CN101369599A - Ohm contact of gallium nitride base device and preparation method thereof - Google Patents
Ohm contact of gallium nitride base device and preparation method thereof Download PDFInfo
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- CN101369599A CN101369599A CNA2008102120534A CN200810212053A CN101369599A CN 101369599 A CN101369599 A CN 101369599A CN A2008102120534 A CNA2008102120534 A CN A2008102120534A CN 200810212053 A CN200810212053 A CN 200810212053A CN 101369599 A CN101369599 A CN 101369599A
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Abstract
The invention discloses an ohmic contact of a GaN-based apparatus and a manufacturing method thereof, belonging to the technical field of semiconductors. The ohmic contact of the GaN-based apparatus is composed of a titanium metal layer, an aluminum metal layer, a barrier metal layer and a gold metal layer; the titanium metal layer is contacted with the ohmic contact of the GaN-based apparatus, the aluminum metal layer is covered on the titanium metal layer, the barrier metal layer and the gold metal layer are covered on the titanium metal layer and the aluminum metal layer in sequence, wherein, the titanium metal layer and the aluminum metal layer are overlapped in two to ten periods. Compared with the prior ohmic contact structure, the invention balances low ohmic contact ratio based on the ohmic contact of a multilayer Ti/Al structure, has good surface appearance and high reliability, can improve the combination property of the ohmic contact, and has an important meaning for realizing the GaN-based apparatus with high performance and high reliability.
Description
Technical field
The invention relates to the gallium-nitride-based devices in the technical field of semiconductors, be specifically related to ohmic contact of a kind of gallium-nitride-based devices and preparation method thereof.
Background technology
The device that with AlGaN/GaN is material foundation is referred to as gallium-nitride-based devices, AlGaN/GaN hetero junction field effect pipe (heterostructure field effect transistors for example, HFET), heterojunction bipolar transistor (heterostructure bipolar transistor, HBT) etc.Gallium-nitride-based devices has advantages such as working temperature height, breakdown field is powerful, cut-off frequency is high, power density is big, is the first-selection in following microwave high power field, more becomes the nearly research emphasis in microwave power device field during the last ten years.
Be different from traditional Si device, the GaN system, gallium-nitride-based devices can not form ohmic contact by semi-conducting material is carried out heavy doping, detailed process is: at first pass through the metal that magnetron sputtering or electron beam evaporation deposit need on semi-conductive surface, (temperature Centralized is in 750 ℃～900 ℃ then they to be carried out rapid thermal annealing, time is 30S～60S), could form the ohmic contact that meets the requirements afterwards.Therefore, in the formation of gallium-nitride-based devices, ohmic contact can influence the knee voltage of device, total mutual conductance, so that gross output, and the pattern of ohmic contact further also can influence the subsequent optical carving technology of device, the microwave noise characteristic of device, so the reliability of gallium-nitride-based devices ohmic contact has directly determined the reliability of device.
The ohmic contact of the gallium-nitride-based devices of now having reported at present, comprises:
1, the research of earliest period is to utilize Ti/Al or the such double-decker of Al/Ti---earlier at the semiconductor surface depositing metal, and rapid thermal annealing under nitrogen atmosphere then.This technology can not obtain less specific contact resistivity rate, because the easy oxidation of metal.
2, technology progressively develops, and the Ti/Al/Au three-decker occurs, and the Au on top layer is used to protect ohmic metal not oxidated.But do not obtain desirable specific contact resistivity rate (1E-6 Ω .cm
2).
3, subsequently, gallium-nitride-based devices ohmic contact technology four layers of metal structure: Ti/Al/Ni (Pt, Mo, Ti, Ir etc. the)/Au that adopt more.Wherein with Ti/Al/Ni/Au and Ti/Al/Mo/Au for the most extensive.This ohmic contact preparating mechanism is: and the immediate Ti of AlGaN/GaN heterostructure, in the process of rapid thermal annealing and AlGaN/GaN react, from the GaN system, capture the N element, reaction generates TiN and also causes the N room in the GaN system.TiN is the material of a kind of low work function (3.7ev), the ohmic metal that helps forming; And the N room is the n type doping in the GaN system, the good ohmic metal of also favourable formation.Reaction for auxiliary Ti and GaN system; on Ti, cover Al; in order to protect Ti; the metal of two kinds of easy oxidations of Al is not oxidized; the Au of adequate thickness need be covered topmost,, one deck barrier metal need be between Au and Al, added in order to stop the sinking of Au; as Ni, Pt, Mo, Ti, Ir etc., constitute the ohmic contact of Ti/Al/Ni/Au system.
