CN101299132A - Aligning mark used for photolithography equipment aligning system and its use method - Google Patents
Aligning mark used for photolithography equipment aligning system and its use method Download PDFInfo
- Publication number
- CN101299132A CN101299132A CNA2008100381239A CN200810038123A CN101299132A CN 101299132 A CN101299132 A CN 101299132A CN A2008100381239 A CNA2008100381239 A CN A2008100381239A CN 200810038123 A CN200810038123 A CN 200810038123A CN 101299132 A CN101299132 A CN 101299132A
- Authority
- CN
- China
- Prior art keywords
- grating
- alignment
- alignment mark
- aligning
- mark
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Landscapes
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
The present invention provides an aligning mark which is used for the aligning system of the photo-etching device and a using method thereof. The aligning mark comprising at least three groups of raster with different periods is used. The +/-1 grade diffraction lights of three groups of raster are used in the aligning process. Two large-period raster in three groups of raster are used for coarse alignment. A small-period raster is used for refined alignment. The alignment position error caused by the asymmetrical deformation of the aligning mark is reduced. The small period raster and the large period raster are spatially staggered. The corresponding interface images are spatially divided in the image surface. The crosstalk problem of signal is effectively settled. The energy usage of light source is increased. The intensity of aligning signal and the dynamic range of detection are facilitated to increase.
Description
Technical field
The present invention relates to integrated circuit or other microdevices and make the lithographic equipment in field, the particularly alignment mark of alignment system.
Background technology
Lithographic equipment of the prior art is mainly used in the manufacturing of integrated circuit (IC) or other microdevices.By lithographic equipment, the multilayer mask with different mask patterns under accurate alignment case successively exposure image be coated with on the silicon chip of photoresist.Present lithographic equipment is divided into two classes substantially, one class is the stepping lithographic equipment, the mask pattern single exposure is imaged on an exposure area of silicon chip, silicon chip moves with respect to mask subsequently, next exposure area is moved to mask pattern and projection objective below, again mask pattern is exposed in another exposure area of silicon chip, repeat the picture that this process all exposure areas on silicon chip all have corresponding mask patterns.Another kind of is the step-scan lithographic equipment, and in said process, mask pattern is not the single exposure imaging, but the scanning mobile imaging by the projection light field.In the mask pattern imaging process, mask and silicon chip move with respect to optical projection system and projected light beam simultaneously, finish silicon wafer exposure.
Critical step is that mask is aimed at silicon chip in the lithographic equipment.After exposing on silicon chip, the ground floor mask pattern removes in the slave unit, after the PROCESS FOR TREATMENT that silicon chip is correlated with, carry out the exposure of second layer mask pattern, but for guarantee second layer mask pattern and subsequently the picture of mask pattern mask and silicon chip accurately need be aimed at respect to the accurate location of exposed mask pattern image on the silicon chip.Because the IC device of photoetching technique manufacturing needs multiexposure, multiple exposure to form multilayer circuit in silicon chip, for this reason, require to realize the accurate aligning of mask and silicon chip in the lithographic equipment.When characteristic dimension requires more hour, will become strict more to the requirement of alignment precision.
Prior art has two kinds of alignment scheme.A kind of is the TTL technique of alignment that sees through camera lens, alignment mark on the laser lighting mask images in the silicon chip plane by object lens, mobile silicon chip platform, make the reference marker scanning alignment mark imaging on the silicon chip platform, the light intensity of the imaging of sampling simultaneously, correct alignment position is promptly represented in the largest light intensity position of detector output, and this aligned position provides zero reference for the position measurement of the laser interferometer that is used for monitoring wafer platform position and moves.Another kind is an OA off-axis alignment technology, is positioned at the reference mark of datum plate on a plurality of alignment marks on the silicon chip platform and the silicon chip platform by the off-axis alignment systematic survey, realizes that silicon chip is aimed at and silicon chip platform aligning; Reference marker is aimed at mask alignment mark on the silicon chip platform, realizes mask registration; Can obtain the position relation of mask and silicon chip thus, realize mask and silicon chip aligning.
At present, the most alignment so that adopts of main flow lithographic equipment is a grating alignment.Grating alignment is meant that illumination beam on the grating type alignment mark diffraction takes place, and diffraction light carries the full detail about alignment mark structure.The multilevel diffraction light scatters from the phase alignment grating with different angles, after filtering zero order light by spatial filter, gather ± 1 order diffraction light, the perhaps raising that requires along with CD, gather multi-level diffraction light (comprising senior) simultaneously at the reference surface interference imaging, utilize picture to scan at certain orientation with reference to grating, survey and signal Processing, determine the centering adjustment position through photodetector with corresponding.
A kind of situation of prior art is (referring to (1) Chinese invention patent, publication number: CN1506768A, denomination of invention: the alignment system and the method that are used for etching system), the ATHENA off-axis alignment system of a kind of 4f system architecture that Holland ASML company is adopted, this alignment system adopts ruddiness, green glow two-source illumination at the Lights section; And adopt voussoir array or wedge group to realize the overlapping and coherent imaging of alignment mark multi-level diffraction light, and on image planes, imaging space is separated; The registration signal of ruddiness and green glow is separated by a polarization beam splitter prism; By surveying the alignment mark picture, obtain the registration signal of sinusoidal output through transmitted light intensity with reference to grating.
