CN102385263B - Method for aligning previous-layer graphs and photomask applicable to method - Google Patents
Method for aligning previous-layer graphs and photomask applicable to method Download PDFInfo
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- CN102385263B CN102385263B CN201010267510.7A CN201010267510A CN102385263B CN 102385263 B CN102385263 B CN 102385263B CN 201010267510 A CN201010267510 A CN 201010267510A CN 102385263 B CN102385263 B CN 102385263B
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Abstract
The invention provides a method for aligning previous-layer graphs, which comprises the following steps: firstly, at least one group of detection patterns are molded nearby alignment marks in the previous-layer graphs on a wafer, and each group of detection patterns comprise repeated linear patterns arranged side by side at equal intervals; then optical scattering measurement is carried out on the detection patterns to obtain a group of detection patterns with the best measurement quality; and then alignment marks near the group of detection patterns with the best quality are selected by an exposure stock to align the previous-layer graphs on the wafer. In a method for evaluating the alignment mark quality disclosed by the invention, the regularly arranged detection patterns are arranged on the wafer, so the detection patterns can be measured in an optical scattering measurement means, the molding quality of the alignment marks near the detection patterns can be further evaluated, and the alignment marks in the best molding condition are utilized for alignment so as to avoid the situation that partial wafers which can be used for processing qualified products are rejected from further processing by equipment.
Description
Technical field
The present invention relates to integrated circuit processing technique field, be specifically related to a kind of method and applicable light shield (mask) of the method that front layer pattern (pre-layer) is aimed at.
Background technology
In CMOS technology, silicon chip or wafer need to comprise the machine-shaping of the multilayers such as metal level, oxide layer, dielectric layer.After newly increasing one deck, generally need to carry out planarization to it, to carry out the machine-shaping of lower one deck.The object of chemical-mechanical planarization (CMP, Chemical Mechanical Planarization) technique is the flattening surface that makes silicon chip or wafer, and this is that height by part outstanding silicon chip surface being thinned to recessed portion is realized.Silicon chip surface is uneven has brought difficulty to following process, and CMP makes the irregularity degree of this silicon chip surface see minimum.CMP combines with mechanical lapping with chemical corrosion, the thickness of wishing to remove silicon chip top.Major equipment is buffing machine, and utility appliance comprises brushing machine (wafer scrubber), cleaning device and measurement mechanism.
Alignment mark is a kind of mark that is used for aiming at anterior layer and rear layer pattern, and it is generally, and light shield is provided with, and two groups of 70-90 microns are wide, the linear pattern in the long rectangular area of 600-800 micron, and the threadlike graph in these two groups of alignment marks is mutually vertical setting.For the alignment mark being applicable on the light shield of positive photoresist, it generally comprises multiple groups pattern every group of alignment mark linear pattern, each group pattern comprises the linear pattern be arrangeding in parallel that 2-4 bar can shut out the light, and the interval of adjacent Liang Ge group pattern is in 10-20 micron distance.In existing photoetching process process, when particularly Qi Qiandao Yu Hou road processing procedure comprises CMP technique, exposure bench needed front layer pattern to aim at before carrying out photoetching, by the Ear Mucosa Treated by He Ne Laser Irradiation alignment mark with special wavelength and receive the signal of its reflection.Because CMP technique can cause the residual of tungsten or copper, in the time carrying out pre-check to wafer, above-mentioned residue can change the crudy of alignment mark.The alignment mark of current layer is damaged, while making to process the graphical quality decline obtaining, the reflected light signal that can cause reception cannot be correctly validated, and exposure bench refusal wafer (wafer reject) even occurs to carry out wafer alignment thereby have influence on alignment precision.
Optical scattering measurement is to utilize grating scattering principle can measure the live width size in certain area with repetitive structure figure, and therefore optical scattering measurement is not suitable for measuring the figure with unequal interval size.
Summary of the invention
In view of this, fundamental purpose of the present invention is for detecting the quality of anterior layer alignment mark in prior art processing procedure, thereby easily cause exposure bench mistake to aim at and refuse the technical matters of the generation of the situations such as wafer, provide a kind of by patterned check pattern is set around alignment mark, and by the measurement assessment to this check pattern, instruct the method that front layer pattern is aimed at.
Further, provide a kind of and of the present invention front layer pattern is aimed to applicable light shield.
