CN102856498A - Parallel type polymer solar cell and preparation method thereof - Google Patents
Parallel type polymer solar cell and preparation method thereof Download PDFInfo
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Abstract
The invention belongs to the field of solar cells, and discloses a parallel type polymer solar cell. The parallel type polymer solar cell comprises an anode substrate, a first hole buffering layer, a first active layer, an n-type doped layer, a second active layer, a second hole buffering layer and an anode layer which are stacked sequentially. The active layers of two cell units can capture sunlight as much as possible, so that large quantities of electrons and holes are formed, a connecting layer for connecting two cells is the n-type doped layer capable of increasing conductivity of the cells, and hole and electron injection efficiency is improved.
Description
Technical field
The present invention relates to area of solar cell, relate in particular to a kind of parallel polymer solar battery and preparation method thereof.
Background technology
Nineteen eighty-two, Weinberger etc. have studied the Photovoltaic Properties of polyacetylene, produced first and had truly solar cell, but photoelectric conversion efficiency at that time is extremely low by (10
-3%).And then, Glenis etc. have made the solar cell of various polythiophenes, and the problem that all faced at that time is extremely low open circuit voltage and photoelectric conversion efficiency.Until 1986, C.W.Tang etc. are incorporated into p-type semiconductor and N-shaped semiconductor in the double-deck device first, and just so that photoelectric current has obtained the raising of very big degree, from then on take this work as milestone, organic polymer solar cell is flourish.
Sariciftci in 1992 etc. find 2-methoxyl group-5-(2-ethyl-own oxygen base)-1, there is quick Photoinduced Electron transfer phenomena in 4-benzene second (MEH-PPV) and the compound system, caused people's very big interest, and in nineteen ninety-five, MEH-PPV and the C such as Yu
60The derivative PCBM of (i.e. 60 carbon atom organic substances) mixes and has prepared organic polymer bulk heterojunction solar cell as active layer.Device is at 20mW/cm
2The monochromatic light irradiation of 430nm is lower, and energy conversion efficiency is 2.9%.This is first body heterojunction solar cell based on polymeric material and the preparation of PCBM acceptor, and has proposed the concept of inierpeneirating network structure in the composite membrane.So far, the application of body heterojunction structure in polymer solar battery obtained rapidly development.This structure also becomes the organic polymer solar cell structure that present people generally adopt.
The operation principle of polymer solar battery mainly is divided into four parts: the formation of (1) optical excitation and exciton; (2) diffusion of exciton; (3) division of exciton; (4) transmission of electric charge and collection.At first, conjugated polymer absorbs photon under the incident light irradiation, electronics transits to lowest unoccupied molecular orbital (LUMO) from polymer highest occupied molecular orbital (HOMO), form exciton, exciton is diffused under the effect of internal electric field to body/acceptor and is separated at the interface electronics and the hole that moves freely, and then electronics transmits and collected by negative electrode in mutually at acceptor, and the hole is then by collecting to the body phase and by anode, thereby the generation photoelectric current, this has just formed an effective photoelectric conversion process.
Present polymer solar battery generally all is the single battery cellular construction, and photoelectric conversion efficiency is not high, and active layer is limited to the absorption of sunlight, can not fundamentally improve device to the utilization of sunlight, has restricted the raising of efficient.
Summary of the invention
The object of the present invention is to provide the high parallel polymer solar battery of a kind of energy conversion rate.
Technical scheme of the present invention is as follows:
A kind of parallel polymer solar battery, this parallel polymer solar battery comprises anode substrate, the first Hole-injecting Buffer Layer for Improvement, the first active layer, N-shaped doped layer, the second active layer, the second Hole-injecting Buffer Layer for Improvement, the anode layer that stacks gradually, and namely the structure of this battery is followed successively by: anode substrate/the first Hole-injecting Buffer Layer for Improvement/first active layer/N-shaped doped layer/the second active layer/second Hole-injecting Buffer Layer for Improvement/anode layer.
Described N-shaped doped layer should be divided into two battery units by parallel polymer solar, be that anode substrate, the first Hole-injecting Buffer Layer for Improvement, the first active layer and N-shaped doped layer consist of and just putting type the first battery unit, and the anode layer in the anode substrate and N-shaped doped layer are respectively as anode and the negative electrode of this first battery unit; N-shaped doped layer, the second active layer, electron buffer layer and anode layer consist of inversion type the second battery unit, and anode layer and N-shaped doped layer are respectively as anode and the negative electrode of this second battery unit; Wherein, namely simultaneously as the negative electrode of the first battery unit and the second battery unit, such the first battery unit and the second battery unit form parallel polymer solar battery by the N-shaped doped layer to the N-shaped doped layer.
