CN101359139B - Liquid crystal display panel and manufacturing method thereof - Google Patents
Liquid crystal display panel and manufacturing method thereof Download PDFInfo
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- CN101359139B CN101359139B CN2008101312503A CN200810131250A CN101359139B CN 101359139 B CN101359139 B CN 101359139B CN 2008101312503 A CN2008101312503 A CN 2008101312503A CN 200810131250 A CN200810131250 A CN 200810131250A CN 101359139 B CN101359139 B CN 101359139B
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
- G02F1/134372—Electrodes characterised by their geometrical arrangement for fringe field switching [FFS] where the common electrode is not patterned
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
- G02F1/136295—Materials; Compositions; Manufacture processes
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Liquid Crystal (AREA)
- Geometry (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
The invention provides a FFS mode liquid crystal display panel having a lower electrode and an upper electrode on the panel film, improving reliability of the mounting terminal portion. The liquid crystal display panel is characterized in that the mounting terminal portion(33A) comprises a gate insulator 14 and a passivation film 17 covering a surface of a wiring 34 for a mounting terminal, a contact hole 36a penetrating therethrough, a first transparent conductive film 38 electrically connected to the wiring 34 for a mounting terminal, an insulation film 23 formed with an opening 36b having a smaller diameter than the diameter of the contact hole 36a in a central part of the first transparent conductive film 38, and a mounting terminal formed of a second transparent conductive film 41 electrically connected to the first transparent conductive film 38. The first transparent conductive film 38 and the second transparent conductive film 41 have the same materials with the lower electrode and the upper electrode of the FFS mode liquid crystal display panel; the insulation film 23 has the same materials with the insulation film arranged between the lower electrode and the upper electrode.
Description
Technical area
The present invention relates to a kind of display panels and manufacture method thereof.This display panels is can not take place because of the problems such as circuit impedance increase that break or corrosion causes when in its mounting terminal portion various parts being installed, and disposes FFS (Fringe Field Switching) the type display panels of pixel electrode (pixel electrode) and current electrode (common electrode) on planar film.
Background technology
Display panels adopts mostly, has a pair of transparency carrier that is formed with electrode etc. from the teeth outwards and by the liquid crystal layer of this a pair of substrate clamping, make liquid crystal carry out permutatation by the electrode application voltage on two substrates, and then show the longitudinal electric field mode of various information.In the display panels of this type of longitudinal electric field mode, TN (TwistedNematic) type more commonly.But,, also researched and developed various longitudinal electric field mode display panels such as VA (VerticalAlignment) type or MVA (Multi-domain Vertical Alignment) type through improvement because there is the narrow problem in visual angle in it.
On the other hand, also have different with above-mentioned longitudinal electric field mode display panels, only on a side group plate, possess the pair of electrodes that constitutes by pixel electrode and current electrode, be also referred to as IPS (In-Plane Switching) type or the FFS type display panels of transverse electric field mode display panels.
Wherein, IPS type display panels is that pair of electrodes is configured in same one deck, and the direction of an electric field that puts on liquid crystal is controlled to roughly parallel with substrate direction, makes liquid crystal molecule at the enterprising rearrangement row of the direction parallel with substrate.Therefore, this IPS type display panels is compared with above-mentioned longitudinal electric field mode display panels, has the advantage of the non-constant width in visual angle.But IPS type display panels so can't fully drive the liquid crystal molecule that is positioned at the pixel electrode upside, has the problem of the decline that causes transmittance etc. in order to apply electric field and pair of electrodes to be arranged on same one deck to liquid crystal.
In order to solve this type of problem of IPS type display panels, researched and developed FFS type display panels (with reference to following patent documentation 1 and 2).In this FFS type display panels, will be used for applying the pixel electrode and the current electrode of electric field, be configured in different layers respectively across dielectric film to liquid crystal.Being characterized as of this FFS type display panels compared with IPS type display panels, and the visual angle is wideer and contrast is higher, and can also have high transmission rate in the time of low voltage drive, so can realize the display effect that becomes clear.And because FFS type display panels is compared with IPS type display panels, the overlapping area when overlooking between pixel electrode and the current electrode is bigger, therefore can produce bigger maintenance capacity thereupon, has the advantage that need not to be provided with separately auxiliary capacity line.
At this,, the formation of the mounting terminal portion that is formed at available liquid crystal display panel edge part is described with reference to Fig. 8.
Fig. 8 (A) is the sectional view of the mounting terminal portion of the low level distribution (lower wiring) of the existing goods example of expression, and Fig. 8 (B) is the sectional view of the mounting terminal portion of the high-order distribution (upperwiring) of the existing goods example of expression.
The making of mounting terminal portion is that the sweep trace in array (array) substrate with display panels or the making of signal wire are carried out simultaneously.Therefore, mounting terminal portion comprises, shown in Fig. 8 (A), be connected in the low level distribution 52 made simultaneously with the making of sweep trace and grid on the transparency carrier 51, and shown in Fig. 8 (B), be connected in two kinds of the high-order distribution 54 that forms simultaneously with signal wire on the gate insulating film 53 that covers transparency carrier 51 surfaces.The surface of this high position distribution 54 and gate insulating film 53 is passivated film (being also referred to as the protection dielectric film) 55 and covers.
And shown in Fig. 8 (A), the mounting terminal 56 of low level distribution 52 usefulness by forming the contact hole 57 that runs through passivating film 55 and gate insulating film 53 simultaneously, when pixel electrode forms, is formed by transparent conductive material.Equally, shown in Fig. 8 (B), the mounting terminal 58 of high-order distribution 54 usefulness by forming the contact hole 59 that runs through passivating film 55, when pixel electrode forms, is formed by transparent conductive material.Therefore, low level distribution 52 and high-order distribution 54 once were exposed in the etching environment using photolithography to form contact hole 57 and at 59 o'clock.Low level distribution 52 usefulness mounting terminal 56 and the high-order distribution 54 usefulness mounting terminal 58 that form like this, be configured to respectively than on the higher position of low level distribution 52 and high-order distribution 54, and wideer than low level distribution 52 and high-order distribution 54, thus make with various links that these mounting terminal 56 and 58 are connected between electrically contact good.
