CN101266983A - Pixel structure, display panel, photoelectrical device and its repair method - Google Patents
Pixel structure, display panel, photoelectrical device and its repair method Download PDFInfo
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- CN101266983A CN101266983A CNA200810095520XA CN200810095520A CN101266983A CN 101266983 A CN101266983 A CN 101266983A CN A200810095520X A CNA200810095520X A CN A200810095520XA CN 200810095520 A CN200810095520 A CN 200810095520A CN 101266983 A CN101266983 A CN 101266983A
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Abstract
The invention relates to a pixel structure, a display panel, a photoelectric device and fixing method thereof, wherein the pixel structure comprises a positive element and a pixel electrode. The positive element comprises a patterned semiconductor layer, a grid insulation layer, a grid and a contacting conductor layer. The grid is connected with a scanning line electrically. The grid insulation layer is disposed between the patterned semiconductor layer and the grid. The patterned semiconductor layer comprises a first semiconductor block and a second semiconductor block electrically insulated from each other. The first semiconductor block is connected with the grid. The contacting conductor layer comprises a first contacting conductor block connected with the first semiconductor block, and a second contacting conductor block connected with the second semiconductor block. The second semiconductor block is connected with the data line electrically. The pixel electrode is connected with the first contacting conductor block electrically. When fixing the pixel structure, the fixing position is not limited by position of the pixel electrode. The pixel electrode according to the invention is convenient to fix due to the convenient connection between the grid and the first semiconductor block of the patterned semiconductor layer.
Description
Technical field
The invention relates to a kind of display floater and method for repairing and mending thereof, and particularly relevant for a kind of dot structure and method for repairing and mending thereof.
Background technology
Past cathode ray tube (Cathode Ray Tube, CRT) monopolize the monitor market always, yet because cathode ray tube the bulky and subject under discussion of radiation and consumes energy is arranged can't be satisfied the demand of consumer for light, thin, short, little and low consumpting power.Therefore, have that high image quality, space utilization efficient are good, (Thin FilmTransistor-Liquid Crystal Display TFT-LCD) becomes the main flow in market to the Thin Film Transistor-LCD of low consumpting power, advantageous characteristic such as radiationless gradually.
Thin Film Transistor-LCD (TFT-LCD) mainly is made of thin-film transistor array base-plate, colorful filter array substrate and liquid crystal layer, wherein thin-film transistor array base-plate is that dot structure by a plurality of arrayed is constituted, and each dot structure is made up of a thin-film transistor, a pixel electrode (pixel electrode) and a reservior capacitor (storage capacitor).When the reservior capacitor in the dot structure took place to leak unusually because of particle or dielectric layer broken hole, this dot structure just can become a flaw (dot defect).Yet, abandon these display panels defective if directly scrap, will make that manufacturing cost significantly increases.In general, a dependence improves technology and realizes that zero defect rate is very difficult, so the flaw repairing technique of display panels becomes considerably important.In the prior art, the flaw of display panels is repaired and is adopted laser welding (laser welding) or laser cutting modes such as (laser cutting) to carry out usually.With Thin Film Transistor-LCD (TFT-LCD) is example, and the action of laser welding or cutting is normally carried out after thin film transistor (TFT) array (TFT array) completes.Yet, because the cause of dot structure design is not that each flaw can both be repaired fast, some flaw even be difficult to repair.
Fig. 1 is the dot structure of prior art and the generalized section of repairing the position thereof.Please refer to Fig. 1, known dot structure 100 comprises substrate 110, semiconductor layer 120, gate insulation layer 130, the first metal layer 140, dielectric layer 150, second metal level 160, protective layer 170, flatness layer 180 and transparency conducting layer 190.
The semiconductor layer 120 of above-mentioned patterning is positioned on the substrate 110.Gate insulation layer 130 covers the semiconductor layer 120 of patterning.The first metal layer 140 of patterning is positioned at gate insulation layer 130 tops.Dielectric layer 150 covers the first metal layer 140 and the gate insulation layer 130 of patterning.Dielectric layer 150 has contact hole 152 and contact hole 154 with gate insulation layer 130, to expose part semiconductor layer 120.Second metal level 160 of patterning is positioned on the dielectric layer 150, and second metal level 160 of patterning electrically connects with semiconductor layer 120 via contact hole 152 and contact hole 154.Protective layer 170 is positioned on the dielectric layer 150 and second metal level 160.Flatness layer 180 covers protective layer 170, and flatness layer 180 has opening H with protective layer 170, and opening H exposes part second metal level 160.Transparency conducting layer 190 is positioned on the flatness layer 180, and transparency conducting layer 190 electrically connects via the contact hole H and second metal level 160.Fig. 1 as can be known, the switch element in the dot structure 100 is low temperature polycrystalline silicon (Low TemperaturePolycrystalline Silicon, a LTPS) top gate type thin film transistor.