In this parallel polymer solar battery, the used material of each functional layer is as follows:
The conductive anode substrate is indium tin oxide glass (ITO), mix indium zinc oxide glass (IZO), fluorine doped tin oxide glass (FTO) or mix the change zinc glass (AZO) of aluminium;
The material of the first Hole-injecting Buffer Layer for Improvement and the second Hole-injecting Buffer Layer for Improvement is the mixture of poly-3,4-ethylenedioxy thiophene (PEDOT) with kayexalate (PSS), i.e. PEDOT:PSS mixture;
The material of the first active layer and the second active layer is poly-3-hexyl thiophene (P3HT), poly-[2-methoxyl group-5-(3,7. dimethyl octyloxy) phenylenevinylene] (MDMO-PPV) or poly-[2-methoxyl group-5-(2 '-vinyl-own oxygen base) is poly-to the styrene support] (MEH-PPV) with [6,6]-phenyl-rear mixture that forms of C61-methyl butyrate (PCBM) mixing, i.e. P3HT:PCBM, MDMO-PPV:PCBM or MEH-PPV:PCBM mixture; Wherein, the mass ratio of P3HT: PCBM is controlled at 1: 1～1: 0.8 scope, the mass ratio of MODO-PPV: PCBM and MEH-PPV: PCBM is controlled at respectively 1: 4～1: 1 scope;
The material of described N-shaped doped layer is the formed dopant mixture of electron injection material doping electron transport material; Wherein,
Electron injection material is lithium fluoride (LiF), lithium carbonate (Li
2CO
3), cesium carbonate (Cs
2CO
3), cesium azide (CsN
3) or cesium fluoride (CsF);
Electron transport material is 2-(4-xenyl)-5-(the 4-tert-butyl group) phenyl-1,3,4-oxadiazole (PBD), 4,7-diphenyl-1,10-phenanthroline (Bphen), 1,2,4-triazole derivative (such as TAZ) or N-aryl benzimidazole (TPBI);
The material of anode layer is aluminium (Al), silver (Ag), gold (Au) or platinum (Pt).
Another object of the present invention is to provide the preparation method of above-mentioned parallel polymer solar battery, its processing step is as follows:
S1, with anode substrate successively at liquid detergent, deionized water, acetone, ethanol, the organic pollution on surface is removed in ultrasonic cleaning in the isopropyl alcohol;
S2, at anode surface spin coating first Hole-injecting Buffer Layer for Improvement of anode substrate, after the drying again the first Hole-injecting Buffer Layer for Improvement surface spin coating the first active layer, then dry the processing;
S3, at the first active layer surface evaporating n type doped layer;
S4, at N-shaped doped layer surface spin coating the second active layer, the dry processing then; Then two active layers surface spin coating the second Hole-injecting Buffer Layer for Improvement, then dry the processing;
S5, at the second Hole-injecting Buffer Layer for Improvement surface evaporation anode layer, make at last parallel polymer solar battery.
Among above-mentioned preparation method's the step S1, also comprise the steps:
With anode substrate successively at liquid detergent, deionized water, acetone, ethanol, ultrasonic cleaning in the isopropyl alcohol.
Parallel polymer solar battery of the present invention, the active layer of two battery units can be caught more sunlight as much as possible, thereby produce more electronics and hole, and the articulamentum that connects two batteries is the conductivity that the n doped layer can improve battery, and the injection efficiency of hole and electronics is improved.
Description of drawings
Fig. 1 is the parallel polymer solar battery structural representation of the present invention;
Fig. 2 is preparation technology's flow chart of the parallel polymer solar battery of the present invention;
Fig. 3 is the parallel polymer solar battery of embodiment 1: ITO substrate/PEDOT:PSS/P3HT:PCBM/CsN
3: Bphen/P3HT:PCBM/PEDOT:PSS/Al and Comparative Examples battery: the current density of ITO substrate/PEDOT:PSS/P3HT:PCBM/LiF/Al and voltage relationship figure; Wherein, curve 1 is the curve of embodiment 1, and curve 2 is the curve of Comparative Examples.
Embodiment
A kind of parallel polymer solar battery provided by the invention, as shown in Figure 1, this parallel polymer solar battery is layer structure, and this layer structure comprises successively: anode substrate 11, the first Hole-injecting Buffer Layer for Improvement 12, the first active layer 13, N-shaped doped layer 14, the second active layer 15, the second Hole-injecting Buffer Layer for Improvement 16, anode layer 17, namely the structure of this battery is: anode substrate 11/ first Hole-injecting Buffer Layer for Improvement 12/ first active layer 13/n type doped layer 14/ second active layer 15/ second Hole-injecting Buffer Layer for Improvement 16/ anode layer 17.
