CN100587605C - Aligning mark structure for aligning system of photolithography equipment - Google Patents
Aligning mark structure for aligning system of photolithography equipment Download PDFInfo
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- CN100587605C CN100587605C CN200810040234A CN200810040234A CN100587605C CN 100587605 C CN100587605 C CN 100587605C CN 200810040234 A CN200810040234 A CN 200810040234A CN 200810040234 A CN200810040234 A CN 200810040234A CN 100587605 C CN100587605 C CN 100587605C
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Abstract
An alignment mark structure for the alignment system of lithography equipment is disclosed. The alignment mark is a two-dimension alignment mark, which comprises at least six groups of rasters which are: a first raster, a second raster and a third raster of x axis, which are used for alignment in x-shaft direction, and a first raster, a second raster and a third raster of y axis, which are used for alignment in y-shaft direction; the respective first raster, third raster and second raster of the x axis and the y axis are all arranged in sequence along the alignment direction, and the rasters used for alignment in x-axis direction and y-axis direction are vertical to each other; rough central position of the alignment mark can be obtained according to the phase information of alignment signals of the first raster and the second raster along the x-axis direction and the y-axis direction; and the precision central position of the alignment mark can be obtained according to the phase information of the third raster signal and by combining the rough central position information of the alignment mark. The alignment mark structure of the invention reduces technical difficulty, avoids theerror resulted from coupling and the loss of light energy and improves accuracy.
Description
Technical field
The present invention is relevant with the lithographic equipment that integrated circuit or other microdevices are made the field, particularly a kind of alignment mark of alignment system.
Background technology
Lithographic equipment of the prior art is mainly used in the manufacturing of integrated circuit (IC) or other microdevices.By lithographic equipment, the multilayer mask with different mask patterns under accurate alignment case successively exposure image be coated with on the silicon chip of photoresist.Present lithographic equipment is divided into two classes substantially, one class is the stepping lithographic equipment, the mask pattern single exposure is imaged on an exposure area of silicon chip, silicon chip moves with respect to mask subsequently, next exposure area is moved to mask pattern and projection objective below, again mask pattern is exposed in another exposure area of silicon chip, repeat the picture that this process all exposure areas on silicon chip all have corresponding mask patterns.Another kind of is the step-scan lithographic equipment, and in said process, mask pattern is not the single exposure imaging, but the scanning mobile imaging by the projection light field.In the mask pattern imaging process, mask and silicon chip move with respect to optical projection system and projected light beam simultaneously, finish silicon wafer exposure.
Critical step is that mask is aimed at silicon chip in the lithographic equipment.After exposing on silicon chip, the ground floor mask pattern removes in the slave unit, after the PROCESS FOR TREATMENT that silicon chip is correlated with, carry out the exposure of second layer mask pattern, but for guarantee second layer mask pattern and subsequently the picture of mask pattern mask and silicon chip accurately need be aimed at respect to the accurate location of exposed mask pattern image on the silicon chip.Because the IC device of photoetching technique manufacturing needs multiexposure, multiple exposure to form multilayer circuit in silicon chip, for this reason, require to realize the accurate aligning of mask and silicon chip in the lithographic equipment.When characteristic dimension requires more hour, will become strict more to the requirement of alignment precision.
Prior art has two kinds of alignment scheme: a kind of is the TTL technique of alignment that sees through camera lens, alignment mark on the laser lighting mask images in the silicon chip plane by object lens, mobile silicon chip platform, make the reference marker scanning alignment mark imaging on the silicon chip platform, the light intensity of the imaging of sampling simultaneously, correct alignment position is promptly represented in the largest light intensity position of detector output, and this aligned position provides zero reference for the position measurement of the laser interferometer that is used for monitoring wafer platform position and moves; Another kind is an OA off-axis alignment technology, be positioned at the reference mark of datum plate on a plurality of alignment marks on the silicon chip platform and the silicon chip platform by the off-axis alignment systematic survey, realize that silicon chip is aimed at and the silicon chip platform is aimed at, reference marker is aimed at mask alignment mark on the silicon chip platform, realize mask registration, can obtain the position relation of mask and silicon chip thus, realize mask and silicon chip aligning.
