material or resin form
Occulter 7 and 9 can form by for example applying the coating material or the resin that comprise light screening material.
The coating material that is used to form occulter 7 and 9 prepares by for example above-mentioned light screening material (for example carbon black) being mixed in the solvent.The content of light screening material be for example weight 0.1 to 10%.The concrete content of light screening material is, for example, and 0.1,0.5,1,5 or 10% of weight.The content of light screening material can be the value between any adjacent two values in the above-mentioned numerical value.Occulter 7 and 9 can form by nozzle being shifted near memory 5 and coming that by spraying (spray) memory 5 is applied coating material.After the spraying, because coating material is a liquid, it infiltrates the base angle of step or the bottom of depression immediately, and is dried subsequently to become occulter 7 and 9.Therefore, can provide coating material, and therefore can easily form occulter at the base angle of step or the bottom of depression to the base angle of step or the bottom of depression.The example of applying method comprise by ink-jet system or with the brush apply.
In addition, will be used to form the resin of occulter 7 and 9 by for example above-mentioned light screening material (for example mineral black (for example carbon black)) and solvent being prepared in resin (for example silicones).The content of light screening material be for example weight 0.1 to 30%.The concrete content of light screening material is, for example, and 0.1,0.5,1,5,10,20 or 30% of weight.The content of light screening material can be the value between any adjacent two values in the above-mentioned numerical value.Effect as form occulter with resin has: because the occulter 7 and 9 that forms comprises resin protected storage 5 be not subjected to external pressure effect, strengthen the effect of chemical resistance (chemical resistance) and improve moisture resistance and the effect of water-resistance.In addition and since the occulter that forms by resin the same with the occulter that forms by coating material initial be liquid, easily form occulter in can or caving at the base angle of step.Being used to form resin pattern comprises with the example of the method that becomes these occulters 7 and 9: inject resin resin placed on the storage area, to apply resin and with nozzle resin is sprayed by ink-jet system or with brushing by needle nozzle.The example of resinous type comprises plastic polymer (polyamide, polyimide resin, urethane resin, silicones, phenoxy resin etc.), thermosetting resin (epoxy resin, phenolic resins, polyimide resin, silicones) and acrylic resin.In addition, if desired, can add coupling agent, diluent, fire retardant, defoamer, curing agent, adhesive polymer, pigment or filler to resin.Coating material or resin preferably include silicones.Thereby can suppress the infiltration of water.
In addition, be 50 μ m or littler occulter in order in the formation of occulter 7 and 9, to form thickness, the method that is used to form the occulter film of use CVD (chemical vapour deposition (CVD)) method or sputtering method is arranged.It is 10nm or littler film that the formation of the film by the CVD method is particularly suitable for forming thickness.In addition, be 50 μ m or littler occulter in order to form thickness, can easily obtain to have the occulter of low transmissivity by using above-mentioned metal film.In the middle of other, aluminium is best suited for as metal material.The film occulter forms with aluminium, and measures the transmissivity of occulter.As the method that forms film is the CVD method, wherein use dimethyl hydrogenation aluminium (dimethyl aluminum hydride, DMAH) and the mist of hydrogen.The film formation time be adjusted to thickness be among 0nm (not forming film), 3nm, 5nm, 10nm, 20nm, 50nm and the 100nm each with the preparation sample.Film uses spectrophotometer to measure to determine average transmittance in the transmissivity of 300 to 800nm wavelength.Measurement result is shown in Figure 21.Obviously as seen, even when thickness is 3nm, the transmissivity of film also can be reduced to 50% from the result.Therefore, can obtain shaded effect.In addition, it is said owing to can obtain more effectively shading by occulter being thickened to 10nm or the bigger shaded effect (transmissivity is 20% or littler) that more effectively obtains.Therefore in addition,, can further strengthen shaded effect and transmissivity and become almost nilly, can bring into play the most effective shaded effect by occulter being thickened to 50nm or bigger.
Like this, material and production method about occulter have various situations, but as long as occulter can be realized the shaded effect expected, its material and production method are not limited especially.
2. second embodiment
The second embodiment of the present invention will be described display unit (liquid crystal panel module) to 4C with reference to figure 4A.Fig. 4 A and 4B are plane graph and lateral side view, and Fig. 4 C is the cross sectional view along the I-I line intercepting of Fig. 4 A.In Fig. 4 B, saved backlight module 11 for the ease of diagram.
The display unit of second embodiment has the semiconductor device 1 of first embodiment.Backlight module 11 is positioned at insulated substrate below 3, and following occulter 9 is between insulated substrate 3 and backlight module 11.The subtend substrate 13 of insulated substrate 3 settings is positioned at insulated substrate more than 3 relatively.
The constituent element of semiconductor device 1 below will be described.
2-1. insulated substrate
The TFT (not shown) is formed on the insulated substrate 3 with the form of array.The branch distribution wire (for example flexible printed circuit board (FPC), flexible flat electric wire (FFC) etc.) 15 that is used to send/receive the shows signal of pixel is electrically connected to the TFT that is formed on the insulated substrate 3.In a second embodiment, (MONOS type) memory 5 and TFT are formed on the insulated substrate 3.Memory 5 and TFT are by using thin semiconductor layer to be formed on the insulated substrate 3.Just have storage retaining part 4, memory 5 is different with TFT.Memory 5 can be made in identical factory with TFT.Therefore, there is no need to transform (retrofit) memory after TFT is formed on the insulated substrate 3, this facilitates and reduces cost and the miniaturization semiconductor device.