Described N-shaped doped layer 14 should be divided into two battery units by parallel polymer solar battery, be that anode substrate 11, the first Hole-injecting Buffer Layer for Improvement 12, the first active layer 13 and N-shaped doped layer 14 consist of and just putting type the first battery unit, and the anode layer of anode substrate 11 and N-shaped doped layer 14 are respectively as anode and the negative electrode of this first battery unit; N-shaped doped layer 14, the second active layer 15, electron buffer layer 16 and anode layer 17 consist of inversion types the second battery unit, and anode layer 17 and N-shaped doped layer 14 are respectively as anode and the negative electrode of this second battery unit; Wherein, namely simultaneously as the negative electrode of the first battery unit and the second battery unit, such the first battery unit and the second battery unit form parallel polymer solar battery by N-shaped doped layer 14 to N-shaped doped layer 14.
In this parallel polymer solar battery, the used material of each functional layer is as follows:
The conductive anode substrate is indium tin oxide glass (ITO), mix indium zinc oxide glass (IZO), fluorine doped tin oxide glass (FTO) or Al-Doped ZnO glass (AZO);
The material of the first Hole-injecting Buffer Layer for Improvement and the second Hole-injecting Buffer Layer for Improvement is respectively the mixture of poly-3,4-ethylenedioxy thiophene (PEDOT) and kayexalate (PSS), i.e. PEDOT:PSS mixture;
The material of the first active layer and the second active layer is poly-3-hexyl thiophene (P3HT), poly-[2-methoxyl group-5-(3,7. dimethyl octyloxy) phenylenevinylene] (MDMO-PPV) or poly-[2-methoxyl group-5-(2 '-vinyl-own oxygen base) is poly-to the styrene support] form mixture after (MEH-PPV) mixing with [6,6]-phenyl-C61-methyl butyrate (PCBM); Be P3HT:PCBM, MDMO-PPV:PCBM or MEH-PPV:PCBM mixture; Wherein, the mass ratio of P3HT: PCBM is controlled at 1: 1～1: 0.8 scope, the mass ratio of MODO-PPV: PCBM and MEH-PPV: PCBM is controlled at respectively 1: 4～1: 1 scope;
The material of described N-shaped doped layer is the formed dopant mixture of electron injection material doping electron transport material, and electron transport material is main body, electron injection material is object (being dopant material), and the doping of guest materials is than being 10-60wt% (mass percent, lower same); Wherein,
Electron injection material is lithium fluoride (LiF), lithium carbonate (Li
2CO
3), cesium carbonate (Cs
2CO
3), cesium azide (CsN
3) or cesium fluoride (CsF);
Electron transport material is 2-(4-xenyl)-5-(the 4-tert-butyl group) phenyl-1,3,4-oxadiazole (PBD), 4,7-diphenyl-1,10-phenanthroline (Bphen), 1,2,4-triazole derivative (such as TAZ) or N-aryl benzimidazole (TPBI);
The material of anode layer is metal material, as, aluminium (Al), silver (Ag), gold (Au) or platinum (Pt) are preferably Al; The thickness of this anode layer is 20～250nm, and preferred thickness is 150nm.
The preparation method of above-mentioned parallel polymer solar battery, as shown in Figure 2, its processing step is as follows:
S1, with anode substrate successively at liquid detergent, deionized water, acetone, ethanol, the organic pollution on surface is removed in ultrasonic cleaning in the isopropyl alcohol; Under power 10～50W, it is carried out oxygen plasma treatment 5～15min after cleaning up, or UV-ozone treatment 5～20min;
S2, being the first Hole-injecting Buffer Layer for Improvement of 20～80nm at the anode layer of anode substrate surface spin coating thickness, is the first active layer of 80～300nm at the first Hole-injecting Buffer Layer for Improvement surface spin coating thickness again after the drying, then dry the processing;
S3, evaporation thickness is the N-shaped doped layer of 10～150nm on the first active layer surface;
S4, be coated with the second active layer that thickness is 80～300nm on N-shaped doped layer surface, then dry the processing; Then at the second Hole-injecting Buffer Layer for Improvement of two active layers surface spin coating thickness, 20～80nm, then drying is processed;
S5, evaporation thickness is the anode layer of 20～250nm on the second Hole-injecting Buffer Layer for Improvement surface, makes at last parallel polymer solar battery.
Among above-mentioned preparation method's the step S2 and S5, the first Hole-injecting Buffer Layer for Improvement and the second Hole-injecting Buffer Layer for Improvement employing mass ratio are 6: 1 PEDOT: the aqueous solution of PSS, the mass percent of PEDOT: PSS is 1.5wt%, after the first Hole-injecting Buffer Layer for Improvement, the second Hole-injecting Buffer Layer for Improvement spin coating finish, bake drying, THICKNESS CONTROL is at 20～80nm; Preferred Hole-injecting Buffer Layer for Improvement thickness is 40nm.
