CN101409126A - Inductance coupling coil and inductance coupling plasma apparatus - Google Patents
Inductance coupling coil and inductance coupling plasma apparatus Download PDFInfo
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- CN101409126A CN101409126A CNA200810021271XA CN200810021271A CN101409126A CN 101409126 A CN101409126 A CN 101409126A CN A200810021271X A CNA200810021271X A CN A200810021271XA CN 200810021271 A CN200810021271 A CN 200810021271A CN 101409126 A CN101409126 A CN 101409126A
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Abstract
The invention relates to the field of semiconductor manufacturing devices and particularly relates to an inductive coupling plasma device (ICP) and an inductive coupling coil used in the ICP device. The ICP device comprises a reaction chamber (10), a workbench (11), the inductive coupling coil, an inductance radio frequency matcher (12) and an inductance radio frequency power supply (13); the ICP device is characterized in that the inductive coupling coil is arranged in the reaction chamber (10) and positioned above the workbench (11); the inductive coupling coil is composed of the same two planar gridiron coils (1) which are connected in parallel and symmetrically arranged; wherein, each planar gridiron coil (1) uses a copper tube (2) to be folded into a gridiron structure according to a U-shaped wave path on a plane, a ceramic insulating inner sleeve (5) is arranged in the copper tube (2), the inner cavity of the ceramic insulating inner sleeve (5) is taken as a cooling water channel, and a ceramic insulating outer sleeve (6) is arranged outside the copper tube (2). The ICP device and the inductive coupling coil have good distribution uniformity of magnetic field, high efficiency and smaller damage to the surface of a substrate, thereby being applicable to large-area thin film deposition, etching, surface treatment and other semiconductor processing technologies.
Description
Technical field
The present invention relates to the semiconductor manufacturing facility field, particularly a kind of inductance coupled plasma device (ICP) and the radio frequency inductive coupling coil that is used for this device.Described inductance coupled plasma device belongs to the high density perception coupled plasma device that the very high frequency(VHF) power source drives, and can be applicable to thin film deposition, etching and surface treatment technologies such as (as cleanings) in the semiconductor manufacturing.
Background technology
In semiconductor fabrication process, plasma reaction device is a kind of important process equipment, is widely used in technologies such as thin film deposition, etching and surface treatment.Plasma reaction device generally is made up of reative cell, workbench, induction coupling element, driving power, air supply system and extract system, wherein, workbench is positioned at reative cell and is used to install processed substrate, induction coupling element and driving power are responsible for providing the electromagnetic field of activated plasma in reative cell, air supply system is responsible for providing reacting gas to reative cell, and extract system is responsible for outside exhaust and control reative cell air pressure.Plasma reaction device is divided into two kinds in capacitively coupled plasma device and inductive coupled plasma device because of induction coupling element difference.The capacitively coupled plasma device adopts plate capacitive coupling element at present, and driving frequency is 13.56MHz, provides to reative cell to excite electric field to make reacting gas produce ionization formation plasma.This plasma reaction device is because of the restriction of capacitive coupling element, and the plasma density of generation is lower, about 10
9/ cm
3Magnitude, though there are some advantages in it aspect amplification of plasma area, the capacitively coupled plasma current potential higher (＞20V), substrate surface is subjected to the bombardment of active ion easily, therefore, materials processing and surface modification difficult quality are guaranteed.The coupling element of inductive coupled plasma device (being inductance coupled plasma device ICP) adopts inductance-coupled coil, provides in radio-frequency power supply driving downhill reaction chamber to excite magnetic field to make reacting gas produce ionization formation plasma.Inductance-coupled coil is the technological core of inductive coupled plasma device, and its design is directly connected to the performance and the effect of plasma reaction device.Early stage inductance-coupled coil is the snail structure, this inductance-coupled coil is stronger in the magnetic field that reative cell central portion branch excites, and the magnetic field that the edge part branch excites a little less than, so the plasma density of reative cell middle body is higher, the marginal portion plasma density is lower.Particularly the processing dimension of substrate is increased to 400mm from 100mm, after the also corresponding increase of the volume of reative cell, there is very big azimuthal asymmetry in the plasma that the planar spiral inductor coupling coil excites, can only rely on diffusion to remedy the low density zone of environmental plasma.Such result causes the speed and the thickness of substrate membrane deposition or etching inhomogeneous, influences semi-conductive crudy and stability.
