CN101355827A - Integrated preparation method for integrated circuit and capacitance type micro-silicon microphone single slice as well as chip - Google Patents
Integrated preparation method for integrated circuit and capacitance type micro-silicon microphone single slice as well as chip Download PDFInfo
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- CN101355827A CN101355827A CNA2007100443226A CN200710044322A CN101355827A CN 101355827 A CN101355827 A CN 101355827A CN A2007100443226 A CNA2007100443226 A CN A2007100443226A CN 200710044322 A CN200710044322 A CN 200710044322A CN 101355827 A CN101355827 A CN 101355827A
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Abstract
The invention provides a monolithically integrated manufacturing method and a chip for an integrated circuit and a capacitor type micro-silicon microphone. The method comprises the following steps: firstly, a substrate with a first area and a second area is provided; secondly, according to the standard semiconductor technique flow, the integrated circuit with a grid conductive layer is manufactured on the first area, the grid conductive layer and a medium insulating layer covered on the grid conductive layer extend to the second area; and thirdly, the medium insulating layer on the second area is removed, and a first membrane layer, a sacrificial layer and a second membrane layer are generated in sequence on the exposed grid conductive layer by the low temperature technique below 400 DEG C, and then the sacrificial layer with the eroded part forms the capacitor type micro-silicon microphone, the exposed grid conductive layer and the first membrane layer are taken as one electrode of the capacitor, and the second membrane layer is taken as the other electrode of the capacitor, thereby realizing the monolithic integration of the integrated circuit and the capacitor type micro-silicon microphone.
Description
Technical field
The single chip integrated manufacture method that the present invention relates to a kind of integrated circuit and capacitance type micro-silicon microphone reaches the monolithic integrated chip of manufacture method formation thus.
Background technology
Microphone is a kind of transducer that voice signal is converted into the signal of telecommunication.The basic structure of Electret Condencer Microphone comprises as the sensitive membrane of electric capacity one utmost point with as the back pole plate of the other utmost point of electric capacity, when voice signal acts on microphone, acoustic pressure causes sensitive membrane to produce deformation, and then causing that the electric capacity between sensitive membrane and the back pole plate changes, this capacitance variations can be converted into the signal of telecommunication by subsequent process circuit.
Since 1962 invention electret capacitor microphone (ECM), through the development of decades, ECM has been widely used in every field from Bell laboratory scientist.But the traditional E CM at high temperature resident electric charge in its sensitive membrane can leak, and then causes ECM to lose efficacy.And in the technology of assembling consumer electronics product, device automation surface attachment process often need experience the welding temperature up to 260 ℃, so ECM is when being fitted to circuit board, can only rely on the manpower hand assembled at present, be accompanied by the development in consumer electronics product markets such as mobile phone, PDA, MP3 player and digital camera, ECM loses the upper hand in the consumer electronics product field of these production in enormous quantities just gradually.
MEMS is a new technology of high speed development in recent years, and its adopts sophisticated semiconductor manufacturing process, can realize the batch manufacturing of MEMS device.Compare with corresponding traditional devices, the MEMS device is in high temperature resistant, volume, power consumption, weight and obvious advantages is arranged in price.Be subjected to the advantage of high temperature in the surface mount and utilize the micro silicon microphone of MEMS technology manufacturing owing to have the capability of doing sth, become the substitute of ECM product just rapidly, there was suitable high growth in micro silicon microphone market in recent years.
Utilize little silicon microphone and important difference of traditional E CM of the processing of MEMS technology to be that bias voltage applies mode.ECM setovers to it by the resident electric charge that is stored in the microphone sensitive diaphragm, and little silicon microphone is directly to provide bias voltage to microphone by external power, need not in sensitive membrane, store resident electric charge, so danger that not resident electric charge at high temperature runs off, therefore little silicon microphone can bear the high temperature of required experience in the attachment process of automation surface, thereby can adopt automation surface attachment process, manpower is manual to be installed but not adopt.
At present, MEMS device and integrated circuit (IC) generally adopt the multi-disc integration mode integrated, promptly adopt different technological processes on different chips, independently to finish the making of circuit and MEMS device respectively, and then both hybrid package are integrated into a functional unit by different vendor.The benefit of this method is that the manufacturing process difficulty is little, and the design of MEMS device and manufacturing can be optimized separately.This kind method all has application in multiple MEMS device is integrated, for example resistance pressure type transducer etc.
Yet use for some, as the transducer of types such as the piezoelectricity of high output impedance and electric capacity, MEMS device and IC carry out that monolithic is integrated more to have superiority, and can effectively improve the device overall performance and reduce the influence of interference noise.The capacitance type micro-silicon microphone promptly has the characteristics of high output impedance, cause it to be subjected to the influence of environmental interference noise and parasitic capacitance bigger, therefore little silicon microphone adopts the monolithic integration mode and can improve a lot at aspects such as device overall performance, size, power consumptions with respect to adopting the multi-disc integrated form.
Realize that MEMS device and the single chip integrated manufacture method of IC have three kinds: the first, finish the making of MEMS device earlier, and then on same substrate, finish the making of IC; The second, MEMS device and IC single-step process in manufacturing process is intersected mutually and is carried out; The third method i.e. " back semiconductor technology ", adopts standard technology to make IC earlier, and then finishes the making of MEMS device on same substrate.
