CN101408738A - Split vertical type hot plate system in photolithography guide rail equipment - Google Patents
Split vertical type hot plate system in photolithography guide rail equipment Download PDFInfo
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- CN101408738A CN101408738A CNA2007100941344A CN200710094134A CN101408738A CN 101408738 A CN101408738 A CN 101408738A CN A2007100941344 A CNA2007100941344 A CN A2007100941344A CN 200710094134 A CN200710094134 A CN 200710094134A CN 101408738 A CN101408738 A CN 101408738A
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- hot plate
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- discrete hot
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Abstract
The invention discloses a discrete hot plate system in photoetching guideway equipment. Being different from the existing ordinary single hot plate, the discrete hot plate system is formed by combining a plurality of discrete hot plates which can control temperature individually. As the performance of the photoetching technique has direct relation with the temperature of hot plates, the partial temperature control precision is better and the whole distribution can be controlled in a way that the discrete hot plates heat different areas of a silicon chip. After the discrete hot plate system of the invention is used, uniformity in the silicon chip surface of the gluing and developing techniques in the photoetching technique can be greatly improved, and the larger the silicon chip is, the better the effect is. At the same time, temperature control can be realized in different areas by the discrete hot plate system; the temperature of the hot plates is increased or decreased by heating or cooling, so as to affect the characteristic of the photoetching technique; the phenomenon that the window of the photoetching technique is narrowed as the silicon chip brought in former processes (such as film growth, chemico-mechanical polishing and the like) is nonuniform, so as to increasing the window of the photoetching technique.
Description
Technical field
The present invention relates to the photolithography guide rail equipment in a kind of semiconductor manufacturing, relate in particular to discrete hot plate system in a kind of photolithography guide rail equipment.
Background technology
In semiconductor was made, existing photolithography guide rail equipment often was equipped with the various hot plates that silicon chip is heated or cool off, is applied to the soft baking of silicon chip gluing respectively, and the back baking of development and drying by the fire firmly is to the cooling of silicon chip or the like processing step.And the photoresistance thickness of the temperature of silicon chip and spin coating, critical size after the development, the photoresistance pattern, lithographic process window or the like has critical influence to photoetching process, therefore the homogeneity and the control accuracy that how to improve hot plate are most important to photoetching process, concerning Facilities Engineer and equipment vendors, this also is one of deciding factor of weighing the photolithography guide rail equipment quality simultaneously.
Existing hot plate uses integrated design usually, by heating stylus (pin) hot plate is carried out the contact heating then, cooperates by air cooling system simultaneously temperature is controlled.The temperature control capability of this hot plate usually+/-0.5 ℃～2 ℃ between, but owing to be contact heating, the silicon chip inner evenness is relatively poor.And for increase day by day from 4 cun, 6 cun, the increasing of die size such as 8 cun to 12 cun, in the future even need 18 cun or bigger die size, this moment to adopt single hot plate to be difficult to guarantee the requirement of silicon chip inner evenness.
Simultaneously, because the influence of engineering is (as film growth before the silicon wafer exposure, chemically mechanical polishing etc.), silicon chip is not definitely smooth, but there is certain thickness to distribute, often pass through to increase lithographic process window at this moment in existing photoetching process, means such as detection of silicon wafer horizontal degree and automatic feedback are eliminated the influence of substrate layer, have restricted the development of small size photoetching process.And existing hot plate temperature distribution control ability is poor, and the silicon chip heating condition can only singlely be set, and therefore can't reduce the influence of substrate layer by the adjustment of hot plate.
Summary of the invention
The technical problem to be solved in the present invention provides discrete hot plate system in a kind of photolithography guide rail equipment, and this hot plate system can form the temperature space distribution control to the silicon chip heating, improves the temperature controlled inner evenness of large-sized silicon wafers simultaneously.
For solving the problems of the technologies described above, the invention provides discrete hot plate system in a kind of photolithography guide rail equipment, this discrete hot plate system is made up of the discrete hot plate that several each self energys are heated or cooled.
Described several discrete hot plates adopt concentric circles or concentric polygon, perhaps adopt nonconcentric(al) polygon.