Among above-mentioned preparation method's the step S2 and S4, the material of the first active layer and the second active layer is solution system, its solvent is one or both mixed solvents in toluene, dimethylbenzene, chlorobenzene or the chloroform, and solute is P3HT:PCBM, MDMO-PPV:PCBM or MEH-PPV:PCBM.The total concentration of every kind of system is controlled at 8-30mg/ml, and the mass ratio of P3HT: PCBM is controlled at 1: 1～and 1: 0.8 scope; The mass ratio of MDMO-PPV: PCBM and MEH-PPV: PCBM is controlled at 1: 4～1: 1 scope; Then carry out spin coating in being full of the glove box of inert gas, at 50～200 ℃ of lower annealing 10～100min, perhaps at room temperature placing 24～48h at last, THICKNESS CONTROL is at 80～300nm; Preferred total concentration is the P3HT:PCBM chlorobenzene solution system of 15mg/ml, and the mass ratio of preferred P3HT: PCBM is 1: 0.8, is preferably 120 ℃ of lower annealing 10min, and preferred active layer thickness is 200nm.
Parallel polymer solar battery of the present invention, the active layer of two battery units can be caught more sunlight as much as possible, thereby produce more electronics and hole, and the articulamentum that connects two batteries is the conductivity that the n doped layer can improve battery, and the injection efficiency of hole and electronics is improved.
The below is described in further detail preferred embodiment of the present invention.
Embodiment 1
The structure of parallel polymer solar battery is in the present embodiment: ITO substrate/PEDOT:PSS/P3HT:PCBM/CsN
3: Bphen/P3HT:PCBM/PEDOT:PSS/Al.
The preparation technology of this parallel polymer solar battery is as follows:
1, with the ITO substrate (wherein, ITO is anode layer) use successively liquid detergent, deionized water, acetone, ethanol, isopropyl alcohol clean, and each ultrasonic 15min when cleaning, remove the organic pollution of glass surface, cleaning up rear ITO layer to the ITO substrate is oxygen plasma surface treatment 15min under the 10W condition in power;
2, (wherein, PEDOT: the PSS mass ratio is 6: 1 with the PEDOT:PSS aqueous solution; The gross mass percentage of PEDOT and PSS is 1.5wt%) mode by spin coating prepares on the ITO of ITO substrate layer surface; Bake drying, making thickness is the first Hole-injecting Buffer Layer for Improvement of 40nm;
3, P3HT:PCBM chlorobenzene solution system is spin-coated on the first Hole-injecting Buffer Layer for Improvement surface, after spin coating was complete, at 120 ℃ of lower annealing 10min, making thickness was the first active layer of 200nm; Wherein, in P3HT:PCBM chlorobenzene solution system, solvent is chlorobenzene, and the total concentration of P3HT and PCBM is 14mg/ml, and the mass ratio of P3HT: PCBM is 1: 0.8;
4, be the N-shaped doped layer of 50nm at the first active layer surface evaporation thickness, material is CsN
3: Bphen, and Bphen is material of main part, CsN
3Be dopant material, and doping ratio is 20wt%;
5, spin coating the second active layer again on N-shaped doped layer surface: be about to P3HT:PCBM chlorobenzene solution system and be spin-coated on N-shaped doped layer surface, after spin coating was complete, at 120 ℃ of lower annealing 10min, making thickness was the second active layer of 200nm; Wherein, in the P3HT:PCBM chlorobenzene solution system, solvent is chlorobenzene, and the total concentration of P3HT and PCBM is 15mg/ml, and the mass ratio of P3HT: PCBM is 1: 0.8;
6, (wherein, PEDOT: the PSS mass ratio is 6: 1 with the PEDOT:PSS aqueous solution; The gross mass percentage of PEDOT and PSS is 1.5wt%) mode by spin coating prepares on N-shaped doped layer surface; The spin coating post-drying, making thickness is the second Hole-injecting Buffer Layer for Improvement of 40nm;
7, at the second Hole-injecting Buffer Layer for Improvement surface evaporation anode layer, material is Al, and thickness is 150nm;
8, after above-mentioned preparation technology finishes, obtain required parallel polymer solar battery.
Accompanying drawing 3 is that (structure is the parallel polymer solar battery of the preparation of embodiment 1: ITO substrate/PEDOT:PSS/P3HT:PCBM/CsN
3: Bphen/P3HT:PCBM/PEDOT:PSS/Al) (structure is: current density and the voltage relationship of ITO substrate/PEDOT:PSS/P3HT:PCBM/LiF/Al) with the Comparative Examples battery.
The test of above-mentioned current density and voltage, the model that adopts U.S. Keithly company to generate is that 2602 current-voltage testers carry out, and test technology is: the filter set cooperation with 500W xenon lamp (Osram) and AM 1.5 is the white light source of simulated solar irradiation.
