CN102314091B - Lithography machine capable of adjusting size of lighting spot of alignment system - Google Patents
Lithography machine capable of adjusting size of lighting spot of alignment system Download PDFInfo
- Publication number
- CN102314091B CN102314091B CN 201010217847 CN201010217847A CN102314091B CN 102314091 B CN102314091 B CN 102314091B CN 201010217847 CN201010217847 CN 201010217847 CN 201010217847 A CN201010217847 A CN 201010217847A CN 102314091 B CN102314091 B CN 102314091B
- Authority
- CN
- China
- Prior art keywords
- mask
- silicon chip
- alignment
- light
- light beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Abstract
The invention provides a lithography machine capable of adjusting the size of a lighting spot of an alignment system. A lighting system in an off-axis alignment system is provided with a light beam adjusting device capable of adjusting the size of the lighting spot. The size and the shape of the spot of light output by the lighting system can be adjusted by the light beam adjusting device. The size of the spot can be adjusted as required when different alignment marks are illuminated by the lighting system of the alignment system of the lithography machine.
Description
Technical field
The present invention relates to a kind of lithographic equipment, particularly a kind of litho machine of regulating alignment system illumination light spot size.
Background technology
Lithographic equipment of the prior art is mainly used in the manufacturing of integrated circuit (IC) or other microdevice.By lithographic equipment, the multilayer mask with different mask patterns is imaged on the wafer that is coated with photoresist under accurately aiming at successively, for example semiconductor wafer or LCD plate.Lithographic equipment is divided into two classes substantially, one class is the stepping lithographic equipment, the mask pattern single exposure is imaged on an exposure area of wafer, wafer moves with respect to mask subsequently, next exposure area is moved to mask pattern and projection objective below, again mask pattern is exposed in another exposure area of wafer, repeat the picture that this process all exposure areas on wafer all have mask pattern.Another kind of is the step-scan lithographic equipment, and in said process, mask pattern is not the single exposure imaging, but the scanning mobile imaging by the projection light field.In the mask pattern imaging process, mask and wafer move with respect to optical projection system and projected light beam simultaneously.
Critical step is with mask and wafer aligned in the lithographic equipment.The ground floor mask pattern is removed from device in wafer exposure back, after the PROCESS FOR TREATMENT that wafer is correlated with, carry out the exposure of second layer mask pattern, but for guarantee second layer mask pattern and subsequently the picture of mask pattern mask and wafer accurately need be aimed at respect to the accurate location of exposed mask pattern image on the wafer.IC device by the photoetching technique manufacturing needs multiexposure, multiple exposure to form multilayer circuit in wafer, for this reason, requires the configuration alignment system in the lithographic equipment, realizes the accurate aligning of mask and wafer.When characteristic dimension requires more hour, the requirement of alignment precision and consequent requirement to alignment precision are become stricter.
The alignment system of lithographic equipment, its major function are to realize mask-wafer aligned before the alignment exposure, namely measure the coordinate (X of wafer in coordinate system of machine
W, Y
W, Φ
WZ), and the coordinate (X of mask in coordinate system of machine
R, Y
R, Φ
RZ), and calculate mask with respect to the position of wafer, to satisfy the requirement of alignment precision.Prior art has two kinds of alignment scheme.A kind of is the TTL technique of alignment that sees through camera lens, the alignment mark of the periodic phase optical grating construction that laser lighting arranges at wafer, diffraction light or scattered light by the collected wafer alignment marks of the projection objective of lithographic equipment shine on mask alignment mark, and this alignment mark can be amplitude or phase grating.Behind the mask mark detector is set, when scanning wafer under projection objective, surveys the light intensity that sees through the mask mark, the maximal value of detector output is represented correct alignment position.This aligned position provides zero reference for the position measurement of the laser interferometer that is used for monitoring wafer platform position and moves.Another kind is OA off-axis alignment technology, is positioned at the reference mark of datum plate on a plurality of alignment marks on the wafer and the wafer station by the off-axis alignment systematic survey, realizes that wafer aligned and wafer station aim at; The reference mark of datum plate is aimed at mask alignment mark on the wafer station, realizes mask registration; The position relation of mask and wafer be can obtain thus, mask and wafer aligned realized.
