CN101290973A - Thin-film solar cell of polymer with laminated structure - Google Patents
Thin-film solar cell of polymer with laminated structure Download PDFInfo
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- CN101290973A CN101290973A CN 200810050656 CN200810050656A CN101290973A CN 101290973 A CN101290973 A CN 101290973A CN 200810050656 CN200810050656 CN 200810050656 CN 200810050656 A CN200810050656 A CN 200810050656A CN 101290973 A CN101290973 A CN 101290973A
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- 229920000642 polymer Polymers 0.000 title claims abstract description 44
- 239000010409 thin film Substances 0.000 title description 6
- 230000004048 modification Effects 0.000 claims abstract description 32
- 238000012986 modification Methods 0.000 claims abstract description 32
- 229910052751 metal Inorganic materials 0.000 claims abstract description 20
- 239000002184 metal Substances 0.000 claims abstract description 20
- 239000000203 mixture Substances 0.000 claims abstract description 18
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims description 102
- 239000011521 glass Substances 0.000 claims description 69
- 239000004411 aluminium Substances 0.000 claims description 17
- 229910052782 aluminium Inorganic materials 0.000 claims description 17
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 17
- 230000027756 respiratory electron transport chain Effects 0.000 claims description 17
- 230000005540 biological transmission Effects 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 15
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 12
- 239000004332 silver Substances 0.000 claims description 12
- 229910052709 silver Inorganic materials 0.000 claims description 12
- 239000010931 gold Substances 0.000 claims description 11
- 239000011575 calcium Substances 0.000 claims description 10
- 229910006404 SnO 2 Inorganic materials 0.000 claims description 9
- 239000002861 polymer material Substances 0.000 claims description 9
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical compound C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 claims description 8
- 150000004706 metal oxides Chemical class 0.000 claims description 8
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical compound C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 claims description 6
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 6
- 229910052791 calcium Inorganic materials 0.000 claims description 6
- 229910003472 fullerene Inorganic materials 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- JEDHEMYZURJGRQ-UHFFFAOYSA-N 3-hexylthiophene Chemical compound CCCCCCC=1C=CSC=1 JEDHEMYZURJGRQ-UHFFFAOYSA-N 0.000 claims description 4
- 241000790917 Dioxys <bee> Species 0.000 claims description 4
- 229930192474 thiophene Natural products 0.000 claims description 4
- 229920002554 vinyl polymer Polymers 0.000 claims description 4
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 claims description 2
- 239000004793 Polystyrene Substances 0.000 claims description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 2
- 239000004033 plastic Substances 0.000 claims description 2
- 229920003023 plastic Polymers 0.000 claims description 2
- 229920002223 polystyrene Polymers 0.000 claims description 2
- 229920000301 poly(3-hexylthiophene-2,5-diyl) polymer Polymers 0.000 claims 3
- 239000002253 acid Substances 0.000 claims 1
- 229920000547 conjugated polymer Polymers 0.000 abstract description 9
- 238000006243 chemical reaction Methods 0.000 abstract description 8
- 238000001228 spectrum Methods 0.000 abstract description 5
- 238000013087 polymer photovoltaic Methods 0.000 abstract description 3
- 230000005525 hole transport Effects 0.000 abstract 2
- 230000031700 light absorption Effects 0.000 abstract 2
- 238000002834 transmittance Methods 0.000 abstract 1
- MCEWYIDBDVPMES-UHFFFAOYSA-N [60]pcbm Chemical compound C123C(C4=C5C6=C7C8=C9C%10=C%11C%12=C%13C%14=C%15C%16=C%17C%18=C(C=%19C=%20C%18=C%18C%16=C%13C%13=C%11C9=C9C7=C(C=%20C9=C%13%18)C(C7=%19)=C96)C6=C%11C%17=C%15C%13=C%15C%14=C%12C%12=C%10C%10=C85)=C9C7=C6C2=C%11C%13=C2C%15=C%12C%10=C4C23C1(CCCC(=O)OC)C1=CC=CC=C1 MCEWYIDBDVPMES-UHFFFAOYSA-N 0.000 description 121
- 229920000144 PEDOT:PSS Polymers 0.000 description 49
- 238000001914 filtration Methods 0.000 description 40
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 description 36
- 239000011259 mixed solution Substances 0.000 description 32
- 238000003756 stirring Methods 0.000 description 31
- 238000010438 heat treatment Methods 0.000 description 29
- 238000001771 vacuum deposition Methods 0.000 description 29
- 239000000243 solution Substances 0.000 description 28
- 238000001816 cooling Methods 0.000 description 26
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 21
- 230000000052 comparative effect Effects 0.000 description 17
- 239000002904 solvent Substances 0.000 description 17
- 238000013019 agitation Methods 0.000 description 16
- 238000005530 etching Methods 0.000 description 16
- 239000010408 film Substances 0.000 description 16
- 238000004528 spin coating Methods 0.000 description 16
- 238000000137 annealing Methods 0.000 description 15
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 13
- 238000010790 dilution Methods 0.000 description 13
- 239000012895 dilution Substances 0.000 description 13
- 238000001704 evaporation Methods 0.000 description 9
- 230000008020 evaporation Effects 0.000 description 6
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 5
- 230000008033 biological extinction Effects 0.000 description 4
- 238000003475 lamination Methods 0.000 description 4
- 230000001105 regulatory effect Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
- 229920000109 alkoxy-substituted poly(p-phenylene vinylene) Polymers 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000013086 organic photovoltaic Methods 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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Abstract
The invention discloses a laminated polymer solar cell, which comprises a base plate, an anode layer, an anode modification layer, a first active layer, a cathode modification layer, a cathode layer and an intermediate electrode consisting of an electronic transport layer, a metal layer and a hole transport layer, wherein the intermediate electrode consists of an n-type metallic oxide electron transport layer and a p-type metallic oxide hole transport layer which are high in light transmittance. A thin layer of metal is inserted between the two metallic oxides and the effective combination of electrons and holes. The active layers of up and down two sub-cells of the laminated polymer solar cell are mixtures of identical or different conjugated polymers. The open circuit voltage of the laminated solar cell is the sum of the open circuit voltages of the up and down two sub-cells, so the serial connection of polymer photovoltaic cells is realized. The combined intermediated electrode structure can be wildly used in laminated devices with active layers made of conjugated polymers of different light absorption ranges, so as to well match the light absorption of the whole cell with the solar spectrum and improve the energy conversion rate.
Description
Technical field
The present invention relates to a kind of thin-film solar cell of polymer with laminated structure.