Patent documentation 1 TOHKEMY 2001-235763 communique
Patent documentation 2 TOHKEMY 2002-182230 communiques
But, because existing FFS type display panels, in TFT on-off element and the overlapping pixel electrode surface sections of being formed with poor (step) of general distribution (common line) such as (thin film transistor (TFT)s), so on the part of this section difference, the orientation of liquid crystal molecule takes place chaotic.Therefore, in the existing FFS type display panels, in fact described segment difference section is divided becomes the zone that does not contribute to demonstration, thus in colored filter substrate by black matrix shading, caused decline with the corresponding aperture of this section difference ratio.
In order to eliminate this section difference, can consider to use employed planar film in the display panels of above-mentioned VA mode or MVA mode (planar film), the scheme of configuration pixel electrode and current electrode on this planar film.But, FFS type display panels is adopted the words of this class formation, be configured on the different layers across dielectric film respectively at pixel electrode on the planar film and current electrode, so when forming mounting terminal portion on edge part, formed dielectric film will have more one deck on the surface of low level distribution or high-order distribution.At this moment, when using photolithography to form the contact hole of pixel portions, the operation of contact hole that is formed for exposing the low level distribution of installation portion or high-order distribution is as follows.Promptly; form locational gate insulating film (nitride film) and the last peristome that forms of diaphragm (nitride film) at the contact hole that is laminated to mounting terminal portion; and on the planar film on the part that is laminated to except that mounting terminal portion; formed after the current electrode; insulating film layer is pressed on all faces; and the contact hole in mounting terminal portion forms on the position, forms peristome once more and makes it be through to the current potential distribution.And, on pixel portions, form in the pixel electrode, form electrode with the current electrode same material at the contact hole place of mounting terminal portion.But, during adopting said method, low level distribution or high-order distribution are exposed in the etching environment twice.
Because low level distribution and high-order distribution are to have satisfactory electrical conductivity and corrosion-prone metal is constituted by aluminium, aluminium alloy etc., therefore if be exposed in the etching environment of dielectric film twice, then can cause damage to strengthen, may take place during installation because of the problems such as wiring resistance increase that break or corrosion causes.
Therefore; taked following technology: when carrying out the contact hole opening of pixel electrode; on the gate insulating film (nitride film) of the contact hole allocation position of mounting terminal portion and diaphragm (nitride film), opening is not set; after the dielectric film between pixel electrode and current electrode is formed; carry out whole etching by contact hole, thereby make each electrode distribution not be exposed to etching environment mounting terminal portion.But; there are the following problems in this technology: because gate insulating film, diaphragm are membranous different with dielectric film; so rate of etch difference; dielectric film can become back taper; thereby it is poor to produce section between each nitride film; when using electrode covering contact site, can disconnect (step disconnection), thereby become contactless state.
Summary of the invention
The present invention carries out for a part that addresses the above problem at least, and it can be realized with following form or application examples.
[application examples 1] should use-case display panels be, have edge part and be formed with the display panels of the array base palte of mounting terminal portion in the viewing area, it is characterized in that described viewing area comprises: a plurality of sweep traces and signal wire, it forms rectangular respectively; Bottom electrode and top electrode with a plurality of grooves (slit), it is formed on the planar film, practise physiognomy across dielectric film and to be configured in each over the ground by described sweep trace and described signal wire institute area surrounded, and constitute by transparent conductive material respectively, described mounting terminal portion comprises: the 1st dielectric film, and it covers the surface of mounting terminal with distribution; Contact hole, it is formed and runs through described mounting terminal with described the 1st dielectric film on the distribution; The 1st conducting film, it covers the part of described contact hole bottom at least, and electrically connects with distribution with described mounting terminal; The 2nd dielectric film, it is set at described the 1st dielectric film surface, and has when overlooking at least and the local overlapping opening of described contact hole; The 2nd conducting film, it covers the surface of described the 2nd dielectric film around the described contact hole, and described the 1st conducting film and described the 2nd conducting film form at above-mentioned opening part and electrically connect.
According to said structure, then the viewing area possesses: a plurality of sweep traces and signal wire, and it is formed rectangular separately; Bottom electrode and top electrode with a plurality of grooves, it is formed on the planar film, and practising physiognomy across dielectric film is configured in each over the ground by described sweep trace and described signal wire institute area surrounded, and is made of transparent conductive material respectively.By described formation, display panels can be driven as FFS type display panels.
And, in display panels, owing to relatively disposed by direction by dielectric film, be formed on the planar film by transparent conductive material bottom electrode that constitutes and top electrode respectively with a plurality of grooves, so, on bottom electrode and top electrode, it is poor can not produce the section that causes because of on-off element and general distribution etc.Therefore, by display panels, the interval between opposite side substrate and the top electrode, promptly grid gap (Cell gap) is impartial, and, owing in the viewing area, need carry out the area minimizing in the zone of shading with black matrix, so the aperture is than becoming big.So, can realize the demonstration that becomes clear can obtaining the FFS type display panels that shows that image quality is good by display panels.In FFS type display panels, any one of top electrode and bottom electrode can both play a role as pixel electrode or current electrode.That is, in top electrode and the bottom electrode, a side who is connected in on-off element becomes pixel electrode, and a side who is connected in general distribution then becomes current electrode.