At present, the most alignment so that adopts of lithographic equipment is grating alignment.Grating alignment refers to that even illumination beam at the grating alignment mark diffraction takes place, and the emergent light behind the diffraction carries the full detail about alignment mark structure.Senior diffraction light scatters from the phase alignment grating with wide-angle, after filtering zero order light by spatial filter, gather diffraction light ± 1 order diffraction light, the perhaps raising that requires along with CD, gather multi-level diffraction light (comprising senior) simultaneously in picture plane interference imaging, handle through photodetector and signal, determine the centering adjustment position.
Chinese invention patent CN03164859.2 discloses a kind of alignment system for etching system and method.The off-axis alignment system of a kind of 4f system architecture that Holland ASML company adopts, this alignment system adopts ruddiness, green glow two-source illumination at the Lights section; The spot size that shines on the mark is fixed, and employing voussoir array or wedge group realize the separation of multi-level diffraction light, at image planes difference coherent imaging; The registration signal of ruddiness and green glow is separated by a polarization beam splitter prism; See through the transmitted light intensity of the reference grating in corresponding cycle behind the detection alignment mark multilevel diffraction light coherent imaging, in the alignment mark scanning process, obtain the registration signal of sinusoidal output, obtained the center of alignment mark by the phase information of the signal of different frequency.
Such alignment system uses fixing spot size to shine on the grating, for XY four-quadrant mark, require spot size will cover whole mark, this just needs bigger hot spot, then only need less hot spot to get final product for the X in the marking groove, Y mark, use in this case than large spot and can introduce bigger parasitic light, reduce signal to noise ratio (S/N ratio), influence alignment precision.
Summary of the invention
The object of the present invention is to provide a kind of litho machine of regulating alignment system illumination light spot size, make when the different alignment mark of irradiation, can regulate spot size as required.
In order to achieve the above object, the invention provides a kind of litho machine of regulating alignment system illumination light spot size, comprising: illuminator provides exposing light beam; Mask holder and mask platform are used for the supporting mask; Mask, the alignment mark that has mask pattern and have periodic structure; Projection optical system is used for the mask pattern on the mask is projected to silicon chip; Silicon chip, the alignment mark with periodicity optical structure; Silicon chip support and silicon chip platform are used for the supporting silicon chip, and the datum plate of the reference mark of being carved with is arranged on the silicon chip platform; Catoptron and laser interferometer are used for the measurement of mask platform and silicon chip platform position; Servo-drive system and drive system are by the displacement of master control system control mask platform and silicon chip platform; And the off-axis alignment system, be used for mask and silicon pad alignment; Wherein, the illuminator in the off-axis alignment system has the light beam modulating device that can regulate the illumination light spot size.
Wherein, the illuminator in the described off-axis alignment system comprises: LASER Light Source provides the aligning lighting source; Fiber coupler, the optically-coupled that laser instrument is sent enters optical fiber; Single-mode polarization maintaining fiber; Optical fiber collimator becomes parallel beam with pointolite; And the light beam modulating device, spot size and the shape of regulating optical fiber collimator output light.
Wherein, described light beam modulating device is two groups of lens combination before and after the described adjustable focus telescopic system of adjustable focus telescopic system comprises, preceding group of lens combination comprises a plus lens, and back group lens combination comprises three by the eyeglass of Electric Machine Control.
Wherein, described light beam modulating device is spatial light modulator.
A kind of aligning means of illumination, comprise: provide an illuminating bundle by a LASER Light Source, described illuminating bundle process beam collimation forms parallel beam behind the unit, described parallel beam is through the output of light beam modulating device, and the output facula of wherein said light beam modulating device is adjusted size and the shape of hot spot according to the demand of lighting object.
Wherein, described beam collimation unit comprises fiber coupler, and the optically-coupled that laser instrument is sent enters optical fiber; Single-mode polarization maintaining fiber; Optical fiber collimator becomes parallel beam with pointolite.
Wherein, described light beam modulating device is two groups of lens combination before and after the described adjustable focus telescopic system of adjustable focus telescopic system comprises, preceding group of lens combination comprises a plus lens, and back group lens combination comprises three by the eyeglass of Electric Machine Control.
Wherein, described light beam modulating device is spatial light modulator.
