CN101346858B - Surface-emission laser array, optical scanning apparatus and image forming apparatus - Google Patents
Surface-emission laser array, optical scanning apparatus and image forming apparatus Download PDFInfo
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/435—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of radiation to a printing material or impression-transfer material
- B41J2/447—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of radiation to a printing material or impression-transfer material using arrays of radiation sources
- B41J2/45—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of radiation to a printing material or impression-transfer material using arrays of radiation sources using light-emitting diode [LED] or laser arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/435—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of radiation to a printing material or impression-transfer material
- B41J2/44—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of radiation to a printing material or impression-transfer material using single radiation source per colour, e.g. lighting beams or shutter arrangements
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/435—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of radiation to a printing material or impression-transfer material
- B41J2/47—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of radiation to a printing material or impression-transfer material using the combination of scanning and modulation of light
- B41J2/471—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of radiation to a printing material or impression-transfer material using the combination of scanning and modulation of light using dot sequential main scanning by means of a light deflector, e.g. a rotating polygonal mirror
- B41J2/473—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of radiation to a printing material or impression-transfer material using the combination of scanning and modulation of light using dot sequential main scanning by means of a light deflector, e.g. a rotating polygonal mirror using multiple light beams, wavelengths or colours
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/42—Arrays of surface emitting lasers
- H01S5/423—Arrays of surface emitting lasers having a vertical cavity
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
- G02B26/10—Scanning systems
- G02B26/12—Scanning systems using multifaceted mirrors
- G02B26/123—Multibeam scanners, e.g. using multiple light sources or beam splitters
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
- H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18358—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] containing spacer layers to adjust the phase of the light wave in the cavity
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
- H01S5/3432—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs the whole junction comprising only (AI)GaAs
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- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
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- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
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- General Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Biophysics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Facsimile Scanning Arrangements (AREA)
- Mechanical Optical Scanning Systems (AREA)
- Semiconductor Lasers (AREA)
- Facsimile Heads (AREA)
- Laser Beam Printer (AREA)
Abstract
A surface-emission laser array comprises a plurality of surface-emission laser diode elements arranged in the form of a two-dimensional array, wherein a plurality of straight lines drawn perpendicularly to a straight line extending in a first direction from respective centers of the plurality of surface emission laser diode elements aligned in a second direction perpendicular to the first direction, are formed with generally equal interval in the first direction, the plurality of surface-emission laser diode elements are aligned in the first direction with an interval set to a reference value, and wherein the number of the surface-emission laser diode elements aligned in the first direction is smaller than the number of the surface-emission laser diode elements aligned in the second direction.
Description
Technical field
The present invention relates generally to surface-emission laser array, optical scanner and imaging device, more particularly, relate to the surface-emission laser array in it with multiple luminescent layer elements, adopt the optical scanner of this surface-emission laser array and adopt the imaging device of this optical scanner.
Background technology
In existing electrophotography, adopt the formation method of laser beam to be widely used as the formation method of the recording image that can realize fine picture quality.In electrophotography, by when the rotation direction of photosensitive drums is rotated this photosensitive drums, use polygon prism to make laser beam form sub-image along axially scan (subscan of laser beam) of photosensitive drums in this photosensitive drums.
In the technical field of this electrophotography, constantly need higher resolution and the output speed of Geng Gao.In the situation that image resolution ratio increases twice, in main scanning process and subscan process, each duration need to become the imaging process of the conventional resolution twice of required duration, thereby the duration of high-resolution imaging process need to become four times of duration in traditional imaging process situation.Therefore,, for realizing high-resolution imaging process, need to realize the high speed output of image simultaneously.
For realizing this high speed imaging, what can expect is to adopt high laser beam output, multiple laser beam structure, high sensitive photoreceptor etc.Therefore, the common practices of existing high-speed imaging device is to adopt a kind of light source that writes that produces multiple laser beams.Adopt the method, in the time using n laser beam, sub-image formation region becomes n times of the conventional situation that adopts single laser beam simultaneously.Correspondingly, can be 1/n time shorten required imaging.
For example, there is a kind of motion of the multi-beam laser diode (references 1 and 2) on one single chip with multiple light sources.But these conventional construction adopt the edge-lit laser diode that is configured to one-dimensional array, therefore have the shortcoming that power consumption is large, power consumption needs greatly again to adopt cooling system.From actual cost viewpoint, the system of four light beams or eight light beams is considered to the limit of the method.In addition, in the time that the quantity of laser beam increases, this laser beam tends to increase with respect to the skew of the optical axis of the optical element of formation optical system, causes optical characteristics deteriorated.
On the other hand, surface light emitting laser diode is a kind of transmitting and the semi-conductor laser equipment of the perpendicular light of substrate, and have be easy to integrated to form the favorable characteristics of two-dimensional array.In addition, compared with edge-lit formula laser diode, surface light emitting laser diode has the little favorable characteristics of power consumption, and its power consumption is than little ten times of edge-lit laser diodes.Therefore,, when integrated a large amount of light sources are to form when two-dimensional array, adopt surface light emitting laser diode to be considered to favourable.
For example, have a kind of known surface-emission laser array that writes optical system that is designed for, it comprises is arranged to 32 surface light emitting laser diode elements that eight row four are listed as and adopts polygon prism to make laser beam flying (non-references 1).
Adopt this surface-emission laser array, eight surface light emitting laser diode elements are arranged along sub scanning direction, and four surface light emitting laser diode elements are arranged along main scanning direction.Therefore, specify being spaced apart " d " and specifying be spaced apart " x " between each phase adjacency pair of four surface light emitting laser diodes arranging along main scanning direction (drum longitudinally) between each phase adjacency pair of eight surface light emitting laser diodes arranging along sub scanning direction (drum rotation direction), 32 surface light emitting laser diode elements are configured such that four center separately of four surface light emitting laser diode elements from arranging along main scanning direction become and equate and value d/4 perpendicular to the interval between four straight lines of the straight line drafting of extending along sub scanning direction, and (d < x) to make d be less than x.
Thus, realizing density is that the high density of 2400dpi (point/inch) writes.In addition, in the case of not adopting polygon prism to carry out main scanning and light source arrange one to one as the situation of the LED described in references 2 (light-emitting diode) printer, main scanning direction and sub scanning direction exchange.
In addition, for example, have a kind of known surface-emission laser array that writes optical system that is designed for, it comprises is arranged to 36 surface light emitting laser diode elements that six row six are listed as and adopts polygon prism to make laser beam flying (references 4 and 5).
Adopt this surface-emission laser array, six surface light emitting laser diode elements are arranged along sub scanning direction, and six surface light emitting laser diode elements are arranged along main scanning direction.Therefore, specify being spaced apart " d " and specifying be spaced apart " x " between each phase adjacency pair of six surface light emitting laser diodes arranging along main scanning direction (drum longitudinally) between each phase adjacency pair of six surface light emitting laser diodes arranging along sub scanning direction (drum rotation direction), 36 surface light emitting laser diode elements are configured such that six center separately of six surface light emitting laser diode elements from arranging along main scanning direction become and equate and value d/6 perpendicular to the interval between six straight lines of the straight line drafting of extending along sub scanning direction.
Thus, in the case of adopting single collimating lens to concentrate from 36 laser beams of 36 surface light emitting laser diode elements transmitting of such setting, preferably, all laser beams concentrate near the optical axis of this collimating lens to avoid the aberration of lens.Therefore preferably, the surface light emitting laser diode element of the surface-emission laser array of formation two-dimensional array shape is with high as far as possible integration density setting.Consider aforementioned need, have a kind of motion (references 6) of the density that increases multiple surface light emitting laser diode elements.In references 6, multiple surface light emitting laser diode elements arrange with constant interval mutually.
References 1
Japanese Patent Application Laid-Open 11-340570
References 2
Japanese Patent Application Laid-Open 11-354888
References 3
United States Patent (USP) 5848087
References 4
Japanese Patent Application Laid-Open 2005-274755
References 5
Japanese Patent Application Laid-Open 2005-234510
References 6
Japanese Patent Application Laid-Open 2001-272615
Non-references 1
IEICE Institution of Electronics meeting 2004, CS-3-4
Summary of the invention
In the time that employing utilizes polygon prism to make writing optical system and carrying out high density recording of beam flying, it should be noted, the packing density of sub scanning direction is by the multiplying power of this optical system and definite along the interval between the surface light emitting laser diode element of sub scanning direction, and this interval is restricted to the interval between the straight line of drawing perpendicular to the straight line extending along sub scanning direction from the center separately of surface light emitting laser element.
But, the restriction causing due to the size of surface light emitting laser diode element and the restriction of guaranteeing to make this surface light emitting laser diode element space that electricity isolation separates with space mutually and providing the space of interconnection pattern to cause for this surface light emitting laser diode element due to needs, reduce to be restricted along the interval between the surface light emitting laser diode element of sub scanning direction.
In addition, in the time that multiple surface light emitting laser diode elements are integrated with high density of integration, due to the heat of this surface light emitting laser diode element generation, there is the adjacent surface light emitting laser diode element problem that heat is interfered mutually, and correspondingly, there is the variety of issue that for example power output reduces or reliability reduces.
Because multiple surface light emitting laser diode elements are arranged to two-dimensional array in this surface-emission laser array, so the laser diode of this portion of array center tends to be subject to having a strong impact on of other laser diode in array, so the decline that the surface light emitting laser diode element of portion of array center tends to show the power output causing due to intensification.Therefore,, even if the surface light emitting laser diode element in array operates under the condition that should obtain homogeneous Laser output in the time that laser diode operates separately, also exist Laser output to become inhomogenous situation in this surface-emission laser array inside.In addition, consider that its life-span becomes shorter this fact in the time that surface light emitting laser diode element operates under higher temperature, the life-span of surface-emission laser array being determined by the life-span of laser diode that is located at central portion inevitably shortens.
The present invention considers that foregoing problems makes, and the object of this invention is to provide between a kind of surface light emitting laser diode element reducing in it along the surface-emission laser array at the interval of first direction, be restricted to the interval between the straight line of drawing in another straight line extending along this first direction from the central vertical separately of each surface light emitting laser diode element along the interval of first direction.
Another object of the present invention is to provide a kind of optical scanner that adopts surface-emission laser array, between the surface light emitting laser diode element that this surface-emission laser array can reduce to adopt in it, along the interval of first direction, be restricted to the interval between the straight line of drawing in another straight line extending along this first direction from the central vertical separately of each surface light emitting laser diode element along the interval of first direction.
Another object of the present invention is to provide a kind of imaging device that adopts surface-emission laser array, between the surface light emitting laser diode element that this surface-emission laser array can reduce to adopt in it, along the interval of first direction, be restricted to the interval between the straight line of drawing in another straight line extending along this first direction from the central vertical separately of each surface light emitting laser diode element along the interval of first direction.
Another object of the present invention is to provide so a kind of surface-emission laser array, be simultaneously operated even if form multiple surface light emitting laser diode elements of this surface-emission laser array, this surface-emission laser array also can make multiple surface light emitting laser diode elements have the output of homogeneous.
Another object of the present invention is to provide long surface-emission laser array of a kind of life-span.
Another object of the present invention is to provide a kind of optical scanner with surface-emission laser array, even if multiple surface light emitting laser diode elements are simultaneously operated, multiple surface light emitting laser diode elements that this surface-emission laser array also can make to form this surface-emission laser array have the output of homogeneous.
Another object of the present invention is to provide a kind of optical scanner with long-life surface-emission laser array.
Another object of the present invention is to provide a kind of imaging device with surface-emission laser array, even if multiple surface light emitting laser diode elements are simultaneously operated, multiple surface light emitting laser diode elements that this surface-emission laser array also can make to form this surface-emission laser array have the output of homogeneous.
Another object of the present invention is to provide a kind of imaging device with long-life surface-emission laser array.
In one aspect, the invention provides a kind of surface-emission laser array, wherein, multiple surface light emitting laser diode elements are with two-dimensional array form setting.Therefore, be formed along this first direction and there is roughly equal interval perpendicular to many straight lines of drawing along the straight line extending with the vertical first direction of this second direction from the center separately of the multiple surface light emitting laser diode elements along second direction arrangement.In addition, multiple surface light emitting laser diode elements along first direction to be set to being spaced of fiducial value.The quantity of the surface light emitting laser diode element of arranging along first direction is less than the quantity of the surface light emitting laser diode element of arranging along second direction.
On the other hand, the invention provides a kind of surface-emission laser array, wherein, multiple surface light emitting laser diode elements are with two-dimensional array form setting.Therefore, be formed along this first direction and there is roughly equal interval perpendicular to many straight lines of drawing along the straight line extending with the vertical first direction of this second direction from the center separately of the multiple surface light emitting laser diode elements along second direction arrangement.In addition, the surface light emitting laser diode element of arranging along first direction arranges with the first interval along this first direction; The surface light emitting laser diode element of arranging along second direction arranges with the second interval along this second direction, and this first interval is less than the second interval.The quantity of the surface light emitting laser diode element of arranging along first direction is equal to or less than the quantity of the surface light emitting laser diode element of arranging along second direction.
Preferably, the quantity of the surface light emitting laser diode element of arranging along second direction changes along first direction, and the quantity of the surface light emitting laser diode element of arranging along first direction changes along second direction.
On the other hand, the invention provides the surface-emission laser array that one comprises m × n surface light emitting laser diode element.The individual surface light emitting laser diode element of m (m is equal to or greater than 2 integer) in m × n surface light emitting laser diode element is arranged along first direction, and the individual surface light emitting laser diode element of n (n is equal to or greater than 2 integer) in m × n surface light emitting laser diode element is arranged along the second direction perpendicular to this first direction.The n bar straight line of drawing perpendicular to the straight line extending along first direction from the center separately of n surface light emitting laser diode element is formed along this first direction has roughly equal interval.In addition, keep being related to d < x and m≤n, the interval of m the surface light emitting laser diode element of arranging along first direction in this d representative, and x representative is along the interval of n surface light emitting laser diode element of second direction arrangement.
On the other hand, the invention provides a kind of surface-emission laser array, wherein, multiple surface light emitting laser diode elements are with two-dimensional array form setting.Therefore, be formed along this first direction and there is roughly equal interval perpendicular to many straight lines of drawing along the straight line extending with the vertical first direction of this second direction from the center separately of the multiple surface light emitting laser diode elements along second direction arrangement.In addition, at least one interconnection pattern being connected with at least one the surface light emitting laser diode element being located in the plurality of surface light emitting laser diode element between surface light emitting laser diode element and another surface light emitting laser diode element of opposite side of a side is located between the surface light emitting laser diode element of arranging along second direction.
Preferably, multiple surface light emitting laser diode elements comprise m × n surface light emitting laser diode element, wherein, the individual surface light emitting laser diode element of m (m is equal to or greater than 2 integer) is arranged along first direction, and the individual surface light emitting laser diode element of n (n is equal to or greater than 2 integer) is arranged along the second direction perpendicular to this first direction.In addition, keep being related to d < x and m≤n, the interval of m the surface light emitting laser diode element of arranging along first direction in this d representative, and x representative is along the interval of n surface light emitting laser diode element of second direction arrangement.
Preferably, multiple surface light emitting laser diode elements are arranged in zigzag pattern along first direction.
Preferably, surface-emission laser array forms optical scanner, and wherein, first direction is that sub scanning direction and the second direction of optical scanner is its main scanning direction.
In another aspect, the invention provides a kind of optical scanner, it comprises foregoing surface-emission laser array, deflection from the deflector of multiple laser beams of this surface-emission laser array transmitting and the light beam that utilizes this deflector is guided to the scanning optical element of scanning plane.
Preferably, maintenance relation | β m| > | β s|, at this, β m represents the lateral magnification along main scanning direction between surface-emission laser array and scanning plane, β s representative is along the lateral magnification of sub scanning direction.
In addition, the invention provides using foregoing surface-emission laser array as the imaging device that writes light source.
In addition, the invention provides the imaging device with foregoing optical scanner.
According to this surface-emission laser array, multiple surface light emitting laser diode elements arrange along first direction and second direction two dimension, wherein, the surface light emitting laser diode element of arranging along first direction arranges with the interval that is set to fiducial value, and the quantity of the surface light emitting laser diode element of wherein, arranging along first direction is less than the quantity of the surface light emitting laser diode element of arranging along second direction.
Therefore, according to the present invention, interval along first direction between surface light emitting laser diode element can reduce, and is restricted to the center separately of the surface light emitting laser diode element from forming this surface-emission laser array perpendicular to the interval of the straight line of the straight line drafting of extending along first direction between this surface light emitting laser diode element along the interval of first direction.
In addition, according to surface-emission laser array of the present invention, multiple surface light emitting laser diode elements arrange along first direction and second direction two dimension, wherein, interval between the surface light emitting laser diode element of arranging along first direction is set to be less than the interval of the surface light emitting laser diode element of arranging along second direction, and the quantity of the surface light emitting laser diode element of wherein, arranging along first direction is equal to or less than the quantity of the surface light emitting laser diode element of arranging along second direction.
Therefore, according to the present invention, interval along first direction between surface light emitting laser diode element can reduce, and is restricted to the center separately of the surface light emitting laser diode element from forming this surface-emission laser array perpendicular to the interval of the straight line of the straight line drafting of extending along first direction between this surface light emitting laser diode element along the interval of first direction.
In addition, for surface-emission laser array of the present invention, multiple surface light emitting laser diode elements arrange along first direction and second direction two dimension, and at least one interconnection pattern being connected with at least one the surface light emitting laser diode element being located in multiple surface light emitting laser diode elements between a surface light emitting laser diode element of a side and the another side light emitting laser diode element of opposite side is located between a pair of surface light emitting laser diode element of arranging along second direction.Therefore, for the present invention, interconnection pattern is not located between the surface light emitting laser diode element of arranging along first direction, and is only located between the surface light emitting laser diode element of arranging along second direction.
Thus, according to the present invention, interval along first direction between surface light emitting laser diode element can reduce, and is restricted to the center separately of the surface light emitting laser diode element from forming this surface-emission laser array perpendicular to the interval of the straight line of the straight line drafting of extending along first direction between this surface light emitting laser diode element along the interval of first direction.
On the other hand, the invention provides a kind of surface-emission laser array that comprises multiple surface light emitting laser diode elements, the plurality of surface light emitting laser diode element is arranged by two dimension, make the center separately of the multiple surface light emitting laser diode elements from arranging along second direction be formed and there is roughly equal interval perpendicular to many straight lines of drawing along the straight line extending with the vertical first direction of this second direction, and wherein, multiple surface light emitting laser diode elements of arranging along the either direction of the first and second directions arrange with so a kind of interval, , this interval is set at the central part ratio of surface-emission laser array large at the periphery of surface-emission laser array.
In this manual, the interval between surface light emitting laser diode element is restricted to the distance between the center of lighting at two sides laser diode.
Preferably, the interval between the surface light emitting laser diode element of arranging along first direction is set at the central part ratio of surface-emission laser array large at the periphery of surface-emission laser array.
Preferably, along interval between multiple surface light emitting laser diode elements of first direction according to the position in array and difference along this first direction.
Preferably, the interval between the surface light emitting laser diode element of arranging along second direction is set at the central part ratio of surface-emission laser array large at the periphery of surface-emission laser array.
Preferably, along interval between multiple surface light emitting laser diode elements of second direction according to the position in array difference.
Preferably, the central part that the surface light emitting laser diode element of arranging along first direction is formed in surface-emission laser array has larger interval than at periphery, and the central part that the surface light emitting laser diode element of arranging along second direction is formed in surface-emission laser array is than having larger interval at periphery.
Preferably, the surface light emitting laser diode element of arranging along first direction is according to the position in array and change interval along this first direction, and the surface light emitting laser diode element of arranging along second direction is according to the position in array and change interval along this second direction.
Preferably, between each adjacent two of being located in the surface light emitting laser diode element of arranging along second direction in the adjacent second place of same this primary importance of first direction in multiple surface light emitting laser diode elements of arranging along second direction in the primary importance of first direction.
Preferably, this surface-emission laser array forms optical scanner, and wherein, first direction is that sub scanning direction and the second direction of optical scanner is its main scanning direction.
On the other hand, the invention provides a kind of surface-emission laser array of the multiple surface light emitting laser diode elements that comprise two-dimensional arrangements, wherein, multiple row surface light emitting laser diode element is provided, in every row, comprise at least two surface light emitting laser diode elements along first direction, make these surface light emitting laser diode element row along being arranged to multiple perpendicular to the second direction of this first direction, multiple surface light emitting laser diode elements arrange with the interval equating along first direction, multiple row surface light emitting laser diode element is configured such that the interval between two adjacent columns is large at periphery along the central part ratio of second direction at multiple row surface light emitting laser diode element, columns is greater than the number of the surface light emitting laser diode element comprising in row.
On the other hand, the invention provides a kind of surface-emission laser array of the multiple surface light emitting laser diode elements that comprise two-dimensional arrangements, these surface light emitting laser diode elements are the density setting with the periphery lower than this surface-emission laser array at the central part of surface-emission laser array.
On the other hand, the invention provides a kind of optical scanner that utilizes beam flying surface, wherein, this optical scanner comprises that light source cell, the deflection in it with surface-emission laser array of the present invention as above gather lip-deep scanning optics from the deflector of the light beam of this light source cell and the light beam that utilizes this deflector.
On the other hand, the invention provides a kind of imaging device, this imaging device comprise at least one image-carrier and multiple beam flyings of carry image information to the optical scanner of the present invention on this at least one image-carrier.
On the other hand, the invention provides using surface-emission laser array of the present invention as the imaging device that writes light source.
According to the present invention, the surface light emitting laser diode element that occupies the central part of surface-emission laser array arranges with larger interval than the surface light emitting laser diode element of the periphery that is located at this surface-emission laser array.Result, even if multiple surface light emitting laser diode elements are driven simultaneously, the thermal impact to the surface light emitting laser diode element in central part being produced by the surface light emitting laser diode element being located in the periphery of surface-emission laser array also reduces, and with compare with the situation that sub scanning direction arranges multiple surface light emitting laser diode elements with the interval of homogeneous along main scanning direction, the intensification that is positioned at the surface light emitting laser diode element of surface-emission laser array central part is suppressed.
As a result, according to the present invention, can make the output characteristic homogeneous of the surface light emitting laser diode element of forming surface emission laser array.In addition, because the temperature of the surface light emitting laser diode element that experiences steep temperature rise in surface-emission laser array reduces, can extend the life-span of this surface-emission laser array.
