CN101277579B - Plasma processing device and plasma processing method - Google Patents
Plasma processing device and plasma processing method Download PDFInfo
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- CN101277579B CN101277579B CN2008100878504A CN200810087850A CN101277579B CN 101277579 B CN101277579 B CN 101277579B CN 2008100878504 A CN2008100878504 A CN 2008100878504A CN 200810087850 A CN200810087850 A CN 200810087850A CN 101277579 B CN101277579 B CN 101277579B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
- H01J37/32183—Matching circuits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
- H01J37/32495—Means for protecting the vessel against plasma
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32559—Protection means, e.g. coatings
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- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
- H05H1/4645—Radiofrequency discharges
- H05H1/4652—Radiofrequency discharges using inductive coupling means, e.g. coils
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
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- H05H2242/20—Power circuits
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Abstract
The present invention provides a plasma processing device and a plasma processing method. In the plasma processing device disposed with an impedance regulating part between the anode electrode and the processing capacitor, the impedance of the impedance regulating part can be regulated easily and properly, to inhibit abnormal discharge. The plasma processing device includes: a high frequency power source for voltage bias; an impedance regulating part; a voltage measuring part for measuring the voltage of the impedance regulating part; a band-pass filter between the impedance regulating part and the voltage measuring part; and a control part, changing the impedance value of the impedance regulating part when the plasma generates, meanwhile obtaining the voltage value measured by the voltage measuring part, according to the voltage value, calculating the current value flowing into the anode electrode, so that the current value becomes maximum or the impedance value of the impedance regulating part is set by neighbouring manners.
Description
Technical field
The present invention relates to utilize High frequency power to make and handle gas plasmaization, and utilize this plasma substrate to be carried out plasma processing apparatus, method of plasma processing and the storage medium of processing such as etching.
Background technology
In the manufacturing process of the flat plate panel of semiconductor device, liquid crystal indicator etc., for processed substrate such as semiconductor wafer, glass substrate being carried out PROCESS FOR TREATMENT such as etch processes and film forming processing, use plasma processing unit such as plasma-etching apparatus, plasma CVD film formation device.
As plasma processing apparatus, generally use the capacitance coupling plasma processing unit of parallel plate-type.Figure 11 is the equivalent electric circuit in this plasma processing apparatus, and the wall portion of processing unit 11 is the inductance composition with respect to high frequency.Therefore, when plasma generation in container handling 11, because between upper electrode 12 and lower electrode 13 capacitive coupling takes place, so be wall portion → matching box 16 → ground of match circuit 15 → lower electrode 13 → plasma → upper electrode 12 → container handling 11 from the path of the high-frequency current of high frequency electric source 14.
But, the glass substrate that flat plate panel such as LCD is used in as the substrate of process object has the tendency of more and more large-scale change, thereupon, container handling 11 maximizes, the inductance composition of container handling 11 increases, therefore exist the coupling between upper electrode 12 and the lower electrode 13 to weaken, between the wall portion of lower electrode 13 and container handling 11, produce the problem of plasma (being recited as capacitive coupling among Figure 11).When producing this plasma, there is the plasma deflection periphery of handling in the electric capacity 11, the result can not be to carrying out the uniformity high processing in the face of substrate 10, and inwall, the internal part of handling electric capacity 11 damage, and perhaps accelerates the problem of their consumption etc. easily.
So in order to solve such problem, applicant's motion of present patent application has the technology (patent documentation 1) that the impedance adjustment part is set.Figure 12 represents when with lower electrode during as negative electrode (cathode) electrode, be provided with the plasma-etching apparatus 1 of the impedance adjustment part 17 that comprises inductor 17a and variable capacitor 17b, the path of high frequency is wall portion → matching box 16 → ground of high frequency electric source 14 → conductive path 14A → match circuit 15 → lower electrode 13 → plasma → upper electrode 12 → conductive path 12A → impedance adjustment part 17 → container handling 11.And in patent documentation 1, by becoming the resistance value that maximum mode is adjusted impedance adjustment part 17 so that flow through the current value of anode (anode) electrode (in patent documentation 1, being lower electrode), make the resistance value between anode electrode and the container handling be maximum, suppress paradoxical discharge.Wherein,, also exist to lower electrode 13 to apply high frequency bias, carry out the situation of plasma etch process though in Figure 12, be omitted.
But, as shown in figure 13, being determined at of actual current value connects probe 18a, the 18a that each high pressure is measured usefulness between upper electrode 12, variable capacitor 17b and the inductor 17a, at these probes 18a, the last wide-band oscilloscope 18b be connected with the computer 18 that special-purpose software is installed that connects of 18a, setting predetermined process condition and form plasma.And the operator of device is when manually changing the static capacity of variable capacitor 17b, use above-mentioned probe 18a, 18a, computer 18 and wide-band oscilloscope 18b, on each position of variable capacitor 17b, measure the suitable voltage waveform data of frequency with high frequency electric source 14, flow into the electric current [I-total] of upper electrode 12 according to this data computation, the plasma of visual formation in addition, decide the static capacity of variable capacitor 17b according to this visual discharge condition of seeing and the above-mentioned current value that calculates, these all need labor intensive and time.
Patent documentation 1: the Japan Patent spy opens 2005-340760 communique (paragraph 0027～0030,0058,0061)
Summary of the invention
The present invention finishes in view of the above problems, its objective is to be provided in the plasma processing apparatus that is provided with the impedance adjustment part between anode electrode and the container handling, can be easily and suitably be used to suppress the technology that the impedance of the impedance adjustment part of paradoxical discharge is adjusted.
