CN101355067A - Improved electrical connections for multichip modules - Google Patents

Improved electrical connections for multichip modules Download PDF

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Publication number
CN101355067A
CN101355067A CNA2008101300084A CN200810130008A CN101355067A CN 101355067 A CN101355067 A CN 101355067A CN A2008101300084 A CNA2008101300084 A CN A2008101300084A CN 200810130008 A CN200810130008 A CN 200810130008A CN 101355067 A CN101355067 A CN 101355067A
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China
Prior art keywords
chip
lead
semiconductor chip
semiconductor
forms
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Granted
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CNA2008101300084A
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Chinese (zh)
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CN101355067B (en
Inventor
李硕灿
金玟佑
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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Publication of CN101355067A publication Critical patent/CN101355067A/en
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Publication of CN101355067B publication Critical patent/CN101355067B/en
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Abstract

A semiconductor package includes a first semiconductor chip mounted on a substrate and a second semiconductor chip mounted on top of the first semiconductor chip. A plurality of metal lines is deposited on the top of the first chip, and the metal lines are isolated from circuitry in the first chip. Wire bonds connect pads on the second chip to metal lines on the first chip. Additional wired bonds connect the metal lines on the first chip to terminals on the substrate. Conductive through-silicon vias or solder bumps may replace the wire bonds, and additional chips may be included in the package.

Description

The improved electrical connection of multi-chip module
The present invention require the 10-2007-0073476 korean patent application submitted in Korea S Department of Intellectual Property on July 23rd, 2007 and on February 15th, 2008 submit to the 12/032nd, the priority of No. 430 U.S. Patent applications, its full content is contained in this by reference.
Technical field
The present invention relates in general to multi-chip module, more particularly, relates to the mode that is electrically connected between module or the chip in module that is electrically connected to.
Background technology
Along with electronic product develops into density and the performance of littler size and Geng Gao, semiconductor correspondingly becomes littler and its assembly becomes closeer with being connected.This has caused a plurality of semiconductor chips to be stacked on the development of the multicore sheet encapsulation (MCP) in the substrate (for example, printed circuit board (PCB)) again.Not only size is little but also density is high, performance is high in the encapsulation of Zhi Zaoing like this.
Yet along with the increase of density and reducing of size, multi-chip module can go wrong.For example, in Fig. 1, MCP comprises first semiconductor chip 10 that is installed in the substrate 12.Second semiconductor chip 14 is installed on the semiconductor chip 10, thereby forms the MCP that comprises semiconductor chip 10 and 14.Comprise terminal than chip 14 big chips 10, for example, terminal 16 and 18.Chip 14 also comprises terminal, for example, and terminal 20 and 22.Can find out, tightr at the interval of the terminal on the chip 14 than the interval of the terminal on the chip 10.Terminal on two chips is electrically connected to conductive welding disk by lead-in wire bonding (for example, lead-in wire bonding 28 and 30), for example, is formed on the pad 24 and 26 in the substrate 12.
Terminal on the chip 14 (for example, terminal 20 and 22) is higher than substrate 12 further away from each other and more than the terminal on the chip 10 (for example, terminal 16 and 18).As a result, compare with the lead-in wire bonding that the terminal on the chip 10 is connected to the substrate pad, the lead-in wire bonding that the terminal on the chip 14 is connected to substrate 12 is longer, and substrate forms bigger angle relatively.And the terminal on the chip 14 is more closely close.Thereby all these factors may be in conjunction with causing lead deformation (wire sweeping), and wherein, the lead-in wire bonding that the terminal on the chip 14 is connected to the substrate pad is electrical short each other.In addition, each lead-in wire bonding is long more, and (for example, when sealing lead-in wire) lead-in wire may break more in the mill.
Except these problems, when (as on chip 14) terminal is closely close, limited the quantity that adjacent terminal can be wirebonded to substrate.As shown in fig. 1, because the quantity that the density of bonding is connected with length restriction adjacent legs bonding, so there is the gap of 32 ordinary representations that must be comprised.
Being desirably in provides shorter on the top chip of MCP and has the lead-in wire bonding of littler bonding angle with respect to substrate or other electrical connection.A method is to use redistributes network, but because chip design must comprise specific electrical characteristics, so this method can not be used for the chip of some types, this makes the chip design complexity.
Other method is used interpolater, but this has increased manufacturing cost, and not solution and the terminal at long lead, place, the high elevation angle of relative substrate and the problem that big bonding angle is correlated with fully.
Summary of the invention
A kind of semiconductor device comprises: first semiconductor chip, have the internal circuit zone, and described semiconductor chip comprises: first side; Second side, relative with first side, second side has a plurality of terminals that form thereon, and described a plurality of terminals are electrically connected to first semiconductor chip; At least one lead forms on one of described side, and lead and described terminal and described internal circuit zone electricity are isolated.