Brief description of the drawings
Fig. 1 is according to the vertical view of the surface-emission laser array of the embodiment of the present invention 1;
Fig. 2 is the schematic sectional view of the diode element of surface light emitting laser shown in Fig. 1;
Fig. 3 is near the cutaway view of the part of the active layer of surface light emitting laser diode element shown in presentation graphs 2;
Fig. 4 A-4H is the diagram of the manufacture process of surface-emission laser array shown in presentation graphs 1;
Fig. 5 is another schematic sectional view of the diode element of surface light emitting laser shown in Fig. 1;
Fig. 6 is near the cutaway view of the part of the active layer of surface light emitting laser diode element shown in presentation graphs 5;
Fig. 7 is another vertical view according to the surface-emission laser array of the embodiment of the present invention 1;
Fig. 8 is another vertical view according to the surface-emission laser array of the embodiment of the present invention 1;
Fig. 9 is another vertical view according to the surface-emission laser array of the embodiment of the present invention 1;
Figure 10 is another vertical view according to the surface-emission laser array of the embodiment of the present invention 1;
Figure 11 is another vertical view according to the surface-emission laser array of the embodiment of the present invention 1;
Figure 12 is another vertical view according to the surface-emission laser array of the embodiment of the present invention 1;
Figure 13 is according to the vertical view of the surface-emission laser array of the embodiment of the present invention 2;
Figure 14 is another vertical view according to the surface-emission laser array of the embodiment of the present invention 2;
Figure 15 is another vertical view according to the surface-emission laser array of the embodiment of the present invention 2;
Figure 16 is another vertical view according to the surface-emission laser array of the embodiment of the present invention 2;
Figure 17 is another vertical view according to the surface-emission laser array of the embodiment of the present invention 2;
Figure 18 is another vertical view according to the surface-emission laser array of the embodiment of the present invention 2;
Figure 19 is the diagram that describes the interconnection pattern layout of surface light emitting laser diode array of the present invention in detail;
Figure 20 A-20C is the diagram that describes the interconnection pattern layout of surface light emitting laser diode array of the present invention in detail;
Figure 21 A and 21B are the diagrams that describes the interconnection pattern layout of surface light emitting laser diode array of the present invention in detail;
Figure 22 A and 22B are the diagrams that describes the interconnection pattern layout of surface light emitting laser diode array of the present invention in detail;
Figure 23 is the schematic diagram that represents to adopt the structure of the optical scanner of surface-emission laser array shown in Fig. 8;
Figure 24 is the schematic diagram that represents laser printer;
Figure 25 is the schematic diagram of imaging device;
Figure 26 is according to the vertical view of the surface-emission laser array of the embodiment of the present invention 3;
Figure 27 is according to the vertical view of the surface-emission laser array of the embodiment of the present invention 4;
Figure 28 is another vertical view according to the surface-emission laser array of the embodiment of the present invention 4;
Figure 29 is according to the vertical view of the surface-emission laser array of the embodiment of the present invention 5;
Figure 30 is another vertical view according to the surface-emission laser array of the embodiment of the present invention 5;
Figure 31 is according to the vertical view of the surface-emission laser array of the embodiment of the present invention 6;
Figure 32 is according to the vertical view of the surface-emission laser array of the embodiment of the present invention 7;
Figure 33 is according to the vertical view of the surface-emission laser array of the embodiment of the present invention 8;
Figure 34 is another vertical view according to the surface-emission laser array of the embodiment of the present invention 8;
Figure 35 is another vertical view according to the surface-emission laser array of the embodiment of the present invention 8;
Figure 36 is according to the vertical view of the surface-emission laser array of the embodiment of the present invention 9;
Figure 37 is the diagram for simulation surface-emission laser array (conventional case) is described;
Figure 38 is the diagram of the analog result for surface-emission laser array shown in Figure 37 is described;
Figure 39 is the first diagram for simulation surface-emission laser array is described;
Figure 40 is the diagram of the analog result for surface-emission laser array shown in Figure 39 is described;
Figure 41 is the second diagram for simulation surface-emission laser array is described;
Figure 42 is the diagram of the analog result for surface-emission laser array shown in Figure 41 is described;
Figure 43 is for illustrating according to the diagram of the signal structure of the laser printer of the embodiment of the present invention;
Figure 44 is the schematic diagram that represents optical scanner shown in Figure 43;
Figure 45 is the diagram of the exemplary configuration for the colored machine of tandem is described.
Embodiment
Below, embodiments of the invention are described with reference to the accompanying drawings.In the accompanying drawings, those corresponding parts are indicated by same reference numbers, and will not repeat their description.In this manual, it should be noted, " interval " represents the distance between center separately of two surface light emitting laser diode elements.
[embodiment 1]
Fig. 1 is according to the vertical view of the surface-emission laser array of the embodiment of the present invention 1.
With reference to Fig. 1, the surface-emission laser array 100 of embodiment 1 comprises surface light emitting laser diode element 1-36.
The array format two dimension that surface light emitting laser element 1-36 is listed as with six row six arranges.Therefore, six surface light emitting laser diode elements 1,7,13,19,25 and 31, or 2,8,14,20,26 and 32, or 3,9,15,21,27 and 33, or 4,10,16,22,28 and 34, or 5,11,17,23,29 and 35, or 6,12,18,24,30 and 36 arrange along sub scanning direction, simultaneously six surface light emitting laser diode element 1-6 or 7-12 or 13-18 or 19-24 or 25-30 or 31-36 arrange along main scanning direction.
Thereby, it should be noted, six surface light emitting laser diode element 1-6 that arrange along main scanning direction or 7-12 or 13-18 or 19-24 or 25-30 or 31-36 along sub scanning direction with step-type displacement setting.As a result, 36 laser beams send and do not cause coincidence from 36 surface light emitting laser diode element 1-36.
In addition, it should be noted, six surface light emitting laser diode element 1-6 or 7-12 or 13-18 or 19-24 or 25-30 or 31-36 are arranged in the X that is spaced apart that makes two adjacent surface light emitting laser diode elements along main scanning direction.
In addition, six surface light emitting laser diode elements 1,7,13,19,25 and 31 of arranging along sub scanning direction, or 2,8,14,20,26 and 32, or 3,9,15,21,27 and 33, or 4,10,16,22,28 and 34, or 5,11,17,23,29 and 35, or 6,12,18,24,30 and 36 Y that are spaced apart that are configured to make two adjacent surface light emitting laser diode elements.
Interval Y is set to be less than interval X.
For this structure, it should be noted, six straight line L1-L6 that draw perpendicular to the straight line 40 extending along sub scanning direction from the center separately of six surface light emitting laser diode element 1-6 along main scanning direction arrangement are formed along sub scanning direction has equal interval C
1, wherein, C
1be confirmed as C
1=Y/6.
Similarly, from six surface light emitting laser diode element 7-12 that arrange along main scanning direction equally, 13-18,19-24, six straight lines that the center separately of 25-30 and 31-36 is drawn perpendicular to straight line 40 are formed along sub scanning direction to be had and interval C
1equal same intervals.
Fig. 2 is the schematic sectional view of the diode element of surface light emitting laser shown in Fig. 1.
With reference to Fig. 2, surface light emitting laser diode element 1 comprises substrate 401, reflector 402 and 406, cavity separate layer 403 and 405, active layer 404, selective oxide layer 407, contact layer 408, SiO
2layer 409, insulating resin layer 410, p lateral electrode 411 and n lateral electrode 412.
Substrate 401 forms (n-GaAs) by N-shaped GaAs.Reflector 402 is by repeating the n-Al as repetitive
0.9ga
0.1as/n-Al
0.3ga
0.7as forms, and has a kind of 40.5 [n-Al of repetition
0.9ga
0.1as/n-Al
0.3ga
0.7as] structure, wherein, reflector 402 is formed on the interarea of substrate 401.Therefore, n-Al
0.9ga
0.1as and n-Al
0.3ga
0.7each in As has the thickness that is set equal to λ/4n (n is the refractive index of each semiconductor layer), and wherein, λ represents the oscillation wavelength of surface light emitting laser diode element 1.
Cavity separate layer 403 is by non-impurity-doped Al
0.6ga
0.4as layer forms and is formed on reflector 402.Active layer 404 has quantum well structure and is formed on cavity separate layer 403, in this quantum well structure, comprises Al
0.12ga
0.88As quantum well layer and Al
0.3ga
0.7as barrier layer.
Cavity separate layer 405 is by non-impurity-doped Al
0.6ga
0.4as layer forms and is formed on active layer 404.Reflector 406 is by repeating the p-Al as repetitive
0.9ga
0.1as/p-Al
0.3ga
0.7as forms, and has a kind of 24 [p-Al of repetition
0.9ga
0.1as/p-Al
0.3ga
0.7as] structure, wherein, reflector 406 is formed on cavity separate layer 405.Therefore, p-Al
0.9ga
0.1as and p-Al
0.3ga
0.7each in As has the thickness that is set equal to λ/4n (n is the refractive index of each semiconductor layer).
Selective oxide layer 407 is formed and is located at the inside in reflector 406 by p-AlAs.Therefore, it should be noted, selective oxide layer 407 comprises non-oxide region 407a and oxide regions 407b and has the thickness of 20nm.
Contact layer 408 forms and is formed on reflector 406 by p-GaAs.SiO
2layer 409 is formed and covers a part of interarea in reflector 402 and the end face of cavity separate layer 403, active layer 404, cavity separate layer 405, reflector 406, selective oxide layer 407 and contact layer 408.
Insulating resin layer 410 is formed and SiO
2layer 409 adjacency.P lateral electrode 411 is formed in a part and insulating resin layer 410 for contact layer 408.N lateral electrode 412 is formed on the back side of substrate 401.
Each formation in reflector 402 and 406 utilizes cloth loudspeaker lattice multipath reflection that the oscillation light of active layer 404 interior formation is limited in to the semiconductor distributed bragg reflector in this active layer 404.
In addition, the refractive index of oxide regions 407b is less than the refractive index of non-oxide region 407a.Therefore, oxide regions 407b forms a kind of for limiting the electric current injecting from p lateral electrode 411 so that it flow to the current limit portion of active layer 404 via non-oxide region 407a, and also for the oscillation light of active layer 404 interior formation is limited in non-oxide region 407a.Thus, surface light emitting laser diode element 1 is carried out laser generation with low threshold current.
Fig. 3 is near the cutaway view of the part of the active layer 404 of surface light emitting laser diode element 1 shown in presentation graphs 2.
With reference to Fig. 3, reflector 402 comprises low-index layer 4021, high refractive index layer 4022 and composition graded bedding 4023.Low-index layer 4021 is by n-Al
0.9ga
0.1as forms, and high refractive index layer 4022 is by n-Al
0.3ga
0.7as forms.On the other hand, by Al content, from low-index layer 4021 and high refractive index layer 4022, any one gradually changes to the n-AlGaAs of another one in this low-index layer 4021 and high refractive index layer 4022 and forms composition graded bedding 4023.In addition, low-index layer 4021 contacts with cavity separate layer 403.
Reflector 406 comprises low-index layer 4061, high refractive index layer 4062 and composition graded bedding 4063.Low-index layer 4061 is by p-Al
0.9ga
0.1as forms, and high refractive index layer 4062 is by p-Al
0.3ga
0.7as forms.On the other hand, by Al content, from low-index layer 4061 and high refractive index layer 4062, any one gradually changes to the p-AlGaAs of another one in this low-index layer 4061 and high refractive index layer 4062 and forms composition graded bedding 4063.In addition, low-index layer 4061 contacts with cavity separate layer 405.
Active layer 404 is Al by composition
0.12ga
0.8three quantum well layers 4041 and the composition of 8As are Al
0.3ga
0.7four barrier layers 4042 of As form, wherein, and three quantum well layers 4041 and alternately lamination of four barrier layers 4042.In addition, barrier layer 4042 contacts with 405 with cavity separate layer 403.
In surface light emitting laser diode element 1, cavity separate layer 403 forms resonator with 405 together with active layer 404, wherein, be set equal to a wavelength (=λ) of this surface light emitting laser diode element 1 along the thickness of this resonator perpendicular to substrate 401 directions.In other words, cavity separate layer 403 forms a wavelength resonances device together with active layer 404 with 405.
It should be noted in addition, each in the surface light emitting laser diode element 2-36 shown in Fig. 2 has the structure identical with the surface light emitting laser diode element 1 shown in Fig. 2 and 3.
Fig. 4 A-4H is the diagram of the manufacture process of surface-emission laser array 100 shown in presentation graphs 1.In the explanation of Fig. 4 A-4H, the manufacture process of surface-emission laser array 100 is described with reference to the step of one of surface light emitting laser diode element 1-36 for the manufacture of shown in Fig. 1.
With reference to Fig. 4 A, in the beginning of a series of processing, reflector 402, cavity separate layer 403, active layer 404, cavity separate layer 405, selective oxide layer 407 and contact layer 408 utilize MOCVD (mocvd) to process in turn lamination on substrate.
In this case, adopt trimethyl aluminium (TMA), trimethyl gallium (TMG), arsenous hydricde (AsH
3) and hydrogen selenide (H
2se) form the n-Al in reflector 402 as raw material
0.9ga
0.1as layer and n-Al
0.3ga
0.7as layer.In addition, adopt trimethyl aluminium (TMA), trimethyl gallium (TMG) and arsenous hydricde (AsH
3) form the Al of cavity separate layer 403 as raw material
0.6ga
0.4as layer.
In addition, adopt trimethyl aluminium (TMA), trimethyl gallium (TMG) and arsenous hydricde (AsH
3) form the Al of active layer 404 as raw material
0.12ga
0.88as/Al
0.3ga
0.7as structure.
In addition, adopt trimethyl aluminium (TMA), trimethyl gallium (TMG) and arsenous hydricde (AsH
3) form the Al of cavity separate layer 405 as raw material
0.6ga
0.4as layer.
In addition, adopt trimethyl aluminium (TMA), trimethyl gallium (TMG), arsenous hydricde (AsH
3) and carbon tetrabromide (CBr
4) form the p-Al in reflector 406 as raw material
0.9ga
0.1as/p-Al
0.3ga
0.7as structure.Optionally, available dimethyl zinc (DMZn) replaces carbon tetrabromide (CBr
4).
In addition, adopt trimethyl aluminium (TMA), arsenous hydricde (AsH
3) and carbon tetrabromide (CBr
4) form the p-AlAs layer of selective oxide layer 407 as raw material, and adopt trimethyl gallium (TMG), arsenous hydricde (AsH
3) and carbon tetrabromide (CBr
4) form the p-GaAs layer of contact layer 58 as raw material.In the case, same available dimethyl zinc (DMZn) replaces carbon tetrabromide (CBr
4).
Then, in the step of Fig. 4 B, photoresist film (resist film) is formed on contact layer 408, and uses photoetching process to form photoresist pattern 420 on this contact layer 408.
Forming after photoresist pattern 420, utilize this photoresist pattern 420 in the step of Fig. 4 C, the periphery of reflector 402, cavity separate layer 403, active layer 404, cavity separate layer 405, reflector 406, selective oxide layer 407 and contact layer 408 to be carried out to dry etch process as mask.Then, remove photoresist pattern 420.
Then, the step of execution graph 4D after the step of Fig. 4 C wherein, is heated to 425 DEG C thus obtained structure under the external environment of utilizing nitrogen that the water of 85 DEG C is seethed with excitement.Thus, oxidizing process proceeds to its central portion from its peripheral part in selective oxide layer 407, and thus, at this selective oxide layer 407 interior formation oxidation free layer 407a and oxide layer 407b.
Subsequently, in the step of Fig. 4 E, utilize CVD (chemical vapor deposition) processing to form SiO on the whole surface of the structure of the acquisition of step shown in Fig. 4 D
2layer 409.Subsequently, utilize photoetching process to remove the SiO of light beam ejaculation region and neighboring area thereof
2film.
In addition, in the step of Fig. 4 F, utilize spin-coat process at whole textural coating insulating resin layer 410, and remove the insulating resin layer 410 in light beam ejaculation region.
Then,, in the step of Fig. 4 G, at the photoresist pattern that forms the rear formation preliminary dimension of insulating resin layer 410, and utilize vapor deposition processing on the whole surface of thus obtained structure, to deposit p lateral electrode material.In addition, by transporting the p lateral electrode material on (lift off) photoresist pattern, form p lateral electrode 411.In addition, in the step of Fig. 4 H, the back side of substrate 401 is ground, and form n lateral electrode 412 on the back side of grinding thus.Subsequently, carrying out annealing in process is the each formation ohm contact in p lateral electrode 411 and n lateral electrode 412.Thus, finished surface emission laser array 100.
Although Fig. 4 B and 4C representative are used to form the dry etch process of a surface light emitting laser diode element, it should be noted, in the step of Fig. 4 B and 4C, all 36 surface light emitting laser diode element 1-36 are carried out to dry etch process simultaneously.In the case, it should be noted, adopt the photomask of 36 surface light emitting laser diode element 1-36 shown in a kind of Fig. 1 that is suitable for forming to be provided for forming the photoresist pattern of these 36 surface light emitting laser diode element 1-36 simultaneously.Thus, adopt a kind of like this photomask to be formed for forming the photoresist pattern of 36 surface light emitting laser diode element 1-36, this photomask is designed such that interval X and Y meet six linears that are related to Y < X and make to draw perpendicular to straight line 40 from the center separately of six surface light emitting laser diode element 1-6 or 7-12 or 13-18 or 19-24 or 25-30 or 31-36 and become and have equal interval C1 simultaneously.
The feature that the surface-emission laser array 100 of the present embodiment has is that the interval Y between the surface light emitting laser diode element of arranging along sub scanning direction is set to be less than the interval X between the surface light emitting laser diode element of arranging along main scanning direction.Thus, compared with interval Y being set as being greater than the situation of interval X, can reduce interval C1 (=Y/6), this is configured with and is beneficial to high density recording simultaneously.
Although the interval between the surface light emitting laser diode element that can simultaneously dwindle the interval between the surface light emitting laser diode element of arranging along sub scanning direction and arrange along main scanning direction, but consider that the heat that need to reduce between surface light emitting laser diode element interferes and consider and need to guarantee that sufficient space provides interconnection pattern for each surface light emitting laser diode element, preferably maintain larger interval to carry out high density recording along main scanning direction.
In embodiment 1, interval X is set to for example 30 μ m, and interval Y is set to 24 μ m simultaneously.As a result, interval C
1(=24/6=4 μ m) to be set to Y/6.
At installation surface light emitting laser diode element, so that the surface light emitting laser diode element of equal number arranges along sub scanning direction and main scanning direction, this area is actual is to increase interval between the surface light emitting laser diode element of arranging along sub scanning direction to more than the interval between the surface light emitting laser diode element of arranging along main scanning direction.With front contrary, by reducing as in situation of the present invention along the interval between the surface light emitting laser diode element of sub scanning direction arrangement to the interval being less than between the surface light emitting laser diode element of arranging along main scanning direction, compared with conventional situation, interval C1 can be reduced, and more highdensity record can be carried out.
Fig. 5 is another schematic sectional view of the diode element of surface light emitting laser shown in Fig. 1 1-36.Each can formation by surface light emitting laser diode element 1A as shown in Figure 5 in the diode element of surface light emitting laser shown in Fig. 1 1-36.
With reference to Fig. 5, surface light emitting laser diode element 1A has with aforementioned surface light emitting laser diode element 1 and similarly constructs, except replace respectively the cavity separate layer 403 and 405 and with active layer 404A replacement active layer 404 of surface light emitting laser diode element 1 shown in Fig. 2 with cavity separate layer 403A and 405A.
Cavity separate layer 403A is by the Al being formed on reflector 402
0.7ga
0.3as layer forms.Active layer 404A has quantum well structure, and this quantum well structure is made the GaInPAs quantum well layer that compression strain gathers and gathered elongation strain Ga in the inner by its composition
0.6in
0.4p barrier layer forms, and wherein, active layer 404A is formed on cavity separate layer 403A.In addition, cavity separate layer 405A is by one deck (Al
0.7ga
0.3)
0.5in
0.5p forms and is formed on active layer 404A.Surface light emitting laser diode element 1A generates the laser beam of 780nm in the time of vibration.
Fig. 6 is near the cutaway view of the part of the active layer 404A of the 1A of surface light emitting laser diode element shown in presentation graphs 5.
With reference to Fig. 6, the low-index layer 4021 in visible reflector 402 is formed with cavity separate layer 403A and contacts, and the low-index layer 4061 in reflector 406 is formed with cavity separate layer 405A and contacts.
Active layer 404A is by quantum well formation of structure, in this quantum well structure, and three GaInPAs quantum well layer 4041A and four Ga
0.6in
0.4alternately lamination of P barrier layer 4042A.In addition, barrier layer 4042A contacts with 405A with cavity separate layer 403A.
In addition, in surface light emitting laser diode element 1A, cavity separate layer 403A forms resonator with 405A together with active layer 404A, wherein, be set equal to the laser oscillation wavelength (=λ) of this surface light emitting laser diode element 1A along the thickness of this resonator perpendicular to substrate 401 directions.Therefore, cavity separate layer 403A forms a wavelength resonances device together with active layer 404A with 405A.
The potential well layer 4041A that table 1 is below presented at cavity separate layer 403A or 405A and active layer 404A forms in the situation of AlGaAs/AlGaAs structure and the potential well layer 4041A of cavity separate layer 403A or 405A and active layer 404A forms in the situation of AlGaInP/GaInPAs structure, the band gap discrepancy delta Eg between the band gap discrepancy delta Eg between this cavity separate layer 403A or 405A and quantum well layer 4041A and barrier layer 4042A and quantum well layer 4041A.
Table 1
With reference to table 1, visible in the case of cavity separate layer 403A and 405A by AlGaAs form, the quantum well layer 4041A of active layer 404A is formed by AlGaAs and surface light emitting laser diode element has the oscillation wavelength of 780nm, the band gap discrepancy delta Eg that the band gap discrepancy delta Eg between this cavity separate layer 403A or 405A and quantum well layer 4041A becomes between 465.9meV and barrier layer 4042A and quantum well layer 4041A becomes 228.8meV.
In addition, visible in the case of cavity separate layer 403A and 405A by AlGaAs form, the quantum well layer 4041A of active layer 404A is formed by GaAs and surface light emitting laser diode element has the oscillation wavelength of 850nm, the band gap discrepancy delta Eg that the band gap discrepancy delta Eg between this cavity separate layer 403A or 405A and quantum well layer 4041A becomes between 602.6meV and barrier layer 4042A and quantum well layer 4041A becomes 365.5meV.
On the other hand, be also shown in the case of cavity separate layer 403A and 405A by AlGaInP form, the quantum well layer 4041A of active layer 404A is formed by GaInPAs and surface light emitting laser diode element has the oscillation wavelength of 780nm, the band gap discrepancy delta Eg that the band gap discrepancy delta Eg between this cavity separate layer 403A or 405A and quantum well layer 4041A becomes between 767.3meV and barrier layer 4042A and quantum well layer 4041A becomes 463.3meV.
It should be noted, surface light emitting laser diode element 1A manufactures according to the process shown in Fig. 4 A-4H.In the case, form (the Al of cavity separate layer 403A and 405A
0.7ga
0.3)
0.5in
0.5p layer adopts trimethyl aluminium (TMA), trimethyl gallium (TMG), trimethyl indium (TMI) and phosphine (PH
3) form as raw material, the GaInPAs layer that forms the quantum well layer 4041A of active layer 404A adopts trimethyl gallium (TMG), trimethyl indium (TMI), phosphine (PH
3) and arsenous hydricde (AsH
3) form as raw material, and form the Ga of the barrier layer 4042A of active layer 404A
0.6in
0.4p layer adopts trimethyl gallium (TMG), trimethyl indium (TMI) and phosphine (PH
3) form as raw material.
Thus, by forming cavity separate layer 403A and 405A with AlGaInP and forming the quantum well layer 4041A of active layer 404A with GaInPAs, compared with the past, can enlarge markedly the band gap discrepancy delta Eg between band gap discrepancy delta Eg and barrier layer 4042A and the quantum well layer 4041A between this cavity separate layer 403A or 405A and quantum well layer 4041A.As a result, the carrier wave restriction effect in quantum well layer 4041A significantly strengthens, and surface light emitting laser diode element 1A can be with lower threshold value vibration and with higher power output Emission Lasers bundle.