In order to obtain plasma density distribution relatively uniformly in reative cell, Chinese patent CN1812010A, CN1825505A, CN1925074A, CN101131893A, CN101136279A etc. all disclose the technical scheme about inductance-coupled coil and inductance coupled plasma device thereof.Taking a broad view of these schemes inventor is core with the plasma density distribution uniformity, has designed the inductance-coupled coil of a series of difformities and structure from different perspectives, and its characteristics cut both ways.
Summary of the invention
The purpose of this invention is to provide a kind of Distribution of Magnetic Field good uniformity, efficient height, littler, and be suitable for the inductance-coupled coil and the inductance coupled plasma device of large tracts of land processing the substrate surface damage.
For achieving the above object, the technical scheme that inductance-coupled coil of the present invention adopts is: this inductance-coupled coil is made up of the planar gate shape coil of two groups of same structures, shape and size, wherein, every group of planar gate shape coil folds into bar structure by " U " shape wave path in the plane by a copper pipe, the bending part of bar structure is semicircle or arc transition, and the straight section of bar structure is parallel to each other; Be provided with the ceramic insulation inner sleeve in the copper pipe, the inner chamber of ceramic insulation inner sleeve is as cooling-water duct, and copper pipe is provided with the ceramic insulation outer tube outward;
Two groups of planar gate shape coils are that benchmark is symmetrically arranged in same plane with the axis that is parallel to described straight section, wherein, one end of one group of planar gate shape coil with after an end of another group planar gate shape coil symmetry is in parallel as first end of inductance-coupled coil, and the other end of one group of planar gate shape coil with another organize the other end of planar gate shape coil symmetry in parallel after as second end of inductance-coupled coil.
Related content in the technique scheme is explained as follows:
1, in the such scheme, described " size " is meant planar gate shape coil design and manufacturing dimension, such as inner and outer diameter, the thickness of copper pipe, the length of straight section, the radius of bending part semicircle or circular arc, spacing between the straight section or the like.
2, in the such scheme, " in the plane " in described " by a copper pipe in the plane ... " is three-dimensional relatively, mean copper pipe and on a plane, fold into bar structure, and be planarized structure.
3, in the such scheme, what described " bending part of bar structure " referred to is exactly " U " shape bend.And described " straight section of bar structure " refers to U " the straight portion of shape both sides.
4, in the such scheme,, can on the copper pipe outer wall of every group of planar gate shape coil, be provided with silver coating in order to improve the electrical property of copper pipe outer surface.
5, in the such scheme, the copper pipe external diameter of described planar gate shape coil is 0.8 centimetre～1.2 centimetres, and the copper pipe wall thickness is 0.08～0.12 centimetre, and described bar structure grid centre-to-centre spacing is 5 centimetres～12 centimetres, and grid straight section length is 80 centimetres～100 centimetres.
6, in the such scheme, the wall thickness of described ceramic insulation inner sleeve and ceramic insulation outer tube is 0.4 millimeter～0.6 millimeter.
For achieving the above object, the technical scheme that inductance coupled plasma device of the present invention adopts is: this device comprises reative cell, workbench, inductance-coupled coil, inductive radio frequency adaptation and inductive radio frequency power supply, described inductance-coupled coil is located in the reative cell, and is positioned at the workbench top; Described inductance-coupled coil is made up of the planar gate shape coil of two groups of same structures, shape and size, wherein, every group of planar gate shape coil folds into bar structure by " U " shape wave path in the plane by a copper pipe, the bending part of bar structure is semicircle or arc transition, and the straight section of bar structure is parallel to each other; Be provided with the ceramic insulation inner sleeve in the copper pipe, the inner chamber of ceramic insulation inner sleeve is as cooling-water duct, and copper pipe is provided with the ceramic insulation outer tube outward;
Two groups of planar gate shape coils are that benchmark is symmetrically arranged in same plane with the axis that is parallel to described straight section, wherein, one end of one group of planar gate shape coil with after an end of another group planar gate shape coil symmetry is in parallel as the radio-frequency (RF) output end of the first termination inductive radio frequency adaptation of inductance-coupled coil, and the other end of one group of planar gate shape coil with after the other end of another group planar gate shape coil symmetry is in parallel as the earth terminal of the second termination inductive radio frequency adaptation of inductance-coupled coil, the inductive radio frequency adaptation is connected with the inductive radio frequency power supply.
