CN101335167B - Hermetically sealed container and manufacturing method of image forming apparatus using the same - Google Patents

Hermetically sealed container and manufacturing method of image forming apparatus using the same Download PDF

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Publication number
CN101335167B
CN101335167B CN2008101317812A CN200810131781A CN101335167B CN 101335167 B CN101335167 B CN 101335167B CN 2008101317812 A CN2008101317812 A CN 2008101317812A CN 200810131781 A CN200810131781 A CN 200810131781A CN 101335167 B CN101335167 B CN 101335167B
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grafting material
gas
tight container
manufacture method
grafting
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CN101335167A (en
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长谷川光利
小柳和夫
多川昌宏
伊藤靖浩
大桥康雄
镰田重人
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Canon Inc
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Canon Inc
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Abstract

A manufacturing method of a hermetically sealed container, comprises steps of placing, on a first member, a first bonding material and a second bonding material having a larger compressibility in relation to a pressing force than a compressibility of the first bonding material, such that the first and second bonding materials are arranged side-to-side relationship, and the first bonding material has a height lower than a height of the second bonding material; pressing a second member to the second bonding material; heating and melting sequentially part by part the first bonding material; and cooling the first bonding material to bond together the first and second members. The invention also relates to a hermetic sealed container manufactured thereby and a method for manufacturing imaging device using the hermetically sealed container.

Description

The manufacture method of the imaging device of gas-tight container and use gas-tight container
Technical field
The present invention relates to the manufacture method of gas-tight container and imaging device, more particularly, relate to the joint method of the envelope of imaging device.
Background technology
Imaging device is known, and a plurality of electron emitting devices that wherein are used for according to the picture signal emitting electrons are arranged at the back plate, receives the irradiation of electronics, luminous and a plurality of fluorescent films display image are arranged at front panel, and the inner vacuum state that keeps.This imaging device has a kind of like this structure usually, and wherein support frame also is arranged between front panel and the back plate, and this support frame not only is engaged in front panel but also be engaged in the back plate, and forms envelope.In order to make envelope can play the effect of vacuum tank, not only need the bonding part to be firmly fixed, but also need the bonding part to have enough sealing properties.
Manufacture method with envelope of bonding part has been disclosed in the patent documentation 1, and this bonding part is engaged airtightly by the encapsulant with sealing function, and its airtight joint is had the binding agent reinforcement of cementation.According to this technology, encapsulant is formed on along circumferential length on the surface of bonding part, and encapsulant is heated and is softening, and engaged parts (for example front panel) are pushed.Therefore, encapsulant extends to the bonding part fully and obtains high sealing performance.After this, the periphery adhesive coated of encapsulant, thereby improve bond strength.Therefore, form the bonding part that not only has sealing property but also have bond strength.
Patent documentation 1: international open: WO2000/51155
In above-mentioned correlation technique, occur encapsulant height inhomogeneities and require further to improve the air-tightness of container.Specifically, because encapsulant is being extruded into deliquescing when being engaged parts, the position that front panel is fixed on the encapsulant becomes unstable, and has the possibility of the thickness of bonding part according to its positional fluctuation.Because encapsulant is the thin parts of thickness less than 1mm, so the minor swing of thickness produces very big influence to sealing property.If sealing property reduces, then can not guarantee and keep the vacuum degree in the envelope.If front panel then also can take place and can not be parallel to the fixing possibility of back plate in the position instability of front panel.Therefore, the danger of the inhomogeneities of the height of encapsulant will produce very big influence to picture quality.
Summary of the invention
The manufacture method that the purpose of this invention is to provide a kind of gas-tight container, wherein encapsulant forms with more uniform height, and the gas-tight seal of container can further improve.Another object of the present invention provides a kind of method of utilizing the above-mentioned manufacture method manufacturing imaging device of gas-tight container.
According to the present invention, a kind of manufacture method of gas-tight container is provided, comprise: the grafting material deposition step, be about to first grafting material and be arranged in greater than compressible second grafting material of first grafting material for the compressibility of pressure in the surfaces opposite to each other of first and second parts that form gas-tight container one, make second grafting material be arranged in along circuit in the surfaces opposite to each other of first and second parts described one, the first and second sealed engagement materials are provided with to concern in abutting connection with (side by side), and the height of first grafting material is lower than the height of second grafting material; Pressing steps is promptly pushed first and second grafting materials by in the surfaces opposite to each other of first and second parts another, make first and second grafting materials both contact in the surfaces opposite to each other of first and second parts described another; Heating steps, promptly a part of part sequentially heats and melt described another first grafting material in the surfaces opposite to each other that contact first and second parts; And cooling step, promptly cool off the part of the fusing of first grafting material.