Description of drawings
By the embodiment of the invention and detailed description with the accompanying drawing, can further understand purpose of the present invention, specific structural features and advantage.Wherein:
Fig. 1 is lithographic equipment one-piece construction synoptic diagram in the prior art;
Fig. 2 is alignment system structural representation in the prior art;
Fig. 3 is that the present invention aims at the illuminator first example structure synoptic diagram;
Fig. 4 is the adjustable focus telescopic system structural representation that the present invention aims at illuminator first embodiment;
Fig. 5 (a) and (b), (c) are that the laser facula of prior art is at the three cycles mark scannng synoptic diagram of XY, X, Y-direction;
Fig. 6 (a) and (b), (c) are to use the present invention can regulate the three cycles mark scannng synoptic diagram of XY, X after the off-axis alignment illuminator of spot size, Y-direction;
Fig. 7 is that the present invention aims at the illuminator second example structure synoptic diagram;
Fig. 8 is a plurality of independent addressable pixel synoptic diagram of spatial light modulator;
Fig. 9 is that spatial light modulator is by computer control pixel synoptic diagram;
Figure 10 (a) and (b), (c) are at the mark scannng synoptic diagram of XY, X, Y-direction after the shaping of second embodiment of the invention laser facula.
Embodiment
Below, describe in detail according to a preferred embodiment of the invention by reference to the accompanying drawings.
Figure 1 shows that the alignment system of lithographic equipment in the prior art and the total arrangement between the lithographic equipment, principle of work structural representation.The formation of lithographic equipment comprises: the illuminator 1 that is used for providing exposing light beam; The mask holder and the mask platform 3 that are used for supporting mask 2, the alignment mark RM that mask pattern is arranged on the mask 2 and have periodic structure; Be used for the mask pattern on the mask 2 is projected to the projection optical system 4 of silicon chip 6; Be used for silicon chip support and the silicon chip platform 7 of supporting silicon chip 6, the datum plate 8 that is carved with reference mark FM is arranged on the silicon chip platform 7, the alignment mark of periodicity optical structure is arranged on the silicon chip 6; Be used for the off-axis alignment system 5 that mask and silicon chip are aimed at; The catoptron 10,16 and laser interferometer 11,15 that is used for mask platform 3 and 7 position measurements of silicon chip platform, and by servo-drive system 13 and the drive system 9,14 of master control system 12 control mask platform 3 and 7 displacements of silicon chip platform.
Wherein, illuminator 1 comprises that a light source, one make the lens combination of illumination homogenising, catoptron, a condenser (all not shown among the figure).As a light source cell, adopt KrF excimer laser (wavelength 248nm), ArF excimer laser (wavelength 193nm), F2 laser instrument (wavelength 157nm), Kr2 laser instrument (wavelength 146nm), Ar2 laser instrument (wavelength 126nm) or use ultrahigh pressure mercury lamp (g-line, i-line) etc.The exposing light beam IL of illuminator 1 uniform irradiation is radiated on the mask 2, includes the mark RM of mask pattern and periodic structure on the mask 2, is used for mask registration.Mask platform 3 can be mobile in perpendicular to the X-Y plane of illuminator optical axis (overlapping with the optical axis AX of projection objective) through drive system 14, and move with specific sweep velocity in predetermined direction of scanning (being parallel to X-direction).The position of mask platform 3 in plane of motion recorded by Doppler's two-frequency laser interferometer 15 precisions by the catoptron 16 that is positioned on the mask platform 3.The positional information of mask platform 3 sends to master control system 12 by laser interferometer 15 through servo-drive system 13, and master control system 12 drives mask platform 3 according to the positional information of mask platform 3 by drive system 14.
Projection optical system 4 (projection objective) is positioned at mask platform shown in Figure 13 belows, and its optical axis AX is parallel to Z-direction.Since adopt two core structures far away and have predetermined scale down as 1/5 or 1/4 refraction type or refractive and reflective optical system as projection optical system, so when the mask pattern on the exposing light beam illuminating mask 2 of illuminator 1 emission, the image that the circuit mask pattern dwindles 6 one-tenth of the silicon chips that is coated with photoresist through projection optical system.
Silicon chip 6 is provided with the alignment mark of periodic structure, and the datum plate 8 that comprises reference mark FM is arranged on the silicon chip platform 7, and alignment system 5 realizes that by silicon chip alignment mark and reference mark FM silicon chip 6 is aimed at and silicon chip platform 7 is aimed at respectively.In addition, coaxial alignment unit (not shown) is aimed at the reference mark FM of datum plate 8 on the silicon chip platform with mask alignment mark RM, realizes mask registration.The alignment information of alignment system 5 is transferred to master control system 12 together in conjunction with the alignment information of coaxial alignment unit, and after data were handled, drive system 9 drove silicon chip platform 7 and moves the aligning of realizing mask and silicon chip 6.
