CN101427373B - 用于制造包含每单位面积有高电容的电容器的半导体组件的方法 - Google Patents
用于制造包含每单位面积有高电容的电容器的半导体组件的方法 Download PDFInfo
- Publication number
- CN101427373B CN101427373B CN2007800140490A CN200780014049A CN101427373B CN 101427373 B CN101427373 B CN 101427373B CN 2007800140490 A CN2007800140490 A CN 2007800140490A CN 200780014049 A CN200780014049 A CN 200780014049A CN 101427373 B CN101427373 B CN 101427373B
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- semiconductor
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- insulator
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- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 69
- 239000003990 capacitor Substances 0.000 title claims abstract description 42
- 238000000034 method Methods 0.000 title claims abstract description 35
- 239000012212 insulator Substances 0.000 claims abstract description 37
- 238000000151 deposition Methods 0.000 claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 239000004020 conductor Substances 0.000 claims abstract description 5
- 229910052751 metal Inorganic materials 0.000 claims description 48
- 239000002184 metal Substances 0.000 claims description 48
- 230000008021 deposition Effects 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 15
- 238000005516 engineering process Methods 0.000 claims description 14
- 239000012535 impurity Substances 0.000 claims description 14
- 239000010936 titanium Substances 0.000 claims description 13
- 239000011575 calcium Substances 0.000 claims description 12
- 238000005530 etching Methods 0.000 claims description 12
- 230000015572 biosynthetic process Effects 0.000 claims description 11
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 10
- 150000002500 ions Chemical class 0.000 claims description 10
- 238000002955 isolation Methods 0.000 claims description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 6
- 238000000137 annealing Methods 0.000 claims description 6
- 238000000059 patterning Methods 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 5
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 5
- 229910052788 barium Inorganic materials 0.000 claims description 5
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052791 calcium Inorganic materials 0.000 claims description 5
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 claims description 5
- 229910052726 zirconium Inorganic materials 0.000 claims description 5
- 239000002019 doping agent Substances 0.000 claims description 4
- 238000002347 injection Methods 0.000 claims description 3
- 239000007924 injection Substances 0.000 claims description 3
- 230000001568 sexual effect Effects 0.000 claims description 2
- 230000005611 electricity Effects 0.000 claims 1
- 239000007772 electrode material Substances 0.000 claims 1
- 238000002156 mixing Methods 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 23
- 229910052710 silicon Inorganic materials 0.000 description 23
- 239000010703 silicon Substances 0.000 description 23
- 238000004519 manufacturing process Methods 0.000 description 7
- 150000004767 nitrides Chemical class 0.000 description 7
- 239000000126 substance Substances 0.000 description 7
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 229920005591 polysilicon Polymers 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 238000001020 plasma etching Methods 0.000 description 5
- 125000006850 spacer group Chemical group 0.000 description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 238000000227 grinding Methods 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 3
- 238000004151 rapid thermal annealing Methods 0.000 description 3
- 229910052706 scandium Inorganic materials 0.000 description 3
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000014509 gene expression Effects 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910004129 HfSiO Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- -1 wherein Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims (10)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/409,362 US7439127B2 (en) | 2006-04-20 | 2006-04-20 | Method for fabricating a semiconductor component including a high capacitance per unit area capacitor |
US11/409,362 | 2006-04-20 | ||
PCT/US2007/004374 WO2007126488A2 (en) | 2006-04-20 | 2007-02-20 | Method for fabricating a semiconductor component including a high capacitance per unit area capacitor |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101427373A CN101427373A (zh) | 2009-05-06 |
CN101427373B true CN101427373B (zh) | 2012-05-30 |
Family
ID=38462378
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2007800140490A Expired - Fee Related CN101427373B (zh) | 2006-04-20 | 2007-02-20 | 用于制造包含每单位面积有高电容的电容器的半导体组件的方法 |
Country Status (8)
Country | Link |
---|---|
US (1) | US7439127B2 (zh) |
