CN103427034A - Conductive thin film, preparation method and application thereof - Google Patents

Conductive thin film, preparation method and application thereof Download PDF

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Publication number
CN103427034A
CN103427034A CN2012101484065A CN201210148406A CN103427034A CN 103427034 A CN103427034 A CN 103427034A CN 2012101484065 A CN2012101484065 A CN 2012101484065A CN 201210148406 A CN201210148406 A CN 201210148406A CN 103427034 A CN103427034 A CN 103427034A
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layer
ito
cusn
reo
target
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周明杰
王平
陈吉星
张振华
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Oceans King Lighting Science and Technology Co Ltd
Shenzhen Oceans King Lighting Science and Technology Co Ltd
Shenzhen Oceans King Lighting Engineering Co Ltd
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Oceans King Lighting Science and Technology Co Ltd
Shenzhen Oceans King Lighting Engineering Co Ltd
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Abstract

The invention discloses a conductive thin film. The conductive thin film comprises an ITO layer, a CuSn layer and a ReO3 layer, wherein the ITO layer, the CuSn layer and the ReO3 layer are stacked, and ITO represents indium tin oxide. According to the conductive thin film, due to the fact that metal CuSn is deposited on the surface of the ITO layer to be used as a conductive layer, and the high work-function ReO3 layer is deposited on the surface of the metal CuSn layer to prepare the conductive thin film, good conductive performance of the ITO layer can be maintained, and light transmittance enables the work function of the conductive thin film to be significantly improved. The invention further provides a preparation method of the conductive thin film and the application of the conductive thin film.

Description

Conductive film, its preparation method and application
Technical field
The present invention relates to photoelectric semiconductor material, particularly relate to conductive film, its preparation method, use substrate, its preparation method and the organic electroluminescence device of the organic electroluminescence device of this conductive film.
Background technology
The conductive film electrode is the basic component of organic electroluminescence device (OLED), and the quality of its performance directly affects the luminous efficiency of whole device.Wherein, tin indium oxide (ITO) is Recent study transparent conductive film material the most widely, has higher visible light transmittance rate and low resistivity.But improve the luminous efficiency of device, require the transparent conductive film anode to there is higher surface work function.Will under the prerequisite that keeps transparency and conductivity, improve the surface work function of film, need the operation of more complicated, and effect is not clearly, stability is not high.
Summary of the invention
Based on this, be necessary the problem lower for the conductive film work function, conductive film, its preparation method that a kind of work function is higher, the substrate of using the organic electroluminescence device of this conductive film, its preparation method and organic electroluminescence device are provided.
A kind of conductive film, comprise stacked ITO layer, CuSn layer and ReO 3Layer, wherein ITO is tin indium oxide.
A kind of preparation method of conductive film comprises the following steps:
By ITO target, CuSn and ReO 3And pack into the vacuum cavity of magnetic-controlled sputtering coating equipment of substrate, wherein, the vacuum degree of vacuum cavity is 1.0 * 10 -3Pa～1.0 * 10 -6Pa, ITO is tin indium oxide target material;
At described substrate surface sputter ITO layer, the technological parameter of the described ITO layer of sputter is: base target spacing is 35mm～90mm, and sputtering power is 60W～160W, magnetron sputtering operating pressure 0.2Pa～2Pa, the flow of working gas is 10sccm～35sccm, and underlayer temperature is 250 ℃～750 ℃;
At described ITO layer surface sputter CuSn layer, the technological parameter of the described CuSn layer of sputter is: base target spacing is 45mm～95mm, and sputtering power is 30W～100W, magnetron sputtering operating pressure 0.2Pa～4Pa, the flow of working gas is 10sccm～35sccm, and underlayer temperature is 250 ℃～750 ℃;
At described CuSn layer surface sputter ReO 3Layer, the technological parameter of the described CuSn layer of sputter is: base target spacing is 45mm～95mm, sputtering power is 70W～120W, magnetron sputtering operating pressure 0.2Pa～4Pa, the flow of working gas is 10sccm～35sccm, underlayer temperature is 250 ℃～750 ℃; And
Peel off described substrate, obtain described conductive film.