As can see from Figure 3, the current density of Comparative Examples solar cell is 5.11mA/cm
2, and the current density of the solar cell in the present embodiment has been brought up to 7.57mA/cm
2This explanation, the resistance of the solar cell of this parallel-connection structure reduces, make two more effective sunlights that absorbed of active layer, and the efficient that the n doping makes the efficiency of transmission electrode of electronics collect electronics all is improved, finally make the energy conversion efficiency of solar cell obtain enhancing, the energy conversion efficiency of Comparative Examples solar cell only is 1.19%, and the energy conversion efficiency of the present embodiment 1 has brought up to 1.86%.
The table 1 concrete data corresponding with curve 2 that are curve 1; Wherein curve 1 is the curve of embodiment 1, and curve 2 is the curve of Comparative Examples;
Table 1
| Current density (mA cm-2) | Voltage (V) | η(％) | Fill factor, curve factor | |
| Curve 1 | 7.57 | 0.74 | 1.86 | 0.33 |
| |
5.11 | 0.65 | 1.19 | 0.35 |
The structure of parallel polymer solar battery is in the present embodiment: IZO substrate/PEDOT:PSS/P3HT:PCBM/CsF:PBD/MDMO-PPV:PCBM/PEDOT:PSS/Ag.
The preparation technology of this parallel polymer solar battery is as follows:
1, with the IZO substrate (wherein, IZO is anode layer) use successively liquid detergent, deionized water, acetone, ethanol, isopropyl alcohol clean, and each ultrasonic 15min when cleaning, remove the organic pollution of glass surface, cleaning up rear IZO surface to the IZO substrate is oxygen plasma surface treatment 10min under the 30W condition in power;
2, the mode of the PEDOT:PSS aqueous solution by spin coating prepared IZO surface in the IZO substrate; Bake drying, making thickness is the first Hole-injecting Buffer Layer for Improvement of 20nm;
3, P3HT:PCBM toluene solution system is spin-coated on the first Hole-injecting Buffer Layer for Improvement surface, after spin coating was complete, at 200 ℃ of lower annealing 80min, making thickness was the first active layer of 300nm; Wherein, in P3HT:PCBM toluene solution system, solvent is toluene, and the total concentration of P3HT and PCBM is 8mg/ml, and the mass ratio of P3HT: PCBM is 1: 0.8;
4, be the N-shaped doped layer of 150nm at the first active layer surface evaporation thickness, material is CsF:PBD, and PBD is material of main part, and CsF is dopant material, and doping ratio is 60wt%;
5, spin coating the second active layer again on N-shaped doped layer surface: MDMO-PPV:PCBM chloroformic solution system is spin-coated on N-shaped doped layer surface, and after spin coating was complete, at 200 ℃ of lower annealing 5min, making thickness was the second active layer of 300nm; Wherein, in the MDMO-PPV:PCBM chloroformic solution system, solvent is chloroform, and the total concentration of MDMO-PPV and PCBM is 24mg/ml, and the mass ratio of P3HT: PCBM is 1: 4;
6, the mode of the PEDOT:PSS aqueous solution by spin coating prepared on N-shaped doped layer surface; The spin coating post-drying, making thickness is the second Hole-injecting Buffer Layer for Improvement of 20nm;
7, at the second Hole-injecting Buffer Layer for Improvement surface evaporation anode layer, material is Ag, and thickness is 20nm;
8, after above-mentioned preparation technology finishes, obtain required parallel polymer solar battery.
Embodiment 3
The structure of parallel polymer solar battery is in the present embodiment:
FTO substrate/PEDOT:PSS/MDMO-PPV:PCBM/LiF:TPBi/MEH-PPV:PCBM/PEDOT:PSS/ Au.
The preparation technology of this parallel polymer solar battery is as follows:
1, with the FTO substrate (wherein, FTO is anode layer) use successively liquid detergent, deionized water, acetone, ethanol, isopropyl alcohol clean, and each ultrasonic 15min when cleaning, remove the organic pollution of glass surface, cleaning up rear FTO surface to the FTO substrate is oxygen plasma surface treatment 5min under the 50W condition in power;
2, the mode of the PEDOT:PSS aqueous solution by spin coating prepared FTO surface in the FTO substrate; Bake drying, making thickness is the first Hole-injecting Buffer Layer for Improvement of 80nm;
3, MDMO-PPV:PCBM chlorobenzene solution system is spin-coated on the first Hole-injecting Buffer Layer for Improvement surface, after spin coating was complete, at 50 ℃ of lower annealing 100min, making thickness was the first active layer of 120nm; Wherein, in MDMO-PPV:PCBM chlorobenzene solution system, solvent is chlorobenzene, and the total concentration of MDMO-PPV and PCBM is 30mg/ml, and the mass ratio of MDMO-PPV: PCBM is 1: 1;
4, be the N-shaped doped layer of 10nm at the first active layer surface evaporation thickness, material is LiF:TPBi, and TPBi is material of main part, and LiF is dopant material, and doping ratio is 10wt%;
5, spin coating the second active layer again on N-shaped doped layer surface: be about to MEH-PPV:PCBM xylene solution system and be spin-coated on N-shaped doped layer surface, after spin coating was complete, at 180 ℃ of lower annealing 100min, making thickness was the second active layer of 150nm; Wherein, in the MEH-PPV:PCBM xylene solution system, solvent is dimethylbenzene, and the total concentration of MEH-PPV and PCBM is 26mg/ml, and the mass ratio of MEH-PPV: PCBM is 1: 2;
6, the mode of the PEDOT:PSS aqueous solution by spin coating prepared on N-shaped doped layer surface; The spin coating post-drying, making thickness is the second Hole-injecting Buffer Layer for Improvement of 60nm;
7, at the second Hole-injecting Buffer Layer for Improvement surface evaporation anode layer, material is Au, and thickness is 180nm;
8, after above-mentioned preparation technology finishes, obtain required parallel polymer solar battery.
