CN1766172A - Thin electroplating solution of metal indium chloride/1-methyl-3-ethyl imidazole chloride - Google Patents

Thin electroplating solution of metal indium chloride/1-methyl-3-ethyl imidazole chloride Download PDF

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CN1766172A
CN1766172A CN 200510047404 CN200510047404A CN1766172A CN 1766172 A CN1766172 A CN 1766172A CN 200510047404 CN200510047404 CN 200510047404 CN 200510047404 A CN200510047404 A CN 200510047404A CN 1766172 A CN1766172 A CN 1766172A
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methyl
indium
metal
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CN100427647C (en
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田鹏
黄涛
张囝囡
刘奂昕
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Abstract

The dispersed metal indium chloride/ 1-methyl-3-ethyl imidazole chloride system electroplate liquid (g.kg-1) comprises: 60-120 metal indium, 340-540 InCl3 of anhydrous indium chloride, 150-350 1-methyl-3-ethyl imidazole chloride, 60-80 dextrin, 40-60 KCN, and 20-50 NaCl. This invention has low melting point and adjustable Lewis acidity and well conductivity. This product has no the problems such as hydration and hydrolysis, has properties as green solvent, and the indium purity can achieve 99.999% when plating indium.

Description

Dissipated metal indium chloride/chloridization 1-methyl-3-ethyl imidazol(e) system plating solution
Technical field: the present invention relates to a kind of electroplate liquid, especially a kind of dissipated metal indium chloride/chloridization 1-methyl-3-ethyl imidazol(e) system plating solution.
Background technology: indium is a kind of dissipated metal, and the abundance in the earth's crust is very low, is approximately 0.1 μ gg -1From the purposes of indium, mainly concentrate on aspects such as semi-conductor, transparent conducting coating (ITO), electron device, organometallic compound, and the production of these materials and processing all be unable to do without the high pure metal indium; As requiring the product foreign matter content to be no more than 10 μ gg in electron device, the organometallic compound -1, indium is as the IIIA group iii v compound semiconductor material, in the finished product element about 10 19Occur a hetero atom in the individual IIIA compounds of group atom, this is less than 0.01 μ gg with regard to requiring the foreign matter content in the pure phosphide material -1The highly purified indium of these material requires is as raw material, and the purity of general requirement indium reaches 99.999%, even requires to reach more than 99.9999%.And the smart indium that China produces at present also is 99.99%.Therefore, the development of high pure metal indium and exploitation are urgent problems.The production of high purity indium mainly is to produce with electrolytic refining process at home.The plating solution of indium has prussiate type, sulfate type, fluoroboric acid type, dithiocarbamic acid type etc., may occur liberation of hydrogen effect, hydrolysis effect and emulsion etc. in electrolysis, therefore, and must strict composition and the electrolytic condition of controlling electrolytic solution.
Summary of the invention:, the invention provides a kind of dissipated metal InCl at above-mentioned the deficiencies in the prior art 3/ EMIC system plating solution, indium purity can reach 99.999%.Below indium chloride/chloridization 1-methyl-3-ethyl imidazol(e) is abbreviated as InCl 3/ EMIC.
For achieving the above object, the technical solution used in the present invention is: dissipated metal InCl 3/ EMIC system plating solution (gkg -1) prescription:
Indium metal (In): 60～120
Anhydrous indium chloride InCl 3: 340～540
Chlorination 1-methyl-3-ethyl imidazol(e) (EMIC): 150～350
Dextrin: 60～80
Potassium cyanide (KCN): 40～60
Sodium-chlor (NaCl): 30～50
Utilize the plating solution of indium of dissipated metal ionic liquid at room temperature development, have some particular performances, as lower fusing point, adjustable Lewis acidity, good electrical conductivity, negligible vapour pressure, the use temperature of broad and special solvability etc.There are not problems such as aquation, hydrolysis, liberation of hydrogen in this plating solution of indium, and having not, burn into pollutes the little character that waits green solvent to possess.
With this electroplate liquid indium plating, smart indium quality increases substantially, and the purity of indium reaches 99.999%.
Embodiment:
