CN101339922A - Manufacturing method for one-time programmable device - Google Patents
Manufacturing method for one-time programmable device Download PDFInfo
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- CN101339922A CN101339922A CNA2007100435323A CN200710043532A CN101339922A CN 101339922 A CN101339922 A CN 101339922A CN A2007100435323 A CNA2007100435323 A CN A2007100435323A CN 200710043532 A CN200710043532 A CN 200710043532A CN 101339922 A CN101339922 A CN 101339922A
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- programmable device
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- dielectric layer
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Abstract
The invention provides a manufacturing method of one-time programmable device. The method comprises the steps that firstly an underlay with the surface area is provided; a gird dielectric layer is formed on the surface area of the underlay; then the gird dielectric layer is provided with at least a floating grid; immediately, the rapid thermal annealing is implemented, meanwhile an oxide layer is formed on the floating grid by oxidizing; finally, a self-aligned barrier layer is deposited and formed on the floating grid. Compared with a common self-aligned barrier layer which is formed by PE-SiH4, the oxide layer which is formed by adopting the method of the invention under the condition of the high temperature of the rapid thermal annealing has better insulation performance; therefore, the data keeping performance of the one-time programmable device can be effectively improved.
Description
Technical field
The present invention relates to a kind of manufacture method of semiconductor device, particularly a kind of manufacture method of disposal programmable device.
Background technology
(one time programming is a kind of novel technology OTP) to the one-off programming device, and it is compatible with logic process fully, does not add any extra structure sheaf, therefore, has broad application prospects.
The performance of weighing the good and bad most critical of disposal programmable device quality is data retentivity (DataRetention), stored electric charge mainly is that (self alignment blocker SAB) omits by the autoregistration barrier layer in the floating grid of existing disposal programmable device.In addition, because the easiest generation point discharge of wedge angle at the drift angle place, grid both sides of existing disposal programmable device also easily causes the problem that data keep.
Learn the data retentivity that thicker autoregistration barrier layer can obtain by experiment.But, after the autoregistration barrier layer arrives certain thickness, can cause non-salicide poly resistance and non-salicideactive resistance can raise 15%～20%, and the saturation current of PMOS also can reduce about 5%, far-reaching to pure logical circuit.
In the prior art, the solution that adopts is to strengthen the deposition of P+ usually, and the ion that accumulates in the oxide skin(coating) border is compensated.But this method also has a lot of defectives, and more complicated on the technology.
Summary of the invention
The object of the present invention is to provide a kind of manufacture method of disposal programmable device, it can solve the problem that charge stored is omitted by the autoregistration barrier layer in the floating grid effectively, also can solve the data maintenance problem that point discharge causes simultaneously effectively.
To achieve the above object, the invention provides a kind of manufacture method of One Time Programmable device, may further comprise the steps: (1) provides the substrate with surf zone, and forms gate dielectric layer at the surf zone of substrate; (2) at least one floating grid is set on described gate dielectric layer; (3) carry out rapid thermal annealing, on described floating grid, see through oxidation simultaneously and form the monoxide layer; (4) deposition forms an autoregistration barrier layer on described oxide skin(coating).
In the manufacture method of above-mentioned disposal programmable device, at least one control grid is set also on the described gate dielectric layer.
In the manufacture method of above-mentioned disposal programmable device, in step (2) afterwards, adopt drift angle sphering technology to form slick and sly drift angle in the both sides of described floating grid and control grid end face.
The manufacture method of disposal programmable device of the present invention, be put into before the deposition autoregistration barrier layer being used to deposit the rapid thermal annealing that forms after the step of autoregistration barrier layer in the prior art, the very thin oxide skin(coating) that forms in this one-step rapid thermal anneal process has than the better insulation property in autoregistration barrier layer, simultaneously, adopt the grid of slynessization, solve the problem of point discharge effectively, and then improved the data maintenance performance of disposal programmable device.
Description of drawings
To the description of one embodiment of the invention, can further understand purpose, specific structural features and the advantage of its invention by following in conjunction with its accompanying drawing.Wherein, accompanying drawing is:
Fig. 1 is the structural profile schematic diagram of disposal programmable device of the present invention;
Fig. 2 is the flow chart of disposal programmable device manufacture method of the present invention.