And in display panels, the mounting terminal of mounting terminal portion is covered by the 1st conducting film with the surface of distribution.Therefore, when using photolithography to form opening near the central portion of the 2nd dielectric film, mounting terminal can not be exposed with the surface of distribution, thereby mounting terminal can tail off with the damage of distribution.Therefore, by this display panels, when the parts of mounting terminal portion installation provision, can not produce the problem of the wiring resistance increase that causes because of broken string or corrosion etc., thereby can obtain the higher FFS type display panels of installation portion reliability.
In the display panels of above-mentioned application examples, described the 2nd dielectric film is preferably [application examples 2], covers the inner peripheral surface and the edge part surface of described contact hole, and near the central portion of described contact hole, has the opening of its diameter less than described contact hole diameter.
According to this structure, the 2nd dielectric film is formed into the interior week of contact hole.Therefore, even the 2nd dielectric film is etched wall to contact hole by etching sharp in etching environment, because the area on the surface that the 2nd dielectric film is covered is wider, so also can not be etched the contact hole edge part of the installation portion that becomes mounting terminal portion, thereby can keep the height of installation portion.Thus, be difficult for taking place the inequality of height in each mounting terminal portion, can suppress the generation of noncontact part.
[application examples 3] in the display panels of above-mentioned application examples, described the 2nd dielectric film is preferably formed in the edge part of described contact hole.
According to this structure, the 2nd dielectric film can not be formed into the bottom (bottom) of contact hole, but is set at the edge part of contact hole, and therefore, it is wide that the contact area between the 1st conducting film and the 2nd conducting film becomes.Thus, each mounting terminal portion becomes low resistanceization, and stable voltage can be provided.
In the display panels of above-mentioned application examples, described the 1st conducting film preferably electrically connects with distribution with mounting terminal [application examples 4], and forms the bottom (bottom) that covers described contact hole.
According to this structure, the 1st conducting film is formed the bottom (bottom: mounting terminal is used the surface of distribution) that covers contact hole, therefore mounting terminal can be exposed in the etching environment with distribution.So, can more effectively protect the mounting terminal distribution.
In the display panels of above-mentioned application examples, described the 1st conducting film is preferably [application examples 5], electrically connects with distribution with described actual installation terminal, and is formed on the subregion of described mounting terminal with the distribution surface.
According to this structure; when the 1st conducting film and mounting terminal electrically connect with distribution; be formed on the subregion of described mounting terminal with the distribution surface; so; form in the zone at this; even because etching environment, make and expose face and be subjected to a certain degree destruction, also can protect the mounting terminal distribution.
[application examples 6] is in the display panels of above-mentioned application examples, described the 1st conducting film and described the 2nd conducting film are preferably, adopt identical material with described bottom electrode and described top electrode respectively, described the 2nd dielectric film adopts identical material with the described dielectric film that is disposed between described bottom electrode and the described top electrode.
According to this structure, owing to can when forming the viewing area, form mounting terminal portion, so can under the situation that does not increase operation, form viewing area and mounting terminal portion.Wherein, so-called " identical material " except comprising separately situation about forming with identical materials, means that also the opposing party also possessed same multi-ply construction when for example a side was multi-ply construction.
In addition, as bottom electrode and top electrode, can use ITO (Indium Tin Oxide) or IZO transparent conductive materials such as (Indium Zinc Oxide).At this moment, bottom electrode and top electrode can be same components, also can be different components.In addition,, just can use, for example can use transparent resins such as third rare resin, polyimide resin so long as the surface has the transparent organic insulation film of flatness at least as planar film.And, can use inorganic insulating membranes such as monox, silicon nitride as various dielectric films.
[application examples 7] is in the display panels of above-mentioned application examples, described mounting terminal is preferably with distribution, by being formed with the described sweep trace of described viewing area metal material with material, described the 1st dielectric film is preferably by multicoat membrane and forms, and the gate insulating film on this multicoat membrane and the described sweep trace that covers described viewing area and the passivating film that covers on the described signal wire adopt identical material.
According to this structure, the sweep trace of viewing area is formed directly on the transparency carrier as the low level distribution usually, so the mounting terminal that forms simultaneously with this sweep trace is covered by gate insulating film and passivating film with the distribution surface, therefore, this gate insulating film and passivating film these two become the 1st dielectric film.According to the display panels of this form,, also can obtain to have the display panels of foregoing invention effect even the mounting terminal distribution is the low level distribution that is formed directly on the substrate.Yet, though in above-mentioned structure, with gate insulating film and passivating film as the 1st dielectric film,, no matter be formed at mounting terminal is one deck or two-layer with the dielectric film on the distribution, all is equivalent to the 1st dielectric film.
[application examples 8] is in the display panels of above-mentioned application examples, described mounting terminal is preferably with distribution, form by the metal material identical with the described signal wire of described viewing area, described the 1st dielectric film is preferably, by with the described signal wire that covers described viewing area on the film of the identical material of passivating film form.
According to this structure, the signal wire of viewing area is formed on the gate insulating film surface as high-order distribution usually, covers so the mounting terminal that is formed simultaneously with this signal wire is passivated film with the surface of distribution, and therefore, this passivating film becomes the 1st dielectric film.According to the display panels of described form,, also can obtain having the display panels of foregoing invention effect even be under the situation of the lip-deep high-order distribution of gate insulating film at the mounting terminal distribution.
[application examples 9] can adopt between the described planar film and described bottom electrode of described viewing area in the display panels of above-mentioned application examples, and part is formed with the structure of reflecting plate.
According to the display panels of this form, between planar film and bottom electrode, partly formed the position of reflecting plate, play a role as reflecting part, and remainder plays a role as the transmittance section, therefore, can obtain the semi-transparent type display panels of FFS type.