2-2. backlight module
2-3. subtend substrate
2-4. last occulter and following occulter
As an example, last occulter 7 is the single face adhesive tapes shown in Fig. 3 D or 3E.Last occulter 7 is adhered to the storage retaining part 4 of insulated substrate 3 with overlaying memory 5.In this case, last occulter 7 is preferably pasted from the zone of minute distribution wire more than 15 and is extended to the zone of memory more than 5 continuously.Therefore, can suppress peeling off of branch distribution wire 15.In addition, also be that last occulter 7 can form the zone that extends to the branch distribution wire from the zone of storage retaining part more than 4 of memory 5 continuously when when applying the coating material that comprises light screening material and resin and form occulter 7.Also can suppress peeling off of branch distribution wire 15 in this case.
In addition; when being used to protect the framework of insulated substrate 3, installation (covers the zone of insulated substrate more than 3; form storage retaining part 4 in this zone) time; preferably as Fig. 3 A to the last occulter 7 that forms by double-faced adhesive tape shown in the 3C between this framework and insulated substrate 3, said frame is adhered to insulated substrate 3.In this case, last occulter 7 can be served as the role of bonding and shading simultaneously.
In addition, as an example, following occulter 9 is by forming to the double-faced adhesive tape shown in the 3C as Fig. 3 A.In this case, be arranged between backlight module 11 and the insulated substrate 3, backlight module 11 can be adhered to insulated substrate 3 by descending occulter 9.In this case, following occulter 9 can be born the role of bonding and shading simultaneously.
In a second embodiment, the thickness limits of occulter 7 and 9 is high especially at 1mm or littler necessity.Occulter 7 and 9 thickness need be limited in 1mm or littler reason as follows.In recent years, constantly realized low profile and lighter electronic equipment, and for the demand height of low profile electronic unit.Therefore, occulter need form thin as far as possible.Consider that the thickness of occulter need be 1mm or littler such as the thickness of the electronic unit that centers on nonvolatile memory of IC chip, branch distribution wire etc.Therefore, by with the thickness limits of occulter at 1mm or littler, can suppress because the increase of the entire equipment thickness that occulter causes is installed.
Thickness is preferably 1mm or littler reason will be described as an example with Fig. 4 C.Usually, forming the insulated substrate 3 of TFT or the thickness of subtend substrate 13 on it is about 0.7mm.In the situation of display panels, paste insulated substrate 3 or subtend substrate 13 such as the blooming (not shown) of polarizing coating, optical compensation films etc.Therefore, thickness becomes near about 1mm.That is to say that producing highly is the step of about 1mm on subtend substrate 13.Therefore, if single face adhesive tape or sheet do not have the thickness of shoulder height or littler (1mm or littler), then adhesive tape is outstanding from the top side of subtend substrate, the attenuate of this infringement panel.In the future, increase owing to predict the trend of low profile panel, occulter only need be thinner than 1mm.
In addition, at this moment, the thickness (comprising blooming) of subtend substrate has been described as an example to 1mm or the littler thin band or the needs of sheet, but carried out energetically the research and development of various electronic units is installed in the zone that has memory 5.In the situation that identical band or sheet and these electronic units are bonded together, the problem of the size/height of electronic unit is arranged equally, and band or sheet need become thinner with the size that satisfies electronic unit/highly.For example, be 1mm even work as the height of the step of subtend substrate, if the height of electronic unit is 0.9mm, band or sheet need be 0.1mm or littler so.Like this, band or sheet need come attenuate according to peripheral part environment.
In addition, as shown in Figure 5, when electronic unit 37 is installed on the insulated substrate 3, the last occulter 7 preferred zones that extend to electronic unit 37 from the zone of storage retaining part more than 4 of memory 5 continuously.In this case, can obtain to suppress the effect that electronic unit 37 damages owing to static and the effect of shading.Electronic unit 37 is IC chips for example, and the IC chip comprises encapsulation (molding (mold) encapsulation, ceramic packaging) IC chip and do not encapsulate the IC chip.In packaged electronic components 37 not, the necessity of shading is big especially and to use benefit of the present invention be big.
3. the 3rd embodiment
The third embodiment of the present invention will be described display unit with reference to figure 6 and 7.Fig. 6 and 7 is respectively the plane graph corresponding to Fig. 4 A.
The display unit of the 3rd embodiment is similar to the display unit of second embodiment, but the difference of the display unit of itself and second embodiment is that at least one comprises electronic unit in occulter 7 and 9, divides distribution wire or electronic-component-mounting board.Fig. 6 illustrates and wherein goes up the example that occulter 7 comprises electronic unit, and Fig. 7 illustrates and wherein goes up the example that occulter 7 comprises the branch distribution wire.