Plasma processing apparatus of the present invention has: in container handling with the insulation of this container handling, and the cathode electrode that is connected of the high frequency electric source of the high frequency of using by match circuit and output generation plasma; With relatively be provided with this cathode electrode, and anode electrode by insulator and the insulation of above-mentioned container handling, this plasma processing unit is uploaded for an electrode in above-mentioned cathode electrode and above-mentioned anode electrode and is equipped with substrate, utilize High frequency power to make and handle gaseous plasmaization and utilize this plasma substrate to be carried out the plasma processing apparatus of the parallel plate-type of plasma treatment, it is characterized in that having:
When producing plasma, on the electrode of mounting substrate one side, apply the high frequency electric source that the bias voltage of the high frequency of using than the low bias voltage of frequency that produces the high frequency that plasma uses is used;
One distolateral and above-mentioned anode electrode is connected and another distolateral and above-mentioned container handling is connected, and is used to control from cathode electrode through the wall portion of plasma, anode electrode and the container handling impedance adjustment part to the resistance value of the ground connection basket of above-mentioned match circuit;
Measure the voltage determination portion of the voltage of above-mentioned impedance adjustment part;
Between above-mentioned impedance adjustment part and voltage determination portion, at the voltage of impedance adjustment part, the frequency of the high frequency that the generation plasma is used is f1, when the frequency of the high frequency that bias voltage is used is f2 in season, as passing through frequency band, f1-f2 and f1+f2 are as the band pass filter of attenuation band with f1; With
The resistance value of above-mentioned impedance adjustment part is changed, obtain the magnitude of voltage of measuring by above-mentioned voltage determination portion simultaneously, according to this magnitude of voltage, calculate to flow into the current value of above-mentioned anode electrode, so that this current value becomes the control part that maximum or near the mode it are set the resistance value of above-mentioned impedance adjustment part.
For example above-mentioned impedance adjustment part also can comprise variable capacitor, be provided with the driving mechanism of fine setting (trimmer) mechanism that drives the static capacity of adjusting above-mentioned variable capacitor, above-mentioned control part also can be set the capacitance of variable capacitor by above-mentioned driving mechanism, and the resistance value of setting impedance adjustment part, perhaps above-mentioned control part also can be with the magnitude of voltage of basis by voltage determination portion mensuration, the direct capacitance value of above-mentioned variable capacitor, the resistance value of the element of the formation impedance adjustment part beyond the above-mentioned variable capacitor, with the insulation capacitance of the insulator that makes the insulation of above-mentioned anode electrode and container handling, the mode of calculating the current value that flows into above-mentioned anode electrode constitutes.
Above-mentioned control part, for example so that the mode that the direct capacitance value of above-mentioned variable capacitor increases is successively controlled above-mentioned driving mechanism, when the current value that flows into above-mentioned anode electrode begins to reduce, stop above-mentioned driving mechanism, set the capacitance of above-mentioned variable capacitor thus.In addition, the series circuit of second cell that above-mentioned impedance adjustment part constitutes by first cell that comprises above-mentioned variable capacitor with by capacitor or inductor constitutes, above-mentioned voltage determination portion also can measure the both end voltage of above-mentioned first cell or the both end voltage of second cell, and, face direction at anode electrode is provided with a plurality of above-mentioned impedances adjustment part, above-mentioned control part also can be set the capacitance of the variable capacitor of 1 impedance adjustment part, perhaps sets the capacitance of the variable capacitor of the impedance adjustment part more than 2 simultaneously.In addition, the treatment conditions of storage when carrying out plasma treatment and the storage part of the trim locations of the variable capacitor of making decision in these treatment conditions for example also can be set, when substrate is carried out plasma treatment, above-mentioned control part is read the trim locations corresponding with these treatment conditions from memory, thus controlling and driving mechanism.
Method of plasma processing of the present invention, it carries out the method for plasma processing of plasma treatment as described below for using the plasma processing apparatus with following structure, and this plasma processing unit has:
The cathode electrode that the high frequency electric source of the high frequency of using with the insulation of this container handling and by match circuit and output generation plasma in container handling is connected;
Relatively be provided with this cathode electrode and across the anode electrode of insulator and the insulation of above-mentioned container handling; With
One distolateral and above-mentioned anode electrode is connected and another distolateral and above-mentioned container handling is connected, be used to control from cathode electrode through the wall portion of plasma, anode electrode and container handling impedance adjustment part to the resistance value of the ground connection basket of above-mentioned match circuit,
Utilize this plasma processing unit, in container handling, make the processing gaseous plasmaization by High frequency power, utilize this plasma that the substrate that is positioned on the side in cathode electrode and the anode electrode is handled, this plasma processing method is characterised in that, comprising:
Between above-mentioned cathode electrode and anode electrode, apply and produce the operation that high frequency that plasma uses makes plasma generation;
When carrying out this operation, there is the electrode of substrate to apply the operation of the high frequency of using than the low bias voltage of frequency that produces the high frequency that plasma uses to mounting;
The frequency that produces the high frequency that plasma uses in season is f1, when the frequency of the high frequency that bias voltage is used is f2, by in above-mentioned impedance adjustment part be used to measure band pass filter between the voltage determination portion of voltage of this impedance adjustment part, the voltage of f1 in the voltage of impedance adjustment part is passed through, but suppress the operation of the voltage of the above frequency content of the voltage of the following frequency content of f1-f2 and f1+f2;
When plasma generation, by control part the resistance value of impedance adjustment part is changed, obtain the operation of the magnitude of voltage of measuring by above-mentioned voltage determination portion simultaneously;
According to the magnitude of voltage of in this operation, obtaining, calculate the operation of the current value that flows into above-mentioned anode electrode; With
So that the current value that calculates in this operation becomes the operation that maximum or near the mode it are set the resistance value of above-mentioned impedance adjustment part.