A kind of semiconductor device comprises: semiconductor chip has a plurality of chip bonding pads that form on a side of semiconductor chip; At least one conductive pattern forms on a described side, and described pattern and described chip bonding pad be coplane and electricity isolation in fact, and forms described pattern as chip bonding pad during identical deposition and etching step.
A kind of semiconductor packages comprises: substrate; First semiconductor chip is installed in the described substrate; Second semiconductor chip is installed on described first semiconductor chip; A plurality of chip bonding pads form at least one side of second semiconductor chip, to provide and being electrically connected of second semiconductor chip; At least one lead is equipped with thereon on the described side of first semiconductor chip of second semiconductor chip and forms, and described lead is isolated with the circuit electricity in first semiconductor chip that second semiconductor chip is installed; First is electrically connected, and forms between one of described chip bonding pad and lead; Second is electrically connected, and forms between lead and substrate.
A kind of storage card comprises: substrate; Memory chip is installed in the substrate; Controller chip is installed on the described memory chip; A plurality of chip bonding pads form at least one side of controller chip, to provide and being electrically connected of controller chip; At least one lead forms on the described side of the memory chip that controller chip is installed, and described lead and chip bonding pad electricity are isolated; First is electrically connected, and forms between one of described chip bonding pad and lead; Second is electrically connected, and forms between lead and substrate.
A kind of electronic system comprises: substrate; Memory chip is installed in the substrate; Processor chips are installed on the described memory chip; A plurality of chip bonding pads form at least one side of processor chips, to provide and being electrically connected of processor chips; At least one lead forms on the described side of the memory chip that processor chips are installed, and described lead and chip bonding pad electricity are isolated; First is electrically connected, and forms between one of chip bonding pad on the described processor chips and lead; Second is electrically connected, and forms between lead and substrate; Input/output device sends information to described system, and sends out information from described system.
A kind of method of making semiconductor device, described method comprises: form a plurality of terminals on semiconductor chip, described a plurality of terminal electricity are attached to the internal circuit zone; Form at least one lead on semiconductor chip, described lead and described a plurality of terminal and described internal circuit zone electricity are isolated.
A kind of method that forms semiconductor packages comprises: first semiconductor chip is installed in substrate; Second semiconductor chip is installed on first semiconductor chip, second semiconductor chip has a plurality of chip bonding pads of forming to provide and being electrically connected of second semiconductor chip at least one side of second semiconductor chip, and having at least one lead that on a side of first semiconductor chip that second semiconductor chip is installed, forms, the circuit electricity in the described lead and first semiconductor chip is isolated; Forming first between one of chip bonding pad and lead is electrically connected; Forming second between lead and substrate is electrically connected.
The method of described formation semiconductor packages also can may further comprise the steps: come molded substrate, first semiconductor chip and second semiconductor chip with the epoxy mold compound.
Description of drawings
Fig. 1 is the partial enlarged drawing of the MCP of prior art.
Fig. 2 is the vertical view of semiconductor chip constructed according to the invention.
Fig. 3 is the amplification view along the intercepting of the line 3-3 among Fig. 2.
Fig. 4 is by the second embodiment of the present invention of describing with the similar diagrammatic sketch of Fig. 3 and Fig. 4.
Fig. 5 is the vertical view of the third embodiment of the present invention.
Fig. 6 is the vertical view of the fourth embodiment of the present invention.
Fig. 7 is by the fifth embodiment of the present invention of describing with the similar diagrammatic sketch of Fig. 3.
Fig. 8 is the vertical view of the sixth embodiment of the present invention.
Fig. 9 is the perspective diagram of a MCP constructed according to the invention.
Figure 10 is the perspective diagram of the 2nd MCP constructed according to the invention.
Figure 11 is the perspective diagram of the 3rd MCP constructed according to the invention.
Figure 12 is the perspective diagram of the 4th MCP constructed according to the invention.
Figure 13 is the perspective diagram of the 5th MCP constructed according to the invention.
Figure 14 is the cutaway view of fifth embodiment of the invention.
Figure 15 is the perspective diagram of the 6th MCP constructed according to the invention.
Figure 16 is the cutaway view of the sixth embodiment of the present invention.
Figure 17 is the perspective diagram of the 7th MCP constructed according to the invention.
Figure 18 is the schematic top plan view of the 8th MCP constructed according to the invention.
Figure 19 is the schematic diagram of card constructed according to the invention.
Figure 20 is the schematic diagram of system constructed according to the invention.
Embodiment
Referring again to accompanying drawing, Fig. 2 to Fig. 8 is illustrated in the various semiconductor chips at the top that can be placed on another chip among the MCP.Fig. 9 to Figure 18 is illustrated in the semiconductor chip of the chip of describing among Fig. 2 to Fig. 8 comprising among the MCP.
