CN102061492B - Electroplate liquid based on room temperature ion liquid indium chloride/fluoboric acid 1-methyl-3-butylimidazole system - Google Patents

Electroplate liquid based on room temperature ion liquid indium chloride/fluoboric acid 1-methyl-3-butylimidazole system Download PDF

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Publication number
CN102061492B
CN102061492B CN 201010580932 CN201010580932A CN102061492B CN 102061492 B CN102061492 B CN 102061492B CN 201010580932 CN201010580932 CN 201010580932 CN 201010580932 A CN201010580932 A CN 201010580932A CN 102061492 B CN102061492 B CN 102061492B
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methyl
room temperature
tetrafluoroboric acid
indium chloride
butyl imidazole
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CN102061492A (en
Inventor
田鹏
刘丽艳
黄涛
鲁捷
于龙
毛媚
吕烨
赵婷婷
韩笑
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Shenyang Normal University
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Shenyang Normal University
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Abstract

The invention relates to an electroplate liquid (g.kg<-1>) based on a room temperature ion liquid indium chloride/fluoboric acid 1-methyl-3-butylimidazole system, comprising the following components: 940-960 of fluoboric acid 1-methyl-3-butylimidazole (MBIBF4), 10-30 of anhydrous indium chloride, 10-20 of metal indium, 1-3 of glutin, 1-2 of dextrine and 10-30 of sodium chloride (NaCl). The room temperature ion liquid is a novel green solvent, thus indium plating solution prepared by the rare metal room temperature ion liquid has specific characteristics such as low melting point, adjustable Lewis acidity, good conductivity, negligible vapor pressure, wide use temperature, special solubility and the like. The indium plating solution does not has the problems such as hydration, hydrolysis, hydrogen evolution and the like, and has the performances which a green solvent possess, such as no corrosion, small pollution and the like.