Above-mentioned impedance adjustment part also can have variable capacitor, this variable capacitor can be adjusted its static capacity by driving mechanism, also can comprise so that the mode that the capacitance of above-mentioned variable capacitor increases is successively controlled the operation of above-mentioned driving mechanism, when beginning to reduce, the current value that flows into above-mentioned anode electrode stops above-mentioned driving mechanism, and set the capacitance of above-mentioned variable capacitor, in addition, also can be according to the magnitude of voltage of measuring by voltage determination portion, the direct capacitance value of above-mentioned variable capacitor, the resistance value of the element of the formation impedance adjustment part beyond the above-mentioned variable capacitor, with the insulation capacitance of the insulator that makes the insulation of above-mentioned anode electrode and container handling, calculate the operation of the current value that flows into above-mentioned anode electrode.
In addition, storage medium of the present invention is to store to be applied to substrate is carried out the plasma processing apparatus of plasma treatment and the storage medium of computer program of operation on computers, and it is characterized in that: aforementioned calculation machine program is composed of the step group in the mode of implementing above-mentioned method of plasma processing.
The invention effect
According to plasma processing apparatus of the present invention, because the resistance value of impedance adjustment part is changed by control part, measure the voltage of impedance adjustment part simultaneously by band pass filter, obtain this mensuration voltage, thereby set the suitable resistance value of impedance adjustment part, thus the suitable point of resistance value can be obtained automatically, and can be applied to the influence of the high frequency bias of substrate one side, suitably adjust impedance, can realize good plasma treatment.
In addition, for example the series circuit of second cell that constitutes by first cell that comprises above-mentioned variable capacitor with by capacitor or inductor constitutes above-mentioned impedance adjustment part, measure the voltage of a cell in these cells, thus, compare with the situation of the voltage of the whole parallel circuits of measuring impedance adjustment part and insulator, can avoid because the influence of parallel resonance etc. makes the situation of the big change of voltage generation, so can carry out suitable resistance adjustment more.
Description of drawings
Fig. 1 is the vertical side view that cuts as the plasma-etching apparatus of embodiments of the present invention.
Fig. 2 is the chart that expression is arranged on the frequency bandwidth characteristics of the band pass filter in the above-mentioned Etaching device.
Fig. 3 is the schematic diagram that is illustrated in the state that discharges in the above-mentioned plasma-etching apparatus.
Fig. 4 is the structure chart that expression is arranged on the control part in the plasma-etching apparatus.
Fig. 5 is illustrated in the above-mentioned plasma-etching apparatus, the flow chart of the operation of the optimum position of the fine setting of decision variable capacitor.
Fig. 6 is the structure chart that expression is arranged on other impedance adjustment part in the plasma-etching apparatus.
Fig. 7 is expression evaluation test result's a chart.
Fig. 8 is expression evaluation test result's a chart.
Fig. 9 is expression evaluation test result's a chart.
Figure 10 is expression evaluation test result's a chart.
Figure 11 is the figure of the equivalent electric circuit of the existing plasma-etching apparatus of expression.
Figure 12 is the vertical side view that cuts of the structure of the existing plasma-etching apparatus of expression.
Figure 13 is that expression uses above-mentioned plasma-etching apparatus to set the schematic diagram of the situation of impedance.
The explanation of symbol
2 plasma-etching apparatus
20 container handlings
31 lower electrodes
35,38 match circuits
37,39 high frequency electric sources
41 upper electrodes
5 impedance adjustment parts
53 variable capacitors
56 band pass filters
57 voltage determination portions
6 control parts
63 programs
Embodiment
Below with reference to Fig. 1, the execution mode in the device that plasma processing apparatus of the present invention is applied to the glass substrate 10 that the etching solution crystal display uses is described.This plasma Etaching device 2 for example has the container handling 20 by the angle barrel shape that is made of aluminium of the surface being carried out anodized.Central lower at this container handling 20 is provided with lower electrode 31, lower electrode 31 double as mountings by not shown transport mechanism conveyance to the mounting table of handling the substrate 10 in the container 20.Edge of opening in the bottom of this lower electrode 31 along matching box described later (matching box) is provided with insulator 32.By this insulator 32 lower electrode 31 is in from the electric fully state that floats of container handling 20.In the bottom of insulator 32,, be provided with perforation at peristome 21 that the diapire of container handling 20 forms and the matching box 34 below stretching to across support portion 33.
The upper and lower opening of matching box 34, and portion is provided with match circuit 35 within it.One end of conductive path 36 is connected with above-mentioned lower electrode 31, the other end bifurcated of conductive path 36, one side is connected with the high frequency electric source 37 that is arranged on matching box 13.56MHz 34 outsides, that be used to form plasma through match circuit 35, and the opposing party is connected with the high frequency electric source 39 that is arranged on 3.2MHz matching box 34 outsides, that be used to apply bias voltage through match circuit 38.And the bottom of matching box 34 constitutes outer layer segment 3B, the 3B of coaxial cable 3A, 3A and extends each the outer 3B of portion ground connection as the conductive path 36 with bifurcated.Like this, matching box 34 constitutes the ground connection basket of match circuit 35,38.
In addition, be connected with exhaust channel 22 at the sidewall of container handling 20, vacuum exhaust mechanism 23 is connected with this exhaust channel 22.And, at the sidewall of container handling 20, be provided with the family of power and influence 25 of the carrying port 24 that is used to open and close substrate 10.