Electronic unit among Fig. 6 is the IC chip of silicon, and as an example, it is the gate drivers of the display pixel TFT of panel.In Fig. 6, owing to comprise that the last occulter 7 of electronic unit is positioned at the top of the storage retaining part 4 of memory 5, does not shine directly into the storage retaining part 4 of memory 5 from above light.In addition, the last occulter 7 that comprises electronic unit is for example used anisotropic conductive film (ACF) to adhere to insulated substrate 3 and is electrically connected to the TFT that is formed on the insulated substrate 3.The last occulter 7 that comprises electronic unit can adhere to insulated substrate 3 by welding.In addition, the IC chip is not limited to as gate drivers as the use of electronic unit, but can be used as source electrode driver etc.In addition, electronic unit is not limited to the IC chip that formed by silicon, but can implement any electronic unit as long as this electronic unit can adhere to insulated substrate.In addition, also can implementation method, wherein by being installed on the insulated substrate 3 forming the device that a plurality of electronic units obtain on the plate of polyimides.
As an example, the branch distribution wire among Fig. 7 is flexible printed circuit board (FPC) and is electrically connected to the TFT that is formed on the insulated substrate 3.In Fig. 7, owing to comprise that the last occulter 7 of branch distribution wire is set to the zone of storage retaining part more than 4 of overlaying memory 5, does not shine directly into the storage retaining part 4 of memory 5 from above light.
In addition, because the FPC electric wire often is to be formed by thin polyimides, often be difficult to transmissivity is restricted to a few percent or littler.Therefore, polyimides can comprise above-mentioned light screening material.In addition, because copper etc. is used for the conductive wires part on the FPC, can form copper film patterns or FPC is set in the mode of storage retaining part more than 4 that copper film is positioned at memory 5.Alternatively, do not consider flexible printed circuit board (FPC), can use another kind of distribution wire such as the flexible flat electric wire (FFC) etc. that divides.
4. the 4th embodiment
The fourth embodiment of the present invention will be described display unit with reference to figure 8A and 8B.Fig. 8 A is the plane graph corresponding to Fig. 4 A, and Fig. 8 B is the cross sectional view along the I-I line intercepting of Fig. 8 A.In addition, in Fig. 8 A, occulter 7 is installed on the bottom surface of subtend substrate 13, but for the purpose of representing its position in plane graph, occulter 7 is shown through subtend substrate 13 and can sees.
The display unit of the 4th embodiment is similar to the display unit of second embodiment, but the difference of the display unit of itself and second embodiment mainly be subtend substrate 13 extend to memory more than 5 the zone and go up occulter 7 and be formed on the subtend substrate 13.Last occulter 7 comprises, for example, black matrix, this black matrix are around pixel or constitute the point 40 of this pixel or center on pixel or constitute the framework of set of the point 40 of this pixel.
In the structure of the 4th embodiment, by forming occulter 7 on the subtend substrate 13 in advance, and subsequently the top side of subtend substrate 13 (forming the surface of black matrix on it) is adhered to the top side (surface of formation memory or TFT it on) of insulated substrate 3, can make occulter 7 be positioned at the storage retaining part of memory 5 more than 4.
In addition, when last occulter 7 comprised black matrix, last occulter 7 had the function that stops light and improve contrast simultaneously.
Also be useful on the method that forms black matrix by the processing in photoetching and etch process, but the viewpoint from reducing cost uses preferably photosensitive resin to form black matrix.
5. the 5th embodiment
The fifth embodiment of the present invention will be described with reference to Figure 9 display unit.Fig. 9 is the plane graph corresponding to Fig. 4 A.
The display unit of the 5th embodiment is similar to the display unit of second embodiment, comprises the framework that covers the zone of insulated substrate 3 or more but the difference of the display unit of itself and second embodiment is occulter 7, forms in this zone and stores retaining part 4.
Said frame is for example to protect the framework of the display floater that comprises insulated substrate 3 and subtend substrate 13, and so-called bezel (bezel).Be arranged on the storage retaining part more than 4 by the last occulter 7 that will comprise bezel, can avoid shining directly into storage retaining part 4 from above light.
Usually, for example, bezel is formed and is had the thickness of about 0.1mm by unoxidizable alloy.Therefore, bezel has high strength, and can be used as the framework that is used to protect display floater.In addition, because bezel is formed and had the thickness of 0.1mm by unoxidizable alloy, the transmissivity of bezel becomes and is almost 0% to realize sufficient shaded effect.This bezel can be formed by aluminium alloy or titanium alloy.In addition, it can also be formed by resin/plastic, but because the transmissivity that must regulate resin with as occulter, is preferably used mineral black.
6. the 6th embodiment
The sixth embodiment of the present invention will be described with reference to Figure 10 display unit.Figure 10 is the plane graph corresponding to Fig. 4 A.In Figure 10, easy in order to illustrate, memory 5 and backlight module 11 only are shown.
The display unit of the 6th embodiment is similar to the display unit of second embodiment, comprises around the framework of light source 41 and optical plate 43 but the difference of the display unit of itself and second embodiment mainly is down occulter 9.
7. the 7th embodiment
The seventh embodiment of the present invention will be described with reference to Figure 11 cell phone.In Figure 11, cellular shell covers the part except that the display part 45 of the display unit shown in the foregoing description.Because memory 5 is arranged in the part that is covered by shell, cellular shell plays in occulter 7 and 9 effect of at least one.
