CN1787137A - Electrical contact heat material of copper-diamond with miero additive element silver - Google Patents
Electrical contact heat material of copper-diamond with miero additive element silver Download PDFInfo
- Publication number
- CN1787137A CN1787137A CN 200510010555 CN200510010555A CN1787137A CN 1787137 A CN1787137 A CN 1787137A CN 200510010555 CN200510010555 CN 200510010555 CN 200510010555 A CN200510010555 A CN 200510010555A CN 1787137 A CN1787137 A CN 1787137A
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- CN
- China
- Prior art keywords
- mas
- copper
- silver
- electrical contact
- diamond
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000463 material Substances 0.000 title claims abstract description 26
- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 19
- 239000010432 diamond Substances 0.000 title claims abstract description 19
- 229910052709 silver Inorganic materials 0.000 title claims description 45
- 239000004332 silver Substances 0.000 title claims description 45
- 239000000654 additive Substances 0.000 title claims description 15
- 230000000996 additive effect Effects 0.000 title 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 42
- 229910052802 copper Inorganic materials 0.000 claims abstract description 40
- 239000010949 copper Substances 0.000 claims abstract description 40
- 239000011573 trace mineral Substances 0.000 claims abstract description 7
- 235000013619 trace mineral Nutrition 0.000 claims abstract description 7
- 229910052684 Cerium Inorganic materials 0.000 claims abstract description 4
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 4
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 4
- 229910052746 lanthanum Inorganic materials 0.000 claims abstract description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 46
- 239000000843 powder Substances 0.000 claims description 34
- 239000000203 mixture Substances 0.000 claims description 11
- 239000011159 matrix material Substances 0.000 claims description 4
- 238000005245 sintering Methods 0.000 claims description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 claims description 3
- 239000011651 chromium Substances 0.000 claims description 3
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims description 3
- 229910052758 niobium Inorganic materials 0.000 claims description 3
- 239000010955 niobium Substances 0.000 claims description 3
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 3
- 229910052727 yttrium Inorganic materials 0.000 claims description 3
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 3
- 229910052726 zirconium Inorganic materials 0.000 claims description 3
- 238000003754 machining Methods 0.000 claims description 2
- 210000001161 mammalian embryo Anatomy 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 238000003825 pressing Methods 0.000 claims description 2
- 238000004080 punching Methods 0.000 claims description 2
- 238000005096 rolling process Methods 0.000 claims description 2
- 238000007493 shaping process Methods 0.000 claims description 2
- 230000003068 static effect Effects 0.000 claims description 2
- 230000008018 melting Effects 0.000 abstract 1
- 238000002844 melting Methods 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 238000004663 powder metallurgy Methods 0.000 abstract 1
- 230000003628 erosive effect Effects 0.000 description 2
- 230000004927 fusion Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
Landscapes
- Powder Metallurgy (AREA)
- Contacts (AREA)
Abstract
The invention advances a Cu-diamond electric contact material added with trace element Ag, prepared by powder metallurgy, adding metal Ag in a copper base to improve the conductivity of the material, and adding in diamond in 0.001-1.5(mas)% average grain size 0.1-10 mum, to improve wearability and antiwelding property of the material. And the rest are the trace elements: Zr 0.001-1.5 (mas)%, Ce 0.001-1.5 (mas)%, Cr 0.001-1.5(mas)%, Al 0.001-1.5(mas)%, La 0.001-1.5(mas)%, Yi 0.001-1.5 (mas)%, and Cb 0.001-1.5(mas)%. The diamond has high strength, high hardness, high melting point and good wearability, therefore it effectively improves the electric wearability of the copper base, and combined with the trace elements, has low and stable contact resistance and high antiwelding property, arc burning resistance and longer electric service life. The invention is widely applied to home appliances, electronic apparatuses, relays, contactors, and other electric appliance products.
Description
Technical field
The present invention adopts powder metallurgic method to make a kind of electrical contact material.
Background technology
The demanding electric equipment products of electric property all propose higher requirement to the resistance fusion welding of electrical contact material, anti-electrical arc erosion performance, electric life and cost along with electrical equipment producer release cost is low.In the present disclosed patent family, one class is to be the main Ag-based electrical contact material that divides with silver, another kind of is to be the main Ag-based electrical contact material that divides with copper, with silver is that the main Ag-based electrical contact material electric property that divides is fine, but cost is very high, and be that the main Ag-based electrical contact material cost that divides is low with copper, though electric property can satisfy instructions for use, but still lower than Ag-based electrical contact material.
