CN101403482A - 高反射率发光二极管芯片反射灯罩的制造方法 - Google Patents
高反射率发光二极管芯片反射灯罩的制造方法 Download PDFInfo
- Publication number
- CN101403482A CN101403482A CNA2008101306428A CN200810130642A CN101403482A CN 101403482 A CN101403482 A CN 101403482A CN A2008101306428 A CNA2008101306428 A CN A2008101306428A CN 200810130642 A CN200810130642 A CN 200810130642A CN 101403482 A CN101403482 A CN 101403482A
- Authority
- CN
- China
- Prior art keywords
- reflection lampshade
- veil
- led chip
- lampshade
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 17
- 229910052751 metal Inorganic materials 0.000 claims abstract description 53
- 239000002184 metal Substances 0.000 claims abstract description 53
- 239000000758 substrate Substances 0.000 claims abstract description 51
- 238000000034 method Methods 0.000 claims abstract description 40
- 230000005291 magnetic effect Effects 0.000 claims abstract description 25
- 238000000576 coating method Methods 0.000 claims abstract description 8
- 239000011248 coating agent Substances 0.000 claims abstract description 7
- 230000000694 effects Effects 0.000 claims description 14
- 238000001771 vacuum deposition Methods 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 5
- 238000007747 plating Methods 0.000 claims description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 4
- 239000004922 lacquer Substances 0.000 claims description 4
- 230000012447 hatching Effects 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 claims description 3
- 238000007254 oxidation reaction Methods 0.000 claims description 3
- 239000003973 paint Substances 0.000 claims description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- 239000004411 aluminium Substances 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 239000011651 chromium Substances 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 230000037452 priming Effects 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000011787 zinc oxide Substances 0.000 claims description 2
- 238000009499 grossing Methods 0.000 claims 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 claims 1
- 230000001795 light effect Effects 0.000 claims 1
- 239000002966 varnish Substances 0.000 claims 1
- 238000001579 optical reflectometry Methods 0.000 abstract description 4