At first with reference to Fig. 2 and Fig. 3,32 ordinary representations be semiconductor device.Device 32 comprises a plurality of leads, for example, and lead 34 and 36.Lead is formed on the surface 38 of dielectric layer 40, and dielectric layer 40 is formed on again at semiconductor-based the end 42.As shown in the figure, lead can form line and the pattern that replaces at interval.Internal circuit zone 44 is formed in the dielectric layer 40.Conductive chip pad (for example, pad 46 and 48) is formed on the dielectric layer 40, and is connected to the internal circuit part (not describing) of semiconductor device 32.Passivation layer 50 is formed on the dielectric layer 40.
Opening (for example, opening 52 and 54) is formed in the passivation layer 50, and opening 52 exposes the part of chip bonding pad 46, the part of opening 54 exposed leads 34.Each chip bonding pad (for example, chip bonding pad 46 and 48) comprises that corresponding opening to expose chip bonding pad, is used for being connected with external circuit.Other opening (for example, opening 54) is to be formed on the mode of more abundant description at least some metal wires here.
Can form chip bonding pad (for example, chip bonding pad 46 and 48) with processing step identical or different steps with the formation of lead (for example line 34 and 36).Lead and chip bonding pad electricity are isolated.Comparable other lead of lead that power supply is provided in MCP or connects over the ground is wide.
In Fig. 4,56 ordinary representations be according to second half conductor chip of the present invention.Do not carry out label or have identical label with the structure corresponding structure of previous sign.In chip 56, lead (for example, lead 34 and 36) is formed on the top of passivation layer 50, rather than as being formed on the top of dielectric layer 40 among Fig. 3.Resin bed 58 is formed on the top of passivation layer 50, and comprises opening (for example opening 60 and 62), to expose the part of chip bonding pad and lead as the opening among Fig. 3 52 mode identical with 54.Resin bed 58 comprises the polymeric layer that comprises polyimides.
In chip 56, can in different planes, form chip bonding pad and lead with different processing steps.In order to increase the lead-in wire bonding efficiency and to prevent during the lead-in wire bonding by the caused difficulty of the difference in height between chip bonding pad and the lead, in further processing step, the height of chip bonding pad (for example chip bonding pad 46) can be extended the level of dotted line 64, thereby makes the upper surface of lead and chip bonding pad be positioned at essentially identical plane.
Can realize the extension of chip bonding pad (for example, chip bonding pad 46) with the same process step that forms lead, thereby make the upper surface of lead and chip bonding pad be positioned at essentially identical plane to the level of dotted line 64.For example, after the opening 52 that forms as shown in Figure 3, cover the conductive layer (not shown) and can be formed on passivation layer 50 and the chip bonding pad 46.Can form the extension (not shown) of lead and chip bonding pad by the tradition design metallization processes that covers conductive layer.Resin bed 58 is formed on the top of passivation layer 50, and comprises opening (for example, the top of opening 62 and opening 60), with Fig. 3 in opening 52 and 54 identical modes expose the extension of chip bonding pad and the part of lead.
In Fig. 5,66 ordinary representations be according to second half conductor chip of the present invention.Do not carry out label or have identical label with the structure corresponding structure of previous sign.In chip 66, lead (for example, lead 34 and 36) is angled with respect to the chip 66 of ordinary rectangular shape.Line 34 and 36 can be with arbitrarily angled layout, and is not to be necessary for linearity (for example, one or more line can be curve) as long as line and the isolation of chip bonding pad (for example, pad 46 and 48) electricity.
In Fig. 6,68 ordinary representations be according to second half conductor chip of the present invention.Do not carry out label or have identical label with the structure corresponding structure of previous sign.In chip 56, lead (for example, lead 34 and 36) is divided into two group 70 and 72, and described group by the interval of 74 ordinary representations separately.As a result, line 34 and 36 is isolated with line 76 and 78 electricity on same straight line respectively.To see, because the line in every group (for example, line 34 and 36) is electrically isolated from one, so this allows these lines to propagate different signals.
In Fig. 7,80 ordinary representations be according to second half conductor chip of the present invention.Do not carry out label or have identical label with the structure corresponding structure of previous sign.In chip 80, although invisible in the connection of Fig. 7 chips pad, the same with chip bonding pad with other several leads, each of at least one in the lead (for example, 82) and chip bonding pad 46 is connected respectively to the silicon through hole (TSV) 83 and 84 of conduction.Each conduction TSV is connected to conductive welding disk (for example, pad 86 and 88).
Form each TSV by dielectric layer 40 and the semiconductor-based ends 42, thereby signal is sent to the conductive welding disk (for example, pad 86 and 88) of the downside of semiconductor chip 80 from metal wire and chip bonding pad.To see that in MCP, this layout is convenient to connect.Also in the embodiment of Fig. 4, use this method.