This alignment system is by surveying the aligned position error that (comprising diffraction light senior time), the multilevel diffraction light caused to reduce the alignment mark asymmetrical deformation of alignment mark.Concrete positive and negative level time overlapping, the coherent imaging of hot spot correspondence that adopts voussoir array or wedge group to realize the alignment mark multi-level diffraction light, the deviation of diffraction light light beams at different levels by voussoir array or wedge group makes alignment mark be used for the grating grating pictures at different levels that the x direction aims at and is arranged in picture in image planes along the y direction simultaneously; The grating grating pictures at different levels that are used for y direction aligning are arranged in picture in image planes along the x direction, and different cycles grating picture scans a situation with reference to grating, the cross-interference issue of effective address signal simultaneously when having avoided alignment mark grating pictures scanning at different levels correspondence with reference to grating.But when using the voussoir array, the face type and the angle of wedge coherence request of two voussoirs that the positive and negative same stages of birefringence is inferior are very high; And the requirement of the processing and manufacturing of wedge group, assembling and adjustment is also very high, and the specific implementation engineering difficulty of getting up is bigger, costs dearly.
The situation of another kind of prior art is (referring to (2) Chinese invention patent, publication number: 200710044152.1, denomination of invention: a kind of alignment system that is used for lithographic equipment), this alignment system adopts has three periods phase grating of thickness combination, the first-order diffraction light that only utilizes these three cycles is as registration signal, obtain high alignment precision when can realize big capture range, only use the first-order diffraction light in each cycle, can obtain stronger signal intensity, improve system signal noise ratio, need not come separately senior diffraction components of multichannel by regulating devices such as wedges, simplify light path design and debugging difficulty, but alignment mark distribution in one line on silicon chip and datum plate in the alignment system, reduced the utilization factor of light source, and this arrangement mode alignment mark in alignment scanning respectively to organize grating picture scanning corresponding during with reference to grating, the grating picture of different cycles scans a situation with reference to grating simultaneously, can cause the cross-interference issue of sweep signal, be unfavorable for the aligning of lithographic equipment.
Summary of the invention
The object of the present invention is to provide a kind of alignment mark and using method thereof that is used for the lithographic equipment alignment system, to realize reducing the aligned position error that the alignment mark asymmetrical deformation causes, it is corresponding during with reference to grating to avoid in the alignment scanning alignment mark respectively to organize the scanning of grating picture, the grating picture of different cycles scans a situation with reference to grating simultaneously, the cross-interference issue of effective address signal, improve the capacity usage ratio of light source simultaneously, improve the dynamic range of registration signal intensity and detection.
To achieve the above object, the invention provides a kind of alignment mark that is used for the lithographic equipment alignment system, this alignment mark is marking groove (Scribe Lane) alignment mark, comprises first grating, second grating and the 3rd grating.This first grating, second grating are different with the cycle of the 3rd grating; The arrangement of this first grating, second grating and the 3rd grating is not on same straight line; This first grating, second grating and the 3rd grating ± 1 order diffraction light by spatial filtering respectively coherent imaging be positioned on the reference grating of image planes.
Bigger two gratings are as the large period grating cycle in three gratings, are used for aligned position and catch; The grating of cycle minimum is used for fine alignment as the minor cycle grating.
This alignment mark can be that the large period grating is arranged in the marking groove for the treatment of aligning direction, and the minor cycle grating is arranged in and the marking groove for the treatment of the aligning direction vertical direction; Also can be that the large period grating is arranged in and the marking groove for the treatment of that aligning direction is vertical, the minor cycle grating be arranged in the marking groove for the treatment of aligning direction.
This alignment mark can also comprise other gratings that are different from this first grating, second grating and the 3rd grating, other gratings ± 1 order diffraction light by spatial filtering respectively coherent imaging be positioned on the reference grating of image planes.
The grizzly bar direction of the grating of this alignment mark can be parallel with aligning direction, also can be vertical with aligning direction.
Two groups of these alignment marks can be arranged with two-dimensional approach respectively, are used for the aligning of the both direction of quadrature simultaneously.
This with reference to grating along the length of cycle direction can be slightly less than also can greater than correspondence ± length of 1 grade of grating picture.
This can only be used for the aligning of an aligning direction with reference to grating, also can be used for the aligning of two orthogonal directionss simultaneously.
The present invention also provides a kind of method of using this mark, comprises the steps:
(1) picture of first grating of this alignment mark, second grating and the 3rd grating obtains the first grating alignment signal, the second grating alignment signal and the 3rd grating alignment signal respectively through changing with reference to the transmitted light intensity after the Grating Modulation;
(2) obtain the rough center of alignment mark according to two large period grating phase informations; According to minor cycle grating phase information, and obtain the accurate center of alignment mark in conjunction with the rough center of alignment mark.
(3) the first grating picture of this alignment mark, the second grating picture and the 3rd grating picture overlap with reference to the grating center with corresponding respectively when aligned position, and promptly phase place obtains coupling.
First grating of this alignment mark, second grating and the 3rd grating are imaged on corresponding with reference on the grating through a projection optical system, described projection optical system requires to have the wave aberration less than 0.25 λ.
