CN101300640A - 实现磁隧道结电流传感器的方法 - Google Patents
实现磁隧道结电流传感器的方法 Download PDFInfo
- Publication number
- CN101300640A CN101300640A CNA2006800404795A CN200680040479A CN101300640A CN 101300640 A CN101300640 A CN 101300640A CN A2006800404795 A CNA2006800404795 A CN A2006800404795A CN 200680040479 A CN200680040479 A CN 200680040479A CN 101300640 A CN101300640 A CN 101300640A
- Authority
- CN
- China
- Prior art keywords
- mtj
- layer
- active circuit
- electric current
- circuit parts
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
- H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
- H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/01—Manufacture or treatment
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Hall/Mr Elements (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Measuring Fluid Pressure (AREA)
- Measuring Magnetic Variables (AREA)
Abstract
Description
Claims (18)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/262,054 | 2005-10-28 | ||
US11/262,054 US7271011B2 (en) | 2005-10-28 | 2005-10-28 | Methods of implementing magnetic tunnel junction current sensors |
PCT/US2006/041148 WO2007053341A2 (en) | 2005-10-28 | 2006-10-20 | Methods of implementing magnetic tunnel junction current sensors |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101300640A true CN101300640A (zh) | 2008-11-05 |
CN101300640B CN101300640B (zh) | 2012-01-11 |
Family
ID=37996915
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2006800404795A Expired - Fee Related CN101300640B (zh) | 2005-10-28 | 2006-10-20 | 实现磁隧道结电流传感器的方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7271011B2 (zh) |
CN (1) | CN101300640B (zh) |
TW (1) | TWI398643B (zh) |
WO (1) | WO2007053341A2 (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013078615A1 (en) * | 2011-11-29 | 2013-06-06 | Honeywell International Inc. | Devices, methods, and systems for sensing current |
CN102292648B (zh) * | 2009-02-25 | 2015-06-03 | 艾沃思宾技术公司 | 磁场感测器件 |
CN111417858A (zh) * | 2017-11-30 | 2020-07-14 | Inl-国际伊比利亚纳米技术实验室 | 频率传感器 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7547480B2 (en) * | 2005-10-28 | 2009-06-16 | Everspin Technologies, Inc. | Magnetic tunnel junction pressure sensors and methods |
CN101828261B (zh) * | 2007-10-18 | 2012-05-23 | Nxp股份有限公司 | 背侧层的磁检测 |
TWI457582B (zh) * | 2011-01-20 | 2014-10-21 | Tatung Co | 平面式磁場探測棒 |
US9489607B2 (en) * | 2013-05-17 | 2016-11-08 | Infineon Technologies Ag | Semiconductor device and an identification tag |
TWI769819B (zh) * | 2021-05-18 | 2022-07-01 | 宇能電科技股份有限公司 | 電流感測器與裝置 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0874244B1 (de) * | 1997-04-19 | 2002-01-30 | LUST ANTRIEBSTECHNIK GmbH | Verfahren zum Messen von elektrischen Strömen in n Leitern sowie Vorrichtung zur Durchführung des Verfahrens |
US5940319A (en) * | 1998-08-31 | 1999-08-17 | Motorola, Inc. | Magnetic random access memory and fabricating method thereof |
DE19858868C2 (de) * | 1998-12-19 | 2003-06-18 | Micronas Gmbh | Hallsensor |
US6153443A (en) * | 1998-12-21 | 2000-11-28 | Motorola, Inc. | Method of fabricating a magnetic random access memory |
US20020024333A1 (en) * | 2000-07-07 | 2002-02-28 | Hubert Maiwald | Current sensor |
US6429640B1 (en) * | 2000-08-21 | 2002-08-06 | The United States Of America As Represented By The Secretary Of The Air Force | GMR high current, wide dynamic range sensor |