Described several discrete hot plates adopt concentric circles or concentric polygon, refer to the center unanimity of each discrete hot plate, and its shape is circular, or polygon.
Described several discrete hot plates adopt nonconcentric(al) polygon, refer to that the center of each discrete hot plate is inconsistent, can N/D ground amalgamation and the covering area heated of wanting.
All discrete hot plates all can be by independently heating and cooling, to be controlled temperature separately.
This discrete hot plate system can be realized the Temperature Distribution of silicon chip heating by each discrete hot plate is set different temperature respectively.
The cold drawing of the preceding baking when described discrete hot plate system can be used as gluing, the hot plate of soft baking and cooling silicon chip, or be used as the hot plate of the back baking when developing, hard baking and the cold drawing of cooling silicon chip.
Compare with prior art, the present invention has following beneficial effect: after having used discrete hot plate system of the present invention, can improve the silicon chip internal homogeneity of gluing in the photoetching process, developing process greatly, and especially obvious more for large-sized more silicon chip effect.Simultaneously can the subregion temperature control by the discrete hot plate system, raise or reduce hot plate temperature by heating cooling to influence the characteristic of photoetching process, can reduce preceding engineering (as film growth by in photoetching process, introducing Temperature Distribution, chemically mechanical polishings etc.) the inhomogeneous lithographic process window that causes of the silicon chip of Yin Ruing dwindles, thereby has increased lithographic process window.
Description of drawings
Fig. 1 is the synoptic diagram of discrete hot plate system in the photolithography guide rail equipment of the present invention, and Fig. 1 (a) is the synoptic diagram that adopts the discrete hot plate system of concentric design, and Fig. 1 (b) is the synoptic diagram that adopts the discrete hot plate system of non-concentric polygon design;
Fig. 2 is the influence synoptic diagram of hot plate temperature to photoetching process, and Fig. 2 (a) is the influence synoptic diagram of hot plate temperature to the photoresistance thickness, and Fig. 2 (b) is the influence synoptic diagram of hot plate temperature to critical size.
Embodiment
The present invention is further detailed explanation below in conjunction with drawings and Examples.
The invention provides discrete hot plate system in a kind of photolithography guide rail equipment, will heat or the hot plate that cools off is designed to be made up of some discrete little hot plates that can heat or cool off separately silicon chip.
As shown in Figure 1, the composition mode of discrete hot plate system of the present invention can have two kinds.A kind of is to adopt concentric circles or polygon design with one heart, and another kind is to adopt non-concentric polygon design.
Shown in Fig. 1 (a), when adopting concentric design, the center of all discrete hot plates (comprising discrete hot plate a, discrete hot plate b and discrete hot plate c) is consistent.Certainly its shape can be circular (concentric circles), also can be polygons such as triangle, rectangle (polygons with one heart).
Shown in Fig. 1 (b), when adopting non-concentric polygon to design, the center of all discrete hot plates (comprising discrete hot plate a, discrete hot plate b and discrete hot plate c) is inconsistent, each polygonal discrete hot plate can the amalgamation of N/D ground (limit of the discrete hot plate of polygon and limit join amalgamation) and cover the silicon chip heating region that will heat, its shape can be a regular hexagon, also can be polygons such as triangle, rectangle.
The cold drawing of the preceding baking when discrete hot plate system of the present invention can be used as gluing, the hot plate of soft baking and cooling silicon chip also can be used as the hot plate of the back baking when developing, hard baking and the cold drawing of cooling silicon chip.All discrete hot plates all can independently heat and cooling, with independent control temperature.When the actual light carving technology is set up, set different temperature separately by adjusting discrete hot plate, can accomplish the temperature space distribution control of hot plate heating, improve gluing, the homogeneity of developing, simultaneously, stronger than the temperature control capability of big hot plate because that single discrete hot plate area can be done is very little.