This step (1) is that moving with corresponding of corresponding grating picture carried out signal scanning with reference to grating and obtained the first grating alignment signal, the second grating alignment signal and the 3rd grating alignment signal respectively by alignment mark first grating, second grating and the 3rd grating mobile.Further, this first grating alignment signal, the second grating alignment signal and the 3rd grating alignment signal are to survey by highly sensitive photodetector.
Compared with prior art, the present invention has adopted the alignment mark of the grating that comprises at least three group different cycles, in the alignment procedures only with three groups of gratings ± 1 order diffraction light, two large period gratings are used for coarse alignment in three groups of gratings, the minor cycle grating is used for fine alignment, has reduced the aligned position error that the alignment mark asymmetrical deformation causes.Minor cycle grating and large period grating spatial offset are arranged, be that its corresponding interference image space on image planes separates, it is corresponding during with reference to grating to have avoided in the alignment scanning alignment mark respectively to organize the scanning of grating picture, the grating picture of different cycles scans a situation with reference to grating simultaneously, the cross-interference issue of effective address signal simultaneously, is arranged compact more like this, improve the capacity usage ratio of light source, helped improving the dynamic range of registration signal intensity and detection.
Description of drawings
Fig. 1 is the used alignment system of lithographic equipment of the present invention and the total arrangement between the lithographic equipment, principle of work structural representation;
Fig. 2 is the used alignment system structural representation of embodiment of the present invention;
Fig. 3 is the used alignment system intermediate frequency spectrum of an embodiment of the present invention face filtering pore size distribution synoptic diagram;
Fig. 4 is the synoptic diagram of the silicon chip alignment mark first embodiment marking groove mark of the present invention;
Fig. 5 is the synoptic diagram of the silicon chip alignment mark first embodiment two-dimensional marker of the present invention;
Fig. 6 is the synoptic diagram of the silicon chip alignment mark first embodiment correspondence of the present invention with reference to grating;
Fig. 7 is the synoptic diagram that the illumination hot spot of alignment system of the present invention scans the first embodiment silicon chip alignment mark;
Fig. 8 is that alignment mark first embodiment of the present invention scans through alignment system, the registration signal synoptic diagram after signal gain is handled;
Fig. 9 is the synoptic diagram of the silicon chip alignment mark second embodiment marking groove mark of the present invention;
Figure 10 is the synoptic diagram of the silicon chip alignment mark second embodiment two-dimensional marker of the present invention;
Figure 11 is the synoptic diagram of the silicon chip alignment mark second embodiment correspondence of the present invention with reference to grating;
Figure 12 is the synoptic diagram that the illumination hot spot of alignment system of the present invention scans the second embodiment silicon chip alignment mark;
Figure 13 is that alignment system second embodiment of the present invention scans through alignment system, the registration signal synoptic diagram after signal gain is handled.
In the accompanying drawing: 1, illuminator; 2 masks; 3, mask platform; 4, projection optical system; 5, off-axis alignment system; 6, silicon chip; 7, silicon chip platform; 8, datum plate; 9, drive system; 10, catoptron; 11, laser interferometer; 12, master control system; 13, servo-drive system; 14, drive system; 15, laser interferometer; 16, catoptron; 201, light beam; 202, bundling device; 203, monofilm polarization maintaining optical fibre; 204, the polarizer; 205, lens; 206, illuminating aperture diaphragm; 207, lens; 208, reflecting prism; 209, flat board; 210, λ/4 wave plates; 211, the object lens of large-numerical aperture; 212, silicon chip mark; 213, plated film reflecting surface; 214, beam splitter; 215, lens; 216, Transmission Fibers; 217, CCD camera; 218, bi-directional beam divider; 219, spatial filter; 220, lens combination; 221, with reference to grating; 222, Transmission Fibers; 223, photodetector; 224, spatial filter; 225, lens combination; 226, with reference to grating; 227, Transmission Fibers; 228, photodetector; 400X, alignment mark; 400Y, alignment mark; 401, first grating; 402, second grating; 403, the 3rd grating; 404, first grating; 405, second grating; 406, the 3rd grating; 500, two-dimensional marker; 601, grating; 602, grating; 603, grating; 604, grating; 605, grating; 606, grating; 607, optical fiber; 608, optical fiber; 609, optical fiber; 610, optical fiber; 611, optical fiber; 612, optical fiber; 701, circular illumination hot spot; 702, circular illumination hot spot; RM, alignment mark; FM, reference mark; IL, exposing light beam; P1, the first grating alignment signal; P2, the second grating alignment signal; P3, the 3rd grating alignment signal; EF, exposure field.
Embodiment
Below in conjunction with accompanying drawing the specific embodiment of the present invention is further described.
Fig. 1 shows the alignment system of the used lithographic equipment of the present invention and the total arrangement between the lithographic equipment, principle of work structural representation.The formation of lithographic equipment comprises: the illuminator 1 that is used to provide exposing light beam; Be used to support the mask holder and the mask platform 3 of mask 2, the alignment mark RM that mask pattern is arranged on the mask 2 and have periodic structure; Be used for the mask pattern on the mask 2 is projected to the projection optical system 4 of silicon chip 6; Be used to support the silicon chip support and the silicon chip platform 7 of silicon chip 6, the datum plate 8 that is carved with reference mark FM is arranged on the silicon chip platform 7, the alignment mark of periodicity optical structure is arranged on the silicon chip 6; Be used for the off-axis alignment system 5 that mask and silicon chip are aimed at; The catoptron 10,16 and the laser interferometer 11,15 that are used for mask platform 3 and 7 position measurements of silicon chip platform, and by the mask platform 3 of master control system 12 controls and the servo-drive system 13 and the drive system 9,14 of silicon chip platform 7.