Fig. 2 is alignment system structural principle synoptic diagram in the prior art.Alignment system mainly is made up of light source module, lighting module, image-forming module, detecting module, signal processing and locating module (not illustrating among the figure) etc.Light source module mainly comprises light source, shutter, optoisolator and the radio frequency modulator (not illustrating among the figure) that two wavelength are provided.Lighting module comprises Transmission Fibers and lamp optical system.Image-forming module mainly comprises: the object lens 211 of large-numerical aperture, beam splitter 214, bi-directional beam divider 218, λ 2 spatial filters 219, λ 2 lens combinations 220 and λ 1 spatial filter 224, λ 1 lens combination 225.Detecting module comprises CCD Transmission Fibers 216, CCD camera 217, λ 2 reference markers 321, λ 2 Transmission Fibers 222, λ 2 photodetectors 223, λ 1 reference marker 226, λ 2 Transmission Fibers 227 and λ 2 photodetectors 228.Signal is handled and locating module mainly comprises photosignal conversion and amplification, analog to digital conversion and digital signal processing circuit etc.
The alignment system principle is: the alignment 201 of light source module output (comprises two kinds of choosing wavelengths, also can use simultaneously) enter light beam bundling device 202, be transferred to the polarizer 204 via monofilm polarization maintaining optical fibre 203, lens 205, illuminating aperture diaphragm 206 and lens 207, reflecting prism 208 on dull and stereotyped 209 impinges perpendicularly on the object lens 211 that achromatic λ/4 wave plates 210 enter large-numerical aperture (4F lens preceding group) then, light beam is assembled through the object lens 211 of large-numerical aperture and is shone on the silicon chip alignment mark 212 concurrent gaining interest and penetrate, 212 at different levels diffraction lights of alignment mark return along former road and enter beam splitter 214 through dull and stereotyped 209, beam splitter 214 reflexes to the CCD light path through CCD lens 215 with the sub-fraction diffraction light through plated film reflecting surface 213, CCD Transmission Fibers 216, image in and be used for observing the picture situation that is marked as on the CCD 217, another part diffraction light along the light path transmissive by 218 two kinds of wavelength light beams of Amici prism separately, enter different light paths respectively, through corresponding λ 2 spatial filters 219, λ 1 spatial filter 224, (what the present invention needed is respectively each grating ± 1 order diffraction light for the diffraction lighting level that select to need time, and by λ 2 lens combinations 220, λ 1 lens combination 225, (4F lens back group) become the corresponding order of diffraction time interference of light picture at λ 2 reference markers 221, on λ 1 reference marker 226, in the work stage scanning process, the alignment mark order of diffraction time interference image scanning λ 2 reference markers 221, λ 1 reference marker 226, through λ 2 Transmission Fibers 222, λ 1 Transmission Fibers 227 is surveyed the light signal that reference marker sees through, and is obtained the center of alignment mark by the phase information of light signal.
Fig. 3 is that the present invention aims at the illuminator first example structure synoptic diagram.301 is LASER Light Source, and the aligning lighting source is provided.302 illuminating bundles that send for LASER Light Source.303 is fiber coupler, and the light beam coupling that laser instrument is sent enters optical fiber.304 is single-mode polarization maintaining fiber.305 is optical fiber collimator, and pointolite is become parallel beam.Fiber coupler 303, single-mode polarization maintaining fiber 304 and the optical fiber collimator 305 common beam collimation unit of forming.Described beam collimation unit can be made up of modes such as quartz pushrod or fly lens or collimation lenses.306 is the adjustable focus telescopic system, this telescopic system is made up of two lens combination, and each lens combination is made up of some lens, by the motor on one of them lens combination, adjust the position of each lens in this lens combination, thereby change the spot size of this telescopic system output light.307 is alignment mark.
Fig. 4 is the structural representation of adjustable focus telescopic system.Wherein the parallel beam 401 by the outgoing of optical fiber collimator 305 (not shown on the figure) institute passes through lens combination 402, be refracted as converging beam 403, converge at 404 points, become parallel beam 409 through lens combination 405 again, wherein the motor on the scioptics group moves 406,407,408 3 lens, make the focus of lens combination be positioned at 404 all the time, and the distance between lens combination and 404 changes, this changes with regard to the spot size that makes parallel beam 409 form, thereby reaches the purpose of regulating spot size.