- 238000002310 reflectometry Methods 0.000 abstract description 3
- 238000012805 post-processing Methods 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
- 230000008569 process Effects 0.000 description 12
- 238000005538 encapsulation Methods 0.000 description 11
- 238000001746 injection moulding Methods 0.000 description 8
- 239000000843 powder Substances 0.000 description 6
- 239000002390 adhesive tape Substances 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000004568 cement Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 229920000426 Microplastic Polymers 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000003064 anti-oxidating effect Effects 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 230000005294 ferromagnetic effect Effects 0.000 description 1
- 230000005307 ferromagnetism Effects 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 230000035876 healing Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- 238000009504 vacuum film coating Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/60—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction
- F21K9/68—Details of reflectors forming part of the light source
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16245—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Optics & Photonics (AREA)
- General Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Non-Portable Lighting Devices Or Systems Thereof (AREA)
- Led Device Packages (AREA)
Abstract
本发明是关于一种高反射率发光二极管芯片反射灯罩的制造方法。在反射罩内的基板上以磁性物质遮蔽物吸附于基板上以遮蔽一对金属接触垫再进行真空镀膜及其后处理。本发明的制造方法可以达到反射灯罩具有高光反射率的效果。
Description
技术领域
本发明是一种有关于发光二极管芯片反射灯罩的制作方法,特别是指以磁性或导磁材料作为反射灯罩后段处理的遮蔽物,对射出成形的反射灯罩进行真空镀膜,以达到反射灯罩具有高光反射率效果的一种制作方法。
背景技术
就功率消耗与环保考虑,发光二极管显著优于传统灯泡。再加上制造技术的大幅进步,发光二极管已由过去单颗毫瓦等级进步到今日的数瓦等级,应用面则由过去只能做为灯号指示器,至今已是重要的照明器具之一。举凡汽机车的后照灯、前照大灯,液晶显示器的背光模块、交通号志都可以看到其应用的足迹。相信不久的未来,发光二极管可能就会取代所有的传统灯泡变成家庭照明的主力。这其中的进展,除了发光二极管芯片本身新材料的发现功不可没外,LED封装基板的散热能力也一直与LED的功率大小息息相关。
此外,当上述问题都获得某种程度的解决之后,还有一可以在不增加额外能源消耗下增加流明的,便是,在LED封装模块加入高反射率的反射灯罩。
传统发光二极管芯片封装单位胞1,请同时参考图1A所示的俯视示意图及图1B所示的前视图,包含一绝缘基底10,绝缘基板10可以是玻璃纤维基板或环氧基板。绝缘基底10上外围部分提供以承载或粘贴一反射灯罩11。反射灯罩11内的基板10上则具有一金属接触对12A、12B,以提供LED芯片5的P、N两个电极连接之用。
LED芯片5的P、N两电极,可以是在不同侧的,如图1B所示,LED芯片5的底部电极(P或N)直接和金属接触对中的12B连接,再以另一导线3由顶部电极打线以连接金属接触对中的12A。