Wherein, illuminator 1 comprises that a light source, one make the lens combination of illumination homogenising, catoptron, a condenser (all not shown among the figure).As a light source cell, adopt KrF excimer laser (wavelength 248nm), ArF excimer laser (wavelength 193nm), F2 laser instrument (wavelength 157nm), Kr2 laser instrument (wavelength 146nm), Ar2 laser instrument (wavelength 126nm) or use ultrahigh pressure mercury lamp (g-line, i-line) etc.The exposing light beam IL of illuminator 1 uniform irradiation is radiated on the mask 2, includes the mark RM of mask pattern and periodic structure on the mask 2, is used for mask registration.Mask platform 3 can move in perpendicular to the X-Y plane of illuminator optical axis (overlapping with the optical axis AX of projection objective) through drive system 14, and upward moves with specific sweep velocity in predetermined direction of scanning (being parallel to X-direction).The position of mask platform 3 in plane of motion recorded by Doppler's two-frequency laser interferometer 15 precisions by the catoptron 16 that is positioned on the mask platform 3.The positional information of mask platform 3 sends to master control system 12 by laser interferometer 15 through servo-drive system 13, and master control system 12 drives mask platform 3 according to the positional information of mask platform 3 by drive system 14.
Projection optical system 4 (projection objective) is positioned at mask platform shown in Figure 13 belows, and its optical axis AX is parallel to Z-direction.Since adopt two core structures far away and have predetermined scale down as 1/5 or 1/4 refraction type or refractive and reflective optical system as projection optical system, so when the mask pattern on the exposing light beam illuminating mask 2 of illuminator 1 emission, the image that mask pattern becomes to dwindle on the silicon chip 6 that is coated with photoresist through projection optical system.
Silicon chip 6 is provided with the alignment mark of periodic structure, and the datum plate 8 that comprises reference mark FM is arranged on the silicon chip platform 7, and alignment system 5 realizes that by silicon chip alignment mark and reference mark FM silicon chip 6 is aimed at and silicon chip platform 7 is aimed at respectively.In addition, coaxial alignment unit (not shown) is aimed at the reference mark FM of datum plate 8 on the silicon chip platform with mask alignment mark RM, realizes mask registration.The alignment information of alignment system 5 is transferred to master control system 12 together in conjunction with the alignment information of coaxial alignment unit, and after data processing, drive system 9 drives silicon chip platform 7 and moves the aligning of realizing mask and silicon chip 6.
Fig. 2 is the alignment system structural representation of first embodiment of the invention, and this alignment system mainly is made up of light source module, lighting module, image-forming module, detecting module, signal Processing and locating module (not illustrating among the figure) etc.Light source module mainly comprises light source, shutter, optoisolator and the radio frequency modulator (not illustrating among the figure) that two wavelength are provided.Lighting module comprises Transmission Fibers and lamp optical system.Image-forming module mainly comprises: the object lens 211 of large-numerical aperture, beam splitter 214, bi-directional beam divider 218, spatial filter 219,224 and lens combination 211,220,225.Detecting module comprises with reference to grating 221,226, Transmission Fibers 216,222,227, CCD camera 217 and photodetector 223,228.Signal Processing and locating module mainly comprise photosignal conversion and amplification, analog to digital conversion and digital signal processing circuit etc.
The alignment system principle is: the light beam 201 of light source module output (comprises two kinds of choosing wavelengths, also can use simultaneously) enter light beam bundling device 202, be transferred to the polarizer 204 via monofilm polarization maintaining optical fibre 203, lens 205, illuminating aperture diaphragm 206 and lens 207, reflecting prism 208 on dull and stereotyped 209 impinges perpendicularly on the object lens 211 that achromatic λ/4 wave plates 210 enter large-numerical aperture (4F lens preceding group) then, light beam is assembled through the object lens 211 of large-numerical aperture and is shone on the silicon chip mark 212 concurrent gaining interest and penetrate, 212 at different levels diffraction lights of mark return along former road and enter beam splitter 214 through dull and stereotyped 209, beam splitter 214 reflexes to the CCD light path through lens 215 with the sub-fraction diffraction light through plated film reflecting surface 213, Transmission Fibers 216, image in and be used for observing the picture situation that is marked as on the CCD217, another part diffraction light along the light path transmissive by 218 two kinds of wavelength light beams of Amici prism separately, enter different light paths respectively, through corresponding spatial filter 219, (what the present invention needed is respectively each grating ± 1 order diffraction light for 224 diffraction lighting level that select to need time, and scioptics system (220,225, back group of 4F lens) the corresponding order of diffraction time interference of light picture is become at reference grating 221, on 226, the mark order of diffraction time interference image is via reference grating 221, the signal that 226 scannings obtain is through Transmission Fibers 222,227 are transported to photodetector 223,228 carry out acquisition of signal.