In embodiment, the thickness of ITO layer is 20nm～120nm therein, and the thickness of described CuSn layer is 3nm～20nm, described ReO 3The thickness of layer is 0.5nm～5nm.
In embodiment, described ITO target is obtained by following steps: by SnO therein 2And In 2O 3Powder mixes, wherein SnO 2Mass percent be 1%～15%, surplus is In 2O 3, the powder mixed is made to target at 900 ℃～1350 ℃ lower sintering.
In embodiment, the thickness of described ITO layer is 80nm, described ReO therein 3Target is obtained by following steps: by ReO 3Powder is made target at 700 ℃～1100 ℃ lower sintering.
A kind of substrate of organic electroluminescence device, comprise the substrate, the ITO layer that stack gradually, CuSn layer and ReO 3Layer, wherein, described ITO is tin indium oxide.
A kind of preparation method of substrate of organic electroluminescence device comprises the following steps:
By ITO target, CuSn and ReO 3And pack into the vacuum cavity of magnetic-controlled sputtering coating equipment of substrate, wherein, the vacuum degree of vacuum cavity is 1.0 * 10 -3Pa～1.0 * 10 -6Pa, ITO is tin indium oxide target material;
At described substrate surface sputter ITO layer, the technological parameter of the described ITO layer of sputter is: base target spacing is 35mm～90mm, and sputtering power is 60W～160W, magnetron sputtering operating pressure 0.2Pa～2Pa, the flow of working gas is 10sccm～35sccm, and underlayer temperature is 250 ℃～750 ℃;
At described ITO layer surface sputter CuSn layer, the technological parameter of the described CuSn layer of sputter is: base target spacing is 45mm～95mm, and sputtering power is 30W～100W, magnetron sputtering operating pressure 0.2Pa～4Pa, the flow of working gas is 10sccm～35sccm, and underlayer temperature is 250 ℃～750 ℃;
At described CuSn layer surface sputter ReO 3Layer, the technological parameter of the described CuSn layer of sputter is: base target spacing is 45mm～95mm, sputtering power is 70W～120W, magnetron sputtering operating pressure 0.2Pa～4Pa, the flow of working gas is 10sccm～35sccm, underlayer temperature is 250 ℃～750 ℃.
In embodiment, described ITO target is obtained by following steps: by SnO therein 2And In 2O 3Powder mixes, wherein SnO 2Mass percent be 1%～15%, surplus is In 2O 3, the powder mixed is made to target at 900 ℃～1350 ℃ lower sintering.
In embodiment, the thickness of described ITO layer is 20nm～120nm therein, and the thickness of described CuSn layer is 3nm～20nm, described ReO 3The thickness of layer is 0.5nm～5nm.
A kind of organic electroluminescence device, comprise the anode, luminescent layer and the negative electrode that stack gradually, and described anode comprises stacked ITO layer, CuSn layer and ReO 3Layer, wherein ITO is tin indium oxide.
The surface deposition CuSn that above-mentioned conductive film passes through at the ITO layer is as conductive layer, at the ReO of the high work content of metal CuSn layer surface deposition 3Layer prepares conductive film, the good electric conductivity that can keep the ITO layer, light transmittance makes again the work function of conductive film obtain significant raising, conductive film is at 300～800nm wave-length coverage visible light transmissivity 80%～87%, square resistance scope 10～30 Ω/, surface work function 5.8～6.0eV; The preparation method of above-mentioned conductive film, only use magnetic-controlled sputtering coating equipment to deposit ITO layer, CuSn layer and ReO by continuous production 3Layer, technique is comparatively simple; Use the anode of this conductive film as organic electroluminescence device, between the HOMO energy level of the surface work function of conductive film and general organic luminous layer, gap is less, has reduced the injection barrier of charge carrier, can improve significantly luminous efficiency.
The accompanying drawing explanation
The structural representation of the conductive film that Fig. 1 is an execution mode;
The structural representation of the substrate of the organic electroluminescence device that Fig. 2 is an execution mode;
The structural representation of the organic electroluminescence device that Fig. 3 is an execution mode;
The transmitted spectrum spectrogram of the conductive film that Fig. 4 is embodiment 1 preparation.