Above lower electrode 31, be provided with the upper electrode 41 of double as in the mode relative as the gas tip of gas supply part with this lower electrode 31, in this plasma Etaching device 2, lower electrode 31, upper electrode 41 are equivalent to cathode electrode and anode electrode respectively.In addition, upper electrode 41, the insulator 42 that is provided with across the edge of opening along the peristome 26 of the upside that is arranged on container handling 20 is connected with the top plate portion of container handling 20, is in from the electric fully state that floats of container handling 20 by these insulator 42 upper electrodes 41.To be connected with processing gas supply mechanism 44 by gas supply passageway 43 and will to constitute from the mode that a large amount of gas orifice 45 feeds in the container handling 20 from the processing gas that gas supply passageway 43 is supplied with.
On container handling 20, to cover the mode of peristome 26, be provided with the cover 46 of blocking upside, an end of conductive path 51 is connected with upper electrode 41, cover 46 respectively with the other end.Be provided with in conductive path 51 by the variable capacitor 53 of conduct first cell that is connected in series mutually and the impedance adjustment part 5 that constitutes as the inductor 52 of second cell, variable capacitor 53 and inductor 52 are separately positioned on cover 46 1 sides and upper electrode 41 1 sides.Variable capacitor 53 has micro-adjusting mechanism, changes its static capacity by adjusting its trim locations.Between the tie point of variable capacitor 53 and inductor 52 and ground, be connected with conductive path 54, band pass filter 56 and voltage determination portion 57.
At this, the high frequency of the 3.2MHz that the bias voltage of the 13.56MHz that the generation plasma is used because flow in above-mentioned impedance adjustment part 5 is used, so in the voltage (current potential of above-mentioned tie point) of variable capacitor 53, except the voltage that 13.56MHz occurs, also occur as the voltage of 16.76 (13.56+3.2) MHz of both frequency sums with as the voltage of 10.36 (13.56-3.2) MHz of the difference of both frequencies.Therefore, as shown in Figure 2, band pass filter 56 with 13.56MHz for by frequency band, with more than the 16.76MHz and be attenuation band below the 10.36MHz.Promptly be formed on the structure that 13.56MHz has big Q value.
Fig. 3 is the figure that schematically represents plasma-etching apparatus 2, describes with reference to this figure.Wherein, for convenience of description, in Fig. 3, do not put down in writing the high frequency electric source 39 that bias voltage is used.When high frequency electric source 37 conductings, with the path flow high-frequency current of high frequency electric source 37 → match circuit 35 → lower electrode 31 → plasma → upper electrode 41.Though mainly in the path flow of impedance adjustment part 5 → container handling 20, a part flows in the path of insulator 42 → container handling 20 high-frequency current that flows in upper electrode 41.And, though the high-frequency current that flows in container handling 20 flows in the path as outer layer segment 3B → ground connection of matching box 34 → coaxial cable 3A of ground connection basket, but as putting down in writing in the background technology hurdle, because exist high-frequency current in the problem that flows this unusual path to the wall portion that handles container 20 through plasma from lower electrode 31, so utilize impedance adjustment part 5 to adjust the resistance value in path (returning (return) path) from upper electrode 41 to the top of handling container 20.
The capacitance of representing with [C0] in Fig. 3 is suitable with the insulated electro capacity of the insulator 42 between container handling 20 and upper electrode 41.In addition, [IC0] is illustrated in the electric current that flows in the insulator 42 in the drawings, the static capacity of [Cs] expression variable capacitor 53, [ICs] is illustrated in the electric current that flows in the impedance adjustment part 5, [VCs] expression is by the both end voltage of the variable capacitor 53 of voltage determination portion 57 mensuration, [I-total] represents to flow to from lower electrode 31 electric current of upper electrode 41, the inductance coefficent of [Ls] expression inductor 52.
Because the high frequency that flows in the path of above-mentioned lower electrode 31 → plasma → container handling 20 when becoming maximum when the electric current [I-total] that flows in above-mentioned upper electrode 41 becomes minimum, so in processing described later, position by change variable capacitor 53, and change its static capacity Cs, thereby change the resistance value of impedance adjustment part 5, decision [I-total] is the position of the variable capacitor 53 of maximum thus.
The structure of control part 6 then is described with reference to Fig. 4.Control part 6 for example is made of computer, has input picture (not shown).This imports picture, mode with the treatment conditions such as electric power that can import and set pressure in the gaseous species, container handling 20, high frequency electric source 37 arbitrarily constitutes, and constitutes with the impedance setting pattern of the position of the fine setting of the variable capacitor 53 that can select to determine impedance adjustment part 5 or to the mode that substrate carries out the processing substrate pattern of plasma etch process.The 61st, bus.And, bus 61 be stored in program 63 in the program storage part 62, that be used to implement the aftermentioned effect, be connected with the working storage 64 of calculating the electric current [I-total] that in upper electrode 41, flows.And, be connected with the memory of storage list 65, data 66 and table 67 in bus 61, in order to make explanation simple, only figure is shown with table 65, data 66 and table 67 in Fig. 4, wherein, table 65 is for making the trim locations and the corresponding table of its static capacity [Cs] of variable capacitor 53, and data 66 are to obtain the data of relation of the trim locations of above-mentioned electric current [I-total] and variable capacitor 53, and table 67 is to make the treatment conditions table corresponding with best trim locations.
In working storage 64, carry out various calculating, store the value of above-mentioned [C0] and [Ls] in advance, calculate the value of [I-total] according to these values with from the value of the value of [VCs] of voltage determination portion 57 output and [Cs] corresponding with the position of the fine setting that obtains the variable capacitor 53 should [VCs] time.