Fig. 3 is the structural representation of the used spatial filter 219,224 of the present invention, being divided into vertical and horizontal both direction arranges, be respectively applied for the alignment mark ± 1 order diffraction light filtering of both direction, differ very little owing to be used for the cycle of two large period gratings that the aligning scope catches in the alignment mark, its ± that 1 order diffraction light beam is gone up distance at 4F system spectrum face (spatial filter position) is very near, so also can allow two large period gratings ± 1 order diffraction light beam passes through in same filtering hole.
The principal character of this alignment system is, first grating, second grating and the 3rd grating by surveying alignment mark in image planes ± 1 order diffraction light coherent imaging is after change with reference to the light intensity of Grating Modulation, obtained the center of alignment mark by the phase information of optical signal transmissive.Wherein obtain the coarse position information of alignment mark, obtain the precise position information of alignment mark by the registration signal of the 3rd grating of alignment mark by the registration signal of first grating of alignment mark and second grating.
Fig. 4 is the structural representation of silicon chip alignment mark among Fig. 1.Alignment mark is marking groove (Scribe Lane) alignment mark, and dutycycle is 1: 1 a phase grating structure, and wherein Fig. 4 (a) is used for the alignment mark 400X that the x direction is aimed at.Alignment mark 400X is arranged in the position of marking groove referring to Fig. 7.Alignment mark 400X comprises the grating of three groups of different cycles: first grating 401, second grating 402 and the 3rd grating 403, and wherein the grating cycle of first grating 401 is P1, and the grating cycle of second grating 402 is P2, and the grating cycle of the 3rd grating 403 is P3.Three groups of gratings of alignment mark 400X are arranged along the direction dislocation perpendicular to aligning direction.In addition, the position between three groups of gratings can be changed arbitrarily, and promptly the position of any one group of grating can exchange with other stop positions in three groups of gratings.To being used for two groups of large period gratings that same direction is aimed at: first grating 401 and second grating 402, select the different grating cycles can improve the capture range of alignment mark, capture range is expressed as P1 * P2/[2 (P1-P2)].Grating cycle P1, P2 are more or less the same, and (1 ± r%) P1, wherein the r value is between 5 to 15 generally to get P2=.For example, 401 cycles of first grating are 13 μ m, and 402 cycles of second grating are 12 μ m, and then capture range is 78 μ m.Cycle P3＜the P1 of the 3rd grating 403, and P3＜P2 are used for fine alignment.For example, the cycle of the 3rd grating 403 can be 2 μ m.Cycle value between three groups of gratings will be mated mutually, promptly require filtering hole on filtering face be merely able to allow grating separately ± 1 order diffraction light transmission, other level time diffraction lights are owing to being blocked outside the filtering hole.
Equally, shown in Fig. 4 (b), be used for alignment mark 400Y that the y direction aims at and comprise that first grating 404, second grating 405 are identical with three groups of grating cycles of alignment mark 400X with 406, three groups of grating cycles of the 3rd grating.The position of three groups of gratings of alignment mark 400Y in marking groove (Scribe Lane) as shown in Figure 7.
Fig. 5 is the two-dimensional marker 500 of first embodiment, and the marking groove mark of 400X, 400Y both direction is combined with reference to optical grating construction according to Fig. 6, forms two-dimensional marker, can realize that promptly both direction scans the mark of aligning simultaneously.Mark is made up of totally six groups of gratings, and grating 401,402 and 403 combinations realize that the x directions aim at, and grating 404,405 and 406 combinations realize that the y directions aim at.
In addition, alignment mark of the present invention can further include the 4th grating that the cycle is different from above-mentioned three groups of gratings, even more grating.
This alignment system alignment mark three groups of grating cycles can be according to the position of diffracted beam on frequency surface separately, carry out suitable cycle coupling, so that carry out spatial filtering, can produce registration signal with strong Technological adaptability, high sensitivity and high s/n ratio, the alignment system repeatability precision can reach 3-5nm, satisfy fully live width 90nm and 90nm following to alignment request.
As shown in Figure 6, comprise six groups of amplitude gratings with reference to grating: grating 601, grating 602, grating 603, grating 604, grating 605 and grating 606, correspond respectively to first grating 401 of alignment mark 400X, the 402 and the 3rd grating 403 of second grating, the diffraction ± 1 grade grating picture of first grating 404, second grating 405 and the 3rd grating 406 of alignment mark 400Y.Six groups of amplitude gratings can be slightly less than or also can be greater than the length of 1 grade of grating picture of correspondence along the length of cycle direction.Be respectively arranged with the Transmission Fibers bundle behind six groups of amplitude gratings, comprise optical fiber 607,608,609,610,611 and 612, to be transferred to the corresponding photo detector array with reference to the transmitted light of respectively organizing grating of grating, in alignment mark 400X and 400Y scanning process, obtain the registration signal of alignment mark x and y direction, as shown in Figure 8, comprise the first grating alignment signal P1, the second grating alignment signal P2 and the 3rd grating alignment signal P3 after the process gain process.