当然,LED芯片5的P、N两个电极也可以是在同一侧的如图1C所示,它是以覆晶方式粘着于金属接触对12A、12B。LED芯片5朝上的面则是透明的。如此,光线可以完全不被导线3或芯片5本身顶部电极的遮蔽。和图1B所示的示意图的另一不同处是:基板是具有良好导热导电的金属基板20。金属基板20并包含一注入绝缘胶的隔离沟7以分隔两个电极。这样可以获得更佳的散热能力,适用于较大瓦数LED芯片封装。上述金属基板20也可应用于LED芯片两电极不同侧,同样,绝缘基板10也可应用于覆晶式LED芯片。
不管是图1B或图1C的基板10、20,基板上都包含一反射灯罩11以提高光反射率。
反射灯罩11未必都是圆锥状,为了设计或外观需要反射灯罩11有时是椭圆形的或抛物线形。例如图1A所示示意图中,反射灯罩11便是椭圆形的。而这些形状的反射灯罩11并不易直接以金属片机械加工,最简单而可行的便是先形成反射灯罩11的模具,再以塑料颗粒或粉末进行射出成型。
射出成形法制造的反射灯罩11,通常使用白色粉末,如二氧化钛、珍珠粉、白精或其它稍具反射能力的粉末,再加入塑料粒去进行以制成各式形状的白色反射灯罩11。以射出成形法制造的反射灯罩11如果未再进一步处理,它们普遍性地问题是:受限于射出成形的粉末或颗粒大小,反射灯罩11内表面不是镜面的,相反的是一粗糙面。
粗糙表面的白色反射灯罩11,其实对增加反射率以提高照明流明的贡献有限。
为此,如何将反射灯罩11进行镜面处理对业者而言是一重要但却不易处理的问题。首先要面对的问题是:反射灯罩11是非导体的,因此,它不适合于直接进行电镀处理,最多是整批浸镀完再一一粘贴于基板10或20上。另一现有技术是将一片以射出成形法形成包含多个反射灯罩再将其粘着于一大片包含导线架的基板上,最后再分割为LED封装单位胞。包含导线架的基板是指基板上已形成了复数个金属接触对。每一金属接触对对应一反射灯罩,图1B中的反射灯罩11、绝缘基底10及金属接触对即为其中一LED封装单位胞的一例。
问题来了,当反射灯罩内包含金属接触对时,反射灯罩的镀膜处理必须防止金属接触对12A、12B镀膜过程中被短路或被绝缘。亦即,镀膜处理前至少要先将反射灯罩11内的一金属接触对12A、12B遮蔽,以免当镀膜是金属膜时造成短路,或者当涂布亮光漆时,造成金属接触对12A、12B被绝缘。但以图1B所示的反射灯罩11其实它的尺寸是很小的,常见的情况是外宽只有2mm至3mm而已,而内径之小就更不用说了,以胶带粘贴于反射灯罩11内以遮蔽金属接触对12A、12B,胶带粘贴的一缺点是尺寸太小不易粘贴,再者是胶带和反射灯罩11的材质是相近的,当镀膜同时形成于反射灯罩11的表面时也同时形成于胶带上,而当镀膜形成后去除胶带的同时也可能将反射灯罩11上的部分镀膜剥离。再一者是胶带残留物的问题。
现有,另一遮蔽金属接触对12A、12B的方法是制作有柄的遮蔽体13。如图2A和图2B所示,利用有柄遮蔽体13将金属接触对12A、12B遮住。再进行镀膜。它的好处是容易放置,可回收重复使用,也没有污染的问题,但它的缺点是柄所在的位置同时也遮蔽了反射灯罩11的部分表面而造成反射面的死角15。
发明内容
有鉴于此,本发明的一目的便是提供一种新的方法解决上述问题。
本发明的主要目的是提供一种有关于发光二极管芯片反射灯罩的制作方法,其制成过程如下:
首先提供一基板,基板上包含以射出成形法形成的一反射灯罩,该反射灯罩内基板表面上具有一金属接触对;然后,提供一具导磁特性的遮蔽物体;之后,将该导磁遮蔽物置入该反射灯罩内的该基板上以遮盖该金属接触对;接着置另一磁铁或电磁铁于该基板下方,用以固定该遮蔽物;进行真空镀膜步骤以形成具反射能力的一金属膜于该反射灯罩上;形成一顶部漆体层于该反射灯罩上;最后移除该遮蔽物。
在另一实施例中,真空镀金属膜后,再形成透明氧化膜以保护金属膜。
本发明的制造方法可以达到反射灯罩具有高光反射率的效果。
附图说明
图1A是LED封装平面基板的俯视图。
图1B是LED封装平面基板的前视图,包含绝缘基板及PN不同侧LED。
图1C是LED封装平面基板的前视图,包含金属基板及PN同侧LED。
图2A是现有技术平面基板的俯视图,包含一有柄的遮蔽物的上视图。
图2B是现有技术平面基板的前视图,包含一有柄的遮蔽物的上视图。
图3A是依据本发明的一实施例,在LED封装平面基板内反射灯罩内置一磁性遮蔽物,以便于进行反射灯罩的镀膜或镜面处理。
图3B是依据本发明的一实施例的前视图,LED封装平面基板上有一遮蔽物,以便于进行反射灯罩的镀膜或镜面处理。
图3C是依据本发明的一实施例的前视图,LED封装平面基板上有一遮蔽物,基板下有磁铁以固定该遮蔽物,以便于进行反射灯罩的镀膜或镜面处理本发明的实施例前视图。
图4是本发明的实施例以重力去除磁性遮蔽物的示意图。
附图标号:
1 发光二极管芯片封装单位胞 5 发光二极管
7 绝缘胶隔离沟 3 导线
10 绝缘基底 11 反射灯罩
12A 金属接触对的其中一个 12B 金属接触对的其中一个
13 有柄遮蔽物 14 磁铁
15 反射面死角 16 遮蔽物
20 金属基板
具体实施方式
有鉴于现有技术的诸多缺点,本发明所提出的高反射率发光二极管芯片反射灯罩的制造方法,具有方法简单,成本低的优点,以下将详细说明:
本发明所使用的发光二极管基板不限于图1B所示的绝缘基底10或是图1C所示的具有导热导电的金属基板20皆可使用本发明的方法对射出成形的反射灯罩11进行镜面处理以提高反射率。