Technical scheme
The present invention seeks to disclose a kind of copper-copper-diamond electrical contact material that proposes trace additives silver.Adopting " copper-copper-diamond electrical contact material of trace additives silver " of powder metallurgic method preparation, is to have added trace meter silver in the copper matrix, has added 0.001～1.5 (mas) % simultaneously, and particle mean size is the bortz powder of 0.1～10 μ m.Trace meter silver has improved the electric conductivity of material, owing to diamond has high strength, high rigidity, high-melting-point and wear-resistant, combine with trace element to have low and stable contact resistance and high resistance fusion welding, anti-electrical arc erosion ability and higher electric life.Be widely used on the electric equipment products such as household electrical appliance, electronic instrument, relay, contactor, push-button switch and circuit breaker.
Its composition is to add bortz powder and trace element in the copper matrix.
Copper-the copper-diamond electrical contact material of a kind of trace additives silver of the present invention, its composition are to add trace meter silver, bortz powder in the copper matrix;
Its compositing formula is (following is weight ratio):
Bortz powder 0.001～1.5% (mas) %;
Silver 0.001～1.5 (mas) %;
Copper surplus.
The present invention adds other element in above-mentioned prescription.
Compositing formula 1 is (following is weight ratio):
Bortz powder 0.001～1.5% (mas) %;
Silver 0.001～1.5 (mas) %;
Zirconium 0.001～1.5 (mas) %;
Copper surplus.
Compositing formula 2 is (following is weight ratio):
Bortz powder 0.001～1.5% (mas) %;
Silver 0.001～1.5 (mas) %;
Cerium 0.001～1.5 (mas) %;
Copper surplus.
Compositing formula 3 is (following is weight ratio):
Bortz powder 0.001～1.5% (mas) %;
Silver 0.001～1.5 (mas) %;
Chromium 0.001～1.5 (mas) %;
Copper surplus.
Compositing formula 4 is (following is weight ratio):
Bortz powder 0.001～1.5% (mas) %;
Silver 0.001～1.5 (mas) %;
Aluminium 0.001～1.5 (mas) %;
Copper surplus.
Compositing formula 5 is (following is weight ratio):
Bortz powder 0.001～1.5% (mas) %;
Silver 0.001～1.5 (mas) %;
Lanthanum 0.001～1.5 (mas) %;
Copper surplus.
Compositing formula 6 is (following is weight ratio):
Bortz powder 0.001～1.5% (mas) %;
Silver 0.001～1.5 (mas) %;
Yttrium 0.001～1.5 (mas) %;
Copper surplus.
Compositing formula 7 is (following is weight ratio):
Bortz powder 0.001～1.5% (mas) %;
Silver 0.001～1.5 (mas) %;
Niobium 0.001～1.5 (mas) %;
Copper surplus.
Copper-the copper-diamond electrical contact material of a kind of trace additives silver of above-mentioned prescription, its manufacturing process is:
(1) in copper powder, adds argent, bortz powder and add other trace elements to mix powder then even;
(2) in inferior static pressure of the pressure of 10MPa～250MPa or punching block isotactic pressing;
(3) shaping block is in the vacuum degree less than 1000Pa, 800～900 ℃ of following sintering 1～3 hour;
(4) the sintering embryo is squeezed into section bar under 700～900 ℃;
(5) with section rolling or drawing processing;
(6) section bar is carried out machining by the contact size.