Background technology
Organic/conjugated polymer thin films solar cell have inorganic solar cell incomparable advantage, as: can prepare on the substrate of softness; Can realize industrialized production in the printing process continuously; Comparing production cost with the inorganic silicon battery can descend significantly; Important ecology and advantage are economically arranged.But conjugated polymer material has narrower absorption band usually, and not matching with sunlight spectrum causes light absorbing efficient lower.In addition, can all be absorbed even energy is higher than the photon of conjugated polymer band gap, the exciton that is in highly excited level will be got back to lowest excited attitude realization separation of charge in the mode that discharges heat, and so a lot of energy are just lost.Therefore adopt the different conjugated polymer material of extinction scope to prepare lamination solar cell and just can address this problem, improve the energy conversion efficiency of photovoltaic cell.
So-called lamination solar cell is exactly that the direction of two or more solar cells in vertical substrate stacked up, and the electrode of employing electrically conducting transparent connects in the mode of serial or parallel connection between the sub-battery.By selecting identical or different conjugated polymer material to realize the efficient absorption of incident light or covering whole sunlight spectrum to a greater degree, improve the energy conversion efficiency of organic/polymer photovoltaic cell as the photosensitive layer of sub-battery.
Report stacking polymer thin-film photovoltaic cell is following again two kinds at present.A kind of for transparent LiF (1nm)/Al (2.5nm)/Au (12.5nm) electrode be that the sub-battery of active layer is connected with the mode of series connection with parallel connection respectively with MEH-PPV:PCBM with two, realized stack (the Applied Physics Letters 2006 of polymer solar battery, 88,064104).Another kind of laminated cell adopts the different conjugated polymer material of extinction scope respectively as two sub-battery active layers up and down of laminated cell, adopts titanium oxide/poly-(3,4-vinyl dioxy thiophene) (TiO
x/ PEDOT) having prepared laminated construction conjugated polymer photovoltaic device as target, energy conversion efficiency reaches 6.2%, is the highest polymer thin-film solar cell of reporting at present (Science 2007,317,222) of energy conversion efficiency.
Summary of the invention
The invention provides a kind of polymer with laminated structure solar cell.Utilize this structure to realize the polymer with laminated structure solar cell, improve the performance of photovoltaic cell.This structure is mainly used in the lamination solar cell of the polymeric material of spin coating method preparation.
A kind of polymer with laminated structure solar cell provided by the invention, its inventive point is exactly the material of intermediate electrode structure and use, its structure as shown in Figure 1:
The 1st, substrate, material are glass or plastic layer;
The 2nd, indium tin oxide (ITO) anode layer, thickness is 180 nanometers;
The 3rd, the anode modification layer adopts (PEDOT) polystyrene doped sulfonic acid (PSS) of polythiofuran derivative poly-(3,4-vinyl dioxy thiophene), and wherein PEDOT is 1 to 6 with the weight ratio of PSS, and this anode modification layer thickness is the 20-100 nanometer;
4 is first active layers, is the blend of conjugate polymer material and fullerene derivate, and wherein preferred conjugate polymer material gathers 3-hexyl thiophene (P3HT) as electron donor, fullerene derivate [6,6]-2-phenyl C
61-2-butyric acid formicester (PCBM) is as electron acceptor, and wherein, the quality of PCBM accounts for the 40-80% of P3HT and PCBM gross mass, utilizes chlorobenzene dissolving and spin-coating film, and solution concentration is 10-20mg/ml, and thickness is the 50-150 nanometer;
The 5th, electron transfer layer, its material are n type metal oxide TiO
x, ZnO and SnO
2At least a, thickness is the 10-50 nanometer;
The 6th, metal level, its material are that metallic aluminium, silver and gold are at least a, and thickness is the 2-10 nanometer;
The 7th, hole transmission layer, its material are p type metal oxide MoO
3And WO
3At least a, thickness is the 5-20 nanometer;
Described electron transfer layer 5, metal level 6 and the hole transmission layer 7 common targets that constitute the polymer stack solar cell.
8 is second active layers, is the blend of conjugate polymer material and fullerene derivate, and wherein conjugate polymer material gathers 3-hexyl thiophene (P3HT) as electron donor, fullerene derivate [6,6]-2-phenyl C
61-2-butyric acid formicester (PCBM) is as electron acceptor, and the quality of PCBM accounts for the 40-80% of P3HT and PCBM gross mass, utilizes chlorobenzene dissolving and spin-coating film, and solution concentration is the 10-20 mg/ml, and thickness is the 50-150 nanometer;
The 9th, cathodic modification layer, its material are that LiF, CsF and CaO are at least a, and thickness is the 1-3 nanometer;
The 10th, cathode layer, its material are that metallic aluminium, silver and calcium are at least a, and thickness is the 60-200 nanometer.
The preparation process and the condition of stacking polymer solar cell of the present invention are as follows:
(1) ito anode layer 2 is formed the ITO electro-conductive glass with glass substrate 1; The fine strip shape ITO electro-conductive glass that etching is good cleans up and dries, be placed on the carriage of spin coater, filtering head by 0.45 micron, by proportioning PEDOT and PSS solution evenly are coated with completely whole slice, thin piece, by regulating 1200-5000 rpm of spin coater rotary speed, make PEDOT and PSS form the film of one deck 20-100 nanometer thickness on the surface of ito anode layer 2, as anode modification layer 3, the baking oven of putting into 120 ℃ heated 30 minutes;
(2) step (1) baking is the good ITO electro-conductive glass that scribbles anode modification layer 3 is transferred in the glove box, be placed on after the cooling on the spin coater carriage, by proportioning P3HT that stirs and the mixed solution of PCBM are evenly coated on this ITO electro-conductive glass by filtering head, by regulating 500-1000 rpm of spin coater rotating speed, on anode modification layer 3, obtain the ground floor active layer 4 of 50-150 nanometer;
In described P3HT that stirs and the PCBM mixed solution, the quality of PCBM accounts for the 40-80% of P3HT and PCBM gross mass; The preparation method of this mixed solution is as follows: be solvent with the chlorobenzene, concentration is the 10-20 mg/ml, and the quality of PCBM accounts for the 40-80% of P3HT and PCBM gross mass, adds thermal agitation 3 hours at 60 ℃, stops heating, continues to stir 12 hours;
(3) this ITO electro-conductive glass that scribbles one deck active layer 4 is taken out in glove box with shifting bottle, be placed on the spin coater carriage, being coated on the active layer 4 of the film that P3HT and PCBM constitute uniformly by filtering head with the n type oxide of the electric transmission of absolute ethyl alcohol dilution, by regulating 1500-3000 rpm of spin coater rotating speed, obtain the electron transfer layer 5 of 10-50 nanometer thickness; This ITO electro-conductive glass that has been coated with electron transfer layer 5 is transferred in the glove box once more, in glove box, heated the solvent in the removal electron transfer layer 5 10 minutes in 150 ℃ on the hot platform; After the cooling, put into vacuum coating equipment and vacuumize, when vacuum degree reaches 4 * 10
-4The metal level 6 of evaporation 2-10 nanometer thickness during Pascal, and then the p type metal oxide of evaporation 5-20 nanometer thickness form hole transmission layer 7;
(4) put on the spin coater carriage of glove box after the product that the make taking-up with step (3), is the concentration that stirs the above-mentioned mixed solution that the quality of 10-20 mg/ml, PCBM accounts for the 40-80% of P3HT and PCBM gross mass, be evenly coated on the cave transport layer 7 by filtering head, by regulating 500-1000 rpm of spin coater rotating speed, on cave transport layer 7, obtain the second layer active layer 8 of 50-150 nanometer;
(5) last, the product that make that step (4) is obtained are put into vacuum coating equipment and are vacuumized, when vacuum degree reaches 4 * 10
-4The cathodic modification layer 9 of evaporation 1-3 nanometer thickness during Pascal, evaporate the metal of 60-200 nanometer thickness again, constitute cathode layer 10, transfer in the glove box having steamed the cathode layer product that make afterwards, 110 ℃ of following heat treatments 5 minutes, encapsulate after being cooled to room temperature, finish the making of stacking polymer solar cell.