[application examples 10] liquid crystal display panel preparation method in should use-case is, a kind of manufacture method with display panels of viewing area and mounting terminal portion, and described viewing area comprises: a plurality of sweep traces and signal wire, it forms rectangular respectively; The viewing area comprises bottom electrode and the top electrode with a plurality of grooves (slit), and it is formed on the planar film, relatively is configured in each by described sweep trace and described signal wire area surrounded across dielectric film, and is made of transparent conductive material respectively; And, described actual installation portion of terminal, be formed on described viewing area around.This liquid crystal display panel preparation method is characterised in that, described mounting terminal portion makes by the operation of following (1)～(7).(1) mounting terminal at substrate surface forms on the position, forms the operation of using distribution with the mounting terminal with compulsory figure of described sweep trace or the identical material of described signal wire; (2) cover the operation of described mounting terminal with the 1st dielectric film with distribution; (3) formation runs through the operation of described mounting terminal with the contact hole of described the 1st dielectric film on the distribution; (4) covering the part of described contact hole bottom (bottom) at least, and can with described mounting terminal with the electrical ways of connecting of distribution, form operation with the 1st conducting film of the identical material of described bottom electrode; (5), form and be disposed at the operation of the 2nd dielectric film of the described bottom electrode of described viewing area and the dielectric film same composition between institute's top electrode on the surface of described the 1st dielectric film; (6) on described the 2nd dielectric film, be formed on when overlooking at least operation with the local overlapping opening of contact hole; (7) form the operation of mounting terminal, this mounting terminal is by covering described the 2nd dielectric film surface around the described contact hole and being electrically connected at described opening part and described the 1st conducting film, and employing constitutes with the 2nd conducting film of the identical material of described top electrode.
Manufacture method according to the display panels of this form can produce the display panels that is easy to reach the foregoing invention effect.
Description of drawings
Fig. 1 is during for the colored filter substrate of FFS type display panels of perspective embodiment 1, the pattern vertical view of 1 pixel of array base palte.
Fig. 2 is the cut-open view along II-II line among Fig. 1.
Fig. 3 is the pattern cut-open view of portion of terminal of the display panels low level distribution of embodiment 1.
Fig. 4 is the pattern cut-open view of the portion of terminal of the high-order distribution of the display panels of embodiment 1.
Fig. 5 is during for the colored filter substrate of the semi-transparent type display panels of FFS type of perspective embodiment 2, the pattern vertical view of 1 pixel of array base palte.
Fig. 6 is the cut-open view along the VI-VI line among Fig. 5.
Fig. 7 is the pattern cut-open view of portion of terminal Change Example.
Fig. 8 (A) is the synoptic diagram of the low level distribution mounting terminal portion section of prior art, and Fig. 8 (B) is the synoptic diagram of the high-order distribution mounting terminal portion section of prior art.
[symbol description]
10A, 10B: display panels 11: transparency carrier
12: sweep trace 13: general distribution 14: gate insulating film
15: semiconductor layer 16: signal wire 17: passivating film
18: planar film 19: reflecting plate 20: reflecting part
21,24: contact hole 22: bottom electrode 23: dielectric film
25: groove 26: 27: the 2 transparency carriers of top electrode
28: black matrix 29: chromatic filter layer 30: protective seam
31: liquid crystal 33A: low level distribution mounting terminal portion
33B: high-order distribution is with mounting terminal portion 34,35: the mounting terminal distribution
36a, 37a: contact hole 36b, 37b: opening
38,39: the 1 nesa coatings 41,42: the 2 nesa coatings
Embodiment
Below, with reference to accompanying drawing, be that example describes most preferred embodiment of the present invention with various embodiment.Among the embodiment below; as the display panels that technological thought of the present invention specialized; illustration FFS type display panels; but and do not mean that the present invention only specific to this FFS type display panels, equally also be adapted to all and be contained in other embodiment in the protection domain that claim asks.
Fig. 1 is when having had an X-rayed the colored filter substrate of FFS type display panels 10A of embodiment 1,1 pixel of array base palte overlook mode chart.Fig. 2 is the cut-open view along the II-II line among Fig. 1.Fig. 3 is the pattern cut-open view of portion of terminal of the display panels low level distribution of embodiment 1.Fig. 4 is the pattern cut-open view of the portion of terminal of the high-order distribution of the display panels of embodiment 1.Fig. 5 is when having had an X-rayed the colored filter substrate of the semi-transparent type display panels of FFS type of embodiment 2,1 pixel of array base palte overlook mode chart.Fig. 6 is the cut-open view along the VI-VI line among Fig. 5.
Embodiment 1
As the FFS type display panels of embodiment 1, be example with FFS type display panels 10A with planar film, according to the order of its manufacturing process, use Fig. 1～Fig. 4 to be described.When making the array substrate AR of this display panels 10A, whole on surface at first as transparency carriers such as glass substrate 11, form conductive layer by for example aluminum or aluminum alloy constituted.Thereafter, use known photograph flat band method and etching method, on the viewing area, form a plurality of sweep traces 12 and a plurality of general distribution 13 in parallel to each other, simultaneously, low level distribution at the viewing area edge part is located with mounting terminal portion 33A (with reference to Fig. 3), forms the mounting terminal distribution 34 that is made of gate line.This gate line is also nonessential as the use of sweep trace 12 usefulness distributions, but because of being the distribution of identical material with sweep trace 12, so be called as " gate line ", though omitted diagram, it can be used as various suitable distributions and uses.In addition,, also its sweep trace 12 1 sides along adjacent pixels can be formed, perhaps it can be formed between two sweep traces 12 though exemplified the example that general distribution 13 forms for the sweep trace 12 along this pixel at this.
