CN101344334A - Solar spectrum selective absorption film and preparation method thereof - Google Patents
Solar spectrum selective absorption film and preparation method thereof Download PDFInfo
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- CN101344334A CN101344334A CNA2008101179507A CN200810117950A CN101344334A CN 101344334 A CN101344334 A CN 101344334A CN A2008101179507 A CNA2008101179507 A CN A2008101179507A CN 200810117950 A CN200810117950 A CN 200810117950A CN 101344334 A CN101344334 A CN 101344334A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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Abstract
The invention relates to a solar spectrum selective absorbing film and a preparation method thereof, the solar spectrum selective absorbing film comprises a film coated substrate, an infrared reflection layer, an absorption layer and an antireflection layer are sequentially covered on the surface of the substrate from interior to exterior; the infrared reflection layer is a sputtering deposition layer containing titanium element plus aluminium element plus silicon element, the absorption layer is the sputtering deposition layer containing aluminum nitrogen cluster plus titanium nitrogen cluster plus silicon nitrogen cluster plus aluminum titanium silicon cluster; the antireflection layer is the sputtering deposition layer containing aluminum nitrogen cluster plus titanium nitrogen cluster plus silicon nitrogen cluster; the solar spectrum selective absorbing film and the preparation method of the invention adopt the sputtering technology of the titanium silicon alloy target and the aluminium alloy target; the full color absorption rate Alpha to solar spectrum of a solar energy heat collecting tube adopting the invention is not less than 94 percent, the total emissivity Epsilon is not more than 4.5 percent, and the air drying performance of the solar energy heat collecting tube can be improved 21.33 percent. The solar spectrum selective absorbing film can be used under the temperature of higher than 400 DEG C all year around.
Description
Technical field
The present invention relates to a kind of solar spectrum selective absorbing film and preparation method thereof, the present invention adopts the magnetron sputtering membrane process to deposit on the overlay film matrix and generates the solar spectrum selective absorbing film with infrared reflecting layer, absorbed layer, antireflection layer.
Background technology
Existing coating for selective absorption of sunlight spectrum generally includes reflecting layer, absorbed layer, antireflection layer.Chinese patent 01138135.3 discloses a kind of coating for selective absorption of sunlight spectrum, comprise the reflecting layer, absorbed layer, antireflection layer, its absorbed layer be with titanium and alloy aluminum be the negative electrode aluminium that sputter forms in nitrogen, air, nitrogen+oxygen atmosphere nitrogen+titanium nitrogen-aluminium titanium [(AlN+TiN)-AlTil film and aluminum-nitrogen-oxygen+titanium-nitrogen-oxygen-aluminium titanium [(AlN0+TiN0)-the AlTil film, its antireflection layer is aluminium nitrogen+titanium nitrogen (AlN+TiN) film and aluminum-nitrogen-oxygen+titanium-nitrogen-oxygen (A1-N0+TiN0) film.Through 350 ℃, 250 hours, or 400 ℃, 50 hours, or 450 ℃, after the baking in 80 hours, its solar absorptance α can reach more than 0.93 the coating for selective absorption of sunlight spectrum of the present invention preparation, emissivity=0.06～0.10 (80 ℃) under atmospheric condition.This invention is a matrix material with glass or bright metal, and titanium and alloy aluminum are negative electrode, titanium: aluminium=0.01～0.90.But this patent system alternative absorber coatings needs long sputter time or big power consumption, and the performance of absorptance and emissivity is still not ideal enough.Therefore, be necessary to provide a kind of new solar spectrum selective absorbing film and preparation method thereof to overcome above-mentioned deficiency.
Summary of the invention
The object of the present invention is to provide a kind of solar spectrum selective absorbing film, this solar spectrum selective absorbing film is included on the surface of overlay film matrix infrared reflecting layer, absorbed layer, antireflection layer is set; This selective absorbing film has higher absorptivity and lower emissivity and heat-resisting ability to solar spectrum.