The shortcoming of first kind and second method is possible introduce pollution, causes IC to lose efficacy, and has further and may cause equipment pollution.The benefit of the third integrated approach is the pollution that can avoid preceding two kinds of integrated approaches to introduce, also can make full use of existing ripe IC standard manufacturing process, needn't revise the IC manufacturing process, and this helps to improve rate of finished products and reduces investment to equipment.The shortcoming of the third integrated approach is after IC finishes, and for not influencing the IC performance, in the MEMS device manufacturing processes high-temperature technology can not arranged thereafter, because after the IC manufacturing process finishes, can not bear high temperature more than 400 ℃ as the metals such as aluminium of metal electrode.And have materials such as adopting polysilicons in the MEMS technology now as structural material more, and the temperature of preparation polysilicon generally is higher than 400 degree.
Therefore, how to solve the problem that prior art exists and on same substrate, finish the making of the IC and the MEMS device of standard, become the technical task that those skilled in the art need to be resolved hurrily in fact.
Summary of the invention
A kind of integrated circuit that need not experience high temperature and single chip integrated manufacture method of capacitance type micro-silicon microphone of providing is provided.
Another object of the present invention is to provide a kind of monolithic integrated chip with highly sensitive integrated circuit and capacitance type micro-silicon microphone.
In order to achieve the above object, the single chip integrated manufacture method of integrated circuit provided by the invention and capacitance type micro-silicon microphone, comprise step: 1) substrate is provided, and surface thereof has the second area that is used to generate the first area of integrated circuit and is used to generate the capacitance type micro-silicon microphone; 2) generate integrated circuit according to the standard semiconductor technological process on described first area, grid conductive layer that described integrated circuit of while has and the dielectric insulation layer that is covered on the described grid conductive layer extend to described second area; 3) the described dielectric insulation layer on the described second area of removal is to expose the grid conductive layer that is positioned on the described second area; 4) adopt the low temperature process be lower than 400 ℃ on the grid conductive layer that is positioned on the described second area, to generate first rete so that the vibrating membrane that described first rete and described grid conductive layer are combined to form as the utmost point of electric capacity; 5) adopt low temperature process on described first rete, to generate sacrifice layer; 6) adopt low temperature process on described sacrifice layer, to form conductive back pole plate so that described back pole plate as another utmost point of electric capacity; 7) carry out photoetching and etching process to form gas port at described back pole plate; 8) corrosive liquid enters with the described sacrifice layer of partial corrosion from described gas port, and then makes between first rete and back pole plate and have air-gap; 9) carry out photoetching and corrode carrying on the back the chamber with respect to the second area place on another surface of described substrate to form.
Can adopt anisotropic etchant (being corrosive liquid for example) to carry out wet etching to form described back of the body chamber with potassium hydroxide and tetramethyl ammonium hydroxide solution, also can adopt deep trouth reflection ion etching to carry out dry etching, can on described vibrating membrane, offer narrow groove in addition to form described back of the body chamber.
Described first rete is monofilm or composite membrane, can be and adopt a kind of in silica, silicon nitride and the amorphous silicon material layer that physical vapor deposition process forms, also can be the silica that adopts chemical vapor deposition to form, silicon nitride, and the amorphous silicon material layer in a kind of, also can be the Parylene material layer that adopts low-pressure chemical vapor phase deposition to form, also can be the organic substance material layer that adopts spin-coating method or spraying process to form.
Described back pole plate can be metal level that adopts a kind of technology formation in physical vapor deposition process, chemical plating and the plating and the composite bed that the dielectric layer material forms.
The material of described sacrifice layer is a kind of in silica, metal, photoresist and the polyimides organic substance, when being metal or photoresist material, sacrificial layer material adopts the described sacrifice layer of wet etching, when sacrificial layer material is silica, amorphous silicon, photoresist, adopts the described sacrifice layer of dry etching when reaching polyimide material.
Described sacrifice layer can only stay the part that is in the whole edges of sound sensitive film continuously after by partial corrosion, also can only stay the part of disperseing to be in sound sensitive film edge, one place or edge, many places, also can only stay the part that is in the sound sensitive center membrane.
The present invention also provides the single chip integrated manufacture method of another integrated circuit and capacitance type micro-silicon microphone, it is characterized in that comprising step: 1) substrate is provided, and surface thereof has the second area that is used to generate the first area of integrated circuit and is used to generate the capacitance type micro-silicon microphone; 2) generate integrated circuit according to the standard semiconductor technological process on described first area, grid conductive layer that described integrated circuit of while has and the dielectric insulation layer that is covered on the described grid conductive layer extend to described second area; 3) the described dielectric insulation layer on the described second area of removal is to expose the grid conductive layer that is positioned on the described second area; 4) adopt the low temperature process that is lower than 400 ℃ on the described grid conductive layer that is positioned on the described second area, to generate supplement film so that described supplement film and described grid conductive layer are combined to form the utmost point of back pole plate as electric capacity; 5) carry out photoetching and etching process to form gas port at described back pole plate; 6) adopt low temperature process on described supplement film, to generate sacrifice layer; 7) adopt low temperature process on described sacrifice layer, to form conductive vibrating membrane so that described vibrating membrane as another utmost point of electric capacity; 8) carry out photoetching and corrode carrying on the back the chamber with respect to the second area place on another surface of described substrate to form; 9) corrosive liquid enters with the described sacrifice layer of partial corrosion from described gas port through back of the body chamber, and then makes and have air-gap between described back pole plate and the vibrating membrane to form the capacitance type micro-silicon microphone.