In addition, can gather compression stress GaInPAs in the inner because active layer 404A comprises, so cause the band separation between heavy hole and light hole, this causes gain to increase simultaneously.So this surface light emitting laser diode element provides high-gain, and can low threshold value obtain the laser generation with high-output power.Here, it should be noted, the 780nm of AlGaAs based material manufacture or the surface light emitting laser diode element of 850nm that adopt lattice constant generally to equal GaAs substrate can not obtain this effect.
In addition, due to the enhancing of carrier wave restriction and because strained quantum potential well is configured to the gain raising that active layer 404A obtains, so can reduce the threshold current for surface light emitting laser diode element 1A, and can reduce the reflectivity in the reflector 406 at the emitting side place that is located at laser beam, this allows further to increase power output simultaneously.
Along with the further raising of gain, can suppress the light output decline causing that heats up due to surface light emitting laser diode element 1A, and can further reduce the interval between element in surface-emission laser array 100.
Because active layer 404A is made up of the material that does not contain aluminium, can sneak into by suppressing oxygen the formation that suppresses non-optical complex centre in this layer, the life-span of this elongated surfaces light emitting laser diode element simultaneously.As a result, recycling writing unit or light source cell.
In the situation that surface light emitting laser diode element 1A is used for surface light emitting laser diode element 1-36 shown in Fig. 1, interval between the surface light emitting laser diode element of arranging along sub scanning direction is set to be less than the interval between the surface light emitting laser diode element of arranging along main scanning direction equally, and compared with conventional situation, can reduce interval C1, this makes to carry out high density recording simultaneously.
Fig. 7 is another vertical view according to the surface-emission laser array of the embodiment of the present invention 1.Here, the surface-emission laser array of embodiment 1 can be the surface-emission laser array 100A shown in Fig. 7.
With reference to Fig. 7, surface-emission laser array 100A comprises surface light emitting laser diode element 101-132.
The array format two dimension that surface light emitting laser element 101-132 is listed as with four lines eight arranges.Therefore, four surface light emitting laser diode elements 101,109,117 and 125, or 102,110,118 and 126, or 103,111,119 and 127, or 104,112,120 and 128, or 105,113,121 and 129, or 106,114,122 and 130, or 107,115,123 and 131, or 108,116,124 and 132 arrange along sub scanning direction, simultaneously eight surface light emitting laser diode element 101-108 or 109-116 or 117-124 or 125-132 arrange along main scanning direction.
Thereby, it should be noted, eight surface light emitting laser diode element 101-108 that arrange along main scanning direction or 109-116 or 117-124 or 125-132 along sub scanning direction with step-type displacement setting.As a result, 32 laser beams send and do not cause coincidence from 32 surface light emitting laser diode element 101-132.
In addition, it should be noted, eight surface light emitting laser diode element 101-108 or 109-116 or 117-124 or 125-132 are arranged in the X that is spaced apart that makes two adjacent surface light emitting laser diode elements along main scanning direction.
In addition, four surface light emitting laser diode elements 101,109,117 and 125 of arranging along sub scanning direction, or 102,110,118 and 126, or 103,111,119 and 127, or 104,112,120 and 128, or 105,113,121 and 129, or 106,114,122 and 130, or 107,115,123 and 131, or in 108,116,124 and 132 array, the interval between two adjacent surface light emitting laser diode elements is set to interval d.
Interval d is set to be less than interval X.
For this structure, it should be noted, eight straight line L7-L14 that draw perpendicular to the straight line 41 extending along sub scanning direction from the center separately of eight surface light emitting laser diode element 101-108 along main scanning direction arrangement are formed along sub scanning direction has equal interval C
2, wherein, interval C
2be confirmed as C
2=d/8.
Similarly, be formed along sub scanning direction and have and interval C from eight straight lines that the center separately of eight surface light emitting laser diode element 109-116 along main scanning direction arrangement, 117-124,125-132 is drawn perpendicular to straight line 41 equally
2equal same intervals.
In embodiment 1, interval d is set to for example 24 μ m, and interval X is set to 30 μ m simultaneously.As a result, interval C
2equal 24/8=3 μ m.
Be arranged in traditional surface-emission laser array of the two-dimensional array form that eight row four are listed as interval C at 32 surface light emitting laser diode elements
2equal 6 μ m (=24/4).
Thus, set to such an extent that be less than along the interval X of the surface light emitting laser diode element of main scanning direction arrangement by the interval d the surface light emitting laser diode element of arranging along sub scanning direction, and the quantity of the surface light emitting laser diode element of arranging along sub scanning direction by minimizing is to the quantity that is less than the surface light emitting laser diode element of arranging along main scanning direction, interval C
2can be decreased to 3 μ m from the conventional value of 6 μ m.As a result, can adopt surface-emission laser array 100A to realize highdensity optics writes.
Each in the diode element of surface light emitting laser shown in Fig. 7 101-132 formed by the surface light emitting laser diode element 1A shown in the surface light emitting laser diode element 1 shown in Fig. 2 and 3 or Fig. 5 and 6.
Fig. 8 is another vertical view again according to the surface-emission laser array of the embodiment of the present invention 1.Here, the surface-emission laser array of embodiment 1 can be the surface-emission laser array 100B shown in Fig. 8.
With reference to Fig. 8, surface-emission laser array 100B comprises surface light emitting laser diode element 201-240.
The array format two dimension that surface light emitting laser element 201-240 is listed as with four lines ten arranges.Therefore, four surface light emitting laser diode elements 201,211,221 and 231, or 202,212,222 and 232, or 203,213,223 and 233, or 204,214,224 and 234, or 205,215,225 and 235, or 206,216,226 and 236, or 207,217,227 and 237, or 208,218,228 and 238, or 209,219,229 and 239, or 210,220,230 and 240 arrange along sub scanning direction, simultaneously ten surface light emitting laser diode element 201-210 or 211-220 or 221-230 or 231-240 arrange along main scanning direction.
Thereby, it should be noted, ten surface light emitting laser diode element 201-210 that arrange along main scanning direction or 211-220 or 221-230 or 231-240 along sub scanning direction with step-type displacement setting.As a result, 40 laser beams send and do not cause coincidence from 40 surface light emitting laser diode element 201-240.
In addition, it should be noted, ten surface light emitting laser diode element 201-210 or 211-220 or 221-230 or 231-240 are arranged in the X that is spaced apart that makes two adjacent surface light emitting laser diode elements along main scanning direction.
In addition, at four surface light emitting laser diode elements 201,211,221 and 231 of arranging along sub scanning direction, or 202,212,222 and 232, or 203,213,223 and 233, or 204,214,224 and 234, or 205,215,225 and 235, or 206,216,226 and 236, or 207,217,227 and 237, or 208,218,228 and 238, or 209,219,229 and 239, or in 210,220,230 and 240, two adjacent surface light emitting laser diode elements arrange with interval d.
Interval d is set to be less than interval X.
For this structure, it should be noted, ten straight line L15-L24 that draw perpendicular to the straight line 42 extending along sub scanning direction from the center separately of ten surface light emitting laser diode element 201-210 along main scanning direction arrangement are formed along sub scanning direction has equal interval C
2, wherein, interval C
2be confirmed as C
2=d/10.
Similarly, be formed along sub scanning direction and have and interval C from ten straight lines that the center separately of ten surface light emitting laser diode element 211-220 along main scanning direction arrangement, 221-230,231-240 is drawn perpendicular to straight line 42 equally
2equal same intervals.
In embodiment 1, interval d is set to for example 24 μ m, and interval X is set to 30 μ m simultaneously.As a result, interval C
2equal 24/10=2.4 μ m.Thus, increase to ten from eight (Fig. 7), interval C by the quantity that makes the surface light emitting laser diode element of arranging along main scanning direction
2can be decreased to 2.4 μ m from 3 μ m.As a result, can adopt surface-emission laser array 100B to realize highdensity optics writes.
Each in the diode element of surface light emitting laser shown in Fig. 8 201-240 formed by the surface light emitting laser diode element 1A shown in the surface light emitting laser diode element 1 shown in Fig. 2 and 3 or Fig. 5 and 6.
Fig. 9 is another vertical view again according to the surface-emission laser array of the embodiment of the present invention 1.Here, the surface-emission laser array of embodiment 1 can be the surface-emission laser array 100C shown in Fig. 9.
With reference to Fig. 9, surface-emission laser array 100C comprises surface light emitting laser diode element 201-238.
Thereby it should be noted, surface-emission laser array 100C has so a kind of structure, wherein, eight surface light emitting laser diode element 231-238 that arrange along main scanning direction are appended in 30 surface light emitting laser diode element 201-230 that arrange with three row ten row form two dimensions.In addition, surface-emission laser array 100C has so a kind of structure, wherein, six surface light emitting laser diode elements 209,210,219,220,220 and 230 of arranging along sub scanning direction are appended to in 32 surface light emitting laser diode element 201-208 of four lines eight row form two dimension settings, 211-218,221-228,231-238.In addition, surface-emission laser array 100C has so a kind of structure, and wherein, two surface light emitting laser diode elements are removed from the four lines ten row two-dimensional arraies of 40 surface light emitting laser diode elements.
Therefore, four surface light emitting laser diode elements 201, 211, 221 and 231, or 202, 212, 222 and 232, or 203, 213, 223 and 233, or 204, 214, 224 and 234, or 205, 215, 225 and 235, or 206, 216, 226 and 236, or 207, 217, 227 and 237, or 208, 218, 228 and 238 and three surface light emitting laser diode elements 209, 219 and 229, or 210, 220 and 230 arrange along sub scanning direction, while ten surface light emitting laser diode element 201-210 or 211-220 or 221-230 and eight surface light emitting laser diode element 231-238 arrange along main scanning direction.
Thereby it should be noted, ten surface light emitting laser diode element 201-210 that arrange along main scanning direction or 211-220 or 221-230 and eight surface light emitting laser diode element 231-238 along sub scanning direction with step-type displacement setting.As a result, 38 laser beams send and do not cause coincidence from 38 surface light emitting laser diode element 201-238.
In ten the surface light emitting laser diode element 201-210 or 211-220 or 221-230 and eight surface light emitting laser diode element 231-238 that arrange along main scanning direction, the interval between two adjacent surface light emitting laser diode elements is set to interval X.
In addition, at four surface light emitting laser diode elements 201,211,221 and 231 of arranging along sub scanning direction, or 202,212,222 and 232, or 203,213,223 and 233, or 204,214,224 and 234, or 205,215,225 and 235, or 206,216,226 and 236, or 207,217,227 and 237, or 208,218,228 and 238 and three surface light emitting laser diode elements 209,219 and 229, or 210, in 220 and 230, two adjacent surface light emitting laser diode elements arrange with interval d.
Interval d is set to be less than interval X.
For this structure, it should be noted, ten straight line L15-L24 that draw perpendicular to the straight line 42 extending along sub scanning direction from the center separately of ten surface light emitting laser diode element 201-210 along main scanning direction arrangement are formed along sub scanning direction has equal interval C
2, wherein, interval C
2be confirmed as C
2=d/10.
Similarly, ten straight lines drawing perpendicular to straight line 42 from the center separately of ten surface light emitting laser diode element 211-220 arranging along main scanning direction equally or 221-230 are formed along sub scanning direction to be had and interval C
2equal same intervals.Similarly, eight straight lines drawing perpendicular to straight line 42 from the center separately of same eight surface light emitting laser diode element 231-238 that arrange along main scanning direction are formed along sub scanning direction to be had and interval C
2equal same intervals.
In addition, for embodiment 1, interval d is set to 24 μ m and interval X is set to 30 μ m, therefore for surface-emission laser array 100C, and interval C
2be set to 24/10=2.4 μ m.Thus, increase to ten from eight (Fig. 7), interval C by the quantity that makes the surface light emitting laser diode element of arranging along main scanning direction
2can be decreased to 2.4 μ m from 3 μ m.As a result, can adopt surface-emission laser array 100C to realize highdensity optics writes.
Each in the diode element of surface light emitting laser shown in Fig. 9 201-238 formed by the surface light emitting laser diode element 1A shown in the surface light emitting laser diode element 1 shown in Fig. 2 and 3 or Fig. 5 and 6.
Figure 10 is another vertical view again according to the surface-emission laser array of the embodiment of the present invention 1.Here, the surface-emission laser array of embodiment 1 can be the surface-emission laser array 100D shown in Figure 10.
With reference to Figure 10, surface-emission laser array 100D has and a kind of surface light emitting laser diode element 241-244 is appended to the structure in the surface light emitting laser diode array 100B shown in Fig. 8.In addition, surface light emitting laser diode array 100D is identical with surface light emitting laser diode array 100B.
Therefore, five surface light emitting laser diode elements 201, 211, 221, 231 and 243, or 202, 212, 222, 232 and 244, or 209, 219, 229, 239 and 241, or 210, 220, 230, 240 and 242 and four surface light emitting laser diode elements 203, 213, 223 and 233, or 204, 214, 224 and 234, or 205, 215, 225 and 235, or 206, 216, 226 and 236, or 207, 217, 227 and 237, or 208, 218, 228 and 238 arrange along sub scanning direction, while ten surface light emitting laser diode element 201-210 or 211-220 or 221-230 or 231-240 and two surface light emitting laser diode elements 241 and 242, or 243 and 244 arrange along main scanning direction.
Thereby, it should be noted, ten surface light emitting laser diode element 201-210 that arrange along main scanning direction or 211-220 or 221-230 or 231-240 and two surface light emitting laser diode elements 241 and 242, or 243 and 244 along sub scanning direction with step-type displacement setting.As a result, 44 laser beams send and do not cause coincidence from 44 surface light emitting laser diode element 201-244.
At ten surface light emitting laser diode element 201-210 that arrange along main scanning direction or 211-220 or 221-230 or 231-240 and two surface light emitting laser diode elements 241 and 242, or in 243 and 244, the interval between two adjacent surface light emitting laser diode elements is set to interval X.
In addition, at five surface light emitting laser diode elements 201 arranging along sub scanning direction, 211, 221, 231 and 243, or 202, 212, 222, 232 and 244, or 209, 219, 229, 239 and 241, or 210, 220, 230, 240 and 242 array and four surface light emitting laser diode elements 203, 213, 223 and 233, or 204, 214, 224 and 234, or 205, 215, 225 and 235, or 206, 216, 226 and 236, or 207, 217, 227 and 237, or 208, 218, in 228 and 238 array, two adjacent surface light emitting laser diode elements arrange with interval d.
Interval d is set to be less than interval X.
Similarly, from two surface light emitting laser diode elements 241 and 242 of arranging along main scanning direction equally, or two straight lines drawing perpendicular to straight line 42 of 243 and 244 center are separately formed along sub scanning direction and have and interval C
2equal same intervals.In addition, structure is identical with the structure of the surface-emission laser array 100B illustrating above.
Thus, the quantity by making to be located at the surface light emitting laser diode element in some row (second walks to fifth line) increases to ten and the surface light emitting laser diode element of equal number, interval C be not provided to every row from eight (Fig. 7)
2can be decreased to 2.4 μ m from 3 μ m.As a result, can adopt surface-emission laser array 100D to realize highdensity optics writes.
Each in the diode element of surface light emitting laser shown in Figure 10 201-244 formed by the surface light emitting laser diode element 1A shown in the surface light emitting laser diode element 1 shown in Fig. 2 and 3 or Fig. 5 and 6.
Figure 11 is another vertical view again according to the surface-emission laser array of the embodiment of the present invention 1.Here, the surface-emission laser array of embodiment 1 can be the surface-emission laser array 100E shown in Figure 11.
With reference to Figure 11, surface-emission laser array 100E comprises surface light emitting laser diode element 301-340.
The array format two dimension that surface light emitting laser element 301-340 is listed as with four lines ten arranges.Therefore, four surface light emitting laser diode elements 301, 311, 321 and 331, or 302, 312, 322 and 332, or 303, 313, 323 and 333, or 304, 314, 324 and 334, or 305, 315, 325 and 335, or 306, 316, 326 and 336, or 307, , 317, 327 and 337, or 308, 318, 328 and 338, or 309, 319, 329 and 339, or 310, 320, 330 and 340 are arranged in zigzag pattern along sub scanning direction, while ten surface light emitting laser diode element 301-310 or 311-320 or 321-330 or 331-340 arrange along main scanning direction.
Thereby, it should be noted, ten surface light emitting laser diode element 301-310 that arrange along main scanning direction or 311-320 or 321-330 or 331-340 along sub scanning direction with step-type displacement setting.As a result, 40 laser beams send and do not cause coincidence from 40 surface light emitting laser diode element 301-340.
In addition, it should be noted, ten surface light emitting laser diode element 301-310 or 311-320 or 321-330 or 331-340 are arranged in the X that is spaced apart that makes two adjacent surface light emitting laser diode elements along main scanning direction.
In addition, at four surface light emitting laser diode elements 301,311,321 and 331 of arranging along sub scanning direction, or 302,312,322 and 332, or 303,313,323 and 333, or 304,314,324 and 334, or 305,315,325 and 335, or 306,316,326 and 336, or 307,, 317,327 and 337, or 308,318,328 and 338, or 309,319,329 and 339, or in 310,320,330 and 340, two adjacent surface light emitting laser diode elements arrange with interval d.
Interval d is set to be less than interval X.
For this structure, it should be noted, ten straight line L15-L24 that draw perpendicular to the straight line 42 extending along sub scanning direction from the center separately of ten surface light emitting laser diode element 301-310 along main scanning direction arrangement are formed along sub scanning direction has equal interval C
2, wherein, interval C
2be confirmed as C
2=d/10.
Similarly, be formed along sub scanning direction and have and interval C from ten straight lines that the center separately of ten surface light emitting laser diode element 311-320 along main scanning direction arrangement, 321-330,331-340 is drawn perpendicular to straight line 42 equally
2equal same intervals.
For embodiment 1, interval d is set to 24 μ m and interval X is set to 30 μ m in addition, therefore for surface-emission laser array 100E, and interval C
2be set to 24/10=2.4 μ m.
Thus, increase to ten from eight (Fig. 7), interval C by the quantity that makes the surface light emitting laser diode element of arranging along main scanning direction
2can be decreased to 2.4 μ m from 3 μ m.As a result, can adopt surface-emission laser array 100E to realize highdensity optics writes.
Each in the diode element of surface light emitting laser shown in Figure 11 301-340 formed by the surface light emitting laser diode element 1A shown in the surface light emitting laser diode element 1 shown in Fig. 2 and 3 or Fig. 5 and 6.
Figure 12 is another vertical view again according to the surface-emission laser array of the embodiment of the present invention 1.Here, the surface-emission laser array of embodiment 1 can be the surface-emission laser array 100F shown in Figure 12.
For this surface-emission laser array 100F, on single substrate, be formed with 40 surface light emitting laser elements.For this surface-emission laser array, along the direction that makes every row illuminating part form oblique angle θ from main scanning direction towards sub scanning direction (below for convenient, be appointed as " T direction ") ten row illuminating parts are provided, in every row illuminating part, comprise four surface light emitting laser diode elements with equal intervals.Below for convenient, by start from the top side of paper shown in Figure 12 to specify to bottom side these behavior the first rows, the second row, the third line, fourth line ... and the tenth row.Thereby it should be noted, this ten row illuminating part arranges with the interval equating along sub scanning direction.Therefore, 40 surface light emitting laser diode elements are with the form setting of two-dimensional array.Thereby it should be noted, the position of illuminating part is offset along main scanning direction between odd-numbered line and even number line.
In this example, 40 surface light emitting laser diode elements along main scanning direction with the interval X that equates and along sub scanning direction the interval C to equate
2arrange.So, the distance C between two adjacent surface light emitting laser diode elements of sub scanning direction
2be given as C
2=Y/8.In addition, keep being related to d < X.
Adopt this structure, can suppress further to heat up.
Therefore, surface-emission laser array 100 (with reference to Fig. 1) for the above-described, wherein, 36 two-dimensional array form settings that surface light emitting laser diode element 1-36 is listed as with six row six, make the surface light emitting laser diode element 1 of arranging along sub scanning direction, 7, 13, 19, 25 and 31, or 2, 8, 14, 20, 26 and 32, or 3, 9, 15, 21, 27 and 33, or 4, 10, 16, 22, 28 and 34, or 5, 11, 17, 23, 29 and 35, or 6, 12, 18, 24, interval Y between 30 and 36 is less than the interval X between surface light emitting laser diode element 1-6 or 7-12 or 13-18 or 19-24 or 25-30 or the 31-36 arranging along main scanning direction, and interval between six straight line L1-L6 that draw perpendicular to the straight line 40 extending along sub scanning direction from the center separately of six surface light emitting laser diode element 1-6 arranging along main scanning direction or 7-12 or 13-18 or 19-24 or 25-30 or 31-36 is set to equal intervals C
1.
In addition, surface-emission laser array 100A (with reference to Fig. 7) for the above-described, wherein, 32 two-dimensional array form settings that surface light emitting laser element 101-132 is listed as with four lines eight, make the surface light emitting laser diode element 101 of arranging along sub scanning direction, 109, 117 and 125, or 102, 110, 118 and 126, or 103, 111, 119 and 127, or 104, 112, 120 and 128, or 105, 113, 121 and 129, or 106, 114, 122 and 130, or 107, 115, 123 and 131, or 108, 116, interval d between 124 and 132 is less than the interval X between surface light emitting laser diode element 101-108 or 109-116 or 117-124 or the 125-132 arranging along main scanning direction, and interval between eight straight line L7-L14 that draw perpendicular to the straight line 41 extending along sub scanning direction from the center separately of eight surface light emitting laser diode element 101-108 arranging along main scanning direction or 109-116 or 117-124 or 125-132 is set to equal intervals C
2.
In addition, surface-emission laser array 100B (with reference to Fig. 8) for the above-described, wherein, 40 two-dimensional array form settings that surface light emitting laser element 201-240 is listed as with four lines ten, make the surface light emitting laser diode element 201 of arranging along sub scanning direction, 211, 221 and 231, or 202, 212, 222 and 232, or 203, 213, 223 and 233, or 204, 214, 224 and 234, or 205, 215, 225 and 235, or 206, 216, 226 and 236, or 207, 217, 227 and 237, or 208, 218, 228 and 238, or 209, 219, 229 and 239, or 210, 220, interval d between 230 and 240 is less than the interval X between surface light emitting laser diode element 201-210 or 211-220 or 221-230 or the 231-240 arranging along main scanning direction, and interval between ten straight line L15-L24 that draw perpendicular to the straight line 42 extending along sub scanning direction from the center separately of ten surface light emitting laser diode element 201-210 arranging along main scanning direction or 211-220 or 221-230 or 231-240 is set to equal intervals C
2.
In addition, surface-emission laser array 100C (with reference to Fig. 9) for the above-described, wherein, 38 two-dimensional array form settings that surface light emitting laser diode element 201-238 is listed as with four lines ten, make the surface light emitting laser diode element 201 of arranging along sub scanning direction, 211, 221 and 231, or 202, 212, 222 and 232, or 203, 213, 223 and 233, or 204, 214, 224 and 234, or 205, 215, 225 and 235, or 206, 216, 226 and 236, or 207, 217, 227 and 237, or 208, 218, 228 and 238, or 209,219 and 229, or 210, interval d between 220 and 230 is less than the interval X between surface light emitting laser diode element 201-210 or 211-220 or 221-230 or the 231-238 arranging along main scanning direction, and interval between ten the straight line L15-L24 or eight the straight line L15-L22 that draw perpendicular to the straight line 42 extending along sub scanning direction from the center separately of 10 or 8 surface light emitting laser diode element 201-210 arranging along main scanning direction or 211-220 or 221-230 or 231-238 is set to equal intervals C
2.