In Fig. 8,90 ordinary representations be according to second half conductor chip of the present invention.Do not carry out label or have identical label with the structure corresponding structure of previous sign.Semiconductor chip 90 with Fig. 6 in semiconductor chip 68 similar modes arrange lead.Yet chip 90 comprises center dies pad (for example, chip bonding pad 92 and 94).Identical with the chip bonding pad among other embodiment, the chip bonding pad in the chip 90 is connected to chip 90 with the circuit internal electrical.Yet different with other embodiment, each chip bonding pad (for example, chip bonding pad 92 and 94) that is electrically connected on the chip 90 of single corresponding lead is connected respectively to line 76 and 34.Can find out, have the other lead that is not connected with chip bonding pad.Line that this does not connect in addition and inside chip circuit and chip bonding pad electricity are isolated.This layout provides through the lead that is connected to each pad and has redistributed signal on the chip bonding pad, will be described further this in conjunction with Figure 18.
96 ordinary representations among Fig. 9 be MCP.MCP comprises first semiconductor chip 98 and second semiconductor chip 100.Do not carry out label or have identical label with the structure corresponding structure of previous sign.With with Fig. 2 and Fig. 3 in chip 32 similar modes constitute chip 98.By adhesive chip 100 is installed on the chip 98, and still by using adhesive that chip 98 is installed in the substrate 102.First side (invisible) of chip 98 is installed in the substrate 102.Chip 100 is installed on second side 99 of chip 98.
Chip 100 comprises and is shown as the conductive welding disk that is connected to lead 34 by lead-in wire bonding (for example, lead-in wire bonding 104).In the mode shown in Fig. 3 by etching into the part of opening 106 exposed leads 34 in the passivation layer 50.This allows to be electrically connected to lead by the bonding technology bonding 104 that will go between.As a result, by chip bonding pad on the chip 100 and lead-in wire bonding 104 internal circuit on the chip 100 is electrically connected to lead 34.This tie point to the internal circuit of chip 100 is redistributed.
Another opening 108 on the lead 34 is provided to the visit of lead, is used for a terminal of another line 110 is bonded to lead 34.The another terminal of line 110 is bonded to terminal 112 in the substrate 102.As shown in the figure, by the lead-in wire bonding (for example, lead-in wire bonding 104) other terminals on the chip 100 is bonded to other leads, and these other terminals is bonded to terminal such as the terminal in the substrate 102 112 again by lead-in wire bonding (for example, lead-in wire bonding 110).By this way, redistributed the connection of the circuit in the chip 100, so that with the mode of eliminating the problem relevant with the bonding angle bonding that goes between with length, the height of conventional method.By lead-in wire bonding (for example, lead-in wire bonding 116) chip bonding pad on first semiconductor chip 98 or terminal are connected to terminal such as the terminal in the substrate 102 114.Here, just be called electric contact such as the terminal of terminal 114.
This method provides with such lead-in wire bonding and has been electrically connected chip 100 and substrate 102, and described lead-in wire bonding has and the similar length of lead-in wire bonding, height and the bonding angle that the pad on the chip 98 are connected to substrate.
118 ordinary representations among Figure 10 be MCP.MCP comprises first semiconductor chip 120, second semiconductor chip 122 and the 3rd semiconductor chip 124.Do not carry out label or have identical label with the structure corresponding structure of previous sign.Constitute chip 120 similarly with the chip 98 among Fig. 9. Chip 122 and 124 is installed on the chip 120 with the similar mode of mode that in Fig. 9, chip 100 is installed on the chip 98.
Chip 124 comprises to be connected to the pad of metal wire with the similar mode of mode that the pad on the chip 122 is connected to metal wire.For example, on chip 124, lead-in wire bonding 126 is connected to lead 128 with one of pad on the chip 122.By etched opening 132 another lead-in wire bonding 130 is connected to lead 128.The another terminal of lead-in wire bonding 130 is connected to a terminal in the substrate 102.
Because each lead and other each leads and internal semiconductor circuit are isolated, so adjacent wires (for example, line 34 and 128) can be respectively applied for the route that is connected of the pad on the given chip 122 and 124.At MCP 118, each the join dependency every a lead and chip 122 and 124.In other words, if to the lead serial number, then the odd number lead is connected to a bonding pads, and the even number lead is connected to another bonding pads.
134 ordinary representations of Figure 11 be MCP.MCP comprises first semiconductor chip 136 and second semiconductor chip 138.Do not carry out label or have identical label with the structure corresponding structure of previous sign.Constitute chip 136 similarly with the chip 68 among Fig. 6.Chip 138 is installed on the chip 136 with the similar mode of mode that in Fig. 9, chip 100 is installed on the chip 98.
