CN101270490B - Dissipated metal indium chloride/chloridization 1-methyl-3-butyl imidazole system plating solution - Google Patents

Dissipated metal indium chloride/chloridization 1-methyl-3-butyl imidazole system plating solution Download PDF

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CN101270490B
CN101270490B CN2008100109795A CN200810010979A CN101270490B CN 101270490 B CN101270490 B CN 101270490B CN 2008100109795 A CN2008100109795 A CN 2008100109795A CN 200810010979 A CN200810010979 A CN 200810010979A CN 101270490 B CN101270490 B CN 101270490B
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methyl
indium
chloridization
metal
plating solution
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CN101270490A (en
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田鹏
黄涛
刘丽艳
段纪东
王倩
吕子健
赵启程
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Shenyang Normal University
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Shenyang Normal University
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Abstract

Dissipated metal indium chloride/chlorination 1- methyl-3-butyl-imidazole system plating liquid (g.kg<-1>) is formed by the following materials: 80 to 100 portions of the metal indium (In), 230 to 430portions of anhydrous InCl3, 180 to 360 portions of the chlorination 1- methyl-3-butyl-imidazole (MBIC), 200 to 300 portions of glycol, 1 to 3 portions of isinglass, 20 to 40 portions of dextrine aswell as 30 to 50 portions of sodium chloride(NaCl). Ion liquid is a novel green solvent and the indium-plated liquid researched by utilizing the room temperature ion liquid of the dissipated metal hasa plurality of specific properties like lower melting point, adjustable Lewis acidity, excellent conductive property, negligible steam pressure, wider using temperature, special solubility, etc. theindium-plated liquor does not have the problems of hydrating, hydrolyzing and hydrogen evolution and has the properties of no corrosion and low pollution that should be prepared by a green solvent. The fine indium quality is improved to a large extent and the purity of the indium can reach 99.99 percent by using the plating liquid to plate indium.