Then, the whole gate insulating film 14 that constitutes by silicon nitride layer or silicon oxide layer that covers on this surface.Thereafter, by CVD (chemical vapor deposition) method, for example amorphous silicon (hereinafter referred to as " a-Si ") layer is covered in the surface integral body of gate insulating film 14.Afterwards, similarly,, form on the zone, form the semiconductor layer 15 that constitutes by the a-Si layer at TFT by photograph flat band method and etching method.This is formed with the zone of sweep trace 12 of the position of semiconductor layer 15, forms the grid G of TFT.
Then, on the surface of gate insulating film 14 and semiconductor layer 15, form the conductive layer that for example constitutes by aluminum or aluminum alloy.And, to this conductive layer, by photograph flat band method and etching method, with the form of in the viewing area, intersecting with sweep trace 12, formation contains the signal wire 16 of source S, and form at TFT and form drain D on the zone, and, locate with mounting terminal portion 33B (with reference to Fig. 4) at high-order distribution, form the mounting terminal distribution 35 that constitutes by source electrode line.This source electrode line is identical with the situation of gate line, and nonessential distribution as signal wire 16 is used, and because of being the distribution of identical material with signal wire 16, so be called as " source electrode line ", though omitted diagram, it can be used as various suitable distributions and is used.
Thereafter, the surface of the transparency carrier 11 that obtains in above-mentioned operation is whole, covers passivating film 17.As this passivating film 17, can use the film that constitutes by silicon nitride or monox, but consider from the angle of insulativity, be preferably silicon nitride layer.Wherein, be present in mounting terminal distribution 34 lip-deep gate insulating film 14 and the passivating films 17 of low level distribution, corresponding to the 1st dielectric film of invention with the mounting terminal 33A of portion.Similarly, being present in high-order distribution uses distribution 35 lip-deep passivating films 17 also corresponding to the 1st dielectric film with the mounting terminal of the mounting terminal 33B of portion.
Then, by photograph flat band method and etching method,, form contact hole 21 and 36a respectively on the general distribution 13 and on the gate insulating film 14 and passivating film 17 of mounting terminal with the surface on the distribution 34 of low level distribution with actual installation portion of terminal 33A.Meanwhile, on the passivating film 17 on the mounting terminal usefulness distribution 35 of the high-order distribution usefulness mounting terminal 33B of portion, form contact hole 37a.The formation of this contact hole 21,36a and 37a can be adopted the plasma etching method of one of dry-etching method or the wet etching of buffered hydrofluoric acid.Thus, general distribution 13, mounting terminal are exposed with the surface of distribution 34 and 35.Also do not form contact hole this moment on the passivating film on the drain D 17.And, passivating film 17 in the viewing area is lip-deep, the predetermined formation outside the part of contact hole of removing on contact hole 21 parts and the drain D located, by the photograph flat band method, and the planar film that lamination for example is made of acrylic resin or polyimide resin (being also referred to as the interlayer film) 18.
Then, whole on the surface of the transparency carrier 11 that is formed with planar film 18, cover transparency conducting layer as ITO or IZO formation.Thereafter, by photograph flat band method and etching method, when on the surface of planar film 18, forming bottom electrode 22, cover mounting terminal, form the 1st nesa coating 38 and 39 respectively with the surface of distribution 34,35 and the form of passivating film on every side 17 thereof with separately each pixel.At this moment, the bottom electrode 22 of each each pixel electrically connects with general distribution 13 by contact hole 21.
Then, whole on the surface of the transparent substrate 11 that has formed bottom electrode the 22, the 1st nesa coating 38 and 39, form the dielectric film 23 that constitutes by silicon nitride layer or silicon oxide layer.At this moment, the predetermined surface that forms the passivating film 17 of part of the contact hole on the drain D, the 1st nesa coating 38 and 39 surface also are insulated film 23 and cover.Then, by photograph flat band method and etching method,, form contact hole 24 to predetermined passivating film 17 and the dielectric film 23 that forms part of the contact hole on the drain D; To being positioned at the 1st nesa coating 38 and 39 lip-deep dielectric films 23, form opening 36b and 37b respectively.To the formation of this contact hole 24, opening 36b and 37b, can adopt the plasma etching method of one of dry-etching method or the wet etching of application buffered hydrofluoric acid.In addition, in Fig. 1,, be more readily understood, omitted its diagram in order to make display panels 10A though dielectric film 23 should come across on whole faces except that the part of the top electrode 26 that hereinafter describes in detail.
Therefore, though drain D is exposed to etching environment for the first time at this, but owing to have the 1st nesa coating 38 and 39 in mounting terminal with the surface of distribution 34 and 35, when formation opening 36b and 37b, mounting terminal can directly not be exposed in the etching environment with distribution 34 and 35.Therefore, when opening 36b and 37b formation, mounting terminal can not sustain damage or corrode once more with distribution 34 and 35.
And, the diameter of this opening 36b and 37b less than, be formed on mounting terminal with the diameter of the contact hole 36a on gate insulating film on the distribution 34 14 and the passivating film 17 and be formed on the diameter of mounting terminal with the contact hole 37a on the passivating film 17 on the distribution 35.Therefore, the dielectric film 23 on the 1st nesa coating 38 and 39, at the edge side of opening 36b and 37b, part covers the 1st nesa coating 38 and 39.By adopting this structure, make dielectric film 23 be formed into the interior week of contact hole 36a, 37a, so, even for example dielectric film 23 is subjected to fierce etching in etching environment, be etched to the wall of contact hole 36a, 37a,, thereby also can be etched the installation portion that becomes each 33A of mounting terminal portion, 33B because the area on the surface that covered of dielectric film 23 is wide, the edge part of contact hole 36a, 37a, thus the height of installation portion can be kept.Therefore,, be difficult for difference in height takes place, can suppress the generation of noncontact part at each 33A of mounting terminal portion, 33B place.In addition, in this dielectric film 23, be present in mounting terminal with formed part on the surface of the 1st nesa coating 38 on the distribution 34 and 35 and 39, corresponding to the 2nd dielectric film.