Can find out, the pad on one side of chip 138 is connected to adjacent lines in the line group 70, the pad on the opposite side is connected to adjacent lines in the line group 72 by the lead-in wire bonding by lead-in wire bonding as discussed previously.Be connected to terminal in the substrate 102 successively by another lead-in wire bonding each line that the pad on the chip 138 is connected to.As a result, because the both sides at least of chip 136 can be used as signal path by metal wire group 70 and 72, so can increase pin (that is the quantity of pad) along the edge pad of second chip.
140 ordinary representations among Figure 12 be MCP.MCP comprises first semiconductor chip 142, second semiconductor chip 144 and the 3rd semiconductor chip 146.Do not carry out label or have identical label with the structure corresponding structure of previous sign.Constitute chip 142 similarly with the chip 136 among Figure 11. Chip 142 and 144 is installed on the chip 140 with the previously described similar mode of mode that chip is installed on first semiconductor chip.
In MCP 140, by the lead-in wire bonding pad on the chip 144 is connected to the lead of organizing in 70 in the manner described before, the pad on the chip 146 is connected to the lead of organizing in 72.Still as previously described, by the lead-in wire bonding two groups of leads are connected to terminal in the substrate 102 successively.Provide this method to be used for high density MCP.
148 ordinary representations among Figure 13 be MCP.MCP comprises first semiconductor chip 150 and second semiconductor chip 152.Do not carry out label or have identical label with the structure corresponding structure of previous sign.Constitute chip 150 similarly with the chip 98 among Fig. 9.Use solder bump 154 and 156 (preferably referring to Figure 14) that chip 152 is installed on the chip 150.Solder bump 154 is installed on the chip bonding pad 158 of the internal circuit that is connected to chip 152.But 156 of solder bumps provide support structure to chip 152; Solder bump 156 is free of attachment to any inside chip circuit.The metal wire 34 that transmits any voltage that occurs on the pad 158 supports solder bump 154 and 156.The spacing of the salient point on the chip 152 in fact with chip 150 on the spacing of lead (for example, lead 34) identical.This method be convenient to chip 152 on the use of flip-chip bonding of the bump bonding that forms.As a result, there is not the lead-in wire bonding that is connected to second chip, therefore, eliminated and used the relevant shortcoming of bonding that goes between.
In selectable method (not shown), can in the opening in the passivation layer on the lead 34 of the downside of the chip 152 of passivation layer 50 upper supports, hold conductive salient point 154 fully.This may need than the thicker passivation layer of describing among Figure 14, but because chip placing supports on passivation layer 50 and by passivation layer 50, so do not need to support salient point (for example, salient point 156).
In another selectable method, available towards substrate 102 comprise chip bonding pad active (active) surface first semiconductor chip 150 is installed in the substrate 102.In described structure, go up formation insulating barrier (not shown) in active surperficial facing surfaces (that is the exposed surface at the semiconductor-based end 42) with first semiconductor chip 150.Can on the insulating barrier (not shown), form lead.Can first semiconductor chip 150 be attached to substrate 102 by the flip-chip bonding, can use lead between second semiconductor chip 120 and substrate 102, to form electrical connection.Can second semiconductor chip be connected to lead with any way described herein.
159 ordinary representations among Figure 15 and Figure 16 be MCP.MCP comprises first semiconductor chip 160 and second semiconductor chip 162.Do not carry out label or have identical label with the structure corresponding structure of previous sign.Constitute first semiconductor chip 160 and second semiconductor chip 162 similarly with the chip 80 among Fig. 7, in first semiconductor chip 160 and second semiconductor chip 162 each has conduction TSV (for example, TSV 166 in the chip 160 and the TSV 164 in the chip 162).
The end of TSV 164 is connected to the conductive welding disk 168 that forms on chip 162.Pad 168 is connected to the internal circuit of chip 162.The other end of TSV 164 is connected to the pad of redistributing 170, and described pad 170 is installed in again on the lead 34.Selectively, can not need the pad of redistributing 170 and directly TSV 164 is connected to lead 34.
The upper end of TSV 166 (in chip 160) is connected to the downside of lead 34, the lower end of TSV 166 is connected to the terminal 172 that forms in the substrate 102.As a result, by pad 168, TSV 164, lead 34 and TSV 166 internal circuit in the chip 162 is connected and redistributes to the terminal in the substrate 102 172.This method is without any need for the lead-in wire bonding.In other words, described method does not need any lead-in wire bonding ground that MCP is provided.With adhesive phase 173 first semiconductor chip 160 is secured to substrate 102.
174 ordinary representations among Figure 17 be MCP.MCP comprises first semiconductor chip 176, second semiconductor chip 178 and the 3rd semiconductor chip 180.Do not carry out label or have identical label with the structure corresponding structure of previous sign.Constitute chip 176 and 178 similarly with the chip 98 among Fig. 9. Chip 176 and 178 is essentially the same as each other, and can comprise for example memory chip.Can find out that the mode that is offset each other with the center of chip 176 and 178 is installed in chip 178 on the chip 176.This causes the two edges of the both sides of chip 178 and chip 176 overlapping, and the substantial portion of other both sides of chip 176 is set from the back side of other two edges of chip 176.As a result, can between the terminal of the lead of chip 176 and substrate 102, produce the lead-in wire bonding and connect (for example, lead-in wire bonding 110), also can between the lead on lead on the chip 178 and the chip 176, produce the lead-in wire bonding and connect (bonding 186 for example, goes between).Certainly, preferably, can be to pile up the chip of different sizes than the mode of large chip under less chip.