Use raw material: high-pure anhydrous indium chloride (InCl 3) (the safe scientific ﹠ technical corporation of Liuzhou indium, purity 99.99%), be kept at P 2O 5Moisture eliminator in, further purify before the use.Chlorination 1-methyl-3-ethyl imidazol(e) (EMIC) (Aldrich company, purity 98%) is not further purified before the use.Indium (In) (purity 99.99%).Dextrin, potassium cyanide (KCN), sodium-chlor (NaCl).
Embodiment 1:
Indium metal (In): 90 grams
Anhydrous indium chloride InCl 3: 500 grams
Chlorination 1-methyl-3-ethyl imidazol(e) (EMIC): 280 grams
Dextrin: 60 grams
Potassium cyanide (KCN): 40 grams
Sodium-chlor (NaCl): 30 grams
Get said components, be mixed into the dissipated metal indium chloride/chloridization 1-methyl-3-ethyl imidazol(e) system plating solution of 1000 grams.
Embodiment 2:
Indium metal (In): 60 grams
Anhydrous indium chloride InCl 3: 530 grams
Chlorination 1-methyl-3-ethyl imidazol(e) (EMIC): 260 grams
Dextrin: 70 grams
Potassium cyanide (KCN): 50 grams
Sodium-chlor (NaCl): 30 grams
Get said components, be mixed into the dissipated metal indium chloride/chloridization 1-methyl-3-ethyl imidazol(e) system plating solution of 1000 grams.
Embodiment 3:
Indium metal (In): 100 grams
Anhydrous indium chloride InCl 3: 400 grams
Chlorination 1-methyl-3-ethyl imidazol(e) (EMIC): 330 grams
Dextrin: 80 grams
Potassium cyanide (KCN): 50 grams
Sodium-chlor (NaCl): 40 grams
Get said components, be mixed into the dissipated metal indium chloride/chloridization 1-methyl-3-ethyl imidazol(e) system plating solution of 1000 grams.
Embodiment 4:
Indium metal (In): 115 grams
Anhydrous indium chloride InCl 3: 385 grams
Chlorination 1-methyl-3-ethyl imidazol(e) (EMIC): 340 grams
Dextrin: 70 grams
Potassium cyanide (KCN): 55 grams
Sodium-chlor (NaCl): 35 grams
Get said components, be mixed into the dissipated metal indium chloride/chloridization 1-methyl-3-ethyl imidazol(e) system plating solution of 1000 grams.
Embodiment 5:
Indium metal (In): 120 grams
Anhydrous indium chloride InCl 3: 380 grams
Chlorination 1-methyl-3-ethyl imidazol(e) (EMIC): 345 grams
Dextrin: 65 grams
Potassium cyanide (KCN): 45 grams
Sodium-chlor (NaCl): 45 grams
Get said components, be mixed into the dissipated metal indium chloride/chloridization 1-methyl-3-ethyl imidazol(e) system plating solution of 1000 grams.
Embodiment 6:
Indium metal (In): 120 grams
Anhydrous indium chloride InCl 3: 340 grams
Chlorination 1-methyl-3-ethyl imidazol(e) (EMIC): 350 grams
Dextrin: 80 grams
Potassium cyanide (KCN): 60 grams
Sodium-chlor (NaCl): 50 grams
Get said components, be mixed into the dissipated metal indium chloride/chloridization 1-methyl-3-ethyl imidazol(e) system plating solution of 1000 grams.
Embodiment 7:
Indium metal (In): 70 grams
Anhydrous indium chloride InCl 3: 540 grams
Chlorination 1-methyl-3-ethyl imidazol(e) (EMIC): 240 grams
Dextrin: 75 grams
Potassium cyanide (KCN): 40 grams
Sodium-chlor (NaCl): 35 grams
Get said components, be mixed into the dissipated metal indium chloride/chloridization 1-methyl-3-ethyl imidazol(e) system plating solution of 1000 grams.
Embodiment 8:
Indium metal (In): 120 grams
Anhydrous indium chloride InCl 3: 540 grams
Chlorination 1-methyl-3-ethyl imidazol(e) (EMIC): 150 grams
Dextrin: 80 grams
Potassium cyanide (KCN): 60 grams
Sodium-chlor (NaCl): 50 grams
Get said components, be mixed into the dissipated metal indium chloride/chloridization 1-methyl-3-ethyl imidazol(e) system plating solution of 1000 grams.
Embodiment 9:
Indium metal (In): 80 grams
Anhydrous indium chloride InCl 3: 520 grams
Chlorination 1-methyl-3-ethyl imidazol(e) (EMIC): 250 grams
Dextrin: 70 grams
Potassium cyanide (KCN): 45 grams
Sodium-chlor (NaCl): 35 grams
Get said components, be mixed into the dissipated metal indium chloride/chloridization 1-methyl-3-ethyl imidazol(e) system plating solution of 1000 grams.
Embodiment 10:
Indium metal (In): 115 grams
Anhydrous indium chloride InCl 3: 525 grams
Chlorination 1-methyl-3-ethyl imidazol(e) (EMIC): 180 grams
Dextrin: 80 grams
Potassium cyanide (KCN): 55 grams
Sodium-chlor (NaCl): 45 grams
Get said components, be mixed into the dissipated metal indium chloride/chloridization 1-methyl-3-ethyl imidazol(e) system plating solution of 1000 grams.
Embodiment 11:
Indium metal (In): 110 grams
Anhydrous indium chloride InCl 3: 510 grams
Chlorination 1-methyl-3-ethyl imidazol(e) (EMIC): 200 grams
Dextrin: 75 grams
Potassium cyanide (KCN): 60 grams
Sodium-chlor (NaCl): 45 grams
Get said components, be mixed into the dissipated metal indium chloride/chloridization 1-methyl-3-ethyl imidazol(e) system plating solution of 1000 grams.
When electroplating, require pH value of solution with the present invention: 2.0～2.5, solution temperature (℃): 40～60, current density (A/dm 2): 2.0～8.0.