Embodiment
Below in conjunction with the drawings and specific embodiments, conductive film, its preparation method, the substrate of using the organic electroluminescence device of this conductive film, its preparation method and organic electroluminescence device are further illustrated.
Refer to Fig. 1, the conductive film 100 of an execution mode comprises stacked ITO layer 10, CuSn layer 20 and ReO 3Layer 30, wherein, described ITO is tin indium oxide.
The thickness of ITO layer 10 is 20nm～120nm, preferably 50nm;
The thickness of CuSn layer 20 is 3nm～20nm, preferably 10nm;
ReO 3The thickness of layer 30 is 0.5nm～5nm, preferably 1.5nm.
Above-mentioned conductive film 100 is by the ReO of the conduction CuSn layer 20 of the surface deposition at ITO layer 10 and high work content 3Layer 30 prepares conductive film, good electric conductivity and the light transmittance that can keep ITO layer 10, make again the work function of conductive film 100 obtain significant raising, conductive film 100 is at 300～800nm wave-length coverage visible light transmissivity 80%～87%, square resistance scope 10～30 Ω/, surface work function 5.8～6.0eV.
The preparation method of above-mentioned conductive film 100 comprises the following steps:
S110, by ITO target, CuSn and ReO 3And pack into the vacuum cavity of magnetic-controlled sputtering coating equipment of substrate, wherein, the vacuum degree of vacuum cavity is 1.0 * 10 -3Pa～1.0 * 10 -6Pa, ITO is tin indium oxide target material.
In present embodiment, described ITO target is obtained by following steps: by SnO 2And In 2O 3Powder mixes, wherein SnO 2Mass percent be 1%～15%, surplus is In 2O 3, the powder mixed is made to target at 900 ℃～1350 ℃ lower sintering.
Substrate is glass substrate.Preferably, substrate is used acetone, absolute ethyl alcohol and deionized water ultrasonic cleaning before use.
In present embodiment, the vacuum degree of vacuum cavity is preferably 5 * 10 -4Pa.
Step S120, at described substrate surface sputter ITO layer 10, the technological parameter of the described ITO layer 10 of sputter is: base target spacing is 35mm～90mm, sputtering power is 60W～160W, magnetron sputtering operating pressure 0.2Pa～2Pa, the flow of working gas is 10sccm～35sccm, and underlayer temperature is 250 ℃～750 ℃.
Preferably, base target spacing is 60mm, and sputtering power is 100W, magnetron sputtering operating pressure 2Pa, and working gas is argon gas, and the flow of working gas is 25sccm, and underlayer temperature is 450 ℃.
The thickness of the ITO layer 10 formed is 20nm～120nm, is preferably 50nm.
Step S130, at the surperficial sputter CuSn of described ITO layer 10 layer, the technological parameter of the described CuSn layer of sputter is: base target spacing is 45mm～95mm, sputtering power is 30W～100W, magnetron sputtering operating pressure 0.2Pa～4Pa, the flow of working gas is 10sccm～35sccm, and underlayer temperature is 250 ℃～750 ℃.
Preferably, base target spacing is 60mm, and sputtering power is 100W, magnetron sputtering operating pressure 2Pa, and working gas is argon gas, and the flow of working gas is 25sccm, and underlayer temperature is 450 ℃.
The thickness of the CuSn layer 20 formed is 3nm～20nm, is preferably 10nm.
Step S140, at the surperficial sputter ReO of described CuSn layer 20 3Layer 30, the technological parameter of the described CuSn layer 20 of sputter is: base target spacing is 45mm～95mm, sputtering power is 70W～120W, magnetron sputtering operating pressure 0.2Pa～4Pa, the flow of working gas is 10sccm～35sccm, underlayer temperature is 250 ℃～750 ℃
Preferably, ReO 3Powder becomes target at 700 ℃ of high temperature sinterings.
Preferably, base target spacing is 60mm, and sputtering power is 100W, magnetron sputtering operating pressure 2Pa, and working gas is argon gas, and the flow of working gas is 25sccm, and underlayer temperature is 450 ℃.