不管是图1B的绝缘基底10或图1C的导电导热金属基板20上都有一对金属接触对12A、12B,因此,在反射灯罩11镜面处理就必须至少先遮蔽反射灯罩11包围的基板表面上的金属接触对12A、12B,以防止镜面处理时金属接触对12A、12B的电极短路,或使金属接触对12A、12B被完全绝缘或部分绝缘。
依据本发明的一较佳实施例,导磁特性的遮蔽物16是以挤压、冲压等压铸法或粉末冶金法在固定模具内加入磁粉加压加温烧结制成,或对大片的导磁体,施以裁剪法形成所要的形状,其中该导磁遮蔽物16形状依据该反射灯罩11内所包围的基板表面的形状而调整。如图3A、图3B所示,随后,将导磁遮蔽物16置入该反射灯罩11内以遮蔽包含金属接触对12A、12B的上表面。该遮蔽物16高度基本上以不产生阴影效果(shading effect)为最佳,除非要制造特殊色彩例外。以使反射灯罩11镀膜或镜面处理过程,不会被遮蔽物16的阴影所影响。一可行的方式是遮蔽物16和漏斗形反射罩底部并留有一空隙w1,如图3A的上视图及图3B的前视图所示。这样的好处是容易置入且也易移除。此外,也可减少遮蔽物高度所产生的阴影效果(shading effect)。
请参考图3C所示,将一磁铁14或电磁铁14于基板10下方直接或间接对导磁遮蔽物16产生吸引以固定之。研究发现,磁铁14或电磁铁14的南北极(S,N pole)可以垂直于基板10、20置放,更佳的实施例是把南北极水平置放,这样,磁力线的水平分布对遮蔽物16的平稳效果更佳。而对于一片上有复数个反射灯罩的导线架基板而言,每一单位胞就对应有一小磁铁,又比共享大磁铁为佳。
紧接着,将基板10置入真空镀膜室以进行镀膜步骤。真空室的真空度约为10-3至10-6torr(拖耳),愈高的真空镀膜愈纯净,相对地成本也会增加。镀膜的材料可以自由选择银、铝、铬,镍及其任意组合的群组其中之一。在金属膜形成后,也可选择再形成透明氧化膜于金属膜上,以防止氧化。真空镀膜可以是化学气相沉积法、蒸镀或物理溅镀法沉积。氧化层可以是氧化硅层、氮化硅层、氧化锌层、氧化铟锡层其中任一种,只要具有较低活性的透明氧化膜即可。
在另一较佳实施例中,真空镀膜进行前,反射灯罩11选择性的先在反射灯罩11表面施以喷雾法以形成一耐热底漆。如此,将可以使镀膜效果更佳。
在另一较佳实施例中,真空镀膜进行时,可配合变化改变遮蔽物16高度的形状,例如,调整斜度以成各式楔形、或高低不平的几何图形,再分别进行镀膜,以形成具有渐层效果的多层膜于反射灯罩11上。以达到变化反光颜色的效果。
完成真空镀膜并移出真空室后,选择在金属反射镀膜上,再依据设计美学,喷上透明或特定颜色的树脂或涂漆或特殊图案,以保护金属镀膜防止氧化,另一方面,则达到装饰的效果。
请参考图4,在真空镀膜完成之后,最后移除磁铁14或关闭电磁铁的电力,以重力去除磁性遮蔽物16。若有移除困难(主因为磁性遮蔽物16上和反射灯罩11同时都有镀膜)可以另一相斥的磁力移除磁性遮蔽物16。磁性遮蔽物16可以重复使用。
上述实施例中,是以遮蔽物16具铁磁性,基板10、20下以磁铁和电磁铁14进行磁力吸附。磁力吸附也可以变化为遮蔽物16是磁铁,而其基板10、20下则是具铁磁性的金属14。或两者俱为磁铁。
本发明具有以下的优点:
1、固定磁性遮蔽物16的方式简单,且磁性遮蔽物16可重复使用。
2、磁性遮蔽物16与射出成形的反射灯罩11材质不同,因此,一般而言镀膜不会紧密将磁性遮蔽物16与反射灯罩11粘贴,很容易移除。
3、可依需要设计磁性遮蔽物16图案而达到变化镀膜图案的目的。
4、与现有技术相比,本发明的磁性遮蔽物16不需要额外的柄,因此,镀膜均匀无死角。
5、上述本发明的反射灯罩镜面处理方法也可应用于较大型的反射灯罩,即反射灯罩所包围的基板并不限于只有一金属接触对,一LED芯片。它的内部也可以有多个金属接触对,对应于多个LED芯片或共阴极的金属接触、多个分立阳极。
以上所述者,仅为本发明的较佳实施例,当不能以之限制本发明范围。即凡依本发明权利要求范围所做的均等变化及修饰,仍将不失本发明的要义所在,亦不脱离本发明的精神和范围,故都应视为本发明的进一步实施状况。
Claims (10)
1.一种发光二极管芯片反射灯罩的制造方法,所述的方法至少包含下列步骤:
提供一基板,基板上有一反射灯罩,所述的反射灯罩内基板表面上具有至少一金属接触对;
提供一具导磁特性的遮蔽物体;
将所述的导磁遮蔽物体置入所述的反射灯罩内的所述的基板上以遮盖所述的金属接触对;
置另一磁铁或电磁铁于所述的基板下方,用以固定所述的遮蔽物;
进行真空镀膜步骤以形成一金属膜于所述的反射灯罩上;及
移除所述的遮蔽物。
2.如权利要求1所述的发光二极管芯片反射灯罩的制造方法,所述的方法更包含在形成所述的金属膜之前、固定所述的遮蔽物之后先形成一层底漆或油漆在所述的反射灯罩上,用以使所述的基板和所述的反射灯罩表面平滑。
3.如权利要求1所述的发光二极管芯片反射灯罩的制造方法,所述的方法更包含在金属膜形成后移除所述的遮蔽物步骤之前,将包含所述的反射灯罩的基板及固定所述的遮蔽物移的磁铁或电磁铁移到真空室外,再形成一漆体层于所述的反射灯罩上的金属膜上以防止所述的金属膜氧化。
4.如权利要求3所述的发光二极管芯片反射灯罩的制造方法,其中上述的漆体层一透明或有色耐热透明漆。
5.如权利要求1所述的发光二极管芯片反射灯罩的制造方法,所述的方法更包含在金属膜形成后移除所述的遮蔽物步骤之前形成一透明氧化层于所述的反射灯罩上的金属膜上以防止所述的金属膜氧化。