Generally speaking, when flaw appears in dot structure 100, prior art is normally cut along line of cut C, and at the position of dotted line sash 106 welding transparency conducting layer 190 and the first metal layer 140, so that transparency conducting layer 190 direct and the first metal layer 140 electric connections.But, cause often that to be fused into power not high because flatness layer 180 between transparency conducting layer 190 and the first metal layer 140 is too thick.Therefore, how to promote the repairing yields of dot structure 100, become current important topic.
Summary of the invention
The invention provides a kind of dot structure, its grid can be connected with channel layer.
The invention provides a kind of pixel method for repairing and mending, it has higher repairing yields.
The invention provides a kind of dot structure, it is disposed on the substrate, and electrically connects with an one scan line and a data wire.Dot structure comprises an active member and a pixel electrode.Active member is disposed on the substrate.Active member comprises a patterned semiconductor layer, a gate insulation layer, a grid and a contact conductor layer.Grid and scan line electrically connect.Gate insulation layer is between patterned semiconductor layer and grid.Patterned semiconductor layer has one first semiconductor block and the one second semiconductor block that is electrically insulated each other.The first semiconductor block is connected with grid.The contact conductor layer has the second contact conductor block that first a contact conductor block and that is connected with the first semiconductor block is connected with the second semiconductor block.The second semiconductor block and data wire electrically connect.Pixel electrode contacts the conductor block and electrically connects with first.
The invention provides a kind of method for repairing and mending, it is suitable for repairing a kind of dot structure.Dot structure is disposed at a substrate, and electrically connects with an one scan line and a data wire.Dot structure comprises an active member and a pixel electrode.Active member is disposed on the substrate, and active member comprises a patterned semiconductor layer, a gate insulation layer, a grid and a contact conductor layer.Grid and scan line electrically connect.Gate insulation layer is between patterned semiconductor layer and grid.The contact conductor layer has one and is connected in first between pixel electrode and the patterned semiconductor layer and contacts conductor block and and be connected in second between data wire and the patterned semiconductor layer and contact the conductor block.Method for repairing and mending comprises the cut-out patterned semiconductor layer, make patterned semiconductor layer be divided into one first semiconductor block and one second semiconductor block, be electrically insulated with the second semiconductor block that is electrically connected at data wire so that be electrically connected at the first semiconductor block of pixel electrode.Then, grid is connected with the first semiconductor block.
Because dot structure of the present invention has grid and the structure that the first semiconductor block is connected, can make grid via the first semiconductor block and the first contact conductor block and pixel electrode electric connection, and then make grid and pixel electrode have identical voltage.Compare with known dot structure, dot structure of the present invention is when repairing, the repairing position can not be subject to the position of pixel electrode, and the present invention is lower with the difficulty that the first semiconductor block of patterned semiconductor layer is connected with grid, and therefore pixel electrode of the present invention is easy to repair.
Description of drawings
Fig. 1 is the dot structure of prior art and the generalized section of repairing the position thereof.
Fig. 2 A is the schematic diagram of the dot structure of first embodiment of the invention.
Fig. 2 B is the generalized section of the dot structure of first embodiment of the invention.
Fig. 2 C is the schematic diagram after the dot structure process of Fig. 2 B is repaired.
Fig. 3 A is the generalized section of the dot structure of second embodiment of the invention.
Fig. 3 B is the schematic diagram after the dot structure process of Fig. 3 A is repaired.
Fig. 4 is the schematic diagram of a kind of electrooptical device of the present invention.
Drawing reference numeral:
100,200,200 ': dot structure
106: weld
110, S: substrate
120: semiconductor layer
130,214: gate insulation layer
140: the first metal layer
150: dielectric layer
152,154: contact hole
160: the second metal levels
170,270: the patterning protective layer
180: flatness layer
190: transparency conducting layer
212: patterned semiconductor layer
212a: the first semiconductor block
212b: the second semiconductor block
214: gate insulation layer
216: grid
218: the contact conductor layer
218D: drain electrode contact conductor block
218S: source electrode contact conductor block
220: pixel electrode
270 patterning protective layers
400: display floater
410: electronic component
500: electrooptical device
C: line of cut
H: opening
S: substrate
W: junction
292: bottom electrode
294: top electrode
290: reservior capacitor
Embodiment
For above-mentioned and other purposes, feature and advantage of the present invention can be become apparent, preferred embodiment cited below particularly, and cooperate appended graphicly, be described in detail below.