At present, the most alignment so that adopts of main flow lithographic equipment is a grating alignment.Grating alignment is meant that illumination beam on the grating type alignment mark diffraction takes place, and diffraction light carries the full detail about alignment mark structure.The multilevel diffraction light scatters from the phase alignment grating with different angles, after filtering zero order light by spatial filter, gather ± 1 order diffraction light, the perhaps raising that requires along with CD, gather multi-level diffraction light (comprising senior) simultaneously at the reference surface interference imaging, utilize picture to scan at certain orientation with reference to grating, survey and signal Processing, determine the centering adjustment position through photodetector with corresponding.
A kind of situation of prior art is (referring to Chinese invention patent, publication number: CN1506768A, denomination of invention: the alignment system and the method that are used for etching system), the ATHENA off-axis alignment system of a kind of 4f system architecture that Holland ASML company is adopted, this alignment system adopts ruddiness, green glow two-source illumination at the Lights section; And adopt voussoir array or wedge group to realize the overlapping and coherent imaging of alignment mark multi-level diffraction light, and on image planes, imaging space is separated; The registration signal of ruddiness and green glow is separated by a polarization beam splitter prism; By surveying the alignment mark picture, obtain the registration signal of sinusoidal output through transmitted light intensity with reference to grating.
This alignment system is by surveying the aligned position error that (comprising diffraction light senior time), the multilevel diffraction light caused to reduce the alignment mark asymmetrical deformation of alignment mark.Concrete positive and negative level time overlapping, the coherent imaging of hot spot correspondence that adopts voussoir array or wedge group to realize the alignment mark multi-level diffraction light, the deviation of diffraction light light beams at different levels by voussoir array or wedge group makes alignment mark be used for the grating grating pictures at different levels that the x direction of principal axis aims at and is arranged in picture in image planes along the y direction of principal axis simultaneously; The grating grating pictures at different levels that are used for y direction of principal axis aligning are arranged in picture in image planes along the x direction of principal axis, different cycles grating picture scans a situation with reference to grating, the cross-interference issue of effective address signal simultaneously when having avoided alignment mark grating picture scanning at different levels correspondence with reference to grating.But when using the voussoir array, the face type and the angle of wedge coherence request of two voussoirs that the positive and negative same stages of birefringence is inferior are very high; And the requirement of the processing and manufacturing of wedge group, assembling and adjustment is also very high, and the specific implementation engineering difficulty of getting up is bigger, costs dearly.
The situation of another kind of prior art is (referring to Chinese invention patent, publication number: 200710044152.1, denomination of invention: a kind of alignment system that is used for lithographic equipment), this alignment system adopts has three periods phase grating of thickness combination, the first-order diffraction light that only utilizes these three cycles is as registration signal, obtain high alignment precision when can realize big capture range, only use the first-order diffraction light in each cycle, can obtain stronger signal intensity, improve system signal noise ratio, need not come separately senior diffraction components of multichannel by regulating devices such as wedges, simplify light path design and debugging difficulty, but in the two-dimensional alignment marking layout, mark structure is loose, need bigger illumination hot spot, this certainly will introduce more parasitic lights, has reduced signal to noise ratio (S/N ratio), on the other hand, in this invention, the x of the intermediate raster of two-dimensional alignment mark axially and the axial grating of y all adopted two sections gratings, need two sections be optically coupled in together by coupling mechanism, survey its light intensity, and two sections raster phases are difficult to overlap fully, this will inevitably introduce phase error, causes precision to reduce, in addition, the process of optically-coupled can not make full use of light intensity with off-energy.