In addition, surface-emission laser array 100D (with reference to Figure 10) for the above-described, wherein, 44 two-dimensional array form settings that surface light emitting laser diode element 201-244 is listed as with six row ten, make the surface light emitting laser diode element 201 of arranging along sub scanning direction, 211, 221, 231 and 243, or 202, 212, 222, 232 and 244, or 203, 213, 223 and 233, or 204, 214, 224 and 234, or 205, 215, 225 and 235, or 206, 216, 226 and 236, or 207, 217, 227 and 237, or 208, 218, 228 and 238, or 209, 219, 229, 239 and 241, or 210, 220, 230, interval d between 240 and 242 is less than the surface light emitting laser diode element 201-210 arranging along main scanning direction, or 211-220, or 221-230, or 231-240, or 241 and 242, or interval X between 243 and 244, and from ten or two surface light emitting laser diode element 201-210 along main scanning direction arrangement, or 211-220, or 221-230, or 231-240, or 241 and 242, or ten straight line L15-L24 drawing perpendicular to the straight line 42 extending along sub scanning direction of 243 and 244 center separately or two straight line L15 and L16, or interval between L23 and L24 is set to equal intervals C
2.
In addition, surface-emission laser array 100E (with reference to Figure 11) for the above-described, wherein, 40 two-dimensional array form settings that surface light emitting laser element 301-340 is listed as with four lines ten, make the surface light emitting laser diode element 301 of arranging along sub scanning direction, 311, 321 and 331, or 302, 312, 322 and 332, or 303, 313, 323 and 333, or 304, 314, 324 and 334, or 305, 315, 325 and 335, or 306, 316, 326 and 336, or 307, , 317, 327 and 337, or 308, 318, 328 and 338, or 309, 319, 329 and 339, or 310, 320, interval d between 330 and 340 is less than the interval X between surface light emitting laser diode element 301-310 or 311-320 or 321-330 or the 331-340 arranging along main scanning direction, and interval between ten straight line L15-L24 that draw perpendicular to the straight line 42 extending along sub scanning direction from the center separately of ten surface light emitting laser diode element 301-310 arranging along main scanning direction or 311-320 or 321-330 or 331-340 is set to equal intervals C
2.
In addition, for the surface-emission laser array 100F (with reference to Figure 12) of embodiment 1,40 surface light emitting laser diode elements are with two-dimensional array form setting, wherein, by interval d being set to such an extent that be less than interval X, be set to equal intervals C along the interval of sub scanning direction
2.
Thus, for according to the surface-emission laser array of embodiment 1, wherein, m × n surface light emitting laser diode element (m, n is equal to or greater than 2 integer) be arranged to the capable n of m row, interval between m the surface light emitting laser diode element of arranging along sub scanning direction is set to be less than the interval between n the surface light emitting laser diode element of arranging along main scanning direction, and be set to equal intervals value from the center of n separately of n the surface light emitting laser diode element along main scanning direction arrangement perpendicular to the interval between the n bar straight line of the straight line drafting of extending along sub scanning direction.
Therefore, for embodiment 1, the quantity of surface light emitting laser diode element of arranging along sub scanning direction is set to the quantity that is less than the surface light emitting laser diode element of arranging along main scanning direction and (thereby keeps m≤n), and be less than the interval between n the surface light emitting laser diode element of arranging along main scanning direction along the interval between m surface light emitting laser diode element of sub scanning direction arrangement, thus, interval (equal intervals) between the n bar straight line of drawing perpendicular to the straight line extending along sub scanning direction from the center of n separately of n the surface light emitting laser diode element along main scanning direction arrangement is set to be less than conventional situation.
For the surface-emission laser array of embodiment 1, can adopt any structure, as long as this structure comprises multiple surface light emitting laser diode elements of being arranged to two-dimensional array form, interval between the multiple surface light emitting laser diode elements that make to arrange along first direction in it is less than the interval between multiple surface light emitting laser diode elements of arranging along the second direction perpendicular to this first direction, and be formed along this first direction and there is equal intervals perpendicular to the straight line of the straight line drafting of extending along first direction from the center separately of the multiple surface light emitting laser diode elements along second direction arrangement.
For the surface-emission laser array of embodiment 1, can adopt any structure, as long as this structure comprises multiple surface light emitting laser diode elements of being arranged to two-dimensional array form, the quantity of the multiple surface light emitting laser diode elements that make its interior interval between multiple surface light emitting laser diode elements of first direction arrangement be set to fiducial value and to arrange along this first direction is set to the quantity that is less than multiple surface light emitting laser diode elements of arranging along the second direction perpendicular to this first direction, and be formed along this first direction and there is equal intervals perpendicular to the straight line of the straight line drafting of extending along first direction from the center separately of the multiple surface light emitting laser diode elements along second direction arrangement.Here, fiducial value is set to 28 μ m, this fiducial value is for example DocuColor 1256GA, DocuColor 8000, Digital Press, DocuColor C6550I/C5540I, DocuColor750I of traditional surface-emission laser array, the interval between the surface light emitting laser diode element of arranging along sub scanning direction adopting in 650I/550I, DocuColor f1100/a1100/1900 etc.
In traditional surface-emission laser array, the quantity of the surface light emitting laser diode element of arranging along main scanning direction is set equal to or is less than the quantity of the surface light emitting laser diode element of arranging along sub scanning direction, and in surface-emission laser array of the present invention, the quantity of the surface light emitting laser diode element of arranging along second direction (main scanning direction) is set to the quantity more than the surface light emitting laser diode element of arranging along first direction (sub scanning direction), therefore, interval between many straight lines of drawing perpendicular to the straight line extending along first direction (sub scanning direction) from the center separately of the surface light emitting laser diode element along second direction (main scanning direction) arrangement is set to be less than the interval between many straight lines of drawing that sub scanning direction interval 28 μ m arrange at multiple surface light emitting laser diode elements.
Be 28 μ m although described fiducial value in above stated specification, the desirable any value except 28 μ m of this fiducial value in the present invention.Therefore in ordinary circumstance, fiducial value is set equal to the interval between the surface light emitting laser diode element of arranging along this sub scanning direction the quantity in the case of the quantity of the surface light emitting laser diode element of arranging along main scanning direction being set as be equal to or less than the surface light emitting laser diode element of arranging along sub scanning direction.
Meanwhile, in the time will realizing certain packing density, need to reduce the lateral magnification along this sub scanning direction along the spacing of sub scanning direction by increasing.This is equivalent to reduce the situation of ratio fi/fo, and at this, fo represents the focal length of object (light source) side, and the focal length of fi representative image (scanning plane) side.Writing in optical system, this is equivalent to change the process of focal length between coupled lens 502 and anamorphote 503.
On the other hand, due to impact and the angle of divergence of large light-emitting zone, be difficult to change lateral magnification, therefore need fixed coupling lens 502 and convert anamorphote 503.Thus, by the focal length F of Reducing distortion lens 503, cause magnification ratio to reduce, this causes the NA (numerical aperture) providing as Nsin θ to increase simultaneously, represents refractive index at this N.But this causes light beam excessively to focus on and the depth of focus reduces.Correspondingly, in the time that optical system exists error, there is the problem of the variation increase of bundle spot size.For head it off, need to be by making hole narrow to adjust NA, and the method causes available light quantity to reduce, and need the light source of higher luminous power to realize identical optical recording process.Thereby the method is unfavorable for improving writing speed and packing density.For head it off, need complicated optical system, and this complicated optical system is characterised in that long optical path length, the problem that causes plant bulk to increase.
Installing for example DocuColor 1256GA, DocuColor 8000, Digital Press, DocuColor C6550I/C5540I, DocuColor 750I, the traditional surface-emission laser array adopting in 650I/550I or DocuColorf1100/a1100/1900 etc. has the structure that 8 row 4 are listed as, and is set to 28 μ m along the interval between the surface light emitting laser diode element of sub scanning direction arrangement.Therefore, the interval C between the vertical straight line of drawing is 7 μ m (referring to IEICE Institution of Electronics meeting 2004, CS-3-4).Adopt these devices, can realize writing of 2400dpi, and use the optical system of approximately 1.5 x magnifications.For utilizing these devices to realize the resolution of 4800dpi, occur adopting magnification ratio to be less than 1 times of for example obstacle of optical system of 0.75 times.
On the contrary, in the time of C < 5 μ m, even in the situation that optical system has 1 times or larger (approximately 1.06 times) magnification ratio, also can be in adopting low optical power output, before realizing, the high density of unconsummated 4800dpi resolution writes.In addition, in the situation that realizing 2400dpi resolution, can adopt the optical system of approximately 2.1 x magnifications.In Japanese patent application document JP 2005-309301, the device that adopts a kind of like this surface-emission laser array is disclosed, wherein, surface light emitting laser diode element forms the array that 6 row 6 are listed as, and interval between this surface light emitting laser diode element is all set to 30 μ m at main scanning direction and sub scanning direction.With aforementioned contrary, the present invention will set to such an extent that be greater than the interval along sub scanning direction along the interval of main scanning direction, even and if C is less than 5 μ m, and (C < 5 μ m), also can reduce heat and interfere, and can suppress power output decline or the lost of life.
[embodiment 2]
Figure 13 is according to the vertical view of the surface-emission laser array of the embodiment of the present invention 2.
With reference to Figure 13, comprise surface light emitting laser diode element 1-36, pad (pads) 51P-86P and interconnection pattern W1-W36 according to the surface-emission laser array 200 of embodiment 2.
In each surface light emitting laser element 1-36, cavity separate layer 403, active layer 404, cavity separate layer 405, reflector 406 and selective oxide layer 407 (with reference to Fig. 2) form mesa structure.In addition, for the surface-emission laser array 200 of embodiment 2, every limit that this mesa structure presents a kind of each surface light emitting laser diode element 1-36 has the rectangle of 16 μ m sizes.
Therefore, surface light emitting laser element 1-36 is configured to and the similar 6 row 6 row forms of surface-emission laser array 100 of embodiment 1.In addition, pad 51P-86P arranges around 36 surface light emitting laser element 1-36.Interconnection pattern W1-W36 is joint face light emitting laser element 1-36 and pad 51P-86P respectively.Each interconnection pattern W1-W36 has the width of 8 μ m.
For embodiment 2, surface light emitting laser diode element 1,7,13,19,25 and 31, or 2,8,14,20,26 and 32, or 3,9,15,21,27 and 33, or 4,10,16,22,28 and 34, or 5,11,17,23,29 and 35, or 6,12,18,24,30 and 36 along sub scanning direction with being spaced of 24 μ m, simultaneously surface light emitting laser diode element 1-6 or 7-12 or 13-18 or 19-24 or 25-30 or 31-36 along main scanning direction being spaced with 36 μ m.
In the case, with 8 μ m, (=24 μ m-16 μ interval m) arranges two surface light emitting laser diode elements adjacent along sub scanning direction, thereby this structure can not provide interconnection pattern W1-W36 in the space between two surface light emitting laser diode elements adjacent along sub scanning direction.
On the other hand, for main scanning direction, between adjacent two surface light emitting laser diode elements, be spaced apart 28 μ m (=44 μ m-16 μ m), thereby this structure can provide interconnection pattern W1-W36 in the space between two surface light emitting laser diode elements adjacent along main scanning direction.
Therefore,, for surface-emission laser array 200, connect respectively 20 surface light emitting laser diode element 1-7 at the outermost regions place that is positioned at 36 surface light emitting laser diode elements that form six row six column arrays, 12, 13, 18, 19, 24, 25 and 30-36 and pad 51P-57P, 62P, 63P, 68P, 69P, 74P, the interconnection pattern W1-W7 of 75P and 80P-86P, W12, W13, W18, W19, W24, W25, W30-W36 is not located in the space between two adjacent surface light emitting laser diode elements, and connects respectively 16 surface light emitting laser diode element 8-11 at the interior zone place that is positioned at 36 surface light emitting laser diode element 1-36, 14-17, 20-23 and 26-29 and pad 58P-61P, 64P-67P, the interconnection pattern W8-W11 of 70P-73P and 76P-79P, W14-W17, W20-W23 and W26-W29 are configured to make in one or two interconnection pattern in aforementioned interconnection pattern space between the two adjacent surface light emitting laser diode elements of arranging along main scanning direction.
More specifically, interconnection pattern W8-W11, W14-W17, W20-W23 and W26-W29 are configured to make an interconnection pattern in these interconnection patterns between surface light emitting laser diode element 1 and 2, between surface light emitting laser diode element 2 and 3, between surface light emitting laser diode element 7 and 8, between surface light emitting laser diode element 8 and 9, between surface light emitting laser diode element 13 and 14, between surface light emitting laser diode element 15 and 16, between surface light emitting laser diode element 16 and 17, between surface light emitting laser diode element 17 and 18, between surface light emitting laser diode element 19 and 20, between surface light emitting laser diode element 21 and 22, between surface light emitting laser diode element 22 and 23, between surface light emitting laser diode element 23 and 24, between surface light emitting laser diode element 25 and 26, between surface light emitting laser diode element 26 and 27, between surface light emitting laser diode element 31 and 32 and between surface light emitting laser diode element 32 and 33, and make two interconnection patterns in these interconnection patterns between surface light emitting laser diode element 10 and 11, between surface light emitting laser diode element 11 and 12, between surface light emitting laser diode element 27 and 28, between surface light emitting laser diode element 28 and 29, between surface light emitting laser diode element 29 and 30, between surface light emitting laser diode element 33 and 34, between surface light emitting laser diode element 34 and 35 and between surface light emitting laser diode element 35 and 36.
Therefore, the feature of surface-emission laser array 200 is the interconnection pattern W1-W36 that connects 36 surface light emitting laser diode element 1-36 and respective pad 51P-86P not to be located in the space between the surface light emitting laser diode element of arranging along sub scanning direction, and is located in the space between the surface light emitting laser diode element of arranging along main scanning direction.
Utilize this feature, compared with the situation of interconnection pattern is provided between surface light emitting laser diode element arranging along sub scanning direction, can dwindle the surface light emitting laser diode element 1,7,13,19,25 and 31 of arranging along this sub scanning direction, or 2,8,14,20,26 and 32, or 3,9,15,21,27 and 33, or 4,10,16,22,28 and 34, or 5,11,17,23,29 and 35, or interval between 6,12,18,24,30 and 36.As a result, can adopt surface-emission laser array 200 to realize highdensity optics writes.
Figure 14 is another vertical view according to the surface-emission laser array of the embodiment of the present invention 2.Here, the surface-emission laser array of embodiment 2 can be the surface-emission laser array 200A shown in Figure 14.
With reference to Figure 14, comprise surface light emitting laser diode element 101-132, pad 151P-182P and interconnection pattern W41-W72 according to the surface-emission laser array 200A of embodiment 2.
In each surface light emitting laser element 101-132, cavity separate layer 403, active layer 404, cavity separate layer 405, reflector 406 and selective oxide layer 407 (with reference to Fig. 2) form mesa structure.In addition, for the surface-emission laser array 200A of embodiment 2, every limit that this mesa structure presents a kind of each surface light emitting laser diode element 101-132 has the rectangle of 16 μ m sizes.
Therefore, surface light emitting laser element 101-132 is configured to and the similar 4 row 8 row forms of surface-emission laser array 100A of embodiment 1.In addition, pad 151P-182P arranges around 32 surface light emitting laser element 101-132.Interconnection pattern W41-W72 is joint face light emitting laser element 101-132 and pad 151P-182P respectively.Each interconnection pattern W41-W72 has the width of 8 μ m.
For embodiment 2, the surface light emitting laser diode element 101,109,117 and 125 of arranging along sub scanning direction, or 102,110,118 and 126, or 103,111,119 and 127, or 104,112,120 and 128, or 105,113,121 and 129, or 106,114,122 and 130, or 107,115,123 and 131, or 108,116,124 and 132 the interval with 24 μ m arrange, the interval between surface light emitting laser diode element 101-108 or 109-116 or 117-124 or the 125-132 simultaneously arranging along main scanning direction is set to 30 μ m.
In the case, with 8 μ m, (=24 μ m-16 μ interval m) arranges two surface light emitting laser diode elements adjacent along sub scanning direction, thereby this structure can not provide interconnection pattern W41-W72 in the space between two surface light emitting laser diode elements adjacent along sub scanning direction.
On the other hand, for main scanning direction, between adjacent two surface light emitting laser diode elements, be spaced apart 14 μ m (=30 μ m-16 μ m), thereby this structure can provide an interconnection pattern in the space between two surface light emitting laser diode elements adjacent along main scanning direction.
Therefore, for surface-emission laser array 200A, connect respectively 20 surface light emitting laser diode element 101-108 at the outermost regions place that is positioned at 32 surface light emitting laser diode element 101-132 that form four lines eight column arrays, 109, 116, 117, 124 and 125-132 and pad 151P-159P, 166P, 167P, the interconnection pattern W41-W49 of 174P-182P, W56, W57, W64-W72 is not located in the region between two adjacent surface light emitting laser diode elements, be configured to make an interconnection pattern between the two adjacent surface light emitting laser diode elements of arranging along main scanning direction and connect respectively at 12 surface light emitting laser diode element 110-115 at the interior zone place of 32 surface light emitting laser diode element 101-132 and interconnection pattern W50-W55 and the W58-W63 of 118-123 and pad 160P-165P and 168P-173P.
Therefore, the feature of surface-emission laser array 200A is the interconnection pattern W41-W72 that connects 32 surface light emitting laser diode element 101-132 and respective pad 151P-182P not to be located in the space between the surface light emitting laser diode element of arranging along sub scanning direction, and is located in the space between the surface light emitting laser diode element of arranging along main scanning direction.
Utilize this feature, compared with the situation of interconnection pattern is provided between surface light emitting laser diode element arranging along sub scanning direction, can dwindle the surface light emitting laser diode element 101,109,117 and 125 of arranging along this sub scanning direction, or 102,110,118 and 126, or 103,111,119 and 127, or 104,112,120 and 128, or 105,113,121 and 129, or 106,114,122 and 130, or 107,115,123 and 131, or interval between 108,116,124 and 132.As a result, can adopt surface-emission laser array 200A to realize highdensity optics writes.
Figure 15 is another vertical view again according to the surface-emission laser array of the embodiment of the present invention 2.Here, the surface-emission laser array of embodiment 2 can be the surface-emission laser array 200B shown in Figure 15.With reference to Figure 15, surface-emission laser array 200B comprises surface light emitting laser diode element 201-240, pad 241P-280P and interconnection pattern W201-W240.
In each surface light emitting laser element 201-240, cavity separate layer 403, active layer 404, cavity separate layer 405, reflector 406 and selective oxide layer 407 (with reference to Fig. 2) form mesa structure.In addition, for the surface-emission laser array 200B of embodiment 2, every limit that this mesa structure presents a kind of each surface light emitting laser diode element 201-240 has the rectangle of 16 μ m sizes.
The array format two dimension that surface light emitting laser element 201-240 is listed as with four lines ten arranges.In addition, pad 241P-280P arranges around 40 surface light emitting laser element 201-240.Interconnection pattern W201-W240 is joint face light emitting laser element 201-240 and pad 241P-280P respectively.Each interconnection pattern W201-W240 has the width of 8 μ m.
For embodiment 2, surface light emitting laser diode element 201, 211, 221 and 231, or 202, 212, 222 and 232, or 203, 213, 223 and 233, or 204, 214, 224 and 234, or 205, 215, 225 and 235, or 206, 216, 226 and 236, or 207, 217, 227 and 237, or 208, 218, 228 and 238, or 209, 219, 229 and 239, or 210, 220, 230 and 240 are arranged in the interval with 24 μ m along sub scanning direction, surface light emitting laser diode element 201-210 or 211-220 or 221-230 or 231-240 are arranged in the interval with 30 μ m along main scanning direction simultaneously.
In the case, with 8 μ m, (=24 μ m-16 μ interval m) arranges two surface light emitting laser diode elements adjacent along sub scanning direction, thereby this structure can not provide interconnection pattern W201-W240 in the space between two surface light emitting laser diode elements adjacent along sub scanning direction.
On the other hand, for main scanning direction, between adjacent two surface light emitting laser diode elements, be spaced apart 14 μ m (=30 μ m-16 μ m), thereby this structure can provide an interconnection pattern in the space between two surface light emitting laser diode elements adjacent along main scanning direction.
Therefore, for surface-emission laser array 200B, connect respectively 24 surface light emitting laser diode element 201-211 at the outermost regions place that is positioned at 40 surface light emitting laser diode element 201-240 that form four lines ten column arrays, 220, 221, 230-240 and pad 241P-251P, 260P, 261P, the interconnection pattern W201-W211 of 270P-280P, W220, W221, W230-W240 is not located in the region between two adjacent surface light emitting laser diode elements, be configured to make an interconnection pattern between the two adjacent surface light emitting laser diode elements of arranging along main scanning direction and connect respectively at 16 surface light emitting laser diode element 212-219 at the interior zone place of 40 surface light emitting laser diode element 201-240 and interconnection pattern W212-W219 and the W222-W229 of 222-229 and pad 252P-259P and 262P-269P.
Therefore, the feature of surface-emission laser array 200B is the interconnection pattern W201-W240 that connects 40 surface light emitting laser diode element 201-240 and respective pad 241P-280P not to be located in the space between the surface light emitting laser diode element of arranging along sub scanning direction, and is located in the space between the surface light emitting laser diode element of arranging along main scanning direction.
Utilize this feature, compared with the situation of interconnection pattern is provided between surface light emitting laser diode element arranging along sub scanning direction, can dwindle the surface light emitting laser diode element 201 of arranging along this sub scanning direction, 211, 221 and 231, or 202, 212, 222 and 232, or 203, 213, 223 and 233, or 204, 214, 224 and 234, or 205, 215, 225 and 235, or 206, 216, 226 and 236, or 207, 217, 227 and 237, or 208, 218, 228 and 238, or 209, 219, 229 and 239, or 210, 220, interval between 230 and 240.As a result, can adopt surface-emission laser array 200B to realize highdensity optics writes.
Figure 16 is another vertical view according to the surface-emission laser array of the embodiment of the present invention 2.Here, the surface-emission laser array of embodiment 2 can be the surface-emission laser array 200C shown in Figure 16.
With reference to Figure 16, surface light emitting laser diode array 200C has surface light emitting laser diode element 239 and 240, pad 279P and 280P in the 200B of surface light emitting laser diode array shown in a kind of Figure 15 of removing and the structure of interconnection pattern W239 and W240.In addition, surface light emitting laser diode array 200C is identical with surface-emission laser array 200B.
Therefore,, for surface-emission laser array 200C, 38 surface light emitting laser diode element 201-238 are configured to be similar to the situation of the surface light emitting laser diode element 201-238 in the surface-emission laser array 100C of embodiment 1.
Therefore, the feature of surface-emission laser array 200C is the interconnection pattern W201-W238 that connects 38 surface light emitting laser diode element 201-238 and respective pad 241P-278P not to be located in the space between the surface light emitting laser diode element of arranging along sub scanning direction, and is located in the space between the surface light emitting laser diode element of arranging along main scanning direction.