First embodiment
Fig. 2 A is the schematic diagram of the dot structure of first embodiment of the invention, and Fig. 2 B is the generalized section of the dot structure of first embodiment of the invention.Please be simultaneously with reference to Fig. 2 A and Fig. 2 B, the dot structure 200 of present embodiment is disposed on the substrate S, and dot structure 200 electrically connects with scan line SL and data wire DL.Can know by Fig. 2 B and to learn that the dot structure 200 of present embodiment comprises an active member 210 and a pixel electrode 220 that wherein active member 210 comprises a patterned semiconductor layer 212, a gate insulation layer 214, a grid 216 and a contact conductor layer 218.Grid 216 electrically connects with scan line SL.Gate insulation layer 214 is between patterned semiconductor layer 212 and grid 216.In addition, contact conductor layer 218 has one and is connected in first between pixel electrode 220 and the patterned semiconductor layer 212 and contacts conductor block 218D and and be connected in second between data wire DL and the patterned semiconductor layer 212 and contact conductor block 218S.In other words, in Fig. 2 B, the first contact conductor block 218D, the second contact conductor block 218S and data wire DL define out via patterning contact conductor layer 218 backs.In addition, the first contact conductor block 218D also can be described as drain electrode, and the second contact conductor block 218S also can be described as source electrode.
In the present embodiment, semiconductor layer 212 can be single layer structure or sandwich construction, and its material can be polysilicon.In other words, active member 210 is a polycrystalline SiTFT, but be not limited thereto, also can use the material of other lattice, as: amorphous silicon, monocrystalline silicon, microcrystal silicon, nanocrystal silicon or above-mentioned lattice have silicon compound or the germanic silicon compound of above-mentioned lattice or organic semiconductor or other suitable material or the above-mentioned combination of above-mentioned crystallographic system of alloy.Gate insulation layer 214 can be single layer structure or sandwich construction, and its material for example is that (as: silica, silicon nitride, silicon oxynitride, aluminium oxide, tantalum oxide, fluorine silex glass (fluorinated oxide, FSG) or other material or above-mentioned combination), organic material are (as: as photoresistance, poly-propionyl ether (polyarylene ether for inorganic; PAE), polyamides class, polyesters, polyalcohols, polyalkenes, benzocyclobutene (benzocyclclobutene; BCB), HSQ (hydrogensilsesquioxane), MSQ (methyl silesquioxane), silica hydrocarbons (SiOC-H), polyethers, the polyketone class, the polyacetals class, poly-phenols, poly-naphthenic, the polyalkylene oxide class, the carbene class, poly-phenolic, or other material, or above-mentioned combination), or above-mentioned combination, and grid 216 can be single layer structure or sandwich construction, and its material for example is a gold, silver, copper, tin, aluminium, plumbous, titanium, molybdenum, neodymium, tungsten, niobium, hafnium, chromium, tantalum or other metal materials, or above-mentioned nitride, or above-mentioned oxide, or above-mentioned alloy, conducting polymer, or above-mentioned combination.In addition, contact conductor layer 218 can be single layer structure or sandwich construction, and its material for example is a gold, silver, copper, tin, aluminium, plumbous, titanium, molybdenum, neodymium, tungsten, niobium, hafnium, chromium, tantalum or other metal materials, or above-mentioned nitride, or above-mentioned oxide, or above-mentioned alloy, conducting polymer, or above-mentioned combination, and pixel electrode 220 can be single layer structure or sandwich construction, and its material for example is non-transparent material (as: gold, silver, copper, tin, aluminium, plumbous, titanium, molybdenum, neodymium, tungsten, niobium, hafnium, chromium, tantalum or other metal materials, or above-mentioned nitride, or above-mentioned oxide, or above-mentioned alloy, or above-mentioned combination), transparent material (as: indium tin oxide, indium-zinc oxide, indium tin zinc oxide, hafnium oxide, zinc oxide, aluminium oxide, the aluminium tin-oxide, the aluminium zinc oxide, the cadmium tin-oxide, cadmium zinc oxide etc. or above-mentioned combination), conducting polymer, or above-mentioned combination.Present embodiment is to be used as the enforcement example with the indium tin oxide of transparent material as pixel electrode 220, but is not limited thereto.When dot structure 200 was the penetration dot structure, pixel electrode 220 also can adopt the electric conducting material with transparent characteristic to make.When dot structure 200 was the reflective pixel structure, pixel electrode 220 also can adopt had reflection characteristic or nontransparent electric conducting material is made.Moreover when dot structure 200 was transflective pixel structure, pixel electrode 220 also can adopt simultaneously to have reflection characteristic or nontransparent electric conducting material and transparent conductive material and makes.