Fig. 7 has provided alignment mark structure shown in Figure 4 laying situation in the silicon chip marking groove, on silicon chip between the exposure field EF in the orthogonal marking groove, be laid with alignment mark 400X and 400Y, alignment mark 400X is used for the x direction and aims at, wherein mark large period grating P1 and P2 are positioned at the marking groove of x direction, mark minor cycle grating P3 is positioned at the marking groove of the y direction adjacent with the x direction marking groove at mark large period grating P1 and P2 place, can be above mark large period grating P1 and P2, also can below.Alignment mark 400Y is used for the y direction and aims at, wherein mark large period grating P1 and P2 are positioned at the marking groove of y direction, mark minor cycle grating P3 is positioned at the marking groove of the x direction adjacent with the y direction marking groove at mark large period grating P1 and P2 place, can be at mark large period grating P1 and P2 right-hand, also can be at the left of mark large period grating P1 and P2.For preventing the signal cross-talk from the IC product structure, the grating of alignment mark 400X and 400Y should be positioned at the zone line of marking groove, and width for example is 72 μ m or 36 μ m less than the scribe lanes width.Carrying out the x direction on time, along with the displacement of silicon chip platform 7 along the x direction, circular illumination hot spot 701 is along x scanning direction alignment mark 400X; Carrying out the y direction on time, along with the displacement of silicon chip platform 7 along the y direction, circular illumination hot spot 702 is along y scanning direction alignment mark 400Y.
The second embodiment of the present invention is to adopt the lithographic equipment of above-mentioned alignment system, its alignment mark, two-dimensional alignment mark, with reference to grating, alignment mark in marking groove laying and sweep signal respectively referring to Fig. 9～Figure 13.Its embodiment is identical with first embodiment, and has adopted corresponding label among the figure, so do not give unnecessary details again at this.
Claims (12)
1, a kind of alignment mark that is used for the lithographic equipment alignment system is characterized in that:
Described alignment mark is the marking groove alignment mark, comprising:
First grating;
Second grating; With
The 3rd grating;
Described first grating, second grating are different with the cycle of the 3rd grating; The arrangement of described first grating, second grating and the 3rd grating is not on same straight line; Described first grating, second grating and the 3rd grating ± 1 order diffraction light by spatial filtering respectively coherent imaging be positioned on the reference grating of image planes.
2, the alignment mark that is used for the lithographic equipment alignment system according to claim 1 is characterized in that: bigger two gratings are as the large period grating cycle in three gratings, are used for aligned position and catch; The grating of cycle minimum is used for fine alignment as the minor cycle grating.
3, the alignment mark that is used for the lithographic equipment alignment system according to claim 2, it is characterized in that: described alignment mark can be that the large period grating is arranged in the marking groove for the treatment of aligning direction, and the minor cycle grating is arranged in and the marking groove for the treatment of the aligning direction vertical direction; Also can be that the large period grating is arranged in and the marking groove for the treatment of that aligning direction is vertical, the minor cycle grating be arranged in the marking groove for the treatment of aligning direction.
4, the alignment mark that is used for the lithographic equipment alignment system according to claim 1, it is characterized in that: described alignment mark can also comprise other gratings that are different from described first grating, second grating and the 3rd grating, described other gratings ± 1 order diffraction light by spatial filtering respectively coherent imaging be positioned on the reference grating of image planes.
5, the alignment mark that is used for the lithographic equipment alignment system according to claim 1 is characterized in that: the grizzly bar direction of the grating of described alignment mark, can be parallel with aligning direction, and also can be vertical with aligning direction.
6, the alignment mark that is used for the lithographic equipment alignment system according to claim 1 is characterized in that: two groups of described alignment marks can be arranged with two-dimensional approach respectively, are used for the aligning of the both direction of quadrature simultaneously.
7, the alignment mark that is used for the lithographic equipment alignment system according to claim 1 is characterized in that: described with reference to grating along the length of cycle direction can be slightly less than also can greater than correspondence ± length of 1 grade of grating picture.
8, the alignment mark that is used for the lithographic equipment alignment system according to claim 1 is characterized in that: describedly can only be used for the aligning of an aligning direction with reference to grating, also can be used for the aligning of two orthogonal directionss simultaneously.
9, a kind of described method that is used for the alignment mark of lithographic equipment alignment system of claim 1 of using is characterized in that, comprises the steps:
(1) picture of first grating of described alignment mark, second grating and the 3rd grating obtains the first grating alignment signal, the second grating alignment signal and the 3rd grating alignment signal respectively through changing with reference to the transmitted light intensity after the Grating Modulation;
(2) obtain the rough center of alignment mark according to two large period grating phase informations; According to minor cycle grating phase information, and obtain the accurate center of alignment mark in conjunction with the rough center of alignment mark;
(3) the first grating picture of described alignment mark, the second grating picture and the 3rd grating picture overlap with reference to the grating center with corresponding respectively when aligned position, and promptly phase place obtains coupling.
10, method according to claim 9, it is characterized in that, first grating of alignment mark, second grating and the 3rd grating are imaged on corresponding with reference on the grating through a projection optical system, described projection optical system requires to have the wave aberration less than 0.25 λ.
11, method according to claim 9, it is characterized in that described step (1) is that moving with corresponding of corresponding grating picture carried out signal scanning with reference to grating and obtained the first grating alignment signal, the second grating alignment signal and the 3rd grating alignment signal respectively by alignment mark first grating, second grating and the 3rd grating mobile.
