CN101377958B - Method for monitoring flash memory wiping/writing performance - Google Patents
Method for monitoring flash memory wiping/writing performance Download PDFInfo
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- CN101377958B CN101377958B CN2007100940568A CN200710094056A CN101377958B CN 101377958 B CN101377958 B CN 101377958B CN 2007100940568 A CN2007100940568 A CN 2007100940568A CN 200710094056 A CN200710094056 A CN 200710094056A CN 101377958 B CN101377958 B CN 101377958B
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Abstract
The invention discloses a method for monitoring the erasing and writing performance of a flash memory, which adopts the method of shrinking specification for carrying out the test of the erasing and writing performance, and comprises the following steps: (1) a stricter specification is set in the test procedure of the erasing and writing performance, thereby allowing the specification to be larger than the actually used specification; (2) the invalid times of erasing and writing by once erasing and writing and the invalid times of erasing and writing by repeated twice erasing and writing of each test object under the specification which is set by step (1) are recorded; (3) the ratio of the two recorded times of erasing and writing of each test object in the step (2) is calculated, the ratio is subject to data processing, and the ratio is used for monitoring the erasing and writing performance. The adoption of the method can shorten the test time for monitoring the erasing and writing performance at the same time of ensuring the accuracy of the monitoring of the erasing and writing performance.
Description
Technical field
The invention belongs to the integrated circuit testing field, relate in particular to a kind of method of monitoring flash memory wiping/writing performance.
Background technology
Wiping/writing performance (endurance) is one of important indicator of flash memory products reliability performance.The method for supervising of existing flash memory wiping/writing performance, all be that tested object (chip chip or module block) is carried out constantly erasable action, directly erasable twice number of times or erasable always arriving to the customer requirement specification lost efficacy, though do the wiping/writing performance that can accurately reflect product like this, the problem of this method maximum is consuming time oversize.As: for certain flash memory products, the customer requirement wiping/writing performance guarantees 100K, when doing the wiping/writing performance monitoring, measures 200K usually.Suppose that the erasable time once is 10ms, most of product can both reach the erasable number of times of 200K, and so the average erasable time of every product is 10ms * 200K=2000s, disregards call duration time, and the erasable time is the test duration.Suppose 20 samples of test in every month, spend time 2000s * 20=11.11h altogether.
Someone attempts to shorten the test duration by tightening test specification, but effect is not so good.Because we find, when technology is vicissitudinous, may draw opposite conclusion.Traditional method that tightens specification generally is by setting up a tighter specification, making it use specification to carry out the test of flash memory wiping/writing performance greater than reality.As shown in Figure 1, the 2nd measuring point almost is 1/10th of a ultimate failure point, illustrates to adopt traditional method that tightens specification, has saved for 90% test duration; The 1st measuring point of technology 1 obviously is better than the 1st measuring point of technology 2, and still, the ultimate failure point of technology 1 but is worse than technology 2.Though this can save the test duration with tightening test specification with regard to instruction book, can not obtain wiping/writing performance evaluation conclusion accurately.
Summary of the invention
The technical problem to be solved in the present invention provides a kind of method of monitoring flash memory wiping/writing performance, when guaranteeing wiping/writing performance monitoring accuracy, can shorten the test duration of wiping/writing performance monitoring.
For solving the problems of the technologies described above, the invention provides a kind of method of monitoring flash memory wiping/writing performance, adopt the method that tightens specification to carry out the wiping/writing performance test, comprise the steps:
(1) in the wiping/writing performance test procedure, sets up a tighter specification, make it use specification greater than reality;
Erasable number of times that lost efficacy when (2) each tested object being recorded under the specification that step (1) sets up erasable 1 time and the erasable number of times when repeating erasable still lost efficacy for 2 times;
(3) calculate the ratio of each tested object erasable number of times of two records in step (2), this ratio is carried out data processing, monitor wiping/writing performance with this ratio.
In the step (1), the described tighter specification of setting up is that cell (storage unit) electric current drops to 75% of initial value.
In the step (3), describedly this ratio is carried out data processing be specially: this ratio is done the distribution of lognormality, and the relatively distribution and the very distribution (golden wafer) of sheet of this lognormality, main average and the slope that relatively distributes draws the conclusion of wiping/writing performance monitoring at last.
The distribution of the distribution of described relatively this lognormality and good sheet is mainly as follows: at first, obtain the distribution of the lognormality of benchmark wafer, extract two distribution parameter averages and slope, reference value as later monitoring, distribute according to this, determine the distribution range of average and the distribution range of slope; Then, obtain the distribution of the lognormality of monitor wafer, see its average and slope whether in average and slope distribution scope that the said reference wafer is determined, if, then meet base standard, if not, then need to continue to analyze whether meet base standard.