The objective of the invention is to realize by following technical proposals: a kind of solar spectrum selective absorbing film, comprise an overlay film matrix, on this matrix surface, cover infrared reflecting layer, absorbed layer, antireflection layer from inside to outside successively; Described infrared reflecting layer is the sputtering depositing layer that includes titanium elements+aluminium element+element silicon, and described absorbed layer is the sputtering depositing layer that includes aluminium nitrogen cluster+titanium nitrogen cluster+silicon nitrogen cluster+aluminium titanium silicon cluster; Described antireflection layer is the sputtering depositing layer that includes aluminium nitrogen cluster+titanium nitrogen cluster+silicon nitrogen cluster.
Another object of the present invention is to provide a kind of preparation method of solar spectrum selective absorbing film, in magnetic control sputtering film plating device, adopt titanium silicon target and aluminium alloy target, contain aluminium nitrogen cluster+titanium nitrogen cluster+silicon nitrogen cluster+aluminium titanium silicon cluster in the sputtering sedimentation thing that on the overlay film matrix surface, generates.
Another object of the present invention is realized by following technical proposals: a kind of preparation method of solar spectrum selective absorbing film, and its step is:
A, the overlay film matrix is installed in the coating chamber of magnetic control sputtering film plating device, the vacuum in this coating chamber is set to 0.0060Pa～0.0070Pa, and this magnetron sputtering coater comprises a titanium silicon target, an aluminium alloy target;
B, to described coating chamber input argon gas, make the sputter reaction atmosphere be stabilized in 0.20Pa～0.28Pa, connect the aluminium alloy target power supply, sputter reaction 2-3 minute;
C, connection titanium silicon target power supply, to described coating chamber input nitrogen, sputter was reacted 10-14 minute, and increased the input quantity of nitrogen gradually, titanium elements, aluminium element, element silicon in the sputtering sedimentation thing outermost layer on the overlay film matrix surface are reduced gradually, finally level off to zero;
D, startup apparatus for baking, the vacuum in the apparatus for baking is set to 0.0060Pa～0.0067Pa, and baking temperature is set to 380 ℃～420 ℃, and baking was handled 2.5～3 hours to the sputtering sedimentation thing on the overlay film matrix, generated solar spectrum selective absorbing film; Described selective absorbing film comprises infrared reflecting layer, absorbed layer, antireflection layer; Described infrared reflecting layer is the sputtering depositing layer that includes titanium elements+aluminium element+element silicon, and described absorbed layer is the sputtering depositing layer that includes aluminium nitrogen cluster+titanium nitrogen cluster+silicon nitrogen cluster+aluminium titanium silicon cluster; Described antireflection layer is the sputtering depositing layer that includes aluminium nitrogen cluster+titanium nitrogen cluster+silicon nitrogen cluster.
Compared with the prior art the present invention has following advantage:
1, because selective absorbing film of the present invention adopts titanium silicon target and the preparation of aluminium alloy target, the effect that this absorbing film is fabulous to being absorbed with of solar spectrum has excellent heat-resisting ability, and cheap.
2, selective absorbing film of the present invention is to panchromatic absorptivity α 〉=94% of solar spectrum, total emissivity ε≤4.5%, and coating is anti-aging, and hot property is stable, can use being higher than under 400 ℃ the temperature.
3, use the sky solarization performance of the solar energy heat collection pipe of plated film of the present invention can improve 21.33%.
Description of drawings
The invention will be further described below in conjunction with drawings and Examples.
Fig. 1 is a structural representation of the present invention
Fig. 2 is a glass inner tube structural representation of the present invention
The specific embodiment
Embodiment one:
A kind of solar spectrum selective absorbing film comprises an overlay film matrix, covers infrared reflecting layer, absorbed layer, antireflection layer on this matrix surface from inside to outside successively; Described infrared reflecting layer is the sputtering depositing layer (Ti+Al+Si) that includes titanium elements+aluminium element+element silicon, and described absorbed layer is the sputtering depositing layer (AlN+TiN+Si that includes aluminium nitrogen cluster+titanium nitrogen cluster+silicon nitrogen cluster+aluminium titanium silicon cluster
3N
4+ AlTiSi); Described antireflection layer is the sputtering depositing layer (AlN+TiN+Si that includes aluminium nitrogen cluster+titanium nitrogen cluster+silicon nitrogen cluster
3N
4).Referring to Fig. 1, the overlay film matrix is a plane absorber plate 1, covers infrared reflecting layer 2, absorbed layer 3, antireflection layer 4 on it from inside to outside successively; The thickness of described infrared reflecting layer is 70～90 nanometers (nm); The thickness of described absorbed layer is 70～90 nanometers; Described antireflection layer thickness is 40～60 nanometers.Described thickness unit also can be expressed as 10
-9M.Described coating layer thickness value can be selected in above-mentioned scope according to actual needs flexibly, does not enumerate one by one at this.