For achieving the above object, technical scheme provided by the invention is as follows:
The method that front layer pattern is aimed at, comprises the following steps:
First, near the alignment mark in the front layer pattern on wafer, mold at least one group of check pattern, described in every group, check pattern comprises that interval equates the repetition linear pattern being set up in parallel;
Then, described check pattern is carried out to optical scattering measurement, obtain check pattern described in best one group of measurement quality;
Again then, exposure bench is selected near the alignment mark described top-quality one group of check pattern, carries out the aligning to the front layer pattern on wafer.
Preferably, described in mold every group, check pattern is positioned at the long and wide 40-60 of being respectively micron (μ is regional extent m).
The width of the described repetition linear pattern preferably, molding and interval are 1-10 micron, and (μ m).
Preferably, mold check pattern described at least two groups near the alignment mark in the front layer pattern on wafer, wherein described in two groups, the described repetition linear pattern in check pattern is mutually vertical.
Preferably, the optical scattering measurement of described check pattern being carried out comprises one in its live width, thickness, side angle or spectrum or several the measurements of carrying out.
The light shield that a kind of said method is applicable, described light shield is provided with for the alignment mark of moulding alignment mark and covers shadow, near described alignment mark is covered shadow, be also provided with at least one group of check pattern that is used for moulding check pattern and cover shadow, described in every group, check pattern is covered shadow and is comprised that interval equates that the repetition linear pattern being set up in parallel covers shadow.
Preferably, described check pattern is covered shadow and is adapted at length on wafer and the wide 40-60 of the being respectively micron (check pattern that μ m) molds in regional extent.
Preferably, described repetition linear pattern is covered shadow and is adapted at forming width and interval on wafer and is 1-10 micron (μ repetition linear pattern m).
Preferably, described check pattern is covered shadow and is provided with altogether two groups, and described in two groups, check pattern is covered described repetition linear pattern in shadow to cover shade vertical mutually.
The method of assessment alignment mark quality of the present invention has following beneficial effect:
The method of assessment alignment mark quality of the present invention, by regularly arranged check pattern is set on wafer, the means that can measure with optical scattering it are measured, and then can assess near the shaping situation of the alignment mark it, utilize the best alignment mark of moulding situation to aim at, thereby the situation that the wafer of having avoided part can process specification product is further processed by equipment refusal occur.
Brief description of the drawings
Fig. 1 is the applicable light shield of the method that front layer pattern is aimed at of the present invention, and the alignment mark in a kind of embodiment is covered shadow and check pattern and cover the schematic diagram of shadow;
Fig. 2 is that one group of check pattern in the light shield shown in Fig. 1 is covered in shadow, and the repetition wire of a-quadrant is covered the local enlarged diagram of shadow;
Reference numeral in figure is expressed as:
101-alignment mark is covered shadow; Mono-group of check pattern of 102-is covered shadow; 103-photic zone; The light tight district of 104-.
Embodiment
The present invention arranges check pattern by near position alignment mark, and measure by the mode of described check pattern being carried out to optical scattering measurement, instruct and aim at according to measurement result, thereby accomplish that the wafer of farthest avoiding part can process specification product is occurred by the situation of the further processing of equipment refusal, avoids the waste of wafer.
For making object of the present invention, technical scheme and advantage clearer, referring to the accompanying drawing embodiment that develops simultaneously, the present invention is described in more detail.
Embodiment 1
Fig. 1 and Fig. 2 have shown a kind of method that front layer pattern is aimed at of the present invention and the applicable light shield of the method.Light shield in the present embodiment is suitable for positive photoresist to expose and be suitable for, this light shield is provided with two groups of alignment marks that are used for moulding alignment mark and covers shadow, one group of alignment mark shown in Fig. 1 is covered shadow 101, (μ is m) wide to be distributed in 70-90 micron, 600-800 micron is (in the region that μ m) grows, it comprises the linear pattern of multiple groups, the linear pattern of each group comprises 3 linear pattern that be arranged in parallel that can shut out the light, the linear pattern interval 10-20 micron of multiple groups arranges, and, near two middle group's linear pattern interval 100-150 microns, (μ m) arranges that (alignment key pattern shown in Fig. 1 is for its roughly regularity of distribution is described, those skilled in the art can be known the concrete shape of alignment mark, quantity and arrangement mode).Near described alignment mark is covered shadow 101, be also provided with 3 groups of check pattern that are used for moulding check pattern and cover shadow 102, wherein two groups of belows, one group of top, described in every group, check pattern is covered shadow 102 and is comprised that interval equates that the repetition linear pattern being set up in parallel covers shadow.Described in every group, check pattern is covered length and the wide 40-60 of the being respectively micron that shadow 102 is suitable on wafer and (in μ regional extent m), is molded check pattern, this check pattern is overlooks figure and described check pattern to cover shadow 102 identical, has the crystal column surface structure of projection and depression.As shown in Figure 1, be arranged in described alignment mark and cover check pattern described near group shadow 101 right sides, below and cover the repetition linear pattern of shadow 102 and cover shadow, covering repetition linear pattern in shadow 102 with check pattern described in other two groups, to cover shade vertical mutually.