Fig. 5 (a) and (b), (c) are that the laser facula of prior art is at the three cycles mark scannng synoptic diagram of XY, X, Y-direction.
Fig. 6 (a) and (b), (c) are the mark scannng synoptic diagram of XY, X behind the use first embodiment of the invention aligning illuminator adjusting aligning illumination light spot size, Y-direction.From the contrast of Fig. 5 and Fig. 4 as can be seen, the present invention is in scanning XY mark, use bigger hot spot, and in scanning X, Y-direction mark, by the motor on lens combination, adjust the position of each lens, reduce spot size, most of energy all is radiated on the mark, has improved capacity usage ratio greatly.And the illumination of the aligning among Fig. 4 hot spot, when scanning X, Y-direction mark, energy exposure is not utilized beyond mark greatly, has also introduced a lot of parasitic lights simultaneously, has reduced alignment precision.
Fig. 7 is the structural representation that the present invention aims at illuminator second embodiment.701 is LASER Light Source, and the aligning lighting source is provided.702 illuminating bundles that send for LASER Light Source.703 is fiber coupler, is used for the optically-coupled that laser instrument sends is entered optical fiber.704 is single-mode polarization maintaining fiber.705 is optical fiber collimator, and pointolite is become parallel beam.706 is spatial light modulator (Spatial Light Modulator is called for short SLM), adjusts size, the shape of output light as required.707 is alignment mark.
Spatial light modulator, it is little to have quality, and characteristics such as low in energy consumption, no mechanical inertia are widely used in field such as modulation and Modulation and Amplitude Modulation before imaging demonstration, light beam beam splitting, laser beam reshaping, the coherent wave at present.The electrical addressing LCD space light modulator is utilized external voltage to change liquid crystal molecule and is pointed to the birefringence that reaches the control liquid crystal, thereby realizes the modulating action to light wave.The characteristic feature of SLM is that it comprises a plurality of independent addressable pixel, and each pixel is made of single discrete component, can be used for modulating amplitude and the phase place of the light wave of incident on it, as shown in Figure 8.Because SLM can utilize addressing voltage to control easily, this makes SLM become a kind of light wave carry out programmable controller spare, can make things convenient in real time and use as the light source wave filter.
As shown in Figure 9, computing machine will be optimized the control module that the modulation of source information of calculating gained is loaded into SLM, and this control module is responsible for amplitude information is converted into corresponding voltage, and addressing be added to corresponding each pixel S of SLM (x, y) on.
Figure 10 (a) and (b), (c) be in the second embodiment of the invention after the laser facula shaping at the mark scannng synoptic diagram of XY, X, Y-direction.From the contrast of Figure 10 and Fig. 5 as can be seen, the present invention when scanning XY mark, programming Control SLM, it sees through hot spot is the cruciform hot spot.And in scanning X, Y-direction mark, programming Control SLM, it sees through hot spot is rectangular light spot, will reduce the light that shines on other figure like this, has reduced parasitic light, has improved alignment precision.And the illumination of the aligning among Fig. 5 hot spot, the figure by can covering is introduced more parasitic light, influences alignment precision.
Described in this instructions is several preferred embodiment of the present invention, and above embodiment is only in order to illustrate technical scheme of the present invention but not limitation of the present invention.All those skilled in the art all should be within the scope of the present invention under this invention's idea by the available technical scheme of logical analysis, reasoning, or a limited experiment.
Claims (8)
1. the litho machine that can regulate alignment system illumination light spot size, comprising: illuminator provides exposing light beam; Mask holder and mask platform are used for the supporting mask; Mask, the alignment mark that has mask pattern and have periodic structure; Projection optical system is used for the mask pattern on the mask is projected to silicon chip; Silicon chip, the alignment mark with periodicity optical structure; Silicon chip support and silicon chip platform are used for the supporting silicon chip, and the datum plate of the reference mark of being carved with is arranged on the silicon chip platform; Catoptron and laser interferometer are used for the measurement of mask platform and silicon chip platform position; Servo-drive system and drive system are by the displacement of master control system control mask platform and silicon chip platform; And the off-axis alignment system, be used for mask and silicon pad alignment;
It is characterized in that the illuminator in the off-axis alignment system has the light beam modulating device that can regulate the illumination light spot size.