The polymer stack Solar cell performance that test the inventive method prepares under rayed at 100 milliwatt/square centimeters comprises open circuit voltage, short circuit current, energy conversion efficiency and fill factor, curve factor.Table 1 is the performance parameter of Comparative Examples I, II, III, IV, V, VI and embodiment 1,2,3,4,5,6,7,8,9 battery under 100 milliwatts/square centimeter white light.The open circuit voltage of polymer stack battery (embodiment 1) is approximately equal to two sub-batteries (Comparative Examples 1 and 2) open circuit voltage sum up and down as can be seen from Table 1.The open circuit voltage of two sub-batteries (Comparative Examples 1 and 2) is respectively 0.58 volt and 0.59 volt, and the open circuit voltage of laminated cell (embodiment 1) is 1.11 volts.The short circuit current of laminated cell is subject to the less sub-battery of short circuit current, the short circuit current of two sub-batteries (Comparative Examples 1 and 2) is respectively 9.10 and 6.78 milliamperes/square centimeter, because the active layer of two batteries up and down of laminated cell (embodiment 1) has identical extinction spectrum, further limited the short circuit current of laminated cell (embodiment 1), only be 4.05 milliamperes/square centimeter, the energy conversion efficiency and the fill factor, curve factor of laminated cell (embodiment 1) also have been subjected to influence thus, are respectively 2.01% and 0.45.Adopt the polymer stack solar cell ( embodiment 2,3,4,5,6,7,8,9) of other structures all to show laminate properties similar to Example 1, Fig. 2 is Comparative Examples I, Comparative Example II and the current-voltage characteristic curve of embodiment 1 under the white light of 100 milliwatt/square centimeters.Can find out more directly that by Fig. 2 the open circuit voltage of laminated cell is approximately equal to the stack of the open circuit voltage of two sub-batteries, illustrate that this target can realize being connected in series of polymer solar battery.
Beneficial effect of the present invention: the n type and p type oxide-metal combinations such as the Ti0 that adopt high permeability
x/ MoO
3As target, at two metal oxides such as Ti0
xAnd MoO
3Between introduce the skim metal such as aluminium is realized the effectively compound of electronics and hole.Utilizing the open circuit voltage of the stacking polymer solar cell of this target making is two sub-battery open circuit voltage sums, has realized being connected in series of polymer solar battery thus.This structure can be applicable to the making of the lamination solar cell of solution spin coating.Adopt P3HT and PCBM mixed solution to reach 1.10V as the open circuit voltage mean value of the polymer stack solar cell of active layer, peak efficiency reaches 2.01%.This novel intermediate electrode structure can be applied in the laminated device of the different active layer material of extinction scope, thereby improve the coupling of polymer solar battery absorption spectrum and sunlight spectrum, improve the energy conversion efficiency of polymer solar battery thus.
Description of drawings
Fig. 1 is a stacking polymer solar cell device structural representation.Wherein: the 1st, glass or flexible base, board; The 2nd, the ito anode layer; The 3rd, PEDOT:PSS anode modification layer; The 4th, first active layer that the P3HT:PCBM mixture is formed; The 5th, the electron transfer layer of n type metal oxide; The 6th, metal level; The 7th, the hole transmission layer of p type metal oxide; The 8th, second active layer that the P3HT:PCBM mixture is formed; The 9th, the cathodic modification layer; The 10th, the metallic cathode layer.
Fig. 2 is that Comparative Examples I, Comparative Example II and embodiment 1 are at 100mW/cm
2Current-voltage characteristic curve under the white light.Wherein: the 1st, the current-voltage characteristic curve of Comparative Examples I, the 2nd, the current-voltage characteristic curve of Comparative Example II, the 3rd, the current-voltage characteristic curve of embodiment 1.
Table 1 is the performance parameter contrast of Comparative Examples I, II, III, IV, V, VI and embodiment 1,2,3,4,5,6,7,8,9 under 100 milliamperes/square centimeter white light.
Embodiment:
Comparative Examples I:
Being solvent with the chlorobenzene, concentration is that 44% P3HT:PCBM mixed solution 60 degree that the quality of 18 mg/ml, PCBM accounts for gross mass added thermal agitation after 3 hours, stops heating and continues to stir 12 hours.
Ito anode layer and glass substrate are formed the ITO electro-conductive glass, and the fine strip shape ITO electro-conductive glass with certain width that etching is good cleans up and dries.Clean ito glass is placed on the carriage of spin coater, by 0.45 micron filtering head PEDOT:PSS solution evenly is coated with completely whole slice, thin piece, rotated one minute with the speed that per minute 3000 changes, make PEDOT:PSS form the film of one deck 40 nanometer thickness on the ITO surface, the baking oven of putting into 120 ℃ heated 30 minutes.
The ito substrate that scribbles PEDOT:PSS that baking is good is transferred in the glove box, treat to be placed on the spin coater carriage after the substrate cooling, the P3HT:PCBM mixed solution that stirs is evenly coated on the ito substrate by filtering head, rotated one minute with the speed that per minute 800 changes, obtain the middle active layer of 100 nanometers.