6.如权利要求1所述的发光二极管芯片反射灯罩的制造方法,其中上述的透明氧化层是选自由氧化硅层、氮化硅层、氧化锌、氧化铟锡其中的任一种。
7.如权利要求1所述的发光二极管芯片反射灯罩的制造方法,其中所述的遮蔽物和所述的反射灯罩之间保有一间隙,所述的间隙随所述的遮蔽物高度而调整,以降低遮蔽物高度的阴影效果。
8.如权利要求1所述的发光二极管芯片反射灯罩的制造方法,所述的方法更包含调整所述的遮蔽物倾斜度和高低以达到镀层渐层效果或产生柔和光线效果或产生装饰所述的反射灯罩的周围特定区图案的效果。
9.如权利要求1所述的发光二极管芯片反射灯罩的制造方法,其中真空电镀材料选自具反射能力的银、铝、铬、镍及其任意组合其中之一。
10.如权利要求1所述的发光二极管芯片反射灯罩的制造方法,所述的方法更包含分次调镀多层膜于所述的反射灯罩上。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US99742407P | 2007-10-02 | 2007-10-02 | |
US60/997,424 | 2007-10-02 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101403482A true CN101403482A (zh) | 2009-04-08 |
CN101403482B CN101403482B (zh) | 2010-08-18 |
Family
ID=40506940
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2008101306428A Expired - Fee Related CN101403482B (zh) | 2007-10-02 | 2008-07-02 | 高反射率发光二极管芯片反射灯罩的制造方法 |
Country Status (2)
Country | Link |
---|---|
US (1) | US8916032B2 (zh) |
CN (1) | CN101403482B (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107740060A (zh) * | 2017-10-27 | 2018-02-27 | 中山市汉庭照明科技有限公司 | 一种制备具有高反射纳米涂层的大功率led灯灯罩的方法 |
CN107794502A (zh) * | 2017-10-27 | 2018-03-13 | 中山市汉庭照明科技有限公司 | 一种具有高反射纳米涂层的大功率 led 灯灯罩 |
CN107815655A (zh) * | 2017-10-27 | 2018-03-20 | 中山市汉庭照明科技有限公司 | 一种制备低发热量灯具保护罩的方法 |
CN108796448A (zh) * | 2018-06-19 | 2018-11-13 | 东莞市钜欣电子有限公司 | 一种能增强光效的闪光灯罩的制备工艺 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105222016A (zh) * | 2015-10-14 | 2016-01-06 | 常州市万泰模具有限公司 | 氧化膜式路灯 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5045344A (en) * | 1989-11-16 | 1991-09-03 | Vapor Technologies, Inc. | Method of making reflective articles |
US5589280A (en) * | 1993-02-05 | 1996-12-31 | Southwall Technologies Inc. | Metal on plastic films with adhesion-promoting layer |
US5752139A (en) * | 1995-11-27 | 1998-05-12 | Fuji Xerox Co., Ltd. | Dual-component magnetic brush developing device |
US6406988B1 (en) * | 1998-04-24 | 2002-06-18 | Amerasia International Technology, Inc. | Method of forming fine pitch interconnections employing magnetic masks |
JP2002261333A (ja) * | 2001-03-05 | 2002-09-13 | Toyoda Gosei Co Ltd | 発光装置 |
KR100490534B1 (ko) * | 2001-12-05 | 2005-05-17 | 삼성에스디아이 주식회사 | 유기 전자 발광 소자의 박막 증착용 마스크 프레임 조립체 |