In table 65, store the value of the static capacity [Cs] of each position of regulation of fine setting of predefined variable capacitor 53 and this each locational variable capacitor 53.Wherein, so-called trim locations specifically, for example is the umber of pulse of the encoder that links with motor 58.Data 66 are each trim locations of expression variable capacitor 53 and the data of the relation of [I-total] that calculate on each trim locations of variable capacitor 53, as described later, when calculating [I-Total] on each trim locations at variable capacitor 53, this result of calculation and trim locations are stored accordingly.These data are essentially chart shown in Figure 4.And these data 66, table 65,67 for example are presented in the above-mentioned input picture.Table 67 writes and stores the treatment conditions of setting and the optimum position of the fine setting of [I-total] variable capacitor 53 when becoming maximum of calculating under these treatment conditions.
Below, describe with reference to flow process shown in Figure 5 order the optimum position of the fine setting of trying to achieve variable capacitor 53.
(step S1)
When the treatment conditions such as electric power of the pressure of operator in input picture input gaseous species, container handling 20, high frequency electric source 37, the trim locations that control part 6 is read the variable capacitor 53 that this static capacity [Cs] for example becomes hour from table 65, [Cs] that be adjusted to variable capacitor 53 by motor 58 is minimum position.
(step S2)
Then, in container handling 20, supply with the gas of setting from upper electrode 41, and, become the pressure of setting vacuumizing in the container handling 20.Then, connect high frequency electric source 37, the high frequency of the electric power set is fed to lower electrode 31, form plasma between lower electrode 31 and upper electrode 41, such as already explained, high-frequency current flows to container handling 20 through impedance adjustment part 5.
(step S3)
Be determined at the voltage [VCs] of the electric current that flows in the variable capacitor 53 by voltage determination portion 57, control part 6 is written to this voltage determination value [VCs] in the working storage 64 and from the value that table 65 is read above-mentioned [Cs], calculates value of current flowing [ICs] in impedance adjustment part 5 according to these [VCs] and [Cs].
(step S4)
Afterwards, control part 6 calculates the value of the current potential [VC0] of the upper electrode 41 that is connected with impedance adjustment part 5 according to [ICs] that calculate, according to this [VC0] and the value of insulated electro capacity [C0] of the insulator 42 of input in advance, calculate the value of the electric current [IC0] that in insulator 42, flows.
(step S5)
Further, control part 6 calculates [ICs]+[IC0], calculates the value of [I-total], and this [I-total] that calculates and trim locations correspondence is also stored.This operation is equivalent to describe the chart that (plot) is expressed as data 66.
(step S6)
After describing to finish, control part 6 is worth corresponding trim locations from big 1 grade [Cs] value of table 65 read-around ratio present [Cs] with in this stage with second bigger [Cs], and variable capacitor 53 is arranged on this position.After this implementation step S3 is to step S6.In addition because in fact can rule of thumb wait in advance the general appropriate value of grasping [Cs], so also can from [Cs] suitable trim locations bigger than the minimum value of [Cs].
(step S7)
Repeat above-mentioned steps S3 to step S6,, describe chart as both relation datas for the trim locations sequentially determining [I-total] of the variable capacitor of in table 65, setting 53.And, when the value of [I-total] that newly calculate is hanged down than the value of [I-total] that calculate in previous timing (timing), promptly end the change operation of trim locations constantly at this, with this trim locations constantly as the optimum position, the treatment conditions of this optimum position and initial input are stored in the table 67, for example on the input picture, demonstrate this situation.
Then, in the time of in will the treatment conditions different being input to the input picture with the treatment conditions that the operator imports in advance, carry out above-mentioned steps S1～S7 equally, further the optimum position with these treatment conditions and the variable capacitor 53 corresponding with these treatment conditions is stored in the table 67.
Then the order of plasma etch process is carried out in explanation to substrate 10.When the operator from input picture and selecting processing substrate pattern, when setting treatment conditions, control part 6 is read the optimum position of the fine setting of the variable capacitor corresponding with these treatment conditions 53 from table 67, and variable capacitor 53 is arranged on this optimum position.
Then substrate 10 is moved into and handled in the container 20, and be positioned on the lower electrode 31, will be evacuated down to predetermined pressure in the container handling in the mode corresponding with treatment conditions, and from upper electrode 41 supply gas in container handling 20.Then, connect high frequency electric source 37,39, in container handling 20, import high frequency from high frequency electric source 37, between lower electrode 31 and upper electrode 41, form plasma, and apply bias voltage to substrate 10 substrate 10 is carried out etch processes with the power value of setting.For example begin through disconnection high frequency electric source 37,39 after the scheduled time, and stop supply gas in container handling 20, finish etch processes, become the pressure of regulation in the container handling 20 from forming plasma.
According to this plasma Etaching device 2, because change the trim locations of the included variable capacitor 53 in the impedance adjustment part be arranged between upper electrode 41 and the container handling 20 5, measure the voltage of variable capacitor 53 simultaneously by band pass filter 56, measure the suitable trim locations that voltage is set variable capacitor 53 according to this, so can obtain the suitable point of resistance value automatically, and the influence ground that can not be subjected to the high frequency that bias voltage uses carries out suitable resistance and adjusts, suppress this impedance and adjust the required time, realize good plasma treatment.
In addition, the series circuit that is made of variable capacitor 53 and inductor 52 constitutes above-mentioned impedance adjustment part 5, by measuring the voltage of above-mentioned variable capacitor 53, compare with the voltage condition that the mensuration impedance adjustment part 5 and the parallel circuits of insulator 42 are all, because avoided becoming the change significantly of zero voltage that causes, so can carry out more suitable resistance adjustment because of the resistance value of parallel resonance, parallel circuits.
Paradoxical discharge takes place in the zone of reducing though the electric current in flowing in upper electrode 41 [I-total] surpasses maximum easily, but in the above-described embodiment in moment that electric current [I-total] reduces, stop at the change of the static capacity under these treatment conditions, so can prevent the inwall of the container handling 20 that causes because of paradoxical discharge, the damage of internal part.