The substrate that scribbles active layer is taken out in glove box with shifting bottle, be placed on the spin coater carriage, TiO with the absolute ethyl alcohol dilution
xBe coated in uniformly on the P3HT:PCBM by filtering head, rotated one minute, obtain the TiO of 10 nanometer thickness with the speed that per minute 3000 changes
xLayer.To scribble TiO
xThe layer substrate transfer to once more in the glove box, in glove box on the hot platform 150 ℃ the heating 10 minutes.
After treating the substrate cooling, put into vacuum coating equipment and vacuumize, when vacuum degree reaches 4 * 10
-4Evaporate the aluminium of 100 nanometer thickness during Pascal.The effective area of battery is 12 square millimeters, and making structure is ITO/PEDOT:PSS (40nm)/P3HT:PCBM (100nm)/TiO
x(10nm)/polymer solar battery of Al (100nm).Finish that battery device is made and 110 ℃ of following thermal annealings 5 minutes in glove box.
Comparative Example II:
Ito anode layer and glass substrate are formed the ITO electro-conductive glass, and being solvent with the chlorobenzene, concentration is that 44% P3HT:PCBM mixed solution 60 degree that the quality of 18 mg/ml, PCBM accounts for gross mass added thermal agitation after 3 hours, closes heating and continues stirring 12 hours.
Ito anode layer and glass substrate are formed the ITO electro-conductive glass, and the fine strip shape ITO electro-conductive glass with certain width that etching is good cleans up and dries.Substrate is put into vacuum coating equipment vacuumize, when vacuum degree reaches 4 * 10
-4The MoO of evaporation 10 nanometer thickness during Pascal
3Substrate taken out put on the spin coater carriage of glove box, the speed spin coating P3HT:PCBM mixture that changes with per minute 800 one minute obtains the middle active layer of 100 nanometer thickness.
Vacuum coating equipment is put in the substrate taking-up that scribbles polymer vacuumized, when vacuum degree reaches 4 * 10
-4Evaporate the LiF of 1 nanometer thickness and the aluminium electrode of 100 nanometer thickness during Pascal.The effective area of battery is 12 square millimeters, and making structure is ITO/MoO
3(10nm)/polymer solar battery of P3HT:PCBM (100nm)/LiF (1nm)/Al (100nm).The battery that making finishes 110 ℃ of thermal annealings 5 minutes in glove box.
Comparative Example II I:
Being solvent with the chlorobenzene, concentration is that 40% P3HT:PCBM mixed solution 60 degree that the quality of 10 mg/ml, PCBM accounts for gross mass added thermal agitation after 3 hours, stops heating and continues to stir 12 hours.
Ito anode layer and glass substrate are formed the ITO electro-conductive glass, and the fine strip shape ITO electro-conductive glass with certain width that etching is good cleans up and dries.Clean ito glass is placed on the carriage of spin coater, by 0.45 micron filtering head PEDOT:PSS solution evenly is coated with completely whole slice, thin piece, rotated one minute with the speed that per minute 5000 changes, make PEDOT:PSS form the film of one deck 20 nanometer thickness on the ITO surface, the baking oven of putting into 120 ℃ heated 30 minutes.
The ito substrate that scribbles PEDOT:PSS that baking is good is transferred in the glove box, treat to be placed on the spin coater carriage after the substrate cooling, the P3HT:PCBM mixed solution that stirs is evenly coated on the ito substrate by filtering head, rotated one minute with the speed that per minute 1000 changes, obtain the middle active layer of 50 nanometers.
The substrate that scribbles active layer is taken out in glove box with shifting bottle, be placed on the spin coater carriage, ZnO with the absolute ethyl alcohol dilution is coated on the P3HT:PCBM uniformly by filtering head, rotated one minute, obtain the ZnO layer of 50 nanometer thickness with the speed that per minute 1500 changes.The substrate that scribbles the ZnO layer is transferred in the glove box once more, in glove box on the hot platform 150 ℃ the heating 10 minutes.
After treating the substrate cooling, put into vacuum coating equipment and vacuumize, when vacuum degree reaches 4 * 10
-4Evaporate the silver of 60 nanometer thickness during Pascal.The effective area of battery is 12 square millimeters, and making structure is the polymer solar battery of ITO/PEDOT:PSS (20nm)/P3HT:PCBM (50nm)/ZnO (50nm)/Ag (60nm).Finish that battery device is made and 110 ℃ of following thermal annealings 5 minutes in glove box.
Comparative Examples I V:
Being solvent with the chlorobenzene, concentration is that 80% P3HT:PCBM mixed solution 60 degree that the quality of 20 mg/ml, PCBM accounts for gross mass added thermal agitation after 3 hours, closes heating and continues to stir 12 hours.
Ito anode layer and glass substrate are formed the ITO electro-conductive glass, and the fine strip shape ITO electro-conductive glass with certain width that etching is good cleans up and dries.Substrate is put into vacuum coating equipment vacuumize, when vacuum degree reaches 4 * 10
-4The W0 of evaporation 20 nanometer thickness during Pascal
3Substrate taken out put on the spin coater carriage of glove box, the speed spin coating P3HT:PCBM mixture that changes with per minute 500 one minute obtains the middle active layer of 150 nanometer thickness.
Vacuum coating equipment is put in the substrate taking-up that scribbles polymer vacuumized, when vacuum degree reaches 4 * 10
-4Evaporate the CsF of 2 nanometer thickness and the silver electrode of 60 nanometer thickness during Pascal.The effective area of battery is 12 square millimeters, and making structure is ITO/WO
3(20nm)/polymer solar battery of P3HT:PCBM (150nm)/CsF (2nm)/Ag (60nm).The battery that making finishes 110 ℃ of thermal annealings 5 minutes in glove box.
Comparative Examples V:
Being solvent with the chlorobenzene, concentration is that 80% P3HT:PCBM mixed solution 60 degree that the quality of 20 mg/ml, PCBM accounts for gross mass added thermal agitation after 3 hours, stops heating and continues to stir 12 hours.
Ito anode layer and glass substrate are formed the ITO electro-conductive glass, and the fine strip shape ITO electro-conductive glass with certain width that etching is good cleans up and dries.Clean ito glass is placed on the carriage of spin coater, by 0.45 micron filtering head PEDOT:PSS solution evenly is coated with completely whole slice, thin piece, rotated one minute with the speed that per minute 1200 changes, make PEDOT:PSS form the film of one deck 100 nanometer thickness on the ITO surface, the baking oven of putting into 120 ℃ heated 30 minutes.
The ito substrate that scribbles PEDOT:PSS that baking is good is transferred in the glove box, treat to be placed on the spin coater carriage after the substrate cooling, the P3HT:PCBM mixed solution that stirs is evenly coated on the ito substrate by filtering head, rotated one minute with the speed that per minute 500 changes, obtain the middle active layer of 150 nanometers.