Compare with prior art, the present invention has following beneficial effect: the present invention is on traditional accelerated test basis, do not need erasable the arriving of tested object (chip or block) lost efficacy, can judge exactly whether the wiping/writing performance of this product is stable, and save for 90% test duration.
Description of drawings
Fig. 1 adopts traditional method that tightens specification, and the erasable number of times of the different wafer of product of the same race (wafer) compares (weibull (weber) distribution) synoptic diagram under different process (technology 1 and the technology 2) different size;
Fig. 2 (a), Fig. 2 (b) and Fig. 2 (c) adopt the inventive method, and the wiping/writing performance of 6 pieces of different wafer (technology 2) under different test specifications compares (weibull distribution) synoptic diagram in continuous 6 months;
Fig. 3 is the distribution of ratio between two measuring point among Fig. 2 (lognormal distribution) synoptic diagram;
Fig. 4 adopts the inventive method, the distribution situation synoptic diagram of ratio between (technology 1 and technology 2) two measuring point when technology changes;
Fig. 5 is the wiping/writing performance test flow chart of the inventive method.
Wherein, technology 1 and technology 2 all adopt existing 0.25um embedded flash memory technology, and the difference of technology 1 and technology 2 only is that the size of ground floor metal is different.
Embodiment
The present invention is further detailed explanation below in conjunction with drawings and Examples.
The method of monitoring flash memory wiping/writing performance of the present invention adopts the method that tightens specification to carry out the wiping/writing performance test, mainly comprises the steps:
1. in the wiping/writing performance test procedure, set up a tighter specification, usually this specification is made as the cell electric current and drops to 75% of initial value; This specification should be a scope in theory, as long as use specification greater than reality.
2. in the wiping/writing performance test process, to 2 erasable number of times points of each tested object (chip or block) record: the 1st the erasable number of times the during first time erasable inefficacy when be specification with 75% is designated as the 1st measuring point; The 2nd for 75% being specification, and the erasable number of times of crash still after continuous erasable 3 times (promptly repeating erasable 2 times) is designated as the 2nd measuring point; The testing process that the reference by location of physical record point is shown in Figure 5 specifically comprises the steps:
1) open circuit/short-circuit test if pass through, then forwards 2 to), otherwise, the test End of Interrupt;
2) read an internal code, this code reflects that this chip whether by middle survey (CP1), if pass through, then forwards 3 to), otherwise, the test End of Interrupt;
3) full sheet is carried out " wiping " action, has wiped full sheet is read " 1 ",, forward 4 to if pass through), otherwise, the test End of Interrupt;
4) power supply electrifying forwards 5 to);
5) to being carried out " wiping " action, read " 1 " with tight specification (this tight specification is the tighter specification of setting up in the step 1) after having wiped,, then forward 6 to if pass through by evaluation object (full sheet or module)), otherwise forward 7 to);
6) full sheet is write " 0 " and is read " 0 ",, then forward 10 to if pass through), otherwise, the test End of Interrupt;
7) the erasable number of times of record is " the 1st measuring point ", and, read " 1 " with tight specification (this tight specification is the tighter specification of setting up in the step 1) after having wiped, if pass through to being carried out " wiping " action by evaluation object (full sheet or module), then forward 6 to), otherwise forward 8 to);
8) to being carried out " wiping " action, read " 1 " with tight specification (this tight specification is the tighter specification of setting up in the step 1) after having wiped,, then forward 6 to if pass through by evaluation object (full sheet or module)), otherwise forward 9 to);
9) the erasable number of times of record is " the 2nd measuring point "; The test End of Interrupt;
10) judge erasable number of times whether less than 1000 times (these 1000 times is the stability for program, and each in theory erasable flow process all will be done upper and lower electricity, for save the test duration, Cai with 1000 power-on and power-off 1 time), if then forward 11 to), otherwise forward 5 to);
11) power supply is electric down, forwards 12 to);
12) whether the number of times of judging upper and lower electricity less than 600 times (this is 600 less important to being adjusted by the virtual rating of evaluation object, in this flow process, will be by erasable 1000 * 600,=60 ten thousand times by evaluation object), if, end of test (EOT) then, otherwise forward 4 to).
Wherein, " pass " expression is by this test among Fig. 5, and " fail " expression is not by this test.