In manufacture method, electron emitting device and image-forming block are set, and utilize according to the manufacture method of gas-tight container of the present invention and make gas-tight container according to imaging device of the present invention.
According to the manufacture method that the invention provides a kind of gas-tight container, thus encapsulant with more uniformly highly the gas-tight seal of formation and container can further improve.According to the present invention, can provide a kind of manufacture method of imaging device of the above-mentioned manufacture method of utilizing gas-tight container.
From below with reference to the description of accompanying drawing to exemplary embodiment, other features of the present invention will become obvious.
Description of drawings
Fig. 1 is the schematic diagram of imaging device of the present invention.
Fig. 2 A, 2B, 2C, 2D, 2E, 2F, 2G, 2H and 2I are the cutaway views of handling process of the present invention (bonding part).
Fig. 3 A, 3B-1,3B-2 and 3C are the plan view from above of bonding part of the present invention.
Fig. 4 A is the partial sectional view of the bonding part of an example of the present invention.Can use the optional example shown in Fig. 4 B.
Fig. 5 A, 5B and 5C are the schematic diagrames that illustrates according to the processing example of example 3.
Fig. 6 is the curve chart that the example of the pressure that is used for grafting material of the present invention and the relation between the compressibility is shown.
Fig. 7 is the schematic diagram that illustrates according to the processing example of example 6.
Embodiment
Various details embodiment.The manufacture method of gas-tight container of the present invention can be applied to use the manufacture method of the imaging device of vacuum tank.Specifically, the imaging device that wherein fluorescent film and electronics accelerating electrode are formed on the front panel of vacuum envelope and electron source is formed on the plate of back is the exemplary form that the present invention is suitable for.
Fig. 1 is the perspective view that illustrates as the example of the imaging device of target of the present invention, and in order to understand internal structure easily, the part of this equipment is cut.Imaging device 11 has the envelope 10 as gas-tight container, and this envelope 10 has first parts 12 and second parts 13 and has the inner space that (facing with each other) composition surface by first parts 12 and second parts 13 seals in conjunction with forming.The inside of gas-tight container (inside of envelope 10) keeps vacuum state.First parts 12 are formed by back plate (first plate) 22 and support frame 26.Second parts 13 are formed by front panel 32.Become towards the surface of front panel 32 with (support frame 26) the surperficial facing surfaces that is fixed in back plate 22.Though first parts 12 form by joining board 22 and support frame 26, it also can be used as global facility and forms.Back plate 22 and front panel 32 all have the substrate that is made of glass component.
Be used for being arranged at the substrate of glass 21 of back plate 22 according to a plurality of electron emitting devices 27 of picture signal emitting electrons.Be formed for making of the wiring (directions X wiring 28, Y direction wiring 29) of each electron emitting device 27 according to picture signal work.Receive the irradiation of electronics, luminous and fluorescent film 34 display image is arranged on the substrate of glass 33 of front panel 32.Secret note band 35 also is arranged on the substrate of glass 33.Fluorescent film 34 and secret note band 35 are alternately arranged and are provided with.Metal gasket (back) 36 by Al (aluminium) thin film fabrication is formed on the fluorescent film 34.Each metal gasket 36 has the function as electrode, and it is suitable for attracting electronics and receives the electromotive force of supplying with from HV Terminal Hv, and HV Terminal is arranged at envelope 10.Getter (getter) 37 by the non-vaporising of Ti (titanium) thin film fabrication is formed on the metal gasket 36.
To specifically describe embodiments of the invention with reference to figure 2A to Fig. 4 B subsequently.Fig. 2 A to Fig. 2 I is (bonding part) cutaway view that handling process of the present invention is shown.Fig. 3 A to Fig. 3 C is the plan view from above of bonding part.Fig. 4 A to Fig. 4 B is the cutaway view that the example of bonding part is shown.