JP4149647B2 (ja) * | 2000-09-28 | 2008-09-10 | 株式会社東芝 | 半導体記憶装置及びその製造方法 |
JP2004079033A (ja) * | 2002-08-12 | 2004-03-11 | Renesas Technology Corp | 不揮発性半導体記憶装置 |
KR100923299B1 (ko) * | 2003-01-28 | 2009-10-23 | 삼성전자주식회사 | 자기 램의 자기 터널 접합층 형성 방법 |
US7123530B2 (en) * | 2003-10-09 | 2006-10-17 | Micron Technology, Inc. | AC sensing for a resistive memory |
US6946698B1 (en) * | 2004-04-02 | 2005-09-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | MRAM device having low-k inter-metal dielectric |
-
2005
- 2005-10-28 US US11/262,054 patent/US7271011B2/en not_active Expired - Fee Related
-
2006
- 2006-10-20 WO PCT/US2006/041148 patent/WO2007053341A2/en active Application Filing
- 2006-10-20 CN CN2006800404795A patent/CN101300640B/zh not_active Expired - Fee Related
- 2006-10-27 TW TW095139683A patent/TWI398643B/zh active
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102292648B (zh) * | 2009-02-25 | 2015-06-03 | 艾沃思宾技术公司 | 磁场感测器件 |
WO2013078615A1 (en) * | 2011-11-29 | 2013-06-06 | Honeywell International Inc. | Devices, methods, and systems for sensing current |
CN111417858A (zh) * | 2017-11-30 | 2020-07-14 | Inl-国际伊比利亚纳米技术实验室 | 频率传感器 |
Also Published As
Publication number | Publication date |
---|---|
WO2007053341A3 (en) | 2007-11-15 |
TW200728735A (en) | 2007-08-01 |
CN101300640B (zh) | 2012-01-11 |
US7271011B2 (en) | 2007-09-18 |
US20070099308A1 (en) | 2007-05-03 |
TWI398643B (zh) | 2013-06-11 |
WO2007053341A2 (en) | 2007-05-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN101278338B (zh) | 磁性隧道结温度传感器 | |
US7547480B2 (en) | Magnetic tunnel junction pressure sensors and methods | |
CN101300640B (zh) | 实现磁隧道结电流传感器的方法 | |
US7510883B2 (en) | Magnetic tunnel junction temperature sensors and methods | |
US6593608B1 (en) | Magneto resistive storage device having double tunnel junction | |
CN103280235B (zh) | 具有单独读取和写入路径的磁性隧道结装置 | |
US7239543B2 (en) | Magnetic tunnel junction current sensors | |
US6538917B1 (en) | Read methods for magneto-resistive device having soft reference layer | |
US6576969B2 (en) | Magneto-resistive device having soft reference layer | |
US6794695B2 (en) | Magneto resistive storage device having a magnetic field sink layer | |
CN101238520B (zh) | 嵌入了mram的智能功率集成电路 | |
US6795281B2 (en) | Magneto-resistive device including soft synthetic ferrimagnet reference layer | |
CN1886801B (zh) | 用于在磁阻存储器件编程期间进行有源场补偿的方法和装置 | |
KR100374795B1 (ko) | 자기 랜덤 액세스 메모리 소자 | |
CN103339672A (zh) | 用于磁传感器阵列的制造工艺和布局 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: AIWO SPINTEKNOLOGY, INC. Free format text: FORMER OWNER: FREESCALE SEMICONDUCTOR INC. Effective date: 20090508 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20090508 Address after: Arizona, USA Applicant after: Freescale Semiconductor Inc. Address before: Texas in the United States Applicant before: Fisical Semiconductor Inc. |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C56 | Change in the name or address of the patentee | ||
CP01 | Change in the name or title of a patent holder |
Address after: Arizona, USA Patentee after: Everspin Technologies Inc. Address before: Arizona, USA Patentee before: Freescale Semiconductor Inc. |
|
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120111 Termination date: 20181020 |