The substrate that scribbles active layer is taken out in glove box with shifting bottle, be placed on the spin coater carriage, SnO with the absolute ethyl alcohol dilution
2Be coated in uniformly on the P3HT:PCBM by filtering head, rotated one minute, obtain the SnO of 15 nanometer thickness with the speed that per minute 2500 changes
2Layer.To scribble SnO
2The layer substrate transfer to once more in the glove box, in glove box on the hot platform 150 ℃ the heating 10 minutes.
After treating the substrate cooling, put into vacuum coating equipment and vacuumize, when vacuum degree reaches 4 * 10
-4Evaporate the gold of 200 nanometers during Pascal.The effective area of battery is 12 square millimeters, and making structure is ITO/PEDOT:PSS (100nm)/P3HT:PCBM (150nm)/SnO
2(15nm)/polymer solar battery of Au (200nm).Finish that battery device is made and 110 ℃ of following thermal annealings 5 minutes in glove box.
Comparative Examples VI:
Being solvent with the chlorobenzene, concentration is that 40% P3HT:PCBM mixed solution 60 degree that the quality of 10 mg/ml, PCBM accounts for gross mass added thermal agitation after 3 hours, closes heating and continues to stir 12 hours.
Ito anode layer and glass substrate are formed the ITO electro-conductive glass, and the fine strip shape ITO electro-conductive glass with certain width that etching is good cleans up and dries.Substrate is put into vacuum coating equipment vacuumize, when vacuum degree reaches 4 * 10
-4The WO of evaporation 5 nanometer thickness during Pascal
3Substrate taken out put on the spin coater carriage of glove box, the speed spin coating P3HT:PCBM mixture that changes with per minute 1,000 one minute obtains the middle active layer of 50 nanometer thickness.
Vacuum coating equipment is put in the substrate taking-up that scribbles polymer vacuumized, when vacuum degree reaches 4 * 10
-4Evaporate the CaO of 3 nanometer thickness and the calcium aluminium electrode of 200 nanometer thickness during Pascal.The effective area of battery is 12 square millimeters, and making structure is ITO/WO
3(5nm)/polymer solar battery of P3HT:PCBM (50nm)/CaO (3nm)/Ca (50nm)/Al (150nm).The battery that making finishes 110 ℃ of thermal annealings 5 minutes in glove box.
Embodiment 1:
Being solvent with the chlorobenzene, concentration is that 44% P3HT:PCBM mixed solution 60 degree that the quality of 18 mg/ml, PCBM accounts for gross mass added thermal agitation after 3 hours, stops heating and continues to stir 12 hours.
The ito substrate that scribbles PEDOT:PSS that baking is good is transferred in the glove box, treat to be placed on the spin coater carriage after the substrate cooling, the P3HT:PCBM mixed solution that stirs is evenly coated on the ito substrate by filtering head, rotated one minute with the speed that per minute 800 changes, obtain the ground floor active layer 4 of 100 nanometer thickness.
The substrate that scribbles active layer is taken out in glove box with shifting bottle, be placed on the spin coater carriage, TiO with the absolute ethyl alcohol dilution
xBe coated in uniformly on the P3HT:PCBM by filtering head, rotated one minute, obtain the TiO of 10 nanometer thickness with the speed that per minute 3000 changes
xLayer is as electron transfer layer 5.To be coated with TiO
xThe layer substrate transfer to once more in the glove box, in glove box on the hot platform 150 ℃ the heating 10 minutes.
After treating the substrate cooling, put into vacuum coating equipment and vacuumize, when vacuum degree reaches 4 * 10
-4The aluminium that evaporates 2 nanometer thickness during Pascal evaporates the MoO of 10 nanometer thickness then as metal level 6
3As hole transmission layer 7.Put on the spin coater carriage of glove box after will device taking out, the speed spin coating P3HT:PCBM mixture that changes with per minute 800 one minute obtains the second layer active layer 8 of 100 nanometer thickness.
At last device is put into vacuum coating equipment and vacuumize, when vacuum degree reaches 4 * 10
-4The aluminium electrode that evaporates the LiF of 1 nanometer thickness and 100 nanometer thickness during Pascal is respectively as cathodic modification layer 9 and cathode layer 10.The effective area of battery is 12 square millimeters, and making structure is ITO/PEDOT:PSS (40nm)/P3HT:PCBM (100nm)/TiO
x(10nm)/Al (2nm)/MoO
3(10nm)/the polymer stack solar cell of P3HT:PCBM (100nm)/LiF (1nm)/Al (100nm).Device behind the electrode 110 ℃ of high-temperature thermal annealings 5 minutes in glove box have been steamed.
Embodiment 2:
Being solvent with the chlorobenzene, 40% and 80% P3HT:PCBM mixed solution 60 degree that the quality that concentration is respectively 10 mg/ml and 20 mg/ml, PCBM accounts for gross mass respectively added thermal agitation after 3 hours, stopped heating and continued to stir 12 hours.
The ito substrate that scribbles PEDOT:PSS that baking is good is transferred in the glove box, treat to be placed on the spin coater carriage after the substrate cooling, is the solution concentration that stirs that 40% the P3HT:PCBM mixed solution that the quality of 10 mg/ml, PCBM accounts for gross mass is evenly coated on the ito substrate by filtering head, rotated one minute with the speed that per minute 1000 changes, obtain the ground floor active layer 4 of 50 nanometer thickness.
The substrate that scribbles active layer is taken out in glove box with shifting bottle, be placed on the spin coater carriage, ZnO with the absolute ethyl alcohol dilution is coated on the P3HT:PCBM uniformly by filtering head, rotated one minute with the speed that per minute 1500 changes, the ZnO layer that obtains 50 nanometer thickness is as electron transfer layer 5.The substrate that has been coated with the ZnO layer is transferred in the glove box once more, in glove box on the hot platform 150 ℃ the heating 10 minutes.
After treating the substrate cooling, put into vacuum coating equipment and vacuumize, when vacuum degree reaches 4 * 10
-4The silver that evaporates 5 nanometer thickness during Pascal evaporates the WO of 20 nanometer thickness then as metal level 6
3As hole transmission layer 7.To put on the spin coater carriage of glove box after the device taking-up, the speed spin coating solution concentration of changeing with per minute 500 is 80% the P3HT:PCBM mixture one minute that the quality of 20 mg/ml, PCBM accounts for gross mass, obtains the second layer active layer 8 of 150 nanometer thickness.