(step S1: the grafting material deposition step)
At first, preparation is by first parts 12 (with reference to figure 2A) of joining board 22 and support frame 26 formation.Subsequently, first grafting material 1 is put on the surperficial and oven dry (with reference to figure 2B and 2C) towards (support frame 26) of front panel 32 along peripheral length.First grafting material, 1 usefulness metal or melted glass manufacturing.As first grafting material 1, select it for the compressibility of pressure compressible grafting material less than second grafting material 2.The height of first grafting material 1 is arranged to be lower than the height of second grafting material, and this will be described below.Subsequently, apply it for the compressibility of pressure compressible second grafting material 2 (with reference to figure 2D) greater than first grafting material 1.Big compressibility is represented that second grafting material, 2 to the first grafting materials 1 are soft and is extruded easily and is out of shape (this will describe in detail below).In other words, it is hard and be difficult to be extruded and be out of shape to have little compressible first grafting material, 1 to the second grafting material 2.Applying second grafting material 2 makes its height be higher than the height of first grafting material 1.Second grafting material 2 is to be provided with in abutting connection with (side by side) relation.Though in an illustrated embodiment first grafting material 1 be applied to the outside and second grafting material 2 puts on the inboard, they can be applied to respective side conversely and they be arranged in parallel just enough.Second grafting material 2 is provided with and is used for not only guaranteeing the adhesive property of bonding part but also guarantees sealing.Therefore, wish second grafting material 2 is applied on the whole periphery on (support frame 26) surface of front panel 32 along circuit.First grafting material 1 is provided with and is used for strengthening the adhesive property of bonding part.Therefore, though first grafting material 1 is applied on the whole periphery on (support frame 26) of front panel 32 surface in this embodiment, be not always to need to use such method.Specifically, first grafting material 1 can be provided with discontinuously along second grafting material 2 that is arranged in the circuit.But, in this case, because first grafting material is stipulated the height (thickness) of second grafting material, therefore also need be to be provided with in abutting connection with (side by side) relation.Shown in Fig. 4 A and 4B, engage easily in order to make second grafting material 2, basal layer 4a and 4b also can be pre-formed on support frame 26 and front panel 32.
(step S2: pressing steps)
Subsequently, distance piece 8 is arranged in the wiring 27 and 28 (with reference to figure 2E).On the surface of the support frames 26 that apply with first and second grafting materials 1 and 2, be extruded (with reference to figure 2F and Fig. 2 G) towards (the front panel 32) surface on the above-mentioned surface of support frame 26.Fig. 3 A is the plane graph at the state of Fig. 2 G.Therefore, 2 distortion of second grafting material and its height reduce gradually and are consistent with the height of first grafting material 1.Therefore, second grafting material contacts with front panel 32 together with first grafting material 1.
(step S3: heating steps)
Subsequently, have only the part of first material 1 to be heated and melt, then, have only another part different to be heated and melt, and this step further only repeats necessary number of times (with reference to figure 2H) with above-mentioned part.Just, first grafting material, 1 piecemeal sequentially heats and melts.Specifically, plate 32 has pushed under the situation that is engaged in support frame 26 via second grafting material 2 in front, and extruding is cancelled and has only a part that first grafting material 1 will be melted partly, partly be heated.Fig. 3 C is the plane graph under the state of Fig. 2 G.At each heating steps, the heating (with reference to figure 3B-1) partly simultaneously of a plurality of positions of first grafting material 1 or a plurality of part perhaps has only a position or a part can heat (with reference to figure 3B-2) partly.In heating steps, wish to heat and melt whole first grafting material 1 by heating for multiple times first grafting material 1 in the heating location that changes first grafting material 1.
The cancellation extruding is just enough between the step of Fig. 2 G to Fig. 2 H.That is to say, after second grafting material 2 is extruded and is deformed to the height of first grafting material 1 shown in Fig. 2 G, push and to cancel, perhaps when keeping squeezed state, till the processing of extruding can proceed to the heating steps of Fig. 2 H.In heating steps, shown in Fig. 5 A to Fig. 5 C, in first grafting material, 1 scanning heating location, can sequentially heat and melt first grafting material 1.
(step S4: cooling step)
Cool off the part that is heated and melts of first grafting material 1.Therefore, when support frame 26 and front panel 32 during by 2 sealings of second grafting material, they firmly fix by first grafting material 1.