Claims (10)

1, dissipated metal indium chloride/chloridization 1-methyl-3-ethyl imidazol(e) system plating solution is characterized in that: dissipated metal InCl 3/ EMIC system plating solution (gkg -1) prescription form by following:
Indium metal (In): 60～120
Anhydrous indium chloride InCl 3: 340～540
Chlorination 1-methyl-3-ethyl imidazol(e) (EMIC): 150～350
Dextrin: 60～80
Potassium cyanide (KCN): 40～60
Sodium-chlor (NaCl): 30～50.
2, dissipated metal indium chloride/chloridization 1-methyl as claimed in claim 1-3-ethyl imidazol(e) system plating solution is characterized in that: dissipated metal InCl 3/ EMIC system plating solution (gkg -1) prescription form by following:
Indium metal (In): 90 grams
Anhydrous indium chloride InCl 3: 500 grams
Chlorination 1-methyl-3-ethyl imidazol(e) (EMIC): 280 grams
Dextrin: 60 grams
Potassium cyanide (KCN): 40 grams
Sodium-chlor (NaCl): 30 grams.
3, dissipated metal indium chloride/chloridization 1-methyl as claimed in claim 1-3-ethyl imidazol(e) system plating solution is characterized in that: dissipated metal InCl 3/ EMIC system plating solution (gkg -1) prescription form by following:
Indium metal (In): 100 grams
Anhydrous indium chloride InCl 3: 400 grams
Chlorination 1-methyl-3-ethyl imidazol(e) (EMIC): 330 grams
Dextrin: 80 grams
Potassium cyanide (KCN): 50 grams
Sodium-chlor (NaCl): 40 grams.
4, dissipated metal indium chloride/chloridization 1-methyl as claimed in claim 1-3-ethyl imidazol(e) system plating solution is characterized in that: dissipated metal InCl 3/ EMIC system plating solution (gkg -1) prescription form by following:
Indium metal (In): 115 grams
Anhydrous indium chloride InCl 3: 385 grams
Chlorination 1-methyl-3-ethyl imidazol(e) (EMIC): 340 grams
Dextrin: 70 grams
Potassium cyanide (KCN): 55 grams
Sodium-chlor (NaCl): 35 grams.
5, dissipated metal indium chloride/chloridization 1-methyl as claimed in claim 1-3-ethyl imidazol(e) system plating solution is characterized in that: dissipated metal InCl 3/ EMIC system plating solution (gkg -1) prescription form by following:
Indium metal (In): 120 grams
Anhydrous indium chloride InCl 3: 380 grams
Chlorination 1-methyl-3-ethyl imidazol(e) (EMIC): 345 grams
Dextrin: 65 grams
Potassium cyanide (KCN): 45 grams
Sodium-chlor (NaCl): 45 grams.
6, dissipated metal indium chloride/chloridization 1-methyl as claimed in claim 1-3-ethyl imidazol(e) system plating solution is characterized in that: dissipated metal InCl 3/ EMIC system plating solution (gkg -1) prescription form by following:
Indium metal (In): 120 grams
Anhydrous indium chloride InCl 3: 340 grams
Chlorination 1-methyl-3-ethyl imidazol(e) (EMIC): 350 grams
Dextrin: 80 grams
Potassium cyanide (KCN): 60 grams
Sodium-chlor (NaCl): 50 grams.
7, dissipated metal indium chloride/chloridization 1-methyl as claimed in claim 1-3-ethyl imidazol(e) system plating solution is characterized in that: dissipated metal InCl 3/ EMIC system plating solution (gkg -1) prescription form by following:
Indium metal (In): 70 grams
Anhydrous indium chloride InCl 3: 540 grams
Chlorination 1-methyl-3-ethyl imidazol(e) (EMIC): 240 grams
Dextrin: 75 grams
Potassium cyanide (KCN): 40 grams
Sodium-chlor (NaCl): 35 grams.
8, dissipated metal indium chloride/chloridization 1-methyl as claimed in claim 1-3-ethyl imidazol(e) system plating solution is characterized in that: dissipated metal InCl 3/ EMIC system plating solution (gkg -1) prescription form by following:
Indium metal (In): 120 grams
Anhydrous indium chloride InCl 3: 540 grams
Chlorination 1-methyl-3-ethyl imidazol(e) (EMIC): 150 grams
Dextrin: 80 grams
Potassium cyanide (KCN): 60 grams
Sodium-chlor (NaCl): 50 grams.
9, dissipated metal indium chloride/chloridization 1-methyl as claimed in claim 1-3-ethyl imidazol(e) system plating solution is characterized in that: dissipated metal InCl 3/ EMIC system plating solution (gkg -1) prescription form by following:
Indium metal (In): 80 grams
Anhydrous indium chloride InCl 3: 520 grams
Chlorination 1-methyl-3-ethyl imidazol(e) (EMIC): 250 grams
Dextrin: 70 grams
Potassium cyanide (KCN): 45 grams
Sodium-chlor (NaCl): 35 grams.
10, dissipated metal indium chloride/chloridization 1-methyl as claimed in claim 1-3-ethyl imidazol(e) system plating solution is characterized in that: dissipated metal InCl 3/ EMIC system plating solution (gkg -1) prescription form by following: indium metal (In): 115 the gram
Anhydrous indium chloride InCl 3: 525 grams
Chlorination 1-methyl-3-ethyl imidazol(e) (EMIC): 180 grams
Dextrin: 80 grams
Potassium cyanide (KCN): 55 grams
Sodium-chlor (NaCl): 45 grams.
CNB2005100474047A 2005-10-14 2005-10-14 Thin electroplating solution of metal indium chloride/1-methyl-3-ethyl imidazole chloride Expired - Fee Related CN100427647C (en)