At last device is put into vacuum coating equipment and vacuumize, when vacuum degree reaches 4 * 10
-4The silver electrode of evaporating the CsF of 2 nanometer thickness and 60 nanometer thickness during Pascal is respectively as cathodic modification layer 9 and cathode layer 10.The effective area of battery is 12 square millimeters, and making structure is ITO/PEDOT:PSS (20nm)/P3HT:PCBM (50nm)/ZnO (50nm)/Ag (5nm)/WO
3(20nm)/the polymer stack solar cell of P3HT:PCBM (150nm)/CsF (2nm)/Ag (60nm).Device behind the electrode 110 ℃ of high-temperature thermal annealings 5 minutes in glove box have been steamed.
Embodiment 3:
Being solvent with the chlorobenzene, 40% and 80% P3HT:PCBM mixed solution 60 degree that the quality that concentration is respectively 10 mg/ml and 20 mg/ml, PCBM accounts for gross mass respectively added thermal agitation after 3 hours, stopped heating and continued to stir 12 hours.
The ito substrate that scribbles PEDOT:PSS that baking is good is transferred in the glove box, treat to be placed on the spin coater carriage after the substrate cooling, is the solution concentration that stirs that 80% the P3HT:PCBM mixed solution that the quality of 20 mg/ml, PCBM accounts for gross mass is evenly coated on the ito substrate by filtering head, rotated one minute with the speed that per minute 500 changes, obtain the ground floor active layer 4 of 150 nanometer thickness.
The substrate that scribbles active layer is taken out in glove box with shifting bottle, be placed on the spin coater carriage, SnO with the absolute ethyl alcohol dilution
2Be coated in uniformly on the P3HT:PCBM by filtering head, rotated one minute, obtain the SnO of 15 nanometer thickness with the speed that per minute 2500 changes
2Layer is as electron transfer layer 5.To be coated with SnO
2The layer substrate transfer to once more in the glove box, in glove box on the hot platform 150 ℃ the heating 10 minutes.
After treating the substrate cooling, put into vacuum coating equipment and vacuumize, when vacuum degree reaches 4 * 10
-4The gold that evaporates 10 nanometer thickness during Pascal evaporates the WO of 5 nanometer thickness then as metal level 6
3As hole transmission layer 7.To put on the spin coater carriage of glove box after the device taking-up, the speed spin coating solution concentration of changeing with per minute 1000 is the P3HT:PCBM mixture one minute that the quality of 20 mg/ml, PCBM accounts for gross mass 40%, obtains the second layer active layer 8 of 50 nanometer thickness.
At last device is put into vacuum coating equipment and vacuumize, when vacuum degree reaches 4 * 10
-4The aluminium electrode of calcium 150 nanometers that evaporates the CaO of 3 nanometer thickness and 50 nanometer thickness during Pascal is respectively as cathodic modification layer 9 and cathode layer 10.The effective area of battery is 12 square millimeters, and making structure is ITO/PEDOT:PSS (100nm)/P3HT:PCBM (150nm)/SnO
2(15nm)/Au (10nm)/WO
3(5nm)/the polymer stack solar cell of P3HT:PCBM (50nm)/CaO (3nm)/Ca (50nm)/Al (150nm).Device behind the electrode 110 ℃ of high-temperature thermal annealings 5 minutes in glove box have been steamed.
Embodiment 4:
Being solvent with the chlorobenzene, 44% and 80% P3HT:PCBM mixed solution 60 degree that the quality that concentration is respectively 18 mg/ml and 20 mg/ml, PCBM accounts for gross mass respectively added thermal agitation after 3 hours, stopped heating and continued to stir 12 hours.
The ito substrate that scribbles PEDOT:PSS that baking is good is transferred in the glove box, treat to be placed on the spin coater carriage after the substrate cooling, is the solution concentration that stirs that 44% the P3HT:PCBM mixed solution that the quality of 18 mg/ml, PCBM accounts for gross mass is evenly coated on the ito substrate by filtering head, rotated one minute with the speed that per minute 800 changes, obtain the ground floor active layer 4 of 100 nanometer thickness.
The substrate that scribbles active layer is taken out in glove box with shifting bottle, be placed on the spin coater carriage, TiO with the absolute ethyl alcohol dilution
xBe coated in uniformly on the P3HT:PCBM by filtering head, rotated one minute, obtain the TiO of 10 nanometer thickness with the speed that per minute 3000 changes
xLayer is as electron transfer layer 5.To be coated with TiO
xThe layer substrate transfer to once more in the glove box, in glove box on the hot platform 150 ℃ the heating 10 minutes.
After treating the substrate cooling, put into vacuum coating equipment and vacuumize, when vacuum degree reaches 4 * 10
-4The aluminium that evaporates 2 nanometer thickness during Pascal evaporates the WO of 20 nanometer thickness then as metal level 6
3As hole transmission layer 7.To put on the spin coater carriage of glove box after the device taking-up, the speed spin coating solution concentration of changeing with per minute 500 is 80% the P3HT:PCBM mixture one minute that the quality of 20 mg/ml, PCBM accounts for gross mass, obtains the second layer active layer 8 of 150 nanometer thickness.
At last device is put into vacuum coating equipment and vacuumize, when vacuum degree reaches 4 * 10
-4The silver electrode of evaporating the CsF of 2 nanometer thickness and 60 nanometer thickness during Pascal is respectively as cathodic modification layer 9 and cathode layer 10.The effective area of battery is 12 square millimeters, and making structure is ITO/PEDOT:PSS (40nm)/P3HT:PCBM (100nm)/TiO
x(10nm)/Al (2nm)/WO
3(20nm)/the polymer stack solar cell of P3HT:PCBM (150nm)/CsF (2nm)/Ag (60nm).Device behind the electrode 110 ℃ of high-temperature thermal annealings 5 minutes in glove box have been steamed.
Embodiment 5:
Being solvent with the chlorobenzene, 44% and 40% P3HT:PCBM mixed solution 60 degree that the quality that concentration is respectively 18 mg/ml and 10 mg/ml, PCBM accounts for gross mass respectively added thermal agitation after 3 hours, stopped heating and continued to stir 12 hours.
The ito substrate that scribbles PEDOT:PSS that baking is good is transferred in the glove box, treat to be placed on the spin coater carriage after the substrate cooling, is the solution concentration that stirs that 44% the P3HT:PCBM mixed solution that the quality of 18 mg/ml, PCBM accounts for gross mass is evenly coated on the ito substrate by filtering head, rotated one minute with the speed that per minute 800 changes, obtain the ground floor active layer 4 of 100 nanometer thickness.
The substrate that scribbles active layer is taken out in glove box with shifting bottle, be placed on the spin coater carriage, TiO with the absolute ethyl alcohol dilution
xBe coated in uniformly on the P3HT:PCBM by filtering head, rotated one minute, obtain the TiO of 10 nanometer thickness with the speed that per minute 3000 changes
xLayer is as electron transfer layer 5.To be coated with TiO
xThe layer substrate transfer to once more in the glove box, in glove box on the hot platform 150 ℃ the heating 10 minutes.