Summary of the invention
The purpose of this invention is to provide a kind of compact and uncoupled alignment mark structure of arrangement that is used for the lithographic equipment alignment system, by the following technical solutions:
Described alignment mark is the two-dimensional alignment mark, at least comprise six groups of gratings: x axle first grating, x axle second grating and x axle the 3rd grating, being used for the x direction of principal axis aims at, described x axle first grating, x axle the 3rd grating and x axle second grating arrange successively along the x direction of principal axis, described x axle first grating and described x axle second grating are the large period grating, described x axle the 3rd grating is the minor cycle grating, described x axle the 3rd grating from one of them distance of described x axle first grating and described x axle second grating than distance to another, y axle first grating, y axle second grating and y axle the 3rd grating, being used for the y direction of principal axis aims at, described y axle first grating, y axle the 3rd grating and y axle second grating arrange successively along the y direction of principal axis, described y axle first grating and described y axle second grating are the large period grating, described y axle the 3rd grating is the minor cycle grating, described y axle the 3rd grating from one of them distance of described y axle first grating and described y axle second grating than distance to another, the grating of the grating of described x axle and described y axle is vertical mutually, described x axle the 3rd grating and and its mid point between the x axle large period grating far away, overlap at a distance of the mid point between the y axle large period grating far away with described y axle the 3rd grating with it.
Further, the x axle of described alignment mark and y axle first grating, second grating and the 3rd grating separately ± 1 order diffraction light by spatial filtering respectively coherent imaging be positioned on the reference grating of image planes.
Further, describedly comprise six groups of amplitude gratings with reference to grating, correspond respectively to x axle first grating, second grating and the 3rd grating ± 1 grade of grating picture and y axle first grating, second grating and the 3rd grating ± 1 grade of grating picture, the arrangement mode of six groups of gratings is identical with alignment mark.
Further, the picture of the x axle of described alignment mark and y axle first grating, second grating and the 3rd grating separately obtains x axle and the y axle first grating alignment signal, the second grid registration signal and the 3rd grating alignment signal separately respectively through changing with reference to the transmitted light intensity after the Grating Modulation.
Further, according to described x axle and the y axle first grating alignment signal and the phase information of the second grating alignment signal rough center that obtains alignment mark separately, according to the phase information of described x axle and y axle the 3rd light signal separately, and obtain the accurate center of alignment mark in conjunction with the rough center of alignment mark.
Further, the x axle of described alignment mark and the y axle first grating picture, the second grating picture and the 3rd grating picture separately overlaps with reference to the grating center with corresponding respectively when aligned position, be that phase place obtains coupling, be used for slightly catching more accurately aiming at and fine alignment, reduce alignment error.
The present invention has adopted the asymmetric arrangement of two-dimensional alignment mark, it is compact to make grating arrange, and the x of the intermediate raster of two-dimensional alignment mark is axial and y axially all adopts one section grating, arrange compact more, reduced the size of illumination hot spot, make the parasitic light of introducing tail off, the signal to noise ratio (S/N ratio) of signal and final alignment precision have been improved, the x of intermediate raster axially and y axially all adopt one section grating, do not need to consider the coupled problem of two sections light, reduced technical difficulty, and avoided loss, improved precision because of the sum of errors luminous energy of coupling generation.
Description of drawings
Fig. 1 is the used alignment system of lithographic equipment of the present invention and the total arrangement between the lithographic equipment, principle of work structural representation;
Fig. 2 is the used alignment system structural representation of embodiment of the present invention;
Fig. 3 is the used alignment system intermediate frequency spectrum of an embodiment of the present invention face filtering pore size distribution synoptic diagram;
Fig. 4 is the synoptic diagram of the silicon chip alignment mark first embodiment two-dimensional marker of the present invention;
Fig. 5 is the synoptic diagram of the silicon chip alignment mark first embodiment correspondence of the present invention with reference to grating;
Fig. 6 is the alignment system first embodiment two-dimensional alignment mark marking groove layout of the present invention;
Fig. 7 is that alignment mark first embodiment of the present invention scans through alignment system, the registration signal synoptic diagram after signal gain is handled;
Fig. 8 is the synoptic diagram of the silicon chip alignment mark second embodiment two-dimensional marker of the present invention;
Fig. 9 is the synoptic diagram of the silicon chip alignment mark second embodiment correspondence of the present invention with reference to grating;
Figure 10 is the alignment system second embodiment two-dimensional alignment mark marking groove layout of the present invention;
Figure 11 is that alignment system second embodiment of the present invention scans through alignment system, the registration signal synoptic diagram after signal gain is handled.
Embodiment
The invention is further described below in conjunction with accompanying drawing.
