CN117637543A - Silicon wafer trimming method and silicon wafer processing equipment - Google Patents
Silicon wafer trimming method and silicon wafer processing equipment Download PDFInfo
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- CN117637543A CN117637543A CN202311615703.0A CN202311615703A CN117637543A CN 117637543 A CN117637543 A CN 117637543A CN 202311615703 A CN202311615703 A CN 202311615703A CN 117637543 A CN117637543 A CN 117637543A
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- China
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- silicon wafer
- temperature
- deionized water
- target
- trimming
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 133
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 133
- 239000010703 silicon Substances 0.000 title claims abstract description 133
- 238000000034 method Methods 0.000 title claims abstract description 45
- 238000009966 trimming Methods 0.000 title claims abstract description 34
- 239000008367 deionised water Substances 0.000 claims abstract description 56
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 56
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 56
- 238000007730 finishing process Methods 0.000 claims abstract description 4
- 230000007423 decrease Effects 0.000 claims description 2
- 230000003750 conditioning effect Effects 0.000 claims 1
- 230000008602 contraction Effects 0.000 abstract description 9
- 235000012431 wafers Nutrition 0.000 description 111
- 230000000694 effects Effects 0.000 description 3
- 230000006978 adaptation Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The application provides a silicon wafer trimming method and silicon wafer processing equipment. The silicon wafer trimming method comprises the following steps: detecting a first temperature of the surface of the target silicon wafer in the finishing process; determining a second temperature according to the first temperature and the flatness requirement of the target silicon wafer; and in the trimming process, deionized water with the second temperature is supplied to the target silicon wafer. According to the embodiment of the invention, the temperature of the deionized water is adjusted to supply the deionized water with the second temperature to the target silicon wafer in the process of trimming the target silicon wafer, so that the influence on the surface flatness of the silicon wafer caused by expansion or contraction of the silicon wafer due to temperature difference can be reduced, and the quality of the silicon wafer can be improved.
Description
Technical Field
The application relates to the technical field of semiconductor processing, in particular to a silicon wafer trimming method and silicon wafer processing equipment.
Background
In the process of processing a silicon wafer, in order to improve the surface defects caused by the processes such as cutting and the like and improve the surface flatness, the surface of the silicon wafer needs to be ground, and the appearance of the silicon wafer can be changed in the grinding process of the silicon wafer, so that in the process of processing the silicon wafer, the appearance of the silicon wafer needs to be trimmed by utilizing diamond and the like after a period of processing, and the trimming effect of the existing silicon wafer trimming mode on the silicon wafer needs to be improved.
Disclosure of Invention
The invention aims to provide a silicon wafer trimming method and silicon wafer processing equipment, so as to improve the flatness of the surface of a silicon wafer trimming process.
In a first aspect, an embodiment of the present disclosure provides a method for trimming a silicon wafer, including the steps of:
detecting a first temperature of the surface of the target silicon wafer in the finishing process;
determining a second temperature according to the first temperature and the flatness requirement of the target silicon wafer;
and in the trimming process, deionized water with the second temperature is supplied to the target silicon wafer.
In some of these embodiments, the difference in temperature between the first temperature and the second temperature decreases as the flatness requirement increases.
In some of these embodiments, the first temperature and the second temperature are equal.
In some embodiments, the detecting the first temperature of the surface of the target silicon wafer during the trimming process includes:
respectively detecting first temperatures of a central area and an edge area of the target silicon wafer;
the step of supplying deionized water with the second temperature to the target silicon wafer comprises the following steps:
and respectively supplying deionized water with corresponding temperature to the central area and the edge area of the target silicon wafer according to the temperature of the central area and the temperature of the edge area of the target silicon wafer.
In a second aspect, embodiments of the present application provide a silicon wafer processing apparatus configured to perform the silicon wafer trimming method according to any one of the first aspects.
In some of these embodiments, the silicon wafer processing apparatus includes:
the first temperature sensor is used for detecting a first temperature of the surface of the target silicon wafer;
the temperature control component is used for adjusting the temperature of deionized water to be a second temperature, wherein the second temperature is determined according to the first temperature and the flatness requirement of the target silicon wafer;
and the supply assembly is used for supplying deionized water with the second temperature to the target silicon wafer in the trimming process.
In some of these embodiments, the silicon wafer processing apparatus further comprises:
and the second temperature sensor is used for detecting the initial temperature of the deionized water.
In some of these embodiments, the supply assembly includes a first supply line for supplying deionized water to a central region of the target silicon wafer and a second supply line for supplying deionized water to an edge region of the target silicon wafer.
According to the embodiment of the invention, the temperature of the deionized water is adjusted to supply the deionized water with the second temperature to the target silicon wafer in the process of trimming the target silicon wafer, so that the influence on the surface flatness of the silicon wafer caused by expansion or contraction of the silicon wafer due to temperature difference can be reduced, and the quality of the silicon wafer can be improved.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present disclosure, the drawings that are needed in the description of the embodiments of the present disclosure will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present disclosure, and other drawings may be obtained according to these drawings without inventive effort to a person of ordinary skill in the art.
