CN101376232B - Chemical mechanical polishing method capable of enhancing polishing performance - Google Patents
Chemical mechanical polishing method capable of enhancing polishing performance Download PDFInfo
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- CN101376232B CN101376232B CN2007100454818A CN200710045481A CN101376232B CN 101376232 B CN101376232 B CN 101376232B CN 2007100454818 A CN2007100454818 A CN 2007100454818A CN 200710045481 A CN200710045481 A CN 200710045481A CN 101376232 B CN101376232 B CN 101376232B
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Abstract
The invention provides a chemical mechanical polishing method which can improve the polishing performance. In the prior art, the first polishing period is terminated according to a detected polishing end point, so that the whole polishing process is difficult to control, and the problems of poor polishing performance occur, such as over-polishing recess, corrosion or remained polished layer. The chemical mechanical polishing method comprises a first polishing period and a second polishing period. The pressure of the first polishing period is higher than that of the second polishing period. The method comprises the following steps: firstly counting the total time of the first polishing period and the second polishing period; setting the time of the first polishing period to be 60 percent to 80 percent of the total time, and conducting the polishing of the first period according to the set time; conducting the polishing of the second period and detecting the polishing end point, and stopping the polishing of the second period when the polishing end point is detected. The invention can greatly improve the controllability of the polishing process, thereby avoiding the phenomena of poor polishing performance, such as over-polishing recess, corrosion or remained polished layer.
Description
Technical field
The present invention relates to chemical Mechanical Polishing Technique, relate in particular to a kind of cmp method that improves polishing performance.
Background technology
After making tungsten plug, copper metal line and fleet plough groove isolation structure, all need be by chemically mechanical polishing (Chemical Mechanical Polishing; Be called for short CMP) with useless and tungsten that influence the crystal column surface pattern, copper and trench filling are removed so that wafer planarizationization, now to tungsten, the CMP of copper and shallow trench filler includes phase I polishing and second stage polishing, the phase I pressure of polishing polishes greater than second stage, this phase I and second stage polishing all stop polishing according to detected polishing end point, and the CMP board utilizes copper, tungsten and trench filling are different with the reflectivity of insulating medium layer under it or drive the polishing end point that principle that the electric current of the motor of grinding table changes along with the carrying out of planarization and the transformation of polishing film etc. detects phase I and second stage.When detecting the terminal point of phase I polishing, the CMP board stops the phase I polishing by flip flop equipment, and the polishing of beginning second stage, when the CMP board detects the terminal point of second stage polishing, stop the second stage polishing, so promptly finished polishing copper, tungsten and trench filling by flip flop equipment.
But the phase I polishing that above-mentioned pressure is bigger stops polishing according to detected polishing end point, cause polishing performance not good easily, as depression (dishing) occurs and corrode (erosion) excessive, therefore be necessary to reduce the time that the phase I high pressure is polished.Can cause polishing not enough and to stay tungsten, copper and trench filling residual again yet the time of phase I polishing is too short.
Therefore, how to provide a kind of cmp method that improves polishing performance to improve polishing performance, become the technical problem that industry needs to be resolved hurrily to improve the phase I polishing.
Summary of the invention
The object of the present invention is to provide a kind of cmp method that improves polishing performance, can improve polishing performance by described method.
The object of the present invention is achieved like this: a kind of cmp method that improves polishing performance, be used to remove polished layer so that wafer planarizationization, this method comprises phase I polishing and second stage polishing, wherein, the pressure of this phase I polishing polishes greater than second stage, and this cmp method that can improve polishing performance may further comprise the steps: (1) statistics draws the total time of phase I polishing and second stage polishing; (2) time set that will polish the phase I is 60% to 80% of this total time, and carries out the phase I according to the time that sets and polish; (3) carry out second stage polishing and detect its polishing end point, when detecting polishing end point, stop the second stage polishing.
In the cmp method of above-mentioned improved polishing performance, in step (1), draw the total time of this phase I and second stage polishing by the polishing time of adding up actual polishing process.
In the cmp method of above-mentioned improved polishing performance, the total time of this phase I and second stage polishing is 50 seconds.
In the cmp method of above-mentioned improved polishing performance, this polished layer is a tungsten film.
In the cmp method of above-mentioned improved polishing performance, the polish pressure scope of this phase I polishing is 27 to 28 kPas, and polishing time is 30 to 40 seconds.