(step S5: baking step)
In order to improve the vacuum degree in the space in the envelope 10, under predetermined temperature (first temperature), dry after the heating steps.Specifically, envelope 10 is arranged in the vacuum chamber (not shown).When find time by steam vent 7 in the inside of envelope 10, the vacuum degree in the vacuum chamber is reduced to about 10 -3Pa and whole envelope 10 are heated, thereby activate not volatilizable getter 37.And, steam vent 7 usefulness encapsulants 6 and seal cover 5 sealings, thereby form imaging device 11.Though wish seal cover 5 by with back plate 22 identical materials manufacturings, it can be by infusible metal or the manufacturing of its alloy such as Al (aluminium), Ti (titanium), Ni (nickel) etc. when the vacuum drying.
Fig. 6 is the curve chart that illustrates for the compressible notion of pressure.Suppose that the height at the starting stage grafting material is set to z (0), pressure P (Pa) down the height of grafting material be set to z (P), and high deformation is set to Δ z (P)=z (0)-z (P), compressibility is defined as:
Δz(P)/z(0)=1-z(P)/z(0)
Compressibility represent since strain in compression on the short transverse and because the summation of the compression of plastic deformation on short transverse.When compressibility equals 0, this means that the situation lower compression ratio that compression is not carried out and is illustrated in compressibility and increases is easier to carry out." second grafting material to the compressibility of pressure greater than the compressibility of first grafting material to pressure " means that in the pressure limit of supposition, the compressibility of second grafting material surpasses the compressibility of first grafting material.In other words, " first grafting material to the compressibility of pressure less than the compressibility of second grafting material to pressure " means that the compressibility of first grafting material is lower than the compressibility of second grafting material in the pressure limit of supposition.The pressure limit of this supposition is not always to need continuous width (scope), but can be provided with discontinuously.
Hope is measured the height z (P) of grafting material and the relation between the pressure P (Pa) under the essential temperature (for example, 350 ℃, 430 ℃ etc.) in advance in room temperature (25 ℃) and these steps at least.Because actual compressibility not only depends on the material of grafting material, and depends on the deformation extent of cross sectional shape, size and layout surface, therefore when measuring compressibility, wish to determine measuring condition according to the processing that will carry out.And, particularly, utilizing under the situation of low-melting metal material etc., because the compressibility of material also depends on material width, therefore wish under the width that reality is used, to measure.
In Fig. 6, the compressibility of two kinds of materials is by illustrating temperature as parameter.According to the material of Class1, even if down it can be out of shape in room temperature (25 ℃) when exerting pressure, and under 350 ℃ and 430 ℃ easy deformation more.According to the material of type 2, though it is indeformable down room temperature (25 ℃) and 350 ℃ when the pressure that applies up to about 50MPa, its is out of shape under 430 ℃ when exert pressure.In this embodiment, the material of type 2 is as first grafting material 1, and the material of Class1 is as second grafting material.Therefore, second grafting material to the compressibility of pressure greater than the compressibility of first grafting material to pressure.
The grafting material that need can be used in the envelope of imaging device satisfies following conditions.
1. thermal endurance: the thermal endurance in the baking step (above-mentioned steps S5) in a vacuum.
2. air-tightness: the air-tightness that is suitable for keeping high vacuum as time goes by.
3. adhesive property: to the adhesive property of engaged parts (frame parts, panel material).
4. discharge characteristic: low discharge characteristic.
As first grafting material 1 of the condition that satisfies above-mentioned condition and Fig. 6, can mention dry so as the melted glass that burnouts to major general's organic binder bond, such as metal or its alloy of Al (aluminium), Ti (titanium), Ni (nickel) etc.As second grafting material 2, can mention metal or its alloy such as In (indium), Sn (tin), Al (aluminium), Cu (copper), Au (gold), Ag (silver) etc.Such as the low-melting-point metal of In (indium), Sn (tin) etc., or the low-melting-point metal that uses the alloy of In-Ag or Sn-Ag to make is one of second grafting material 2 material of wishing most.