Description

Dissipated metal indium chloride/chloridization 1-methyl-3-butyl imidazole system plating solution
Technical field: the present invention relates to a kind of electroplate liquid, especially a kind of dissipated metal indium chloride/chloridization 1-methyl-3-butyl imidazole system plating solution.
Background technology: dissipated metal is meant a series of yttriums, comprising: gallium (Ga), indium (In), thallium (T1), germanium (Ge), selenium (Se), tellurium (Te) and rhenium (Re), dissipated metal is the superior resources of China.Purposes from indium, its elemental metals and alloy have many properties, be the propping material of current new and high technology, become especially indispensable brand-new material in the sophisticated technology fields such as nuclear power, aerospace, satellite communication, the energy of industry such as metallurgy, machinery, chemical industry, light industry, weaving, electronics and medicine.The production of these materials and processing all be unable to do without the high pure metal indium, and the high purity metal indium reaches 99.999% as the purity of raw material general requirement indium, even require to reach more than 99.9999%.The smart indium that China produces at present is 99.99% also, and the development of high pure metal indium and exploitation are urgent problems.The production of high purity indium mainly is to produce with electrolytic refining process at home.The plating solution of indium has prussiate type, sulfate type, fluoroboric acid type, dithiocarbamic acid type etc., may occur liberation of hydrogen effect, hydrolysis effect and emulsion etc. in electrolysis, therefore, and must strict composition and the electrolytic condition of controlling electrolytic solution.Along with development of science and technology, also more and more higher to quality, structure, performance, the type requirements of dissipated metal high purity indium and alloy thereof.Traditional smelting, refining and alloy preparation method can not satisfy the current needs of producing dissipated metal and alloy thereof fully, and also there is shortcoming in various degree in traditional method, serious etc. as high-temperature operation, energy consumption height, environmental pollution, therefore need seek a kind of new method.
Summary of the invention: at above-mentioned the deficiencies in the prior art, the invention provides a kind of dissipated metal indium chloride/chloridization 1-methyl-3-butyl imidazole system plating solution, indium purity can reach 99.999%.Below the indium chloride/chloridization 1-methyl-3-butyl imidazoles is abbreviated as InCl 3/ MBIC.
For achieving the above object, the technical solution used in the present invention is: dissipated metal InCl 3/ MBIC system plating solution (gkg -1) prescription:
Indium metal (In): 80～100
Anhydrous indium chloride InCl 3: 230～430
Chloridization 1-methyl-3-butyl imidazole (MBIC): 180～360
Ethylene glycol: 200～300
Gelatin: 1～3
Dextrin: 20～40
Sodium-chlor (NaCl): 30～50.
Ionic liquid is as a kind of emerging green solvent, utilize the plating solution of indium of dissipated metal ionic liquid at room temperature development, have some particular performances, as lower fusing point, adjustable Lewis acidity, good electrical conductivity, negligible vapour pressure, the use temperature of broad and special solvability etc.There are not problems such as aquation, hydrolysis, liberation of hydrogen in this plating solution of indium, and having not, burn into pollutes the little character that waits green solvent to possess.The present invention is owing to adopt chloridization 1-methyl-3-butyl imidazole (MBIC) to replace chlorination 1-methyl-3-ethyl imidazol(e) (EMIC) in indium chloride/chloridization 1-methyl-3-ethyl imidazol(e) system plating solution, makes that the use temperature of electroplate liquid is minimum to ease down to 20 ℃ (use temperature of indium chloride/chloridization 1-methyl-3-ethyl imidazol(e) system plating solution is 40～60 ℃).Can obtain bright coating owing to added ethylene glycol.And this electroplate liquid do not add prussiate, reduced pollution.