Description

Ionic liquid at room temperature indium chloride/Tetrafluoroboric acid 1-methyl-3-butyl imidazole system plating solution
Technical field: the present invention relates to a kind of electroplate liquid, especially a kind of ionic liquid at room temperature indium chloride/Tetrafluoroboric acid 1-methyl-3-butyl imidazole system plating solution.
Background technology: from the purposes of indium, its elemental metals and alloy have many properties, it is the propping material of current new and high technology, become especially indispensable brand-new material in the sophisticated technology fields such as nuclear power, aerospace, satellite communication, the energy of the industry such as metallurgy, machinery, chemical industry, light industry, weaving, electronics and medicine, the production of these materials and processing is too busy to get away high pure metal indium all.The development of high pure metal indium and exploitation are urgent problems, traditional smelting, refining and alloy preparation method can not satisfy the current needs of producing dissipated metal and alloy thereof fully, and also there is shortcoming in various degree in traditional method, as high-temperature operation, energy consumption are high, environmental pollution is serious etc., therefore need to seek a kind of new method.Ionic liquid at room temperature is a kind of green solvent, has wider electrochemical window, at room temperature can obtain the ability galvanic deposit obtains in high-temperature molten salt metal and alloy, but not have the such severe corrosive of high-temperature molten salt; Simultaneously, galvanic deposit can obtain the metal that great majority obtain in the aqueous solution in ionic liquid, not side reaction, thereby the metal quality that obtains is better.The above-mentioned characteristic of ionic liquid and good electric conductivity thereof, low vapour pressure make it to become the brand-new liquid in the galvanic deposit research.Therefore, the investigator also need carry out a large amount of effort, seeks suitable electrolytic solution, enlarges experimental size, the process of industrialization of speeding-up ion liquid galvanic deposit dissipated metal and alloy thereof, the range of application of raising dissipated metal and alloy thereof.
Summary of the invention: for above-mentioned the deficiencies in the prior art, the invention provides a kind of ionic liquid at room temperature indium chloride/Tetrafluoroboric acid 1-methyl-3-butyl imidazole system plating solution.Below indium chloride/Tetrafluoroboric acid 1-methyl-3-butyl imidazole is abbreviated as InCl 3/ MBIBF 4
For achieving the above object, the technical solution used in the present invention is: ionic liquid at room temperature InCl 3/ MBIBF 4System plating solution (gkg -1) prescription:
Tetrafluoroboric acid 1-methyl-3-butyl imidazole (MBIBF 4): 940～960
Anhydrous indium chloride InCl 3: 10～30
Indium metal (In): 10～20
Gelatin: 1～3
Dextrin: 1～2
Sodium-chlor (NaCl): 10～30
Ionic liquid at room temperature is as a kind of emerging green solvent, utilize the plating solution of indium of dissipated metal ionic liquid at room temperature development, have some unique performances, such as lower fusing point, adjustable Lewis acidity, good electroconductibility, negligible vapour pressure, wider use temperature and special solvability etc.There are not the problems such as aquation, hydrolysis, liberation of hydrogen in this plating solution of indium, and having not, burn into pollutes the little character that waits green solvent to possess.
Embodiment:
Use raw material: high-pure anhydrous indium chloride (InCl 3) (the safe scientific ﹠ technical corporation of Liuzhou indium, purity 99.99%), be kept at P 2O 5Moisture eliminator in, further purify before the use; Tetrafluoroboric acid 1-methyl-3-butyl imidazole (purity 99%) uses front twice recrystallization.Indium (In) (purity 99.99%).Ethylene glycol, gelatin, dextrin, sodium-chlor (NaCl).
Embodiment 1:
Tetrafluoroboric acid 1-methyl-3-butyl imidazole (MBIBF 4): 940
Anhydrous indium chloride InCl 3: 30
Indium metal (In): 20
Gelatin: 1
Dextrin: 2
Sodium-chlor (NaCl): 10
Get said components, be mixed into the 1000 ionic liquid at room temperature indium chloride that restrains/Tetrafluoroboric acid 1-methyl-3-butyl imidazole system plating solutions.
Embodiment 2:
Tetrafluoroboric acid 1-methyl-3-butyl imidazole (MBIBF 4): 940
Anhydrous indium chloride InCl 3: 20
Indium metal (In): 10
Gelatin: 2
Dextrin: 1
Sodium-chlor (NaCl): 30
Get said components, be mixed into the 1000 ionic liquid at room temperature indium chloride that restrains/Tetrafluoroboric acid 1-methyl-3-butyl imidazole system plating solutions.
Embodiment 3:
Tetrafluoroboric acid 1-methyl-3-butyl imidazole (MBIBF 4): 940
Anhydrous indium chloride InCl 3: 20
Indium metal (In): 20
Gelatin: 1
Dextrin: 2
Sodium-chlor (NaCl): 20
Get said components, be mixed into the 1000 ionic liquid at room temperature indium chloride that restrains/Tetrafluoroboric acid 1-methyl-3-butyl imidazole system plating solutions.
Embodiment 4:
Tetrafluoroboric acid 1-methyl-3-butyl imidazole (MBIBF 4): 950
Anhydrous indium chloride InCl 3: 30
Indium metal (In): 10
Gelatin: 2
Dextrin: 1
Sodium-chlor (NaCl): 10
Get said components, be mixed into the 1000 ionic liquid at room temperature indium chloride that restrains/Tetrafluoroboric acid 1-methyl-3-butyl imidazole system plating solutions.
Embodiment 5:
Tetrafluoroboric acid 1-methyl-3-butyl imidazole (MBIBF 4): 950
Anhydrous indium chloride InCl 3: 20
Indium metal (In): 10
Gelatin: 1
Dextrin: 2
Sodium-chlor (NaCl): 20
Get said components, be mixed into the 1000 ionic liquid at room temperature indium chloride that restrains/Tetrafluoroboric acid 1-methyl-3-butyl imidazole system plating solutions.
Embodiment 6:
Tetrafluoroboric acid 1-methyl-3-butyl imidazole (MBIBF 4): 950
Anhydrous indium chloride InCl 3: 10
Indium metal (In): 10
Gelatin: 2
Dextrin: 1
Sodium-chlor (NaCl): 30
Get said components, be mixed into the 1000 ionic liquid at room temperature indium chloride that restrains/Tetrafluoroboric acid 1-methyl-3-butyl imidazole system plating solutions.
Embodiment 7:
Tetrafluoroboric acid 1-methyl-3-butyl imidazole (MBIBF 4): 950
Anhydrous indium chloride InCl 3: 20
Indium metal (In): 20
Gelatin: 1
Dextrin: 2
Sodium-chlor (NaCl): 10
Get said components, be mixed into the 1000 ionic liquid at room temperature indium chloride that restrains/Tetrafluoroboric acid 1-methyl-3-butyl imidazole system plating solutions.
Embodiment 8:
Tetrafluoroboric acid 1-methyl-3-butyl imidazole (MBIBF 4): 960
Anhydrous indium chloride InCl 3: 20
Indium metal (In): 10
Gelatin: 1
Dextrin: 2
Sodium-chlor (NaCl): 10
Get said components, be mixed into the 1000 ionic liquid at room temperature indium chloride that restrains/Tetrafluoroboric acid 1-methyl-3-butyl imidazole system plating solutions.
Embodiment 9:
Tetrafluoroboric acid 1-methyl-3-butyl imidazole (MBIBF 4): 960
Anhydrous indium chloride InCl 3: 10
Indium metal (In): 10
Gelatin: 1
Dextrin: 2
Sodium-chlor (NaCl): 20
Get said components, be mixed into the 1000 ionic liquid at room temperature indium chloride that restrains/Tetrafluoroboric acid 1-methyl-3-butyl imidazole system plating solutions.
Embodiment 10:
Tetrafluoroboric acid 1-methyl-3-butyl imidazole (MBIBF 4): 960
Anhydrous indium chloride InCl 3: 20
Indium metal (In): 10
Gelatin: 2
Dextrin: 1
Sodium-chlor (NaCl): 10
Get said components, be mixed into the 1000 ionic liquid at room temperature indium chloride that restrains/Tetrafluoroboric acid 1-methyl-3-butyl imidazole system plating solutions.
When electroplating with the present invention, require pH value of solution: 3.0～6.5, solution temperature (℃): 20～50, current density (A/dm 2): 3.0～8.0.