After treating the substrate cooling, put into vacuum coating equipment and vacuumize, when vacuum degree reaches 4 * 10
-4The aluminium that evaporates 2 nanometer thickness during Pascal evaporates the WO of 5 nanometer thickness then as metal level 6
3As hole transmission layer 7.To put on the spin coater carriage of glove box after the device taking-up, the speed spin coating solution concentration of changeing with per minute 1500 is 40% the P3HT:PCBM mixture one minute that the quality of 10 mg/ml, PCBM accounts for gross mass, obtains the second layer active layer 8 of 50 nanometer thickness.
At last device is put into vacuum coating equipment and vacuumize, when vacuum degree reaches 4 * 10
-4The aluminium electrode of calcium 150 nanometers that evaporates the CaO of 3 nanometer thickness and 50 nanometer thickness during Pascal is respectively as cathodic modification layer 9 and cathode layer 10.The effective area of battery is 12 square millimeters, and making structure is ITO/PEDOT:PSS (40nm)/P3HT:PCBM (100nm)/TiO
x(10nm)/Al (2nm)/WO
3(5nm)/the polymer stack solar cell of P3HT:PCBM (50nm)/CaO (3nm)/Ca (50nm)/Al (150nm).Device behind the electrode 110 ℃ of high-temperature thermal annealings 5 minutes in glove box have been steamed.
Embodiment 6:
Being solvent with the chlorobenzene, 40% and 44% P3HT:PCBM mixed solution 60 degree that the quality that concentration is respectively 10 mg/ml and 18 mg/ml, PCBM accounts for gross mass respectively added thermal agitation after 3 hours, stopped heating and continued to stir 12 hours.
The ito substrate that scribbles PEDOT:PSS that baking is good is transferred in the glove box, treat to be placed on the spin coater carriage after the substrate cooling, is the solution concentration that stirs that 40% the P3HT:PCBM mixed solution that the quality of 10 mg/ml, PCBM accounts for gross mass is evenly coated on the ito substrate by filtering head, rotated one minute with the speed that per minute 1000 changes, obtain the ground floor active layer 4 of 50 nanometer thickness.
The substrate that scribbles active layer is taken out in glove box with shifting bottle, be placed on the spin coater carriage, ZnO with the absolute ethyl alcohol dilution is coated on the P3HT:PCBM uniformly by filtering head, rotated one minute with the speed that per minute 1500 changes, the ZnO layer that obtains 50 nanometer thickness is as electron transfer layer 5.The substrate that has been coated with the ZnO layer is transferred in the glove box once more, in glove box on the hot platform 150 ℃ the heating 10 minutes.
After treating the substrate cooling, put into vacuum coating equipment and vacuumize, when vacuum degree reaches 4 * 10
-4The silver that evaporates 5 nanometer thickness during Pascal evaporates the MoO of 10 nanometer thickness then as metal level 6
3As hole transmission layer 7.To put on the spin coater carriage of glove box after the device taking-up, the speed spin coating solution concentration of changeing with per minute 800 is 44% the P3HT:PCBM mixture one minute that the quality of 18 mg/ml, PCBM accounts for gross mass, obtains the second layer active layer 8 of 100 nanometer thickness.
At last device is put into vacuum coating equipment and vacuumize, when vacuum degree reaches 4 * 10
-4The aluminium electrode that evaporates the LiF of 1 nanometer thickness and 100 nanometer thickness during Pascal is respectively as cathodic modification layer 9 and cathode layer 10.The effective area of battery is 12 square millimeters, and making structure is ITO/PEDOT:PSS (20nm)/P3HT:PCBM (50nm)/ZnO (50nm)/Ag (5nm)/MoO
3(10nm)/the polymer stack solar cell of P3HT:PCBM (100nm)/LiF (1nm)/Al (100nm).Device behind the electrode 110 ℃ of high-temperature thermal annealings 5 minutes in glove box have been steamed.
Embodiment 7:
Being solvent with the chlorobenzene, concentration is that 40% P3HT:PCBM mixed solution 60 degree that the quality of 10 mg/ml, PCBM accounts for gross mass added thermal agitation after 3 hours, stops heating and continues to stir 12 hours.
The ito substrate that scribbles PEDOT:PSS that baking is good is transferred in the glove box, treat to be placed on the spin coater carriage after the substrate cooling, the P3HT:PCBM mixed solution that stirs is evenly coated on the ito substrate by filtering head, rotated one minute with the speed that per minute 1000 changes, obtain the ground floor active layer 4 of 50 nanometer thickness.
The substrate that scribbles active layer is taken out in glove box with shifting bottle, be placed on the spin coater carriage, ZnO with the absolute ethyl alcohol dilution is coated on the P3HT:PCBM uniformly by filtering head, rotated one minute with the speed that per minute 1500 changes, the ZnO layer that obtains 50 nanometer thickness is as electron transfer layer 5.The substrate that has been coated with the ZnO layer is transferred in the glove box once more, in glove box on the hot platform 150 ℃ the heating 10 minutes.
After treating the substrate cooling, put into vacuum coating equipment and vacuumize, when vacuum degree reaches 4 * 10
-4The silver that evaporates 5 nanometer thickness during Pascal evaporates the WO of 5 nanometer thickness then as metal level 6
3As hole transmission layer 7.Put on the spin coater carriage of glove box after will device taking out, the speed spin coating P3HT:PCBM mixture that changes with per minute 1,000 one minute obtains the second layer active layer 8 of 50 nanometer thickness.
At last device is put into vacuum coating equipment and vacuumize, when vacuum degree reaches 4 * 10
-4The aluminium electrode of calcium 150 nanometers that evaporates the CaO of 3 nanometer thickness and 50 nanometer thickness during Pascal is respectively as cathodic modification layer 9 and cathode layer 10.The effective area of battery is 12 square millimeters, and making structure is ITO/PEDOT:PSS (20nm)/P3HT:PCBM (50nm)/ZnO (50nm)/Ag (5nm)/WO
3(5nm)/the polymer stack solar cell of P3HT:PCBM (50nm)/CaO (3nm)/Ca (50nm)/Al (150nm).Device behind the electrode 110 ℃ of high-temperature thermal annealings 5 minutes in glove box have been steamed.
Embodiment 8:
Being solvent with the chlorobenzene, 80% and 44% P3HT:PCBM mixed solution 60 degree that the quality that concentration is respectively 20 mg/ml and 18 mg/ml, PCBM accounts for gross mass respectively added thermal agitation after 3 hours, stopped heating and continued to stir 12 hours.