When at room temperature from Fig. 2 F when the state of Fig. 2 G is exerted pressure to second grafting material 2 because the material of Class1 at room temperature is out of shape, it reduces highly gradually and it is deformed to the height of grafting material 1.But because first grafting material 1 of the material of use pattern 2 is indeformable under 50MPa, the thickness of second grafting material 2 becomes stable under the height of first grafting material 1, and no longer reduces.Just, because the compression of second grafting material 2 is subjected to the restriction of first grafting material 1, the possibility that therefore thickness of second grafting material 2 fluctuates along with the position during pressing steps reduces greatly.
Because heating steps carries out under about 430 ℃ (second temperature), first grafting material 1 also is melted and compression takes place easily.But, because first grafting material 1 heats in this way and melts, thereby the only part of first grafting material 1 is heated and melts, and only another part different with this part are heated then and melt, that is to say, first grafting material, 1 piecemeal sequentially heats and melts as mentioned above, is not that whole first grafting material 1 melts simultaneously.In other words, because first grafting material 1 does not have the pressure of the part support of heating and fusing from front panel, are so-called supporting leg parts as them.The global shape of first grafting material 1 is held.Therefore, even if at heating steps, the possibility that the thickness of second grafting material 2 fluctuates along with the position reduces greatly.
And, after the heating steps, find time under about 350 ℃ (first temperature) of the temperature of first grafting material in being lower than heating steps and dry (with reference to figure 2H).But because the compressibility of first grafting material equals 0 substantially under this temperature, therefore first grafting material 1 is indeformable.Even if therefore at baking step, the possibility that the thickness of second grafting material 2 fluctuates along with the position reduces greatly.By this way, the possibility that the thickness of second grafting material 2 of realization sealing function fluctuates along peripheral length in pressurization steps, heating steps, baking step reduces, and can produce more reliable sealing performance.
Though in the example of Fig. 6, first compression of grafting material 1 in pressurization steps is substantially equal to 0, even if when very little distortion takes place, if the compressibility of first grafting material is less than the compressibility of second grafting material 2, then the compression of second grafting material 2 still can be prevented from.
(example)
Below with reference to instantiation the present invention is described in further detail.Imaging device in each example has front panel 32 and back plate 22 (with reference to figure 1) below.In the plate 22 of back, a plurality of (240 row * 720 row) surface conductive electron emitting device 27 with simple cells arranged in matrix on substrate of glass 21, so that be electrically connected on directions X wiring 28 and Y direction wiring 29.In front in the plate 32, the metal gasket 36 that the aluminium film forms is formed on the fluorescent film 34 as image forming part, so that have the thickness of 0.1 μ m by sputtering method.And titanium film forms so that have the thickness of 0.1 μ m by the electron beam vacuum vapour deposition method as not volatilizable getter 37.
Example 1 (applying oven dry+indium behind the melted glass+attached (tack: target is local fastening or fixing))
At first, room temperature, 350 ℃ and 430 ℃ measure respectively as shown in Figure 6 pressure and the relation between the compressibility of grafting material.In this example, its thickness indeclinable melted glass (type 2 among Fig. 6) under 350 ℃ is used as first grafting material 1.Even if soft and indium that at room temperature also can pressurize and be out of shape is as second grafting material 2 than first grafting material 1.
Step a
Back plate 22 and support frame 26 usefulness melted glass 3 engage (Fig. 2 A).
Step b
Subsequently, be applied on the whole periphery of support frame 26 by using distributor by the pastel that mixes terpinol, elvasite (trade mark of a kind of product of E.I.Du Pont Company) and obtain as the melted glass of the basic material of first grafting material 1 precursor, so that have the thickness of about 0.5mm and the width of 2mm (Fig. 2 B) as first grafting material 1.
Step c
The precursor of first grafting material 1 that applies in step b is 430 ℃ of down oven dry, and burnouted such as the organic material of terpinol etc. etc., thereby to form thickness be that 0.3mm and width are first grafting material 1 (Fig. 2 C) of 2mm.
Steps d
Thickness is that 5mm and width be 2mm by second grafting material 2 of indium manufacturing are the inboard (Fig. 2 D) that the basal layer 4a of 5 μ m is arranged on first grafting material 1 along width as 2mm and film thickness by using ultrasonic welding device on the entire circumference of support frame 26.Basal layer 4a is pre-formed by drying silver-colored pastel.