With this electroplate liquid indium plating, smart indium quality increases substantially, and the purity of indium reaches 99.999%.
Embodiment:
Use raw material: high-pure anhydrous indium chloride (InCl 3) (the safe scientific ﹠ technical corporation of Liuzhou indium, purity 99.99%), be kept at P 2O 5Moisture eliminator in, further purify before the use; Chloridization 1-methyl-3-butyl imidazole (purity 99%) uses preceding twice recrystallization.Indium (In) (purity 99.99%).Ethylene glycol, gelatin, dextrin, sodium-chlor (NaCl).
Embodiment 1:
Indium metal (In): 80
Anhydrous indium chloride InCl 3: 340
Chloridization 1-methyl-3-butyl imidazole (MBIC): 269
Ethylene glycol: 250
Gelatin: 1
Dextrin: 20
Sodium-chlor (NaCl): 40
Get said components, be mixed into the dissipated metal indium chloride/chloridization 1-methyl-3-butyl imidazole system plating solution of 1000 grams.
Embodiment 2:
Indium metal (In): 90
Anhydrous indium chloride InCl 3: 293
Chloridization 1-methyl-3-butyl imidazole (MBIC): 360
Ethylene glycol: 200
Gelatin: 2
Dextrin: 25
Sodium-chlor (NaCl): 30
Get said components, be mixed into the dissipated metal indium chloride/chloridization 1-methyl-3-butyl imidazole system plating solution of 1000 grams.
Embodiment 3:
Indium metal (In): 100
Anhydrous indium chloride InCl 3: 230
Chloridization 1-methyl-3-butyl imidazole (MBIC): 277
Ethylene glycol: 300
Gelatin: 3
Dextrin: 40
Sodium-chlor (NaCl): 50
Get said components, be mixed into the dissipated metal indium chloride/chloridization 1-methyl-3-butyl imidazole system plating solution of 1000 grams.
Embodiment 4:
Indium metal (In): 80
Anhydrous indium chloride InCl 3: 293
Chloridization 1-methyl-3-butyl imidazole (MBIC): 350
Ethylene glycol: 220
Gelatin: 2
Dextrin: 25
Sodium-chlor (NaCl): 30
Get said components, be mixed into the dissipated metal indium chloride/chloridization 1-methyl-3-butyl imidazole system plating solution of 1000 grams.
Embodiment 5:
Indium metal (In): 90
Anhydrous indium chloride InCl 3: 328
Chloridization 1-methyl-3-butyl imidazole (MBIC): 260
Ethylene glycol: 250
Gelatin: 2
Dextrin: 40
Sodium-chlor (NaCl): 30
Get said components, be mixed into the dissipated metal indium chloride/chloridization 1-methyl-3-butyl imidazole system plating solution of 1000 grams.
Embodiment 6:
Indium metal (In): 100
Anhydrous indium chloride InCl 3: 318
Chloridization 1-methyl-3-butyl imidazole (MBIC): 260
Ethylene glycol: 250
Gelatin: 2
Dextrin: 30
Sodium-chlor (NaCl): 40
Get said components, be mixed into the dissipated metal indium chloride/chloridization 1-methyl-3-butyl imidazole system plating solution of 1000 grams.
Embodiment 7:
Indium metal (In): 80
Anhydrous indium chloride InCl 3: 357
Chloridization 1-methyl-3-butyl imidazole (MBIC): 180
Ethylene glycol: 300
Gelatin: 3
Dextrin: 30
Sodium-chlor (NaCl): 50
Get said components, be mixed into the dissipated metal indium chloride/chloridization 1-methyl-3-butyl imidazole system plating solution of 1000 grams.
Embodiment 8:
Indium metal (In): 90
Anhydrous indium chloride InCl 3: 360
Chloridization 1-methyl-3-butyl imidazole (MBIC): 189
Ethylene glycol: 280
Gelatin: 1
Dextrin: 30
Sodium-chlor (NaCl): 50
Get said components, be mixed into the dissipated metal indium chloride/chloridization 1-methyl-3-butyl imidazole system plating solution of 1000 grams.
Embodiment 9:
Indium metal (In): 100
Anhydrous indium chloride InCl 3: 430
Chloridization 1-methyl-3-butyl imidazole (MBIC): 219
Ethylene glycol: 200
Gelatin: 1
Dextrin: 20
Sodium-chlor (NaCl): 30
Get said components, be mixed into the dissipated metal indium chloride/chloridization 1-methyl-3-butyl imidazole system plating solution of 1000 grams.
Embodiment 10:
Indium metal (In): 90
Anhydrous indium chloride InCl 3: 347
Chloridization 1-methyl-3-butyl imidazole (MBIC): 270
Ethylene glycol: 230
Gelatin: 3
Dextrin: 20
Sodium-chlor (NaCl): 40
Get said components, be mixed into the dissipated metal indium chloride/chloridization 1-methyl-3-butyl imidazole system plating solution of 1000 grams.
When electroplating, require pH value of solution with the present invention: 2.0～2.5, solution temperature (℃): 20～80, current density (A/dm 2): 2.0～10.0.