The ReO formed 3The thickness of layer 30 is 0.5nm～5nm, is preferably 1.5nm.
At the bottom of step S150, peeling liner, obtain conductive film 100.
The preparation method of above-mentioned conductive film, only use the magnetic-controlled sputtering coating equipment can continuous production ITO layer 10 and be deposited on the CuSn layer 20 on ITO layer 10 surface, at CuSn layer 20 surface deposition ReO 3Layer 30, technique is comparatively simple.
Refer to Fig. 2, the substrate 200 of the organic electroluminescence device of an execution mode, comprise stacked substrate 201, ITO layer 202, CuSn layer 203 and ReO 3Layer 204, wherein, wherein ITO is tin indium oxide.
Substrate 201 is quartz plate, the hard substrates such as monocrystalline silicon piece and sapphire.The thickness of substrate 201 is 0.1mm～3.0mm, is preferably 1.0mm.
The thickness of ITO layer 202 is 20nm～120nm, preferably 50nm.
The thickness of CuSn layer 203 is 3nm～20nm, preferably 10nm.
ReO 3The thickness of layer 204 is 0.5nm～5nm, preferably 1.5nm.
The substrate 200 of above-mentioned organic electroluminescence device is by the ReO of the conduction CuSn layer 203 of the surface deposition at ITO layer 202 and high work content 3Layer 204 prepares conductive film, the good electric conductivity that can keep ITO layer 202, make again the work function of substrate 200 obtain significant raising, substrate 200 is at 300～800nm wave-length coverage visible light transmissivity 80%～87%, square resistance scope 10～30 Ω/, surface work function 5.8～6.0eV.
The preparation method of the substrate 200 of above-mentioned organic electroluminescence device comprises the following steps:
S210, by ITO target, CuSn and ReO 3And pack into the vacuum cavity of magnetic-controlled sputtering coating equipment of substrate, wherein, the vacuum degree of vacuum cavity is 1.0 * 10 -3Pa～1.0 * 10 -6Pa, ITO is tin indium oxide target material.
In present embodiment, described ITO target is obtained by following steps: by SnO 2And In 2O 3Powder mixes, wherein SnO 2Mass percent be 1%～15%, surplus is In 2O 3, the powder mixed is made to target at 900 ℃～1350 ℃ lower sintering.
Substrate is glass substrate.Preferably, substrate is used acetone, absolute ethyl alcohol and deionized water ultrasonic cleaning before use.
In present embodiment, the vacuum degree of vacuum cavity is preferably 5 * 10 -4Pa.
Step S220, at described substrate surface sputter ITO layer 202, the technological parameter of the described ITO layer 202 of sputter is: base target spacing is 35mm～90mm, sputtering power is 60W～160W, magnetron sputtering operating pressure 0.2Pa～2Pa, the flow of working gas is 10sccm～35sccm, and underlayer temperature is 250 ℃～750 ℃.
Preferably, base target spacing is 60mm, and sputtering power is 100W, magnetron sputtering operating pressure 2Pa, and working gas is argon gas, and the flow of working gas is 25sccm, and underlayer temperature is 450 ℃.
The thickness of the ITO layer 202 formed is 20nm～120nm, is preferably 50nm.
Step S230, at the surperficial sputter CuSn of described ITO layer 202 layer 203, the technological parameter of the described CuSn layer 203 of sputter is: base target spacing is 45mm～95mm, sputtering power is 30W～100W, magnetron sputtering operating pressure 0.2Pa～4Pa, the flow of working gas is 10sccm～35sccm, and underlayer temperature is 250 ℃～750 ℃.
Preferably, base target spacing is 60mm, and sputtering power is 100W, magnetron sputtering operating pressure 2Pa, and working gas is argon gas, and the flow of working gas is 25sccm, and underlayer temperature is 450 ℃.
The thickness of the CuSn layer 203 formed is 3nm～20nm, is preferably 10nm.