As for cellular shell, this shell is preferably formed by the resin such as plastics, and from the viewpoint of shading and intensity, expects that it has 0.3mm or bigger thickness.In addition, preferably use dark shell.
In addition, in the 7th embodiment, the act cell phone is an example, but the present invention can implement in any information terminal apparatus, comprising: PDA, such as display device and the automobile stereo system and the auto-navigation system of individual computer monitor, LCD TV etc.
8. the 8th embodiment
The eighth embodiment of the present invention is corresponding to the semiconductor device 1 in the liquid crystal indicator of being used in shown in first embodiment.
Liquid crystal indicator is constructed by liquid crystal is interposed between a pair of substrate, and scan line 512 and holding wire 513 are formed on the substrate shown in Figure 12 A, be scanned line 512 and holding wire 513 region surrounded are appointed as pixel, and provide drive circuit optionally to drive the pixel electrode of corresponding this pixel.Each pixel electrode is oppositely arranged and optionally drives a pixel with the counter electrode that is formed on another substrate, is inserted with liquid crystal between pixel electrode and counter electrode.
The 8th embodiment is characterised in that, forms the semiconductor device 1 shown in first embodiment on the display panel substrate of liquid crystal indicator.In this case, semiconductor device 1 of the present invention is as the device of accumulation image information, for voltage generation circuit provides this image information to apply the counter electrode of voltage to liquid crystal indicator.
More specifically, shown in Figure 12 B, scan line 512 is connected to the gate electrode of pixel TFT 511, and holding wire 513 is connected to a diffusion region (diffusion region) of pixel TFT 511, and pixel electrode 514 is connected to another diffusion region.Pixel electrode 514 and counter electrode 515 are oppositely arranged and are inserted with liquid crystal 516 between described electrode, counter electrode 515 counter plates are public (common).The predetermined voltage that is produced by voltage generation circuit 522 is applied to counter electrode 515.Determine according to the image information that is stored in the storage area 521 that comprises semiconductor device 1 of the present invention by the voltage that voltage generation circuit 522 produces.
The voltage that produces in voltage generation circuit 522 is applied to counter electrode 515 with the flicker (flicker) in the inhibition screen, and this magnitude of voltage should be regulated each panel.This voltage-regulation is carried out by the variable resistance that adjusting adheres to the panel outside usually.By the semiconductor device 1 that comprises first embodiment of the invention, can reduce the cost of external component self and the cost of installation external component.In addition, because the automation of regulating becomes easily, can reduce the inspection cost.In addition, because gate insulating film has simple structure, the quantity that is used to produce the required technology of gate insulating film is few, and therefore semiconductor device 1 of the present invention helps reducing cost.
9. the 9th embodiment
The ninth embodiment of the present invention is the display unit that comprises the semiconductor device 1 shown in first embodiment.The example of display unit comprises liquid crystal panel, organic EL panel etc.
This display unit is characterised in that and also comprises and be provided at the voltage follower circuit on the display panel substrate and be provided at DA transducer on the display panel substrate, and be characterised in that storage data is to determine the correlation (correlation) between (specify) digital tone data and the simulation tonal signaling voltage in the semiconductor device 1 of above-mentioned first embodiment, this voltage follower circuit will output to counter electrode by the voltage that is input to the digital information definition in this voltage follower circuit, and this DA transducer becomes the simulation tonal signaling with the digital tone data transaction.
More specifically, as shown in figure 13, display unit 61 comprises that video data produces circuit 613, and this video data produces circuit 613 video data of digital signal is sent to DA transducer 612.DA transducer 612 converts the video data of digital signal analog signal to and these analog signals is sent to display part 615 by output circuit 614.At this moment, must in DA transducer 612, regulate the correlation between digital tone data and the simulation tonal signaling voltage, be duplicated naturally so that be presented at the color of the image in the display part.Should all regulate this correlation to each lattice (pane).Correlation between digital tone data and the simulation tonal signaling voltage is stored in the storage area 611 that comprises semiconductor device 1 of the present invention.
Correlation between digital tone data and the simulation tonal signaling voltage is stored in the nonvolatile memory chip that adheres to the panel outside usually.By comprising semiconductor device 1 of the present invention, can reduce the cost of external component self and the cost of installation external component.In addition, because the automation of regulating becomes easily, can reduce the inspection cost.In addition, because gate insulating film has simple structure, the quantity that is used to produce the required technology of gate insulating film is few, and therefore semiconductor device 1 of the present invention helps reducing cost.
10. the tenth embodiment
The tenth embodiment of the present invention is the receiver that comprises display unit, this display unit comprises the semiconductor device 1 shown in first embodiment, and the tenth embodiment of the present invention is characterised in that the receiving circuit that forms display unit, receives picture signal, the picture signal circuit that will be supplied to display unit by the picture signal that receiving circuit receives and storage are used for producing the above-mentioned semiconductor device 1 of the needed data of picture signal on the display panel substrate of display unit.