In addition, because in the table 67 of control assembly 6, store the trim locations of treatment conditions and the variable capacitor corresponding with these treatment conditions, when carrying out the plasma treatment of substrate, can read this trim locations automatically, and variable capacitor 53 is arranged on this position and handles, so can save operator's time.
Fig. 6 is the figure of expression as the impedance adjustment part 8 of the variation of impedance adjustment part 5, is provided with inductor 52 and variable capacitor 53 in this impedance adjustment part 8 on the contrary.And voltage determination portion 57 measures the voltage [VCc] of inductor 52, replaces [VCs] to use [VCc] to calculate [I-total] in aforementioned calculation.At this, though inductor 52 is suitable with second cell described in the summary of the invention, even but under the situation that these parts of inductor are not set, when when the connection copper coin is installed in impedance adjustment part 5 in the container handling, this connection copper coin is suitable with second cell that becomes inductor.
In addition, a plurality of impedances adjustment part 5 also can be set.In this case, also can be so that the static capacity [Cs] of the variable capacitor 53 of each impedance adjustment part 5 becomes the mode of identical value simultaneously adjusts, similarly measure the voltage of one of them variable capacitor simultaneously with the execution mode of front, similarly try to achieve optimal trim locations according to this measured value.Perhaps also can only adjust [Cs] of 1 variable capacitor 53, make in addition [Cs] fixing,, similarly set optimal trim locations according to the voltage of this 1 variable capacitor 53.
In addition, also each high frequency electric source 37,39 and impedance adjustment part 5 can be set on the contrary up and down, promptly also can between container handling 20 and lower electrode 31, impedance adjustment part 5 be set, high frequency electric source 37,39 is connected with upper electrode 41.
(evaluation test 1-1)
As evaluation test 1-1, at first use above-mentioned plasma-etching apparatus 2, investigate the relation of the trim locations of [I-total] and variable capacitor 53, detect the optimum position of the fine setting of variable capacitor 53.Use Cl
2/ SF
6As the processing gas that feeds to from upper electrode 41 in the container handling 20.But in the plasma-etching apparatus 2 that in this evaluation test 1, uses band pass filter 56 is not set, and does not apply the high frequency voltage of using from the bias voltage of high frequency electric source 39.In addition, the resistance value of the impedance adjustment part 5 of each position during Fig. 7 (a) expression trim locations that measure in advance, change variable capacitor 53.
(evaluation test 1-2)
In addition, as evaluation test 1-2, to use the existing method of plasma-etching apparatus 1, probe 18a, oscilloscope 18b and the computer 18 shown in the background technology hurdle, the relation of the trim locations of investigation [I-total] and variable capacitor, and the state of the plasma that forms by Visual Confirmation.Similarly set each treatment conditions with evaluation test 1-1, in this evaluation test 1-2, also do not apply the high frequency that bias voltage is used.
The result of the graphical presentation evaluation test 1-1 of Fig. 7 (b), the result of the graphical presentation evaluation test 1-2 of Fig. 7 (c), in addition, following table 1 is illustrated in each position of variable capacitor among the evaluation test 1-2 and the relation of the plasmoid of passing through Visual Confirmation.From the chart of Fig. 7 (b) as can be known: [I-total] becomes the highest when the trim locations of variable capacitor 53 is near 70% plasma-etching apparatus 2.And, from the chart of Fig. 7 (c) as can be known: though in the conventional method when trim locations is near 70% [I-total] also become the highlyest, and as shown in table 1, plasma is in the best state when trim locations is 70%.Thereby the optimum position that can confirm the fine setting of variable capacitor 53 in plasma-etching apparatus 2 is suitably detected, and confirms can set best according to the present invention the resistance value of impedance adjustment part 5.
[table 1]
| The trim locations of variable capacitor | The visual state of |
| 0％ | △ |
| 10％ | △ |
| 20％ | △ |
| 30％ | △ |
| 40％ | △ |
| 50％ | △ |
| 60％ | ○ |
| 70％ | ◎ |
| 80％ | △ |
| 90％ | × |
| 100％ | × |
(evaluation test 2-1)
Then except feeding to gas in the container handling 2 from Cl
2/ 8F
6Change to O
2Outside the gas, similarly use plasma-etching apparatus 2 to measure [I-total] on each trim locations of variable capacitors 53 with evaluation test 1-1.Wherein, the resistance value of the impedance adjustment part 5 of each position and evaluation test 1-1 are same.
(evaluation test 2-2)
In addition, as evaluation test 2-2, with the existing method same with evaluation test 1-2, the relation of the trim locations of investigation [I-total] and variable capacitor, and the plasmoid that forms by Visual Confirmation.Similarly set each treatment conditions with evaluation test 2-1.
The result of the graphical presentation evaluation test 2-1 of Fig. 8 (a), the result of the graphical presentation evaluation test 2-2 of Fig. 8 (b), in addition, following table 2 is illustrated in each position of variable capacitor 53 among the evaluation test 2-2 and the relation of the state of the plasma that passes through Visual Confirmation.From the chart of Fig. 8 (a) as can be known: when trim locations is observed peak value 0% and 90% the time.In addition, from the chart of Fig. 8 (b) as can be known: [I-total] becomes the highlyest, and as shown in table 2 when trim locations is near 90% in the conventional method, and plasma is in the best state when the trim locations of variable capacitor is 90%.At Fig. 8 (a) though chart in trim locations be 0% also to observe peak value, this is because not only measured the voltage that plasma forms the high frequency 13.56MHz composition of usefulness, has also measured the voltage as the 27.12MHz frequency content of its high order harmonic component.Therefore, according to this experiment as can be known: the influence of as illustrating in the above-mentioned execution mode band pass filter is set, removing high order harmonic component etc. is surveyed effectively the peak value flase drop that prevents [I-total].