At present, researcher's energy focuses mostly on the annealing conditions of seeking optimum Ti/Al ratio and optimum.But in actual result, the effect of finding the Al in the ohmic contact of above-mentioned Ti/Al/Ni/Au system not only as above-mentioned institute say that its effect also needs further research; And as the Ni of barrier metal, the also counterdiffusion between barrier metal fully, the concrete role of these metals also will further be studied.This is because in the process of rapid thermal annealing, Ti and Al at first react in the time of 250 ℃ and generate TiAl
3How many materials of this Heat stability is good, its amount have determined the amount of the Ti-Al (alloy or simple two kinds of metals) of remaining energy and the reaction of GaN system, have determined the quality of ohmic contact.Therefore, the ohmic contact of gallium-nitride-based devices such as AlGaN/GaN HFET has greatly attracted researcher's attentiveness.
Summary of the invention
The object of the present invention is to provide ohmic contact of a kind of gallium-nitride-based devices and preparation method thereof, the electric property of this ohmic contact and Heat stability is good, its surperficial projection size diminishes, the evenness height.
Technical scheme of the present invention is:
A kind of ohmic contact of gallium-nitride-based devices, form by titanium coating, aluminum metal layer, barrier metal layer and gold metal layer, wherein, with the gallium-nitride-based devices ohmic contact be titanium coating, covering aluminum metal layer on the titanium coating, on titanium coating and aluminum metal layer, cover barrier metal layer and gold metal layer successively, it is characterized in that, 2～10 cycles of the overlapping arrangement of above-mentioned titanium coating and aluminum metal layer.
Described titanium coating gross thickness is 20～50nm.
The thickness of described titanium coating and aluminum metal layer is than being 1:2～1:12.
Described barrier metal layer adopts a kind of in nickel, platinum, molybdenum, titanium and the iridium.
A kind of preparation method of ohmic contact of gallium-nitride-based devices, its step comprises:
1) at the surface of gallium-nitride-based devices difference deposit titanium coating as claimed in claim 1, aluminum metal layer, barrier metal layer and gold metal layer;
2) above-mentioned metal level is carried out rapid thermal annealing, form ohmic contact.
Adopt magnetron sputtering or electron beam evaporation technique deposited metal in the step 1).
After the step 1), the gallium-nitride-based devices of deposited metal is ultrasonic in acetone, form ohm figure.
Step 2) adopt the double annealing mode in, promptly the temperature range of annealing is 800～900 ℃ for the first time, and the time is 20～45 seconds; The temperature range of annealing is 400～600 ℃ for the second time, and the time is 60～180 seconds.
Compared with prior art, the invention has the beneficial effects as follows:
The present invention has adopted the ohmic contact based on multilayer Ti/Al structure, and it is split into several parts with Ti/Al under the situation of gross thickness that keeps Ti and Al and constant rate, and then covers the Ni/Au structure.It has solved the problem that exists in traditional four-layer structure ohmic contact well.The reasons are as follows:
1, increased the contact interface of Ti/Al, made their reactions more even, and form the wider TiAl that distributes
3Thereby, improved the ohmic contact thermal stability.Simultaneously, sandwich construction has fully been fixed the effluent of Al.
2, reduced absolute thickness, the severe degree of reaction is alleviated, improved thermal stability near the Ti/Al of GaN system.
Than traditional ohmic contact structure, the ohmic contact that the present invention is based on multilayer Ti/Al structure can be taken into account low than ohmic contact rate (the obtainable contact resistance of unit contact area, the specific contact resistivity rate is low more, total Ohmic resistance is more little), good surface topography and high reliability index, improve the combination property of ohmic contact, further improve the practicability of gallium nitride HFET device, significant for the gallium-nitride-based devices of realizing high-performance, high reliability.
Description of drawings
Fig. 1 is a conventional structure Ti/Al/Ni/Au ohmic contact structural representation; Wherein, 1-gold metal layer; 2-barrier metal layer; 3-aluminum metal layer; 4-titanium coating; 5-gallium-nitride-based devices.
Fig. 2 is an ohmic contact structural representation of the present invention; Wherein, 1-gold metal layer; 2-barrier metal layer; 3-aluminum metal layer; 4-titanium coating; 5-gallium-nitride-based devices.
Fig. 3 is the pattern comparison diagram of the present invention and traditional structure ohmic contact.
Embodiment
Below in conjunction with the drawings and specific embodiments the present invention is described in further detail:
With AlGaN/GaN HFET device is example, and concrete technical scheme is as follows:
(1) lithographic device ohmic metal structure domain;
(2) deposit of metal-layer structure is adopted magnetron sputtering deposit Ti 5nm successively, Al 30nm, Ti 5nm, Al 30nm, Ti 5nm, Al 30nm, Ti 5nm, Al 30nm, Ni 50nm, Au 200nm.