By using adhesive that chip 180 (can be for example such as the LSI circuit of processor) is installed on the chip 178.By using lead-in wire bonding (for example, lead-in wire bonding 188) that the pad on the chip 180 is connected to lead on the chip 178.As a result, can the circuit of chip 180 inside be connected to lead on the chip 178 by lead-in wire bonding (for example, lead-in wire bonding 188).By lead-in wire bonding (for example, lead-in wire bonding 186) these leads are connected to lead on the chip 176, by lead-in wire bonding (for example, lead-in wire bonding 110) again the lead on the chip 176 be connected to terminal (for example, terminal 112) in the substrate 102.
By lead-in wire bonding (for example, respectively by go between bonding 190 and 192) terminal on chip 176 and 178 is connected to terminal in the substrate 102.In the alternate embodiments (not shown), some that can use TSV (for example, Fig. 7, Figure 15 and the TSV shown in Figure 16) to provide to show as lead-in wire bonding among Figure 17 or even all be connected.
That 194 ordinary representations is MCP among Figure 18.MCP comprises first semiconductor chip 196 and second semiconductor chip 198.Do not carry out label or have identical label with the structure corresponding structure of previous sign.Constitute chip 196 similarly with the chip 90 among Fig. 8.Chip 196 comprises a plurality of conductive chip pads (pad of for example, arranging 200 and 202) on the upper surface of the chip under the chip 198 196.Arrange these pads on the chip 196 under chip 198 in two parallel in fact row, pad 200 is positioned at delegation, and pad 202 is positioned at another row.
To be connected in the pad (for example, pad 200 and 202) one every a lead in group each in 70 and 72.To organize by lead-in wire bonding (for example, respectively by go between bonding 210 and 212) and to be connected to conductive welding disk (for example, pad 206 and 208) on the upper surface of chip 198 every a lead in each in 70 and 72.In other words, each even number lead is connected on the upper surface of chip 196 pad (for example, pad 200 and 202), each odd number lead is connected on the upper surface of chip 198 pad (for example, pad 206 and 208), form being connected of back with lead-in wire bonding (for example, lead-in wire bonding 210 and 212).
Lead-in wire bonding in addition (for example, lead-in wire bonding 214 and 216) connects the line to the terminal (for example, terminal 218 and 220) in the substrate 102 respectively.In the alternate embodiments (not shown), between the row of two on the chip 196 pad, will be installed on the chip 196 than chip 198 little chips.In other words, second chip does not cover the pad on first chip.
Referring now to Figure 19,, 222 ordinary representations be the schematic diagram of the card that constitutes according to the present invention.For example, card 222 can be multimedia card (MMC) or secure digital (SD) card.Card 222 comprises controller 224 and memory 226, and described memory 226 can be the nonvolatile memory of flash memory, PRAM or other types.The communication channel of 228 ordinary representations allows controller that order is offered memory, and sends data to memory 226, and sends out data from memory 226.Controller 224 and memory 226 can comprise the MCP according to previously described embodiment.Card 222 can have the density bigger than traditional type.In the present invention, removable interior interposer chip, thus can reduce card thickness with respect to legacy card with interior interposer chip.In addition, the present invention can reduce by the lead-in wire defective of caused card of breaking, thereby can increase the reliability of card.
Consider now Figure 20,230 ordinary representations be according to system of the present invention.For example, system 230 can be computer system, mobile phone, MP3 player, GPS navigation device, solid-state disk (SSD), household electrical appliances etc.System 230 comprises: processor 232; Memory 234 can be the memory of DRAM, flash memory, PRAM or other types; With input/output device 236.Communication channel 238 allows processor that order is offered memory, by channel 238 data are sent to memory 234 and send out data from memory 234.Can give 230 and send out data and order with data and command transfer by input/output device 236 from system 230.Processor 232 and memory 234 can comprise the MCP according to previously described any embodiment.Because the present invention can reduce by the lead-in wire caused defective of breaking, so the present invention can make stable system.

Claims (51)

1, a kind of semiconductor device comprises:
First semiconductor chip has the internal circuit zone, and described semiconductor chip comprises:
First side;
Second side, relative with first side, second side has a plurality of terminals that form thereon, and described a plurality of terminals are electrically connected to first semiconductor chip;
At least one lead forms on one of described side, and lead and described terminal and described internal circuit zone electricity are isolated.