Embodiment 4
The structure of parallel polymer solar battery is in the present embodiment: AZO substrate/PEDOT:PSS/MEH-PPV:PCBM/Li
2CO
3: TAZ/MEH-PPV:PCBM/PEDOT:PSS/Pt.
The preparation technology of this parallel polymer solar battery is as follows:
1, liquid detergent is used in the AZO substrate successively, deionized water, acetone, ethanol, isopropyl alcohol clean, and each ultrasonic 15min when cleaning, and remove the organic pollution of glass surface, clean up rear AZO surface to the AZO substrate in UV-ozone treatment 5min;
2, the mode of the PEDOT:PSS aqueous solution by spin coating prepared AZO surface in the AZO substrate; Bake drying, making thickness is the first Hole-injecting Buffer Layer for Improvement of 70nm, then dry the processing;
3, MEH-PPV:PCBM toluene and xylene solution system are spin-coated on the first Hole-injecting Buffer Layer for Improvement surface, after spin coating is complete, leave standstill 24h under 25 ℃, making thickness is the first active layer of 250nm; Wherein, in MEH-PPV:PCBM toluene and the xylene solution system, solvent is toluene and dimethylbenzene, and the total concentration of MEH-PPV and PCBM is 10mg/ml, and the mass ratio of MEH-PPV:PCBM is 1: 1;
4, be the N-shaped doped layer of 100nm at the first active layer surface evaporation thickness, material is Li
2CO
3: TAZ, and TAZ is material of main part, Li
2CO
3Be dopant material, and doping ratio is 30wt%;
5, spin coating the second active layer again on N-shaped doped layer surface: be about to MEH-PPV:PCBM xylene solution system and be spin-coated on N-shaped doped layer surface, after spin coating was complete, at 200 ℃ of lower annealing 20min, making thickness was the second active layer of 160nm; Wherein, in MEH-PPV:PCBM xylene solution system, solvent is dimethylbenzene, and the total concentration of MEH-PPV and PCBM is 15mg/ml, and the mass ratio of MEH-PPV: PCBM is 1: 3;
6, the mode of the PEDOT:PSS aqueous solution by spin coating prepared on N-shaped doped layer surface; The spin coating post-drying, making thickness is the second Hole-injecting Buffer Layer for Improvement of 30nm;
7, at the second Hole-injecting Buffer Layer for Improvement surface evaporation anode layer, material is Pt, and thickness is 50nm;
8, after above-mentioned preparation technology finishes, obtain required parallel polymer solar battery.
Embodiment 5
The structure of parallel polymer solar battery is in the present embodiment:
ITO substrate/PEDOT:PSS/MDMO-PPV:PCBM/Cs
2CO
3: PBD/MEH-PPV:PCBM/PEDOT:PSS/Al.