The single chip integrated manufacture method of described integrated circuit and capacitance type micro-silicon microphone also is included in the step of offering narrow groove on the described vibrating membrane.
Can adopt anisotropic etchant (being corrosive liquid for example) to carry out wet etching, also can adopt deep trouth reflection ion etching to carry out dry etching to form described back of the body chamber to form described back of the body chamber with potassium hydroxide and tetramethyl ammonium hydroxide solution.
The material of described sacrifice layer is a kind of in silica, metal, photoresist and the polyimides organic substance, when being metal or photoresist material, sacrificial layer material adopts the described sacrifice layer of wet etching, when sacrificial layer material is silica, amorphous silicon, photoresist, adopts the described sacrifice layer of dry etching when reaching polyimide material.
Described sacrifice layer can only stay the part that is in the whole edges of sound sensitive film continuously after by partial corrosion, also can only stay the part of disperseing to be in sound sensitive film edge, one place or edge, many places, also can only stay the part that is in the sound sensitive center membrane.
Described supplement film can be monofilm or composite membrane, can be and adopt a kind of in silica, silicon nitride and the amorphous silicon material layer that physical vapor deposition process forms, also can be the silica that adopts chemical vapor deposition to form, silicon nitride, and the amorphous silicon material layer in a kind of, also can be the Parylene material layer that adopts low-pressure chemical vapor phase deposition to form, also can be the organic substance material layer that adopts spin-coating method or spraying process to form.
Described vibrating membrane can be metal level that adopts a kind of technology formation in physical vapor deposition process, chemical plating and the plating and the composite bed that the dielectric layer material forms.
The present invention also provides the monolithic integrated chip of a kind of integrated circuit and capacitance type micro-silicon microphone, comprising: a surface has and is used to the substrate that generates the first area of integrated circuit and be used to generate the second area of capacitance type micro-silicon microphone; Comprise the integrated circuit district that the integrated circuit with grid conductive layer that grows on the described first area and described grid conductive layer extend to described second area; And the capacitance type micro-silicon microphone area, it comprises on the grid conductive layer that is grown on the described second area first rete as electric capacity one utmost point, be grown in articulamentum on described first rete, be grown in can conduct electricity on the described articulamentum and as second rete of another utmost point of electric capacity and the gas port that in described first rete and described second rete, forms on the rete as back pole plate and on another surface of described substrate with respect to the be corroded back of the body chamber of formation, second area place.
Wherein, can adopt a kind of wet etching that carries out in potassium hydroxide and the Tetramethylammonium hydroxide TMAH solution, also can adopt deep trouth reflection ion etching to carry out dry etching to form described back of the body chamber to form described back of the body chamber.
Described first rete and described grid conductive layer consist of the sound sensitive film, and described second rete is a back pole plate; Perhaps described first rete and described grid conductive layer are formed back pole plate, and described second rete is the sound sensitive film, and described sound sensitive film can offer narrow groove.
Described articulamentum can be in the whole edges of described sound sensitive film continuously, also can disperse to be in one or more of described sound sensitive film edge, also can be in described sound sensitive center membrane, its material is a kind of in silica, metal, photoresist and the polyimides organic substance.
Described first rete is monofilm or composite membrane, can be and adopt a kind of in silica, silicon nitride and the amorphous silicon material layer that physical vapor deposition process forms, also can be the silica that adopts chemical vapor deposition to form, silicon nitride, and the amorphous silicon material layer in a kind of, also can be the organic substance material layer that adopts spin-coating method or spraying process to form, also can be the Parylene material layer that adopts low-pressure chemical vapor phase deposition to form.
Described second rete can be the composite conducting structure sheaf that the dielectric layer material forms, and can be the metal conducting layer that adopts any one technology in physical vapor deposition process, chemical plating and the plating to form.
In sum, the single chip integrated manufacture method of integrated circuit of the present invention and capacitance type micro-silicon microphone adopts low temperature process integrated circuit (IC)-components can be integrated with micro silicon microphone, and make metal interconnectedly etc. realizing the integrated of existing circuit on little silicon microphone same substrate, and then form monolithic integrated chip with highly sensitive integrated circuit and little silicon microphone.
Description of drawings
Fig. 1 to Fig. 7 is the operating process schematic diagram of the single chip integrated manufacture method of integrated circuit of the present invention and capacitance type micro-silicon microphone.
Fig. 8 to Figure 10 is embodiment one schematic diagram of the monolithic integrated chip of the single chip integrated manufacture method formation of employing integrated circuit of the present invention and capacitance type micro-silicon microphone, wherein, Fig. 8 is the three-dimensional profile perspective of the fixing full monolithic integrated chip in edge for the sound sensitive film, Fig. 9 is the three-dimensional profile perspective of the monolithic integrated chip of cantilever beam structure for the sound sensitive film, and Figure 10 is the bottom view of monolithic integrated chip.
Figure 11 to 12 is embodiment two schematic diagrames of the monolithic integrated chip of the single chip integrated manufacture method formation of employing integrated circuit of the present invention and capacitance type micro-silicon microphone, wherein, Figure 11 is the three-dimensional profile perspective of monolithic integrated chip, and Figure 12 is the bottom view of monolithic integrated chip.