Particularly, as shown in figure 14, receiver 71 comprises display unit (display panels) 711, tuner (tuner) 712, loud speaker 713, control section 714 and antenna terminal 715.Figure 14 illustrates the system that receives wireless signal with antenna, but when signal receives with wired system, and antenna terminal is by wire connection terminal is alternative and tuner is substituted by signal receive section.Display unit 711 comprises semiconductor device 1 of the present invention.Will be output to the magnitude of voltage of counter electrode of liquid crystal panel and the correlation between digital tone data and the simulation tonal signaling voltage can be stored in the nonvolatile memory that is included in this display unit 711.In addition, coded signal sends to display unit, and password is resolved in display floater, thereby can strengthen Information Security, but the key in this situation can be stored in the semiconductor device 1 in the display unit.By comprising such display unit, can realize cheapness and complicated receiver.
11. other
As mentioned above, can implement various light shading methods.Yet, when from the viewpoint of transmissivity or diffraction of light only be difficult to stop that with an occulter light when keeping memory property, can form a plurality of occulters.The occulter that therefore, can prepare the shaded effect that shows expectation.For example, a kind of method is arranged, wherein the occulter of sheet or band is installed on the occulter that is formed by resin.Consider the design constraint in the commercialization, the combination of a plurality of occulters can freely be selected.By having the structure of wherein piling up a plurality of occulters, can strengthen shaded effect.
Various features shown in the foregoing description can combination with one another.If an embodiment comprises a plurality of features, then the certain characteristics of one of a plurality of features or suitable extraction from these features can independent in the present invention or combination enforcement.
12. test effect experiment
Subsequently experiment will be described, with check install occulter 9 down effect, will descend the projection degree of occulter 9 to be set in 0.1 or bigger effect and the effect of installing occulter 7.
12-1. test 1: the effect of occulter down is installed
Experimentize and the effect of occulter 9 down is installed to check.Semiconductor device 1 shown in Figure 15 is used to this experiment.Nonvolatile memory with MONOS structure is used as memory 5.As the transmissivity of following occulter 9, select 17% and 50%.In addition, carry out the experiment that uneasiness loads occulter 9, and its result data transmissivity of being taken as down occulter 9 is the data in 100% the situation.The transmissivity of following occulter 9 changes by the content of light screening material in the occulter 9 under changing.
The transmissivity of following occulter 9 is measured under the following conditions.
Measuring equipment: by the spectrophotometer U-4100 of Hitachi Ltd. manufacturing
Initial wavelength: 700nm
Stop wavelength: 300nm
Sweep speed: 300nm/min
Sampling interval: 0.50nm
Slit: 5.00nm
When the semiconductor device among Figure 15 1 in the time of 1 hour, is estimated normalized threshold change rate (normalized thresholdchange rate) from following occulter 9 sides irradiation by the light that from light intensity backlight is 1000 candelas.The result is shown in Figure 16 in estimation.
Be used in the backlight type that be to use led light source of experiment in 1, and the light of LED is led by optical plate and expands in the plane.This expansion light is adjusted to the less uniform plane light of scrambling by diffusion disk.This diffusion disk is positioned at more than the optical plate.The prismatic lens that is called lens coating is installed in more than the diffusion disk.This prismatic lens is not ineffectually outwards expanded light, but by direction of light being aimed at the place ahead and light forwards being shone.Thereby, the less planar light of a large amount of scramblings that is arranged to extract vertical direction backlight.This layout be used in LCD in conventional backlight identical.
The implication of normalized threshold change rate will be described here, below.
The same with the MONOS type memory of routine, the memory that is used to estimate changes threshold value to differentiate store status by applying voltage.Therefore, when light is applied on the memory, change with the corresponding threshold value of store status." normalized threshold change rate " is expression when when applying amount that voltage makes threshold shift and be normalized to 1, and observed threshold value is returned the parameter of the degree of (change) by illumination.For example, in p type storage device, before threshold value is applying voltage be-1V and threshold value becomes after applying voltage+during 9V, threshold value change rate is 10V.Owing to the changing features of storage device makes this change rate produce mistake to a certain extent, even therefore threshold value change rate is 9.5V or 10.5V, threshold value change rate also all is normalized to 1.Normalized threshold change rate represents that threshold value returns the degree of (change) from normalized value " 1 " by illumination.
When threshold value when the lighting change, before applying voltage, threshold value is returned to-1V side (direction) from+9V.For example when threshold value turn back to+during 4V, shift amount be 5V (+9V subtracts+4V) and this amount be 10V half, 10V is owing to apply the threshold value change rate that voltage causes, so the value of normalized threshold change rate is 0.5.Normalized threshold change rate is that 0 representative does not change from the state that applies behind the voltage, and to be 0.2 representative change 20% from the state that applies behind the voltage to normalized threshold change rate.
With reference to Figure 16, find that normalized threshold change rate diminishes along with the transmissivity reduction of occulter 9 down.This result means that the problem of losing stored information takes place hardly by occulter 9 is installed down.
12-2. test 2: will descend the projection degree of occulter to be set in 0.1 or bigger effect
Experimentize subsequently to check that the projection degree will descend occulter 9 is set in 0.1 or bigger effect.Semiconductor device 1 shown in Figure 17 is used to this experiment.Nonvolatile memory with MONOS structure is used as memory 5.The transmissivity of following occulter 9 is 0.1% or littler.
The projection length L of following occulter 9 changes to-0.17,0,0.08,0.33,0.58,0.83 and 2.08mm.Negative value is illustrated among Figure 17, and the right end position of following occulter 9 is positioned at the left side of dotted line.In addition, compare for 0.001mm and with the projection length of following occulter 9 when being small length when the length (length of side direction among the figure) of the storage retaining part 4 of Figure 17, store retaining part 4 and become complete exposed state, projection length L is-0.17mm.