Related content in the technique scheme is explained as follows:
1, in the such scheme, described " first end of inductance-coupled coil " is power end [axial coil feed (powered)].Described " second end of inductance-coupled coil " is earth terminal [axial coil feed (terminated)].
2, in the such scheme, plasma also is set on the described workbench receives electrode of substrate, the counterpart substrate electrode is provided with substrate radio frequency adaptation and substrate bias power supply, and electrode of substrate is connected with the radio-frequency (RF) output end of substrate radio frequency adaptation, and the substrate radio frequency adaptation is connected with the substrate bias power supply.
3, in the such scheme,, reacting gas also is equipped with air supply system for being provided to reative cell.Chamber waste gas will be discharged and control reative cell air pressure also is equipped with extract system in order to react.These all are existing known technologies.
4, above explanatory content to the inductance-coupled coil technical scheme is equally applicable to inductance coupled plasma device is laid down a definition.Here no longer be repeated in this description.
The principle of the invention and effect are: replace conventional spiral coil with the grid shape coil in parallel that can produce the Uniform Electromagnetic Field distribution, use the very high frequency(VHF) driving frequency power source of 27.12MHz to load on grid shape coil power end in parallel, and on the electrode of substrate of workbench, being aided with the bias supply of 13.56MHz, formed plasma density is greater than 7 * 10
11/ cm
3, be higher than conventional inductively coupled plasma; Plasma uniformity is good, and the fluctuation of plasma density is less than 5% in the scope of 400mm * 400mm; The plasma potential that produces is less than 10V, and energetic ion is little to the bombardment damage of substrate; The continual and steady discharge time of inductively coupled plasma was greater than 720 hours.Therefore, prepare the growth rate of amorphous silicon, Nano thin film greater than 20nm/min with inductance coupled plasma device of the present invention, the growth rate of preparation polysilicon, carborundum films is greater than 10nm/min, and interior (8in wafer) the thickness evenness deviation of the sheet of film is less than 5%, surface modification is abundant, the power coupling efficiency height, energy consumption is low.
Description of drawings
Accompanying drawing 1 is existing helical coil inductance coupled plasma device structural representation.
Accompanying drawing 2 is inductance coupled plasma device structural representation of the present invention.
Accompanying drawing 3 is inductance-coupled coil structural representation of the present invention.
Accompanying drawing 4 is inductance-coupled coil cross-sectional view of the present invention.
Accompanying drawing 5 is the near gain directional diagram of embodiment of the invention inductance-coupled coil radiation.Directional diagram shows that radiation is along the polarization perpendicular to the inductance-coupled coil in-plane, and the 150 ° of field angles of having an appointment, and can form bigger homogeneity range in base plan.
Accompanying drawing 6 be embodiment of the invention inductance-coupled coil radiation field along azimuthal distribution, image shows that radiation field is very even along azimuthal distribution in base plan.
In the above accompanying drawing: 1, planar gate shape coil; 2, copper pipe; 3, bending part; 4, straight section; 5, ceramic insulation inner sleeve; 6, ceramic insulation outer tube; 7, first end; 8, second end; 9, silver coating; 10, reative cell; 11, workbench; 12, inductive radio frequency adaptation; 13, inductive radio frequency power supply; 14, electrode of substrate; 15, substrate radio frequency adaptation; 16, substrate bias power supply; 17, helical coil; 18, radome; 19, quartz plate; 20, vacuum pump; 21, air supply opening; 22, bleeding point.