Step S240, at the surperficial sputter ReO of described CuSn layer 203 3 Layer 204, the technological parameter of the described CuSn layer 203 of sputter is: base target spacing is 45mm～95mm, sputtering power is 70W～120W, magnetron sputtering operating pressure 0.2Pa～4Pa, the flow of working gas is 10sccm～35sccm, underlayer temperature is 250 ℃～750 ℃
Preferably, ReO 3Powder becomes target at 700 ℃ of high temperature sinterings.
Preferably, base target spacing is 60mm, and sputtering power is 100W, magnetron sputtering operating pressure 2Pa, and working gas is argon gas, and the flow of working gas is 25sccm, and underlayer temperature is 450 ℃.
The ReO formed 3The thickness of layer 204 is 0.5nm～5nm, is preferably 1.5nm.
The preparation method of the substrate 200 of above-mentioned organic electroluminescence device, only use magnetic-controlled sputtering coating equipment to get final product the CuSn layer 203 for preparing continuously ITO layer 202 and be deposited on ITO layer 202 surface on substrate 201, at CuSn layer 203 surface deposition ReO 3Layer 204, technique is comparatively simple.
Refer to Fig. 3, the organic electroluminescence device 300 of an execution mode comprises substrate 301, anode 302, luminescent layer 303 and the negative electrode 304 stacked gradually.Anode 302 is made by conductive film 100, comprises stacked ITO layer 10, CuSn layer 20 and ReO 3Layer 30, wherein, described ITO is tin indium oxide.Substrate 301 is glass substrate, is appreciated that the difference according to organic electroluminescence device 300 concrete structures, and substrate 301 can omit.The material of luminescent layer 303 and negative electrode 304 is Ag, Au, Al, Pt or Mg/Ag alloy.
The thickness of ITO layer 10 is 20nm～120nm, preferably 50nm;
The thickness of CuSn layer 20 is 3nm～20nm, preferably 10nm;
ReO 3The thickness of layer 30 is 0.5nm～5nm, preferably 1.5nm.
Be appreciated that above-mentioned organic electroluminescence device 300 also can arrange other functional layers according to user demand.
Above-mentioned organic electroluminescence device 300, use the anode of conductive film 100 as organic electroluminescence device, surface work function 5.8～the 6.0eV of conductive film, and between the HOMO energy level (being typically 5.7～6.3eV) of general organic luminous layer, gap is less, reduce the injection barrier of charge carrier, can improve luminous efficiency.
It is below specific embodiment.
Embodiment 1
Select the powder that purity is 99.9%, the In that mass percent is 89% 2O 3With the mass percent SnO that is 11% 2After even mixing, sintering diameter under 1200 ℃ into is 60mm, the ITO ceramic target that thickness is 2mm, ReO 3Powder becomes target at 1000 ℃ of high temperature sinterings, and the ITO ceramic target is packed in vacuum cavity.Then, successively use acetone, absolute ethyl alcohol and deionized water ultrasonic cleaning glass substrate, put into vacuum cavity.The distance of target and substrate is set as to 50mm.With mechanical pump and molecular pump, the vacuum degree of cavity is extracted into to 6.0 * 10 -4Pa, the working gas flow of argon gas is 20sccm, and pressure is adjusted to 1.0Pa, and underlayer temperature is 450 ℃, and the sputtering power of ito thin film is 100W, after obtaining ito thin film, ITO ceramic target, ReO 3Target and CuSn target are put into evaporated device, with mechanical pump and molecular pump, the vacuum degree of cavity are evacuated to 2.0 * 10 -4Pa, successively evaporation CuSn film and ReO on ito thin film 3Film, the sputtering power 60W of CuSn film, ReO 3The sputtering power 90W of film.The thickness of ito thin film is 50nm, and the thickness of CuSn film is 10nm, ReO 3The thickness of film is 3nm, obtains ITO-CuSn-ReO 3Transparent conductive film, square resistance scope 10 Ω/, surface work function 6.0eV, the visible ray mean transmissivity is 87%.
Refer to Fig. 4, Figure 4 shows that the transmitted spectrum of the transparent conductive film obtained, use the ultraviolet-uisible spectrophotometer test, test wavelength is 300～800nm.Film has reached 86% at visible ray 470～790nm wave-length coverage mean transmissivity as seen from Figure 4.