Distance H between occulter 9 and the storage retaining part 4 remains on 0.7mm.The projection degree of occulter 9 is determined by projection length L/ distance H.
Identical in 1 of other conditions and experiment, and estimation normalized threshold change rate.The result is shown in Figure 18 in estimation.
According to Figure 18, find that at the projection degree be near-0.25, normalized threshold change rate is about 0.19, this is to equate in 100% o'clock with the transmissivity of Figure 16 almost.When the projection degree was 0, normalized threshold change rate was about 0.09, and therefore, owing to brought into play shaded effect and this is the shaded effect of occulter 9, threshold value change rate can reduce over half.
In addition, when the projection degree was 0.1, it is about 0.04 that normalized threshold change rate is reduced to, and the projection degree be in 0 the situation threshold value change rate be reduced to half or littler.This expression is by increasing projection degree to 0.1 or bigger, and the effect that occulter 9 is installed extremely increases.
When the projection degree further increases, normalized threshold change rate further reduces, but obviously find out from Figure 18, normalized threshold change rate the projection degree be 0.1 or bigger zone and projection degree greatly different between less than 0.1 zone, and find that 0.1 is critical value.
In addition, can expect that this also is like this for last occulter 7.
Yet, the value of normalized threshold change rate the projection degree be 0.1 or bigger scope in also change with the projection degree.Further if desired shaded effect, by the projection degree is set in 0.5 or bigger, therefore normalized threshold change rate can be reduced to about ten/in the lump can realize better shaded effect.In addition, be set at 1.0 or when bigger, therefore normalized threshold change rate can be reduced to about 20/in the lump can realize better shaded effect when the projection degree.In addition, when the great shaded effect of needs, when the projection degree is set in 3.0 or bigger, normalized threshold change rate can be more near 0 and this situation be best.
12-3. test 3: the effect of installing occulter
Experimentize and install the effect of occulter 7 with inspection.Semiconductor device 1 shown in Figure 19 is used to this experiment.
In this experiment, (weather is clear and bright, direct sunshine according to and penetrating window glass not) semiconductor device 1 replaced sunlight from last occulter 7 sides backlight shines.
Identical in 1 of other conditions and experiment, and estimation normalized threshold change rate.The result is shown in Figure 20 in estimation.
With reference to Figure 20, when the side direction transmissivity was 100% (not having occulter), normalized threshold change rate was about 0.17, and threshold value change rate tests 1 no better than.
Therefore, find also to keep feature influential to the storage of memory from light with opposite side backlight.At this moment, this experiment is carried out with sunlight.Yet, when applying high light, bring into play this kind influence.
In addition, be that 50% occulter is installed in the sample more than the memory for transmissivity wherein, normalized threshold change rate is about 0.09, and this situation also shows and tests 1 threshold value change rate no better than.When installation had the occulter of 17% transmissivity, normalized threshold change rate was about 0.04, and this situation also shows and tests 1 threshold value change rate no better than.
Like this, find that normalized threshold change rate diminishes along with the reducing of the transmissivity of last occulter 7.This result means that the problem of losing stored information takes place hardly by installing occulter 7.From experiment before, know that the following photomask of backlight side is important, but from current further experiment, experimental verification be important in the shading (room lighting light or outdoor sunlight) of opposition side.Therefore, verified, even even when this memory with the environment that uses cell phone etc. out of doors in or be used in indoors sunlight incident and this memory by light-struck environment in or when being used in indoors the very bright environment, keep out from the occulter of the light of above-mentioned these environment emissions (irradiation) can to the opposite side backlight necessity that becomes.
Claims (25)
1. semiconductor device comprises:
Insulated substrate;
Nonvolatile memory, it is above and have a storage retaining part to be formed on described insulated substrate; And
Two occulters cover the upside and the downside of described storage retaining part respectively, wherein
In the described occulter at least one projection degree with described occulter be 0.1 or bigger mode install, the projection degree of described occulter defines by (from the length of the described occulter of described storage retaining part projection)/(distance between described occulter and the described storage retaining part).
2. semiconductor device according to claim 1, wherein said occulter be installed in respectively described storage retaining part above and below.
3. semiconductor device according to claim 2, wherein be installed in the above and following described occulter of described storage retaining part with each projection degree of described occulter be 0.1 or bigger mode install.
4. semiconductor device according to claim 1, at least one thickness is that 3nm is to 1mm in the wherein said occulter.
5. semiconductor device according to claim 1, wherein said nonvolatile memory are the electric charge maintenances.
6. semiconductor device according to claim 1, at least one is formed by band or sheet in the wherein said occulter.
7. semiconductor device according to claim 1 also comprises being formed on the above or following backlight module of described insulated substrate, wherein
At least one is formed by band or sheet in the described occulter, and
By described band or described described occulter that forms between described insulated substrate and described backlight module.
8. semiconductor device according to claim 1 comprises that also covering wherein forms the framework in the zone of described storage retaining part, and described zone is at least one that lays respectively in the above and following zone of described insulated substrate, wherein
At least one is formed by band or sheet in the described occulter, and
By described band or described described occulter that forms between described insulated substrate and described framework.