Embodiment
Below in conjunction with drawings and Examples the present invention is further described:
Embodiment: a kind of inductance coupled plasma device (comprising inductance-coupled coil)
As shown in Figure 2, this device mainly is made up of several parts such as reative cell 10, workbench 11, inductive radio frequency generator, substrate radio freqnency generator, air supply system and extract systems.Wherein, the inductive radio frequency generator is made up of inductance-coupled coil, inductive radio frequency adaptation 12 and inductive radio frequency power supply 13, and the substrate radio freqnency generator is made up of electrode of substrate 14, substrate radio frequency adaptation 15 and substrate bias power supply 16.
As shown in Figure 3 and Figure 4, inductance-coupled coil is made up of the planar gate shape coil 1 of two groups of same structures, shape and size, wherein, every group of planar gate shape coil 1 folds into bar structure by " U " shape wave path in the plane by a copper pipe 2, the bending part 3 of bar structure is semicircle or arc transition, and the straight section 4 of bar structure is parallel to each other; Be provided with ceramic insulation inner sleeve 5 in the copper pipe 2, the inner chamber of ceramic insulation inner sleeve 5 is as cooling-water duct, and copper pipe 2 outer walls are provided with silver coating 9, the copper pipe 2 outer ceramic insulation outer tubes 6 that are provided with.
Described planar gate shape coil 1 parameter of structure design: the copper pipe external diameter is 0.8 centimetre～1.2 centimetres, and the copper pipe wall thickness is 0.08～0.12 centimetre, and described bar structure grid centre-to-centre spacing is 5 centimetres～12 centimetres, and grid straight section length is 80 centimetres～100 centimetres.The wall thickness of described ceramic insulation inner sleeve (5) and ceramic insulation outer tube (6) is 0.4 millimeter～0.6 millimeter.
Two groups of planar gate shape coils 1 are that benchmark is symmetrically arranged in same plane with the axis that is parallel to described straight section 4, wherein, one end of one group of planar gate shape coil 1 and the radio-frequency (RF) output end that connects inductive radio frequency adaptation 12 after an end of another group planar gate shape coil 1 symmetry is in parallel as first end 7 of inductance-coupled coil, and the other end of one group of planar gate shape coil 1 and the earth terminal that connects inductive radio frequency adaptation 12 after the other end of another group planar gate shape coil 1 symmetry is in parallel as second end 8 of inductance-coupled coil, inductive radio frequency adaptation 12 is connected with inductive radio frequency power supply 13.
Air supply system is connected with reative cell 10 by air supply opening 21, and being responsible for provides reacting gas to reative cell 10.Extract system is connected with reative cell 10 with bleeding point 22 by vacuum pump 20, the air pressure size (vacuum degree) of being responsible in reative cell 10 work outside exhaust and controlling reative cell 10.In the work, inductive radio frequency power supply 13 is the radio-frequency power supply of 27.12MHz by inductive radio frequency adaptation 12 to the inductance-coupled coil loading frequency, thereby produces the high-intensity magnetic field of activated plasma in reative cell 10.And substrate bias power supply 16 applies the rf bias power supply that frequency is 13.56MHz by substrate radio frequency adaptation 15 to electrode of substrate 14, thereby provides bias field to substrate.Because inductance-coupled coil is a hollow-core construction, the heat of generation can cool off by water cooling passageway.
The foregoing description only is explanation technical conceive of the present invention and characteristics, and its purpose is to allow the personage who is familiar with this technology can understand content of the present invention and enforcement according to this, can not limit protection scope of the present invention with this.All equivalences that spirit is done according to the present invention change or modify, and all should be encompassed within protection scope of the present invention.
Claims (9)
1, a kind of inductance-coupled coil that is applied to inductance coupled plasma device, it is characterized in that: the planar gate shape coil (1) by two groups of same structures, shape and size is formed, wherein, every group of planar gate shape coil (1) folds into bar structure by " U " shape wave path in the plane by a copper pipe (2), the bending part of bar structure (3) is semicircle or arc transition, and the straight section of bar structure (4) is parallel to each other; Be provided with ceramic insulation inner sleeve (5) in the copper pipe (2), the inner chamber of ceramic insulation inner sleeve (5) is provided with ceramic insulation outer tube (6) as cooling-water duct outside the copper pipe (2);
Two groups of planar gate shape coils (1) are that benchmark is symmetrically arranged in same plane with the axis that is parallel to described straight section (4), wherein, one end of one group of planar gate shape coil (1) with after an end of another group planar gate shape coil (1) symmetry is in parallel as first end (7) of inductance-coupled coil, and the symmetrical other end of the other end of one group of planar gate shape coil (1) and another group planar gate shape coil (1) in parallel after as second end (8) of inductance-coupled coil.
