CN101308264B - 液晶显示装置 - Google Patents
液晶显示装置 Download PDFInfo
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- CN101308264B CN101308264B CN200810099283.4A CN200810099283A CN101308264B CN 101308264 B CN101308264 B CN 101308264B CN 200810099283 A CN200810099283 A CN 200810099283A CN 101308264 B CN101308264 B CN 101308264B
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Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1345—Conductors connecting electrodes to cell terminals
- G02F1/13452—Conductors connecting driver circuitry and terminals of panels
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133342—Constructional arrangements; Manufacturing methods for double-sided displays
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1345—Conductors connecting electrodes to cell terminals
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Liquid Crystal (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
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Families Citing this family (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090051046A1 (en) * | 2007-08-24 | 2009-02-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method for the same |
| CN101593056A (zh) * | 2008-05-30 | 2009-12-02 | 康准电子科技（昆山）有限公司 | 输入/输出装置 |
| KR102012160B1 (ko) | 2009-05-02 | 2019-08-19 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 패널 |
| CN102109933B (zh) * | 2009-12-24 | 2014-06-11 | 乐金显示有限公司 | 具有显示面板和光学传感框架的组件及使用其的显示系统 |
| US8759917B2 (en) * | 2010-01-04 | 2014-06-24 | Samsung Electronics Co., Ltd. | Thin-film transistor having etch stop multi-layer and method of manufacturing the same |
| US8385059B2 (en) * | 2010-08-02 | 2013-02-26 | E Ink Holdings Inc. | Multi-displays electronic book having a retractable display |
| US8854220B1 (en) * | 2010-08-30 | 2014-10-07 | Exelis, Inc. | Indicating desiccant in night vision goggles |
| US9477263B2 (en) * | 2011-10-27 | 2016-10-25 | Apple Inc. | Electronic device with chip-on-glass ambient light sensors |
| JP2014032314A (ja) * | 2012-08-03 | 2014-02-20 | Sharp Corp | マルチディスプレイ装置 |
| US11074025B2 (en) * | 2012-09-03 | 2021-07-27 | Semiconductor Energy Laboratory Co., Ltd. | Display device and method for manufacturing the same |
| US9507557B2 (en) * | 2012-09-14 | 2016-11-29 | Sharp Kabushiki Kaisha | Display device and display method |
| CN103793116B (zh) * | 2012-10-28 | 2016-12-21 | 宝宸（厦门）光学科技有限公司 | 触控面板 |
| TWM472858U (zh) * | 2013-07-18 | 2014-02-21 | Univ Chung Hua | 外界觸發記憶型液晶光學薄膜 |
| KR102077525B1 (ko) | 2013-07-30 | 2020-02-14 | 엘지디스플레이 주식회사 | 표시장치 및 그 제조 방법 |
| GB2569465B (en) * | 2014-07-28 | 2019-09-18 | Illinois Tool Works | Real-time video extensometer |
| CN106537486B (zh) | 2014-07-31 | 2020-09-15 | 株式会社半导体能源研究所 | 显示装置及电子装置 |
| US20180173071A1 (en) * | 2015-07-10 | 2018-06-21 | View, Inc. | Bird friendly electrochromic devices |
| US11307475B2 (en) | 2015-07-10 | 2022-04-19 | View, Inc. | Bird friendly electrochromic devices |
| WO2017025835A1 (en) * | 2015-08-07 | 2017-02-16 | Semiconductor Energy Laboratory Co., Ltd. | Display panel, information processing device, and driving method of display panel |