Utilize this feature, compared with the situation of interconnection pattern is provided between surface light emitting laser diode element arranging along sub scanning direction, can dwindle the surface light emitting laser diode element 201,211,221 and 231 of arranging along this sub scanning direction, or 202,212,222 and 232, or 203,213,223 and 233, or 204,214,224 and 234, or 205,215,225 and 235, or 206,216,226 and 236, or 207,217,227 and 237, or 208,218,228 and 238, or 209,219 and 229, or interval between 210,220 and 230.As a result, can adopt surface-emission laser array 200C to realize highdensity optics writes.
Figure 17 is another vertical view according to the surface-emission laser array of the embodiment of the present invention 2.Here, the surface-emission laser array of embodiment 2 can be the surface-emission laser array 200D shown in Figure 17.
With reference to Figure 17, surface light emitting laser diode array 200D has a kind of structure to appending surface light emitting laser diode element 241-244, pad 281P-284P and interconnection pattern W241-W244 in the diode array of surface light emitting laser shown in Figure 15 200B.In addition, surface light emitting laser diode array 200D is identical with surface-emission laser array 200B.
Surface light emitting laser diode element 201-244 is configured to be similar to the surface light emitting laser diode element 201-244 in the surface-emission laser array 100D of embodiment 1.Interconnection pattern W241-W244 is joint face light emitting laser diode element 241-244 and pad 281P-284P respectively.
Result, interconnection pattern W219 is located between the surface light emitting laser diode element 209 and 210 of arranging along main scanning direction and between surface light emitting laser diode element 241 and 242, and interconnection pattern W222 is located between the surface light emitting laser diode element 231 and 232 of arranging along main scanning direction and between surface light emitting laser diode element 243 and 244 simultaneously.
Therefore, the feature of surface-emission laser array 200D is the interconnection pattern W201-W244 that connects 44 surface light emitting laser diode element 201-244 and respective pad 241P-284P not to be located in the space between the surface light emitting laser diode element of arranging along sub scanning direction, and is located in the space between the surface light emitting laser diode element of arranging along main scanning direction.
Utilize this feature, compared with the situation of interconnection pattern is provided between surface light emitting laser diode element arranging along sub scanning direction, can dwindle the surface light emitting laser diode element 201 of arranging along this sub scanning direction, 211, 221, 231 and 243, or 202, 212, 222, 232 and 244, or 203, 213, 223 and 233, or 204, 214, 224 and 234, or 205, 215, 225 and 235, or 206, 216, 226 and 236, or 207, 217, 227 and 237, or 208, 218, 228 and 238, or 209, 219, 229, 239 and 241, or 210, 220, 230, interval between 240 and 242.As a result, can adopt surface-emission laser array 200D to realize highdensity optics writes.
Figure 18 is another vertical view according to the surface-emission laser array of the embodiment of the present invention 2.Here, the surface-emission laser array of embodiment 2 can be the surface-emission laser array 200E shown in Figure 18.
With reference to Figure 18, surface-emission laser array 200E comprises surface light emitting laser diode element 301-340, pad 341P-380P and interconnection pattern W301-W340.
In each surface light emitting laser element 301-340, cavity separate layer 403, active layer 404, cavity separate layer 405, reflector 406 and selective oxide layer 407 (with reference to Fig. 2) form mesa structure.In addition, for the surface-emission laser array 200E of embodiment 2, every limit that this mesa structure presents a kind of each surface light emitting laser diode element 301-340 has the rectangle of 16 μ m sizes.
Therefore, surface light emitting laser element 301-340 is configured to and the similar four lines ten row forms of surface-emission laser array 100E of embodiment 1.In addition, pad 341P-380P arranges around 40 surface light emitting laser element 301-340.Interconnection pattern W301-W340 is joint face light emitting laser element 301-340 and pad 341P-380P respectively.Each interconnection pattern W301-W340 has the width of 8 μ m.
For embodiment 2, surface light emitting laser diode element 301, 311, 321 and 331, or 302, 312, 322 and 332, or 303, 313, 323 and 333, or 304, 314, 324 and 334, or 305, 315, 325 and 335, or 306, 316, 326 and 336, or 307, , 317, 327 and 337, or 308, 318, 328 and 338, or 309, 319, 329 and 339, or 310, 320, 330 and 340 are arranged in the interval with 24 μ m along sub scanning direction, surface light emitting laser diode element 301-310 or 311-320 or 321-330 or 331-340 are arranged in the interval with 30 μ m along main scanning direction simultaneously.
In the case, with 8 μ m, (=24 μ m-16 μ interval m) arranges two surface light emitting laser diode elements adjacent along sub scanning direction, thereby this structure can not provide interconnection pattern W301-W340 in the space between two surface light emitting laser diode elements adjacent along sub scanning direction.
On the other hand, for main scanning direction, between adjacent two surface light emitting laser diode elements, be spaced apart 14 μ m (=30 μ m-16 μ m), thereby this structure can provide an interconnection pattern in the space between two surface light emitting laser diode elements adjacent along main scanning direction.
Therefore, for surface-emission laser array 200E, connect respectively 24 surface light emitting laser diode element 301-311 at the outermost regions place that is positioned at 40 surface light emitting laser diode element 301-340 that form four lines ten column arrays, 320, 321, 330-340 and pad 341P-351P, 360P, 361P, the interconnection pattern W301-W311 of 370P-380P, W320, W321, W330-W340 is not located in the region between two adjacent surface light emitting laser diode elements, be configured to make an interconnection pattern between the two adjacent surface light emitting laser diode elements of arranging along main scanning direction and connect respectively at 16 surface light emitting laser diode element 312-319 at the interior zone place of 40 surface light emitting laser diode element 301-340 and interconnection pattern W312-W319 and the W322-W329 of 322-329 and pad 352P-359P and 362P-369P.
Therefore, the feature of surface-emission laser array 200E is the interconnection pattern W301-W340 that connects 40 surface light emitting laser diode element 301-340 and respective pad 341P-380P not to be located in the space between the surface light emitting laser diode element of arranging along sub scanning direction, and is located in the space between the surface light emitting laser diode element of arranging along main scanning direction.
Utilize this feature, compared with the situation of interconnection pattern is provided between surface light emitting laser diode element arranging along sub scanning direction, can dwindle the surface light emitting laser diode element 301 of arranging along this sub scanning direction, 311, 321 and 331, or 302, 312, 322 and 332, or 303, 313, 323 and 333, or 304, 314, 324 and 334, or 305, 315, 325 and 335, or 306, 316, 326 and 336, or 307, , 317, 327 and 337, or 308, 318, 328 and 338, or 309, 319, 329 and 339, or 310, 320, interval between 330 and 340.As a result, can adopt surface-emission laser array 200E to realize highdensity optics writes.
Figure 19 is the diagram that describes the interconnection pattern layout of surface light emitting laser diode array of the present invention in detail.In Figure 19, it should be noted, only represent surface light emitting laser diode element 1-24, interconnection pattern W1-W24 and pad 51P-74P in surface light emitting laser diode element 1-36, interconnection pattern W1-W36 and pad 51P-86P.
With reference to Figure 19, respectively with the surface light emitting laser diode element 1-7 of perimeter region that is positioned at surface light emitting laser diode element 1-24 array, 12, the 13 interconnection pattern W1-W7 that are connected with 18-24, W12, W13 and W18-W24 are not located between two surface light emitting laser diode elements, and respectively with pad 51P-57P, 62P, 63P is connected with 68P-74P.
On the other hand, the interconnection pattern W8-W11 being connected with surface light emitting laser diode element 8-11 at array interior zone place and 14-17 respectively and W14-W17 are connected with pad 58P-61P and 64P-67P by being located between two surface light emitting laser diode elements arranging along main scanning direction.In the case, interconnection pattern W8 comprises interconnection pattern W8A and W8B, wherein, interconnection pattern W8A is by extending along main scanning direction and being connected with surface light emitting laser diode element 8, and interconnection pattern W8B is by extending along main scanning direction and being connected with this interconnection pattern W8A simultaneously.
Therefore, first interconnection pattern W8 stretches out from surface light emitting laser diode element 8 along main scanning direction, then along and the vertical sub scanning direction of this main scanning direction extend towards pad 58P through the region between two surface light emitting laser diode elements arranging along this main scanning direction.Each in interconnection pattern W9-W11 and W14-W17 is provided as being similar to interconnection pattern W8.
Therefore, the region between the each surface light emitting laser diode element being configured to through arranging along main scanning direction in interconnection pattern W8-W11 and W14-W17.
Figure 20 A-20C is the diagram that describes the interconnection pattern layout of surface light emitting laser diode array of the present invention in detail.
With reference to Figure 20 A-20C, in the case of the mesa structure of surface light emitting laser diode element 8 is rectangular, interconnection pattern W8 is provided as being parallel to the straight line 40 extending along sub scanning direction and stretches out from one side 8A of this surface light emitting laser diode element 8.Thus, interconnection pattern W8 can in any direction be connected with surface light emitting laser diode element 8, as long as it is connected with this limit 8A of this element 8.In addition, interconnection pattern W8 can be configured to be connected with one side 8B, and this limit 8B is parallel to the straight line extending along sub scanning direction.
Figure 21 A and 21B are the diagrams that describes the interconnection pattern layout of surface light emitting laser diode array of the present invention in detail.
Below, with reference to Figure 21 A and 21B, the layout at the surface light emitting laser diode element 1-24 shown in Figure 19 with interconnection pattern circular configuration is described.
At surface light emitting laser diode element 2,8 and 14 along the straight line setting of extending at sub scanning direction, interconnection pattern W8 is configured to make this interconnection pattern W8 to be connected with surface light emitting laser diode element 8 from the direction between two straight lines 43 and 44, referring to Figure 21 A.
Be parallel to main scanning direction and y axle is parallel in the x-y rectangular coordinate system of sub scanning direction at x axle, surface light emitting laser diode element 8 is located at the initial point place of this coordinate system, and surface light emitting laser diode element 2 and 14 is located at the position of departing from these surface light emitting laser diode element 8 distance b on y axle.
In the case, represent through the center of surface light emitting laser diode element 8 and with the tangent straight line 43 use y=ax of surface light emitting laser diode element 2, and the straight line 45 use y=-x/a+b that vertically cross this straight line 43 represent.
In the case, the coordinate of the intersection point A of straight line 43 and straight line 45 is given as [ab/ (a
2+ 1), a
2b/ (a
2+ 1)].
As mentioned above, interval between interval between surface light emitting laser diode element 2 and 8 and surface light emitting laser diode element 8 and 14 is set to 24 μ m, and because this surface light emitting laser diode element 2,8 and 14 diameter is set to 16 μ m, so the distance between b=24 μ m and some A and B is given as 8 μ m.Be related to b=24 μ m by utilizing, make the parameter a of distance 8 μ m between an A and B be given as a=2 (2)
1/2.
As a result, the angle θ between straight line 43 and x axle
1become approximately 70 degree.Because straight line 44 is configured to around x axle and straight line 43 symmetries, so the angle θ that this straight line 44 forms with respect to x axle
2also get the value of approximately 70 degree.Thus, be 0 degree at the forward that limits x axle, consider the live width of interconnection pattern W8, this interconnection pattern W8 can be connected with surface light emitting laser diode element 8 like this, makes whole interconnection pattern W8 be located at-70 degree to the scope of+70 degree.In addition, consider the live width of interconnection pattern W8, this interconnection pattern W8 can be connected with surface light emitting laser diode element 8 like this, and whole interconnection pattern W8 is located in the scope of 110 degree to 250 degree.
Figure 22 A and 22B are another diagrams that describes the interconnection pattern layout of surface light emitting laser diode array of the present invention in detail.
Below, with reference to Figure 22 A and 22B, the layout at the surface light emitting laser diode element 1-24 shown in Figure 19 with interconnection pattern circular configuration is described.
At surface light emitting laser diode element 2,8 and 14 along the straight line setting of extending at sub scanning direction, interconnection pattern W8 is configured to make this interconnection pattern W8 to be connected with surface light emitting laser diode element 8 from the direction between two straight lines 46 and 47, referring to Figure 22 A.Here, straight line 46 and 47 is the straight line stretching out from the center of surface light emitting laser diode element 8 and the central portion that passes through the live width direction of interconnection pattern W8.
Surface light emitting laser diode element 2,8 and 14 is similar to the situation setting of Figure 21 A and 21B, and is similar to the situation restriction x-y rectangular coordinate system of Figure 21 A and 21B.
In the case, straight line 46 use y=cx represent, and the straight line 48 use y=-x/c+b that vertically cross this straight line 46 represent.As a result, the coordinate of the intersection point C of straight line 46 and straight line 48 is given as [cb/ (c
2+ 1), c
2b/ (c
2+ 1)].
As mentioned above, interval between interval between surface light emitting laser diode element 2 and 8 and surface light emitting laser diode element 8 and 14 is set to 24 μ m, and because this surface light emitting laser diode element 2,8 and 14 diameter is set to 16 μ m and is set to 8 μ m because of the live width of interconnection pattern W8, so the distance between b=24 μ m and some B and C becomes 12 μ m.Be related to b=24 μ m by utilizing, make the parameter c of distance 12 μ m between a B and C be given as c=3 (2)
1/2.
As a result, the angle θ between straight line 46 and x axle
3become approximately 60 degree.Because straight line 47 is configured to around x axle and straight line 46 symmetries, so the angle 0 that this straight line 47 forms with respect to x axle
4also get the value of approximately 60 degree.Thus, be 0 degree at the forward that limits x axle, interconnection pattern W8 is connected with surface light emitting laser diode element 8 from forming-60 degree to the direction of+60 degree angles.It should be noted in addition, interconnection pattern W8 can be connected with surface light emitting laser diode element 8 in the direction of 120-240 degree angle along formation scope.
Each in interconnection pattern W9-W11 and W14-W17 is similar to above-mentioned interconnection pattern W8 to be provided.
Interval between the surface light emitting laser diode element of arranging along sub scanning direction has except the diameter of the mesa structure of the value 24 μ m, surface light emitting laser diode element 1-24 has and has except the value 8 μ m except the live width of the value 16 μ m and interconnection pattern W1-W24, is similar to said process and determines the interconnection pattern W8-W11 of surface light emitting laser diode element 8-11 and 14-17 and the layout of W14-W17.
In addition, although illustrated above by one or two interconnection pattern be located at along main scanning direction arrange surface light emitting laser diode element between and interconnection pattern is not located at along sub scanning direction arrange surface light emitting laser diode element between situation, the present invention also can be applicable to by three or more interconnection patterns be located at along main scanning direction arrange surface light emitting laser diode element between and interconnection pattern is not located at along sub scanning direction arrange surface light emitting laser diode element between situation.In addition, determine along the size of main scanning direction the quantity that is located at the interconnection pattern between the surface light emitting laser diode element of arranging along main scanning direction based on surface-emission laser array.
In addition, in the capable n column array of m that single interconnection pattern is located to multiple surface light emitting laser diode elements along main scanning direction arrange surface light emitting laser diode element between, m drops in the scope of 2-4.In addition, the in the situation that of m=2 and n=3, a surface light emitting laser diode element is positioned at array interior zone, and an interconnection pattern is located at along between two adjacent surface light emitting laser diode elements of main scanning direction.Therefore,, the capable n column array of m of surface light emitting laser diode element that is positioned at 2-4 scope at m, at least one interconnection pattern is located at along between two adjacent surface light emitting laser diode elements of main scanning direction.
Above, the array surface-emission laser array 100 of the embodiment 1 of placement-face light emitting laser diode element to high-density that can utilize multiple surface light emitting laser diode elements is described, 100A, 100B, 100C, the interconnection pattern method for arranging of 100D and 100E.Therefore, utilized the present embodiment that interval by the interval of the surface light emitting laser diode element of arranging along sub scanning direction being set as be narrower than the surface light emitting laser diode element of arranging along main scanning direction has been described and by the quantity of the surface light emitting laser diode element of arranging along sub scanning direction being set as be less than the quantity of the surface light emitting laser diode element of arranging along main scanning direction, thereby the center separately that makes the multiple surface light emitting laser diode elements from arranging along main scanning direction is formed along sub scanning direction and have and the array that identical interval arranges multiple surface light emitting laser diode elements, connect respectively multiple surface light emitting laser diode elements and the method for multiple interconnection patterns of corresponding pad separately perpendicular to many straight lines of the straight line drafting of extending along sub scanning direction.
But, the surface-emission laser array of embodiment 2 is not limited to this specific embodiment and contains any surface-emission laser array that can form high density surface light emitting laser diode element array, in this high density surface light emitting laser diode element array, interconnection pattern be not located at along sub scanning direction arrange surface light emitting laser diode element between and be located at along main scanning direction arrange surface light emitting laser diode element between.In the case, multiple surface light emitting laser diode element is configured such that many straight lines that the center separately of the multiple surface light emitting laser diode elements from arranging along main scanning direction is drawn perpendicular to the straight line extending along sub scanning direction are formed along sub scanning direction and have identical interval.
[application examples]
Figure 23 is the schematic diagram that represents to adopt the structure of the optical scanner of surface-emission laser array shown in Fig. 8.
With reference to Figure 23, optical scanner 500 comprises light source 501, coupled lens 502, aperture 504, anamorphote 503, polygon prism 505, deflector side scanning lens 506, image-side scanning lens 507, glass dust cover 508, image surface glass plate 508, image surface 509, sound control glass 510 and virtual mirror (dummy mirror) 511.
Light source 501 comprises the surface-emission laser array 100B shown in Fig. 8.Therefore, light source 501 generates 40 light beams that are a branch of light beam form, and wherein, the light beam projection forming is like this to coupled lens 502 and be converted to the light beam of slightly dispersing therein.Then, this light beam also projects to anamorphote 503 through aperture.
Then, projection is the collimated light beam along horizontal scan direction to each light beam of anamorphote 503 in this anamorphote internal conversion like this, and for sub scanning direction, this anamorphote focuses of the light beam near region polygon prism 505.Subsequently, light beam projects to polygon prism 505 via aperture 504, virtual mirror 511 and sound control glass 510.
In addition, light beam utilizes polygon prism deflection, and utilizes deflector side scanning lens 506 and image-side scanning lens 507 to focus on image surface 509 via glass dust cover 508.
Light source 501 and coupled lens 502 are fixed on the same parts that formed by aluminium.
Because light source 501 is formed by the surface-emission laser array 100B that comprises 10 surface light emitting laser diode element 201-210,211-220,221-230,231-240 and make straight line L15-L24 that from then on center separately of 10 surface light emitting laser diode elements is drawn perpendicular to straight line 42 be formed as having along sub scanning direction equal intervals, so by suitably adjusting the opening timing of 40 surface light emitting laser diode element 201-240, can realize a kind of and light source along sub scanning direction the structure that is spaced at the situation equivalence on photoreceptor to equate.
In addition, can adjust the interval of measuring point along sub scanning direction by adjusting the interval C1 of surface light emitting laser diode element 201-240 and the magnification ratio of optical system.So, be used as light source 501 at the surface-emission laser array 100B with 40 optical channels, wherein, element spacing C2 is fixed as 2.4 μ m as previously mentioned, by the magnification ratio of optical system is set as to approximately 2.2, the high density that can realize 4800dpi (point/inch) writes.By increase main scanning direction surface light emitting laser diode element quantity or by the interval d between the adjacent surface light emitting laser diode element that further reduces to arrange along sub scanning direction with further reduce interval C2 or by reducing the magnification ratio of optical system, can realize higher writing density.Thus, obtain higher print quality.In the case, by adjusting the opening timing of light source 501, can easily control the interval that writes of main scanning direction.
So, utilize optical scanner 500, can write 40 points simultaneously, thus, can realize high speed printing.In addition, by the quantity of the surface light emitting laser diode element in further increase surface-emission laser array 100B, can obtain higher print speed printing speed.
In addition, by use surface light emitting laser diode element 1A in surface-emission laser array 100B, the life-span of this surface-emission laser array 100B significantly improves, and recycling writing unit or light source cell.
In addition, for optical scanner 500, can utilize the surface light emitting laser diode array 100A shown in Fig. 7 to form light source 501.In the case, the surface light emitting laser diode element 101,109,117 and 125 of arranging along sub scanning direction, or 102,110,118 and 126, or 103,111,119 and 127, or 104,112,120 and 128, or 105,113,121 and 129, or 106,114,122 and 130, or 107,115,123 and 131, or 108,116,124 and 132 the interval with 18.4 μ m arrange, the interval between surface light emitting laser diode element 101-108 or 109-116 or 117-124 or the 125-132 simultaneously arranging along main scanning direction is set to 30 μ m.In addition, in each in surface light emitting laser diode element 101-132, the diameter of light-emitting zone is set to 4 μ m.
Below provide the data of the optical system using in optical scanner 500.
The two sides of coupled lens 502 is in order to lower the Representation Equation.
x＝(h
2/R)[1+{1-(1+K)(h/R)
2}]+A4·h
4+A6·h
6+A8·h
8+A10·h
10 (1)
In equation (1), it should be noted, x represents the X coordinate (optical axis direction) of lens face, h representative is from the distance (coordinate of main scanning direction) of optical axis, and R represents paraxial radius of curvature, and K is the constant of the cone, and A4, A6, A8 and A10 are high-order coefficients.
At the first surface of coupled lens 502, there is relation: R=98.97mm; K=-18.9; A4=-2.748510 × 10
-6; A6=7.513797 × 10
-7; A8=-5.817478 × 10
-8; And A10=-2.475370 × 10
-9.
At second of coupled lens 502, there is relation: R=-31.07mm; K=-0.35; A4=-1.210 × 10
-6; A6=6.782 × 10
-7; A8=2.523 × 10
-8; And A10=-4.670 × 10
-9.
In addition, coupled lens 502 has 1.5119 refractive index.Here, d1 becomes 42.39mm (d1=42.39mm), refractive index be 1.5112 and thickness be 0.3mm cover glass inserts therebetween.In addition, d2 is 3.8mm (d2=3.8mm).
The first surface of anamorphote 503 is the cylinders along sub scanning direction with magnification ratio (power), with and the second face be the cylinder along main scanning direction with magnification ratio.First surface has the radius of curvature of 55mm along sub scanning direction, second radius of curvature along have-500mm of main scanning direction.Here, d3 is that 117.2mm and d4 are 3mm (d3=117.2mm; D4=3mm).
Aperture 504 be located at deflector side scanning lens 506 1 sides of anamorphote 503 in the second face depart from 58.2mm and simultaneously than the position of the more close deflector side of the back focus of coupled lens 502 scanning lens 506.In addition, d5 is 120.2mm (d5=120.2mm).
Between anamorphote 503 and polygon prism 505 and between this polygon prism 505 and deflector side scanning lens 506, it is the sound control glass 510 that 1.9mm and refractive index are 1.5112 that thickness is set.
Polygon prism 505 is that inscribed circle radius is the four sides mirror of 7mm.In addition, there is the d6=36.7mm of relation; D7=101.9mm; D9=3mm; And d10=138.2mm.
Sound control glass 510 has 1.5112 refractive index and the thickness of 1.9mm.
Table 2 represents radius of curvature, optical element spacing and the refractive index of each assembly of the optical system that forms optical scanner 500.