12, method according to claim 11 is characterized in that, the described first grating alignment signal, the second grating alignment signal and the 3rd grating alignment signal are to survey by highly sensitive photodetector.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200810038123 CN101299132B (en) | 2008-05-27 | 2008-05-27 | Aligning mark used for photolithography equipment aligning system and its use method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200810038123 CN101299132B (en) | 2008-05-27 | 2008-05-27 | Aligning mark used for photolithography equipment aligning system and its use method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101299132A true CN101299132A (en) | 2008-11-05 |
| CN101299132B CN101299132B (en) | 2010-06-02 |
Family
ID=40078989
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200810038123 Active CN101299132B (en) | 2008-05-27 | 2008-05-27 | Aligning mark used for photolithography equipment aligning system and its use method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101299132B (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102385263A (en) * | 2010-08-25 | 2012-03-21 | 中芯国际集成电路制造(上海)有限公司 | Method for aligning previous-layer graphs and photomask applicable to method |
| CN102445865A (en) * | 2011-11-08 | 2012-05-09 | 上海华力微电子有限公司 | Photo-etching graphic alignment marking method capable of reducing alignment bias of photo-etching machine |
| CN103076724A (en) * | 2013-02-01 | 2013-05-01 | 中国科学院光电研究院 | Projection objective wave aberration on-line detection device and method based on double-beam interference |
| CN105511238A (en) * | 2014-09-26 | 2016-04-20 | 中芯国际集成电路制造(上海)有限公司 | Lithography alignment mark structure and formation method and formation method of semiconductor structure |
| CN105814491A (en) * | 2013-10-30 | 2016-07-27 | Asml荷兰有限公司 | Inspection apparatus and methods, substrates having metrology targets, lithographic system and device manufacturing method |
| WO2017140528A1 (en) * | 2016-02-19 | 2017-08-24 | Asml Netherlands B.V. | Method of measuring a structure, inspection apparatus, lithographic system, device manufacturing method and wavelength-selective filter for use therein |
| CN107122690A (en) * | 2011-01-31 | 2017-09-01 | 手持产品公司 | With flash of light correction sight and the terminal alternately illuminated |
| CN109739027A (en) * | 2019-01-16 | 2019-05-10 | 北京华捷艾米科技有限公司 | Luminous point array projection mould group and depth camera |
| CN110824865A (en) * | 2019-11-29 | 2020-02-21 | 中国科学院微电子研究所 | Alignment error measuring method and device |
| US11906907B2 (en) | 2017-12-12 | 2024-02-20 | Asml Netherlands B.V. | Apparatus and method for determining a condition associated with a pellicle |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07270122A (en) * | 1994-03-30 | 1995-10-20 | Canon Inc | Displacement detection device, aligner provided with said displacement detection device and manufacture of device |
| CN100587608C (en) * | 2007-07-24 | 2010-02-03 | 上海微电子装备有限公司 | Aligning system used for photolithography equipment |
| CN100527000C (en) * | 2007-08-31 | 2009-08-12 | 上海微电子装备有限公司 | Aligning mark and aligning system |
-
2008
- 2008-05-27 CN CN 200810038123 patent/CN101299132B/en active Active
Cited By (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102385263B (en) * | 2010-08-25 | 2014-10-01 | 中芯国际集成电路制造(上海)有限公司 | Method for aligning previous-layer graphs and photomask applicable to method |
| CN102385263A (en) * | 2010-08-25 | 2012-03-21 | 中芯国际集成电路制造(上海)有限公司 | Method for aligning previous-layer graphs and photomask applicable to method |
| CN107122690B (en) * | 2011-01-31 | 2020-06-09 | 手持产品公司 | Terminal with flash correction sight and alternate illumination |
| CN107122690A (en) * | 2011-01-31 | 2017-09-01 | 手持产品公司 | With flash of light correction sight and the terminal alternately illuminated |
| CN102445865A (en) * | 2011-11-08 | 2012-05-09 | 上海华力微电子有限公司 | Photo-etching graphic alignment marking method capable of reducing alignment bias of photo-etching machine |
| CN103076724A (en) * | 2013-02-01 | 2013-05-01 | 中国科学院光电研究院 | Projection objective wave aberration on-line detection device and method based on double-beam interference |
| CN105814491A (en) * | 2013-10-30 | 2016-07-27 | Asml荷兰有限公司 | Inspection apparatus and methods, substrates having metrology targets, lithographic system and device manufacturing method |
| US11022900B2 (en) | 2013-10-30 | 2021-06-01 | Asml Netherlands B.V. | Inspection apparatus and methods, substrates having metrology targets, lithographic system and device manufacturing method |
| CN105814491B (en) * | 2013-10-30 | 2017-12-05 | Asml荷兰有限公司 | Check apparatus and method, there is substrate, etching system and the device making method for measuring target |
| US9958791B2 (en) | 2013-10-30 | 2018-05-01 | Asml Netherlands B.V. | Inspection apparatus and methods, substrates having metrology targets, lithographic system and device manufacturing method |
| US10761432B2 (en) | 2013-10-30 | 2020-09-01 | Asml Netherlands B.V. | Inspection apparatus and methods, substrates having metrology targets, lithographic system and device manufacturing method |