The local enlarged diagram showing according to Fig. 2 can obtain, and the width that described repetition linear pattern is covered shadow is the width of photic zone 103, and the interval that described repetition linear pattern is covered shadow is the width in light tight district 104.The width in described photic zone 103 and described light tight district 104, (μ m) to be respectively 1-10 micron.
It should be noted that, in Fig. 1 and Fig. 2, specifically do not demonstrate check pattern and cover photic zone 103 in shadow 102 and the number of light tight district 104 quantity, just demonstrated the relation that is spaced in photic zone 103 and light tight district 104.Concrete photic zone 103 and light tight district 104 quantity, the size that need to cover shadow 102 according to its width separately and check pattern determines.Described repetition linear pattern is covered width and the interval of shadow, be photic zone 103 and light tight district 104 width separately, generally can select to cover pattern in shadow 101 with described alignment mark and cover the numerical value that the width of shadow is close with interval, the moulding situation that is beneficial to cover shadow by check pattern detects the moulding situation of alignment mark.
Utilize the above-mentioned light shield of covering shadow 102 with check pattern to carry out wafer photolithography and add man-hour, exposure bench can adopt following method to aim at front layer pattern, and the method comprises the following steps:
First, utilize the light shield of covering shadow 102 with check pattern, near the alignment mark of going forward in layer pattern at wafer, mold 3 groups of check pattern, described in every group, check pattern comprises that interval equates the repetition linear pattern being set up in parallel, certainly in other embodiment, it can also be to be provided with altogether two groups or 4 groups or more groups that check pattern is covered shadow; Cover shadow by these check pattern and can on wafer, make check pattern by lithography, and then can detect the Forming Quality of described alignment key pattern, instruct the aligning to front layer pattern;
Then, described check pattern is carried out to optical scattering and measure and finally obtain live width, thickness, side angle, a series of data that can detect alignment mark quality such as spectrum, and draw check pattern described in best one group of measurement quality by above-mentioned measurement result data; Certainly, in other embodiment, also can, by measuring or a few item number certificate in live width, thickness, side angle and spectrum, as the data that detect alignment mark quality, only need obtain being enough to the data for detecting its quality;
Again then, exposure bench is selected near the alignment mark described top-quality one group of check pattern, carries out the aligning to the front layer pattern on wafer.
The method of assessment alignment mark quality of the present invention, by regularly arranged check pattern is set on wafer, the means that can measure with optical scattering it are measured, and then can assess near the shaping situation of the alignment mark it, utilize the best alignment mark of moulding situation to aim at, refuse the situation of further lithography process and occur thereby the wafer of having avoided part can process specification product is exposed board.
In other embodiment, in order to ensure the default patterning photoresist coating of formation on wafer, can on the light shield of negative photoresist, cover shadow pattern by being applicable to, be designed to above-mentioned embodiment in to cover shadow pattern complementary, do not repeat them here.
The foregoing is only preferred embodiment of the present invention, in order to limit the present invention, within the spirit and principles in the present invention not all, any amendment of making, be equal to replacement, improvement etc., within all should being included in the scope of protection of the invention.
Claims (9)
1. a method of front layer pattern being aimed at, is characterized in that, comprises the following steps:
First, near the alignment mark in the front layer pattern on wafer, mold at least one group of check pattern, described in every group, check pattern comprises that interval equates the repetition linear pattern being set up in parallel;
Then, described check pattern is carried out to optical scattering measurement, obtain check pattern described in best one group of measurement quality;
Again then, exposure bench is selected near the alignment mark described top-quality one group of check pattern, carries out the aligning to the front layer pattern on wafer.
