CN101286015A - 改善临界尺寸均匀度的显影方法 - Google Patents
改善临界尺寸均匀度的显影方法 Download PDFInfo
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- CN101286015A CN101286015A CNA200710039422XA CN200710039422A CN101286015A CN 101286015 A CN101286015 A CN 101286015A CN A200710039422X A CNA200710039422X A CN A200710039422XA CN 200710039422 A CN200710039422 A CN 200710039422A CN 101286015 A CN101286015 A CN 101286015A
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Description
No. | 时间(Time) | 速度(Speed) | 加速(Accel) | 配方(Dispense) |
1 | 1 | 0 | 10000 | |
2 | 0.3 | 0 | 10000 | 1 |
3 | 1 | 30 | 10000 | 1 |
4 | 10 | 0 | 10000 | 24 |
5 | 1 | 30 | 10000 | 24 |
6 | 10 | 0 | 10000 | 24 |
7 | 1 | 30 | 10000 | 24 |
8 | 10 | 0 | 10000 | 24 |
9 | 1 | 30 | 10000 | 24 |
10 | 20.7 | 0 | 10000 | 24 |
11 | 5 | 0 | 10000 | |
12 | 5 | 2000 | 5000 | 13 21 |
13 | 10 | 500 | 10000 | 13 21 |
14 | 5 | 500 | 10000 | 13 21 |
15 | 15 | 4000 | 10000 | |
16 | 1 | 0 | 5000 |
No. | 时间(Time) | 速度(Speed) | 加速(Accel) | 配方(Dispense) |
1 | 1 | 0 | 10000 | |
2 | 0.3 | 0 | 10000 | 1 |
3 | 1 | 30 | 10000 | 1 |
4 | 10 | -30 | 10000 | 24 |
5 | 1 | 30 | 10000 | 24 |
6 | 10 | -30 | 10000 | 24 |
7 | 1 | 30 | 10000 | 24 |
8 | 10 | -30 | 10000 | 24 |
9 | 1 | 30 | 10000 | 24 |
10 | 20.7 | 0 | 10000 | 24 |
11 | 5 | 0 | 10000 | |
12 | 5 | 2000 | 5000 | 13 21 |
13 | 10 | 500 | 10000 | 13 21 |
14 | 5 | 500 | 10000 | 13 21 |
15 | 15 | 4000 | 10000 | |
16 | 1 | 0 | 5000 |
Claims (8)
Priority Applications (1)
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CN200710039422XA CN101286015B (zh) | 2007-04-12 | 2007-04-12 | 改善临界尺寸均匀度的显影方法 |
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CN200710039422XA CN101286015B (zh) | 2007-04-12 | 2007-04-12 | 改善临界尺寸均匀度的显影方法 |
Publications (2)
Publication Number | Publication Date |
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CN101286015A true CN101286015A (zh) | 2008-10-15 |
CN101286015B CN101286015B (zh) | 2011-01-19 |
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CN200710039422XA Active CN101286015B (zh) | 2007-04-12 | 2007-04-12 | 改善临界尺寸均匀度的显影方法 |
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CN (1) | CN101286015B (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102043354A (zh) * | 2009-10-23 | 2011-05-04 | 东京毅力科创株式会社 | 显影装置和显影方法 |
CN102540769A (zh) * | 2010-12-15 | 2012-07-04 | 无锡华润上华半导体有限公司 | 显影方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3039467B2 (ja) * | 1997-07-31 | 2000-05-08 | 日本電気株式会社 | レジスト現像方法 |
US6746826B1 (en) * | 2000-07-25 | 2004-06-08 | Asml Holding N.V. | Method for an improved developing process in wafer photolithography |
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2007
- 2007-04-12 CN CN200710039422XA patent/CN101286015B/zh active Active
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102043354A (zh) * | 2009-10-23 | 2011-05-04 | 东京毅力科创株式会社 | 显影装置和显影方法 |
CN102043354B (zh) * | 2009-10-23 | 2013-04-17 | 东京毅力科创株式会社 | 显影装置和显影方法 |
CN102540769A (zh) * | 2010-12-15 | 2012-07-04 | 无锡华润上华半导体有限公司 | 显影方法 |
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Publication number | Publication date |
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CN101286015B (zh) | 2011-01-19 |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HONGLI SEMICONDUCTOR MANUFACTURE CO LTD, SHANGHAI Effective date: 20140514 |
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Effective date of registration: 20140514 Address after: 201203 Shanghai Zhangjiang hi tech park Zuchongzhi Road No. 1399 Patentee after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201203 Shanghai Guo Shou Jing Road, Pudong New Area Zhangjiang hi tech Park No. 818 Patentee before: Hongli Semiconductor Manufacture Co., Ltd., Shanghai |