CN102445865A - Photo-etching graphic alignment marking method capable of reducing alignment bias of photo-etching machine - Google Patents
Photo-etching graphic alignment marking method capable of reducing alignment bias of photo-etching machine Download PDFInfo
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- CN102445865A CN102445865A CN2011103498903A CN201110349890A CN102445865A CN 102445865 A CN102445865 A CN 102445865A CN 2011103498903 A CN2011103498903 A CN 2011103498903A CN 201110349890 A CN201110349890 A CN 201110349890A CN 102445865 A CN102445865 A CN 102445865A
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Abstract
The invention discloses a photo-etching graphic alignment marking method capable of reducing an alignment bias of a photo-etching machine, and the method comprises a step of providing a photo-etching graphic alignment mark, wherein the photo-etching graphic alignment mark is located in a first protecting band in the middle of an aligned graph; an aligned graph protecting band is located in a cutting band; a second protecting band and a separating band are respectively distributed on two sides of the cutting band; the photo-etching graphic alignment mark is composed of a plurality of mutually parallel rectangular strips; and the mutually parallel rectangular strips are vertical to the cutting band and are arranged in turn in the first protecting band in the middle of the aligned graph. Compared with the prior art, the photo-etching graphic alignment marking method has the beneficial effects that 1) under the design accuracy of the existing photo-etching machine, the width of the graph is reduced and other interfering graphs along a signal scanning direction are removed, thereby reducing interfering signals and avoiding the alignment bias; and 2) the graph is suitable for all products.
Description
Technical field
The present invention relates to the microelectronic photoetching technique, relate in particular to a kind of litho pattern alignment mark method that reduces the litho machine deviation of the alignment.
Background technology
Because the design singularity of Nikon litho machine, prealignment need be selected the special graph parallel with Cutting Road, but because the designing requirement of various products, the design configuration that product can occur disturbs the signal of alignment patterns, makes the prealignment of litho machine deviation occur.Fig. 1 is Nikon standard alignment patterns synoptic diagram, and is as shown in the figure, and some litho pattern alignment marks 1 are parallel with the direction of cutting belt 0.Industry generally uses the live width that changes alignment patterns to avoid the interference of product figure at present, and situation about doing like this is exactly that Different products possibly need different definition, but operating position is also undesirable, and the probability that deviation occurs is still very high.
Summary of the invention
To the problem of above-mentioned existence, the purpose of this invention is to provide a kind of litho pattern alignment mark method that reduces the litho machine deviation of the alignment, realize reducing the litho machine deviation of the alignment through the placing direction that changes alignment patterns when the photoetching.
The objective of the invention is to realize through following technical proposals:
A kind of litho pattern alignment mark method that reduces the litho machine deviation of the alignment; The litho pattern alignment mark is provided; The litho pattern alignment mark is positioned at alignment patterns middle part first boundary belt; The alignment patterns boundary belt is positioned at cutting belt, and the cutting belt both sides are distributed with second boundary belt and dividing strip respectively, and the litho pattern alignment mark is some rectangular strips that are parallel to each other; Wherein, said some rectangular strips that is parallel to each other are arranged in first boundary belt of said alignment patterns middle part perpendicular to said cutting belt direction ground successively.
Above-mentioned litho pattern alignment mark method, wherein, said some rectangular strips that are parallel to each other are 3.
Above-mentioned litho pattern alignment mark method, wherein, said first boundary belt is a rectangle, the length of said litho pattern alignment mark is identical with the width of said first boundary belt.
Above-mentioned litho pattern alignment mark method, wherein, the length of said first boundary belt is 240 microns.
Above-mentioned litho pattern alignment mark method, wherein, the width of said first boundary belt is 60 microns.
Above-mentioned litho pattern alignment mark method, wherein, said second boundary belt is close to said cutting belt.
Compared with present technology, beneficial effect of the present invention is:
1, under the design accuracy of existing litho machine, shorten the width of figure, get rid of other jamming pattern of signal scanning direction, so just reduce undesired signal and avoided deviation of the alignment;
2, all products can use this figure.
Description of drawings
Fig. 1 is the structural representation of the litho pattern in the litho machine alignment procedures in the prior art;
Fig. 2 is the structural representation of the litho pattern of the present invention's litho pattern alignment mark method of reducing the litho machine deviation of the alignment;
Fig. 3 a, Fig. 3 b are respectively employing standard alignment patterns and adopt the later alignment patterns signal graph of alignment mark figure of the present invention;
Fig. 4 adopts every batch of product to use test pattern and later aligning and the production time synoptic diagram of alignment mark figure of the present invention.
Embodiment
Below in conjunction with schematic diagram and concrete operations embodiment the present invention is described further.
As shown in Figure 2; The litho pattern alignment mark method that the present invention reduces the litho machine deviation of the alignment provides litho pattern alignment mark 1; Litho pattern alignment mark 1 is positioned at alignment patterns middle part first boundary belt 2; Alignment patterns boundary belt 2 is positioned at cutting belt 0, and cutting belt 0 both sides are distributed with second boundary belt 3 and dividing strip 4 respectively.Litho pattern alignment mark 1 is some rectangular strips that are parallel to each other, and rectangular strip is arranged in first boundary belt 2 of alignment patterns middle part perpendicular to cutting belt 0 direction ground successively.Compared with prior art, be exactly in fact when design configuration to revolve original standard graphics and turn 90 degrees, the width that shortens figure then gets final product.