Technical implementation way
Embodiment one
Composition proportion (following is weight ratio)
Bortz powder 0.05 (mas) %
Silver 0.01 (mas) %,
Zirconium 0.005 (mas) %,
Copper surplus
Performance
Resistivity: 2.55 μ Ω .cm
Density: 8.65/cm3
Hardness: HB 50-65MPa
Embodiment two
Composition proportion (following is weight ratio)
Bortz powder 0.05 (mas) %
Silver 0.01 (mas) %,
Cerium 0.005 (mas) %,
Copper surplus
Performance
Resistivity: 2.45 μ Ω .cm
Density: 8.8g/cm3
Hardness: HB 75-85MPa
Embodiment three
Composition proportion (following is weight ratio)
Bortz powder 0.05 (mas) %
Silver 0.01 (mas) %,
Chromium 0.005 (mas) %,
Copper surplus
Performance
Resistivity: 2.65 μ Ω .cm
Density: 8.75g/cm3
Hardness: HB 78-88MPa
Embodiment four
Composition proportion (following is weight ratio)
Bortz powder 0.05 (mas) %
Silver 0.01 (mas) %,
Aluminium 0.01 (mas) %,
Copper surplus
Performance
Resistivity: 2.6 μ Ω .cm
Density: 8.75g/cm3
Hardness: HB 70-80MPa
Embodiment five
Composition proportion (following is weight ratio)
Bortz powder 0.05 (mas) %
Silver 0.01 (mas) %,
Lanthanum 0.01 (mas) %,
Copper surplus
Performance
Resistivity: 2.5 μ Ω .cm
Density: 8.75g/cm3
Hardness: HB 60-70MPa
Embodiment six
Composition proportion (following is weight ratio)
Bortz powder 0.05 (mas) %
Silver 0.01 (mas) %,
Yttrium 0.01 (mas) %,
Copper surplus
Performance
Resistivity: 2.42 μ Ω .cm
Density: 8.70g/cm3
Hardness: HB 60-70MPa
Embodiment seven
Composition proportion (following is weight ratio)
Bortz powder 0.05 (mas) %
Silver 0.01 (mas) %,
Niobium 0.01 (mas) %,
Copper surplus
Performance
Resistivity: 2.40 μ Ω .cm
Density: 8.70g/cm3
Hardness: HB 65-75MPa
Embodiment eight
Composition proportion (following is weight ratio)
Bortz powder 0.05 (mas) %
Silver 0.01 (mas) %,
Copper surplus
Performance
Resistivity: 2.20 μ Ω .cm
Density: 8.80g/cm3
Hardness: HB 68-78MPa
Claims (9)
1. copper one copper-diamond electrical contact material of a trace additives silver, its composition are to add trace meter silver, bortz powder in the copper matrix;
Its compositing formula is (following is weight ratio):
Bortz powder 0.001～1.5% (mas) %;
Silver 0.001～1.5 (mas) %;
Copper surplus.
2. copper one copper-diamond electrical contact material of a kind of trace additives silver as claimed in claim 1, its compositing formula are (following is weight ratio):
Bortz powder 0.001～1.5% (mas) %;
Silver 0.001～1.5 (mas) %;
Zirconium 0.001～1.5 (mas) %;
Copper surplus.
3. copper one copper-diamond electrical contact material of a kind of trace additives silver as claimed in claim 1, its compositing formula are (following is weight ratio):
Bortz powder 0.001～1.5% (mas) %;
Silver 0.001～1.5 (mas) %;
Cerium 0.001～1.5 (mas) %;
Copper surplus.
4. copper one copper-diamond electrical contact material of a kind of trace additives silver as claimed in claim 1, its compositing formula are (following is weight ratio):
Bortz powder 0.001～1.5% (mas) %;
Silver 0.001～1.5 (mas) %;
Chromium 0.001～1.5 (mas) %;
Copper surplus.
5. copper one copper-diamond electrical contact material of a kind of trace additives silver as claimed in claim 1, its compositing formula are (following is weight ratio):
Bortz powder 0.001～1.5% (mas) %;
Silver 0.001～1.5 (mas) %;
Aluminium 0.001～1.5 (mas) %;
Copper surplus.
6. copper one copper-diamond electrical contact material of a kind of trace additives silver as claimed in claim 1, its compositing formula are (following is weight ratio):
Bortz powder 0.001～1.5% (mas) %;
Silver 0.001～1.5 (mas) %;
Lanthanum 0.001～1.5 (mas) %;
Copper surplus.
7. copper one copper-diamond electrical contact material of a kind of trace additives silver as claimed in claim 1, its compositing formula are (following is weight ratio):
Bortz powder 0.001～1.5% (mas) %;
Silver 0.001～1.5 (mas) %;
Yttrium 0.001～1.5 (mas) %;
Copper surplus.
8. copper one copper-diamond electrical contact material of a kind of trace additives silver as claimed in claim 1, its compositing formula are (following is weight ratio):
Bortz powder 0.001～1.5% (mas) %;
Silver 0.001～1.5 (mas) %;
Niobium 0.001～1.5 (mas) %;
Copper surplus.