Embodiment
The single chip integrated manufacture method of integrated circuit of the present invention and capacitance type micro-silicon microphone is used to realize that the monolithic of circuit devcie and MEMS device is integrated, it does not need standard semiconductor technology is changed, only need to proceed the manufacturing of MEMS device on the circuit silicon chip of standard semiconductor technology finishing, below will be integrated into example with the monolithic of integrated circuit and little silicon microphone and be elaborated.
Embodiment one:
See also Fig. 1 to Fig. 8, it mainly may further comprise the steps the single chip integrated manufacture method of integrated circuit of the present invention and capacitance type micro-silicon microphone:
The first step: as shown in Figure 1, provide a substrate 20, surface thereof has the second area 21 that is used to generate the first area 22 of integrated circuit and is used to generate little silicon microphone.
Second step: generate the integrated circuit that cooperates with little silicon microphone in described first area 22 according to the standard semiconductor technological process, generating at described second area 21 simultaneously has grid conductive layer 24 and is covered on the described grid conductive layer 24 dielectric insulation layer 25c, described integrated circuit can be field-effect transistor, resistance capacitance etc., be simplicity of illustration, described integrated circuit is that example describes with MOS (metal-oxide-semiconductor) memory (MOSFET) only.The MOSFET device that is formed by standard semiconductor technology on described first area 22 comprises field oxide 25a, gate oxide 25b, source leakage doped region 23, grid conductive layer 24, dielectric insulation layer 25c, metal conducting layer 26 and passivation layer 27 etc., on semiconductor chip 20, reserve the second area 21 of promising making MEMS device simultaneously, when making integrated circuits, first area 22 stays field oxide 25a, at the grid conductive layer on the field oxide 25a 24 and grow in dielectric insulation layer 25c on the grid conductive layer 24 at second area 21.
The 3rd step: as shown in Figure 2, remove on the second area 21 dielectric insulation layer 25c (as silica) with expose be positioned at as described in grid conductive layer 24 on the second area, it can be polysilicon or multi-crystal silicification thing.
The 4th step: as shown in Figure 3, the concrete application need of basis on semiconductor chip 20, employing be lower than that 400 ℃ low temperature process generates first rete 28 on the grid conductive layer 24 that is positioned on the described second area so that the vibrating membrane that described first rete and described grid conductive layer 24 are combined to form (being the sound sensitive film) as the utmost point of electric capacity, described first rete 28 can be monofilm or composite membrane, can be and adopt physical vapor deposition (PVD) technology (as sputter, evaporation) silica that forms, material layer such as silicon nitride and amorphous silicon, also can be the silica that adopts formation such as chemical vapor deposition (as plasma-reinforced chemical vapor deposition PECVD and aumospheric pressure cvd APCVD), silicon nitride, material layers such as amorphous silicon, also can be the Parylene material layer that adopts low-pressure chemical vapor phase deposition to form (LPCVD), also can be the organic substance material that adopts spin-coating method or spraying process to form (as polyimides etc.) layer.
The 5th step: as shown in Figure 4, adopt described low temperature process to generate sacrifice layer 29 on described first rete, the material of sacrifice layer 29 can be organic substances such as silica, metal, photoresist or polyimides, can obtain the sacrifice layer figure by photoetching, etching process.
The 6th step: as shown in Figure 5, adopt low temperature process described sacrifice layer form conductive back pole plate 30 so that described back pole plate 30 as another utmost point of electric capacity, it can be the dielectric layer material that the formed metal level of way that adopts physical vapor deposition (PVD) technology (as sputter, evaporation), chemical plating or plating and low temperature generates and forms composite bed.
The 7th step: on described back pole plate 30, carry out photoetching and etching process on described back pole plate, to form a plurality of gas ports.Also obtain electrical cable 34 when making gas port, electrical cable 34 is realized being electrically connected of little silicon microphone and integrated circuit.
The 8th step: as shown in Figure 6, carry out photoetching from semiconductor chip 20 another surfaces (being the back side) earlier with respect to second area 21, adopt anisotropic etchant wet etching (for example with potassium hydroxide KOH or Tetramethylammonium hydroxide TMAH etc. as corrosive liquid) or dry etching (for example deep trouth reflection ion etching DRIE) to field oxide 25a (this field oxide 25a is also generated when making integrated circuit) then, can form thus and carry on the back chamber 33.
The 9th step: as shown in Figure 7, corrosive liquid enters with the described sacrifice layer 29 of partial corrosion from the front from described a plurality of gas ports, and then make between first rete 28 (sound sensitive film) and back pole plate 30 and have air-gap, when being metal or photoresist material, adopt sacrifice layer 29 materials wet etching usually; When sacrifice layer 29 materials are silica, amorphous silicon, photoresist, can adopt dry etching when reaching polyimide material, described sacrifice layer 29 is connected described sound sensitive film by part 29a left behind the partial corrosion with back pole plate, left part 29a can be in the whole edges of sound sensitive film continuously, also can disperse to be in one or more of sound sensitive film edge, it also can be in the sound sensitive center membrane.
In addition, when making, can on described sound sensitive film, offer narrow groove according to actual needs, to improve the performance of little silicon microphone, simultaneously, those skilled in the art also can adjust the abovementioned steps order according to actual conditions, for example can corrode sacrifice layer earlier and finish the step that back of the body chamber generates again, in addition, also can method of the present invention be merged in the making flow process of capacitance type sensor according to the making flow process of other capacitance type sensor.