2, inductance-coupled coil according to claim 1 is characterized in that: copper pipe (2) outer wall of described every group of planar gate shape coil (1) is provided with silver coating (9).
3, inductance-coupled coil according to claim 1, it is characterized in that: the copper pipe external diameter of described planar gate shape coil (1) is 0.8 centimetre～1.2 centimetres, the copper pipe wall thickness is 0.08～0.12 centimetre, described bar structure grid centre-to-centre spacing is 5 centimetres～12 centimetres, and grid straight section length is 80 centimetres～100 centimetres.
4, inductance-coupled coil according to claim 1 is characterized in that: the wall thickness of described ceramic insulation inner sleeve (5) and ceramic insulation outer tube (6) is 0.4 millimeter～0.6 millimeter.
5, a kind of inductance coupled plasma device, comprise reative cell (10), workbench (11), inductance-coupled coil, inductive radio frequency adaptation (12) and inductive radio frequency power supply (13), it is characterized in that: described inductance-coupled coil is located in the reative cell (10), and is positioned at workbench (11) top; Described inductance-coupled coil is made up of the planar gate shape coil (1) of two groups of same structures, shape and size, wherein, every group of planar gate shape coil (1) folds into bar structure by " U " shape wave path in the plane by a copper pipe (2), the bending part of bar structure (3) is semicircle or arc transition, and the straight section of bar structure (4) is parallel to each other; Be provided with ceramic insulation inner sleeve (5) in the copper pipe (2), the inner chamber of ceramic insulation inner sleeve (5) is provided with ceramic insulation outer tube (6) as cooling-water duct outside the copper pipe (2);
Two groups of planar gate shape coils (1) are that benchmark is symmetrically arranged in same plane with the axis that is parallel to described straight section (4), wherein, one end of one group of planar gate shape coil (1) with connect the radio-frequency (RF) output end of inductive radio frequency adaptation (12) as first end (7) of inductance-coupled coil after an end of another group planar gate shape coil (1) symmetry is in parallel, and the other end of one group of planar gate shape coil (1) with connect the earth terminal of inductive radio frequency adaptation (12) as second end (8) of inductance-coupled coil after the other end of another group planar gate shape coil (1) symmetry is in parallel, inductive radio frequency adaptation (12) is connected with inductive radio frequency power supply (13).
6, inductance coupled plasma device according to claim 5, it is characterized in that: described workbench (11) is provided with plasma and receives electrode of substrate (14), counterpart substrate electrode (14) is provided with substrate radio frequency adaptation (15) and substrate bias power supply (16), electrode of substrate (14) is connected with the radio-frequency (RF) output end of substrate radio frequency adaptation (15), and substrate radio frequency adaptation (15) is connected (16) with the substrate bias power supply.
7, inductance-coupled coil according to claim 5 is characterized in that: copper pipe (2) outer wall of described every group of planar gate shape coil (1) is provided with silver coating (9).
8, inductance-coupled coil according to claim 5, it is characterized in that: the copper pipe external diameter of described planar gate shape coil (1) is 0.8 centimetre～1.2 centimetres, the copper pipe wall thickness is 0.08～0.12 centimetre, described bar structure grid centre-to-centre spacing is 5 centimetres～12 centimetres, and grid straight section length is 80 centimetres～100 centimetres.
9, inductance-coupled coil according to claim 5 is characterized in that: the wall thickness of described ceramic insulation inner sleeve (5) and ceramic insulation outer tube (6) is 0.4 millimeter～0.6 millimeter.