Please refer to Fig. 1, Fig. 1 shows the alignment system of the used lithographic equipment of the present invention and the total arrangement between the lithographic equipment, principle of work structural representation.The formation of lithographic equipment comprises: the illuminator 1 that is used to provide exposing light beam, be used to support the mask holder and the mask platform 3 of mask 2, the alignment mark RM that mask pattern is arranged on the mask 2 and have periodic structure, be used for the mask pattern on the mask 2 is projected to the projection optical system 4 of silicon chip 6, be used to support the silicon chip support and the silicon chip platform 7 of silicon chip 6, the datum plate 8 that is carved with reference mark FM is arranged on the silicon chip platform 7, the alignment mark of periodicity optical structure is arranged on the silicon chip 6; Be used for the off-axis alignment system 5 that mask and silicon chip are aimed at, the catoptron 10,16 and the laser interferometer 11,15 that are used for mask platform 3 and 7 position measurements of silicon chip platform, and by the mask platform 3 of master control system 12 controls and the servo-drive system 13 and the drive system 9,14 of silicon chip platform 7 displacements.
Wherein, illuminator 1 comprises that a light source, one make the lens combination of illumination homogenising, catoptron, a condenser (all not shown among the figure).As a light source cell, adopt KrF excimer laser (wavelength 248nm), ArF excimer laser (wavelength 193nm), F2 laser instrument (wavelength 157nm), Kr2 laser instrument (wavelength 146nm), Ar2 laser instrument (wavelength 126nm) or use ultrahigh pressure mercury lamp (g-line, i-line) etc.The exposing light beam IL of illuminator 1 uniform irradiation is radiated on the mask 2, includes the mark RM of mask pattern and periodic structure on the mask 2, is used for mask registration.Mask platform 3 can move in perpendicular to the X-axis-Y-axis plane of illuminator optical axis (overlapping with the optical axis AX axle of projection objective) through drive system 14, and moves with specific sweep velocity in predetermined direction of scanning (being parallel to the X-axis direction of principal axis).The position of mask platform 3 in plane of motion recorded by Doppler's two-frequency laser interferometer 15 precisions by the catoptron 16 that is positioned on the mask platform 3.The positional information of mask platform 3 sends to master control system 12 by laser interferometer 15 through servo-drive system 13, and master control system 12 drives mask platform 3 according to the positional information of mask platform 3 by drive system 14.
Projection optical system 4 (projection objective) is positioned at mask platform shown in Figure 13 belows, and its optical axis AX axle is parallel to Z-direction.Since adopt two core structures far away and have predetermined scale down as 1/5 or 1/4 refraction type or refractive and reflective optical system as projection optical system, so when the mask pattern on the exposing light beam illuminating mask 2 of illuminator 1 emission, the image that the circuit mask pattern becomes to dwindle on the silicon chip 6 that is coated with photoresist through projection optical system.
Silicon chip 6 is provided with the alignment mark of periodic structure, and the datum plate 8 that comprises reference mark FM is arranged on the silicon chip platform 7, and alignment system 5 realizes that by silicon chip alignment mark and reference mark FM silicon chip 6 is aimed at and silicon chip platform 7 is aimed at respectively.In addition, coaxial alignment unit (not shown) is aimed at the reference mark FM of datum plate 8 on the silicon chip platform with mask alignment mark RM, realizes mask registration.The alignment information of alignment system 5 is transferred to master control system 12 together in conjunction with the alignment information of coaxial alignment unit, and after data processing, drive system 9 drives silicon chip platform 7 and moves the aligning of realizing mask and silicon chip 6.
Fig. 2 is the alignment system structural representation of first embodiment of the invention, and this alignment system mainly is made up of light source module, lighting module, image-forming module, detecting module, signal Processing and locating module (not illustrating among the figure) etc.Light source module mainly comprises light source, shutter, optoisolator and the radio frequency modulator (not illustrating among the figure) that two wavelength are provided.Lighting module comprises Transmission Fibers and lamp optical system.Image-forming module mainly comprises: the object lens of large-numerical aperture (211), beam splitter 214, bi-directional beam divider 218, spatial filter (219,224) and lens combination (211,220,225).Detecting module comprises with reference to grating (221,226), Transmission Fibers (216,222,227), CCD camera 217 and photodetector (223,228).Signal Processing and locating module mainly comprise photosignal conversion and amplification, analog to digital conversion and digital signal processing circuit etc.