JP (1) | JP2009534833A (zh) |
KR (1) | KR101377705B1 (zh) |
CN (1) | CN101427373B (zh) |
DE (1) | DE112007000964B4 (zh) |
GB (1) | GB2450457A (zh) |
TW (1) | TWI455283B (zh) |
WO (1) | WO2007126488A2 (zh) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102007052097B4 (de) * | 2007-10-31 | 2010-10-28 | Advanced Micro Devices, Inc., Sunnyvale | Verfahren zur Herstellung eines SOI-Bauelements mit einer Substratdiode |
US9590059B2 (en) * | 2014-12-24 | 2017-03-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Interdigitated capacitor to integrate with flash memory |
US9570539B2 (en) * | 2015-01-30 | 2017-02-14 | Taiwan Semiconductor Manufacturing Co., Ltd. | Integration techniques for MIM or MIP capacitors with flash memory and/or high-κ metal gate CMOS technology |
WO2016187022A1 (en) | 2015-05-15 | 2016-11-24 | Skyworks Solutions, Inc. | Cavity formation in semiconductor devices |
CN105161457B (zh) * | 2015-08-13 | 2017-12-08 | 江苏时代全芯存储科技有限公司 | 半导体基板的制备方法 |
IT201800000947A1 (it) * | 2018-01-15 | 2019-07-15 | St Microelectronics Srl | Piastrina a semiconduttore con condensatore sepolto, e metodo di fabbricazione della piastrina a semiconduttore |
CN114204933A (zh) * | 2020-11-09 | 2022-03-18 | 台湾积体电路制造股份有限公司 | 集成电路及其操作方法 |
CN113078159B (zh) * | 2021-03-18 | 2023-08-29 | 长江先进存储产业创新中心有限责任公司 | 具有去耦电容的集成电路芯片及其制造方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5053917A (en) * | 1989-08-30 | 1991-10-01 | Nec Corporation | Thin film capacitor and manufacturing method thereof |
CN1230788A (zh) * | 1998-03-27 | 1999-10-06 | 国际商业机器公司 | 用于绝缘体上硅集成电路的掩埋图形的导体层 |
CN1627520A (zh) * | 2003-12-08 | 2005-06-15 | 松下电器产业株式会社 | 去耦电容与半导体集成电路 |
US6936514B1 (en) * | 2004-04-05 | 2005-08-30 | Advanced Micro Devices, Inc. | Semiconductor component and method |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0644601B2 (ja) * | 1989-08-30 | 1994-06-08 | 日本電気株式会社 | 薄膜コンデンサおよびその製造方法 |
JPH0888332A (ja) | 1994-09-19 | 1996-04-02 | Toshiba Corp | 半導体記憶装置の製造方法 |
US6323078B1 (en) * | 1999-10-14 | 2001-11-27 | Agere Systems Guardian Corp. | Method of forming metal oxide metal capacitors using multi-step rapid thermal process and a device formed thereby |
US6461914B1 (en) * | 2001-08-29 | 2002-10-08 | Motorola, Inc. | Process for making a MIM capacitor |
JP4309608B2 (ja) * | 2001-09-12 | 2009-08-05 | 株式会社東芝 | 半導体装置及びその製造方法 |
US20050063136A1 (en) * | 2003-09-18 | 2005-03-24 | Philofsky Elliott Malcolm | Decoupling capacitor and method |
US7012027B2 (en) * | 2004-01-27 | 2006-03-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Zirconium oxide and hafnium oxide etching using halogen containing chemicals |
US7102204B2 (en) * | 2004-06-29 | 2006-09-05 | International Business Machines Corporation | Integrated SOI fingered decoupling capacitor |
JP2006073939A (ja) * | 2004-09-06 | 2006-03-16 | Toshiba Corp | 不揮発性半導体記憶装置及び不揮発性半導体記憶装置の製造方法 |
US7422954B2 (en) * | 2006-03-14 | 2008-09-09 | United Microelectronics Corp. | Method for fabricating a capacitor structure |
-
2006
- 2006-04-20 US US11/409,362 patent/US7439127B2/en not_active Expired - Fee Related
-
2007
- 2007-02-20 DE DE112007000964T patent/DE112007000964B4/de not_active Expired - Fee Related
- 2007-02-20 WO PCT/US2007/004374 patent/WO2007126488A2/en active Application Filing
- 2007-02-20 CN CN2007800140490A patent/CN101427373B/zh not_active Expired - Fee Related
- 2007-02-20 JP JP2009506488A patent/JP2009534833A/ja active Pending
- 2007-04-16 TW TW096113289A patent/TWI455283B/zh not_active IP Right Cessation
-
2008
- 2008-10-21 GB GB0819255A patent/GB2450457A/en not_active Withdrawn
- 2008-11-19 KR KR1020087028304A patent/KR101377705B1/ko not_active IP Right Cessation
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5053917A (en) * | 1989-08-30 | 1991-10-01 | Nec Corporation | Thin film capacitor and manufacturing method thereof |
CN1230788A (zh) * | 1998-03-27 | 1999-10-06 | 国际商业机器公司 | 用于绝缘体上硅集成电路的掩埋图形的导体层 |
CN1627520A (zh) * | 2003-12-08 | 2005-06-15 | 松下电器产业株式会社 | 去耦电容与半导体集成电路 |
US6936514B1 (en) * | 2004-04-05 | 2005-08-30 | Advanced Micro Devices, Inc. | Semiconductor component and method |
Non-Patent Citations (1)
Title |
---|
JP平8-88332A 1996.04.02 |
Also Published As
Publication number | Publication date |
---|---|
KR101377705B1 (ko) | 2014-03-25 |
DE112007000964T5 (de) | 2009-04-09 |
KR20080112393A (ko) | 2008-12-24 |
GB2450457A (en) | 2008-12-24 |
US7439127B2 (en) | 2008-10-21 |
TWI455283B (zh) | 2014-10-01 |
JP2009534833A (ja) | 2009-09-24 |
GB0819255D0 (en) | 2008-11-26 |
CN101427373A (zh) | 2009-05-06 |
TW200802800A (en) | 2008-01-01 |
WO2007126488A2 (en) | 2007-11-08 |
DE112007000964B4 (de) | 2011-04-14 |
US20070249166A1 (en) | 2007-10-25 |
WO2007126488A3 (en) | 2008-01-31 |
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