Fig. 1 is a schematic flow chart of a silicon wafer trimming method according to an embodiment of the disclosure.
Detailed Description
The following description of the technical solutions in the embodiments of the present disclosure will be made clearly and completely with reference to the accompanying drawings in the embodiments of the present disclosure, and it is apparent that the described embodiments are some embodiments of the present disclosure, but not all embodiments. All other embodiments, which can be made by one of ordinary skill in the art without inventive effort, based on the embodiments in this disclosure are intended to be within the scope of this disclosure.
The embodiment of the application provides a silicon wafer trimming method.
The technical scheme of the embodiment is used for trimming the upper surface and the lower surface of the silicon wafer, wherein the upper surface and the lower surface refer to the upper surface and the lower surface which are round.
As shown in fig. 1, in one embodiment, the method comprises the steps of:
step 101: and detecting a first temperature of the surface of the target silicon wafer in the finishing process.
In the technical scheme of the embodiment, in the process of grinding the target silicon wafer, the first temperature of the surface of the target silicon wafer is detected first, and when the method is implemented, the temperature detection of the surface of the silicon wafer can be realized by using the silicon wafer temperature sensor.
Step 102: and determining a second temperature according to the first temperature and the flatness requirement of the target silicon wafer.
After the first temperature is determined, the flatness requirements for the target silicon wafer are further determined.
In the process of trimming the silicon wafer, deionized water needs to be supplied to the surface of the silicon wafer, and the inventor of the application finds that the influence on the flatness of the surface of the silicon wafer is at least influenced by the temperature change of the surface of the silicon wafer. Specifically, in the trimming process, there is a certain difference between the surface temperature of the silicon wafer and the temperature of Deionized water (DIW) to be supplied, and this difference causes slight expansion or contraction of the surface of the silicon wafer due to thermal expansion or contraction, in other words, a certain deformation of the silicon wafer occurs, so that after trimming the silicon wafer, a certain influence is exerted on the flatness of the upper and lower surfaces of the silicon wafer.
In this embodiment, in order to reduce such slight expansion or contraction, a certain influence is exerted on the flatness of the upper and lower surfaces during the trimming process of the silicon wafer, and the corresponding second temperature is determined according to the required flatness requirement.
It is understood that the smaller the difference between the first temperature and the second temperature, the smaller the difference in flatness of the wafer surface due to the difference between the wafer surface and the deionized water. Therefore, in this embodiment, if the flatness requirement for the silicon wafer is higher, the temperature difference between the second temperature of the supplied deionized water and the first temperature of the target silicon wafer surface is correspondingly controlled to be smaller, so that the influence of deformation of the silicon wafer surface caused by temperature change on the flatness of the silicon wafer is reduced.
In some of these embodiments, the first temperature is equal to the second temperature, and it is understood that when the first temperature is equal to the second temperature, the effect on the wafer surface flatness due to expansion or contraction of the wafer caused by the temperature difference can be minimized.
Step 103: and in the trimming process, deionized water with the second temperature is supplied to the target silicon wafer.
After the second temperature is determined, the temperature of the deionized water is adjusted through the temperature adjusting device, and in the process of trimming the target silicon wafer, the deionized water with the second temperature is supplied to the target silicon wafer, so that the influence on the surface flatness of the silicon wafer caused by expansion or contraction of the silicon wafer due to the temperature difference is reduced.
In some embodiments, in order to improve the temperature control precision of the deionized water, a temperature sensor can be further arranged to detect the initial temperature of the deionized water, so that the heating or cooling control of the deionized water can be more accurately performed according to the first temperature and the initial temperature of the deionized water, and the temperature difference between the deionized water and the surface of the silicon wafer is reduced.
In this embodiment, a heater or a cooler may be provided to adjust the temperature of the deionized water, specifically, in one embodiment, after the temperature of the surface of the silicon wafer and the initial temperature of the deionized water are detected by the sensor, respectively, the temperature of the deionized water is adjusted by the heater or the cooler.
That is, if the initial temperature of the deionized water is greater than the temperature of the wafer surface, the temperature of the deionized water is reduced to be substantially equal to the temperature of the wafer surface by the cooler, and if the initial temperature of the deionized water is less than the temperature of the wafer surface, the deionized water is heated to be substantially equal to the temperature of the wafer surface by the heater.
In general, in the process of trimming a silicon wafer, heat on the surface of the silicon wafer is continuously accumulated due to continuous friction between the silicon wafer and the polishing pad, that is, the temperature of the silicon wafer is generally higher than the room temperature in the process of trimming the silicon wafer, so in the embodiment, the temperature of deionized water is mainly adjusted through a heater.
In the grinding process, continuously detecting the first temperature of the surface of the target silicon wafer and the initial temperature of the supplied deionized water, and then controlling to heat or cool the supplied deionized water according to the temperature difference between the first temperature and the initial temperature, so that the temperature difference between the second temperature of the deionized water supplied to the target silicon wafer and the first temperature is smaller than the temperature difference determined according to the flatness requirement of the target silicon wafer, the closed-loop control of the second temperature of the deionized water is realized, and the influence on the flatness of the surface of the silicon wafer caused by the expansion or contraction of the silicon wafer due to the temperature difference between the target silicon wafer and the deionized water is reduced, thereby being beneficial to improving the quality of the target silicon wafer.