The alignment system principle is: the light beam 201 of light source module output (comprises two kinds of choosing wavelengths, also can use simultaneously) enter light beam bundling device 202, be transferred to the polarizer 204 via monofilm polarization maintaining optical fibre 203, lens 205, illuminating aperture diaphragm 206 and lens 207, reflecting prism 208 on dull and stereotyped 209 impinges perpendicularly on the object lens 211 that achromatic λ/4 wave plates 210 enter large-numerical aperture (4F lens preceding group) then, light beam is assembled through the object lens 211 of large-numerical aperture and is shone on the silicon chip mark 212 concurrent gaining interest and penetrate, 212 at different levels diffraction lights of mark return along former road and enter beam splitter 214 through dull and stereotyped 209, beam splitter 214 reflexes to the CCD light path through lens 215 with the sub-fraction diffraction light through plated film reflecting surface 213, Transmission Fibers 216, image in and be used for observing the picture situation that is marked as on the CCD217, another part diffraction light along the light path transmissive by 218 two kinds of wavelength light beams of Amici prism separately, enter different light paths respectively, through corresponding spatial filter (219,224) (what the present invention needed is respectively each grating ± 1 order diffraction light for the diffraction lighting level that select to need time, and scioptics system (220,225, back group of 4F lens) the corresponding order of diffraction time interference of light picture is become at reference grating (221,226) on, the mark order of diffraction time interference image is via reference grating (221,226) signal that obtains of scanning is through Transmission Fibers (222,227) be transported to photodetector (223,228) carry out acquisition of signal.
Fig. 3 is the structural representation of the used spatial filter of the present invention (219,224), being divided into vertical and horizontal both direction arranges, be respectively applied for the alignment mark ± 1 order diffraction light filtering of both direction, differ very little owing to be used for the cycle of two large period gratings that the aligning scope catches in the alignment mark, its ± that 1 order diffraction light beam is gone up distance at 4F system spectrum face (spatial filter position) is very near, so also can allow two large period gratings ± 1 order diffraction light beam passes through in same filtering hole.
The principal character of this alignment system is, first grating, second grating and the 3rd grating by surveying alignment mark in image planes ± 1 order diffraction light coherent imaging is after change with reference to the light intensity of Grating Modulation, obtained the center of alignment mark by the phase information of optical signal transmissive.Wherein obtain the coarse position information of alignment mark, obtain the precise position information of alignment mark by the registration signal of the 3rd grating of alignment mark by the registration signal of first grating of alignment mark and second grating.
Fig. 4 is the structural representation of silicon chip two-dimensional alignment mark among Fig. 1, is to realize that both direction scans the mark of aligning simultaneously, and mark is made up of six groups of gratings altogether.Alignment mark is that dutycycle is 1: 1 a phase grating structure.
The alignment mark that is used for x direction of principal axis aligning comprises the grating of three groups of different cycles: first grating 401, second grating 402 and the 3rd grating 403, wherein the grating cycle of first grating 401 is P1, the grating cycle of second grating 402 is P2, the grating cycle of the 3rd grating 403 is P3, axial first grating 401 of described x and the 3rd grating 403 are the large period grating, axial second grating 402 of described x is the minor cycle grating, axial first grating 401 of described x, the 3rd grating 403 and second grating 402 arrange successively along aligning direction, the alignment mark grating that is used for x direction of principal axis aligning is positioned at the axial marking groove of x, axial the 3rd grating 403 of described x is in the position near axial second grating 402 of described x, and both position relations need guarantee that signal does not have and crosstalk.
To being used for two groups of large period gratings: first grating 401 and second grating 402, select the different grating cycles can improve the capture range of alignment mark, capture range is expressed as P1 * P2/[2 (P1-P2)].Grating cycle P1, P2 are more or less the same, and (1 ± r%) P1, wherein the r value is between 5 to 15 generally to get P2=.For example, 401 cycles of first grating are 13um, and 402 cycles of second grating are 12um, and then capture range is 78um.Cycle P3＜the P1 of the 3rd grating 403, and P3＜P2 are used for fine alignment.For example, the cycle of the 3rd grating 403 can be 2 μ m.Cycle value between three groups of gratings will be mated mutually, promptly require filtering hole on filtering face be merely able to allow grating separately ± 1 order diffraction light transmission, other level time diffraction lights are owing to being blocked outside the filtering hole.