Claims (10)

1. dissipated metal indium chloride/chloridization 1-methyl-3-butyl imidazole system plating solution is characterized in that: dissipated metal InCl 3The prescription of/MBIC system plating solution is made up of following:
Indium metal (In): 80～100gkg -1
Anhydrous indium chloride InCl 3: 230～430gkg -1
Chloridization 1-methyl-3-butyl imidazole (MBIC): 180～360gkg -1
Ethylene glycol: 200～300gkg -1
Gelatin: 1～3gkg -1
Dextrin: 20～40gkg -1
Sodium-chlor (NaCl): 30～50gkg -1
2. dissipated metal indium chloride/chloridization 1-methyl as claimed in claim 1-3-butyl imidazole system plating solution is characterized in that: dissipated metal InCl 3The prescription of/MBIC system plating solution is made up of following:
Indium metal (In): 80gkg -1
Anhydrous indium chloride InCl 3: 340gkg -1
Chloridization 1-methyl-3-butyl imidazole (MBIC): 269gkg -1
Ethylene glycol: 250gkg -1
Gelatin: 1gkg -1
Dextrin: 20gkg -1
Sodium-chlor (NaCl): 40gkg -1
3. dissipated metal indium chloride/chloridization 1-methyl as claimed in claim 1-3-butyl imidazole system plating solution is characterized in that: dissipated metal InCl 3The prescription of/MBIC system plating solution is made up of following:
Indium metal (In): 90gkg -1
Anhydrous indium chloride InCl 3: 293gkg -1
Chloridization 1-methyl-3-butyl imidazole (MBIC): 360gkg -1
Ethylene glycol: 200gkg -1
Gelatin: 2gkg -1
Dextrin: 25gkg -1
Sodium-chlor (NaCl): 30gkg -1
4. dissipated metal indium chloride/chloridization 1-methyl as claimed in claim 1-3-butyl imidazole system plating solution is characterized in that: dissipated metal InCl 3The prescription of/MBIC system plating solution is made up of following:
Indium metal (In): 100gkg -1
Anhydrous indium chloride InCl 3: 230gkg -1
Chloridization 1-methyl-3-butyl imidazole (MBIC): 277gkg -1
Ethylene glycol: 300gkg -1
Gelatin: 3gkg -1
Dextrin: 40gkg -1
Sodium-chlor (NaCl): 50gkg -1
5. dissipated metal indium chloride/chloridization 1-methyl as claimed in claim 1-3-butyl imidazole system plating solution is characterized in that: dissipated metal InCl 3The prescription of/MBIC system plating solution is made up of following:
Indium metal (In): 80gkg -1
Anhydrous indium chloride InCl 3: 293gkg -1
Chloridization 1-methyl-3-butyl imidazole (MBIC): 350gkg -1
Ethylene glycol: 220gkg -1
Gelatin: 2gkg -1
Dextrin: 25gkg -1
Sodium-chlor (NaCl): 30gkg -1
6. dissipated metal indium chloride/chloridization 1-methyl as claimed in claim 1-3-butyl imidazole system plating solution is characterized in that: dissipated metal InCl 3The prescription of/MBIC system plating solution is made up of following:
Indium metal (In): 90gkg -1
Anhydrous indium chloride InCl 3: 328gkg -1
Chloridization 1-methyl-3-butyl imidazole (MBIC): 260gkg -1
Ethylene glycol: 250gkg -1
Gelatin: 2gkg -1
Dextrin: 40gkg -1
Sodium-chlor (NaCl): 30gkg -1
7. dissipated metal indium chloride/chloridization 1-methyl as claimed in claim 1-3-butyl imidazole system plating solution is characterized in that: dissipated metal InCl 3The prescription of/MBIC system plating solution is made up of following:
Indium metal (In): 100gkg -1
Anhydrous indium chloride InCl 3: 318gkg -1
Chloridization 1-methyl-3-butyl imidazole (MBIC): 260gkg -1
Ethylene glycol: 250gkg -1
Gelatin: 2gkg -1
Dextrin: 30gkg -1
Sodium-chlor (NaCl): 40gkg -1
8. dissipated metal indium chloride/chloridization 1-methyl as claimed in claim 1-3-butyl imidazole system plating solution is characterized in that: dissipated metal InCl 3The prescription of/MBIC system plating solution is made up of following:
Indium metal (In): 80gkg -1
Anhydrous indium chloride InCl 3: 357gkg -1
Chloridization 1-methyl-3-butyl imidazole (MBIC): 180gkg -1
Ethylene glycol: 300gkg -1
Gelatin: 3gkg -1
Dextrin: 30gkg -1
Sodium-chlor (NaCl): 50gkg -1
9. dissipated metal indium chloride/chloridization 1-methyl as claimed in claim 1-3-butyl imidazole system plating solution is characterized in that: dissipated metal InCl 3The prescription of/MBIC system plating solution is made up of following:
Indium metal (In): 90gkg -1
Anhydrous indium chloride InCl 3: 360gkg -1
Chloridization 1-methyl-3-butyl imidazole (MBIC): 189gkg -1
Ethylene glycol: 280gkg -1
Gelatin: 1gkg -1
Dextrin: 30gkg -1
Sodium-chlor (NaCl): 50gkg -1
10. dissipated metal indium chloride/chloridization 1-methyl as claimed in claim 1-3-butyl imidazole system plating solution is characterized in that: dissipated metal InCl 3The prescription of/MBIC system plating solution is made up of following:
Indium metal (In): 100gkg -1
Anhydrous indium chloride InCl 3: 430gkg -1
Chloridization 1-methyl-3-butyl imidazole (MBIC): 219gkg -1
Ethylene glycol: 200gkg -1
Gelatin: 1gkg -1
Dextrin: 20gkg -1
Sodium-chlor (NaCl): 30gkg -1
CN2008100109795A 2008-04-11 2008-04-11 Dissipated metal indium chloride/chloridization 1-methyl-3-butyl imidazole system plating solution Expired - Fee Related CN101270490B (en)