In some of these embodiments, step 101 comprises:
respectively detecting first temperatures of a central area and an edge area of the target silicon wafer;
step 103 comprises:
and respectively supplying deionized water with corresponding temperature to the central area and the edge area of the target silicon wafer according to the temperature of the central area and the temperature of the edge area of the target silicon wafer.
It should be understood that in the process of trimming a silicon wafer, each carrier bears a plurality of silicon wafers, and each carrier revolves around the center of the grinding device, and simultaneously, each carrier rotates, in this process, different positions of the carrier are different relative to the rotation linear speed of the silicon wafer processing device, so that certain differences may exist in temperature, in this embodiment, the temperatures of different regions of the silicon wafer are further detected, specifically, the temperatures of the center region and the edge region of the silicon wafer are respectively adhered to, deionized water with different temperatures is specifically supplied to the corresponding regions, so that the temperature of the deionized water can be controlled more accurately, the influence of expansion or contraction of the silicon wafer caused by the temperature difference of the target silicon wafer and the deionized water on the surface evenness of the silicon wafer can be reduced, and the quality of the target silicon wafer can be improved.
The application also provides silicon wafer processing equipment which is configured to execute the steps of the silicon wafer grinding method embodiment.
In some of these embodiments, the silicon wafer processing apparatus includes:
the first temperature sensor is used for detecting a first temperature of the surface of the target silicon wafer;
the second temperature sensor is used for detecting the initial temperature of deionized water;
the temperature control component is used for adjusting the temperature of deionized water to be a second temperature, wherein the second temperature is determined according to the first temperature, the flatness requirement on the target silicon wafer and the initial temperature;
and the supply assembly is used for supplying deionized water with the second temperature to the target silicon wafer in the trimming process.
In some of these embodiments, the supply assembly includes a first supply line for supplying deionized water to a central region of the target silicon wafer and a second supply line for supplying deionized water to an edge region of the target silicon wafer
The silicon wafer processing device of the present embodiment is used for implementing each step of the above-mentioned silicon wafer double-sided developing method embodiment, and can implement the same or similar technical effects, which are not described herein again.
While the foregoing is directed to the preferred implementation of the disclosed embodiments, it should be noted that numerous modifications and adaptations to those skilled in the art may be made without departing from the principles of the disclosure, and such modifications and adaptations are intended to be within the scope of the disclosure.
Claims (8)
1. The silicon wafer trimming method is characterized by comprising the following steps of:
detecting a first temperature of the surface of the target silicon wafer in the finishing process;
determining a second temperature according to the first temperature and the flatness requirement of the target silicon wafer;
and in the trimming process, deionized water with the second temperature is supplied to the target silicon wafer.
2. The method of claim 1, wherein the difference between the first temperature and the second temperature decreases as the flatness requirement increases.
3. The method of claim 2, wherein the first temperature and the second temperature are equal.
4. The method of claim 1, wherein detecting a first temperature of the surface of the target silicon wafer during the conditioning process comprises:
respectively detecting first temperatures of a central area and an edge area of the target silicon wafer;
the step of supplying deionized water with the second temperature to the target silicon wafer comprises the following steps:
and respectively supplying deionized water with corresponding temperature to the central area and the edge area of the target silicon wafer according to the temperature of the central area and the temperature of the edge area of the target silicon wafer.
5. A silicon wafer processing apparatus configured to perform the silicon wafer trimming method according to any one of claims 1 to 6.
6. The silicon wafer processing apparatus according to claim 5, wherein the silicon wafer processing apparatus comprises:
the first temperature sensor is used for detecting a first temperature of the surface of the target silicon wafer;
the temperature control component is used for adjusting the temperature of deionized water to be a second temperature, wherein the second temperature is determined according to the first temperature and the flatness requirement of the target silicon wafer;
and the supply assembly is used for supplying deionized water with the second temperature to the target silicon wafer in the trimming process.
7. The silicon wafer processing apparatus according to claim 6, further comprising:
and the second temperature sensor is used for detecting the initial temperature of the deionized water.
8. The wafer processing apparatus of claim 5, wherein the supply assembly comprises a first supply line for supplying deionized water to a central region of the target wafer and a second supply line for supplying deionized water to an edge region of the target wafer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311615703.0A CN117637543A (en) | 2023-11-29 | 2023-11-29 | Silicon wafer trimming method and silicon wafer processing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311615703.0A CN117637543A (en) | 2023-11-29 | 2023-11-29 | Silicon wafer trimming method and silicon wafer processing equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117637543A true CN117637543A (en) | 2024-03-01 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311615703.0A Pending CN117637543A (en) | 2023-11-29 | 2023-11-29 | Silicon wafer trimming method and silicon wafer processing equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN117637543A (en) |
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2023
- 2023-11-29 CN CN202311615703.0A patent/CN117637543A/en active Pending
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