Embodiment 2
Select the powder that purity is 99.9%, the In that mass percent is 99% 2O 3With the mass percent SnO that is 1% 2After even mixing, sintering diameter under 1000 ℃ into is 60mm, the ITO ceramic target that thickness is 2mm, ReO 3Powder becomes target at 1100 ℃ of high temperature sinterings, and the ITO ceramic target is packed in vacuum cavity.Then, successively use acetone, absolute ethyl alcohol and deionized water ultrasonic cleaning glass substrate, put into vacuum cavity.The distance of target and substrate is set as to 40mm.With mechanical pump and molecular pump, the vacuum degree of cavity is extracted into to 1.0 * 10 -3Pa, the working gas flow of argon gas is 15sccm, and pressure is adjusted to 2.0Pa, and underlayer temperature is 250 ℃, and the sputtering power of ito thin film is 160W, after obtaining ito thin film, ITO ceramic target, ReO 3Target and CuSn target are put into evaporated device, with mechanical pump and molecular pump, the vacuum degree of cavity are evacuated to 1.0 * 10 -6Pa, successively evaporation CuSn film and ReO on ito thin film 3Film, the sputtering power 30W of CuSn film, ReO 3The sputtering power 70W of film.The thickness of ito thin film is 20nm, and the thickness of CuSn film is 20nm, ReO 3The thickness of film is 1nm, obtains ITO-CuSn-ReO 3Transparent conductive film, square resistance scope 16 Ω/, surface work function 5.8eV, the visible ray mean transmissivity is 80%.
Embodiment 3
Select the powder that purity is 99.9%, the In that mass percent is 95% 2O 3With the mass percent SnO that is 5% 2After even mixing, sintering diameter under 1350 ℃ into is 60mm, the ITO ceramic target that thickness is 2mm, ReO 3Powder becomes target at 700 ℃ of high temperature sinterings, and the ITO ceramic target is packed in vacuum cavity.Then, successively use acetone, absolute ethyl alcohol and deionized water ultrasonic cleaning glass substrate, put into vacuum cavity.The distance of target and substrate is set as to 50mm.With mechanical pump and molecular pump, the vacuum degree of cavity is extracted into to 1.0 * 10 -5Pa, the working gas flow of argon gas is 35sccm, and pressure is adjusted to 0.2Pa, and underlayer temperature is 750 ℃, and sputtering power is 160W, after obtaining ito thin film, ITO ceramic target, ReO 3Target and CuSn target are put into evaporated device, with mechanical pump and molecular pump, the vacuum degree of cavity are evacuated to 1.0 * 10 -3Pa, successively evaporation CuSn film and ReO on ito thin film 3Film, the sputtering power 100W of CuSn film, ReO 3The sputtering power 120W of film.The thickness of ito thin film is 120nm, and the thickness of CuSn film is 3nm, ReO 3The thickness of film is 10nm, obtains ITO-CuSn-ReO 3Transparent conductive film, square resistance scope 30 Ω/, surface work function 6.0eV, the visible ray mean transmissivity is 85%.
The above embodiment has only expressed several execution mode of the present invention, and it describes comparatively concrete and detailed, but can not therefore be interpreted as the restriction to the scope of the claims of the present invention.It should be pointed out that for the person of ordinary skill of the art, without departing from the inventive concept of the premise, can also make some distortion and improvement, these all belong to protection scope of the present invention.Therefore, the protection range of patent of the present invention should be as the criterion with claims.

Claims (10)

1. a conductive film, is characterized in that, comprises stacked ITO layer, CuSn layer and ReO 3Layer, wherein ITO is tin indium oxide.