Equally, the alignment mark that is used for y direction of principal axis aligning comprises first grating 405, second grating 404 and the 3rd grating 406, axial the 3rd grating 406 of described y is in the position near axial second grating 404 of described y, both position relation need guarantee that signal does not have and crosstalk that three groups of grating cycles are identical with three groups of grating cycles of x direction of principal axis alignment mark.Two-dimensional alignment be marked in the marking groove (Scribe Lane) the position as shown in Figure 6.
Being used for the x direction of principal axis aims at vertical mutually with the grating that is used for y direction of principal axis aligning, the described alignment mark that is used for x direction of principal axis aligning, the alignment mark intersection point of aiming at the described y of being used for direction of principal axis should be the mid point of x direction of principal axis and axial first grating of y and the 3rd grating, obtain the rough center of alignment mark according to the phase information of described x direction of principal axis and the axial first grating alignment signal of y and the second grating alignment signal, according to the phase information of the 3rd grating alignment signal, and obtain the accurate center of alignment mark in conjunction with the rough center of alignment mark.
This alignment system alignment mark three groups of grating cycles can be according to the position of diffracted beam on frequency surface separately, carry out suitable cycle coupling, so that carry out spatial filtering, can produce registration signal with strong Technological adaptability, high sensitivity and high s/n ratio, the alignment system repeatability precision can reach 3-5nm, satisfy fully live width 90nm and 90nm following to alignment request.
As shown in Figure 5, comprise six groups of amplitude gratings with reference to grating: grating 501, grating 502, grating 503, grating 504, grating 505 and grating 506, correspond respectively to first grating 401 of x direction of principal axis alignment mark, the 402 and the 3rd grating 403 of second grating, the diffraction ± 1 grade grating picture of first grating 404, second grating 405 and the 3rd grating 406 of y direction of principal axis alignment mark.Be respectively arranged with the Transmission Fibers bundle behind six groups of amplitude gratings, comprise optical fiber 507,508,509,510,511 and 512, to be transferred to the corresponding photo detector array with reference to the transmitted light of respectively organizing grating of grating, for making the tag arrangement compactness, and make its detection optical fiber that enough space arrangements be arranged, require optical fiber 511 and 512 respectively with optical fiber 507,509 is tangent, thereby determine the position relation between each mark grating, in two-dimensional alignment mark scannng process, obtain the axial registration signal of alignment mark x axle and y, as shown in Figure 7, comprise the first grating alignment signal P1 after the process gain process, the second grating alignment signal P2 and the 3rd grating alignment signal P3.
Fig. 6 has provided the laying situation of two-dimensional alignment mark structure in the silicon chip marking groove, between the exposure field in the orthogonal marking groove, is laid with the two-dimensional alignment mark on silicon chip, and grating P1, P2, P3 are used for the x direction of principal axis and aim at, and are positioned at the axial marking groove of x.Grating P4, P5, P6 are used for the y direction of principal axis and aim at, and are positioned at the axial marking groove of y.For preventing the signal cross-talk from the IC product structure, the alignment mark grating should be positioned at the zone line of marking groove, and width for example is 72 μ m or 36 μ m less than the marking groove width, and the marking groove width then is about 82 μ m.
Fig. 7 is desirable three cycle registration signal.
Fig. 8-11 is for being another embodiment that adopts the lithographic equipment of above-mentioned alignment system, Fig. 8 is the synoptic diagram of the silicon chip alignment mark second embodiment two-dimensional marker of the present invention, described x axle the 3rd grating 403 is in the position near described x axle first grating 401, described y axle the 3rd grating 406 is in the position near described y axle first grating 404, Fig. 9 is the synoptic diagram of the silicon chip alignment mark second embodiment correspondence of the present invention with reference to grating, Figure 10 is the alignment system second embodiment two-dimensional alignment mark marking groove layout of the present invention, Figure 11 is that alignment system second embodiment of the present invention is through alignment system scanning, registration signal synoptic diagram after signal gain is handled, principle is all identical with first embodiment.