The preparation technology of this parallel polymer solar battery is as follows:
1, liquid detergent is used in the ITO substrate successively, deionized water, acetone, ethanol, isopropyl alcohol clean, and each ultrasonic 15min when cleaning, and remove the organic pollution of glass surface, clean up rear ITO layer to the ITO substrate in UV-ozone treatment 20min;
2, the mode of the PEDOT:PSS aqueous solution by spin coating prepared on the ITO of ITO substrate layer surface; Bake drying, making thickness is the first Hole-injecting Buffer Layer for Improvement of 20nm;
3, MDMO-PPV:PCBM chlorobenzene solution system is spin-coated on the first Hole-injecting Buffer Layer for Improvement surface, after spin coating is complete, leaves standstill 48h under 25 ℃, making thickness is the first active layer of 100nm; Wherein, in MDMO-PPV:PCBM chlorobenzene solution system, solvent is chlorobenzene, and the total concentration of MDMO-PPV and PCBM is 8mg/ml, and the mass ratio of MDMO-PPV: PCBM is 1: 3;
4, be the N-shaped doped layer of 80nm at the first active layer surface evaporation thickness, material is Cs
2CO
3: PBD, and PBD is material of main part, Cs
2CO
3Be dopant material, and doping ratio is 50wt%;
5, spin coating the second active layer again on N-shaped doped layer surface: be about to MEH-PPV:PCBM chlorobenzene solution system and be spin-coated on N-shaped doped layer surface, after spin coating was complete, at 70 ℃ of lower annealing 50min, making thickness was the second active layer of 200nm; Wherein, in MEH-PPV:PCBM chlorobenzene solution system, solvent is chlorobenzene, and the total concentration of MEH-PPV and PCBM is 24mg/ml, and the mass ratio of MEH-PPV: PCBM is 1: 4;
6, the mode of the PEDOT:PSS aqueous solution by spin coating prepared on N-shaped doped layer surface; The spin coating post-drying, making thickness is the second Hole-injecting Buffer Layer for Improvement of 30nm;
7, at the second Hole-injecting Buffer Layer for Improvement surface evaporation anode layer, material is Ag, and thickness is 250nm;
8, after above-mentioned preparation technology finishes, obtain required parallel polymer solar battery.
Should be understood that, above-mentioned statement for preferred embodiment of the present invention is comparatively detailed, can not therefore think the restriction to scope of patent protection of the present invention, and scope of patent protection of the present invention should be as the criterion with claims.
Claims (10)
1. parallel polymer solar battery, it is characterized in that, this parallel polymer solar battery comprises anode substrate, the first Hole-injecting Buffer Layer for Improvement, the first active layer, N-shaped doped layer, the second active layer, the second Hole-injecting Buffer Layer for Improvement, the anode layer that stacks gradually.
2. parallel polymer solar battery according to claim 1 is characterized in that, described anode substrate is indium tin oxide glass, mix indium zinc oxide glass, fluorine doped tin oxide glass or Al-Doped ZnO glass.
3. parallel polymer solar battery according to claim 1 is characterized in that, the material of described the first Hole-injecting Buffer Layer for Improvement and the second Hole-injecting Buffer Layer for Improvement is respectively the mixture of poly-3,4-ethylenedioxy thiophene and kayexalate.
4. parallel polymer solar battery according to claim 1, it is characterized in that, the material of described the first active layer and the second active layer is poly-3-hexyl thiophene, poly-[2-methoxyl group-5-(3,7. dimethyl octyloxy) phenylenevinylene] or poly-[2-methoxyl group-5-(2 '-vinyl-own oxygen base) is poly-to the styrene support] mixture of forming after mixing with [6,6]-phenyl-C61-methyl butyrate.
5. parallel polymer solar battery according to claim 4, it is characterized in that, in described poly-3-hexyl thiophene and [6, the 6]-phenyl-formed mixture of C61-methyl butyrate, poly-3-hexyl thiophene is 1: 1～1: 0.8 with the mass ratio of [6,6]-phenyl-C61-methyl butyrate;
Described poly-[2-methoxyl group-5-(3,7. dimethyl octyloxy) phenylenevinylene] with [6,6]-phenyl-formed mixture of C61-methyl butyrate in, poly-[2-methoxyl group-5-(3,7. dimethyl octyloxy) phenylenevinylene] with the mass ratio of [6,6]-phenyl-C61-methyl butyrate be 1: 4～1: 1;
Described gathering [2-methoxyl group-5-(2 '-vinyl-own oxygen base) poly-to the styrene support] with [6,6]-phenyl-formed mixture of C61-methyl butyrate in, poly-[2-methoxyl group-5-(2 '-vinyl-own oxygen base) is poly-to the styrene support] is 1: 4～1: 1 with the mass ratio of [6,6]-phenyl-C61-methyl butyrate.
6. parallel polymer solar battery according to claim 1 is characterized in that, the material of described N-shaped doped layer is the formed dopant mixture of electron injection material doping electron transport material.
7. parallel polymer solar battery according to claim 6, it is characterized in that, described electron transport material is 2-(4-xenyl)-5-(the 4-tert-butyl group) phenyl-1,3,4-oxadiazole, 4,7-diphenyl-1,10-phenanthroline, 1,2,4-triazole derivative or N-aryl benzimidazole;
Described electron injection material is lithium fluoride, lithium carbonate, cesium carbonate, cesium azide or cesium fluoride.
8. parallel polymer solar battery according to claim 1 is characterized in that, the material of described cathode layer is aluminium, silver, gold or platinum.