Can form the monolithic integrated chip of integrated circuit of the present invention and capacitance type micro-silicon microphone by above-mentioned steps, as shown in Figure 8, described integrated circuit with comprise substrate 20, integrated circuit district and capacitance type micro-silicon microphone area with the monolithic integrated chip of capacitance type micro-silicon microphone.
One surface of described substrate 20 has the second area 21 that is used to generate the first area 22 of the integrated circuit that cooperates with described little silicon microphone and is used to generate the capacitance type micro-silicon microphone.
Described integrated circuit district comprises the integrated circuit that grows on the described first area 22, and the grid conductive layer 24 that described integrated circuit comprises extends to described second area 21, as shown in Figure 2.
Described capacitance type sensor district comprises first rete (for example sound sensitive film 28a) on the grid conductive layer that is grown on the described second area 22, be grown in the articulamentum on described first rete, be grown in conductive second rete on the described articulamentum (for example back pole plate 30a), the back of the body chamber 33 that is corroded and forms with respect to second area 21 places on described substrate 20 another surfaces, reach a plurality of gas ports 31 that form at described back pole plate 30a, wherein, described articulamentum by aforesaid sacrifice layer after form by partial corrosion, it can be in the described whole edges of sound sensitive film 28a continuously so that the whole edges of described sound sensitive film 28a all are connected with back pole plate 30a by described articulamentum, it also can disperse to be in sound sensitive membrane portions edge so that one or more of sound sensitive film edge are connected with back pole plate by described articulamentum, see also Fig. 9 and Figure 10, described sound sensitive film 28b is a cantilever beam structure, a place that is sound sensitive film 28b edge is connected by articulamentum with back pole plate 30a, and sound sensitive film 28b remainder is in vacant state, the sound sensitive film 28b of this cantilever beam structure has high sensitivity to reach the outstanding advantage of the insensitive grade of residual stress in the diaphragm all around for the sound sensitive film 28a that all is connected with back pole plate.Under same sensitivity index, the sound sensitive membrane structure 28b of described beam type can cause littler chip size and reduce the unit manufacture cost and other advantages, also can on the sound sensitive film, offer slit 35 simultaneously, so can change the frequency response curve of described little silicon microphone, in design process, can carry out dimensionally-optimised to slit 35 according to different application to improve the performance of described little silicon microphone.
Be noted that, the structure of articulamentum is not to exceed with above stated specification, it also can adopt other structure, for example, it can be in about the sound sensitive film that two edges form left and right sides cantilever beam so that 2 of sound sensitive film edges are connected with back pole plate by described articulamentum, and perhaps described articulamentum is in described sound sensitive center membrane so that the center of described sound sensitive film is connected with back pole plate by described articulamentum.
In addition, material, structure and the generation type etc. in described first rete, second rete and back of the body chamber etc. have all been described in detail in aforementioned manufacture method, no longer repeat at this.
Embodiment two:
See also Figure 11 and 12, the manufacture method of present embodiment and embodiment one is similar, difference is the order of making back pole plate and sound sensitive film is adjusted, promptly at first carried out for first to the 3rd step successively according to above stated specification, then carried out for the 4th step, promptly adopt the low temperature process that is lower than 400 ℃ on the described grid conductive layer that is positioned on the described second area, to generate supplement film (i.e. first rete 28) so that described supplement film and described grid conductive layer are combined to form the utmost point of back pole plate 28c as electric capacity, then on described back pole plate 28c, form a plurality of gas ports by photoetching and corrosion, adopt low temperature process on described supplement film, to generate sacrifice layer then, then adopt low temperature process on described sacrifice layer, to form conductive vibrating membrane (being sound sensitive film 30b) again so that described vibrating membrane as another utmost point of electric capacity, then carry out photoetching and corrode carrying on the back chamber 33 with respect to second area 21 places on another surface of described substrate again to form, at last corrosive liquid is entered with the partial corrosion sacrifice layer by a plurality of gas ports from back of the body chamber 33, thereby between sound sensitive film 30b and back pole plate 28c, obtain air-gap 31, thereby make sound sensitive film 30b be discharged the making of finishing little silicon microphone.
Described sacrifice layer by partial corrosion after left part also can be in the diverse location of sound sensitive film as previously mentioned, for example be in the whole edges of sound sensitive film, also can be and be in sound sensitive film edge, one place or edge, many places, also can be and be in sound sensitive center membrane etc.; And the generative process of first rete among described supplement film and the embodiment one is identical, and described vibrating membrane is identical with the process that composite membrane among the embodiment one generates, and the material of sacrifice layer and generative process are also identical with explanation among the embodiment one, so no longer repeat at this.
In addition, when making, also can on described sound sensitive film, offer narrow groove according to actual needs, to improve the performance of little silicon microphone.
Can form the monolithic integrated chip of another integrated circuit and little silicon microphone equally according to above-mentioned manufacture method, its with embodiment one in different being of monolithic integrated chip of formed integrated circuit and little silicon microphone: the monolithic integrated chip of the formed integrated circuit of present embodiment and little silicon microphone comprises the sound sensitive film of capacitance type micro-silicon microphone between back of the body chamber and back pole plate, and the sound sensitive film of the capacitance type micro-silicon microphone that the monolithic integrated chip of formed integrated circuit and little silicon microphone comprises among the embodiment one is positioned on the back pole plate.
Be noted that, the single chip integrated manufacture method of integrated circuit of the present invention and capacitance type micro-silicon microphone need not to carry out according to the abovementioned steps order fully, those skilled in the art can adjust step ground sequencing according to actual conditions, for example can form back of the body chamber earlier and then form a plurality of gas ports etc.