2. litho machine as claimed in claim 1 is characterized in that, the illuminator in the described off-axis alignment system comprises: LASER Light Source provides the aligning lighting source; Fiber coupler, the optically-coupled that laser instrument is sent enters optical fiber; Single-mode polarization maintaining fiber; Optical fiber collimator becomes parallel beam with pointolite; And the light beam modulating device, spot size and the shape of regulating optical fiber collimator output light.
3. litho machine as claimed in claim 2, it is characterized in that described light beam modulating device is the adjustable focus telescopic system, two groups of lens combination before and after described adjustable focus telescopic system comprises, preceding group lens combination comprises a plus lens, and back group lens combination comprises three by the eyeglass of Electric Machine Control.
4. litho machine as claimed in claim 2 is characterized in that, described light beam modulating device is spatial light modulator.
5. aim at means of illumination for one kind, comprise: provide an illuminating bundle by a LASER Light Source, described illuminating bundle process beam collimation forms parallel beam behind the unit, described parallel beam is characterized in that through the output of light beam modulating device the output facula of described light beam modulating device is according to size and the shape of the demand adjustment hot spot of lighting object.
6. an aligning means of illumination as claimed in claim 5 is characterized in that, described beam collimation unit comprises fiber coupler, and the optically-coupled that laser instrument is sent enters optical fiber; Single-mode polarization maintaining fiber; Optical fiber collimator becomes parallel beam with pointolite.
7. aligning means of illumination as claimed in claim 5, it is characterized in that described light beam modulating device is the adjustable focus telescopic system, two groups of lens combination before and after described adjustable focus telescopic system comprises, preceding group lens combination comprises a plus lens, and back group lens combination comprises three by the eyeglass of Electric Machine Control.
8. an aligning means of illumination as claimed in claim 5 is characterized in that, described light beam modulating device is spatial light modulator.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010217847 CN102314091B (en) | 2010-07-01 | 2010-07-01 | Lithography machine capable of adjusting size of lighting spot of alignment system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010217847 CN102314091B (en) | 2010-07-01 | 2010-07-01 | Lithography machine capable of adjusting size of lighting spot of alignment system |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102314091A CN102314091A (en) | 2012-01-11 |
| CN102314091B true CN102314091B (en) | 2013-07-17 |
Family
ID=45427367
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201010217847 Active CN102314091B (en) | 2010-07-01 | 2010-07-01 | Lithography machine capable of adjusting size of lighting spot of alignment system |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102314091B (en) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9553422B2 (en) | 2009-08-04 | 2017-01-24 | Medical Coherence Llc | Multiple aperture hand-held laser therapy apparatus |
| CN103376672B (en) * | 2012-04-22 | 2015-03-25 | 上海微电子装备有限公司 | Aligning signal processing system for photolithographic equipment |
| CN103425005B (en) * | 2012-05-22 | 2015-09-30 | 上海微电子装备有限公司 | Based on mask pre-alignment system and the pre-alignment method of modulation of source |
| WO2013191255A1 (en) * | 2012-06-21 | 2013-12-27 | 株式会社ニコン | Illumination apparatus, processing apparatus, and method for manufacturing device |
| CN105246548B (en) * | 2013-04-30 | 2018-04-06 | 麦迪科伦斯公司 | Multiple aperture Handheld laser therapeutic equipment |
| CN104216234B (en) * | 2013-06-05 | 2016-05-25 | 中芯国际集成电路制造(上海)有限公司 | The symmetric detection method of etching system light source |
| CN103532253B (en) * | 2013-10-30 | 2016-03-30 | 中国科学院半导体研究所 | Laser radio energy output system |
| CN103698895A (en) * | 2013-12-19 | 2014-04-02 | 北京见龙远景科技有限公司 | Laser lens |
| CN113608413A (en) * | 2016-09-30 | 2021-11-05 | 株式会社尼康 | Measuring system |
| CN106646505B (en) * | 2016-12-30 | 2023-05-02 | 中国科学院西安光学精密机械研究所 | Probe light homogenizing system and homogenizing method for arbitrary reflection surface speed interferometer |
| CN111381449B (en) * | 2018-12-29 | 2021-08-20 | 上海微电子装备（集团）股份有限公司 | Wave aberration measuring device and method |