And, whole on the surface of the transparency carrier 11 that has formed dielectric film 23, cover the transparency conducting layer that for example constitutes by ITO or IZO.Thereafter, by photograph flat band method and etching method, form on the surface of dielectric film 23, be formed with the top electrode 26 of a plurality of grooves 25 with separately each pixel in, to cover the form of the surperficial of the 1st nesa coating 38,39 and dielectric film 23 on every side thereof, form the 2nd nesa coating 41 and 42 respectively.The 2nd nesa coating 41 and 42, by being formed on opening 36b and the 37b on the dielectric film 23, the surface with the 1st nesa coating 38 and 39 contacts respectively, and separately corresponding to mounting terminal.Thereafter, whole by surface at the top electrode 26 that comprises display part, alignment films (not shown) is set, thereby finishes the array substrate AR of the display panels 10A of embodiment 1.
Though adopted in the present embodiment with the bottom electrode is current electrode, the very structure of pixel electrode powers on, be connected with drain D as pixel electrode with bottom electrode but also for example can adopt, be current electrode with the top electrode be configured in the pixel or the viewing area periphery on the structure that electrically connects of general distribution 13.
In addition, for the conductive material that is configured in the mounting terminal portion outside the viewing area, the 1st nesa coating 38 and the 39 and the 2nd nesa coating 41 and 42, not only the transparency electrode by ITO or IZO etc. forms, and can also be formed by for example conductive light shielding film such as aluminium, molybdenum, titanium, chromium.
For colored filter substrate CF, as shown in Figure 2, on the surface of the 2nd transparency carrier 27,, form black matrix 28 with the sweep trace 12 that covers array substrate AR, the form that signal wire 16 reaches corresponding to the position of TFT.And, on the surface of the 2nd transparency carrier 27 that is surrounded by black matrix 28, be formed with the color filter layers 29 of regulation color, in addition,, form protective seam 30 to cover the mode on black matrix 28 and color filter layers 29 surfaces.And, on the surface of protective seam 30, form alignment films (not shown), thereby finish colored filter substrate CF.
And, color filter layers 29 opposed facing forms with the top electrode 26 and the colored filter substrate CF of array substrate AR, array substrate AR and colored filter substrate CF are faced mutually, by therebetween with liquid crystal 31 inclosures, thus the FFS type display panels 10A of acquisition embodiment 1.
Embodiment 2
As the display panels 10A of embodiment 1, illustration the FFS type display panels of full light-transmission type, but also can adopt the FFS type display panels of semi-transparent type.At this, the structure as the FFS type display panels 10B of embodiment 2, double light-transmission types describes with reference to Fig. 5 and Fig. 6.In addition, in the display panels 10B of embodiment 2,, use identical reference marks and omit its detailed description for the component part identical with the display panels 10A of embodiment 1.
The FFS type display panels 10B of the semi-transparent type of embodiment 2, be with the FFS type display panels 10A difference structurally of the full light-transmission type of embodiment 1, be formed with concavo-convex (omitting diagram) on the part on planar film 18 surfaces, form on irregular planar film 18 surfaces at this, be formed with the reflecting plate 19 that constitutes by the light reflective metal.This reflecting plate 19 is configured between the surface and bottom electrode 22 of planar film 18.Therefore, among the display panels 10B of embodiment 2, on the part that is formed with top electrode 26 separately, the part that is formed with reflecting plate 19 forms reflecting part 20, and remainder then forms the transmittance section.In addition, as the light reflective metal, suitably the reflecting plate of semi-transparent type display panels such as the conduct of aluminium, aluminium alloy or silver etc. forms material and the material that is widely used.
In the display panels 10B of this embodiment 2, form after the planar film 18, whole on the surface, form the light reflective metal film, thereafter, form reflecting plate 19 by photograph flat band method and etching method again.Then, at first keep reflecting plate 19 parts of each each pixel, and the light reflective metal film of remainder is removed again by photograph flat band method and etching method.And then by further carrying out etching, on the general distribution 13, and mounting terminal the gate insulating film 14 and passivating film 17 with surface distribution 34 on of low level distribution with the mounting terminal 33A of portion on, form contact hole 21 and 36a respectively, meanwhile, the mounting terminal of using the mounting terminal 33B of portion at high-order distribution forms contact hole 37a with on the passivating film 17 on the distribution 35.Thereafter manufacturing process is identical with the operation of the display panels 10A of embodiment 1.
And, 33A of mounting terminal portion that forms on the viewing area edge part in the display panels 10B of this embodiment 2 and the structure of 33B are identical with the corresponding construction of the display panels 10A of embodiment 1.Therefore, by the display panels 10B of embodiment 2, also can obtain to have the FFS type display panels of the semi-transparent type of effect same with embodiment 1 display panels 10A.
Below, to the Change Example of embodiment 1, promptly 33C～the 33E of mounting terminal portion among Fig. 7 describes.Wherein, use identical reference marks and omit its detailed description for the component part identical with the display panels 10A of embodiment 1.In addition, though in following Change Example, describe, be suitable for too for high-order distribution based on the low level distribution.
(Change Example 1)
The 33C of mounting terminal portion of Fig. 7 constitutes, dielectric film 23 is not formed up to the bottom of contact hole 36a, and be set on the both ends of the 1st nesa coating 38 (edge part of contact hole 36a), the contact area of the 1st nesa coating 38 and the 2nd nesa coating 41 is wider than the contact area of embodiment 1.Therefore, can make each mounting terminal portion low resistanceization, thereby stable voltage can be provided.