In sum, the present invention proposes the integrated circuit of a cover " back semiconductor technology " and the single chip integrated manufacture method of capacitance type micro-silicon microphone, be included in structures such as adopting low temperature process making back pole plate, sound sensitive film, sacrifice layer on the substrate of finishing standard semiconductor technology and form little silicon microphone, and make metal interconnectedly etc. to realize the integrated of existing circuit on little silicon microphone same substrate, so integrated circuit (IC)-components can be integrated to form with micro silicon microphone and have highly sensitive monolithic integrated chip.
Above-described embodiment is only for setting forth technological thought of the present invention and characteristics; its purpose is to make the personage who knows this technology can understand content of the present invention and implements according to this; but can not be as protection scope of the present invention; be the disclosed spirit of every foundation and modified or change, must think and include protection scope of the present invention in.The scope of protection of present invention is as the criterion with the scope that appended claims defines.
Claims (53)
1. the single chip integrated manufacture method of integrated circuit and capacitance type micro-silicon microphone is characterized in that comprising step:
1) provide a substrate, surface thereof has the second area that is used to generate the first area of integrated circuit and is used to generate the capacitance type micro-silicon microphone;
2) generate integrated circuit according to the standard semiconductor technological process on described first area, grid conductive layer that described integrated circuit of while has and the dielectric insulation layer that is covered on the described grid conductive layer extend to described second area;
3) the described dielectric insulation layer on the described second area of removal is to expose the grid conductive layer that is positioned on the described second area;
4) adopt the low temperature process be lower than 400 ℃ on the grid conductive layer that is positioned on the described second area, to generate first rete so that
Described first rete be positioned at vibrating membrane that the grid conductive layer on the described second area is combined to form a utmost point as electric capacity;
5) adopt described low temperature process on described first rete, to generate sacrifice layer;
6) adopt low temperature process on described sacrifice layer, to form conductive back pole plate so that described back pole plate as another utmost point of electric capacity;
7) carry out photoetching and etching process to form gas port at described back pole plate;
8) corrosive liquid enters with the described sacrifice layer of partial corrosion from described gas port, and then makes between first rete and back pole plate and have air-gap;
9) carry out photoetching and corrode carrying on the back the chamber with respect to the second area place on another surface of described substrate to form.
2. the single chip integrated manufacture method of integrated circuit as claimed in claim 1 and capacitance type micro-silicon microphone is characterized in that: adopt anisotropic etchant to carry out wet etching to form described back of the body chamber.
3. the single chip integrated manufacture method of integrated circuit as claimed in claim 2 and capacitance type micro-silicon microphone is characterized in that: described anisotropic etchant is a kind of in potassium hydroxide and the tetramethyl ammonium hydroxide solution.
4. the single chip integrated manufacture method of integrated circuit as claimed in claim 1 and capacitance type micro-silicon microphone is characterized in that: adopt deep trouth reflection ion etching to carry out dry etching to form described back of the body chamber.
5. the single chip integrated manufacture method of integrated circuit as claimed in claim 1 and capacitance type micro-silicon microphone is characterized in that also being included in the step of offering narrow groove on the described vibrating membrane.
6. the single chip integrated manufacture method of integrated circuit as claimed in claim 1 and capacitance type micro-silicon microphone is characterized in that: described sacrifice layer only stays the part that is in the whole edges of described vibrating membrane continuously after by partial corrosion.
7. the single chip integrated manufacture method of integrated circuit as claimed in claim 1 and capacitance type micro-silicon microphone is characterized in that: described sacrifice layer only stays after by partial corrosion and is dispersed in one or more part of described vibrating membrane edge.
8. the single chip integrated manufacture method of integrated circuit as claimed in claim 1 and capacitance type micro-silicon microphone is characterized in that: described sacrifice layer only stays the part that is in described vibrating membrane center after by partial corrosion.
9. the single chip integrated manufacture method of integrated circuit as claimed in claim 1 and capacitance type micro-silicon microphone is characterized in that: described first rete is monofilm or composite membrane.
10. as the single chip integrated manufacture method of claim 1 or 9 described integrated circuits and capacitance type micro-silicon microphone, it is characterized in that: a kind of in the silica, silicon nitride and the amorphous silicon material layer that adopt physical vapor deposition process and form of described first rete.
11. the single chip integrated manufacture method as claim 1 or 9 described integrated circuits and capacitance type micro-silicon microphone is characterized in that: described first rete for the silica that adopts chemical vapor deposition to form, silicon nitride, and the amorphous silicon material layer in a kind of.
12. the single chip integrated manufacture method as claim 1 or 9 described integrated circuits and capacitance type micro-silicon microphone is characterized in that: the Parylene material layer of described first rete for adopting low-pressure chemical vapor phase deposition to form.
13. the single chip integrated manufacture method as claim 1 or 9 described integrated circuits and capacitance type micro-silicon microphone is characterized in that: the organic substance material layer of described first rete for adopting spin-coating method or spraying process to form.
14. the single chip integrated manufacture method of integrated circuit as claimed in claim 1 and capacitance type micro-silicon microphone is characterized in that: described back pole plate is the composite bed that metal level and dielectric layer material form.
15. the single chip integrated manufacture method of integrated circuit as claimed in claim 14 and capacitance type micro-silicon microphone is characterized in that: described metal level forms for adopting any one technology in physical vapor deposition process, chemical plating and the plating.