Table 2
In table 2, it should be noted R
mrepresent the paraxial radius of curvature of main scanning direction, R
sthe paraxial radius of curvature that represents sub scanning direction, D represents optical element spacing, the unit of all numerical value is millimeters.
In deflector side scanning lens 506 and image-side scanning lens 507 each, its surface utilizes the aspheric surface of the non-circular arc of formula (1) restriction to form at main scanning direction, it should be noted at this, these surfaces are the special shape faces that change the radius of curvature in subscan cross section (being parallel to the imaginary cross section that optical axis and sub scanning direction are got) according to following formula (2).
This formula represents the radius of curvature C in subscan cross section
s(Y) (Y is the coordinate from the former main scanning direction of lighting measurement of optical axis), along the variation of main scanning direction, is included as the radius of curvature R of the subscan cross section restriction with optical axis in this this formula
sand coefficient B (0)
1-B
3.
C
s(Y)＝1/R
s(0)+B
1·Y+B
2·Y
2+B
3·Y
3+B
4·Y
4+B
5·Y
5+B
6·Y
6+... (2)
Table 3 represents the coefficient of the incident side of deflector side scanning lens 506.
Table 3
Table 4 represents the coefficient of the ejaculation side of deflector side scanning lens 506.
Table 4
The coefficient of the incident side of table 5 presentation video side scanning lens 507.
Table 5
The coefficient of the ejaculation side of table 6 presentation video side scanning lens 507.
Table 6
Here suppose that aperture 504 is main scanning direction and is of a size of 5.5mm and sub scanning direction and is of a size of the rectangle of 1.18mm.
Table 7 represents bundle spot size.
Table 7
Aberration is maked corrections well, and restraints the result of the table 7 of point from instruction, and bundle point is maked corrections well.
In the case, when between light source (surface-emission laser array 100B) and scanning plane when the lateral magnification of main scanning direction is designated as β m and be designated as β s along the lateral magnification of sub scanning direction, | β m|=4.9 and | β s|=2.3, and there is relation | β m| > | β s|.
Thus, can on scanning plane, realize the scan line spacings of 4800dpi.
Thus, by adopting surface-emission laser array 100B of the present invention as light source 502, can realize the scan line of high scanning density.
In addition, for optical scanner 500, light source 501 can be formed by any one of surface-emission laser array 100,100A, 100C, 100D, 100E, 200,200A, 200B, 200C, 200D and the 200E of replacement surface-emission laser array 100B.
Figure 24 is the schematic diagram that represents laser printer.
With reference to Figure 24, laser printer 600 comprises photosensitive drums 601, optical scanner 602, cleaning unit 603, charhing unit 604, developing cell 605, buanch unit 606 and fixation unit 607.
Thus, optical scanner 602, cleaning unit 603, charhing unit 604, developing cell 605, buanch unit 606 and fixation unit 607 arrange around photosensitive drums 601.
Optical scanner 602 comprises the optical scanner 500 shown in Figure 23, and utilizes multiple laser beams on photosensitive drums 601 to form sub-image according to the process illustrating above.Cleaning unit 603 is removed the toner remaining in photosensitive drums 601.
Charhing unit 604 is given the surface charging of photosensitive drums 601.Developing cell 605 is given on the surface of photosensitive drums 601 toner is provided, and the sub-image that utilizes optical scanner 602 to be formed in this photosensitive drums 601 is carried out to toner development.
Buanch unit 606 shifts toner image.The fixing toner image shifting of fixation unit 607.
In the time that laser printer 600 starts sequence of operations, charhing unit 604 is given the surface charging of photosensitive drums 601 and utilizes multiple laser beams to form sub-image in this photosensitive drums.In addition, developing cell 605 carries out toner development to the sub-image that utilizes optical scanner 602 and form, and buanch unit 606 shifts the toner image developing thus simultaneously.In addition, the fixing toner image shifting of fixation unit 607.Thus, toner image is transferred on recording paper 608, and at this, this toner image on this recording paper 608, and completes the formation of electrophotographic image via fixation unit 607 heat fixations thus.
On the other hand, be provided for eliminating the discharge cell (not shown) of the sub-image in photosensitive drums 601, and cleaning unit 603 is removed the toner remaining in photosensitive drums 601.Thus, sequence of operations completes, and can carry out to provide continuously and at high speed a large amount of electrophotographic images by repeating aforementioned process simultaneously.
It should be noted, laser printer 600 forms " imaging device ".
Figure 25 is the schematic diagram of imaging device.
With reference to Figure 25, imaging device 700 comprises photoreceptor 1Y, 1M, 1C and 1K, charhing unit 2Y, 2M, 2C and 2K, developing cell 4Y, 4M, 4C and 4K, cleaning unit 5Y, 5M, 5C and 5K, transfer charhing unit 6Y, 6M, 6C and 6K, fixation unit 710, writing unit 720 and transition zone 730.Here Y instruction yellow, M instruction magenta, C instruction cyan and K instruction black.
Photoreceptor 1Y, 1M, 1C and 1K rotate around the direction of arrow separately respectively, and provide respectively charhing unit 2Y, 2M, 2C and 2K, developing cell 4Y, 4M, 4C and 4K, transfer charhing unit 6Y, 6M, 6C and 6K and cleaning unit 5Y, 5M, 5C and 5K along this rotation direction.
Charhing unit 2Y, 2M, 2C and 2K are the charging parts that the uniform surface to photoreceptor 1Y, 1M, 1C and 1K is charged respectively.Thus, electrostatic image is formed on laying respectively on the surface separately between charhing unit 2Y, 2M, 2C and 2K and developing cell 4Y, 4M, 4C and 4K of photoreceptor 1Y, 1M, 1C and 1K via writing unit 720 (=optical scanner 500).In addition, developing cell 4Y, 4M, 4C and 4K form toner image based on electrostatic latent image on the surface of photoreceptor 1Y, 1M, 1C and 1K.In addition, transfer transfers on recording paper 740 toner image of respective color with charhing unit 6Y, 6M, 6C and 6K, and the color toner image shifting is thus fixed on this recording paper 740 via fixation unit 710.
Although there is the situation that causes coloured image suitably not aimed at due to machine error etc., but can form the imaging device 700 of video high density by changing the opening sequence of the multiple surface light emitting laser diode elements in writing unit 720 use surface-emission laser arrays, be easy to notice the problem of color misalignment.
[embodiment 3]
Figure 26 is according to the vertical view of the surface-emission laser array 100J of the embodiment of the present invention 3.
With reference to Figure 26, surface-emission laser array 100J comprises surface light emitting laser diode element 1-36, each by forming with reference to the surface light emitting laser diode elements 1 of Fig. 2 and 3 explanations or with reference to the surface light emitting laser diode element 1A of Fig. 5 and 6 explanations in previous embodiment in this surface light emitting laser diode element 1-36.
Be similar to the surface light emitting laser diode array 100 of previous embodiment, the array format two dimension that surface light emitting laser element 1-36 is listed as with six row six arranges.Therefore, six surface light emitting laser diode elements 1,7,13,19,25 and 31, or 2,8,14,20,26 and 32, or 3,9,15,21,27 and 33, or 4,10,16,22,28 and 34, or 5,11,17,23,29 and 35, or 6,12,18,24,30 and 36 arrange along sub scanning direction, simultaneously six surface light emitting laser diode element 1-6 or 7-12 or 13-18 or 19-24 or 25-30 or 31-36 arrange along main scanning direction.
Thereby, it should be noted, six surface light emitting laser diode element 1-6 that arrange along main scanning direction or 7-12 or 13-18 or 19-24 or 25-30 or 31-36 along sub scanning direction with step-type displacement setting.As a result, 36 laser beams send and do not cause coincidence from 36 surface light emitting laser diode element 1-36.
In addition, it should be noted, six surface light emitting laser diode element 1-6 or 7-12 or 13-18 or 19-24 or 25-30 or 31-36 are arranged at the central part of surface-emission laser array 100J the X1 that is spaced apart that makes two adjacent surface light emitting laser diode elements along main scanning direction, and interval between two adjacent surface light emitting laser diode elements is set to X2 (< X1) at the periphery of this surface-emission laser array 100J.Therefore, be located at the surface light emitting laser diode element 3 and 4 of the central part of surface-emission laser array 100J, or 9 and 10, or 15 and 16, or 21 and 22, or 27 and 28, or interval between 33 and 34 is set to interval X1, and be located at the surface light emitting laser diode element 1 and 2 of the periphery of surface-emission laser array 100J, or 5 and 6, or 7 and 8, or 11 and 12, or 13 and 14, or 17 and 18, or 19 and 20, or 23 and 24, or 25 and 26, or 29 and 30, or 31 and 32, or interval between 35 and 36 is set to interval X2.In addition, surface light emitting laser diode element 2 and 3, or 4 and 5, or 8 and 9, or 10 and 11, or 14 and 15, or 16 and 17, or 20 and 21, or 22 and 23, or 26 and 27, or 28 and 29, or 32 and 33, or interval between 34 and 35 is set to the interval X3 between interval X1 and interval X2.
In the case, interval X1 is set to be greater than at 36 surface light emitting laser diode elements along sub scanning direction and main scanning direction with the interval under equal intervals arranging situation, and interval X2 is set to be less than at 36 surface light emitting laser diode elements along sub scanning direction and main scanning direction with the interval under equal intervals arranging situation.In addition, interval X1 is set to for example 50 μ m, and interval X2 is set to for example 25 μ m, and interval X3 is set to for example 35 μ m.
In addition, for six surface light emitting laser diode elements 1,7,13,19,25 and 31 of arranging along sub scanning direction, or 2,8,14,20,26 and 32, or 3,9,15,21,27 and 33, or 4,10,16,22,28 and 34, or 5,11,17,23,29 and 35, or interval between 6,12,18,24,30 and 36, two adjacent surface light emitting laser diode elements is set to constant and be interval d.Here, d is for example set to 30 μ m (d=30 μ m).
For this structure, it should be noted, six straight line L1-L6 that draw perpendicular to the straight line 40 extending along sub scanning direction from the center separately of six surface light emitting laser diode element 1-6 along main scanning direction arrangement are formed along sub scanning direction has equal interval C, wherein, C is confirmed as C=d/6.In the example shown in Figure 26, C=30/6=5 μ m.
Similarly, six straight lines drawing perpendicular to straight line 40 from the center separately of six surface light emitting laser diode element 7-12 arranging along main scanning direction equally or 13-18 or 19-24 or 25-30 or 31-36 are formed along sub scanning direction has the same intervals equating with interval C.
Therefore, for surface-emission laser array 100J, six surface light emitting laser diode elements 1, 7, 13, 19, 25 and 31, or 2, 8, 14, 20, 26 and 32, or 3, 9, 15, 21, 27 and 33, or 4, 10, 16, 22, 28 and 34, or 5, 11, 17, 23, 29 and 35, or 6, 12, 18, 24, 30 and 36 arrange with the interval d equating, and six surface light emitting laser diode element 1-6 or 7-12 or 13-18 or 19-24 or 25-30 or 31-36 are configured to make the interval between two adjacent surface light emitting laser diode elements to increase towards central part from the periphery of this surface-emission laser array 100J.
Therefore, for surface-emission laser array 100J, interval in 6 surface light emitting laser diode elements arranging along main scanning direction between two surface light emitting laser diode elements changes according to the position at main scanning direction, and compared with the periphery of surface-emission laser array 100J therein heart portion get higher value.
In an example, the interval between surface light emitting laser diode element 13-14 (periphery) is narrower than the interval between surface light emitting laser diode element 15-16 (central part).In addition, the interval between surface light emitting laser diode element 26 and 31 (periphery) is narrower than the interval between surface light emitting laser diode element 16-21 (central part).
Result, the thermal effect to being located at the surface light emitting laser diode element in its central part being caused by the surface light emitting laser diode element being located in the periphery of surface-emission laser array 100J reduces, and with compare with the situation that main scanning direction arranges 36 surface light emitting laser diode elements with identical interval along sub scanning direction, when 36 surface light emitting laser diode element 1-36 in this surface-emission laser array 100J work simultaneously, make the more homogeneous of Temperature Distribution in this surface-emission laser array 100J.Thus, can make the output characteristic homogeneous of 36 surface light emitting laser diode elements.In addition, the temperature of tending to the surface light emitting laser diode element 15,16,21 and 22 that experiences steep temperature rise in surface-emission laser array 100J can be reduced, and the life-span of this surface-emission laser array 100J can be extended.
In addition, because interval X1 is set to be greater than in the situation that 36 surface light emitting laser diode elements are arranged with equal intervals along sub scanning direction and main scanning direction the interval between surface light emitting laser diode element and because interval X2 is set to be less than at 36 surface light emitting laser diode elements along sub scanning direction and main scanning direction with the interval under equal intervals arranging situation, so the situation of arranging with equal intervals with main scanning direction along sub scanning direction with 36 surface light emitting laser diode elements is compared, the present embodiment can reduce the area being occupied by surface light emitting laser diode element 1-36.Result, write use light source in the situation that as optics at surface light emitting laser diode array 100J, compare with the situation that 36 surface light emitting laser diode elements provide with equal intervals with main scanning direction along sub scanning direction, can reduce the aberration of for example collimating lens of optical system.In addition, because can suppress the surface light emitting laser diode element 15 of its central part in the area that reduces surface-emission laser array 100J, 16,21 and 22 heat up, so can suppress the aberration effects of for example lens of optical system, and utilize surface light emitting laser diode array 100J to form picture rich in detail as imaging device.In addition, the life of surface-emission laser array 100J, this makes it possible to recycle optics and writes use optical unit simultaneously, and can reduce carrying capacity of environment.
For the present embodiment, at main scanning direction, the interval between two adjacent surface light emitting laser diode elements is according to the change in location of main scanning direction, but for those surface light emitting laser diode elements of arranging along sub scanning direction, interval is constant.Therefore, six surface light emitting laser diode element 1-6 or 7-12 or 13-18 or 19-24 or 25-30 or 31-36 generally arrange along sigmoid curve at main scanning direction.
[embodiment 4]
Figure 27 is according to the vertical view of the surface-emission laser array K of the embodiment of the present invention 4.
With reference to Figure 27, surface-emission laser array 100K comprises surface light emitting laser diode element 201-236, and the structure of this surface light emitting laser diode element 201-236 is identical with the surface light emitting laser diode element 1A of the surface light emitting laser diode element 1 of Fig. 2 and 3 or Fig. 5 and 6.
Here, two surface light emitting laser diode elements 219 and 226, or 211 and 218, or five surface light emitting laser diode elements 203, 209, 216, 224 and 231, or 204, 210, 217, 225 and 232, or 205, 212, 220, 227 and 233, or six surface light emitting laser diode elements 201, 207, 214, 222, 229 and 235, or 202, 208, 215, 223, 230 and 236 arrange along sub scanning direction, four surface light emitting laser diode element 201-204 simultaneously, 233-236, or seven surface light emitting laser diode element 205-211, 212-218, 219-225 and 226-232 arrange along main scanning direction.
Thereby, it should be noted four surface light emitting laser diode element 201-204 that arrange along main scanning direction or 233-236, or seven surface light emitting laser diode element 205-211,212-218,219-225 and 226-232 along sub scanning direction with step-type displacement setting.As a result, 36 laser beams send and do not cause coincidence from 36 surface light emitting laser diode element 201-236.
Between four surface light emitting laser diode element 201-204 or 233-236 along the interval of main scanning direction, or seven surface light emitting laser diode element 205-211, or 212-218, or 219-225, or be set to equal intervals X along the interval of main scanning direction between 226-232.Here, interval X is set to for example 30 μ m.
In addition, at two surface light emitting laser diode elements 219 and 226, or 211 and 218, or five surface light emitting laser diode elements 203, 209, 216, 224 and 231, or 204, 210, 217, 225 and 232, or 205, 212, 220, 227 and 233, or six surface light emitting laser diode elements 201, 207, 214, 222, 229 and 235, or 202, 208, 215, 223, in 230 and 236, interval between two adjacent surface light emitting laser diode elements of the central part of surface-emission laser array 100K is set to interval d1, and at periphery, interval is set to interval d2.Therefore, be located at the surface light emitting laser diode element 212 and 220 of the central part of surface-emission laser array 100K, or 213 and 221, or 214 and 222, or 215 and 223, or 216 and 224, or interval between 217 and 225 is set to d1, and be located at the surface light emitting laser diode element 201 and 207 of the periphery of surface-emission laser array 100K, or 202 and 208, or 203 and 209, or 204 and 210, or 227 and 233, or 228 and 234, or 229 and 235, or interval between 230 and 236 is set to d2.In addition, surface light emitting laser diode element 205 and 212, or 206 and 213, or 207 and 214, or 208 and 215, or 209 and 216, or 210 and 217, or 211 and 218, or 219 and 226, or 220 and 227, or 221 and 228, or 222 and 229, or 223 and 230, or 224 and 231, or interval between 225 and 232 is set to the interval d3 between interval d1 and interval d2.
In the case, interval d1 is set to be greater than at 36 surface light emitting laser diode elements along sub scanning direction and main scanning direction with the interval under equal intervals arranging situation, and interval d2 is set to be less than at 36 surface light emitting laser diode elements along sub scanning direction and main scanning direction with the interval under equal intervals arranging situation.In addition, interval d1 is set to for example 40 μ m, and interval d2 is set to for example 30 μ m, and interval d3 is set to for example 35 μ m.
For this structure, it should be noted, four straight line L7-L10 that draw perpendicular to the straight line 41 extending along sub scanning direction from the center separately of four surface light emitting laser diode element 201-204 along main scanning direction arrangement are formed along sub scanning direction has equal interval C.
Similarly, from seven surface light emitting laser diode element 205-211 that arrange along main scanning direction equally, 212-218, or 219-225, or seven straight lines drawing perpendicular to straight line 41 of the center separately of 226-232 are formed along sub scanning direction and have the same intervals equating with interval C.
Similarly, four straight lines drawing perpendicular to straight line 41 from the center separately of same four surface light emitting laser diode element 233-236 that arrange along main scanning direction are formed along sub scanning direction has the same intervals equating with interval C.
Arrange the surface light emitting laser diode array 100K that forms eight row along main scanning direction for multiple surface light emitting laser diode elements, interval C is confirmed as d1/8=40/8=5 μ m.
For surface-emission laser array 100K, along main scanning direction arrange surface light emitting laser diode element quantity basis sub scanning direction position and change.
Therefore, for surface-emission laser array 100K, four surface light emitting laser diode element 201-204 that arrange along main scanning direction or 233-236, and seven surface light emitting laser diode element 205-211, or 212-218, or 219-225, or 226-232 arranges with the interval X equating, and at two surface light emitting laser diode elements 219 and 226, or 211 and 218, or five surface light emitting laser diode elements 203, 209, 216, 224 and 231, or 204, 210, 217, 225 and 232, or 205, 212, 220, 227 and 233, or six surface light emitting laser diode elements 201, 207, 214, 222, 229 and 235, or 202, 208, 215, 223, in 230 and 236 array, surface light emitting laser diode element is arranged in along sub scanning direction the interval making between two adjacent surface light emitting laser diode elements and increases towards central part from the periphery of this surface-emission laser array 100K.
Therefore, for surface light emitting laser diode array 100K, two surface light emitting laser diode elements 219 and 226, or 211 and 218, or five surface light emitting laser diode elements 203, 209, 216, 224 and 231, or 204, 210, 217, 225 and 232, or 205, 212, 220, 227 and 233, or six surface light emitting laser diode elements 201, 207, 214, 222, 229 and 235, or 202, 208, 215, 223, interval in 230 and 236 array between surface light emitting laser diode element is set to and makes this interval large at its periphery at the central part ratio of surface light emitting laser diode array 100K.
In an example, the interval between surface light emitting laser diode element 213-214 (periphery) is narrower than the interval between surface light emitting laser diode element 215-221 (central part).
Result, the thermal effect to being located at the surface light emitting laser diode element in its central part being caused by the surface light emitting laser diode element being located in the periphery of surface-emission laser array 100K reduces, and with compare with the situation that main scanning direction arranges 36 surface light emitting laser diode elements with identical interval along sub scanning direction, when 36 surface light emitting laser diode element 201-236 in this surface-emission laser array 100K work simultaneously, make the more homogeneous of Temperature Distribution in this surface-emission laser array.Thus, can make the output characteristic homogeneous of 36 surface light emitting laser diode elements.In addition, the temperature of tending to the surface light emitting laser diode element 214,215,222 and 223 that experiences steep temperature rise in surface-emission laser array 100K can be reduced, and the life-span of this surface-emission laser array 100K can be extended.
In addition, because interval d1 is set to be greater than at 36 surface light emitting laser diode elements and is narrower than at 36 surface light emitting laser diode elements along sub scanning direction and main scanning direction with the interval under equal intervals arranging situation with the interval under equal intervals arranging situation and because interval d2 is set to along sub scanning direction and main scanning direction, so the situation of arranging with equal intervals with main scanning direction along sub scanning direction with 36 surface light emitting laser diode elements is compared, the present embodiment can reduce the area being occupied by surface light emitting laser diode element 201-236.Result, write use light source in the situation that as optics at surface light emitting laser diode array 100K, compare with the situation that 36 surface light emitting laser diode elements provide with equal intervals with main scanning direction along sub scanning direction, can reduce the aberration of for example collimating lens of optical system.In addition, because can suppress the surface light emitting laser diode element 214,215,222 and 223 of its central part in the area that reduces surface-emission laser array 100K heats up, so can suppress the aberration effects of for example lens of optical system, and utilize surface light emitting laser diode array 100K to form picture rich in detail as imaging device.In addition, the life of surface-emission laser array 100K, this makes it possible to recycle optics and writes use optical unit simultaneously, and can reduce carrying capacity of environment.
Figure 28 is another vertical view according to the surface-emission laser array of the embodiment of the present invention 4.Here, the surface-emission laser array of embodiment 4 can be the surface-emission laser array 100L shown in Figure 28.
With reference to Figure 28, surface-emission laser array 100L has with surface-emission laser array 100K and similarly constructs, except the surface light emitting laser diode element 219 of the surface-emission laser array 100K shown in Figure 27 is moved into the downside of surface light emitting laser diode element 231 in diagram plane, and surface light emitting laser diode element 212 and 220, or 213 and 221, or 214 and 222, or 215 and 223, or 216 and 224, or interval between 217 and 225 is set to interval d3.For surface-emission laser array 100L, the same acquisition effect identical with surface-emission laser array 100K.
Each in surface light emitting laser diode element 201-236 shown in Figure 27 and 28 formed by the surface light emitting laser diode element 1A shown in the surface light emitting laser diode element 1 shown in Fig. 2 and 3 or Fig. 5 and 6.
In addition, the present embodiment is identical with embodiment 4.
[embodiment 5]
Figure 29 is according to the vertical view of the surface-emission laser array M of the embodiment of the present invention 5.
With reference to Figure 29, the surface-emission laser array 100M of embodiment 5 comprises surface light emitting laser diode element 301-336.
It should be noted, surface-emission laser array 100M has with surface-emission laser array 100K (referring to Figure 27) and similarly constructs, except this surface-emission laser array 100M is set to interval X1 and is set to the X2 of interval at its periphery at the central part of this surface-emission laser array 100M along the interval between the surface light emitting laser diode element of main scanning direction.