Embodiment two:
Referring to Fig. 2, overlay film matrix of the present invention is a glass inner tube 10 in the solar vacuum heat-collecting pipe, Fig. 2 is the cross section view of glass inner tube, only show glass inner tube and coating structure, do not show the glass outer tube, cover infrared reflecting layer 20, absorbed layer 30, antireflection layer 40 on the described glass inner tube outer surface from inside to outside successively; In the present embodiment, the thickness of described infrared reflecting layer is 70～90 nanometers, and optimum thickness is 90 nanometers; The thickness of described absorbed layer is 70～90 nanometers, and optimum thickness is 80 nanometers; Described antireflection layer thickness is 40～60 nanometers, and optimum thickness is 40 nanometers.
In the present embodiment, the experimental data of the glass inner tube contrast of the glass inner tube of use the method for the invention plated film and common thermal-collecting tube is as follows:
Show according to above-mentioned experimental data, use the empty performance of shining of solar energy heat collection pipe of the method for the invention plated film can improve 21.33%.
When the medium in the glass inner tube of the present invention adopted conduction oil, this solar energy heat collection pipe can use being higher than under 400 ℃ the temperature.
Embodiment three:
A kind of preparation method of solar spectrum selective absorbing film, the magnetic control sputtering film plating device that uses in the present embodiment is the 850 type magnetron sputtering coaters that Hengyang, Hunan produces, and employed nitrogen stable quantity is 55SCCM (the gas milliliter number that per minute flows under the SCCM-standard state) when using this equipment.The overlay film matrix is the glass inner tube in the solar vacuum heat-collecting pipe.In other embodiments, the overlay film matrix can also be metal tube, metallic plate or glass plate.
Its operating procedure is:
A, the overlay film matrix is installed in the coating chamber of magnetic control sputtering film plating device, the vacuum in this coating chamber is set to 0.0065Pa, and this magnetron sputtering coater comprises a titanium silicon target, an aluminium alloy target (its model is homemade LY11-13); Vacuum also can be expressed as 0.0065 handkerchief, and vacuum can also be selected in 0.0060Pa～0.0070Pa scope according to actual needs flexibly;
B, to described coating chamber input argon gas, make the sputter reaction atmosphere be stabilized in 0.24Pa, connect the aluminium alloy target power supply, the sputter electric current is 40A (ampere), sputter was reacted 2-3 minute; The sputter reaction atmosphere can also be selected in 0.20Pa～0.28Pa scope according to actual needs flexibly;
C, connection titanium silicon target power supply, the sputter electric current is 42A, to described coating chamber input nitrogen, sputter reaction 10-14 minute, and increase the input quantity of nitrogen gradually, titanium elements, aluminium element, element silicon in the sputtering sedimentation thing outermost layer on the overlay film matrix surface are reduced gradually, finally level off to zero;
D, startup apparatus for baking, the heating rate of pressing 10 ℃-15 ℃ of per minutes heats up, vacuum in the apparatus for baking is set to 0.0063Pa (can also select flexibly according to actual needs) in 0.0060Pa～0.0067Pa scope, baking temperature is set to 400 ℃ (also can select flexibly according to actual needs) in 380 ℃～420 ℃ scopes, baking was handled 2.5～3 hours to the sputtering sedimentation thing on the overlay film matrix, Best Times is 2.8 hours, handle through overbaking, the sputtering sedimentation thing finally generates solar spectrum selective absorbing film; Described selective absorbing film comprises infrared reflecting layer, absorbed layer, antireflection layer; Described infrared reflecting layer is the sputtering depositing layer that includes titanium elements+aluminium element+element silicon, and described absorbed layer is the sputtering depositing layer that includes aluminium nitrogen cluster+titanium nitrogen cluster+silicon nitrogen cluster+aluminium titanium silicon cluster; Described antireflection layer is the sputtering depositing layer that includes aluminium nitrogen cluster+titanium nitrogen cluster+silicon nitrogen cluster.The apparatus for baking of present embodiment belongs to conventional equipment, can be mounted in a roasting procedure section in the magnetron sputtering coater system, also can be an equipment relatively independent with the magnetron sputtering coater system, is not described in detail at this.