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| CN200810021271XA CN101409126B (en) | 2008-08-07 | 2008-08-07 | Inductance coupling coil and inductance coupling plasma apparatus |
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| CN200810021271XA CN101409126B (en) | 2008-08-07 | 2008-08-07 | Inductance coupling coil and inductance coupling plasma apparatus |
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Cited By (7)
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| CN102503177A (en) * | 2011-10-21 | 2012-06-20 | 苏州大学 | Plasma processing device used for super-smooth surface |
| CN103165382A (en) * | 2011-12-15 | 2013-06-19 | 中国科学院微电子研究所 | Inductive coupling plasma coil and plasma injection device |
| CN103165383A (en) * | 2011-12-15 | 2013-06-19 | 中国科学院微电子研究所 | Inductive coupling plasma coil and plasma injection device |
| CN103702504A (en) * | 2014-01-15 | 2014-04-02 | 北京吉兆源科技有限公司 | Planar plasma generator |
| CN106783539A (en) * | 2016-12-07 | 2017-05-31 | 武汉新芯集成电路制造有限公司 | One kind reduces wafer ion dam age method and ion generator |
| CN109585139A (en) * | 2018-12-10 | 2019-04-05 | 中国科学院微电子研究所 | A kind of inductor |
| CN114833045A (en) * | 2021-02-01 | 2022-08-02 | 江苏菲沃泰纳米科技股份有限公司 | PECVD (plasma enhanced chemical vapor deposition) film coating system and film coating method |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5200595A (en) * | 1991-04-12 | 1993-04-06 | Universite De Sherbrooke | High performance induction plasma torch with a water-cooled ceramic confinement tube |
| KR960006958B1 (en) * | 1993-02-06 | 1996-05-25 | 현대전자산업주식회사 | Low temperature electrode structure of ecr etching apparatus |
| US5643639A (en) * | 1994-12-22 | 1997-07-01 | Research Triangle Institute | Plasma treatment method for treatment of a large-area work surface apparatus and methods |
| CN100527294C (en) * | 2005-02-25 | 2009-08-12 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Inductance coupled coil and inductance coupled plasma device |
| CN201311804Y (en) * | 2008-08-07 | 2009-09-16 | 苏州汉申微电子有限公司 | Inductance-coupling coil and inductance-coupling plasm device |
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2008
- 2008-08-07 CN CN200810021271XA patent/CN101409126B/en not_active Expired - Fee Related
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| CN102503177A (en) * | 2011-10-21 | 2012-06-20 | 苏州大学 | Plasma processing device used for super-smooth surface |
| CN102503177B (en) * | 2011-10-21 | 2014-04-30 | 苏州大学 | Plasma processing device used for super-smooth surface |
| CN103165382A (en) * | 2011-12-15 | 2013-06-19 | 中国科学院微电子研究所 | Inductive coupling plasma coil and plasma injection device |
| CN103165383A (en) * | 2011-12-15 | 2013-06-19 | 中国科学院微电子研究所 | Inductive coupling plasma coil and plasma injection device |
| CN103165383B (en) * | 2011-12-15 | 2016-05-11 | 中国科学院微电子研究所 | Inductively coupled plasma coil and plasma injection device |
| CN103165382B (en) * | 2011-12-15 | 2016-06-29 | 中国科学院微电子研究所 | inductively coupled plasma injection device |
| CN103702504A (en) * | 2014-01-15 | 2014-04-02 | 北京吉兆源科技有限公司 | Planar plasma generator |
| CN103702504B (en) * | 2014-01-15 | 2016-08-24 | 北京吉兆源科技有限公司 | A kind of planar plasma generator |
| CN106783539A (en) * | 2016-12-07 | 2017-05-31 | 武汉新芯集成电路制造有限公司 | One kind reduces wafer ion dam age method and ion generator |
| CN109585139A (en) * | 2018-12-10 | 2019-04-05 | 中国科学院微电子研究所 | A kind of inductor |
| CN109585139B (en) * | 2018-12-10 | 2021-01-12 | 中国科学院微电子研究所 | Inductor |
| CN114833045A (en) * | 2021-02-01 | 2022-08-02 | 江苏菲沃泰纳米科技股份有限公司 | PECVD (plasma enhanced chemical vapor deposition) film coating system and film coating method |
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