In the cmp method of above-mentioned improved polishing performance, the polish pressure scope of this second stage polishing is 10 to 11 kPas, and polishing time is 10 to 20 seconds.
In the cmp method of above-mentioned improved polishing performance, this polished layer is a copper film.
In the cmp method of above-mentioned improved polishing performance, the polish pressure scope of this phase I polishing is 20 to 21 kPas, and polishing time is 30 to 40 seconds.
In the cmp method of above-mentioned improved polishing performance, the polish pressure scope of this second stage polishing is 6 to 7 kPas, and polishing time is 10 to 20 seconds.
In the cmp method of above-mentioned improved polishing performance, in step (3), detect the terminal point of this second stage polishing by optical detection.
Stop polishing with the polishing of bigger phase I of pressure in the prior art according to detected polishing end point and occurred throwing the not good problems of polishing performance such as depression and corrosion or polished layer be residual and compare, the cmp method that improves polishing performance of the present invention draws according to statistics will polish and be made as regularly polishing and its time accounts for 60% to 80% of total time polishing total time the phase I, so can avoid stopping mistake that the phase I polishing caused again and throw the not good phenomenons of polishing performance such as depression and corrosion or polished layer be residual after detecting polishing end point.
Description of drawings
The cmp method that improves polishing performance of the present invention is provided by following embodiment and accompanying drawing.
Fig. 1 is the flow chart that improves the cmp method of polishing performance of the present invention.
The specific embodiment
Below will be described in further detail the cmp method that improves polishing performance of the present invention.
The cmp method that improves polishing performance of the present invention is used to remove polished layer so that wafer planarizationization, and wherein, described polished layer can be embodied as tungsten film, copper film or fleet plough groove isolation structure etc.
Referring to Fig. 1, the cmp method that improves polishing performance of the present invention at first carries out step S10, statistics draws the total time of phase I polishing and second stage polishing, wherein, the total time that draws described phase I and second stage polishing by the polishing time of adding up actual polishing process is 50 seconds, is subjected to polished layer thickness, character, the used consumptive material of CMP (polishing fluid, polishing pad etc.), CMP parameter that the influence of factors such as (pressure, rotating speed, polishing fluid flows) is set described total time.
Then continue step S11, the time set that will polish the phase I is 60% to 80% of total time, and carries out the phase I according to the time that sets and polish.
Then continue step S12, carry out the second stage polishing and detect its polishing end point, when detecting polishing end point, stop the second stage polishing.
In the first embodiment of the present invention, described polished layer is a tungsten film, the polish pressure scope of the phase I polishing of described tungsten film correspondence is 27 to 28 kPas, polishing time is 30 to 40 seconds, the polish pressure scope of the second stage polishing of described tungsten film correspondence is 10 to 11 kPas, polishing time is 10 to 20 seconds, and the phase I of described tungsten film and the used abrasive material of second stage polishing are silica (SiO
2), detect the terminal point that this second stage is polished by optical detection.
In the second embodiment of the present invention, described polished layer is a copper film, the polish pressure scope of the phase I polishing of described copper film correspondence is 20 to 21 kPas, polishing time is 30 to 40 seconds, the polish pressure scope of the described second stage polishing of described copper film correspondence is 6 to 7 kPas, polishing time is 10 to 20 seconds, and the phase I of described copper film and the used abrasive material of second stage polishing are silica or aluminium oxide (Al
2O
3), detect the terminal point that this second stage is polished by optical detection.
Experimental data proves, the polishing of finishing by the cmp method that improves polishing performance of the present invention has overcome the residual problem of polished layer, and make the planarization effect obtain obvious improvement, depression has reduced by 20%, corrodes and has reduced by 36% to 47%.
In sum, the cmp method that improves polishing performance of the present invention draws according to statistics will polish and be made as regularly polishing and its time accounts for 60% to 80% of total time polishing total time the phase I, so can avoid stopping mistake that the phase I polishing caused again and throw the not good phenomenons of polishing performance such as depression and corrosion or polished layer be residual after detecting polishing end point.
