CN101330116B - Lithium aluminates substrate structure containing zinc bloom buffer layer - Google Patents
Lithium aluminates substrate structure containing zinc bloom buffer layer Download PDFInfo
- Publication number
- CN101330116B CN101330116B CN2007101113045A CN200710111304A CN101330116B CN 101330116 B CN101330116 B CN 101330116B CN 2007101113045 A CN2007101113045 A CN 2007101113045A CN 200710111304 A CN200710111304 A CN 200710111304A CN 101330116 B CN101330116 B CN 101330116B
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- Prior art keywords
- buffer layer
- lithium aluminate
- lithium
- zinc
- zinc oxide
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Abstract
The invention discloses a lithium aluminate base plate structure with a zinc oxide buffer layer. Lithium aluminate is selected as the base plate, a zinc oxide buffer layer with a monocrystal thin filmis grown on the lithium aluminate base plate, thereby the structure similarity of the non-polar zinc oxide grown on the lithium aluminate base plate is adopted to allow zinc oxide to have the Stark effect to effectively eliminate the quantum confinement in an identical direction, and the lattice match is further realized and the good quality of the crystal interface is achieved, so as to improvethe luminous efficiency and the follow-up component performance. In addition, a heterogeneous junction, a multi-quantum well, a super-lattice or other lower dimensional structures can be further embedded so as to be combined into a photoelectric component, thereby improving the luminous efficiency.
Description
Technical field:
The present invention relates to a kind of lithium aluminate board structure with zinc bloom buffer layer, it utilizes lithium aluminate (LiAlO
2) be substrate nonpolar (non-polar) zinc oxide of growing up, and by its interstructural similitude, make the same direction of zinc oxide tool with effective elimination quantum confinement Philippe Starck effect (QuantumConfined Stark Effect, QCSE).
Background technology:
The short-wave long light-emitting assembly that has broad prospect of application and huge market potential at present, as blue light-emitting diode (Light Emitting Diode, LED) and blue laser light-emitting diode (Las erDiode, LD), although it is obtaining breakthrough aspect preparing based on the blue green light assembly of gallium nitride (GaN) in recent years, but the quality of nitride assembly and life-span still do not reach gratifying degree, and wherein main cause is to lack the desirable backing material that is complementary with this gallium nitride.
The LED that present zinc oxide is done does not popularize, and can't compare with gallium nitride, also lacks the desirable backing material that is complementary with it.See also shown in Figure 3ly, be existing zinc oxide growth schematic diagram.As shown in the figure: modern with a sapphire (Sapphire) substrate 31, and the zinc oxide film 32 of growing up on this sapphire substrate 31 is an example.The strain (strain) that is caused will not cause piezoelectric field about megavolt/square centimeter (MV/cm because this zinc oxide film 32 and these sapphire substrate 31 lattice constants match
2) grade, cause the piezoelectric modulus of these sapphire substrate 31 tops big, via quantum confinement Philippe Starck effect, cause the wave function (wave-function) in electronics and electric hole to cover electric field (screening field) along separately causing in the c shaft space at internal electric field, the equilbrium position of lattice is changed, cause its mismatch ratio up to 13.6%, so that crystal interface degradation, and then the assembly property that influences successive process descend.
So generally not commonly using the person, can't to meet the user required when reality is used.
Summary of the invention:
Technical problem to be solved by this invention is: at above-mentioned the deficiencies in the prior art, a kind of lithium aluminate board structure with zinc bloom buffer layer is provided, utilize this lithium aluminate to be the substrate nonpolar zinc oxide of growing up, and, make the same direction of zinc oxide tool with effective elimination quantum confinement Philippe Starck effect by its interstructural similitude.
In order to solve the problems of the technologies described above, the technical solution adopted in the present invention is: a kind of lithium aluminate board structure with zinc bloom buffer layer, it comprises a substrate, described substrate is the lithium aluminate substrate, growth one nonpolar zinc bloom buffer layer on this lithium aluminate substrate, this zinc bloom buffer layer is a monocrystal thin films.
By this, utilize this lithium aluminate substrate nonpolar zinc oxide of growing up, and, make the same direction of zinc oxide tool, to promote the luminous efficiency of subsequent optical assembly with effective elimination quantum confinement Philippe Starck effect by its interstructural similitude.
Description of drawings:
Fig. 1 is a lithium aluminate substrate schematic diagram of the present invention.