This two-dimensional alignment mark of the present invention takes up room little, this makes illumination hot spot is corresponding and reduces, the light source utilization factor improves, and the x of the intermediate raster of two-dimensional alignment mark is axial and y axially all adopts one section grating, do not need to consider the coupled problem of two sections light, reduced technical difficulty, and avoided loss, improved precision because of the sum of errors luminous energy of coupling generation.
Though the present invention discloses as above with embodiment, so it is not in order to limit the present invention.The persond having ordinary knowledge in the technical field of the present invention, without departing from the spirit and scope of the present invention, when being used for a variety of modifications and variations.Therefore, protection scope of the present invention is as the criterion when looking claims person of defining.
Claims (7)
1, a kind of alignment mark structure that is used for the lithographic equipment alignment system is characterized in that:
Described alignment mark is two-dimentional three cycle alignment marks, comprises six groups of gratings:
X axle first grating, x axle second grating and x axle the 3rd grating, being used for the x direction of principal axis aims at, described x axle first grating, x axle the 3rd grating and x axle second grating arrange successively along the x direction of principal axis, described x axle first grating and described x axle second grating are the large period grating, described x axle the 3rd grating is the minor cycle grating, described x axle the 3rd grating from one of them distance of described x axle first grating and described x axle second grating than distance to another;
Y axle first grating, y axle second grating and y axle the 3rd grating, being used for the y direction of principal axis aims at, described y axle first grating, y axle the 3rd grating and y axle second grating arrange successively along the y direction of principal axis, described y axle first grating and described y axle second grating are the large period grating, described y axle the 3rd grating is the minor cycle grating, described y axle the 3rd grating from one of them distance of described y axle first grating and described y axle second grating than distance to another;
The grating of the grating of described x axle and described y axle is vertical mutually, described x axle the 3rd grating and and its mid point between the x axle large period grating far away, overlap at a distance of the mid point between the y axle large period grating far away with described y axle the 3rd grating with it.
2, the alignment mark structure that is used for the lithographic equipment alignment system as claimed in claim 1, it is characterized in that, the x axle of described alignment mark and y axle first grating, second grating and the 3rd grating separately ± 1 order diffraction light by spatial filtering respectively coherent imaging be positioned on the reference grating of image planes.
3, the alignment mark structure that is used for the lithographic equipment alignment system as claimed in claim 2, it is characterized in that, describedly comprise six groups of amplitude gratings with reference to grating, correspond respectively to x axle first grating, second grating and the 3rd grating ± 1 grade of grating picture and y axle first grating, second grating and the 3rd grating ± 1 grade of grating picture, described arrangement mode with reference to grating is identical with alignment mark.
4, the alignment mark structure that is used for the lithographic equipment alignment system as claimed in claim 3 is characterized in that, and is described with reference to being respectively arranged with the Transmission Fibers bundle behind the grating.
5, the alignment mark structure that is used for the lithographic equipment alignment system as claimed in claim 1, it is characterized in that, the picture of the x axle of described alignment mark and y axle first grating, second grating and the 3rd grating separately obtains x axle and the y axle first grating alignment signal, the second grating alignment signal and the 3rd grating alignment signal separately respectively through changing with reference to the transmitted light intensity after the Grating Modulation.
6, the alignment mark structure that is used for the lithographic equipment alignment system as claimed in claim 5, it is characterized in that: according to described x axle and the y axle first grating alignment signal and the phase information of the second grating alignment signal rough center that obtains alignment mark separately, according to the phase information of described x axle and y axle the 3rd grating alignment signal separately, and obtain the accurate center of alignment mark in conjunction with the rough center of alignment mark.
7, the alignment mark structure that is used for the lithographic equipment alignment system as claimed in claim 1, it is characterized in that, the x axle of described alignment mark and the y axle first grating picture, the second grating picture and the 3rd grating picture separately overlaps with reference to the grating center with corresponding respectively when aligned position, be that phase place obtains coupling, be used for slightly catching and aim at and fine alignment, reduce alignment error.
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