2, semiconductor device as claimed in claim 1 also comprises:
Insulating barrier covers internal circuit zone and described terminal, and described conductor arrangement is on described insulating barrier.
3, semiconductor device as claimed in claim 2 also comprises:
Passivation layer covers described insulating barrier.
4, semiconductor device as claimed in claim 3 also comprises:
A plurality of openings form in described passivation layer, and described a plurality of openings expose described terminal and described lead.
5, semiconductor device as claimed in claim 3 also comprises:
Resin bed covers described passivation layer, and described terminal is arranged in the described passivation layer, and described conductor arrangement is in described resin bed.
6, semiconductor device as claimed in claim 5 also comprises:
The a plurality of openings that form in described passivation layer, described a plurality of openings expose described terminal and described lead.
7, semiconductor device as claimed in claim 5, wherein, resin bed comprises polyimides.
8, semiconductor device as claimed in claim 1, wherein, the pattern that lead forms line and replaces at interval.
9, semiconductor device as claimed in claim 1 also comprises:
Second semiconductor chip is installed on first semiconductor chip;
Be electrically connected, between lead on second semiconductor chip and terminal, form.
10, semiconductor device as claimed in claim 9 also comprises:
Substrate, described first side is secured to described substrate;
Electric contact forms in described substrate;
Be electrically connected, between lead and electric contact.
11, semiconductor device as claimed in claim 10, wherein, described at least one electrical connection is the lead-in wire bonding.
12, semiconductor device as claimed in claim 10 wherein, forms described lead on second side of first semiconductor chip.
13, semiconductor device as claimed in claim 10 wherein, forms described lead on first side of first semiconductor chip.
14, semiconductor device as claimed in claim 1, wherein, described semiconductor also is included in one of described side and goes up a plurality of leads that form.
15, semiconductor device as claimed in claim 14, wherein, described a plurality of leads form two groups of parallel in fact conductors that separate.
16, a kind of semiconductor device comprises:
Semiconductor chip has a plurality of chip bonding pads that form on a side of semiconductor chip;
At least one conductive pattern forms on a described side, and described pattern and described chip bonding pad be coplane and electricity isolation in fact, and forms described pattern as chip bonding pad during identical deposition and etching step.
17, semiconductor device as claimed in claim 16 also comprises:
The non-conducting material layer forms on the semiconductor chip on the described side;
A plurality of openings in non-conducting material, form on chip bonding pad;
Pair of openings forms on conductive pattern.
18, semiconductor device as claimed in claim 16, wherein, described conductive pattern comprises a plurality of parallel in fact lines.
19, semiconductor device as claimed in claim 18, wherein, described conductive pattern comprises two groups of parallel in fact lines that separate in fact.
20, a kind of semiconductor packages comprises:
Substrate;
First semiconductor chip is installed in the described substrate;
Second semiconductor chip is installed on described first semiconductor chip;
A plurality of chip bonding pads form at least one side of second semiconductor chip, to provide and being electrically connected of second semiconductor chip;
At least one lead is equipped with thereon on the described side of first semiconductor chip of second semiconductor chip and forms, and described lead is isolated with the circuit electricity in first semiconductor chip that second semiconductor chip is installed;
First is electrically connected, and forms between one of described chip bonding pad and lead;
Second is electrically connected, and forms between lead and substrate.
21, semiconductor packages as claimed in claim 20, wherein, second semiconductor chip has the side adjacent with first semiconductor chip, and forms chip bonding pad on described second semiconductor chip.
22, semiconductor packages as claimed in claim 20, wherein, second semiconductor chip has away from first side of first semiconductor chip and second side adjacent with first semiconductor chip, forms described chip bonding pad on first side.
23, semiconductor packages as claimed in claim 20, wherein, at least one during first electrical connection and second is electrically connected is the lead-in wire bonding.
24, semiconductor packages as claimed in claim 20, wherein, first electrical connection is included in the solder bump that forms between one of described chip bonding pad and the lead.
25, semiconductor packages as claimed in claim 24 also comprises: second solder bump, between second semiconductor chip and first semiconductor chip, form, and the circuit electricity in second solder bump and first semiconductor chip and second semiconductor chip is isolated.
26, semiconductor packages as claimed in claim 20, wherein, at least one in the described electrical connection comprises the silicon through hole.
27, semiconductor packages as claimed in claim 20, wherein, first electrical connection comprises solder bump, second electrical connection comprises the silicon through hole.
28, semiconductor packages as claimed in claim 20, wherein, semiconductor packages also comprises: a plurality of leads that form on the side of first semiconductor chip that second semiconductor chip is installed.
29, semiconductor packages as claimed in claim 28, wherein, at least one in the lead do not have and being electrically connected of substrate.