Fig. 2 is the grow up structural representation of zinc bloom buffer layer of the present invention.
Fig. 3 is the structural representation of known substrate growth zinc oxide.
Label declaration:
Sapphire substrate 31 zinc oxide films 32
Embodiment:
See also Fig. 1-shown in Figure 2, be respectively the grow up structural representation of zinc bloom buffer layer of lithium aluminate substrate schematic diagram of the present invention and the present invention.As shown in the figure: the present invention is a kind of lithium aluminate board structure of tool zinc bloom buffer layer, comprises a lithium aluminate (Lithium Aluminum Oxide, LiAlO at least
2) substrate 21 and a zinc bloom buffer layer 22, can effectively eliminate quantum confinement Philippe Starck effect (Quantum Confined Stark Effect, QCSE), to promote the luminous efficiency of subsequent optical assembly.
This lithium aluminate substrate 21 may further be sodium aluminate (Sodium Aluminum Oxide, NaAlO
2), lithium gallium oxide (Lithium Galium Oxide, LiGaO
2), sodium metasilicate (SodiumSilicon Oxide, Na
2SiO
3), sodium metasilicate zinc (Sodium Zinc Silicon Oxide, Na
2ZnSiO
4), lithium metasilicate (Lithium Silicon Oxide, Li
2SiO
3), lithium metasilicate zinc (Lithium Zinc Silicon Oxide, Li
2ZnSiO
4), lithium metasilicate magnesium (LithiumMagnesium Silicon Oxide, Li
2MgSiO
4), lithium metasilicate cadmium (Lithium CadmiumSilicon Oxide, Li
2CdSiO
4), sodium germanate (Sodium Germanium Oxide, Na
2GeO
3), sodium germanate zinc (Sodium Zinc Germanium Oxide, Na
2ZnGeO
4), sodium germanate magnesium (Sodium Magnesium Germanium Oxide, Na
2MgGeO
4), lithium germanate (LithiumGermanium Oxide, LiGeO
3), lithium germanate zinc (Lithium Zinc Germanium Oxide, Li
2ZnGeO
4), lithium germanate magnesium (Lithium Magnesium Germanium Oxide, Li
2MgGeO
4), lithium germanate cadmium (Lithium Cadmium Germanium Oxide, Li
2CdGeO
4), lithium phosphate (Lithium Phosphor Oxide, Li
3PO
4), arsenic acid lithium (Lithium ArsenicOxide, Li
3AsO
4) and lithium vanadate (Lithium Vanadium Oxide, Li
3VO
4) in select one.
Growth one zinc bloom buffer layer 22 on this lithium aluminate substrate 21, and this zinc bloom buffer layer 22 is a monocrystal thin films.By this, utilize nonpolar (non-polar) zinc bloom buffer layer 22 of being grown up on this lithium aluminate substrate 21, because its interstructural similitude, make the same direction of zinc oxide tool with effective elimination quantum confinement Philippe Starck effect, reach lattice match (lattice match) and obtain good crystal interface quality, and the heterojunction of can further growing up, multiple quantum trap (Multiple Quantum Well, MQW) or superlattice be combined into a light, electric assembly, as light-emitting diode, laser diode etc., to promote luminous efficiency.
When utilization is of the present invention, because this lithium aluminate substrate 21 has the crystalline texture similar to this zinc bloom buffer layer 22, therefore the monocrystal thin films shape zinc bloom buffer layer 22 on this lithium aluminate substrate 21 can convert rectangle structure to, and utilize zinc oxygen bond length (Zn-O bonding length) and the close principle of lithia bond length (Li-O bonding length), make the same direction of zinc oxide tool with effective elimination quantum confinement Philippe Starck effect, to promote the luminous efficiency of subsequent optical assembly.
In sum, the present invention has the lithium aluminate board structure of zinc bloom buffer layer, can effectively improve the various shortcoming of prior art, utilize the lithium aluminate substrate nonpolar zinc oxide of growing up, and, make the same direction of zinc oxide tool with effective elimination quantum confinement Philippe Starck effect by its interstructural similitude, to promote the luminous efficiency of subsequent optical assembly, and then it is required to make the present invention more progressive, more practical, more meet the user, has really met the important document of application for a patent for invention, proposes patent application in accordance with the law.