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101270490B (en) * 2008-04-11 2010-04-14 沈阳师范大学 Dissipated metal indium chloride/chloridization 1-methyl-3-butyl imidazole system plating solution
CN101613865B (en) * 2008-04-22 2011-06-08 罗门哈斯电子材料有限公司 Method of replenishing indium ions in indium electroplating compositions
CN102127782A (en) * 2011-01-18 2011-07-20 上海交通大学 Method for preparing super-hydrophobic indium antimonide film by deposition in ionic liquid
CN102719863A (en) * 2011-01-18 2012-10-10 上海交通大学 Method for depositing and preparing super-hydrophobic indium antimonide thin film from ionic liquid
CN108603300A (en) * 2016-01-29 2018-09-28 埃托特克德国有限公司 Aqueous indium or indium alloy plating bath and the method for depositing indium or indium alloy

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Publication number Priority date Publication date Assignee Title
CN101876082B (en) * 2010-05-13 2011-11-16 沈阳师范大学 Ionic liquid gallium chloride/1-methyl-3-ethylimidazole chloride system electroplating solution

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Publication number Priority date Publication date Assignee Title
GB564053A (en) * 1942-06-22 1944-09-11 Gen Motors Corp Improvements in the electrodeposition of indium
GB1176787A (en) * 1968-04-08 1970-01-07 Vandervell Products Ltd Improvements in or relating to Methods of Electrolytically Plating a Substrate With Indium.
JPS54109036A (en) * 1978-02-14 1979-08-27 Nobuyasu Doi Electroplating of indium
JPH0913190A (en) * 1995-06-26 1997-01-14 Yazaki Corp Plating method of indium
CN1152444C (en) * 2001-11-09 2004-06-02 华南师范大学 Indium plating method for copper nail of negative current collector of mercury-free alkaline zinc-manganese dioxide battery

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101270490B (en) * 2008-04-11 2010-04-14 沈阳师范大学 Dissipated metal indium chloride/chloridization 1-methyl-3-butyl imidazole system plating solution
CN101613865B (en) * 2008-04-22 2011-06-08 罗门哈斯电子材料有限公司 Method of replenishing indium ions in indium electroplating compositions
CN102127782A (en) * 2011-01-18 2011-07-20 上海交通大学 Method for preparing super-hydrophobic indium antimonide film by deposition in ionic liquid
CN102719863A (en) * 2011-01-18 2012-10-10 上海交通大学 Method for depositing and preparing super-hydrophobic indium antimonide thin film from ionic liquid
CN108603300A (en) * 2016-01-29 2018-09-28 埃托特克德国有限公司 Aqueous indium or indium alloy plating bath and the method for depositing indium or indium alloy
CN108603300B (en) * 2016-01-29 2021-01-05 埃托特克德国有限公司 Aqueous indium or indium alloy plating bath and method for depositing indium or indium alloy

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