| JP2018022038A (ja) * | 2016-08-03 | 2018-02-08 | 株式会社半導体エネルギー研究所 | 表示装置および電子機器 |
| KR102636515B1 (ko) * | 2017-01-06 | 2024-02-15 | 삼성디스플레이 주식회사 | 유기발광 표시장치 |
| CN106771832B (zh) | 2017-02-23 | 2019-08-16 | 京东方科技集团股份有限公司 | 一种电路检测装置、电路检测方法及应用其的显示装置 |
| JP2019045777A (ja) * | 2017-09-06 | 2019-03-22 | セイコーエプソン株式会社 | 電気光学装置、電子機器及びプロジェクター |
| JP6813461B2 (ja) | 2017-09-19 | 2021-01-13 | タツタ電線株式会社 | シートセンサ |
| CN107750041A (zh) * | 2017-11-22 | 2018-03-02 | 科成精密模塑科技无锡有限公司 | 多功能车载音响精密模塑面板 |
| KR102554431B1 (ko) * | 2018-09-05 | 2023-07-13 | 삼성전자주식회사 | 반도체 장치 및 반도체 장치 제조 방법 |
| CN209327741U (zh) | 2018-10-26 | 2019-08-30 | 苹果公司 | 电子设备 |
| CN110471527A (zh) * | 2019-07-22 | 2019-11-19 | Oppo广东移动通信有限公司 | 振动装置及显示装置、终端设备 |
| CN110428739B (zh) * | 2019-07-31 | 2022-02-11 | 广州国显科技有限公司 | 显示面板和显示装置 |
| JP2021120689A (ja) * | 2020-01-30 | 2021-08-19 | 株式会社ジャパンディスプレイ | 表示装置 |
| TWI856528B (zh) * | 2023-02-24 | 2024-09-21 | 元太科技工業股份有限公司 | 顯示裝置 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060012539A1 (en) * | 2004-07-13 | 2006-01-19 | Tsutomu Matsuhira | Display device |
| CN1255879C (zh) * | 2001-03-23 | 2006-05-10 | 精工爱普生株式会社 | 电光基板装置及其制造方法、电光装置、电子装置 |
| CN1794339A (zh) * | 2004-12-23 | 2006-06-28 | 三星电子株式会社 | 接触可检测显示装置 |
| CN1848226A (zh) * | 2005-04-11 | 2006-10-18 | 三星电子株式会社 | 用于显示设备的选通驱动设备及其显示设备 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3483714B2 (ja) * | 1996-09-20 | 2004-01-06 | 株式会社半導体エネルギー研究所 | アクティブマトリクス型液晶表示装置 |
| US20050253773A1 (en) * | 2002-09-25 | 2005-11-17 | Kanetaka Sekiguchi | Display |
| WO2004068910A1 (ja) * | 2003-01-24 | 2004-08-12 | Semiconductor Energy Laboratory Co. Ltd. | 発光装置及びその製造方法、並びに前記発光装置を用いた電気機器 |
| US20050037815A1 (en) * | 2003-08-14 | 2005-02-17 | Mohammad Besharat | Ambient light controlled display and method of operation |
| JP2005156766A (ja) * | 2003-11-25 | 2005-06-16 | Nec Corp | 表示システムおよびそれを用いた電子機器 |
| US8704803B2 (en) * | 2004-08-27 | 2014-04-22 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic appliance using the display device |
| US7916263B2 (en) * | 2004-12-02 | 2011-03-29 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| US20060232495A1 (en) * | 2005-04-19 | 2006-10-19 | Toppoly Optoelectronics Corp. | Dual panel display |
| JP4926426B2 (ja) * | 2005-08-12 | 2012-05-09 | 株式会社半導体エネルギー研究所 | 電子機器 |
-
2008
- 2008-05-15 JP JP2008127961A patent/JP2009003436A/ja not_active Withdrawn
- 2008-05-15 US US12/120,732 patent/US20080284934A1/en not_active Abandoned
- 2008-05-16 CN CN200810099283.4A patent/CN101308264B/zh not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1255879C (zh) * | 2001-03-23 | 2006-05-10 | 精工爱普生株式会社 | 电光基板装置及其制造方法、电光装置、电子装置 |
| US20060012539A1 (en) * | 2004-07-13 | 2006-01-19 | Tsutomu Matsuhira | Display device |
| CN1794339A (zh) * | 2004-12-23 | 2006-06-28 | 三星电子株式会社 | 接触可检测显示装置 |
| CN1848226A (zh) * | 2005-04-11 | 2006-10-18 | 三星电子株式会社 | 用于显示设备的选通驱动设备及其显示设备 |
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| Publication number | Publication date |
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| JP2009003436A (ja) | 2009-01-08 |
| US20080284934A1 (en) | 2008-11-20 |
| CN101308264A (zh) | 2008-11-19 |
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