Step e
After this, distance piece 8 is arranged on that wiring is gone up so that it highly is lower than the height of second grafting material 2 and the height of first grafting material 1 (Fig. 2 E) no better than.
Step f, g
Back plate 22 that distance piece 8 is disposed thereon and width are that 2mm and film thickness are that the front panel 32 that the basal layer 4b of 5 μ m has formed thereon is arranged on preposition (Fig. 2 F), thereby the front panel 32 and first grafting material 1 are come in contact.Just, second grafting material 2 is extruded and flattening deformation is guaranteed air-tightness (Fig. 2 G, Fig. 3 A) to the thickness of first grafting material 1 and by second grafting material 2.Basal layer 4b is pre-formed by drying silver-colored pastel.
Step h
Subsequently, converged from the light of Halogen lamp LED emission from front panel 32 1 sides and a plurality of positions (Fig. 2 H, Fig. 3 B-1) of irradiation first grafting material 1 simultaneously, thereby allowed the fusing of first grafting material, 1 piecemeal.Therefore, formation has the envelope 10 (seeing Fig. 2 H, Fig. 3 C) of front panel 32, support frame 26, back plate 22.
Step I
Subsequently, envelope 10 is disposed in the vacuum chamber (not shown).When the inside of envelope 10 vacuumized by steam vent 7, the vacuum degree in the vacuum chamber was reduced to about 10 -3Pa and whole envelope 10 are heated to 350 ℃, thereby activate not volatilizable getter 37.Therefore, steam vent 7 is sealed by the encapsulant 6 of indium manufacturing with by the seal cover 5 of substrate of glass manufacturing, thereby forms imaging device 11 (Fig. 1,2I, 4A and 4B).
In the example of the imaging device of making as mentioned above 11, because first grafting material 1 partly and partly melts (step h), the height of first grafting material 1 (melted glass) does not change.Thereby, keep the thickness of second grafting material 2 (indium).And also in step I, though indium enters molten state as second grafting material 2 when heating down for 350 ℃, owing to the melted glass as first grafting material 1 does not melt, thereby the thickness of second grafting material 2 (indium) is held.Therefore, can obtain to have the imaging device of fabulous hermetic seal.Because front panel 32 and support frame 26 are fixed by first grafting material 1 and support frame 26 is fixing by melted glass 3 with back plate 22, the predetermined relative positions relation between these parts also is held.
(example 2) (applying oven dry+indium behind the melted glass+attached (tack: target is local fastening or fixing)+laser)
In this example, in step h, use laser irradiation.Specifically, effective diameter is that 0.8mm, power are that 100W, wavelength are semiconductor laser a plurality of positions (Fig. 3 B-1) of irradiation first grafting material 1 partly, partly and simultaneously of 810nm, thereby first grafting material 1 can be melted.Therefore, formation has the envelope 10 (Fig. 3 C) of front panel 32, support frame 26 and back plate 22.Other steps are identical with example 1.
In the imaging device of making as mentioned above, by using laser irradiation, first grafting material 1 partly, fusing partly, thereby engage front panel 32 and support frame 26.Therefore, the thickness of second grafting material (indium) 2 is easier is held and further improves air-tightness.Specifically, if use laser irradiation, even if at very narrow regional laser irradiation accurately, and localized heating can more effectively be carried out.Therefore, improve thickness (highly) uniformity and the higher air-tightness of acquisition of second grafting material 2.
(example 3) (apply melted glass after oven dry+indium+whole periphery+laser)
In this example, shown in Fig. 5 A to 5C, at step h, when scanning first grafting material partly, partly and continuously, laser irradiation is irradiation first grafting material (Fig. 5 B) sequentially, thereby first grafting material 1 can be melted.Therefore, formation has the envelope 10 (Fig. 5 C) of panel 32, support frame 26 and back plate 22.Other steps are identical with example 1.
In this example of the imaging device of making as mentioned above, first grafting material 1 melts continuously, partly and partly, and front panel 32 and support frame 26 are engaged.Therefore, even if first grafting material 1 itself also can keep sealing property and improve the air-tightness of imaging device.In addition, also can improve reproducibility and improvement manufacturing variation.
(example 4) (foliated glass melt+indium+whole periphery+laser)
In this example, after second grafting material 2 was set up, width was that 2mm, thickness are the melted glass of sheet of oven dry in advance of 300 μ m is arranged on second grafting material, 2 whole peripheries as first grafting material 1 the outside.Other steps are similar to example 1.