30, a kind of storage card comprises:
Substrate;
Memory chip is installed in the substrate;
Controller chip is installed on the described memory chip;
A plurality of chip bonding pads form at least one side of controller chip, to provide and being electrically connected of controller chip;
At least one lead forms on the described side of the memory chip that controller chip is installed, and described lead and chip bonding pad electricity are isolated;
First is electrically connected, and forms between one of described chip bonding pad and lead;
Second is electrically connected, and forms between lead and substrate.
31, a kind of electronic system comprises:
Substrate;
Memory chip is installed in the substrate;
Processor chips are installed on the described memory chip;
A plurality of chip bonding pads form at least one side of processor chips, to provide and being electrically connected of processor chips;
At least one lead forms on the described side of the memory chip that processor chips are installed, and described lead and chip bonding pad electricity are isolated;
First is electrically connected, and forms between one of chip bonding pad on the described processor chips and lead;
Second is electrically connected, and forms between lead and substrate;
Input/output device sends information to described system, and sends out information from described system.
32, a kind of method of making semiconductor device, described method comprises:
Form a plurality of terminals on semiconductor chip, described a plurality of terminal electricity are attached to the internal circuit zone;
Form at least one lead on semiconductor chip, described lead and described a plurality of terminal and described internal circuit zone electricity are isolated.
33, method as claimed in claim 32, further comprising the steps of:
On semiconductor chip, form insulating barrier, arrange terminal and lead on the described insulating barrier.
34, method as claimed in claim 33, further comprising the steps of:
On described insulating barrier, form passivation layer.
35, method as claimed in claim 34, wherein, the step that forms terminal and at least one lead of formation comprises:
On insulating barrier, arrange conductive layer;
With conductive layer patternization, with formation terminal and lead,
Wherein, in identical patterned process, form described terminal and lead,
Passivation layer covers described terminal and lead.
36, method as claimed in claim 35, further comprising the steps of:
In passivation layer, form a plurality of openings, with exposed terminal and lead.
37, method as claimed in claim 34, wherein, the step that forms terminal and formation lead comprises:
On insulating barrier, arrange first conductive layer;
Patterning first conductive layer is to form terminal;
On insulating barrier and terminal, arrange passivation layer;
On passivation layer, arrange second conductive layer;
Patterning second conductive layer is to form lead;
On lead, arrange resin bed.
38, method as claimed in claim 37, further comprising the steps of:
Before arranging second conductive layer, form a plurality of openings, with the part of exposed terminal.
39, method as claimed in claim 37, further comprising the steps of:
In resin, form a plurality of openings, with exposed terminal and lead.
40, method as claimed in claim 32, wherein, semiconductor chip comprises first semiconductor chip, described method is further comprising the steps of:
Second semiconductor chip is installed on first semiconductor chip;
Between lead on second semiconductor chip and terminal, form and be electrically connected.
41, a kind of method that forms semiconductor packages comprises:
First semiconductor chip is installed in substrate;
Second semiconductor chip is installed on first semiconductor chip, second semiconductor chip has a plurality of chip bonding pads of forming to provide and being electrically connected of second semiconductor chip at least one side of second semiconductor chip, and having at least one lead that on a side of first semiconductor chip that second semiconductor chip is installed, forms, the circuit electricity in the described lead and first semiconductor chip is isolated;
Forming first between one of chip bonding pad and lead is electrically connected;
Forming second between lead and substrate is electrically connected.
42, method as claimed in claim 41, further comprising the steps of:
Come molded substrate, first semiconductor chip and second semiconductor chip with the epoxy mold compound.
43, method as claimed in claim 41, wherein, second semiconductor chip has the side adjacent with first semiconductor chip, and forms chip bonding pad on described side.
44, semiconductor packages as claimed in claim 41, wherein, second semiconductor chip has first side that deviates from first semiconductor chip and second side adjacent with first semiconductor chip, forms chip bonding pad on first side.
45, semiconductor packages as claimed in claim 41, wherein, at least one during first electrical connection and second is electrically connected is the lead-in wire bonding.
46, semiconductor packages as claimed in claim 41, wherein, first electrical connection is included in the solder bump that forms between one of described chip bonding pad and the lead.
47, semiconductor packages as claimed in claim 46, further comprising the steps of: form second solder bump between second semiconductor chip and first semiconductor chip, the circuit electricity in second solder bump and first semiconductor chip and second semiconductor chip is isolated.
48, semiconductor device as claimed in claim 41, wherein, at least one in the described electrical connection comprises the silicon through hole.
49, semiconductor device as claimed in claim 41, wherein, first electrical connection comprises solder bump, second electrical connection comprises the silicon through hole.
50, semiconductor device as claimed in claim 41, wherein, semiconductor packages also comprises: a plurality of leads that form on the side of first semiconductor chip that second semiconductor chip is installed.
51, semiconductor device as claimed in claim 50, wherein, at least one in the lead do not have and being electrically connected of substrate.
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