US20050066897A1 (en) * | 2003-09-29 | 2005-03-31 | Seagate Technology Llc | System, method and aperture for oblique deposition |
-
2008
- 2008-03-25 US US12/055,067 patent/US8916032B2/en not_active Expired - Fee Related
- 2008-07-02 CN CN2008101306428A patent/CN101403482B/zh not_active Expired - Fee Related
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107740060A (zh) * | 2017-10-27 | 2018-02-27 | 中山市汉庭照明科技有限公司 | 一种制备具有高反射纳米涂层的大功率led灯灯罩的方法 |
CN107794502A (zh) * | 2017-10-27 | 2018-03-13 | 中山市汉庭照明科技有限公司 | 一种具有高反射纳米涂层的大功率 led 灯灯罩 |
CN107815655A (zh) * | 2017-10-27 | 2018-03-20 | 中山市汉庭照明科技有限公司 | 一种制备低发热量灯具保护罩的方法 |
CN108796448A (zh) * | 2018-06-19 | 2018-11-13 | 东莞市钜欣电子有限公司 | 一种能增强光效的闪光灯罩的制备工艺 |
CN108796448B (zh) * | 2018-06-19 | 2021-03-30 | 东莞市钜欣电子有限公司 | 一种能增强光效的闪光灯罩的制备工艺 |
Also Published As
Publication number | Publication date |
---|---|
US20090084670A1 (en) | 2009-04-02 |
US8916032B2 (en) | 2014-12-23 |
CN101403482B (zh) | 2010-08-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US9406851B2 (en) | Surface-textured encapsulations for use with light emitting diodes | |
CN102842667B (zh) | 发光二极管封装结构及其制造方法 | |
CN101403482B (zh) | 高反射率发光二极管芯片反射灯罩的制造方法 | |
US9356211B2 (en) | Optoelectronic component and method of producing an optoelectronic component | |
CN1848463A (zh) | 基于金属线路板的led白光光源 | |
TW200952221A (en) | Light-emitting device and the manufacturing method thereof | |
CN204391150U (zh) | 改良的发光二极管封装结构 | |
CN103354266A (zh) | 一种薄型圆片级led的封装结构及其封装方法 | |
CN2935478Y (zh) | 具透光性表面黏着发光二极管支架构造 | |
CN102683546B (zh) | 半导体封装结构与其制造方法 | |
CN102222665B (zh) | 带薄型复眼透镜的集成led模块 | |
CN102506316A (zh) | 扩光led灯 | |
CN202948973U (zh) | 荧光粉层、led封装单元及led封装系统 | |
CN101608748A (zh) | 发光装置及其制造方法 | |
CN103035816A (zh) | 发光模块及其发光装置 | |
CN101930932A (zh) | Led发光模块制程方法 | |
CN202188450U (zh) | 一种led模组及照明装置 | |
CN209944043U (zh) | 一种照明模组以及一种灯具 | |
CN203979910U (zh) | Cob-led光源及灯具 | |
CN203466213U (zh) | Led封装结构及灯具 | |
CN202546307U (zh) | 扩光led灯 | |
CN207558826U (zh) | 一种可调焦的led封装体 | |
CN204029851U (zh) | 一种led集成封装基板 | |
CN204577465U (zh) | 增加蓝光芯片亮度的背面多层反射金属层 | |
TW200921004A (en) | Method of forming reflector with high reflectivity for LED |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C17 | Cessation of patent right | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20100818 Termination date: 20120702 |