| CN105511238A (en) * | 2014-09-26 | 2016-04-20 | 中芯国际集成电路制造(上海)有限公司 | Lithography alignment mark structure and formation method and formation method of semiconductor structure |
| KR20180110104A (en) * | 2016-02-19 | 2018-10-08 | 에이에스엠엘 네델란즈 비.브이. | Structure measuring method, inspection apparatus, lithography system, device manufacturing method, and wavelength-selective filter used therein |
| US10365565B2 (en) | 2016-02-19 | 2019-07-30 | Asml Netherlands B.V. | Method of measuring a structure, inspection apparatus, lithographic system, device manufacturing method and wavelength-selective filter for use therein |
| KR102106937B1 (en) * | 2016-02-19 | 2020-05-07 | 에이에스엠엘 네델란즈 비.브이. | Structure measurement method, inspection apparatus, lithography system, device manufacturing method and wavelength-selective filter used therein |
| JP2019509477A (en) * | 2016-02-19 | 2019-04-04 | エーエスエムエル ネザーランズ ビー．ブイ． | Structure measuring method, inspection apparatus, lithography system, device manufacturing method, and wavelength selective filter used in the same |
| CN108700824A (en) * | 2016-02-19 | 2018-10-23 | Asml荷兰有限公司 | The method of measurement structure checks equipment, lithography system, device making method and the wavelength selecting filter wherein used |
| US10775704B2 (en) | 2016-02-19 | 2020-09-15 | Asml Netherlands B.V. | Method of measuring a structure, inspection apparatus, lithographic system, device manufacturing method and wavelength-selective filter for use therein |
| WO2017140528A1 (en) * | 2016-02-19 | 2017-08-24 | Asml Netherlands B.V. | Method of measuring a structure, inspection apparatus, lithographic system, device manufacturing method and wavelength-selective filter for use therein |
| US11906907B2 (en) | 2017-12-12 | 2024-02-20 | Asml Netherlands B.V. | Apparatus and method for determining a condition associated with a pellicle |
| CN109739027A (en) * | 2019-01-16 | 2019-05-10 | 北京华捷艾米科技有限公司 | Luminous point array projection mould group and depth camera |
| CN109739027B (en) * | 2019-01-16 | 2021-07-27 | 北京华捷艾米科技有限公司 | Light spot array projection module and depth camera |
| CN110824865A (en) * | 2019-11-29 | 2020-02-21 | 中国科学院微电子研究所 | Alignment error measuring method and device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101299132B (en) | 2010-06-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101299132B (en) | Aligning mark used for photolithography equipment aligning system and its use method | |
| CN101943865B (en) | Alignment marks for photoetching equipment and alignment method | |
| CN101251724B (en) | Aligning system, method and lithographic device thereof | |
| CN101566800B (en) | Aligning system and aligning method for lithography equipment | |
| CN101165597B (en) | Aligning system and lightscribing device using the system | |
| CN101251725B (en) | Aligning system, mark, method for lithographic device and lithographic device thereof | |
| CN102314091B (en) | Lithography machine capable of adjusting size of lighting spot of alignment system | |
| CN101329514B (en) | System and method for aligning photolithography apparatus | |
| CN102540778B (en) | Measuring system and photoetching device using same | |
| CN101149564B (en) | Alignment mark and its imaging optical system and imaging method | |
| CN101135860B (en) | Light scribing device and Aligning system and aligning method used for light scribing device | |
| CN101286010B (en) | Aligning system for photolithography equipment and its alignment method and photolithography equipment | |
| CN1949087B (en) | Aligning system of photoetching apparatus and steping combined system of said aligning system thereof | |
| CN100468213C (en) | Alignment system for photoetching device and stage jointing grating system | |
| CN101241313B (en) | Lithographic equipment aligning system based on machine vision and alignment method | |
| CN100527000C (en) | Aligning mark and aligning system | |
| CN101551593A (en) | Alignment system for lithography equipment, lithography equipment and aligning method thereof | |
| CN101526750B (en) | Alignment system for photolithographic device and photolithographic device applying same | |
| CN101446775B (en) | Alignment light source apparatus | |
| CN101158818A (en) | Alignment apparatus, alignment method and imagery quality detecting method | |
| CN1963679A (en) | Alignment mark structure for aligning wafer | |
| CN101510055B (en) | Alignment system and alignment method for photolithography equipment | |
| CN100587605C (en) | Aligning mark structure for aligning system of photolithography equipment | |
| CN102402140B (en) | Alignment system | |
| CN102890433B (en) | Alignment device and alignment method for lithography equipment |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 201203 Zhangjiang High Tech Park, Shanghai, Zhang Dong Road, No. 1525 Co-patentee after: Shanghai Micro And High Precision Mechine Engineering Co., Ltd. Patentee after: Shanghai microelectronics equipment (Group) Limited by Share Ltd Address before: 201203 Zhangjiang High Tech Park, Shanghai, Zhang Dong Road, No. 1525 Co-patentee before: Shanghai Micro And High Precision Mechine Engineering Co., Ltd. Patentee before: Shanghai Micro Electronics Equipment Co., Ltd. |
|
| CP01 | Change in the name or title of a patent holder |