(3) peel off: the device print of depositing metal is ultrasonic in acetone, forms ohm figure.
(4) rapid thermal annealing: with the cleaned quick anneal oven of putting into then of device print, adopt the twice annealing scheme: the temperature range of annealing is 800～900 ℃ for the first time, and the time is 30S; The temperature range of annealing is 400～600 ℃ for the second time, and the time is 120S.
The resistivity of the ohmic contact of present embodiment and traditional structure ohmic contact compares:
| ρ C(Ω·cm 2) | R C(Ω·mm) | |
| Traditional structure Ti/Al/Ni/Au (20/120/50/200nm) | 1.32E-05 | 0.752 |
| Structure Ti/Al/....Ni/Au of the present invention (5/30....50/200nm) | 8.74E-07 | 0.22 |
The pattern of present embodiment ohmic contact and traditional ohmic contact compares: in Fig. 3, (a) (b) be the surface topography of traditional structure ohmic contact, as seen its pattern is relatively poor, and under high power, as seen the crack is arranged in protrusion of surface, and this will influence the high frequency characteristics of device greatly; In Fig. 3, (c) (d) is the surface topography of ohmic contact of the present invention.The projection of visible surface reduces (can be drawn by photo medium scale amount) greatly, and does not have the crack on the visible projection under high power, and this can improve the high frequency characteristics of device greatly.
The high high-temp stability of present embodiment ohmic contact and traditional ohmic contact compares: found through experiments, ohmic contact of the present invention can wear out 8 hours under 400 ℃ of high temperature and make the variation of specific contact resistivity rate very little; And the traditional structure ohmic contact was through 2 hours serious degradations.
The related device of the foregoing description is not limited to the explanation of this example, not only can be AlGaN/GaN HFET device, can also be AlGaN/GaN HBT, GaN base LED, laser, gallium-nitride-based devices such as GaN base ultraviolet light detector.
Among the present invention, the foregoing description provides a kind of gallium-nitride-based devices ohmic contact structure and preparation scheme optimized, the present invention not only is confined to this embodiment, can make corresponding modification with designing requirement according to actual needs, for example: it is 4 that the arrangement cycle of titanium coating and aluminum metal layer is provided among the embodiment, but the arrangement of corresponding titanium coating and aluminum metal layer can be 2-10 cycles.
Described titanium coating gross thickness is 20～50nm, and the thickness of described titanium coating and aluminum metal layer is than being 1:2～1:12.And barrier metal layer can be in nickel, platinum, molybdenum, titanium and the iridium any one.
In addition, provide the method for magnetron sputtering deposited metal among the embodiment, but corresponding structure can realize also by electron beam evaporation technique.
In addition, the annealing region first time of double annealing scheme is 800～900 ℃, and the time is 20～45S; Annealing region is 400～600 ℃ for the second time, and the time is 60～180 seconds.
More than by specific embodiment the ohmic contact of gallium-nitride-based devices of the present invention has been described, it will be understood by those of skill in the art that in the scope that does not break away from essence of the present invention, can make certain deformation or modification to the present invention; Its preparation method also is not limited to disclosed content among the embodiment.
Claims (8)
1. the ohmic contact of a gallium-nitride-based devices, form by titanium coating, aluminum metal layer, barrier metal layer and gold metal layer, wherein, with the gallium-nitride-based devices ohmic contact be titanium coating, covering aluminum metal layer on the titanium coating, on titanium coating and aluminum metal layer, cover barrier metal layer and gold metal layer successively, it is characterized in that, overlapping 2～10 cycles of arrangement of above-mentioned titanium coating and aluminum metal layer.
2. the ohmic contact of gallium-nitride-based devices as claimed in claim 1 is characterized in that, described titanium coating gross thickness is 20～50nm.
3. the ohmic contact of gallium-nitride-based devices as claimed in claim 1 or 2 is characterized in that, the thickness of described titanium coating and aluminum metal layer is than being 1:2～1:12.
4. the ohmic contact of gallium-nitride-based devices as claimed in claim 1 is characterized in that, described barrier metal layer adopts a kind of in nickel, platinum, molybdenum, titanium and the iridium.
5. the preparation method of the ohmic contact of a gallium-nitride-based devices, its step comprises:
1) at the surface of gallium-nitride-based devices difference deposit titanium coating as claimed in claim 1, aluminum metal layer, barrier metal layer and gold metal layer;
2) above-mentioned metal level is carried out rapid thermal annealing, form ohmic contact.