16. the single chip integrated manufacture method of integrated circuit as claimed in claim 1 and capacitance type micro-silicon microphone is characterized in that: the material of described sacrifice layer is a kind of in silica, metal, photoresist and the polyimides organic substance.
17. the single chip integrated manufacture method as claim 1 or 16 described integrated circuits and capacitance type micro-silicon microphone is characterized in that: when sacrificial layer material is metal or photoresist material, adopt the described sacrifice layer of wet etching.
18. the single chip integrated manufacture method as claim 1 or 16 described integrated circuits and capacitance type micro-silicon microphone is characterized in that: when sacrificial layer material be silica, amorphous silicon, photoresist, and polyimide material in a kind of the time adopt the described sacrifice layer of dry etching.
19. the single chip integrated manufacture method of integrated circuit and capacitance type micro-silicon microphone is characterized in that comprising step:
1) provide a substrate, surface thereof has the second area that is used to generate the first area of integrated circuit and is used to generate the capacitance type micro-silicon microphone;
2) generate integrated circuit according to the standard semiconductor technological process on described first area, grid conductive layer that described integrated circuit of while has and the dielectric insulation layer that is covered on the described grid conductive layer extend to described second area;
3) the described dielectric insulation layer on the described second area of removal is to expose the grid conductive layer that is positioned on the described second area;
4) adopt the low temperature process that is lower than 400 ℃ on the described grid conductive layer that is positioned on the described second area, to generate supplement film so that described supplement film is combined to form the utmost point of back pole plate as electric capacity with the grid conductive layer that is positioned on the described second area;
5) carry out photoetching and etching process to form gas port at described back pole plate;
6) adopt described low temperature process on described supplement film, to generate sacrifice layer;
7) adopt low temperature process on described sacrifice layer, to form conductive vibrating membrane so that described vibrating membrane as another utmost point of electric capacity;
8) carry out photoetching and corrode carrying on the back the chamber with respect to the second area place on another surface of described substrate to form;
9) corrosive liquid enters with the described sacrifice layer of partial corrosion from described gas port through back of the body chamber, and then makes and have air-gap between described combined films and the vibrating membrane to form the capacitance type micro-silicon microphone.
20. the single chip integrated manufacture method of integrated circuit as claimed in claim 19 and capacitance type micro-silicon microphone is characterized in that also being included in the step of offering narrow groove on the described vibrating membrane.
21. the single chip integrated manufacture method of integrated circuit as claimed in claim 19 and capacitance type micro-silicon microphone is characterized in that: adopt anisotropic etchant to carry out wet etching to form described back of the body chamber.
22. the single chip integrated manufacture method of integrated circuit as claimed in claim 21 and capacitance type micro-silicon microphone is characterized in that: described anisotropic etchant is a kind of in potassium hydroxide and the tetramethyl ammonium hydroxide solution.
23. the single chip integrated manufacture method of integrated circuit as claimed in claim 19 and capacitance type micro-silicon microphone is characterized in that: adopt deep trouth reflection ion etching to carry out dry etching to form described back of the body chamber.
24. the single chip integrated manufacture method of integrated circuit as claimed in claim 19 and capacitance type micro-silicon microphone is characterized in that: described sacrifice layer only stays the part that is in the whole edges of described vibrating membrane continuously after by partial corrosion.
25. the single chip integrated manufacture method of integrated circuit as claimed in claim 19 and capacitance type micro-silicon microphone is characterized in that: described sacrifice layer only stays after by partial corrosion and is dispersed in one or more part of described vibrating membrane edge.
26. the single chip integrated manufacture method of integrated circuit as claimed in claim 19 and capacitance type micro-silicon microphone is characterized in that: described sacrifice layer only stays the part that is in described vibrating membrane center after by partial corrosion.
27. the single chip integrated manufacture method of integrated circuit as claimed in claim 19 and capacitance type micro-silicon microphone is characterized in that: described supplement film is monofilm or composite membrane.
28. the single chip integrated manufacture method as claim 19 or 27 described integrated circuits and capacitance type micro-silicon microphone is characterized in that: a kind of in the silica, silicon nitride and the amorphous silicon material layer that adopt physical vapor deposition process and form of described supplement film.
29. the single chip integrated manufacture method as claim 19 or 27 described integrated circuits and capacitance type micro-silicon microphone is characterized in that: described supplement film for the silica that adopts chemical vapor deposition to form, silicon nitride, and the amorphous silicon material layer in a kind of.
30. the single chip integrated manufacture method as claim 19 or 27 described integrated circuits and capacitance type micro-silicon microphone is characterized in that: the Parylene material layer of described supplement film for adopting low-pressure chemical vapor phase deposition to form.
31. the single chip integrated manufacture method as claim 19 or 27 described integrated circuits and capacitance type micro-silicon microphone is characterized in that: the organic substance material layer of described supplement film for adopting spin-coating method or spraying process to form.
32. the single chip integrated manufacture method of integrated circuit as claimed in claim 19 and capacitance type micro-silicon microphone is characterized in that: described vibrating membrane is the composite bed that metal level and dielectric layer material form.
33. the single chip integrated manufacture method of integrated circuit as claimed in claim 32 and capacitance type micro-silicon microphone is characterized in that: described metal level forms for adopting any one technology in physical vapor deposition process, chemical plating and the plating.