9. semiconductor device according to claim 1 also is included in the electronic unit on the described insulated substrate and divides in the distribution wire at least one, wherein
At least one is formed by band or sheet in the described occulter, and
Extend to described electronic unit and the described minute distribution wire the above zone of at least one continuously by described band or the described zone of the described occulter that forms more than described storage retaining part.
10. semiconductor device according to claim 1 also comprises the subtend substrate, its be positioned at described insulated substrate above or below, and described relatively insulated substrate setting, wherein
At least one is positioned on the described subtend substrate in the described occulter.
11. semiconductor device according to claim 10, at least one is made of black matrix in the wherein said occulter.
12. semiconductor device according to claim 10, at least one is formed by photosensitive resin in the wherein said occulter.
13. semiconductor device according to claim 1, at least one forms by using coating material in the wherein said occulter.
14. semiconductor device according to claim 1, at least one forms by using resin in the wherein said occulter.
15. semiconductor device according to claim 14, wherein said resin comprises silicones.
16. semiconductor device according to claim 1, at least one comprises mineral black in the wherein said occulter, and
Described mineral black comprise from the group black by carbon black, graphite, cupric oxide, manganese dioxide, nigrosine, perylene, that titanium is black, Hua Jing is black, active carbon, ferrite, magnetic iron ore, chromium oxide, iron oxide, molybdenum bisuphide, chromium complex, the black dyestuff of compound oxide type and the organic black dyestuff of anthraquinone type are formed, choose one of at least.
17. semiconductor device according to claim 1, at least one comprises electronic unit, divides distribution wire or electronic-component-mounting board in the wherein said occulter.
18. semiconductor device according to claim 1, at least one is made of the framework that covers the zone that wherein forms described storage retaining part in the wherein said occulter, and described zone is at least one that lays respectively in the above and following zone of described insulated substrate.
19. semiconductor device according to claim 1, at least one is by constituting around the luminous component of backlight module or the framework of light guide member in the wherein said occulter.
20. semiconductor device according to claim 1, wherein said nonvolatile memory is contained in the shell, and
At least one is become by described hull shape in the described occulter.
21. semiconductor device according to claim 1, at least one has the structure that a plurality of occulters pile up each other in the wherein said occulter.
22. semiconductor device according to claim 1 also comprises the thin-film transistor that is formed on the described insulated substrate.
23. a display unit comprises semiconductor device according to claim 21.
24. display unit according to claim 23, wherein said semiconductor device also comprises the subtend substrate, it is positioned at above or the following and described relatively insulated substrate setting of described insulated substrate, and the gamma corrected values of the electrode of described subtend substrate or voltage correction value are stored in the described nonvolatile memory.
25. a mobile device comprises display unit according to claim 23.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007297047A JP4592739B2 (en) | 2007-11-15 | 2007-11-15 | Display device, portable device |
| JP297047/07 | 2007-11-15 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101436596A CN101436596A (en) | 2009-05-20 |
| CN101436596B true CN101436596B (en) | 2011-04-06 |
Family
ID=40640951
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2008101760798A Expired - Fee Related CN101436596B (en) | 2007-11-15 | 2008-11-11 | Semiconductor device, display device and mobile device |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US8040483B2 (en) |
| JP (1) | JP4592739B2 (en) |
| CN (1) | CN101436596B (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5729295B2 (en) * | 2009-04-15 | 2015-06-03 | 日本電気株式会社 | Waterproof structure |
| JP5833411B2 (en) * | 2011-11-11 | 2015-12-16 | ルネサスエレクトロニクス株式会社 | Semiconductor device, manufacturing method thereof, and liquid crystal display device |
| JP5927039B2 (en) * | 2012-05-28 | 2016-05-25 | 富士フイルム株式会社 | Electronic endoscope apparatus and imaging module thereof |
| JP2015216072A (en) * | 2014-05-13 | 2015-12-03 | 株式会社ジャパンディスプレイ | Organic el device and method for manufacturing the same |
| KR102158811B1 (en) * | 2018-07-03 | 2020-09-22 | 주식회사 엘엠에스 | Optical disc for fingerprint recognition sensor and optical filter including the same |
| JP7415638B2 (en) | 2020-02-13 | 2024-01-17 | Ｔｏｐｐａｎホールディングス株式会社 | Power supply mechanism and light control body |
| CN112909554B (en) * | 2021-02-22 | 2022-09-13 | 成都天马微电子有限公司 | Antenna and manufacturing method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6081018A (en) * | 1998-06-05 | 2000-06-27 | Nec Corporation | Solid state image sensor |