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CN101988210B (en) * 2010-12-03 2013-03-20 沈阳师范大学 Ionic liquid indium chloride/n-butyl pyridine chloride system electroplating solution
CN101994139B (en) * 2010-12-08 2012-07-04 沈阳师范大学 Scattered metal gallium chloride/1-methyl-3-butyliminazole chloride system electroplating solution
CN102061492B (en) * 2010-12-09 2013-03-20 沈阳师范大学 Electroplate liquid based on room temperature ion liquid indium chloride/fluoboric acid 1-methyl-3-butylimidazole system
CN102127782A (en) * 2011-01-18 2011-07-20 上海交通大学 Method for preparing super-hydrophobic indium antimonide film by deposition in ionic liquid
CN102719863A (en) * 2011-01-18 2012-10-10 上海交通大学 Method for depositing and preparing super-hydrophobic indium antimonide thin film from ionic liquid
CN103114316B (en) * 2013-03-01 2015-10-28 沈阳师范大学 A kind of eco-friendly plating gallium electroplate liquid
CN103122471B (en) * 2013-03-01 2015-10-28 沈阳师范大学 A kind of electroplate liquid of non-cyanide plating indium
CN103628100B (en) * 2013-12-09 2016-05-04 沈阳师范大学 A kind of electroplate liquid of indium plating
CN105543911A (en) * 2015-12-29 2016-05-04 沈阳师范大学 Chloride 1-heptyl-3-methylimidazole/nickel chloride system electroplating solution
CN105525314A (en) * 2015-12-29 2016-04-27 沈阳师范大学 Novel nickel chloride/iron chloride system electroplating solution
CN105463532A (en) * 2015-12-29 2016-04-06 沈阳师范大学 Novel electroplating liquid for ferronickel plating
CN105780069A (en) * 2015-12-29 2016-07-20 沈阳师范大学 Chloride 1-hexyl-3-methyl glyoxaline/ferric chloride system electroplating solution

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CN1152444C (en) * 2001-11-09 2004-06-02 华南师范大学 Indium plating method for copper nail of negative current collector of mercury-free alkaline zinc-manganese dioxide battery
CN1635188A (en) * 2003-12-26 2005-07-06 钱敦勇 Method for barrel plating indium on copper pin of battery
CN1766172A (en) * 2005-10-14 2006-05-03 田鹏 Thin electroplating solution of metal indium chloride/1-methyl-3-ethyl imidazole chloride

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CN1152444C (en) * 2001-11-09 2004-06-02 华南师范大学 Indium plating method for copper nail of negative current collector of mercury-free alkaline zinc-manganese dioxide battery
CN1635188A (en) * 2003-12-26 2005-07-06 钱敦勇 Method for barrel plating indium on copper pin of battery
CN1766172A (en) * 2005-10-14 2006-05-03 田鹏 Thin electroplating solution of metal indium chloride/1-methyl-3-ethyl imidazole chloride

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