Claims (10)

1. ionic liquid at room temperature indium chloride/Tetrafluoroboric acid 1-methyl-3-butyl imidazole system plating solution, it is characterized in that: the prescription of ionic liquid at room temperature indium chloride/Tetrafluoroboric acid 1-methyl-3-butyl imidazole system plating solution is comprised of following:
Tetrafluoroboric acid 1-methyl-3-butyl imidazole: 940～960gkg -1
Anhydrous indium chloride InCl 3: 10～30gkg -1
Indium metal: 10～20gkg -1
Gelatin: 1～3gkg -1
Dextrin: 1～2gkg -1
Sodium-chlor: 10～30gkg -1
2. ionic liquid at room temperature indium chloride as claimed in claim 1/Tetrafluoroboric acid 1-methyl-3-butyl imidazole system plating solution, it is characterized in that: the prescription of ionic liquid at room temperature indium chloride/Tetrafluoroboric acid 1-methyl-3-butyl imidazole system plating solution is comprised of following:
Tetrafluoroboric acid 1-methyl-3-butyl imidazole: 940gkg -1
Anhydrous indium chloride InCl 3: 30gkg -1
Indium metal: 20gkg -1
Gelatin: 1gkg -1
Dextrin: 2gkg -1
Sodium-chlor: 10gkg -1
3. ionic liquid at room temperature indium chloride as claimed in claim 1/Tetrafluoroboric acid 1-methyl-3-butyl imidazole system plating solution, it is characterized in that: the prescription of ionic liquid at room temperature indium chloride/Tetrafluoroboric acid 1-methyl-3-butyl imidazole system plating solution is comprised of following:
Tetrafluoroboric acid 1-methyl-3-butyl imidazole (MBIBF 4): 940gkg -1
Anhydrous indium chloride InCl 3: 20gkg -1
Indium metal: 10gkg -1
Gelatin: 2gkg -1
Dextrin: 1gkg -1
Sodium-chlor: 30gkg -1
4. ionic liquid at room temperature indium chloride as claimed in claim 1/Tetrafluoroboric acid 1-methyl-3-butyl imidazole system plating solution, it is characterized in that: the prescription of ionic liquid at room temperature indium chloride/Tetrafluoroboric acid 1-methyl-3-butyl imidazole system plating solution is comprised of following:
Tetrafluoroboric acid 1-methyl-3-butyl imidazole: 940gkg -1
Anhydrous indium chloride InCl 3: 20gkg -1
Indium metal: 20gkg -1
Gelatin: 1gkg -1
Dextrin: 2gkg -1
Sodium-chlor: 20gkg -1
5. ionic liquid at room temperature indium chloride as claimed in claim 1/Tetrafluoroboric acid 1-methyl-3-butyl imidazole system plating solution, it is characterized in that: the prescription of ionic liquid at room temperature indium chloride/Tetrafluoroboric acid 1-methyl-3-butyl imidazole system plating solution is comprised of following:
Tetrafluoroboric acid 1-methyl-3-butyl imidazole: 950gkg -1
Anhydrous indium chloride InCl 3: 30gkg -1
Indium metal: 10gkg -1
Gelatin: 2gkg -1
Dextrin: 1gkg -1
Sodium-chlor: 10gkg -1
6. ionic liquid at room temperature indium chloride as claimed in claim 1/Tetrafluoroboric acid 1-methyl-3-butyl imidazole system plating solution, it is characterized in that: the prescription of ionic liquid at room temperature indium chloride/Tetrafluoroboric acid 1-methyl-3-butyl imidazole system plating solution is comprised of following:
Tetrafluoroboric acid 1-methyl-3-butyl imidazole: 950gkg -1
Anhydrous indium chloride InCl 3: 20
Indium metal: 10gkg -1
Gelatin: 1gkg -1
Dextrin: 2gkg -1
Sodium-chlor: 20gkg -1
7. ionic liquid at room temperature indium chloride as claimed in claim 1/Tetrafluoroboric acid 1-methyl-3-butyl imidazole system plating solution, it is characterized in that: the prescription of ionic liquid at room temperature indium chloride/Tetrafluoroboric acid 1-methyl-3-butyl imidazole system plating solution is comprised of following:
Tetrafluoroboric acid 1-methyl-3-butyl imidazole: 950gkg -1
Anhydrous indium chloride InCl 3: 10gkg -1
Indium metal: 10gkg -1
Gelatin: 2gkg -1
Dextrin: 1gkg -1
Sodium-chlor: 30gkg -1
8. ionic liquid at room temperature indium chloride as claimed in claim 1/Tetrafluoroboric acid 1-methyl-3-butyl imidazole system plating solution, it is characterized in that: the prescription of ionic liquid at room temperature indium chloride/Tetrafluoroboric acid 1-methyl-3-butyl imidazole system plating solution is comprised of following:
Tetrafluoroboric acid 1-methyl-3-butyl imidazole: 950gkg -1
Anhydrous indium chloride InCl 3: 20gkg -1
Indium metal: 20gkg -1
Gelatin: 1gkg -1
Dextrin: 2gkg -1
Sodium-chlor: 10gkg -1
9. ionic liquid at room temperature indium chloride as claimed in claim 1/Tetrafluoroboric acid 1-methyl-3-butyl imidazole system plating solution, it is characterized in that: the prescription of ionic liquid at room temperature indium chloride/Tetrafluoroboric acid 1-methyl-3-butyl imidazole system plating solution is comprised of following:
Tetrafluoroboric acid 1-methyl-3-butyl imidazole: 960gkg -1
Anhydrous indium chloride InCl 3: 20gkg -1
Indium metal: 10gkg -1
Gelatin: 1gkg -1
Dextrin: 2gkg -1
Sodium-chlor: 10gkg -1
10. ionic liquid at room temperature indium chloride as claimed in claim 1/Tetrafluoroboric acid 1-methyl-3-butyl imidazole system plating solution, it is characterized in that: the prescription of ionic liquid at room temperature indium chloride/Tetrafluoroboric acid 1-methyl-3-butyl imidazole system plating solution is comprised of following:
Tetrafluoroboric acid 1-methyl-3-butyl imidazole: 960gkg -1
Anhydrous indium chloride InCl 3: 10gkg -1
Indium metal: 10gkg -1
Gelatin: 1gkg -1
Dextrin: 2gkg -1
Sodium-chlor: 20gkg -1
CN 201010580932 2010-12-09 2010-12-09 Electroplate liquid based on room temperature ion liquid indium chloride/fluoboric acid 1-methyl-3-butylimidazole system Expired - Fee Related CN102061492B (en)