Therefore, for surface-emission laser array 100M, the position of the quantity basis sub scanning direction of the surface light emitting laser diode element of arranging along main scanning direction and changing, the position of the quantity basis main scanning direction of the surface light emitting laser diode element of simultaneously arranging along sub scanning direction and changing.
Therefore, for surface-emission laser array 100M, be located between the surface light emitting laser diode element of central part along the interval of in-plane at main scanning direction and sub scanning direction and all become and be greater than the interval along in-plane between the surface light emitting laser diode element that is located at periphery.
As a result, compare with surface-emission laser array 100J and the arbitrary of 100K, the surface light emitting laser diode element being located in periphery reduces the thermal effect that is located at the surface light emitting laser diode element in central part.Thus, the characteristic homogeneity of 36 surface light emitting laser diode element 301-336 further improves.In addition, because the present invention reduces the temperature of tending to the surface light emitting laser diode element 314,315,322 and 323 that experiences steep temperature rise in surface-emission laser array 100M, can extend the life-span of this surface-emission laser array 100M.In addition, because can suppress the surface light emitting laser diode element 314,315,322 and 323 of its central part in the area that reduces surface-emission laser array 100M heats up, so can suppress the aberration effects of for example lens of optical system, and utilize surface light emitting laser diode array 100M to form picture rich in detail as imaging device.In addition, the life of surface-emission laser array 100M, this makes it possible to recycle optics and writes use optical unit simultaneously, and can reduce carrying capacity of environment.
Figure 30 is the vertical view representing according to another structure of the surface-emission laser array 100M of the embodiment of the present invention 5.
Here, the surface-emission laser array of embodiment 5 can be the surface-emission laser array 100N shown in Figure 30.
With reference to Figure 30, surface-emission laser array 100N has with surface-emission laser array 100M and similarly constructs, except the surface light emitting laser diode element 319 of the surface-emission laser array 100M shown in Figure 29 is moved into the downside of surface light emitting laser diode element 331 in diagram plane, and surface light emitting laser diode element 312 and 320, or 313 and 321, or 314 and 322, or 315 and 323, or 316 and 324, or interval between 317 and 325 is set to interval d3.For surface-emission laser array 100N, the same acquisition effect identical with surface-emission laser array 100M.
Each in surface light emitting laser diode element 301-336 shown in Figure 29 and 30 formed by the surface light emitting laser diode element 1A shown in the surface light emitting laser diode element 1 shown in Fig. 2 and 3 or Fig. 5 and 6.
In addition, the present embodiment is identical with embodiment 5.
[embodiment 6]
Figure 31 is according to the vertical view of the surface-emission laser array 100O of the embodiment of the present invention 6.
With reference to Figure 31, the surface-emission laser array 100O of embodiment 6 comprises surface light emitting laser diode element 401-436.
The array format two dimension that surface light emitting laser element 401-436 is listed as with six row six arranges.Therefore, six surface light emitting laser diode elements 401,407,413,419,425 and 431, or 402,408,414,420,426 and 432, or 403,409,415,421,427 and 433, or 404,410,416,422,428 and 434, or 405,411,417,423,429 and 435, or 406,412,418,424,430 and 436 arrange along sub scanning direction with zigzag pattern, six surface light emitting laser diode element 401-406 or 407-412 or 413-418 or 419-424 or 425-430 or 431-436 arrange along main scanning direction simultaneously.
Thereby, it should be noted, six surface light emitting laser diode element 401-406 that arrange along main scanning direction or 407-412 or 413-418 or 419-424 or 425-430 or 431-436 along sub scanning direction with step-type displacement setting.As a result, 36 laser beams send and do not cause coincidence from 36 surface light emitting laser diode element 401-436.
In addition, it should be noted, six surface light emitting laser diode element 401-406 or 407-412 or 413-418 or 419-424 or 425-430 or 431-436 are arranged at the central part of surface-emission laser array 100O the X1 that is spaced apart that makes two adjacent surface light emitting laser diode elements along main scanning direction, and interval between two adjacent surface light emitting laser diode elements is set to X2 at the periphery of this surface-emission laser array 100O.Therefore, be located at the surface light emitting laser diode element 403 and 404 of the central part of surface-emission laser array 100O, or 409 and 410, or 415 and 416, or 421 and 422, or 427 and 428, or interval between 433 and 434 is set to interval X1, and be located at the surface light emitting laser diode element 401 and 402 of the periphery of surface-emission laser array 100O, or 405 and 406, or 407 and 408, or 411 and 412, or 413 and 414, or 417 and 418, or 419 and 420, or 423 and 424, or 425 and 426, or 429 and 430, or 431 and 432, or interval between 435 and 436 is set to X2.In addition, surface light emitting laser diode element 402 and 403, or 404 and 405, or 408 and 409, or 410 and 411, or 414 and 415, or 416 and 417, or 420 and 421, or 422 and 423, or 426 and 427, or 428 and 429, or 432 and 433, or interval between 434 and 435 is set to the interval X3 between interval X1 and interval X2.
For this structure, it should be noted, six straight line L11-L16 that draw perpendicular to the straight line 42 extending along sub scanning direction from the center separately of six surface light emitting laser diode element 401-406 along main scanning direction arrangement are formed along sub scanning direction has equal interval C, wherein, C is confirmed as C=d/6.
Similarly, six straight lines drawing perpendicular to straight line 42 from the center separately of six surface light emitting laser diode element 407-412 arranging along main scanning direction equally or 413-418 or 419-424 or 425-430 or 431-436 are formed along sub scanning direction has the same intervals equating with interval C.
Between each two adjacent surface light emitting laser diode elements that are located at six surface light emitting laser diode element 407-412 that arrange along main scanning direction in the second row in six surface light emitting laser diode element 401-406 that arrange along main scanning direction in the first row.
More specifically, surface light emitting laser diode element 401 is located between surface light emitting laser diode element 407 and 408, surface light emitting laser diode element 402 is located between surface light emitting laser diode element 408 and 409, surface light emitting laser diode element 403 is located between surface light emitting laser diode element 409 and 410, surface light emitting laser diode element 404 is located between surface light emitting laser diode element 410 and 411, and surface light emitting laser diode element 405 is located between surface light emitting laser diode element 411 and 412.
Same, in other row along six surface light emitting laser diode element 407-412 of main scanning direction setting or 413-418 or 419-424 or 425-430 or 431-436 and by six surface light emitting laser diode element 401-406 similar arrange.
Therefore, for surface light emitting laser diode array 100O, in the primary importance of sub scanning direction along between the each lighting at two sides laser diode of being located at the multiple surface light emitting laser diode elements that arrange along main scanning direction in the second place adjacent with this primary importance of sub scanning direction in multiple surface light emitting laser diode elements of main scanning direction setting.
It should be noted in addition, surface-emission laser array 100O have with surface-emission laser array 100J (referring to Figure 26) in be located at the second row, fourth line and the 6th row six surface light emitting laser diode elements in diagram plane to left displacement and the suitable structure of array.
As a result, for surface-emission laser array 100O, the interval W1 being located between two surface light emitting laser diode elements of central part is wider than the interval W2 between two surface light emitting laser diode elements that are located at periphery.
Therefore, for surface-emission laser array 100O, be located between the surface light emitting laser diode element of central part along the interval of in-plane at main scanning direction and sub scanning direction and all become and be greater than the interval along in-plane between the surface light emitting laser diode element that is located at periphery.
As a result, compare with surface-emission laser array 100J and the arbitrary of 100K, the surface light emitting laser diode element being located in periphery reduces the thermal effect that is located at the surface light emitting laser diode element in central part.Thus, the characteristic homogeneity of 36 surface light emitting laser diode element 401-436 further improves.In addition, the temperature of tending to the surface light emitting laser diode element 415,416,422 that experiences steep temperature rise in surface-emission laser array 100O can be reduced, and the life-span of this surface-emission laser array 100O can be extended.In addition, because can suppress the surface light emitting laser diode element 415,416,422 of its central part in the area that reduces surface-emission laser array 100O heats up, so can suppress the aberration effects of for example lens of optical system, and utilize surface light emitting laser diode array 100O to form picture rich in detail as imaging device.In addition, the life of surface-emission laser array 100O, this makes it possible to recycle optics and writes use optical unit simultaneously, and can reduce carrying capacity of environment.
Although mobile six surface light emitting laser diode elements that are located at six surface light emitting laser diode elements of the first row, the third line and fifth line or are located at the second row, fourth line and the 6th row have been described above, but the invention is not restricted to this particular configuration, on the contrary, six surface light emitting laser diode elements in every row can move towards different directions according to each row.
In addition, the present embodiment is identical with embodiment 3.
[embodiment 7]
Figure 32 is according to the vertical view of the surface-emission laser array 100P of the embodiment of the present invention 7.
With reference to Figure 32, the surface-emission laser array 100P of embodiment 7 comprises surface light emitting laser diode element 801-836.
Here, three surface light emitting laser diode elements 813, 819 and 825, or 812, 818 and 824 and five surface light emitting laser diode elements 801, 807, 821, 827 and 833, or 802, 808, 815, 828 and 834, or 803, 809, 822, 829 and 835, or 804, 810, 816, 830 and 836, or 805, 811, 817, 823 and 831, or 806, 814, 820, 826 and 832 arrange along sub scanning direction, while five surface light emitting laser diode element 801-805 or 832-836, six surface light emitting laser diode element 813-818 or 819-824, and seven surface light emitting laser diode element 806-812 or 825-831 arrange along main scanning direction.
Thereby it should be noted, five surface light emitting laser diode element 801-805 that arrange along main scanning direction or 832-836, six surface light emitting laser diode element 813-818 or 819-824, and seven surface light emitting laser diode element 806-812 or 825-831 along sub scanning direction with step-type displacement setting.As a result, 38 laser beams send and do not cause coincidence from 38 surface light emitting laser diode element 801-836.
Be located at the surface light emitting laser diode element 801-814 of the periphery of surface-emission laser array 100P, 816-821 and 823-836 are formed has equal interval X.
It should be noted in addition, at the central part of surface-emission laser array 100P, between two adjacent surface light emitting laser diode elements, be set to the interval along in-plane between the two adjacent surface light emitting laser diode elements that are wider than periphery along the interval of in-plane.
In an example, the interval between surface light emitting laser diode element 803-804 (periphery) is narrower than the interval between surface light emitting laser diode element 815-816 (central part).
Therefore, surface-emission laser array 100P is equivalent to so a kind of surface-emission laser array, wherein, multiple surface light emitting laser diode elements move to periphery along main scanning direction with the interval X arrangement equating and a part of surface light emitting laser diode element that is positioned at central part.
More specifically, surface-emission laser array 100P is equivalent to so a kind of surface-emission laser array, wherein, surface light emitting laser diode element between the surface light emitting laser diode element 814 and 815 of arranging along main scanning direction, surface light emitting laser diode element between the surface light emitting laser diode element 815 and 816 of arranging along main scanning direction, surface light emitting laser diode element between the surface light emitting laser diode element 821 and 822 of arranging along main scanning direction, and surface light emitting laser diode element between the surface light emitting laser diode element 822 and 823 of arranging along main scanning direction is located at the neighboring area of this surface-emission laser array.
Therefore, for surface-emission laser array 100P, be located between the surface light emitting laser diode element of central part along the interval of in-plane at main scanning direction and sub scanning direction and all become and be greater than the interval along in-plane between the surface light emitting laser diode element that is located at periphery.
In other words,, for this structure, surface light emitting laser diode element is sparse at its periphery at the central part ratio of surface-emission laser array.
As a result, compare with surface-emission laser array 100J and the arbitrary of 100K, the surface light emitting laser diode element being located in periphery reduces the thermal effect that is located at the surface light emitting laser diode element in central part.Thus, the characteristic homogeneity of 36 surface light emitting laser diode element 801-836 further improves.In addition, the temperature of tending to the surface light emitting laser diode element 815,816,822 that experiences steep temperature rise in surface-emission laser array 100P can be reduced, and the life-span of this surface-emission laser array 100P can be extended.In addition, because can suppress the surface light emitting laser diode element 815,816,822 of its central part in the area that reduces surface-emission laser array 100P heats up, so can suppress the aberration effects of for example lens of optical system, and utilize surface light emitting laser diode array 100P to form picture rich in detail as imaging device.In addition, the life of surface-emission laser array 100P, this makes it possible to recycle optics and writes use optical unit simultaneously, and can reduce carrying capacity of environment.
Although be illustrated for the situation that comprises 36 surface light emitting laser diode elements in surface-emission laser array in previous embodiment 3-7, the invention is not restricted to this particular case, surface-emission laser array can comprise and exceedes 36 surface light emitting laser diode elements.In addition, surface light emitting laser diode element can arrange as required, as long as its interval is dropped in the scope of embodiment 3-7.
[embodiment 8]
Then, illustrate according to the surface-emission laser array 100Q of embodiment 8 with reference to Figure 33-37.
Surface-emission laser array 100Q comprises 40 surface light emitting laser diode elements in this manner, which is for the multiple row surface light emitting laser diode element that extends and comprise in it multiple surface light emitting laser diode elements along the direction corresponding with sub scanning direction (being simply appointed as below S direction) is provided, and which is that eight such row provide to form ranks form along the direction corresponding with main scanning direction (being simply appointed as below M direction).
In S direction, 40 surface light emitting laser diode elements are provided with equal intervals C.
Here it should be noted, for mutual difference multiple row, every width figure (Figure 33-37) from left to right given side light emitting laser diode element classify first row L1, secondary series L2, the 3rd row L3, the 4th row L4, the 5th row L5, the 6th row L6, the 7th row L7 and the 8th row L8 as.This is just to convenient.
In M direction, interval between first row L1 and secondary series L2 is set to X4, interval between secondary series L2 and the 3rd row L3 is set to X3, interval between the 3rd row L3 and the 4th row L4 is set to X2, interval between the 4th row L4 and the 5th row L5 is set to X1, interval between the 5th row L5 and the 6th row L6 is set to X2, interval between the 6th row L6 and the 7th row L7 is set to X3, and the 7th row L7 be set to X4 with the 8th interval being listed as between L8, wherein keep being related to X1 > X2 > X3 > X4.Therefore, be set to be greater than the interval between two adjacent columns at the peripheral side of surface light emitting laser diode element array at the interval between two adjacent columns surface light emitting laser diode elements of portion of array center.
Figure 33 is according to the vertical view of the surface-emission laser array 100Q of the embodiment of the present invention 8.
For surface-emission laser array, 100Q is visible, provides eight row surface light emitting laser diode elements along M direction, wherein, comprises five surface light emitting laser diode elements arranging with interval d along S direction in every row.Therefore, columns is greater than the quantity of the surface light emitting laser diode element that forms row.
In addition, in two adjacent columns, the interval between two immediate surface light emitting laser diode elements is set to C.
More specifically, X1=56 μ m, X2=46 μ m, X3=36 μ m, X4=26 μ m, d=35.6 μ m, and C=4.4 μ m.Interval d is set to be less than interval X1.
Although interval d is greater than interval X4, the invention is not restricted to this relation.Adopt this structure, heat is interfered and is heated up thus at the periphery of surface-emission laser array than little at central part, therefore interval d can be set as being less than interval X1.
Figure 34 is according to the vertical view of the surface-emission laser array 100R of the embodiment of the present invention 8.
For this example, first row L1 is formed by six surface light emitting laser diode elements, secondary series L2 is formed by five surface light emitting laser diode elements, the 3rd row L3 is formed by four surface light emitting laser diode elements, the 4th row L4 is formed by five surface light emitting laser diode elements, the 5th row L5 is formed by five surface light emitting laser diode elements, the 6th row L6 is formed by four surface light emitting laser diode elements, the 7th row L7 is formed by five surface light emitting laser diode elements, and the 8th row L8 is formed by six surface light emitting laser diode elements.
In addition, in two adjacent columns, the interval between two immediate surface light emitting laser diode elements is set to C.
In addition, the interval between the multiple surface light emitting laser diode elements in every row can be unequal.
More specifically, interval X1, X2, X3, X4 and C are set to X1=50 μ m, X2=45.5 μ m, X3=38.5 μ m, X4=26 μ m, and C=4.4 μ m.
For surface-emission laser array 100R, can reduce to be positioned at the component temperature (the especially temperature of active layer) of this portion of array center in the time forming the surface light emitting laser diode element work of this array.
Figure 35 is according to the vertical view of the surface-emission laser array 100S of the embodiment of the present invention 8.
For surface-emission laser array, 100S is visible, provides eight row surface light emitting laser diode elements along M direction, wherein, comprises five surface light emitting laser diode elements arranging with interval d along S direction in every row.Therefore, columns is greater than the quantity of the surface light emitting laser diode element that forms row.
In addition, in two adjacent columns, the interval between two immediate surface light emitting laser diode elements is set to be greater than C.Therefore,, for surface-emission laser array 100S, surface light emitting laser diode element is arranged to checkerboard pattern.
In surface-emission laser array 100S, it should be noted the most close in every row+S side surface light emitting laser diode element position in order: first row L1 → three row L3 → five row L5 → seven row L7 → secondary series L2 → four row L4 → six row L6 → eight row L8 moves to-S lateral deviation, but the invention is not restricted to this layout, also the situation of surface-emission laser array 100T that can be shown in Figure 36, the position of the surface light emitting laser diode element of the most close in every row+S side is in order: first row L1 → seven row L7 → three row L3 → five row L5 → secondary series L2 → eight row L8 → four row L4 → six row L6 is to-S direction skew.This means that skew order can be arbitrarily.
For surface-emission laser array 100S and surface-emission laser array 100T, multiple surface light emitting laser diode elements can be located at than in the large area of the situation of surface-emission laser array 100Q or 100R, therefore can further suppress to heat up.
As explanation before this, for embodiment 8,40 surface light emitting laser diode element two dimensions arrange, wherein, be provided with eight row surface light emitting laser diode elements, in every row, comprise at least two surface light emitting laser diode elements of arranging along S direction, make these eight row along the M direction setting perpendicular to S direction, wherein, be set to be greater than the interval between two adjacent columns that forming the eight array circumferences that are listed as at the interval between two adjacent columns of portion of array center that form eight row.
So, even if multiple surface light emitting laser diode elements are driven simultaneously, the thermal impact to the surface light emitting laser diode element in central part being produced by the surface light emitting laser diode element being located in the periphery of surface-emission laser array also reduces, and with compare with the situation that S direction arranges multiple surface light emitting laser diode elements with the interval of homogeneous along M direction, the intensification that is positioned at the surface light emitting laser diode element of this surface-emission laser array central part is suppressed.Thus, can make the output characteristic homogeneous of each surface light emitting laser diode element.In addition, because the temperature of the surface light emitting laser diode element that tends to experience steep temperature rise in surface-emission laser array reduces, can extend the life-span of this surface-emission laser array.
It should be noted in addition, 40 surface light emitting laser diode elements arrange with the interval equating along S direction, and columns is greater than the quantity of the surface light emitting laser diode element that forms row.In addition, between the surface light emitting laser diode element in row, be less than the largest interval of multiple surface light emitting laser diode elements along M direction along the interval of S direction.
Thus, can increase writing density, reducing the hot interference effect between surface light emitting laser diode element simultaneously and guaranteeing provides interconnection pattern required space for each surface light emitting laser diode element.
Make to comprise eight surface light emitting laser diode elements arranging with equal intervals d along S direction in every row to there is the C=35.2/5=7.04 of relation μ m in the case of form five row surface light emitting laser diode elements along M direction.Therefore, interval C becomes the interval C in the surface-emission laser array that is greater than embodiment 8.
Then, by the analog result that is illustrated as the intensification in prediction surface-emission laser array and carry out.
In the case of the independent drive surface light emitting laser of the constant current diode element with 4.26mA (voltage 2.55V), obtain the optics output of 1.7mW.In addition, at room temperature homogeneous drives in the experiment of each surface light emitting laser diode element, is estimated that the temperature of the active layer of the surface light emitting laser diode element of the portion of array center that is positioned at the most serious heat interference of generation has risen approximately 78 DEG C by the side-play amount of viewed oscillation wavelength.
Therefore, produce the supposition of identical heat based on 40 surface light emitting laser diode elements and simulate the Temperature Distribution of the active layer of these surface light emitting laser diode elements by making corrections so that the temperature of active layer becomes the viewed temperature that those are positioned at the surface light emitting laser diode element of portion of array center and the most serious heat interference of experience and intensification.
(1) ten row surface light emitting laser diode element arrange with equal intervals X along M direction and every row in comprise the situation (with reference to Figure 37) of four surface light emitting laser diode elements of arranging with equal intervals d along S direction.
Here, interval d is set to 44 μ m, and interval X is set to 30 μ m simultaneously.Therefore, C becomes 4.4 μ m.
Figure 38 represents the result of this situation.Visible with reference to Figure 38, between 40 surface light emitting laser diode elements, there is the intensification difference of approximately 13 DEG C and heat up the most severe at the surface light emitting laser diode element that is positioned at portion of array center.
(2) situation of surface-emission laser array 100Q (with reference to Figure 39).
In the case, d is set to 35.2 μ m, and X1 is set to 50 μ m, and X2 is set to 46 μ m, and X3 is set to 38 μ m, and X4 is set to 26 μ m.Therefore, C becomes 4.4 μ m.
Figure 40 represents the result of this situation.Visible with reference to Figure 40, the most severe intensification is 75.1 DEG C, and this is lower than situation (1).
It should be noted, in the case of forming eight row surface light emitting laser diode elements along M direction with equal intervals, every row are comprised four surface light emitting laser diode elements arranging with equal intervals d along S direction, maximum intensification is 77.6 DEG C.The present embodiment structure of these instruction heterogeneity ground installation surface light emitting laser diode element row is effective for the maximum temperature that reduces surface-emission laser array.
(3) situation of surface-emission laser array 100R (with reference to Figure 41).
In the case, interval X1, X2, X3, X4 and C are set to X1=50 μ m, X2=45.5 μ m, X3=38.5 μ m, X4=26 μ m, and C=4.4 μ m.
Figure 42 represents the result of this situation.Visible with reference to Figure 42, the most severe intensification is 74.5 DEG C, and this is lower than situation (2).
Generally, in the time that temperature reduces by 10 DEG C, the life of surface light emitting laser diode element is twice.Therefore,, for the cooling of 3.5 DEG C, predicted life extends approximately 30%.
It should be noted, can utilize relational expression rough calculation caloric value (W) below:
Caloric value (W)=driving voltage (V) × electric current (I)-optics output (W)
Although driven under the same terms and each surface light emitting laser diode element carry out this simulation produce identical heat in the situation that at all surface light emitting laser diode elements, but it should be noted, optics output is along with the hot interference degrees in actual surface-emission laser array increases and reduces.Therefore, the caloric value of the surface light emitting laser diode element of estimated center portion will increase, thereby compared with result of calculation, Temperature Distribution should further increase.Therefore, the present embodiment should be much larger than calculated value by the cooling degree improving the layout of the surface light emitting laser diode element in surface-emission laser array and obtain, and thus, the life effect of surface-emission laser array should be much larger than result of calculation.
Although the present embodiment has been described for the rounded situation of the each desk-top portion of surface-emission laser array above, but the present invention is never limited to this particular configuration, this desk-top portion can ovalize, any in square, rectangle, polygon except quadrangle etc.
In addition, although the situation that previous embodiment has been arranged formation row with regard to surface light emitting laser diode element along S direction is illustrated, but the invention is not restricted to this structure, but also comprise the situation of at least one elements relative in row other Component Displacement in these row.