In this example of the imaging device of making as mentioned above, first grafting material 1 melts continuously, partly and partly, and front panel 32 and support frame 26 are engaged.Therefore, even if first grafting material 1 itself also can keep sealing property and improve the air-tightness of imaging device.In addition, also can improve reproducibility and improvement manufacturing variation.And, in this example, to dry in advance with flake shape owing to melted glass, the step of Fig. 2 B can be saved, and the deposition step of second grafting material 2 (Fig. 2 D) can at first be carried out, or the like.Therefore, has the effect that increases the processing degree of freedom.
(example 5) (aluminium+indium+whole periphery+laser)
In this example, width be 2mm and thickness be Al (aluminium) paper tinsel of 50 μ m as first grafting material 1, and width is that 2mm and thickness are that the indium of 100 μ m is as second grafting material 2.Other steps are similar to example 4.Al is chosen as material, under normal temperature and 350 ℃, second grafting material 2 hard (its compressibility is littler) that it is made than indium.
In this example of the imaging device of making as mentioned above, obtain to be similar to the effect in the example 4.By using aluminium foil, the step of Fig. 2 B can be saved, and the deposition step of second grafting material 2 (Fig. 2 D) can at first be carried out, or the like.Therefore, has the effect that increases the processing degree of freedom.Because use metal, the exhaust when vacuumizing and dry can reduce, and improves the vacuum degree of envelope.
(example 6) (melted glass+indium+whole periphery+laser)
In this example, as shown in Figure 7, by the pastel that mixes terpinol, elvasite (trade mark of a kind of product of E.I.Du Pont Company) and obtain as the melted glass of the basic material of first grafting material 1, by using distributor to be applied to be heated on 80 ℃ the outside of width, so that have the thickness of about 0.5mm and the width of 2mm as the whole periphery on a surface of the support frame 26 of 4mm.After this, support frame 26 is turned around, be placed on the aluminium sheet, the extruding and the distortion and become flat so that have the thickness of 0.4mm.Thereafter, same pastel is applied on another surface of support frame 26, so that have the width of 4mm and the thickness of 0.8mm.That is, melted glass sequentially offers two apparent surfaces of support frame 26.Subsequently, support frame 26 is 380 ℃ of interim down oven dry, and thereafter, support frame 26 is peeled off and turned around from aluminium sheet.Do not become as yet that flat melt contact with the back plate and support frame 26 is arranged in pre-position on the back plate 22.Thereafter, support frame 26 is 430 ℃ of oven dry down.Width be 2mm be used to engage the oven dry of first grafting material 1 of support frame 26 and back plate 22 and the oven dry of melted glass 3 is carried out simultaneously, thereby obtain the state of Fig. 2 C.The thickness of first grafting material 1 equals 0.3mm in this example.
After this, width is that 2mm and thickness are that the Sn-Ag class alloy of 500 μ m is as second grafting material 2.Step 2F and 2G carry out under 150 ℃.In the step of Fig. 2 I, the Al plate as seal cover 5 and Sn-Ag class alloy as encapsulant 6.About other steps, the method that use in image-forming apparatus is similar to example 3 forms.The imaging device of this example of making according to method as mentioned above can obtain to be similar to the effect of example 3.
Though described embodiments of the invention and example in the above, the invention is not restricted to top embodiment and example.For example, though in previous embodiment and example the present invention be applicable to that the bonding part of support frame 26 and front panel 32, the present invention can be applied to the bonding part between support frame 26 and the back plate 22.Equally, the present invention also can both be applied to the bonding part of support frame 26 and front panel 32, is applicable to the bonding part of support frame 26 and back plate 22 again.Though in previous embodiment and example, the present invention only is applied to the bonding part of support frame 26 and front panel 32, this be because the bonding part of support frame 26 and back plate 22 can make thicker, and than being easier to guarantee sealing property.Be applied in the present invention under the situation of the support frame 26 and the bonding part of back plate 22, also can with the back plate 22 be arranged in support frame 26 below, first and second grafting materials are applied on the plate 22 of back, and make the distortion of second grafting material by support frame 26.