Claims (3)
1, a kind of solar spectrum selective absorbing film comprises an overlay film matrix, covers infrared reflecting layer, absorbed layer, antireflection layer on this matrix surface from inside to outside successively; It is characterized in that: described infrared reflecting layer is the sputtering depositing layer that includes titanium elements+aluminium element+element silicon, and described absorbed layer is the sputtering depositing layer that includes aluminium nitrogen cluster+titanium nitrogen cluster+silicon nitrogen cluster+aluminium titanium silicon cluster; Described antireflection layer is the sputtering depositing layer that includes aluminium nitrogen cluster+titanium nitrogen cluster+silicon nitrogen cluster.
2, selective absorbing film according to claim 1 is characterized in that: the thickness of described infrared reflecting layer is 70～90 nanometers; The thickness of described absorbed layer is 70～90 nanometers; Described antireflection layer thickness is 40～60 nanometers.
3, a kind of preparation method of solar spectrum selective absorbing film is characterized in that:
A, the overlay film matrix is installed in the coating chamber of magnetic control sputtering film plating device, the vacuum in this coating chamber is set to 0.0060Pa～0.0070Pa, and this magnetron sputtering coater comprises a titanium silicon target, an aluminium alloy target;
B, to described coating chamber input argon gas, make the sputter reaction atmosphere be stabilized in 0.20Pa～0.28Pa, connect the aluminium alloy target power supply, sputter reaction 2-3 minute;
C, connection titanium silicon target power supply, to described coating chamber input nitrogen, sputter was reacted 10-14 minute, and increased the input quantity of nitrogen gradually, titanium elements, aluminium element, element silicon in the sputtering sedimentation thing outermost layer on the overlay film matrix surface are reduced gradually, finally level off to zero;
D, startup apparatus for baking, the vacuum in the apparatus for baking is set to 0.0060Pa～0.0067Pa, and baking temperature is set to 380 ℃～420 ℃, and baking was handled 2.5～3 hours to the sputtering sedimentation thing on the overlay film matrix, generated solar spectrum selective absorbing film; Described selective absorbing film comprises infrared reflecting layer, absorbed layer, antireflection layer; Described infrared reflecting layer is the sputtering depositing layer that includes titanium elements+aluminium element+element silicon, and described absorbed layer is the sputtering depositing layer that includes aluminium nitrogen cluster+titanium nitrogen cluster+silicon nitrogen cluster+aluminium titanium silicon cluster; Described antireflection layer is the sputtering depositing layer that includes aluminium nitrogen cluster+titanium nitrogen cluster+silicon nitrogen cluster.
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| CN102353164A (en) * | 2011-08-25 | 2012-02-15 | 山东力诺新材料有限公司 | High-temperature solar selective absorption coating and preparation method thereof |
| CN101886848B (en) * | 2009-05-11 | 2012-07-04 | 范天方 | Solar spectrum selective absorbing film and preparation method thereof |
| WO2012113968A1 (en) * | 2011-02-22 | 2012-08-30 | Savo-Solar Oy | Method for manufacturing thermal absorber for solar thermal collector |
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| CN1018021B (en) * | 1991-06-18 | 1992-08-26 | 北京市太阳能研究所 | Solar energy selective absorption film and preparation method thereof |
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| CN103423896A (en) * | 2012-05-18 | 2013-12-04 | 徐秀萍 | Method, product and equipment for manufacturing high-emissivity anti-idle-sunning all-glass vacuum heat collecting and utilizing element |
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