[table 2]
| The trim locations of variable capacitor | The visual state of |
| 0％ | △ |
| 10％ | △ |
| 20％ | △ |
| 30％ | △ |
| 40％ | △ |
| 50％ | △ |
| 60％ | ○ |
| 70％ | ○ |
| 80％ | ○ |
| 90％ | ◎ |
| 100％ | × |
(evaluation test 3)
As evaluation test 3, use plasma-etching apparatus 2, [I-total] when calculating trim locations when the change variable capacitor with the same order of evaluation test 1-1.Though in this evaluation test 3, be applied with the high frequency voltage that bias voltage is used, band pass filter 56 be not set equally with evaluation test 1-1.Use Cl
2/ SF
6Gas, the resistance value of the impedance adjustment part 5 of each trim locations is identical with evaluation test 1-1.And, also use above-mentioned existing assay method measure each trim locations [I-total] and by Visual Confirmation the state of plasma.In this existing assay method, also applied the high frequency voltage that bias voltage is used.
The result of the graphical presentation evaluation test 3 of Fig. 9 has the peak value of a plurality of [I-total] like that shown in this chart.The peak value of [I-total] that obtains by existing assay method when trim locations is 70% is shown, and the plasmoid by Visual Confirmation when being this position is also best.In case hence one can see that overlapping high frequency voltage then easily flase drop measure the peak value of [I-total].
(evaluation test 4)
As evaluation test 4, in plasma-etching apparatus 2, the voltage of each frequency content of investigation when changing the trim locations of variable capacitor.Though in this evaluation test 4, also on lower electrode 31, apply the high frequency voltage that bias voltage is used, band pass filter 73 be not set in Etaching device 2.Figure 10 (a)～(c) is a chart of representing result at this moment.According to this chart, if the overlapping high frequency that is applied on the lower electrode 31, then according to the trim locations of variable capacitor 53, not only plasma forms the composition of the high frequency 13.56MHz of usefulness, and the voltage of 13.56+3.2=16.76MHz, 13.56MHz+2 * 3.2=19.96MHz composition also increases.And the output valve that has voltage determination portion becomes unstable, can not calculate correct [I-total], can not detect the problem that this [I-total] becomes near the trim locations of maximum or maximum.From the result of evaluation test 3 and evaluation test 4 as can be known, it is effective that band pass filter is set shown in above-mentioned execution mode like that.
Claims (10)
1. plasma processing apparatus, it has: in container handling with this container handling insulation, and the cathode electrode that is connected of the high frequency electric source of the High frequency power of using by match circuit and output generation plasma; With relatively be provided with this cathode electrode and anode electrode by the insulation of insulator and described container handling, this plasma processing unit is uploaded for an electrode in described cathode electrode and described anode electrode and is equipped with substrate, and utilize High frequency power to make and handle gaseous plasmaization and utilize this plasma described substrate to be carried out the plasma processing apparatus of the parallel plate-type of plasma treatment, it is characterized in that having:
When producing plasma, on the electrode of a side of the described substrate of mounting, apply the high frequency electric source that the bias voltage of the High frequency power that bias voltage uses is used, the frequency that the frequency ratio of the High frequency power that this bias voltage is used produces the High frequency power that plasma uses is low;
One distolateral and described anode electrode is connected and another distolateral and described container handling is connected, and is used to control from described cathode electrode through the wall portion of plasma, described anode electrode and the described container handling impedance adjustment part to the resistance value of the ground connection basket of described match circuit;
Measure the voltage determination portion of the voltage of described impedance adjustment part;
Between described impedance adjustment part and described voltage determination portion, and in season at the voltage of described impedance adjustment part, the frequency of the High frequency power that the generation plasma is used is f1, when the frequency of the High frequency power that bias voltage is used is f2, as passing through frequency band, f1-f2 and f1+f2 are as the band pass filter of attenuation band with f1; With
The resistance value of described impedance adjustment part is changed, obtain the magnitude of voltage of measuring by described voltage determination portion simultaneously, according to this magnitude of voltage, calculate the current value that flows into described anode electrode, so that this current value becomes the control part that the maximum mode is set the resistance value of described impedance adjustment part.
2. plasma processing apparatus as claimed in claim 1 is characterized in that:
Described impedance adjustment part comprises variable capacitor;
Be provided with the driving mechanism of the micro-adjusting mechanism that drives the static capacity of adjusting described variable capacitor, described control part is set the capacitance of described variable capacitor by described driving mechanism, thereby sets the resistance value of described impedance adjustment part.
3. plasma processing apparatus as claimed in claim 2 is characterized in that:
Described control part is according to the resistance value of the element that constitutes described impedance adjustment part beyond the magnitude of voltage of being measured by described voltage determination portion, the direct capacitance value of described variable capacitor, the described variable capacitor and make described anode electrode and the insulation capacitance of the insulator of described container handling insulation, calculates the current value of the described anode electrode of inflow.
4. as each the described plasma processing apparatus in claim 2 and 3, it is characterized in that:
Described control part so that the mode that the direct capacitance value of described variable capacitor increases is successively controlled described driving mechanism, stops described driving mechanism when the current value that flows into described anode electrode begins to reduce, set the capacitance of described variable capacitor thus.
5. plasma processing apparatus as claimed in claim 2 is characterized in that:
The series circuit of second cell that described impedance adjustment part constitutes by first cell that comprises described variable capacitor with by capacitor or inductor constitutes, and described voltage determination portion measures the both end voltage of described first cell or the both end voltage of second cell.