Embodiment
Below with reference to a specific embodiment disposal programmable device of the present invention and manufacture method thereof are described in further detail.
See also Fig. 1, be the structural profile schematic diagram of disposal programmable device of the present invention.As shown in the figure, disposal programmable device of the present invention comprises the substrate 1 with surf zone, on the surf zone of this substrate 1, form gate dielectric layer 20, an at least one control grid 10 and a floating grid 11 are set on gate dielectric layer 20, are coated with a thin oxide layer (not shown) and autoregistration barrier layer 40 and a shielding layer 50 on the described floating grid 11 in regular turn.Wherein, described control grid 10, floating grid 11 end face both sides all have slick and sly drift angle.
More specifically, this SAB layer 40 is PE-SiH4, and this shielding layer 50 is a silicon nitride layer.
Then see also Fig. 2, be the flow chart of the manufacture method of disposal programmable device of the present invention.At first execution in step S10 provides the substrate with surf zone, and forms gate dielectric layer at the surf zone of substrate; In step S20, an at least one floating grid and a control grid are set on described gate dielectric layer; In step S30, adopt drift angle sphering technology to form slick and sly drift angle in the both sides of described floating grid and control grid end face; In step S40, carry out rapid thermal annealing, on described floating grid, see through oxidation simultaneously and form a very thin oxide skin(coating); In step S50, deposition forms an autoregistration barrier layer SAB on described floating grid; In step S60, on aforementioned SAB layer, form a shielding layer, cover aforementioned SAB layer.
In sum, by disposal programmable device of the present invention and manufacture method thereof, it can improve the insulation property of oxide skin(coating), solves the data maintenance problem that point discharge causes simultaneously effectively.
Of particular note, the structure of disposal programmable device of the present invention is not limited to the mode defined in the foregoing description, although the present invention is had been described in detail with reference to preferred embodiment, those of ordinary skill in the art is to be understood that, can make amendment or be equal to replacement the present invention, and not breaking away from the spirit and scope of the present invention, it all should be encompassed in the middle of the claim scope of the present invention.
Claims (3)
1, a kind of manufacture method of disposal programmable device is characterized in that, may further comprise the steps:
(1) provides substrate, and form gate dielectric layer at the surf zone of substrate with surf zone;
(2) at least one floating grid is set on described gate dielectric layer;
(3) carry out rapid thermal annealing, on described floating grid, see through oxidation simultaneously and form the monoxide layer;
(4) deposition forms an autoregistration barrier layer on described oxide skin(coating).
2, the manufacture method of disposal programmable device according to claim 1 is characterized in that, at least one control grid also is set on the described gate dielectric layer.
3, the manufacture method of disposal programmable device according to claim 2 is characterized in that, in step (2) afterwards, adopts drift angle sphering technology to form slick and sly drift angle in the end face both sides of described floating grid and control grid.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007100435323A CN101339922A (en) | 2007-07-06 | 2007-07-06 | Manufacturing method for one-time programmable device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007100435323A CN101339922A (en) | 2007-07-06 | 2007-07-06 | Manufacturing method for one-time programmable device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101339922A true CN101339922A (en) | 2009-01-07 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2007100435323A Pending CN101339922A (en) | 2007-07-06 | 2007-07-06 | Manufacturing method for one-time programmable device |
Country Status (1)
| Country | Link |
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| CN (1) | CN101339922A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103956339A (en) * | 2014-05-21 | 2014-07-30 | 上海华力微电子有限公司 | Method for manufacturing disposable programmable device |
-
2007
- 2007-07-06 CN CNA2007100435323A patent/CN101339922A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103956339A (en) * | 2014-05-21 | 2014-07-30 | 上海华力微电子有限公司 | Method for manufacturing disposable programmable device |
| CN103956339B (en) * | 2014-05-21 | 2016-11-09 | 上海华力微电子有限公司 | The manufacture method of disposal programmable device |
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| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Open date: 20090107 |