Only the above only is preferred embodiment of the present invention, when not limiting scope of the invention process with this; So all simple equivalent of being done according to the present patent application claim and description of the invention content change and modify, all should still belong in the scope that patent of the present invention contains.
Claims (3)
1. lithium aluminate board structure with zinc bloom buffer layer, it comprises a substrate, it is characterized in that: described substrate is the lithium aluminate substrate, the nonpolar zinc bloom buffer layer of growing up on this lithium aluminate substrate, this zinc bloom buffer layer is a monocrystal thin films.
2. the lithium aluminate board structure with zinc bloom buffer layer according to claim 1, it is characterized in that: further growth heterojunction, multiple quantum trap or superlattice on the described zinc bloom buffer layer, lithium aluminate substrate with zinc bloom buffer layer is combined with heterojunction, multiple quantum trap or superlattice, form an assembly.
3. the lithium aluminate board structure with zinc bloom buffer layer according to claim 2 is characterized in that: described assembly is light-emitting diode or laser diode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2007101113045A CN101330116B (en) | 2007-06-18 | 2007-06-18 | Lithium aluminates substrate structure containing zinc bloom buffer layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2007101113045A CN101330116B (en) | 2007-06-18 | 2007-06-18 | Lithium aluminates substrate structure containing zinc bloom buffer layer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101330116A CN101330116A (en) | 2008-12-24 |
| CN101330116B true CN101330116B (en) | 2010-06-02 |
Family
ID=40205800
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2007101113045A Expired - Fee Related CN101330116B (en) | 2007-06-18 | 2007-06-18 | Lithium aluminates substrate structure containing zinc bloom buffer layer |
Country Status (1)
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|---|---|
| CN (1) | CN101330116B (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1159251A (en) * | 1995-06-08 | 1997-09-10 | 中佛罗里达大学 | Modified wurtzite structrue oxide compounds as substrates for III-V nitride compound semiconductor epitaxial thin film growth |
| US6030886A (en) * | 1996-11-29 | 2000-02-29 | Matsushita Electronics Corporation | Growth of GaN on a substrate using a ZnO buffer layer |
| US6046464A (en) * | 1995-03-29 | 2000-04-04 | North Carolina State University | Integrated heterostructures of group III-V nitride semiconductor materials including epitaxial ohmic contact comprising multiple quantum well |
| CN1614104A (en) * | 2004-09-28 | 2005-05-11 | 中国科学院上海光学精密机械研究所 | Preparation for single-crystal thin film covering layer substrate with r-LiALO2 |
| CN1964081A (en) * | 2005-11-10 | 2007-05-16 | 中国科学院半导体研究所 | A zinc oxide based blue LED and its manufacture method |
-
2007
- 2007-06-18 CN CN2007101113045A patent/CN101330116B/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6046464A (en) * | 1995-03-29 | 2000-04-04 | North Carolina State University | Integrated heterostructures of group III-V nitride semiconductor materials including epitaxial ohmic contact comprising multiple quantum well |
| CN1159251A (en) * | 1995-06-08 | 1997-09-10 | 中佛罗里达大学 | Modified wurtzite structrue oxide compounds as substrates for III-V nitride compound semiconductor epitaxial thin film growth |
| US6030886A (en) * | 1996-11-29 | 2000-02-29 | Matsushita Electronics Corporation | Growth of GaN on a substrate using a ZnO buffer layer |
| CN1614104A (en) * | 2004-09-28 | 2005-05-11 | 中国科学院上海光学精密机械研究所 | Preparation for single-crystal thin film covering layer substrate with r-LiALO2 |
| CN1964081A (en) * | 2005-11-10 | 2007-05-16 | 中国科学院半导体研究所 | A zinc oxide based blue LED and its manufacture method |
Non-Patent Citations (3)
| Title |
|---|
| T. F. Huang等.Growth and Effects of Single-Crystalline ZnO Buffer Layer onGaN Epitaxy.Compound Semiconductors,1997 IEEE International Symposium on.1997,11-14. * |
| 刘彦松 等.利用ZnO缓冲层制备AlN薄膜.压电与声光22 5.2000,22(5),322-325. |
| 刘彦松 等.利用ZnO缓冲层制备AlN薄膜.压电与声光22 5.2000,22(5),322-325. * |
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|---|---|
| CN101330116A (en) | 2008-12-24 |
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Granted publication date: 20100602 Termination date: 20180618 |