9. copper-the copper-diamond electrical contact material of a kind of trace additives silver as claimed in claim 1, its manufacturing process is:
(1) in copper powder, adds argent, bortz powder and add other trace elements to mix powder then even;
(2) in inferior static pressure of the pressure of 10MPa～250MPa or punching block isotactic pressing;
(3) shaping block is in the vacuum degree less than 1000Pa, 800～900 ℃ of following sintering 1～3 hour;
(4) the sintering embryo is squeezed into section bar under 700～900 ℃;
(5) with section rolling or drawing processing;
(6) section bar is carried out machining by the contact size.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100105555A CN100505125C (en) | 2005-11-18 | 2005-11-18 | Silver doped copper-diamond electrical contact material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100105555A CN100505125C (en) | 2005-11-18 | 2005-11-18 | Silver doped copper-diamond electrical contact material |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1787137A true CN1787137A (en) | 2006-06-14 |
| CN100505125C CN100505125C (en) | 2009-06-24 |
Family
ID=36784550
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2005100105555A Active CN100505125C (en) | 2005-11-18 | 2005-11-18 | Silver doped copper-diamond electrical contact material |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100505125C (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100421246C (en) * | 2006-11-03 | 2008-09-24 | 宁波康强电子股份有限公司 | Bonded copper wire and preparing method thereof |
| CN100428460C (en) * | 2006-11-03 | 2008-10-22 | 宁波康强电子股份有限公司 | Bonded copper wire and preparing method thereof |
| CN100437857C (en) * | 2006-11-24 | 2008-11-26 | 林羽锦 | Machining technique of silver/copper double composite strip material |
| CN101197215B (en) * | 2008-01-02 | 2010-08-04 | 陕西艺林实业有限责任公司 | Nano diamond doped silver based contact material processing method |
| CN101139515B (en) * | 2007-05-18 | 2010-08-18 | 中南大学 | High heat-conductive diamond-copper composite encapsulating material and method for making same |
| CN101070461B (en) * | 2007-05-18 | 2011-04-20 | 中南大学 | Super-high heat-conductive diamond-copper composite package material and production method |
| CN102136376A (en) * | 2011-03-18 | 2011-07-27 | 孔琦琪 | Novel functional contact of low-voltage electrical appliance |
| CN104505136A (en) * | 2014-12-22 | 2015-04-08 | 乐清市长虹电工合金材料有限公司 | Ceramic-shaped niobium copper hard special copper-based alloy electrical contact and preparation method thereof |
-
2005
- 2005-11-18 CN CNB2005100105555A patent/CN100505125C/en active Active
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100421246C (en) * | 2006-11-03 | 2008-09-24 | 宁波康强电子股份有限公司 | Bonded copper wire and preparing method thereof |
| CN100428460C (en) * | 2006-11-03 | 2008-10-22 | 宁波康强电子股份有限公司 | Bonded copper wire and preparing method thereof |
| CN100437857C (en) * | 2006-11-24 | 2008-11-26 | 林羽锦 | Machining technique of silver/copper double composite strip material |
| CN101139515B (en) * | 2007-05-18 | 2010-08-18 | 中南大学 | High heat-conductive diamond-copper composite encapsulating material and method for making same |
| CN101070461B (en) * | 2007-05-18 | 2011-04-20 | 中南大学 | Super-high heat-conductive diamond-copper composite package material and production method |
| CN101197215B (en) * | 2008-01-02 | 2010-08-04 | 陕西艺林实业有限责任公司 | Nano diamond doped silver based contact material processing method |
| CN102136376A (en) * | 2011-03-18 | 2011-07-27 | 孔琦琪 | Novel functional contact of low-voltage electrical appliance |
| CN104505136A (en) * | 2014-12-22 | 2015-04-08 | 乐清市长虹电工合金材料有限公司 | Ceramic-shaped niobium copper hard special copper-based alloy electrical contact and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100505125C (en) | 2009-06-24 |
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Legal Events
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| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| ASS | Succession or assignment of patent right |
Owner name: NI SHUCHUN; APPLICANT Free format text: FORMER OWNER: HARBIN DONGDA HIGH NEW MATERIAL CO., LTD. Effective date: 20080620 |
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| C41 | Transfer of patent application or patent right or utility model | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20080620 Address after: Heilongjiang Province, Harbin City, the Yellow River Road No. 136 champs Lai Court building C room 503 post encoding: 150090 Applicant after: Ni tree spring Co-applicant after: Wang Yingjie Address before: Postal code 8, Dalian Road, cottage Economic Development Zone, Heilongjiang, Harbin: 150060 Applicant before: Harbin Dongdagao New Material Co.,Ltd. |
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| C14 | Grant of patent or utility model | ||
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Assignee: Harbin Dongdagao New Material Co.,Ltd. Assignor: Wang Yingjie|Ni Shuchun Contract record no.: 2011230000249 Denomination of invention: Silver doped copper-diamond electrical contact material Granted publication date: 20090624 License type: Exclusive License Open date: 20060614 Record date: 20110906 |
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| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20160106 Address after: 150060 No. 8 Dalian Road, cottage Development Zone, Harbin, Heilongjiang Patentee after: Harbin Dongdagao New Material Co.,Ltd. Address before: 150090 Heilongjiang Province, Harbin city the Yellow River Road No. 136 champs Lai Court building C room 503 Patentee before: Ni Shuchun Patentee before: Wang Yingjie |