2. the preparation method of a conductive film, is characterized in that, comprises the following steps:
By ITO target, CuSn and ReO 3And pack into the vacuum cavity of magnetic-controlled sputtering coating equipment of substrate, wherein, the vacuum degree of vacuum cavity is 1.0 * 10 -3Pa～1.0 * 10 -6Pa, ITO is tin indium oxide target material;
At described substrate surface sputter ITO layer, the technological parameter of the described ITO layer of sputter is: base target spacing is 35mm～90mm, and sputtering power is 60W～160W, magnetron sputtering operating pressure 0.2Pa～2Pa, the flow of working gas is 10sccm～35sccm, and underlayer temperature is 250 ℃～750 ℃;
At described ITO layer surface sputter CuSn layer, the technological parameter of the described CuSn layer of sputter is: base target spacing is 45mm～95mm, and sputtering power is 30W～100W, magnetron sputtering operating pressure 0.2Pa～4Pa, the flow of working gas is 10sccm～35sccm, and underlayer temperature is 250 ℃～750 ℃;
At described CuSn layer surface sputter ReO 3Layer, the technological parameter of the described CuSn layer of sputter is: base target spacing is 45mm～95mm, sputtering power is 70W～120W, magnetron sputtering operating pressure 0.2Pa～4Pa, the flow of working gas is 10sccm～35sccm, underlayer temperature is 250 ℃～750 ℃; And
Peel off described substrate, obtain described conductive film.
3. the preparation method of conductive film according to claim 2, is characterized in that, the thickness of described ITO layer is 20nm～120nm, and the thickness of described CuSn layer is 3nm～20nm, described ReO 3The thickness of layer is 0.5nm～5nm.
4. the preparation method of conductive film according to claim 2, is characterized in that, described ITO target is obtained by following steps: by SnO 2And In 2O 3Powder mixes, wherein SnO 2Mass percent be 1%～15%, surplus is In 2O 3, the powder mixed is made to target at 900 ℃～1350 ℃ lower sintering.
5. the preparation method of conductive film according to claim 2, is characterized in that, described ReO 3Target is obtained by following steps: by ReO 3Powder is made target at 700 ℃～1100 ℃ lower sintering.
6. the substrate of an organic electroluminescence device, is characterized in that, comprises the substrate, the ITO layer that stack gradually, CuSn layer and ReO 3Layer, wherein, described ITO is tin indium oxide.
7. the preparation method of the substrate of an organic electroluminescence device, is characterized in that, comprises the following steps:
By ITO target, CuSn and ReO 3And pack into the vacuum cavity of magnetic-controlled sputtering coating equipment of substrate, wherein, the vacuum degree of vacuum cavity is 1.0 * 10 -3Pa～1.0 * 10 -6Pa, ITO is tin indium oxide target material;
At described substrate surface sputter ITO layer, the technological parameter of the described ITO layer of sputter is: base target spacing is 35mm～90mm, and sputtering power is 60W～160W, magnetron sputtering operating pressure 0.2Pa～2Pa, the flow of working gas is 10sccm～35sccm, and underlayer temperature is 250 ℃～750 ℃;
At described ITO layer surface sputter CuSn layer, the technological parameter of the described CuSn layer of sputter is: base target spacing is 45mm～95mm, and sputtering power is 30W～100W, magnetron sputtering operating pressure 0.2Pa～4Pa, the flow of working gas is 10sccm～35sccm, and underlayer temperature is 250 ℃～750 ℃;
At described CuSn layer surface sputter ReO 3Layer, the technological parameter of the described CuSn layer of sputter is: base target spacing is 45mm～95mm, sputtering power is 70W～120W, magnetron sputtering operating pressure 0.2Pa～4Pa, the flow of working gas is 10sccm～35sccm, underlayer temperature is 250 ℃～750 ℃.
8. the preparation method of the substrate of organic electroluminescence device according to claim 7, is characterized in that, described ITO target is obtained by following steps: by SnO 2And In 2O 3Powder mixes, wherein SnO 2Mass percent be 1%～15%, surplus is In 2O 3, the powder mixed is made to target at 900 ℃～1350 ℃ lower sintering.
9. the preparation method of the substrate of organic electroluminescence device according to claim 7, is characterized in that, the thickness of described ITO layer is 20nm～120nm, and the thickness of described CuSn layer is 3nm～20nm, described ReO 3The thickness of layer is 0.5nm～5nm.
10. an organic electroluminescence device, comprise the anode, luminescent layer and the negative electrode that stack gradually, it is characterized in that, described anode comprises stacked ITO layer, CuSn layer and ReO 3Layer, wherein ITO is tin indium oxide.
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Application publication date: 20131204