Particularly, some rectangular strips that are parallel to each other 1 are 3.First boundary belt 2 is a rectangle, and the length of litho pattern alignment mark 1 is identical with the width of first boundary belt 2.The length of first boundary belt 2 is 240 microns, and width is 60 microns, and second boundary belt, 3 next-door neighbour's cutting belt 0.
Adopt after the lithography alignment figure of the present invention, shown in Fig. 3 a and Fig. 3 b, visible through contrasting, the signal trough of novel alignment patterns is more clear, and the aligned of litho machine just relatively accurately like this; Referring to shown in Figure 4; The time of running every batch of product needed from litho machine can show the frequency that uses novel alignment patterns can reduce alignment offset greatly; Thereby the time waste of having avoided reregistration to cause, and finally reduced production time of entire block.
More than specific embodiment of the present invention is described in detail, but the present invention is not restricted to the specific embodiment of above description, it is just as example.To those skilled in the art, any equivalent modifications that this litho pattern alignment mark method is carried out with substitute also all among category of the present invention.Therefore, not breaking away from impartial conversion and the modification of having done under the spirit and scope of the present invention, all should contain within the scope of the invention.
Claims (6)
1. litho pattern alignment mark method that reduces the litho machine deviation of the alignment; The litho pattern alignment mark is provided; The litho pattern alignment mark is positioned at alignment patterns middle part first boundary belt; The alignment patterns boundary belt is positioned at cutting belt, and the cutting belt both sides are distributed with second boundary belt and dividing strip respectively, and the litho pattern alignment mark is some rectangular strips that are parallel to each other; It is characterized in that said some rectangular strips that are parallel to each other are arranged in first boundary belt of said alignment patterns middle part perpendicular to said cutting belt direction ground successively.
2. litho pattern alignment mark method according to claim 1 is characterized in that, said some rectangular strips that are parallel to each other are 3.
3. litho pattern alignment mark method according to claim 1 is characterized in that said first boundary belt is a rectangle, and the length of said litho pattern alignment mark is identical with the width of said first boundary belt.
4. according to any described litho pattern alignment mark method in the claim 3, it is characterized in that the length of said first boundary belt is 240 microns.
5. according to any described litho pattern alignment mark method in the claim 3, it is characterized in that the width of said first boundary belt is 60 microns.
6. litho pattern alignment mark method according to claim 1 is characterized in that said second boundary belt is close to said cutting belt.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011103498903A CN102445865A (en) | 2011-11-08 | 2011-11-08 | Photo-etching graphic alignment marking method capable of reducing alignment bias of photo-etching machine |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011103498903A CN102445865A (en) | 2011-11-08 | 2011-11-08 | Photo-etching graphic alignment marking method capable of reducing alignment bias of photo-etching machine |
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|---|---|
| CN102445865A true CN102445865A (en) | 2012-05-09 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2011103498903A Pending CN102445865A (en) | 2011-11-08 | 2011-11-08 | Photo-etching graphic alignment marking method capable of reducing alignment bias of photo-etching machine |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114077170A (en) * | 2020-08-14 | 2022-02-22 | 长鑫存储技术有限公司 | Alignment pattern |
| US11635680B2 (en) | 2020-08-14 | 2023-04-25 | Changxin Memory Technologies, Inc. | Overlay pattern |
Citations (5)
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| US20080212057A1 (en) * | 2006-12-12 | 2008-09-04 | Asml Netherlands B.V. | Substrate comprising a mark |
| CN101299132A (en) * | 2008-05-27 | 2008-11-05 | 上海微电子装备有限公司 | Aligning mark used for photolithography equipment aligning system and its use method |
| CN101551593A (en) * | 2009-04-24 | 2009-10-07 | 上海微电子装备有限公司 | Alignment system for lithography equipment, lithography equipment and aligning method thereof |
| CN101943865A (en) * | 2009-07-09 | 2011-01-12 | 上海微电子装备有限公司 | Alignment marks for photoetching equipment and alignment method |
| US20110117719A1 (en) * | 2009-11-19 | 2011-05-19 | Brown William R | Methods of processing semiconductor substrates in forming scribe line alignment marks |
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2011
- 2011-11-08 CN CN2011103498903A patent/CN102445865A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080212057A1 (en) * | 2006-12-12 | 2008-09-04 | Asml Netherlands B.V. | Substrate comprising a mark |
| CN101299132A (en) * | 2008-05-27 | 2008-11-05 | 上海微电子装备有限公司 | Aligning mark used for photolithography equipment aligning system and its use method |
| CN101551593A (en) * | 2009-04-24 | 2009-10-07 | 上海微电子装备有限公司 | Alignment system for lithography equipment, lithography equipment and aligning method thereof |
| CN101943865A (en) * | 2009-07-09 | 2011-01-12 | 上海微电子装备有限公司 | Alignment marks for photoetching equipment and alignment method |
| US20110117719A1 (en) * | 2009-11-19 | 2011-05-19 | Brown William R | Methods of processing semiconductor substrates in forming scribe line alignment marks |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114077170A (en) * | 2020-08-14 | 2022-02-22 | 长鑫存储技术有限公司 | Alignment pattern |
| CN114077170B (en) * | 2020-08-14 | 2022-11-18 | 长鑫存储技术有限公司 | Alignment pattern |
| US11635680B2 (en) | 2020-08-14 | 2023-04-25 | Changxin Memory Technologies, Inc. | Overlay pattern |
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Application publication date: 20120509 |