2. method according to claim 1, is characterized in that, described in mold every group, check pattern is positioned at the long and wide 40-60 of being respectively micron (μ is regional extent m).
3. method according to claim 1, is characterized in that, the width of the described repetition linear pattern molding and interval are 1-10 micron (μ m).
4. method according to claim 1, is characterized in that, molds check pattern described at least two groups near the alignment mark in the front layer pattern on wafer, and wherein described in two groups, the described repetition linear pattern in check pattern is mutually vertical.
5. method according to claim 1, is characterized in that, the optical scattering measurement that described check pattern is carried out comprises one in its live width, thickness, side angle or spectrum or several the measurements of carrying out.
6. the light shield that method claimed in claim 1 is applicable, described light shield is provided with for the alignment mark of moulding alignment mark and covers shadow, it is characterized in that, near described alignment mark is covered shadow, be also provided with at least one group of check pattern that is used for moulding check pattern and cover shadow, described in every group, check pattern is covered shadow and is comprised that interval equates that the repetition linear pattern being set up in parallel covers shadow.
7. light shield according to claim 6, is characterized in that, described check pattern is covered shadow and is adapted at length on wafer and the wide 40-60 of the being respectively micron (check pattern that μ m) molds in regional extent.
8. light shield according to claim 6, is characterized in that, described repetition linear pattern is covered shadow and is adapted at forming width and interval on wafer and is 1-10 micron (μ repetition linear pattern m).
9. light shield according to claim 6, is characterized in that, described check pattern is covered shadow and is provided with altogether two groups, and described in two groups, check pattern is covered described repetition linear pattern in shadow to cover shade vertical mutually.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010267510.7A CN102385263B (en) | 2010-08-25 | 2010-08-25 | Method for aligning previous-layer graphs and photomask applicable to method |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201010267510.7A CN102385263B (en) | 2010-08-25 | 2010-08-25 | Method for aligning previous-layer graphs and photomask applicable to method |
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| Publication Number | Publication Date |
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| CN102385263A CN102385263A (en) | 2012-03-21 |
| CN102385263B true CN102385263B (en) | 2014-10-01 |
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Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102479687B (en) * | 2010-11-22 | 2014-07-16 | 中芯国际集成电路制造(上海)有限公司 | Method for increasing latitude of posterior layer exposure process |
| CN105319834B (en) * | 2014-07-31 | 2019-10-25 | 山东华光光电子股份有限公司 | A kind of lithography mask version and its application with integrated detection label |
| CN109901359A (en) * | 2017-12-11 | 2019-06-18 | 长鑫存储技术有限公司 | For the alignment patterns of exposure mask, exposure mask and wafer |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0997782A1 (en) * | 1998-10-28 | 2000-05-03 | Nec Corporation | Reticle having mark for detecting alignment and method for detected alignment |
| CN101299132A (en) * | 2008-05-27 | 2008-11-05 | 上海微电子装备有限公司 | Aligning mark used for photolithography equipment aligning system and its use method |
| CN101369571A (en) * | 2007-08-17 | 2009-02-18 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor device, wafer coarse alignment mark and coarse alignment method |
| CN101566800A (en) * | 2009-02-27 | 2009-10-28 | 上海微电子装备有限公司 | Aligning system and aligning method for lithography equipment |
| CN101681118A (en) * | 2007-05-29 | 2010-03-24 | 株式会社尼康 | Exposure method and electronic device manufacturing method |
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2010
- 2010-08-25 CN CN201010267510.7A patent/CN102385263B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0997782A1 (en) * | 1998-10-28 | 2000-05-03 | Nec Corporation | Reticle having mark for detecting alignment and method for detected alignment |
| CN101681118A (en) * | 2007-05-29 | 2010-03-24 | 株式会社尼康 | Exposure method and electronic device manufacturing method |
| CN101369571A (en) * | 2007-08-17 | 2009-02-18 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor device, wafer coarse alignment mark and coarse alignment method |
| CN101299132A (en) * | 2008-05-27 | 2008-11-05 | 上海微电子装备有限公司 | Aligning mark used for photolithography equipment aligning system and its use method |
| CN101566800A (en) * | 2009-02-27 | 2009-10-28 | 上海微电子装备有限公司 | Aligning system and aligning method for lithography equipment |
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