6. plasma processing apparatus as claimed in claim 2 is characterized in that:
In the face direction of described anode electrode, be provided with a plurality of described impedances adjustment part, described control part is set the capacitance of the described variable capacitor of 1 described impedance adjustment part, perhaps sets the capacitance of the described variable capacitor of the described impedance adjustment part more than 2 simultaneously.
7. plasma processing apparatus as claimed in claim 2 is characterized in that:
Be provided with the treatment conditions of storage when carrying out plasma treatment and the storage part of the trim locations of the described variable capacitor of making decision in these treatment conditions, when described substrate was carried out plasma treatment, described control part was read the trim locations of the described variable capacitor corresponding with the treatment conditions of this plasma processing and is controlled described driving mechanism from storage part.
8. method of plasma processing, it carries out the method for plasma processing of plasma treatment for using plasma processing apparatus, and this plasma processing unit has:
The cathode electrode that the high frequency electric source of the High frequency power of using with the insulation of this container handling and by match circuit and output generation plasma in container handling is connected;
Relatively be provided with this cathode electrode and across the anode electrode of insulator and the insulation of described container handling; With
One distolateral and described anode electrode is connected and another distolateral and described container handling is connected, be used to control from described cathode electrode through the wall portion of plasma, described anode electrode and described container handling impedance adjustment part to the resistance value of the ground connection basket of described match circuit
Utilize this plasma processing unit, in described container handling, make the processing gaseous plasmaization by High frequency power, utilize this plasma that the substrate that is positioned on the side in described cathode electrode and the described anode electrode is handled, this plasma processing method is characterised in that, comprising:
Between described cathode electrode and described anode electrode, apply and produce first operation that High frequency power that plasma uses makes plasma generation;
When carrying out this first operation, there is the electrode of described substrate to apply second operation of the High frequency power that bias voltage uses to mounting, the frequency that the frequency ratio of the High frequency power that this bias voltage is used produces the High frequency power that plasma uses is low;
The frequency that produces the High frequency power that plasma uses in season is f1, when the frequency of the High frequency power that bias voltage is used is f2, by in described impedance adjustment part be used to measure band pass filter between the voltage determination portion of voltage of this impedance adjustment part, the voltage of f1 in the voltage of described impedance adjustment part is passed through, but suppress the 3rd operation of the voltage of the above frequency content of the voltage of the following frequency content of f1-f2 and f1+f2;
When plasma generation, by control part the resistance value of described impedance adjustment part is changed, obtain the 4th operation of the magnitude of voltage of measuring by described voltage determination portion simultaneously;
According to the magnitude of voltage of in the 4th operation, obtaining, calculate the 5th operation of the current value that flows into described anode electrode; With
So that the current value that calculates in the 5th operation becomes the 6th operation that peaked mode is set the resistance value of described impedance adjustment part.
9. method of plasma processing as claimed in claim 8 is characterized in that:
Described impedance adjustment part has variable capacitor, and the static capacity of described variable capacitor is adjusted by driving mechanism;
Comprise so that the mode that the capacitance of described variable capacitor increases is successively controlled the operation of described driving mechanism;
When the current value that flows into described anode electrode begins to reduce, stop described driving mechanism, and carry out the setting of the capacitance of described variable capacitor.
10. method of plasma processing as claimed in claim 9 is characterized in that:
Calculating flow into the step of the current value of described anode electrode, according to the resistance value of the element that constitutes described impedance adjustment part beyond the magnitude of voltage of measuring by described voltage determination portion, the direct capacitance value of described variable capacitor, the described variable capacitor and the insulation capacitance of the insulator that makes described anode electrode and insulate with described container handling be performed.
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| JP6084417B2 (en) * | 2012-09-28 | 2017-02-22 | 株式会社ダイヘン | Impedance adjustment device |
| JP6289860B2 (en) * | 2012-10-23 | 2018-03-07 | ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ | TCCT matching circuit for plasma etching chamber |
| JP6078419B2 (en) * | 2013-02-12 | 2017-02-08 | 株式会社日立ハイテクノロジーズ | Control method of plasma processing apparatus, plasma processing method and plasma processing apparatus |
| KR101554306B1 (en) * | 2013-12-27 | 2015-09-18 | 엘아이지인베니아 주식회사 | Apparatus for processing inductively coupled plasma |
| JP6226777B2 (en) * | 2014-03-06 | 2017-11-08 | Ｓｐｐテクノロジーズ株式会社 | Abnormal discharge prediction method and apparatus for plasma processing apparatus, and plasma processing apparatus with abnormal discharge prediction function |
| EP3130302A4 (en) * | 2014-04-11 | 2017-12-13 | Olympus Corporation | Plasma treatment system |
| KR102193368B1 (en) * | 2016-12-15 | 2020-12-22 | 주식회사 원익아이피에스 | Substrate processing apparatus |
| CN108257840B (en) * | 2016-12-29 | 2021-03-30 | 中微半导体设备(上海)股份有限公司 | Plasma processing device |
| JP6772117B2 (en) | 2017-08-23 | 2020-10-21 | 株式会社日立ハイテク | Etching method and etching equipment |
| JP7094856B2 (en) * | 2018-10-19 | 2022-07-04 | 東京エレクトロン株式会社 | Filter unit adjustment method and plasma processing equipment |
| CN112119485B (en) | 2019-04-22 | 2024-01-02 | 株式会社日立高新技术 | Plasma processing method |
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| KR102463554B1 (en) * | 2020-11-13 | 2022-11-09 | 충남대학교산학협력단 | Plasma device with integrated voltage and current sensor, and method for monitoring voltage and current of plasma device |
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| JP3497091B2 (en) | 1998-07-23 | 2004-02-16 | 名古屋大学長 | Method for controlling high frequency power for plasma generation and plasma generator |
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