| CN1652339A (en) * | 2004-02-04 | 2005-08-10 | 日本电气株式会社 | Nonvolatile semiconductor memory and manufacturing method for the same |
| CN1964052A (en) * | 2005-11-11 | 2007-05-16 | 松下电器产业株式会社 | Semiconductor memory and method for manufacturing the same |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4294118B2 (en) * | 1997-08-19 | 2009-07-08 | 株式会社半導体エネルギー研究所 | Display device and method for manufacturing display device |
| JPH1172611A (en) * | 1997-08-28 | 1999-03-16 | Fuji Photo Film Co Ltd | Production of pixel sheet having black matrix and photosensitive transfer sheet used for the method |
| JP4531194B2 (en) * | 1999-04-15 | 2010-08-25 | 株式会社半導体エネルギー研究所 | Electro-optical device and electronic apparatus |
| JP2000155313A (en) * | 2000-01-01 | 2000-06-06 | Semiconductor Energy Lab Co Ltd | Active matrix liquid crystal display device |
| JP3515724B2 (en) | 2000-01-13 | 2004-04-05 | Ｎｅｃエレクトロニクス株式会社 | Product manufacturing management method and manufacturing management system |
| JP4666783B2 (en) * | 2000-02-01 | 2011-04-06 | 株式会社半導体エネルギー研究所 | Method for manufacturing semiconductor device |
| JP3823678B2 (en) * | 2000-04-05 | 2006-09-20 | セイコーエプソン株式会社 | Electro-optic device |
| GB2364823A (en) | 2000-07-12 | 2002-02-06 | Seiko Epson Corp | TFT memory device having gate insulator with charge-trapping granules |
| JP2002175056A (en) * | 2000-12-07 | 2002-06-21 | Hitachi Ltd | Liquid crystal display |
| JP4776801B2 (en) * | 2001-04-24 | 2011-09-21 | 株式会社半導体エネルギー研究所 | Memory circuit |
| JP4374812B2 (en) * | 2001-08-30 | 2009-12-02 | セイコーエプソン株式会社 | Electro-optical device substrate manufacturing method, electro-optical device substrate, electro-optical device, and electronic apparatus |
| JP4479156B2 (en) * | 2003-02-21 | 2010-06-09 | セイコーエプソン株式会社 | Projection display |
| JP4265757B2 (en) * | 2003-07-25 | 2009-05-20 | シャープ株式会社 | Display module and manufacturing method thereof |
| JP2006072060A (en) * | 2004-09-03 | 2006-03-16 | Seiko Epson Corp | Electro-optical device, and electronic device |
| JP2006154317A (en) * | 2004-11-30 | 2006-06-15 | Sanyo Electric Co Ltd | Display device |
| JP2007078776A (en) * | 2005-09-12 | 2007-03-29 | Sanyo Epson Imaging Devices Corp | Electrooptical device, manufacturing method for electrooptical device, and electronic equipment |
| JP5084134B2 (en) * | 2005-11-21 | 2012-11-28 | 日本電気株式会社 | Display device and equipment using them |
| JP5121559B2 (en) * | 2008-05-12 | 2013-01-16 | シャープ株式会社 | Semiconductor device, display device, and portable device |
-
2007
- 2007-11-15 JP JP2007297047A patent/JP4592739B2/en not_active Expired - Fee Related
-
2008
- 2008-10-28 US US12/259,418 patent/US8040483B2/en not_active Expired - Fee Related
- 2008-11-11 CN CN2008101760798A patent/CN101436596B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6081018A (en) * | 1998-06-05 | 2000-06-27 | Nec Corporation | Solid state image sensor |
| CN1652339A (en) * | 2004-02-04 | 2005-08-10 | 日本电气株式会社 | Nonvolatile semiconductor memory and manufacturing method for the same |
| CN1964052A (en) * | 2005-11-11 | 2007-05-16 | 松下电器产业株式会社 | Semiconductor memory and method for manufacturing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JP4592739B2 (en) | 2010-12-08 |
| US8040483B2 (en) | 2011-10-18 |
| JP2009122456A (en) | 2009-06-04 |
| CN101436596A (en) | 2009-05-20 |
| US20090127561A1 (en) | 2009-05-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101436596B (en) | Semiconductor device, display device and mobile device | |
| JP6856802B2 (en) | Display panel | |
| JP7250415B2 (en) | Display device | |
| JP7128334B2 (en) | Display devices, display modules, electronic devices | |
| US10591783B2 (en) | Display device, display module, electronic device, and manufacturing method of display device | |
| JP2022068209A (en) | Display device | |
| CN111052396B (en) | Semiconductor device and display device | |
| KR20180027366A (en) | Electronic device, image display method, program, and display system | |
| CN117116946A (en) | Semiconductor device, display device, and method for manufacturing semiconductor device | |
| KR20180059358A (en) | Display device and operating method thereof | |
| US10163989B2 (en) | Display device and electronic device | |
| JP2017227888A (en) | Display device, method of driving the same, and electronic apparatus | |
| JP6946126B2 (en) | Display system | |
| KR20180035678A (en) | Semiconductor device and electronic device | |
| JP7274645B2 (en) | Display device | |
| JP2018022890A (en) | Semiconductor device and semiconductor device manufacturing method | |
| JP7043189B2 (en) | Display devices, display modules, electronic devices | |
| CN111033757B (en) | Semiconductor device and display device | |
| JP2018031944A (en) | Display system and electronic apparatus | |
| JP2018049042A (en) | Display device | |
| JP2018054901A (en) | Display system and electronic apparatus | |
| JP2018049267A (en) | Display system, electronic apparatus, and display method | |
| JP7077452B2 (en) | Display device | |
| JP2018060198A (en) | Display device and electronic apparatus | |
| JP2018072462A (en) | Display device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20110406 Termination date: 20191111 |