| CN111240028A (en) * | 2020-03-06 | 2020-06-05 | 上海瑞立柯信息技术有限公司 | Dynamic light field generating method and generating device |
| CN114326313B (en) * | 2020-09-29 | 2024-01-23 | 长鑫存储技术有限公司 | Method for simultaneously monitoring multiple lighting conditions |
| CN112495941B (en) * | 2020-11-10 | 2022-06-21 | 江苏大学 | Remote laser cleaning system |
| CN114047137B (en) * | 2021-09-28 | 2023-09-12 | 深圳市麓邦技术有限公司 | Polarization information conversion or duplication splicing method |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1506768A (en) * | 2002-09-20 | 2004-06-23 | Asml荷兰有限公司 | Alignment system and method for photoetching system |
| CN1527139A (en) * | 2003-03-07 | 2004-09-08 | Asml | Photoetching apparatus and devices producing method |
| JP2005167139A (en) * | 2003-12-05 | 2005-06-23 | Canon Inc | Wavelength selection method, position detection method and apparatus, and exposure apparatus |
| CN1936711A (en) * | 2006-10-18 | 2007-03-28 | 上海微电子装备有限公司 | Alignment system for photoetching device and stage jointing grating system |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4095391B2 (en) * | 2002-09-24 | 2008-06-04 | キヤノン株式会社 | Position detection method |
-
2010
- 2010-07-01 CN CN 201010217847 patent/CN102314091B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1506768A (en) * | 2002-09-20 | 2004-06-23 | Asml荷兰有限公司 | Alignment system and method for photoetching system |
| CN1527139A (en) * | 2003-03-07 | 2004-09-08 | Asml | Photoetching apparatus and devices producing method |
| JP2005167139A (en) * | 2003-12-05 | 2005-06-23 | Canon Inc | Wavelength selection method, position detection method and apparatus, and exposure apparatus |
| CN1936711A (en) * | 2006-10-18 | 2007-03-28 | 上海微电子装备有限公司 | Alignment system for photoetching device and stage jointing grating system |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102314091A (en) | 2012-01-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102314091B (en) | Lithography machine capable of adjusting size of lighting spot of alignment system | |
| CN101943865B (en) | Alignment marks for photoetching equipment and alignment method | |
| CN101165597B (en) | Aligning system and lightscribing device using the system | |
| CN101566800B (en) | Aligning system and aligning method for lithography equipment | |
| CN101329514B (en) | System and method for aligning photolithography apparatus | |
| CN101251724B (en) | Aligning system, method and lithographic device thereof | |
| CN101299132B (en) | Aligning mark used for photolithography equipment aligning system and its use method | |
| CN100468213C (en) | Alignment system for photoetching device and stage jointing grating system | |
| CN101241313B (en) | Lithographic equipment aligning system based on machine vision and alignment method | |
| CN102540778B (en) | Measuring system and photoetching device using same | |
| CN101251725B (en) | Aligning system, mark, method for lithographic device and lithographic device thereof | |
| CN100527000C (en) | Aligning mark and aligning system | |
| CN101446775B (en) | Alignment light source apparatus | |
| CN101135860B (en) | Light scribing device and Aligning system and aligning method used for light scribing device | |
| CN101149564B (en) | Alignment mark and its imaging optical system and imaging method | |
| CN101158818A (en) | Alignment apparatus, alignment method and imagery quality detecting method | |
| CN103309169A (en) | Detection apparatus, exposure apparatus, and method of manufacturing device | |
| CN101551593A (en) | Alignment system for lithography equipment, lithography equipment and aligning method thereof | |
| CN102096325A (en) | Light intensity attenuation device and method | |
| CN101526750A (en) | Alignment system for photolithographic device and photolithographic device applying same | |
| CN1700101B (en) | Focusing and leveling sensor for projection photo-etching machine | |
| CN104062859A (en) | Lithography equipment aligning system | |
| CN104133350A (en) | Aligning system and aligning method for photolithographic device | |
| CN102890433B (en) | Alignment device and alignment method for lithography equipment | |
| CN101510055B (en) | Alignment system and alignment method for photolithography equipment |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 201203 1525 Zhang Dong Road, Zhangjiang hi tech park, Pudong District, Shanghai Patentee after: Shanghai microelectronics equipment (Group) Limited by Share Ltd Address before: 201203 1525 Zhang Dong Road, Zhangjiang hi tech park, Pudong District, Shanghai Patentee before: Shanghai Micro Electronics Equipment Co., Ltd. |
|
| CP01 | Change in the name or title of a patent holder |