The present invention is different with existing common single hot plate, is combined to form with the many discrete hot plates that can control temperature separately.Because the performance of photoetching process and hot plate temperature are contacted directly, the critical size after the photoresistance thickness of the temperature of silicon chip and spin coating, the development, photoresistance pattern, lithographic process window or the like have critical influence to photoetching process.Shown in Fig. 2 (a), in different silicon chip positions, along with soft rising of warming plate temperature, the photoresistance thickness is also corresponding to be affected.Shown in Fig. 2 (b), along with after warm plate temperature rising, the critical size after the development also increases thereupon.The present invention heats respectively the silicon chip zones of different by the discrete hot plate, and the local temperature control precision is better and overall distribution is controlled.
Claims (7)
1, discrete hot plate system in a kind of photolithography guide rail equipment is characterized in that, this discrete hot plate system is made up of the discrete hot plate that several each self energys are heated or cooled.
2, discrete hot plate system in the photolithography guide rail equipment according to claim 1 is characterized in that, described several discrete hot plates adopt concentric circles or concentric polygon, perhaps adopt nonconcentric(al) polygon.
3, discrete hot plate system in the photolithography guide rail equipment according to claim 2 is characterized in that, described several discrete hot plates adopt concentric circles or concentric polygon, refers to the center unanimity of each discrete hot plate, and its shape is circular, or polygon.
4, discrete hot plate system in the photolithography guide rail equipment according to claim 2, it is characterized in that, described several discrete hot plates adopt nonconcentric(al) polygon, refer to that the center of each discrete hot plate is inconsistent, can N/D ground amalgamation and the covering area heated of wanting.
According to discrete hot plate system in each described photolithography guide rail equipment of claim 1-4, it is characterized in that 5, all discrete hot plates all can be by independently heating and cooling, to be controlled temperature separately.
According to discrete hot plate system in each described photolithography guide rail equipment of claim 1-4, it is characterized in that 6, this discrete hot plate system can be realized the Temperature Distribution of silicon chip heating by each discrete hot plate is set different temperature respectively.
7, discrete hot plate system in the photolithography guide rail equipment according to claim 1, it is characterized in that, the cold drawing of the preceding baking when described discrete hot plate system can be used as gluing, the hot plate of soft baking and cooling silicon chip, or be used as the hot plate of the back baking when developing, hard baking and the cold drawing of cooling silicon chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007100941344A CN101408738A (en) | 2007-10-12 | 2007-10-12 | Split vertical type hot plate system in photolithography guide rail equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007100941344A CN101408738A (en) | 2007-10-12 | 2007-10-12 | Split vertical type hot plate system in photolithography guide rail equipment |
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| CN101408738A true CN101408738A (en) | 2009-04-15 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNA2007100941344A Pending CN101408738A (en) | 2007-10-12 | 2007-10-12 | Split vertical type hot plate system in photolithography guide rail equipment |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102445857A (en) * | 2011-10-12 | 2012-05-09 | 上海华力微电子有限公司 | Temperature control silicon wafer stage of photo-etching machine |
| CN102541119A (en) * | 2012-01-18 | 2012-07-04 | 上海华力微电子有限公司 | Temperature control method for hot plate |
| CN102103333B (en) * | 2009-12-17 | 2013-08-14 | 上海微电子装备有限公司 | Method for baking photoresist and device using method |
| CN106125520A (en) * | 2016-08-12 | 2016-11-16 | 京东方科技集团股份有限公司 | Photoresist front-drying method, device and lithographic equipment |
-
2007
- 2007-10-12 CN CNA2007100941344A patent/CN101408738A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102103333B (en) * | 2009-12-17 | 2013-08-14 | 上海微电子装备有限公司 | Method for baking photoresist and device using method |
| CN102445857A (en) * | 2011-10-12 | 2012-05-09 | 上海华力微电子有限公司 | Temperature control silicon wafer stage of photo-etching machine |
| CN102445857B (en) * | 2011-10-12 | 2013-10-02 | 上海华力微电子有限公司 | Temperature control silicon wafer stage of photo-etching machine |
| CN102541119A (en) * | 2012-01-18 | 2012-07-04 | 上海华力微电子有限公司 | Temperature control method for hot plate |
| CN106125520A (en) * | 2016-08-12 | 2016-11-16 | 京东方科技集团股份有限公司 | Photoresist front-drying method, device and lithographic equipment |
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Application publication date: 20090415 |