34. the single chip integrated manufacture method of integrated circuit as claimed in claim 19 and capacitance type micro-silicon microphone is characterized in that: the material of described sacrifice layer is a kind of in silica, metal, photoresist and the polyimides organic substance.
35. the single chip integrated manufacture method as claim 19 or 34 described integrated circuits and capacitance type micro-silicon microphone is characterized in that: when sacrificial layer material is metal or photoresist material, adopt the described sacrifice layer of wet etching.
36. the single chip integrated manufacture method as claim 19 or 34 described integrated circuits and capacitance type micro-silicon microphone is characterized in that: when sacrificial layer material be silica, amorphous silicon, photoresist, and polyimide material in a kind of the time adopt the described sacrifice layer of dry etching.
37. the monolithic integrated chip of integrated circuit and capacitance type micro-silicon microphone, it is characterized in that comprising: substrate, surface thereof have the second area that is used to generate the first area of integrated circuit and is used to generate the capacitance type micro-silicon microphone;
The integrated circuit district comprises the integrated circuit with grid conductive layer that grows on the described first area, and described grid conductive layer extends to described second area;
The capacitance type micro-silicon microphone area, it comprises on the grid conductive layer that is grown on the described second area first rete as electric capacity one utmost point, be grown in articulamentum on described first rete, be grown in and can conduct electricity on the described articulamentum and as gas port that forms on second rete of another utmost point of electric capacity, the rete as back pole plate in described first rete and described second rete and the back of the body chamber that is corroded and forms with respect to the second area place on another surface of described substrate.
38. integrated circuit as claimed in claim 37 and capacitance type micro-silicon microphone monolithic integrated chip is characterized in that: a kind of wet etching that carries out in employing potassium hydroxide and the tetramethyl ammonium hydroxide solution is to form described back of the body chamber.
39. the monolithic integrated chip of integrated circuit as claimed in claim 37 and capacitance type micro-silicon microphone is characterized in that: adopt deep trouth reflection ion etching to carry out dry etching to form described back of the body chamber.
40. the monolithic integrated chip of integrated circuit as claimed in claim 37 and capacitance type micro-silicon microphone is characterized in that: described first rete and described grid conductive layer are formed the sound sensitive film, and described second rete is a back pole plate.
41. the monolithic integrated chip of integrated circuit as claimed in claim 37 and capacitance type micro-silicon microphone is characterized in that: described first rete and described grid conductive layer are formed back pole plate, and described second rete is the sound sensitive film.
42. the monolithic integrated chip as claim 40 or 41 described integrated circuits and capacitance type micro-silicon microphone is characterized in that also comprising: described sound sensitive film offers narrow groove.
43. the monolithic integrated chip as claim 40 or 41 described integrated circuits and capacitance type micro-silicon microphone is characterized in that: described articulamentum is in the whole edges of described sound sensitive film continuously.
44. the monolithic integrated chip as claim 40 or 41 described integrated circuits and capacitance type micro-silicon microphone is characterized in that: described articulamentum dispersion is in one or more of described sound sensitive film edge.
45. the monolithic integrated chip as claim 40 or 41 described integrated circuits and capacitance type micro-silicon microphone is characterized in that: described articulamentum is in described sound sensitive center membrane.
46. the monolithic integrated chip of integrated circuit as claimed in claim 37 and capacitance type micro-silicon microphone is characterized in that: described first rete is monofilm or composite membrane.
47. the monolithic integrated chip as claim 37 or 46 described integrated circuits and capacitance type micro-silicon microphone is characterized in that: a kind of in the silica, silicon nitride and the amorphous silicon material layer that adopt physical vapor deposition process and form of described first rete.
48. the monolithic integrated chip as claim 37 or 46 described integrated circuits and capacitance type micro-silicon microphone is characterized in that: described first rete for the silica that adopts chemical vapor deposition to form, silicon nitride, and the amorphous silicon material layer in a kind of.
49. the monolithic integrated chip as claim 37 or 46 described integrated circuits and capacitance type micro-silicon microphone is characterized in that: the Parylene material layer of described first rete for adopting low-pressure chemical vapor phase deposition to form.
50. the monolithic integrated chip as claim 37 or 46 described integrated circuits and capacitance type micro-silicon microphone is characterized in that: the organic substance material layer of described first rete for adopting spin-coating method or spraying process to form.
51. the monolithic integrated chip of integrated circuit as claimed in claim 37 and capacitance type micro-silicon microphone is characterized in that: the material of described articulamentum is a kind of in silica, metal, photoresist and the polyimides organic substance.
52. the monolithic integrated chip of integrated circuit as claimed in claim 37 and capacitance type micro-silicon microphone is characterized in that: described second rete is the composite bed that metal level and dielectric layer material form.
53. the monolithic integrated chip of integrated circuit as claimed in claim 52 and capacitance type micro-silicon microphone is characterized in that: described metal level is by adopting any one technology in physical vapor deposition process, chemical plating and the plating to be formed.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2007100443226A CN101355827B (en) | 2007-07-27 | 2007-07-27 | Integrated preparation method for integrated circuit and capacitance type micro-silicon microphone single slice as well as chip |
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| CN2007100443226A CN101355827B (en) | 2007-07-27 | 2007-07-27 | Integrated preparation method for integrated circuit and capacitance type micro-silicon microphone single slice as well as chip |
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| CN101355827A true CN101355827A (en) | 2009-01-28 |
| CN101355827B CN101355827B (en) | 2012-01-04 |
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