CN101421862B - 作为有机半导体的醌型体系 - Google Patents

作为有机半导体的醌型体系 Download PDF

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Publication number
CN101421862B
CN101421862B CN200780013179.2A CN200780013179A CN101421862B CN 101421862 B CN101421862 B CN 101421862B CN 200780013179 A CN200780013179 A CN 200780013179A CN 101421862 B CN101421862 B CN 101421862B
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China
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substituted
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alkyl
group
formula
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Expired - Fee Related
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CN200780013179.2A
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English (en)
Chinese (zh)
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CN101421862A (zh
Inventor
U·比伦斯
A·斯塔森
B·施米达尔特
W·卡尔布
F·比恩瓦尔德
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Clap Co Ltd
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Ciba SC Holding AG
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    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D493/00—Heterocyclic compounds containing oxygen atoms as the only ring hetero atoms in the condensed system
    • C07D493/02—Heterocyclic compounds containing oxygen atoms as the only ring hetero atoms in the condensed system in which the condensed system contains two hetero rings
    • C07D493/04—Ortho-condensed systems
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D493/00—Heterocyclic compounds containing oxygen atoms as the only ring hetero atoms in the condensed system
    • C07D493/22—Heterocyclic compounds containing oxygen atoms as the only ring hetero atoms in the condensed system in which the condensed system contains four or more hetero rings
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D495/00—Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms
    • C07D495/02—Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms in which the condensed system contains two hetero rings
    • C07D495/04—Ortho-condensed systems
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6574—Polycyclic condensed heteroaromatic hydrocarbons comprising only oxygen in the heteroaromatic polycondensed ring system, e.g. cumarine dyes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6576—Polycyclic condensed heteroaromatic hydrocarbons comprising only sulfur in the heteroaromatic polycondensed ring system, e.g. benzothiophene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/474—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising a multilayered structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/474—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising a multilayered structure
    • H10K10/476—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising a multilayered structure comprising at least one organic layer and at least one inorganic layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H10K85/623—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene containing five rings, e.g. pentacene
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Heterocyclic Carbon Compounds Containing A Hetero Ring Having Oxygen Or Sulfur (AREA)
CN200780013179.2A 2006-04-13 2007-04-04 作为有机半导体的醌型体系 Expired - Fee Related CN101421862B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP06112585.2 2006-04-13
EP06112585 2006-04-13
PCT/EP2007/053314 WO2007118799A1 (en) 2006-04-13 2007-04-04 Quinoid systems as organic semiconductors

Publications (2)

Publication Number Publication Date
CN101421862A CN101421862A (zh) 2009-04-29
CN101421862B true CN101421862B (zh) 2013-01-02

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN200780013179.2A Expired - Fee Related CN101421862B (zh) 2006-04-13 2007-04-04 作为有机半导体的醌型体系

Country Status (6)

Country Link
US (1) US8471019B2 (enExample)
EP (1) EP2005497B1 (enExample)
JP (1) JP5275218B2 (enExample)
CN (1) CN101421862B (enExample)
TW (1) TWI451609B (enExample)
WO (1) WO2007118799A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7781076B2 (en) 2007-06-26 2010-08-24 Eastman Kodak Company Heteropyrene-based semiconductor materials for electronic devices and methods of making the same
KR101810352B1 (ko) 2008-07-18 2017-12-19 유디씨 아일랜드 리미티드 전자 용품을 위한 아자피렌
DE102008061843B4 (de) * 2008-12-15 2018-01-18 Novaled Gmbh Heterocyclische Verbindungen und deren Verwendung in elektronischen und optoelektronischen Bauelementen
US8283659B2 (en) * 2010-12-23 2012-10-09 Xerox Corporation Tetrahydrotetraazapentacenes in thin-film transistors
US20150155494A1 (en) * 2012-07-13 2015-06-04 Merck Patent Gmbh Organic electronic device comprising an organic semiconductors formulation
JP6184234B2 (ja) * 2013-08-02 2017-08-23 富士フイルム株式会社 有機薄膜トランジスタ、有機半導体薄膜および有機半導体材料
JP6325128B2 (ja) * 2014-11-07 2018-05-16 富士フイルム株式会社 有機半導体素子及び化合物
KR20230001181A (ko) 2021-06-28 2023-01-04 삼성전자주식회사 적외선 포토다이오드, 센서 및 전자 장치

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5028643A (en) 1989-06-27 1991-07-02 Ciba-Geigy Corporation Tetrabenzodiazadiketoperylene pigment
JP2000231987A (ja) 1999-02-10 2000-08-22 Fujitsu Ltd 有機エレクトロルミネッセンス素子及びそれを使用した表示装置
JP4171170B2 (ja) * 2000-10-17 2008-10-22 富士フイルム株式会社 有機エレクトロルミネッセンス素子及びそれを使用した表示装置
DE10109333C1 (de) 2001-02-27 2002-11-21 Siemens Ag Hochkondensierte Borkomplexverbindungen, Herstellungsverfahren und Verwendung dazu
JP2005250435A (ja) * 2004-02-04 2005-09-15 Mitsubishi Chemicals Corp 近赤外線吸収フィルター
WO2006120143A1 (en) * 2005-05-13 2006-11-16 Ciba Specialty Chemicals Holding Inc. Azaperylenes as organic semiconductors

Also Published As

Publication number Publication date
EP2005497B1 (en) 2014-10-08
US20090261321A1 (en) 2009-10-22
WO2007118799A1 (en) 2007-10-25
TWI451609B (zh) 2014-09-01
TW200810165A (en) 2008-02-16
CN101421862A (zh) 2009-04-29
JP2009533852A (ja) 2009-09-17
JP5275218B2 (ja) 2013-08-28
US8471019B2 (en) 2013-06-25
EP2005497A1 (en) 2008-12-24

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Effective date of registration: 20210513

Address after: Ludwigshafen, Germany

Patentee after: BASF SE

Address before: Basel, Switzerland

Patentee before: BASF special chemicals Holdings Ltd.

Effective date of registration: 20210513

Address after: Basel, Switzerland

Patentee after: BASF special chemicals Holdings Ltd.

Address before: Basel, Switzerland

Patentee before: CIBA HOLDING Inc.

TR01 Transfer of patent right
TR01 Transfer of patent right

Effective date of registration: 20210616

Address after: Seoul, South Kerean

Patentee after: Clap Ltd.

Address before: Ludwigshafen, Germany

Patentee before: BASF SE

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CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20130102

CF01 Termination of patent right due to non-payment of annual fee