The ito substrate that scribbles PEDOT:PSS that baking is good is transferred in the glove box, treat to be placed on the spin coater carriage after the substrate cooling, is the solution concentration that stirs that 80% the P3HT:PCBM mixed solution that the quality of 20 mg/ml, PCBM accounts for gross mass is evenly coated on the ito substrate by filtering head, rotated one minute with the speed that per minute 500 changes, obtain the ground floor active layer 4 of 150 nanometer thickness.
The substrate that scribbles active layer is taken out in glove box with shifting bottle, be placed on the spin coater carriage, SnO with the absolute ethyl alcohol dilution
2Be coated in uniformly on the P3HT:PCBM by filtering head, rotated one minute, obtain the SnO of 15 nanometer thickness with the speed that per minute 2500 changes
2Layer is as electron transfer layer 5.To be coated with SnO
2The layer substrate transfer to once more in the glove box, in glove box on the hot platform 150 ℃ the heating 10 minutes.
After treating the substrate cooling, put into vacuum coating equipment and vacuumize, when vacuum degree reaches 4 * 10
-4The gold that evaporates 10 nanometer thickness during Pascal evaporates the MoO of 10 nanometer thickness then as metal level 6
3As hole transmission layer 7.To put on the spin coater carriage of glove box after the device taking-up, the speed spin coating solution concentration of changeing with per minute 800 is 44% the P3HT:PCBM mixture one minute that the quality of 18 mg/ml, PCBM accounts for gross mass, obtains the second layer active layer 8 of 100 nanometer thickness.
At last device is put into vacuum coating equipment and vacuumize, when vacuum degree reaches 4 * 10
-4The aluminium electrode that evaporates the LiF of 1 nanometer thickness and 100 nanometer thickness during Pascal is respectively as cathodic modification layer 9 and cathode layer 10.The effective area of battery is 12 square millimeters, and making structure is ITO/PEDOT:PSS (100nm)/P3HT:PCBM (150nm)/SnO
2(15nm)/Au (10nm)/MoO
3(10nm)/the polymer stack solar cell of P3HT:PCBM (100nm)/LiF (1nm)/Al (100nm).Device behind the electrode 110 ℃ of high-temperature thermal annealings 5 minutes in glove box have been steamed.
Embodiment 9:
Being solvent with the chlorobenzene, 80% P3HT:PCBM mixed solution 60 degree that the quality of concentration 20 mg/ml, PCBM accounts for gross mass added thermal agitation after 3 hours, stopped heating and continued to stir 12 hours.
The ito substrate that scribbles PEDOT:PSS that baking is good is transferred in the glove box, treat to be placed on the spin coater carriage after the substrate cooling, the P3HT:PCBM mixed solution that stirs is evenly coated on the ito substrate by filtering head, rotated one minute with the speed that per minute 500 changes, obtain the ground floor active layer 4 of 150 nanometer thickness.
The substrate that scribbles active layer is taken out in glove box with shifting bottle, be placed on the spin coater carriage, SnO with the absolute ethyl alcohol dilution
2Be coated in uniformly on the P3HT:PCBM by filtering head,
Rotated one minute with the speed that per minute 2500 changes, obtain the SnO of 15 nanometer thickness
2Layer is as electron transfer layer 5.To be coated with SnO
2The layer substrate transfer to once more in the glove box, in glove box on the hot platform 150 ℃ the heating 10 minutes.
After treating the substrate cooling, put into vacuum coating equipment and vacuumize, when vacuum degree reaches 4 * 10
-4The gold that evaporates 10 nanometer thickness during Pascal evaporates the WO of 20 nanometer thickness then as metal level 6
3As hole transmission layer 7.Put on the spin coater carriage of glove box after will device taking out, the speed spin coating P3HT:PCBM mixture that changes with per minute 500 one minute obtains the second layer active layer 8 of 150 nanometer thickness.
At last device is put into vacuum coating equipment and vacuumize, when vacuum degree reaches 4 * 10
-4The silver electrode of evaporating the CsF of 2 nanometer thickness and 60 nanometer thickness during Pascal is respectively as cathodic modification layer 9 and cathode layer 10.The effective area of battery is 12 square millimeters, and making structure is ITO/PEDOT:PSS (100nm)/P3HT:PCBM (150nm)/Sn0
2(15nm)/Au (10nm)/W0
3(20nm)/the polymer stack solar cell of P3HT:PCBM (150nm)/CsF (2nm)/Ag (60nm).Device behind the electrode 110 ℃ of high-temperature thermal annealings 5 minutes in glove box have been steamed.
Table 1
Claims (1)
1. polymer with laminated structure solar cell, it comprises: (1) is substrate, material is glass or plastic layer; (2) be the indium tin oxide anode layer, thickness is 180 nanometers; (3) be the anode modification layer, adopt 3,4-vinyl dioxy thiophene polystyrene doped sulfonic acid, wherein 3,4-vinyl dioxy thiophene is 1 to 6 with the weight ratio of polystyrolsulfon acid, this anode modification layer thickness is the 20-100 nanometer; (4) be first active layer, for conjugate polymer material gathers the 3-hexyl thiophene as electron donor, fullerene derivate [6,6]-2-phenyl C
61-2-butyric acid formicester is as electron acceptor, and wherein, the quality of poly-3-hexyl thiophene accounts for poly-3-hexyl thiophene and [6,6]-2-phenyl C
61The 40-80% of-2-butyric acid formicester gross mass, thickness is the 50-150 nanometer; (8) be second active layer, for gathering the 3-hexyl thiophene as electron donor, fullerene derivate [6,6]-2-phenyl C
61-2-butyric acid formicester is as electron acceptor, blend, [6,6]-2-phenyl C
61The quality of-2-butyric acid formicester accounts for poly-3-hexyl thiophene and [6,6]-2-phenyl C
61The 40-80% of-2-butyric acid first gross mass, thickness is the 50-150 nanometer; (9) be the cathodic modification layer, its material is that LiF, CsF and CaO are at least a, and thickness is the 1-3 nanometer; (10) be cathode layer, its material is that metallic aluminium, silver and calcium are at least a, and thickness is the 60-200 nanometer; Be characterised in that: (5) are electron transfer layers, and its material is n type metal oxide TiO
x, ZnO and SnO
2At least a, thickness is the 10-50 nanometer; (6) be metal level, its material is that metallic aluminium, silver and gold are at least a, and thickness is the 2-10 nanometer; (7) be hole transmission layer, its material is p type metal oxide MoO
3And WO
3At least a, thickness is the 5-20 nanometer; Described electron transfer layer 5, metal level 6 and the hole transmission layer 7 common targets that constitute the polymer stack solar cell.
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