(Change Example 2)
The 33D of mounting terminal portion among Fig. 7 is formed, and the 1st nesa coating 38 covers and the bottom of mounting terminal with the contact hole 36a of distribution 34 electric connections at least.The words that describe in detail, the 1st nesa coating 38 covers the bottom (bottom: mounting terminal is used the top of distribution 34) of contact hole 36a, can enough expose the 1st nesa coating 38 and the mode of mounting terminal from it with the contact site of distribution 34, form dielectric film 23, and the 2nd nesa coating 41 is set on the outmost surface.This structure that to be a kind of mounting terminal covered by the 1st nesa coating 38 at least with the surface of distribution 34 thus, can prevent that mounting terminal is exposed in the etching environment with distribution 34.Therefore, can more effectively protect mounting terminal distribution 34.
(Change Example 3)
The 33E of mounting terminal portion of Fig. 7 constitutes, the 1st nesa coating 38 is formed on the subregion (for example having removed the central portion at both ends) of contact hole 36a bottom (bottom portion), and the covering mounting terminal is used the top of distribution 34, dielectric film 23 is formed on the edge part of contact hole 36a, and the 2nd nesa coating 41 is set up with the form that covers them.This structure is, can not be exposed in the etching environment with distribution 34 for making mounting terminal, for example mounting terminal is exposed a little with the both ends of distribution 34, and the structure that only surface of middle body is covered with the 1st nesa coating 38.When using this structure, in it forms zone,, make exposure be subjected to a certain degree destruction, also can protect mounting terminal with distribution 34 even because etching environment.
Claims (10)
1. a display panels has, and the edge part in the viewing area is formed with the array base palte of mounting terminal portion, it is characterized in that,
Described viewing area comprises: a plurality of sweep traces and signal wire, and it forms rectangular respectively; Bottom electrode and top electrode with a plurality of grooves, it is formed on the planar film, is configured in each by described sweep trace and described signal wire institute area surrounded mutually across dielectric film with facing, and is made of transparent conductive material respectively;
And described mounting terminal portion comprises:
The 1st dielectric film, it covers the surface of mounting terminal with distribution;
Contact hole, it is formed and runs through described mounting terminal with described the 1st dielectric film on the distribution;
The 1st conducting film, it covers the part of described contact hole bottom at least, and covers described the 1st dielectric film surface around the described contact hole, and electrically connects with distribution with described mounting terminal;
The 2nd dielectric film, it is set at described the 1st dielectric film surface, and has at least and the local overlapping opening of described contact hole;
The 2nd conducting film, it covers described the 2nd dielectric film surface around the described contact hole;
And described the 1st conducting film and described the 2nd conducting film form at described opening part and electrically connect.
2. display panels as claimed in claim 1 is characterized in that, described the 2nd dielectric film covers the inner peripheral surface and the edge part surface of described contact hole, and has the opening of its diameter less than described contact hole diameter near described contact hole central portion.
3. display panels as claimed in claim 1 is characterized in that described the 2nd dielectric film is formed on the edge part of described contact hole.
4. display panels as claimed in claim 1 is characterized in that, described the 1st conducting film is electrically connected at described mounting terminal distribution, and covers the bottom of described contact hole.
5. display panels as claimed in claim 1 is characterized in that, described the 1st conducting film is electrically connected at described mounting terminal distribution, and is formed on the subregion of described mounting terminal with the distribution surface.
6. display panels as claimed in claim 1, it is characterized in that, described the 1st conducting film and described the 2nd conducting film respectively with described bottom electrode and the described very identical material that powers on, and described the 2nd dielectric film is identical material with the described dielectric film that is disposed between described bottom electrode and the described top electrode.
7. display panels as claimed in claim 1, it is characterized in that, described mounting terminal forms with the metal material of the identical material of described sweep trace of described viewing area with the distribution employing, described the 1st dielectric film is to be formed by multicoat membrane, and the gate insulating film on this multicoat membrane and the described sweep trace that covers described viewing area and the passivating film that covers on the described signal wire are identical material.
8. display panels as claimed in claim 1, it is characterized in that, described mounting terminal adopts with the metal material of the identical material of described signal wire of described viewing area with distribution and forms, described the 1st dielectric film adopt with the described signal wire that covers described viewing area on the film formation of the identical material of passivating film.
9. as any described display panels of claim 1 to 4, it is characterized in that between the described planar film and described bottom electrode of described viewing area, the part is formed with reflecting plate.
10. the manufacture method of a display panels, it is the manufacture method that has the viewing area and be formed at the display panels of described viewing area mounting terminal portion on every side, described viewing area comprises: a plurality of sweep traces and signal wire, and it forms rectangular respectively; Bottom electrode and top electrode with a plurality of grooves, it is formed on the planar film, and practising physiognomy across dielectric film is configured in each over the ground by described sweep trace and described signal wire institute area surrounded, and is made of transparent conductive material respectively;
The manufacture method of described display panels is characterised in that, described mounting terminal portion makes by the operation of following (1)～(7):
(1) forms on the position in the mounting terminal of substrate surface, form with described sweep trace or the identical material of described signal wire, have the operation of the mounting terminal usefulness distribution of compulsory figure;
(2) cover the operation of described mounting terminal with the 1st dielectric film with distribution;
(3) formation runs through the operation of described mounting terminal with the contact hole of described the 1st dielectric film on the distribution;
(4) with the part that covers described contact hole bottom at least and with described mounting terminal with the electrical ways of connecting of distribution, form operation with the 1st conducting film of the identical material of described bottom electrode;
(5), form and be disposed at the operation of the 2nd dielectric film of the described bottom electrode of described viewing area and the dielectric film same composition between the described top electrode on the surface of described the 1st dielectric film;
(6) on described the 2nd dielectric film, form at least operation with the local overlapping opening of described contact hole;
(7) form the operation of mounting terminal, this mounting terminal by cover around the described contact hole described the 2nd dielectric film surface and in described opening part and the electric connection of described the 1st conducting film, constitute with the 2nd conducting film of the identical material of described top electrode.