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CN103122471B (en) * 2013-03-01 2015-10-28 沈阳师范大学 A kind of electroplate liquid of non-cyanide plating indium
CN103628100B (en) * 2013-12-09 2016-05-04 沈阳师范大学 A kind of electroplate liquid of indium plating
CN104141151A (en) * 2014-08-06 2014-11-12 哈尔滨工业大学 Method for forming metal simple substance through ionic liquid in electrolytic deposition mode
CN105525314A (en) * 2015-12-29 2016-04-27 沈阳师范大学 Novel nickel chloride/iron chloride system electroplating solution
CN105463532A (en) * 2015-12-29 2016-04-06 沈阳师范大学 Novel electroplating liquid for ferronickel plating
CN105780069A (en) * 2015-12-29 2016-07-20 沈阳师范大学 Chloride 1-hexyl-3-methyl glyoxaline/ferric chloride system electroplating solution
CN105543911A (en) * 2015-12-29 2016-05-04 沈阳师范大学 Chloride 1-heptyl-3-methylimidazole/nickel chloride system electroplating solution

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CN101054698A (en) * 2007-02-09 2007-10-17 上海大学 Method of pre-electrodepositing copper on zinc surface by ion liquid
CN101270490A (en) * 2008-04-11 2008-09-24 沈阳师范大学 Dissipated metal indium chloride/chloridization 1-methyl-3-butyl imidazole system plating solution
CN101876082A (en) * 2010-05-13 2010-11-03 沈阳师范大学 Ionic liquid gallium chloride/1-methyl-3-ethylimidazole chloride system electroplating solution

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101054698A (en) * 2007-02-09 2007-10-17 上海大学 Method of pre-electrodepositing copper on zinc surface by ion liquid
CN101270490A (en) * 2008-04-11 2008-09-24 沈阳师范大学 Dissipated metal indium chloride/chloridization 1-methyl-3-butyl imidazole system plating solution
CN101876082A (en) * 2010-05-13 2010-11-03 沈阳师范大学 Ionic liquid gallium chloride/1-methyl-3-ethylimidazole chloride system electroplating solution

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