CN104426054A - Packaging method of semiconductor laser device - Google Patents
Packaging method of semiconductor laser device Download PDFInfo
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- CN104426054A CN104426054A CN201310392919.5A CN201310392919A CN104426054A CN 104426054 A CN104426054 A CN 104426054A CN 201310392919 A CN201310392919 A CN 201310392919A CN 104426054 A CN104426054 A CN 104426054A
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- semiconductor laser
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- laser device
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Abstract
The invention relates to a packaging method of a semiconductor laser device. The packaging method comprises the following steps: carrying out primary diffusion treatment on a chip of the semiconductor laser device in a manufacturing process of the chip of the semiconductor laser device; then carrying out heating treatment on the chip of the semiconductor laser device for 8-60 hours at a temperature ranging from 180 DEG C to 260 DEG C; carrying out secondary sufficient diffusion on an inner structure of the chip. The packaging method of the semiconductor laser device has the beneficial effects that the problem that ohmic contact of a metal electrode P/N face on the chip and a semiconductor material of the chip is poor is solved; the forward voltage of the emitting semiconductor laser device is reduced, so that the scrap rate and the reject ratio of the product are reduced; the effective utilization rate of the product is greatly improved and the cost is reduced.
Description
Technical field
The present invention relates to semiconductor laser field, be specifically related to a kind of method for packing of semiconductor laser.
Background technology
The advantages such as semiconductor laser has that volume is little, lightweight, electro-optical efficiency is high, stable performance, reliability are high and the life-span is long, the fields such as communication, computer, video display, manufacturing industry, space flight and aviation, medical treatment can be widely used in, become the most promising field of photovoltaic industry.It is the key understanding and mastering laser characteristic that the performance parameter of noise spectra of semiconductor lasers carries out testing and characterizing; Also be the important evidence judging laser quality simultaneously.
The performance parameter of noise spectra of semiconductor lasers test importantly comprises LIV(power-current-voltage), wavelength, spectrum etc., wherein LIV test is the basic test project of semiconductor laser.
Its general principle of instrument of testing for semiconductor laser LIV is at present all adopt accurate source, binary channels source measuring unit, integrating sphere detector; The current drives source of LD is monitored the light that forward conduction voltage drop V and operating current I, LD eject simultaneously and is changed into photoelectric current through integrating sphere detector, thus obtains the luminous power of actual correspondence by coefficient conversion.
By applying outer drive current to LD, surveying its forward voltage, can find that its forward voltage values Vf is usually bigger than normal.Analyze LD TO, underlying cause can determine the numerical value of Vf:
A, LD chip and heat sink between there is resistance;
The resistance that b, bonding wire between chip electrode and base pin produce;
C, chip metal electrode P face, N face and chip semiconductor material ohmic contact are bad;
The series resistance of the circuit of d, test macro.
In above-mentioned 4 kinds of situations, control well after production and testing equipment and technological parameter, often the third situation is the main factor affecting Vf.
Summary of the invention
The object of this invention is to provide a kind of method for packing of semiconductor laser, solve the problem that metal electrode P/N face and chip semiconductor material ohmic contact on chip are bad.
The technical scheme that the present invention solves the problems of the technologies described above is as follows: a kind of method for packing of semiconductor laser, comprise the following steps, in the manufacturing process of the chip of semiconductor laser, the chip of noise spectra of semiconductor lasers carries out One Diffusion Process process, then the chip of semiconductor laser is carried out at temperature 180 DEG C to 260 DEG C the heat treated of 8 to 60 hours, allow chip internal structure carry out secondary and fully spread.
Further, the temperature of described heat treated is 200 DEG C, and the time is 8 hours.
Further, described heat treated is after described chip installation, by semiconductor laser, bar, chip and coaxial TO-Can semi-finished product/finished product is integrally carried out heat treated.
The invention has the beneficial effects as follows: the method for packing that the invention provides a kind of semiconductor laser, solve the problem that metal electrode P/N face and chip semiconductor material ohmic contact on chip are bad, reduce the forward voltage of emitting laser, the scrappage of product, fraction defective are reduced, product effective rate of utilization is significantly improved, reduces costs.
Embodiment
Be described principle of the present invention and feature below in conjunction with accompanying drawing, example, only for explaining the present invention, is not intended to limit scope of the present invention.
A kind of method for packing of semiconductor laser, comprise the following steps, in the manufacturing process of the chip of semiconductor laser, the chip of noise spectra of semiconductor lasers carries out One Diffusion Process process, then chip is carried out at temperature 180 DEG C to 260 DEG C the heat treated of 8 to 60 hours, allow chip internal structure carry out secondary fully spread, improve the problem that chip metal electrode P face, N face and chip semiconductor material ohmic contact are bad.
Preferably, described heat treated is after described chip installation, by semiconductor laser, bar, chip and coaxial TO-Can semi-finished product/finished product is integrally carried out heat treated.The temperature of described heat treated is 200 DEG C, and the time is 8 hours.
To the method for packing experiment Analysis of a kind of semiconductor laser of the present invention, in experiment, heat treated secondary diffusion experiment is carried out to 150 bad finished products of 1550nm FP TO-Can, toast 8 hours at 200 DEG C of temperature, the forward voltage values of product has 95% to return to normal value state; Continue to do high-temperature baking experiment to all the other defective productss, its forward voltage values also all returns to normal range (NR).
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, within the spirit and principles in the present invention all, any amendment done, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (3)
1. the method for packing of a semiconductor laser, it is characterized in that, comprise the following steps, in the manufacturing process of the chip of semiconductor laser, the chip of noise spectra of semiconductor lasers carries out One Diffusion Process process, then the chip of semiconductor laser is carried out at temperature 180 DEG C to 260 DEG C the heat treated of 8 to 60 hours, allow chip internal structure carry out secondary and fully spread.
2. the method for packing of a kind of semiconductor laser according to claim 1, is characterized in that, the temperature of described heat treated is 200 DEG C, and the time is 8 hours.
3. the method for packing of a kind of semiconductor laser according to claim 1 and 2, it is characterized in that, described heat treated is after described chip installation, by semiconductor laser, bar, chip and coaxial TO-Can semi-finished product/finished product is integrally carried out heat treated.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310392919.5A CN104426054A (en) | 2013-09-02 | 2013-09-02 | Packaging method of semiconductor laser device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310392919.5A CN104426054A (en) | 2013-09-02 | 2013-09-02 | Packaging method of semiconductor laser device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104426054A true CN104426054A (en) | 2015-03-18 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310392919.5A Pending CN104426054A (en) | 2013-09-02 | 2013-09-02 | Packaging method of semiconductor laser device |
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| CN (1) | CN104426054A (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101369599A (en) * | 2008-07-11 | 2009-02-18 | 北京大学 | Ohm contact of gallium nitride base device and preparation method thereof |
| CN102324390A (en) * | 2011-10-21 | 2012-01-18 | 四川太晶微电子有限公司 | Rectifier diode core manufacturing method |
-
2013
- 2013-09-02 CN CN201310392919.5A patent/CN104426054A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101369599A (en) * | 2008-07-11 | 2009-02-18 | 北京大学 | Ohm contact of gallium nitride base device and preparation method thereof |
| CN102324390A (en) * | 2011-10-21 | 2012-01-18 | 四川太晶微电子有限公司 | Rectifier diode core manufacturing method |
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| AD01 | Patent right deemed abandoned | ||
| AD01 | Patent right deemed abandoned |
Effective date of abandoning: 20180504 |