[application examples]
Figure 43 represents the signal structure according to the laser printer 800 of an embodiment of the present invention.
Laser printer 800 comprises optical scanner 1000, photosensitive drums 905, electrostatic charger 1002, developer roll 1003, toner Cartridge 1004, cleaning doctor 1005, paper feeding tray 1006, feed roll 1007, stop roller to 1008, shift charger 1011, fixing roller 1009, exit roller 1012, discharge tray 1010 etc.
In photosensitive drums 905, carry photosensitive layer.Therefore, the surface of photosensitive drums 905 provides scanning plane.Here suppose that photosensitive drums 905 is along the direction of arrow rotation shown in Figure 25.
Electrostatic charger 1002, developer roll 1003, transfer charger 1011 and cleaning doctor 1005 are located near photosensitive drums 905.Thus, electrostatic charger 1002, developer roll 1003, transfer charger 1011 and cleaning doctor 1005 are in order: electrostatic charger 1002 → developer roll 1003 → transfer charger 1011 → cleaning doctor 1005 is along the rotation direction setting of photosensitive drums 905.
Electrostatic charger 1002 is given the surface charging of photosensitive drums 905 equably.
Optical scanner is radiated the modulated beam of light of the image information modulation based on from for example personal computer of upper stage arrangement on the surface that utilizes the photosensitive drums 905 that electrostatic charger 1002 charges.Thus, eliminate be positioned at photosensitive drums 905 by the lip-deep electric charge of optical radiation, and on the surface of this photosensitive drums 905, form the sub-image corresponding with image information.The sub-image forming is thus along with the rotation of photosensitive drums 905 is moved towards the direction of developer roll 1003.The structure of this optical scanner 1000 will be in explanation subsequently.
Toner Cartridge 1004 is accommodated toner, and toner is supplied to developer roll 1003 from it.In the time that power-on or print job finish, check the toning dosage in toner Cartridge, and on the display part not representing, show the information of changing toner Cartridge for urging the in the situation that of residue toner quantity not sufficient.
Along with the rotation of developer roll 1003, the toner of supplying with from toner Cartridge 1004 is evenly attached to the surface of this developer roll 1003 and forms thin toner layer.In addition, this developer roll 1003 is applied to voltage, to form contrary electric field in the charging part (not being subject to the part of light beam radiation) of photosensitive drums 905 and discharge part (being subject to the part of light beam radiation).Utilize this voltage, the lip-deep toner that is attached to developer roll 1003 is only transferred in the part that is subject to optical radiation of photosensitive drums 905.Thus, developer roll 1003 is attached on the photosensitive drums 905 upper sub-images that form in surface toner, and thus, realizes the development of image information.Be attached with the sub-image of toner or " toner image " along with the rotation of photosensitive drums 905 is shifted to and shifted charger 1011.
In paper feeding tray 1006, accommodate recording paper 1013.In addition, feed roll 1007 is located near paper feeding tray 1006, and this feed roll 1007 from paper feeding tray 1006 a sheet by a sheet pick up recording paper 1013 and be supplied to and stop that roller is to 1008.Stop that roller is located near transferring roller 1011 1008, and temporary transient keep utilizing recording paper 1013 that feed roll 1007 picks up and and the rotation of photosensitive drums 905 synchronizedly should recording paper to this photosensitive drums 905 and the gap confession of shifting between charger 1011.
Thus, shift charger 1011 be applied in with the opposite polarity voltage of toner, with by lip-deep photosensitive drums 905 toner electric attraction to recording paper 1013.Utilize this voltage, the lip-deep toner image of photosensitive drums 905 is transferred on recording paper 1013.Then, shift and have the recording paper 1013 of toner image to advance to fixing roller 1009 thus.
Utilize this fixing roller 1009 to apply heat and pressure to recording paper 1013, and toner image is fixed on this recording paper 1013.The recording paper 1013 that is fixed with thus toner image advances to discharge tray 1010 a sheet by a sheet being deposited on this discharge tray 1010 via exit roller 1012.
Cleaning doctor 1005 is removed and is remained in the lip-deep toner of photosensitive drums 905 (residue toner).The residue toner of removing is like this used again.Removing after residue toner, photosensitive drums 905 is returned to the position of electrostatic charger 1002.
Then, by the structure of explanation optical scanner 1000.
With reference to Figure 44, optical scanner 1000 comprises light source cell 901, cylindrical lens 902, polygon prism 903, scanning lens 904 etc.
Light source cell 901 has the arbitrary similar surface-emission laser array with the surface-emission laser array 100J-100T illustrating above.
Cylindrical lens 902 along sub scanning direction from the light-ray condensing of light source cell 901 near the region deflection minute surface of polygon prism 903.
Polygon prism 903 has six all as the minute surface of deflection minute surface.Polygon prism 903 rotates with constant speed around the rotating shaft parallel with sub scanning direction.
Scanning lens 904 is utilizing the light-ray condensing of polygon prism 903 deflections to the surface of photosensitive drums 905.
In the situation that for example adopting surface-emission laser array 100G, when the magnification ratio that is set to 4.41 μ m and optical system as interval C is set to approximately 1.2 times, the high density that can realize 4800dpi (point/inch) writes.It should be noted, when the magnification ratio that is set to 7.04 μ m and optical system as interval C is set to approximately 0.75 times, even in the structure arranging with same intervals at 40 surface light emitting laser diode elements, also can obtain the resolution of 4800dpi (point/inch).But this structure is not preferably, because adopt the optical system of little magnification ratio to need a large amount of light.
In addition, in each in surface-emission laser array 100J-100T, the straight line of drawing perpendicular to the straight line extending along sub scanning direction from the center separately of multiple surface light emitting laser diode elements is formed has equal interval, and thus, by the startup timing of the multiple surface light emitting laser diode elements of suitable adjustment, can in photosensitive drums 905, obtain the situation arranging with equal intervals C along sub scanning direction as light source.Thus, can adjust the interval of measuring point along sub scanning direction by adjusting the interval C of surface light emitting laser diode element and the magnification ratio of optical system.
In the situation that for example adopting surface-emission laser array 100J, when the magnification ratio that is set to 5 μ m and optical system as interval C is set to approximately 2.1 times, the high density that can realize 2400dpi (point/inch) writes.In addition, can or reduce interval C or further reduce magnification ratio by the quantity of further increase surface light emitting laser diode element to increase packing density and improve print quality.It should be noted, by adjusting the opening timing of light source, be easy to control the interval that writes along main scanning direction.
Light source cell 901 has the arbitrary similar surface-emission laser array with the surface-emission laser array 100J-100T illustrating above, and can obtain higher power output.As a result, adopt the laser printer 800 of optical scanner 1000 can carry out at faster speed imaging.
As previously described, comprise arbitrary optical scanner 1000 of surface-emission laser array 100J-100T according to its inner light source unit 901 of the present embodiment, can utilize light beam to realize the stable scanning to scanning plane.In addition, can extend the life-span of light source cell 901.
In addition, the laser printer 800 of the optical scanner 1000 of scanning of a surface can be stablized according to employing of the present invention, high quality graphic can be formed at a high speed.
In addition, not key factor and in traditional image taking speed acceptable situation at image taking speed, the present invention can reduce the quantity of the surface light emitting laser diode element that forms surface-emission laser array, and the product recovery rate of surface-emission laser array significantly improves.In addition, the cost of surface-emission laser array.
In addition, adopt the present invention, even in the situation that writing dot density and increasing, also can implement to print and sacrifice hit print-out rate not.
In addition, by reducing the area that occupied by multiple surface light emitting laser diode elements, the present invention can suppress surface-emission laser array central part intensification, can suppress the aberration effects of optical system and can improve picture quality.
In addition, since the life of surface-emission laser array, recycling light source cell.
Meanwhile, at surface-emission laser array, as write optical unit in the situation that, this writes optical unit and can be used as disposable unit processing, especially short in the case of in life-span of surface-emission laser array.But, structure has long feature of life-span with arbitrary surface-emission laser array being equal to of surface-emission laser array 100J-100T, in the time using arbitrary surface-emission laser array being equal to of this and surface-emission laser array 100J-100T here, the recycling optical unit that writes.Therefore, realize protection of resources and reduce carrying capacity of environment.This is also applicable to the device of other employing surface-emission laser array of the present invention.
In addition, although previous embodiment is illustrated for the situation of laser printer 800, the present invention is never limited to this application-specific.Therefore, any imaging device can form high quality graphic at high speed, as long as this imaging device adopts optical scanner 1000.
In addition, even in the situation that imaging device forms multicolor image, be suitable for the optical scanner of coloured image by employing, also can form at high speed high quality graphic.
For example, imaging device can be the tandem colour apparatus that is equipped with multiple photosensitive drums as shown in figure 45.It should be noted, this tandem colour apparatus comprises the photosensitive drums K1 for black (K), electrostatic charger K2, developing cell K4, cleaning device K5 and transfer charging device K6, for the photosensitive drums C1 of cyan (C), electrostatic charger C2, developing cell C4, cleaning device C5 and transfer charging device C6, for the photosensitive drums M1 of magenta (M), electrostatic charger M2, developing cell M4, cleaning device M5 and transfer charging device M6, for the photosensitive drums Y1 of yellow (Y), electrostatic charger Y2, developing cell Y4, cleaning device Y5 and transfer charging device Y6, optical scanner 1010, transition zone T80, fixing device T30 etc.
In institute's example, optical scanner 1010 comprises for the surface-emission laser array of black, for the surface-emission laser array of cyan, for the surface-emission laser array of magenta with for yellow surface-emission laser array.Therefore, each surface-emission laser array comprises and arbitrary surface-emission laser array being equal to of surface-emission laser array 100J-100T.
Thus, be radiated on photosensitive drums K1 via black scanning optics with the light beam of surface-emission laser array from black, be radiated on photosensitive drums C1 via cyan scanning optics with the light beam of surface-emission laser array from cyan, be radiated photosensitive drums M1 with the light beam of surface-emission laser array via magenta scanning optics from magenta upper, and be radiated on photosensitive drums Y1 via yellow scanning optics with the light beam of surface-emission laser array from yellow.Thus, for every kind of color provides optical scanner 1010.
Each photosensitive drums is rotated around the direction of arrow, and provides charhing unit, developing cell, transfer charging device and cleaning device along the rotation direction of each photosensitive drums.It should be noted, each charhing unit is given the surface charging of corresponding photosensitive drums equably.By from optical scanner 1010 radiation laser beams to utilizing charhing unit like this photosensitive drums of charging, electrostatic latent image is formed in this photosensitive drums.In addition, utilize corresponding developing cell to form toner image on the surface of photosensitive drums.In addition, the toner image of each color is transferred on recording paper via corresponding transfer charhing unit, and at this, the color toner image forming is thus fixed on this recording paper via fixing device T30.
For this tandem colour apparatus, due to machine error etc., there is the situation of color misalignment, at this, adopt in it optical scanner 1010 of high density surface-emission laser array can be by versicolor this color misalignment that makes corrections of surface light emitting laser diode element of selecting suitably be started.
It should be noted, imaging device can be to adopt the imaging device of silver salt film as image-carrier.In the case, utilize optical scanner on silver salt film, to form sub-image, make the sub-image that forms thus visual by implementing the process similar with the developing process of common silver halide photography process simultaneously.Same, can utilize the process similar with the print procedure of common silver halide photography process this image transfer to contacting on paper.This imaging device is for constructing the optics drawing apparatus of photoeng raving device or for example CT scan image of rendering image.
In addition, imaging device can be to adopt the imaging device of colour developing medium (positive printing paper) as image-carrier, and this colour developing medium utilizes the heat energy colour developing of luminous point.In the case, can directly on image-carrier, form visual picture by optical scanner.
In addition, imaging device can be the imaging device without optical scanner, as long as this imaging device is to comprise and the imaging device of arbitrary surface-emission laser array being equal to of surface-emission laser array 100J-100T.
It should be noted in addition, embodiment described above only provides for illustrative purposes, is limited to these specific embodiments and should not be construed as the present invention.
The embodiment that the invention is not restricted to illustrate before this, can carry out various distortion and change on the contrary and not depart from the scope of the invention as set forth in patent claims.
industrial applicability
The present invention can be applicable to multiple surface light emitting laser diode elements and is arranged to along first direction and second direction the surface-emission laser array of array format, at this, interval along first direction between surface light emitting laser diode element can reduce, and is restricted to the center separately of the surface light emitting laser diode element from forming this surface-emission laser array perpendicular to the interval of the straight line of the straight line drafting of extending along first direction between this surface light emitting laser diode element along the interval of first direction.In addition, the present invention can be applicable to adopt the optical scanner of surface-emission laser array as above.In addition, the present invention can be applicable to adopt the imaging device of surface-emission laser array as above.
In addition, the invention provides so a kind of surface-emission laser array, be simultaneously operated even if form multiple surface light emitting laser diode elements of this surface-emission laser array, multiple surface light emitting laser diode elements also can have the output of homogeneous.In addition, the invention provides long surface-emission laser array of a kind of life-span.
In addition, the present invention can be applicable to be equipped with a kind of like this optical scanner and imaging device of surface-emission laser array, comprises multiple surface light emitting laser diode elements and can work as the device characteristics homogeneous that makes the plurality of surface light emitting laser diode element when multiple surface light emitting laser diode elements in array format are simultaneously operated in this surface-emission laser array.In addition, the present invention can be applicable to have optical scanner and the imaging device of long-life surface-emission laser array.
In addition, the present invention is in no way limited to the embodiment of explanation before this, can carry out various distortion and change on the contrary and does not depart from the scope of the present invention.
The present invention is based on the Japanese earlier application document No.2007-035652 and the No.2007-057955 that submit to respectively on February 16th, 2007 and on March 8th, 2007, quote these applications at this for reference.
Claims (9)
1. for a surface-emission laser array for optical scanner, comprise multiple surface light emitting laser diode elements of being arranged to two-dimensional array form,
Wherein, provide be perpendicular to one another crossing imaginary first axle and imaginary the second axis,
Many the straight lines of drawing perpendicular to described imaginary first axle from the center separately of described multiple surface light emitting laser diode elements are formed in described imaginary first axle and have roughly equal interval,
More than first described surface light emitting laser diode elements arranging along first direction are provided,
More than second described surface light emitting laser diode elements arranging along second direction are provided,
Described first direction and described second direction intersect each other, and described imaginary first axle overlaps with described first direction, and described imaginary the second axis does not overlap with described first direction and with described second direction angulation;
What the described surface light emitting laser diode element in described more than first described surface light emitting laser diode elements was fiducial value is spaced,
The quantity of the surface light emitting laser diode element in described more than first described surface light emitting laser diode elements is less than the quantity of the surface light emitting laser diode element in described more than second described surface light emitting laser diodes,
Interval between the line that the center separately of the described surface light emitting laser diode element from described more than first described surface light emitting laser diode elements is drawn perpendicular to described imaginary first axle is less than the center separately of the described surface light emitting laser diode element from described more than second described surface light emitting laser diode elements perpendicular to the interval of the line of described imaginary the second axis drafting
Wherein,
Described imaginary first axle is set to along the sub scanning direction of described optical scanner and extends, and
Described imaginary the second axis is set to along the main scanning direction of described optical scanner and extends.
2. for a surface-emission laser array for optical scanner, comprise multiple surface light emitting laser diode elements of being arranged to two-dimensional array form,
Be perpendicular to one another crossing imaginary first axle and imaginary the second axis are provided,
Wherein, many straight lines of drawing perpendicular to described imaginary first axle from the center separately of described multiple surface light emitting laser diode elements are formed in described imaginary first axle and have roughly equal interval,
More than first described surface light emitting laser diode elements arranging along first direction are provided,
More than second described surface light emitting laser diode elements arranging along second direction are provided,
Described first direction and described second direction intersect each other, and described imaginary first axle overlaps with described first direction, and described imaginary the second axis does not overlap with described first direction and with described second direction angulation;
The quantity of the surface light emitting laser diode element in described more than first described surface light emitting laser diode elements is less than the quantity of the surface light emitting laser diode element in described more than second described surface light emitting laser diode elements,
The interval of the line of drawing perpendicular to described imaginary first axle from the center separately of the described surface light emitting laser diode element of described more than first described surface light emitting laser diode elements is less than the interval of the line of drawing perpendicular to described imaginary the second axis from the center separately of the described surface light emitting laser diode element of described more than second described surface light emitting laser diode elements
Wherein,
Described imaginary first axle is set to along the sub scanning direction of described optical scanner and extends, and
Described imaginary the second axis is set to along the main scanning direction of described optical scanner and extends.
3. surface-emission laser array according to claim 2, wherein, the quantity basis of the described surface light emitting laser diode element of arranging along described second direction is in the change in location of described first direction, and the quantity basis of the described surface light emitting laser diode element of arranging along described first direction is in the change in location of described second direction.
4. for a surface-emission laser array for optical scanner, comprise multiple surface light emitting laser diode elements of being arranged to two-dimensional array form,
Wherein, many the straight lines that the center separately of described multiple surface light emitting laser diode elements of arranging from the second direction along crossing with first direction is drawn perpendicular to the straight line extending along first direction are formed along described first direction has roughly equal interval
At least one interconnection pattern being connected with at least one the surface light emitting laser diode element being located in described multiple surface light emitting laser diode elements between surface light emitting laser diode element and another surface light emitting laser diode element of opposite side of a side is located between the described surface light emitting laser diode element of arranging along described second direction
Wherein, described multiple surface light emitting laser diode element comprises m × n surface light emitting laser diode element, make to comprise m surface light emitting laser diode element at more than first the surface light emitting laser diode element of arranging along first direction, wherein m is equal to or greater than 2 integer, comprise n surface light emitting laser diode element at more than second the surface light emitting laser diode element of arranging along second direction, wherein
nto be equal to or greater than 2 integer,
Provide be perpendicular to one another crossing imaginary first axle and imaginary the second axis, and described imaginary first axle overlaps with described first direction, and described imaginary the second axis does not overlap with described first direction and with described second direction angulation;
The n bar linear of drawing perpendicular to described imaginary first axle from the center separately of n surface light emitting laser diode element of described more than second surface light emitting laser diode element becomes at described imaginary first axle and has roughly equal interval,
Wherein, maintenance is related to d < x and m≤n, interval between the line of drawing in described imaginary first axle from the central vertical separately of the described surface light emitting laser diode element of described more than first surface light emitting laser diode element in this d representative, and interval between the line drawn perpendicular to described imaginary the second axis from the center separately of the described surface light emitting laser diode element of described more than second surface light emitting laser diode element of x representative
Wherein,
Described imaginary first axle is set to along the sub scanning direction of described optical scanner and extends, and
Described imaginary the second axis is set to along the main scanning direction of described optical scanner and extends.
5. according to the surface-emission laser array described in any one in claim 1-4, wherein, in described more than first surface light emitting laser diode element, described multiple surface light emitting laser diode elements are arranged in zigzag.
6. according to the surface-emission laser array described in any one in claim 1-4, wherein, in described more than second surface light emitting laser diode element, described multiple surface light emitting laser diode elements are arranged in zigzag.
7. according to the surface-emission laser array described in any one in claim 1-4, wherein, described many straight lines of drawing perpendicular to described imaginary first axle from the center separately of described multiple surface light emitting laser diode elements are formed in described imaginary first axle and have the roughly equal interval C that is less than 5 μ m.
8. an optical scanner, comprising:
Surface-emission laser array as claimed in claim 2;
Deflector, deflection is from multiple laser beams of described multiple surface light emitting laser diode element transmittings; And
Scanning optical element, guides to scanning plane the described multiple laser beams that utilize described deflector,
Wherein, described imaginary first axle is set to along the sub scanning direction of described scanning optical element and extends, and
Described imaginary the second axis is set to along the main scanning direction of described scanning optical element and extends.
9. an imaging device, comprising:
Photoreceptor, provides scanning plane;
Light source, produces multiple light beams, and described light source comprises surface-emission laser array as claimed in claim 2;
Deflector, deflection is from described multiple laser beams of described multiple surface light emitting laser diode element transmittings; And
Scanning optical element, guides to the described multiple laser beams that utilize described deflector the described scanning plane of described photoreceptor,
Wherein, described imaginary first axle is set to along the sub scanning direction of described scanning optical element and extends, and
Described imaginary the second axis is set to along the main scanning direction of described scanning optical element and extends.
Applications Claiming Priority (9)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006126074 | 2006-04-28 | ||
| JP2006126076 | 2006-04-28 | ||
| JP126074/2006 | 2006-04-28 | ||
| JP126076/2006 | 2006-04-28 | ||
| JP035652/2007 | 2007-02-16 | ||
| JP2007035652A JP5316919B2 (en) | 2006-04-28 | 2007-02-16 | Surface emitting laser array, optical scanning device and image forming apparatus provided with the same |
| JP057955/2007 | 2007-03-08 | ||
| JP2007057955A JP5224159B2 (en) | 2006-04-28 | 2007-03-08 | Surface emitting laser array, optical scanning device, and image forming apparatus |
| PCT/JP2007/059563 WO2007126159A1 (en) | 2006-04-28 | 2007-04-27 | Surface-emission laser array, optical scanning apparatus and image forming apparatus |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010101169979A Division CN101776224B (en) | 2006-04-28 | 2007-04-27 | Surface-emission laser array, optical scanning apparatus and image forming apparatus |
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| Publication Number | Publication Date |
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| CN101346858A CN101346858A (en) | 2009-01-14 |
| CN101346858B true CN101346858B (en) | 2014-08-27 |
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| CN2010101169979A Active CN101776224B (en) | 2006-04-28 | 2007-04-27 | Surface-emission laser array, optical scanning apparatus and image forming apparatus |
| CN200780000885.3A Expired - Fee Related CN101346858B (en) | 2006-04-28 | 2007-04-27 | Surface-emission laser array, optical scanning apparatus and image forming apparatus |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2010101169979A Active CN101776224B (en) | 2006-04-28 | 2007-04-27 | Surface-emission laser array, optical scanning apparatus and image forming apparatus |
Country Status (6)
| Country | Link |
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| US (3) | US8089498B2 (en) |
| EP (1) | EP2013952B1 (en) |
| KR (2) | KR20100017969A (en) |
| CN (2) | CN101776224B (en) |
| TW (1) | TWI373958B (en) |
| WO (1) | WO2007126159A1 (en) |
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- 2007-04-27 KR KR1020097027462A patent/KR20100017969A/en not_active Application Discontinuation
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Also Published As
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| TWI373958B (en) | 2012-10-01 |
| CN101776224A (en) | 2010-07-14 |
| KR20080016895A (en) | 2008-02-22 |
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| CN101776224B (en) | 2012-11-28 |
| EP2013952B1 (en) | 2021-02-24 |
| US8508567B2 (en) | 2013-08-13 |
| EP2013952A1 (en) | 2009-01-14 |
| US20130286150A1 (en) | 2013-10-31 |
| US8830287B2 (en) | 2014-09-09 |
| KR20100017969A (en) | 2010-02-16 |
| WO2007126159A1 (en) | 2007-11-08 |
| US20100060712A1 (en) | 2010-03-11 |
| US20120069416A1 (en) | 2012-03-22 |
| EP2013952A4 (en) | 2011-04-27 |
| CN101346858A (en) | 2009-01-14 |
| TW200746789A (en) | 2007-12-16 |
| US8089498B2 (en) | 2012-01-03 |
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