9. the preparation method of a parallel polymer solar battery as claimed in claim 1 is characterized in that, this preparation method comprises the steps:
S1, antianode substrate surface carry out clean, dry rear for subsequent use;
S2, at the anode layer of anode substrate surface spin coating the first Hole-injecting Buffer Layer for Improvement, again at this Hole-injecting Buffer Layer for Improvement surface spin coating the first active layer, subsequent drying is processed after the drying;
S3, at the first active layer of drying surface evaporating n type doped layer;
S4, at surperficial spin coating second active layer of N-shaped doped layer, subsequent drying is processed; Then the second active layer surface spin coating the second Hole-injecting Buffer Layer for Improvement, then dry the processing;
S5, at the surperficial evaporation anode layer of the second Hole-injecting Buffer Layer for Improvement, make described parallel polymer solar battery.
10. the preparation method of parallel polymer solar battery according to claim 9 is characterized in that, the clean among the described step S1 comprises:
With anode substrate successively at liquid detergent, deionized water, acetone, ethanol, ultrasonic cleaning in the isopropyl alcohol.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104253219A (en) * | 2013-06-27 | 2014-12-31 | 海洋王照明科技股份有限公司 | Solar cell device and method for manufacturing same |
| CN104253175A (en) * | 2013-06-27 | 2014-12-31 | 海洋王照明科技股份有限公司 | Solar cell device and production method thereof |
| CN104253214A (en) * | 2013-06-27 | 2014-12-31 | 海洋王照明科技股份有限公司 | Solar cell device and production method thereof |
| CN104253212A (en) * | 2013-06-27 | 2014-12-31 | 海洋王照明科技股份有限公司 | Solar cell device and method for manufacturing same |
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| CN110931657A (en) * | 2019-12-06 | 2020-03-27 | 中国乐凯集团有限公司 | Flexible composite substrate for perovskite thin-film solar cell and preparation method thereof |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101290973A (en) * | 2008-07-08 | 2008-10-22 | 中国科学院长春应用化学研究所 | Thin-film solar cell of polymer with laminated structure |
| CN101414663A (en) * | 2008-12-04 | 2009-04-22 | 中国科学院长春应用化学研究所 | Stacking polymer thin-film solar cell with parallel connection structure |
| WO2010039009A2 (en) * | 2008-10-01 | 2010-04-08 | 주식회사 엘지화학 | Organic light-emitting diode and method of manufacturing the same |
| KR20110056753A (en) * | 2009-11-23 | 2011-05-31 | 성안기계 (주) | Structure of organic solar cell |
| CN102088060A (en) * | 2010-12-06 | 2011-06-08 | 电子科技大学 | Laminated organic thin-film solar cell and preparation method thereof |
| CN102097592A (en) * | 2010-11-22 | 2011-06-15 | 中山爱科数字科技有限公司 | Laminated composite solar battery |
-
2011
- 2011-06-28 CN CN201110177528.2A patent/CN102856498B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101290973A (en) * | 2008-07-08 | 2008-10-22 | 中国科学院长春应用化学研究所 | Thin-film solar cell of polymer with laminated structure |
| WO2010039009A2 (en) * | 2008-10-01 | 2010-04-08 | 주식회사 엘지화학 | Organic light-emitting diode and method of manufacturing the same |
| CN101414663A (en) * | 2008-12-04 | 2009-04-22 | 中国科学院长春应用化学研究所 | Stacking polymer thin-film solar cell with parallel connection structure |
| KR20110056753A (en) * | 2009-11-23 | 2011-05-31 | 성안기계 (주) | Structure of organic solar cell |
| CN102097592A (en) * | 2010-11-22 | 2011-06-15 | 中山爱科数字科技有限公司 | Laminated composite solar battery |
| CN102088060A (en) * | 2010-12-06 | 2011-06-08 | 电子科技大学 | Laminated organic thin-film solar cell and preparation method thereof |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104253219A (en) * | 2013-06-27 | 2014-12-31 | 海洋王照明科技股份有限公司 | Solar cell device and method for manufacturing same |
| CN104253175A (en) * | 2013-06-27 | 2014-12-31 | 海洋王照明科技股份有限公司 | Solar cell device and production method thereof |
| CN104253214A (en) * | 2013-06-27 | 2014-12-31 | 海洋王照明科技股份有限公司 | Solar cell device and production method thereof |
| CN104253212A (en) * | 2013-06-27 | 2014-12-31 | 海洋王照明科技股份有限公司 | Solar cell device and method for manufacturing same |
| CN108832007A (en) * | 2018-07-04 | 2018-11-16 | 河南师范大学 | A kind of preparation method of perovskite and semi-conductor type silicon hybrid solar cell |
| CN108832007B (en) * | 2018-07-04 | 2021-11-02 | 河南师范大学 | Preparation method of perovskite and semiconductor type silicon hybrid solar cell |
| CN110931657A (en) * | 2019-12-06 | 2020-03-27 | 中国乐凯集团有限公司 | Flexible composite substrate for perovskite thin-film solar cell and preparation method thereof |
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