Though reference example embodiment has described the present invention, should be appreciated that the present invention is not limited to this.The scope of following claim is the explanation according to broad sense, therefore comprises these all modifications and equivalent structure and function.

Claims (14)

1. the manufacture method of a gas-tight container comprises:
The grafting material deposition step, be about to first grafting material and the compressibility of pressure be arranged in greater than compressible second grafting material of first grafting material in the surface positioned opposite to each other of first and second parts that form gas-tight container one, make second grafting material be arranged in along circuit in the surface positioned opposite to each other of first and second parts described one, described first and second grafting materials are arranged to relation side by side, and the height of first grafting material is lower than the height of second grafting material;
Pressing steps, promptly push first and second grafting materials by in the surface positioned opposite to each other of first and second parts another, make first and second grafting materials both contact in the surface positioned opposite to each other of first and second parts described another;
Heating steps, promptly a part of part sequentially heats and melts described first grafting material that another contacts in the surface positioned opposite to each other with first and second parts; And
Cooling step promptly cools off the part of the fusing of described first grafting material.
2. according to the manufacture method of the gas-tight container of claim 1, wherein
Described heating steps comprises a plurality of parts that heat simultaneously and melt described first grafting material.
3. according to the manufacture method of the gas-tight container of claim 1 or 2, wherein
Described heating steps comprises by in the position heating for multiple times in another position change heating part from first grafting material, heats and melts all described first grafting materials.
4. according to the manufacture method of the gas-tight container of claim 3, wherein
Described heating steps comprises localized heating first grafting material.
5. according to the manufacture method of the gas-tight container of claim 1, wherein
Described heating steps comprises by along first grafting material heating location being scanned and heats in succession and melt described first grafting material.
6. according to claim 1,2 and 5 manufacture method of the gas-tight container of any one wherein, wherein said heating steps comprises described first grafting material of localized heating.
7. according to the manufacture method of the gas-tight container of claim 6, wherein said localized heating is carried out with laser.
8. according to the manufacture method of the gas-tight container of claim 6, wherein said localized heating is carried out with the photoirradiation of Halogen lamp LED.
9. the manufacture method of gas-tight container according to Claim 8, wherein
Described first and second parts are formed by glass, and
Described first grafting material is formed by metal or melted glass.
10. according to the manufacture method of the gas-tight container of claim 9, wherein
In the grafting material deposition step, use the melted glass of drying as first grafting material with flake shape.
11. according to the manufacture method of the gas-tight container of claim 9, wherein
In the grafting material deposition step, the aluminium that uses sheet is as first grafting material.
12. the manufacture method of an imaging device, described imaging device comprise electron emitting device and be arranged on image-forming block in the gas-tight container, wherein said gas-tight container is according to any one method manufacturing in the claim 1,2,5,7 to 11.
13. the manufacture method of an imaging device, described imaging device comprise electron emitting device and are arranged on the interior image-forming block of a gas-tight container that wherein said gas-tight container is according to the method manufacturing of claim 6.
14. the manufacture method of an imaging device, described imaging device comprise electron emitting device and are arranged on the interior image-forming block of a gas-tight container that wherein said gas-tight container is according to the method manufacturing of claim 3.
CN2008101317812A 2007-06-27 2008-06-27 Hermetically sealed container and manufacturing method of image forming apparatus using the same Expired - Fee Related CN101335167B (en)

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JP2008144695A JP5025566B2 (en) 2007-06-27 2008-06-02 Airtight container and method for manufacturing image forming apparatus using the same
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JP5590935B2 (en) * 2010-03-29 2014-09-17 キヤノン株式会社 Airtight container manufacturing method
JP2012009318A (en) * 2010-06-25 2012-01-12 Canon Inc Airtight container and method of manufacturing image display device
JP5627370B2 (en) * 2010-09-27 2014-11-19 キヤノン株式会社 Depressurized airtight container and image display device manufacturing method
JP5649216B2 (en) * 2010-12-10 2015-01-07 パナソニック株式会社 Method for manufacturing plasma display panel
US20190105731A1 (en) * 2017-10-06 2019-04-11 GM Global Technology Operations LLC Hot formed bonding in sheet metal panels

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US6840833B1 (en) * 1999-01-29 2005-01-11 Hitachi, Ltd. Gas discharge type display panel and production method therefor
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