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
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| JP2007-200435 | 2007-08-01 | ||
| JP2007200435 | 2007-08-01 | ||
| JP2007200435 | 2007-08-01 | ||
| JP2008125571A JP5154298B2 (en) | 2007-08-01 | 2008-05-13 | Liquid crystal display panel and manufacturing method thereof |
| JP2008125571 | 2008-05-13 | ||
| JP2008-125571 | 2008-05-13 |
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| CN101359139A CN101359139A (en) | 2009-02-04 |
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| KR (1) | KR100995428B1 (en) |
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| JP5470894B2 (en) * | 2009-02-18 | 2014-04-16 | セイコーエプソン株式会社 | Electro-optical device and electronic apparatus |
| CN103606549B (en) * | 2009-04-23 | 2017-06-09 | 群创光电股份有限公司 | Display panel and the image display system using the display panel |
| CN107275372B (en) * | 2009-04-23 | 2020-06-23 | 群创光电股份有限公司 | Display panel and image display system using same |
| CN102334152A (en) * | 2009-05-29 | 2012-01-25 | 夏普株式会社 | Active matrix substrate and display device having the same |
| JP5078176B2 (en) | 2010-07-21 | 2012-11-21 | 株式会社ジャパンディスプレイセントラル | Liquid crystal display |
| US8659734B2 (en) * | 2011-01-03 | 2014-02-25 | Samsung Display Co., Ltd. | Liquid crystal display and manufacturing method thereof |
| CN102156369B (en) * | 2011-01-18 | 2013-09-04 | 京东方科技集团股份有限公司 | Thin film transistor liquid crystal display (TFT-LCD) array substrate and manufacturing method thereof |
| JP5929097B2 (en) * | 2011-10-27 | 2016-06-01 | セイコーエプソン株式会社 | Liquid crystal device and electronic device |
| JP5907697B2 (en) | 2011-11-09 | 2016-04-26 | 三菱電機株式会社 | Wiring structure, thin film transistor array substrate including the same, and display device |
| CN103185999B (en) * | 2011-12-31 | 2015-09-16 | 上海中航光电子有限公司 | LCD (Liquid Crystal Display) array substrate and scan line structure thereof |
| JP5951329B2 (en) * | 2012-04-10 | 2016-07-13 | 株式会社ジャパンディスプレイ | Liquid crystal display |
| KR20130114998A (en) | 2012-04-10 | 2013-10-21 | 삼성디스플레이 주식회사 | Liquid crystal display device and method for manufacturing the same |
| JP5197873B2 (en) * | 2012-07-10 | 2013-05-15 | 株式会社ジャパンディスプレイセントラル | Liquid crystal display |
| KR102029986B1 (en) | 2012-12-13 | 2019-10-10 | 삼성디스플레이 주식회사 | Liquid crystal display and manufacturing method thereof |
| KR101994974B1 (en) * | 2013-01-10 | 2019-07-02 | 삼성디스플레이 주식회사 | Thin film trannsistor array panel and manufacturing method thereof |
| KR102078807B1 (en) | 2013-07-03 | 2020-02-20 | 삼성디스플레이 주식회사 | Liquid crystal display |
| CN103399434B (en) * | 2013-08-01 | 2015-09-16 | 深圳市华星光电技术有限公司 | Display panel and Fanout line structure thereof |
| CN112054031B (en) * | 2019-06-06 | 2023-06-27 | 夏普株式会社 | Active matrix substrate and method for manufacturing same |
| CN110989259B (en) | 2019-12-12 | 2023-01-10 | 京东方科技集团股份有限公司 | Array substrate, preparation method thereof and display device |
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| JP3920630B2 (en) * | 2001-11-16 | 2007-05-30 | 株式会社日立製作所 | Liquid crystal display |
| JP2004094020A (en) * | 2002-09-02 | 2004-03-25 | Toshiba Matsushita Display Technology Co Ltd | Liquid crystal display |
| JP4517063B2 (en) * | 2003-05-27 | 2010-08-04 | 日本電気株式会社 | Liquid crystal display |
| JP4381782B2 (en) * | 2003-11-18 | 2009-12-09 | 株式会社 日立ディスプレイズ | Liquid crystal display |
| JP4223993B2 (en) * | 2004-05-25 | 2009-02-12 | 株式会社 日立ディスプレイズ | Liquid crystal display |
| JP4039444B2 (en) * | 2005-07-15 | 2008-01-30 | エプソンイメージングデバイス株式会社 | Liquid crystal display device and electronic device |
| JP2007093859A (en) * | 2005-09-28 | 2007-04-12 | Sanyo Epson Imaging Devices Corp | Liquid crystal device and electronic apparatus |
| KR100744404B1 (en) * | 2006-04-06 | 2007-07-30 | 비오이 하이디스 테크놀로지 주식회사 | Method of manufacturing array substrate of lcd device |
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- 2008-05-13 JP JP2008125571A patent/JP5154298B2/en not_active Expired - Fee Related
- 2008-07-25 TW TW097128258A patent/TWI400523B/en not_active IP Right Cessation
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| Publication number | Publication date |
|---|---|
| TW200916898A (en) | 2009-04-16 |
| JP5154298B2 (en) | 2013-02-27 |
| KR20090013723A (en) | 2009-02-05 |
| TWI400523B (en) | 2013-07-01 |
| KR100995428B1 (en) | 2010-11-18 |
| CN101359139A (en) | 2009-02-04 |
| JP2009053658A (en) | 2009-03-12 |
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