3. calculate the ratio of each tested object two measuring point in step 2, and do lognormal (lognormality) distribution;
4. to certain baseline wafer (benchmark wafer), with step 1-3, obtain lognormal and distribute, extract the reference value (recommend with multi-disc baseline wafer obtain the reference value of distribution parameter) of two distribution parameters---average and slope---as later monitoring.Distribute according to this, determine the distribution range of average and the distribution range of slope (common using+/-10% is not fixed, and decides on product requirement);
5. to monitoring wafer (wafer), with step 1-3, after obtaining lognormal and distributing, see in the scope whether average and slope determine in step 4.If, then meet baseline (benchmark) standard, if not, then need to continue to analyze whether meet baseline standard (can measure the considered repealed point).
Fig. 2 and Fig. 3 have shown that the present invention is applied in the situation of certain product in six months (adopting process 2), by Fig. 2 and Fig. 3 as seen, 6 pieces of wafer of a certain product in continuous 6 months, the distribution of ratio is very stable between two measuring point, this stable distribution with the considered repealed point of 6 pieces of wafer is consistent, and feasibility of the present invention has been described.
As shown in Figure 4, the present invention is applied in identical product, but technology changes two pieces of wafer of (technology 1 and technology 2) to some extent when going up, and also great changes have taken place in the distribution of the ratio between two measuring point, reflected the variation of technology exactly, this has proved the accuracy of this method for supervising.
Claims (3)
1. the method for a monitoring flash memory wiping/writing performance is characterized in that, adopts the method that tightens specification to carry out the wiping/writing performance test, comprises the steps:
(1) in the wiping/writing performance test procedure, sets up a tighter specification, make it use specification greater than reality;
Erasable number of times that lost efficacy when (2) each tested object being recorded under the specification that step (1) sets up erasable 1 time and the erasable number of times when repeating erasable still lost efficacy for 2 times;
(3) calculate the ratio of each tested object erasable number of times of two records in step (2), this ratio is carried out data processing, monitor wiping/writing performance with this ratio; Describedly this ratio is carried out data processing be specially: this ratio is done the distribution of lognormality, and relatively distribution and the distribution of benchmark wafer, the relatively average of Fen Buing and the slope of this lognormality.
2. the method for monitoring flash memory wiping/writing performance as claimed in claim 1 is characterized in that, in the step (1), the described tighter specification of setting up be memory cell current drop to initial value 75%.
3. the method for monitoring flash memory wiping/writing performance as claimed in claim 1, it is characterized in that, the distribution of the distribution of described relatively this lognormality and benchmark wafer is mainly as follows: at first, obtain the distribution of the lognormality of benchmark wafer, extract two distribution parameter averages and slope, as the reference value of later monitoring, distribute according to this, determine the distribution range of average and the distribution range of slope; Then, obtain the distribution of the lognormality of monitor wafer, see its average and slope whether in average and slope distribution scope that the said reference wafer is determined, if, then meet base standard, if not, then need to continue to analyze whether meet base standard.
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| CN2007100940568A CN101377958B (en) | 2007-08-31 | 2007-08-31 | Method for monitoring flash memory wiping/writing performance |
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| CN2007100940568A CN101377958B (en) | 2007-08-31 | 2007-08-31 | Method for monitoring flash memory wiping/writing performance |
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| CN101377958A CN101377958A (en) | 2009-03-04 |
| CN101377958B true CN101377958B (en) | 2010-12-15 |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1470058A (en) * | 2000-09-14 | 2004-01-21 | 三因迪斯克公司 | Compressed event counting technique and application to a flash memory system |
| JP2005032375A (en) * | 2003-07-09 | 2005-02-03 | Matsushita Electric Ind Co Ltd | Semiconductor memory and its testing method |
| CN1670937A (en) * | 2004-03-18 | 2005-09-21 | 富士通株式会社 | Non-volatile memory evaluating method and non-volatile memory |
| CN1982908A (en) * | 2005-12-13 | 2007-06-20 | 上海华虹Nec电子有限公司 | Method for real-time generating flash-storage testing vector |
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- 2007-08-31 CN CN2007100940568A patent/CN101377958B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1470058A (en) * | 2000-09-14 | 2004-01-21 | 三因迪斯克公司 | Compressed event counting technique and application to a flash memory system |
| JP2005032375A (en) * | 2003-07-09 | 2005-02-03 | Matsushita Electric Ind Co Ltd | Semiconductor memory and its testing method |
| CN1670937A (en) * | 2004-03-18 | 2005-09-21 | 富士通株式会社 | Non-volatile memory evaluating method and non-volatile memory |
| CN1982908A (en) * | 2005-12-13 | 2007-06-20 | 上海华虹Nec电子有限公司 | Method for real-time generating flash-storage testing vector |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20131216 |
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