6. the preparation method of the ohmic contact of gallium-nitride-based devices as claimed in claim 5 is characterized in that, adopts magnetron sputtering or electron beam evaporation technique deposited metal in the step 1).
7. as the preparation method of the ohmic contact of claim 5 or 6 described gallium-nitride-based devices, it is characterized in that, after the step 1) that the gallium-nitride-based devices of deposited metal is ultrasonic in acetone, form ohm figure.
8. as the preparation method of the ohmic contact of claim 5 or 6 described gallium-nitride-based devices, it is characterized in that step 2) adopt the double annealing mode, promptly the temperature range of annealing is 800～900 ℃ for the first time, the time is 20～45 seconds; The temperature range of annealing is 400～600 ℃ for the second time, and the time is 60～180 seconds.
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Cited By (9)
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| CN102290478A (en) * | 2011-09-05 | 2011-12-21 | 中国电子科技集团公司第十八研究所 | p-i-n-type unijunction InGaN solar cell |
| CN103636001A (en) * | 2011-06-03 | 2014-03-12 | 雷声公司 | Gold-free ohmic contacts |
| CN104426054A (en) * | 2013-09-02 | 2015-03-18 | 长贝光电（武汉）有限公司 | Packaging method of semiconductor laser device |
| CN107799641A (en) * | 2016-09-05 | 2018-03-13 | 泰谷光电科技股份有限公司 | The electrode structure of light emitting diode |
| CN108376703A (en) * | 2018-01-11 | 2018-08-07 | 北京华碳科技有限责任公司 | A kind of Ohm contact production method suitable for AlGaN/GaN devices |
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| CN111129251A (en) * | 2019-12-30 | 2020-05-08 | 广东德力光电有限公司 | Electrode structure of high-weldability flip LED chip |
| US20210257526A1 (en) * | 2010-05-25 | 2021-08-19 | Micron Technology, Inc. | Ohmic contacts for semiconductor structures |
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| RU2756579C1 (en) * | 2020-12-16 | 2021-10-01 | Акционерное общество "Научно-производственное предприятие "Исток" имени А.И. Шокина" (АО "НПП "Исток" им. Шокина") | Method for manufacturing ohmic contacts of powerful electronic devices |
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| CN100394560C (en) * | 2004-08-09 | 2008-06-11 | 中国科学院微电子研究所 | Al/Ti/Al/Ti/Au ohmic contact system adapted to GaN device |
| CN100356594C (en) * | 2004-12-08 | 2007-12-19 | 深圳市方大国科光电技术有限公司 | Method for improving ohmic contact alloy of gallium nitrate based semiconductor LED |
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| US20210257526A1 (en) * | 2010-05-25 | 2021-08-19 | Micron Technology, Inc. | Ohmic contacts for semiconductor structures |
| CN103636001A (en) * | 2011-06-03 | 2014-03-12 | 雷声公司 | Gold-free ohmic contacts |
| CN103636001B (en) * | 2011-06-03 | 2016-08-17 | 雷声公司 | Gold-free ohmic contacts |
| CN102290478A (en) * | 2011-09-05 | 2011-12-21 | 中国电子科技集团公司第十八研究所 | p-i-n-type unijunction InGaN solar cell |
| CN102290478B (en) * | 2011-09-05 | 2016-03-09 | 中国电子科技集团公司第十八研究所 | A kind of p-i-n type unijunction InGaN solar cell |
| CN104426054A (en) * | 2013-09-02 | 2015-03-18 | 长贝光电（武汉）有限公司 | Packaging method of semiconductor laser device |
| CN107799641A (en) * | 2016-09-05 | 2018-03-13 | 泰谷光电科技股份有限公司 | The electrode structure of light emitting diode |
| CN108376703A (en) * | 2018-01-11 | 2018-08-07 | 北京华碳科技有限责任公司 | A kind of Ohm contact production method suitable for AlGaN/GaN devices |
| CN108389954A (en) * | 2018-01-11 | 2018-08-10 | 河源市众拓光电科技有限公司 | A kind of superstructure LED chip and preparation method thereof |
| CN108389954B (en) * | 2018-01-11 | 2019-11-22 | 河源市众拓光电科技有限公司 | A kind of superstructure LED chip and preparation method thereof |
| CN111129251A (en) * | 2019-12-30 | 2020-05-08 | 广东德力光电有限公司 | Electrode structure of high-weldability flip LED chip |
| CN111029457A (en) * | 2019-12-31 | 2020-04-17 | 合肥彩虹蓝光科技有限公司 | Packaging structure and packaging method of deep ultraviolet light emitting diode |
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