Claims (8)
1. cmp method that can improve polishing performance, be used to remove polished layer so that wafer planarizationization, this method comprises phase I polishing and second stage polishing, wherein, the pressure of this phase I polishing polishes greater than second stage, it is characterized in that this cmp method that can improve polishing performance may further comprise the steps: (1) statistics draws the total time of phase I polishing and second stage polishing; (2) time set that will polish the phase I is 60% to 80% of this total time, and carries out the phase I according to the time that sets and polish; (3) carry out second stage polishing and detect its polishing end point, when detecting polishing end point, stop the second stage polishing.
2. the cmp method that improves polishing performance as claimed in claim 1 is characterized in that, in step (1), draws the total time of this phase I and second stage polishing by the polishing time of adding up actual polishing process.
3. the cmp method that improves polishing performance as claimed in claim 2, the total time of this phase I and second stage polishing is 50 seconds.
4. the cmp method that improves polishing performance as claimed in claim 1 is characterized in that, this polished layer is a tungsten film.
5. the cmp method that improves polishing performance as claimed in claim 4, it is characterized in that, the polish pressure scope of this phase I polishing is 27 to 28 kPas, polishing time is 30 to 40 seconds, the polish pressure scope of this second stage polishing is 10 to 11 kPas, and polishing time is 10 to 20 seconds.
6. the cmp method that improves polishing performance as claimed in claim 1 is characterized in that, this polished layer is a copper film.
7. the cmp method that improves polishing performance as claimed in claim 6, it is characterized in that, the polish pressure scope of this phase I polishing is 20 to 21 kPas, polishing time is 30 to 40 seconds, the polish pressure scope of this second stage polishing is 6 to 7 kPas, and polishing time is 10 to 20 seconds.
8. the cmp method that improves polishing performance as claimed in claim 1 is characterized in that, in step (3), detects the terminal point of this second stage polishing by optical detection.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2007100454818A CN101376232B (en) | 2007-08-31 | 2007-08-31 | Chemical mechanical polishing method capable of enhancing polishing performance |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2007100454818A CN101376232B (en) | 2007-08-31 | 2007-08-31 | Chemical mechanical polishing method capable of enhancing polishing performance |
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| Publication Number | Publication Date |
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| CN101376232A CN101376232A (en) | 2009-03-04 |
| CN101376232B true CN101376232B (en) | 2010-06-16 |
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| CN2007100454818A Expired - Fee Related CN101376232B (en) | 2007-08-31 | 2007-08-31 | Chemical mechanical polishing method capable of enhancing polishing performance |
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Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101941180B (en) * | 2009-07-09 | 2012-09-26 | 中芯国际集成电路制造(上海)有限公司 | Chemically mechanical polishing method |
| CN101961852B (en) * | 2009-07-24 | 2012-06-27 | 中芯国际集成电路制造(上海)有限公司 | Chemical mechanical grinding method for interlayer dielectric layer |
| CN102126181B (en) * | 2010-01-14 | 2013-04-10 | 中芯国际集成电路制造(上海)有限公司 | Chemical mechanical polishing method |
| CN102452039A (en) * | 2010-10-19 | 2012-05-16 | 上海宏力半导体制造有限公司 | Chemical-mechanical grinding method |
| CN102689265B (en) | 2011-03-22 | 2015-04-29 | 中芯国际集成电路制造(上海)有限公司 | Chemical mechanical polishing method |
| CN102922415B (en) * | 2011-08-10 | 2015-05-13 | 无锡华润上华科技有限公司 | Chemical mechanical polishing method capable of prolonging service life of polishing pad |
| CN102672598A (en) * | 2012-05-22 | 2012-09-19 | 上海宏力半导体制造有限公司 | Grinding pad using method and wafer grinding method |
| CN103394994B (en) * | 2013-07-18 | 2017-12-15 | 上海集成电路研发中心有限公司 | A kind of polishing method of wafer |
| CN104979277B (en) * | 2014-04-11 | 2019-06-14 | 中国科学院微电子研究所 | Process method for chemical mechanical planarization of device with size of below 40nm |
| CN105081891A (en) * | 2014-05-07 | 2015-11-25 | 盛美半导体设备（上海）有限公司 | Method of preventing abrasive particles from embedding into wafer surface in chemical mechanical grinding process |
| JP2024509159A (en) * | 2021-03-03 | 2024-02-29 | アプライド マテリアルズ インコーポレイテッド | Temperature-controlled removal rate in CMP |
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