Fig. 2 C is the schematic diagram after the dot structure process of Fig. 2 B is repaired.Please refer to Fig. 2 C, when dot structure 200 flaw occurs and can't normal operation, present embodiment can cut into two the first semiconductor block 212a separated from one another and the second semiconductor block 212b at line of cut C place with patterned semiconductor layer 212 earlier, is electrically insulated with the second semiconductor block 212b that is electrically connected at data wire DL so that be electrically connected at the first semiconductor block 212a of pixel electrode 220.Afterwards, grid 216 is connected with the first semiconductor block 212a, by Fig. 2 C as can be known, the junction W of the grid 216 and the first semiconductor block 212a is normally below grid 216 again.But must it should be noted that above-mentioned steps, after also can connecting grid 216 earlier and the first semiconductor block 212a being connected, at line of cut C place patterned semiconductor layer 212 is cut into two the first semiconductor block 212a separated from one another and the second semiconductor block 212b again, be electrically insulated with the second semiconductor block 212b that is electrically connected at data wire DL so that be electrically connected at the first semiconductor block 212a of pixel electrode 220.In addition; in the present embodiment; preferably; dot structure 200 comprises that also a patterning protective layer 270 is covered on the active member 210; wherein patterning protective layer 270 has an opening H; and pixel electrode 220 electrically connects by the opening H and the first semiconductor block 212a, but is not limited thereto, and dot structure also can not comprise patterning protective layer 270.
In the present embodiment, the method that patterned semiconductor layer 212 is cut into the first semiconductor block 212a and the second semiconductor block 212b for example is laser cutting (laser cutting), as backside laser cutting (promptly in order to the laser beam of cutting pattern semiconductor layer 212 from substrate S below incident), positive laser cutting (promptly in order to the laser beam of cutting pattern semiconductor layer 212 from substrate S top incident) or simultaneously from the front and the back side apply laser cutting.In addition, in the present embodiment, the method that grid 216 is connected with the first semiconductor block 212a for example is laser welding (laser welding), as backside laser welding (promptly in order to the laser beam of the welding grid 216 and the first semiconductor block 212a from substrate S below incident), front laser welding (promptly in order to the incident above the substrate S of the laser beam of welding grid 216 and the first semiconductor block 212a) or simultaneously from the front and the back side apply laser welding.In other embodiments; also but a. earlier cuts into the pixel electrode 220 of grid 216 tops at least one zone (not illustrating) and separates with another part (not illustrating) of the pixel electrode 220 of non-grid 216 tops and be electrically insulated; then; apply as above-mentioned front laser and backside laser wherein at least one; connect each rete (as: pixel electrode that this is regional on this zone; be covered in the dielectric layer (not mark) of one deck at least of grid top; for example: inner layer dielectric layer; gate insulator; the patterning protective layer; first semiconductor block 212a and the grid of flatness layer or the like and patterned semiconductor layer 212; then; form another conductor layer again on this zone; the first semiconductor block 212a and the grid 216 that connect patterned semiconductor layer 212; but should the zone and this another zone electrically connect; b. as the described mode of a.; but be divided into two when regional in pixel electrode 220; to be positioned at the pixel electrode 220 of grid 216 tops or each rete in this zone of company removes together; the method that removes, for example: etching; laser divests or the like; c. alternate manner; or above-mentioned combination.
Hold above-mentionedly, the present invention also can exchange the step of cutting pattern semiconductor layer 212 and the step that connects the grid 216 and the first semiconductor block 212a, and in other words, the present invention does not limit the execution sequence of aforesaid cutting step and Connection Step.
By Fig. 2 C as can be known, after finishing above-mentioned repairing action, patterned semiconductor layer 212 in the dot structure 200 just has the first semiconductor block 212a and the second semiconductor block 212b that is electrically insulated each other, and grid 216 can be by the first semiconductor block 212a and the first contact conductor block 218D and pixel electrode 220 electric connections.
For example, if dot structure 200 is applied in the display panels, and when the display mode of display panels is normal whitening (normally white), dot structure 200 can make the some flaw (dot defect) of display panels be repaired and be dim spot after through above-mentioned repairing action.In detail, when dot structure 200 is driven, the grid 216 that is connected with scan line SL (being illustrated in Fig. 2 A) can be applied in is enough to allow the first semiconductor block 212a present the voltage of conducting state, and at this moment, pixel electrode 220 just has the voltage identical with scan line SL.If to have evident difference owing to be enough to allow the first semiconductor block 212a present between the voltage of conducting state and the common voltage in the display panels (Vcom), wherein common voltage is bestowed and be example on the common electrode (not illustrating) of dot structure 200 subtend substrates, but be not limited thereto, wherein common voltage is bestowed at dot structure 200 on the common line (not illustrating) on the same substrate.The liquid crystal layer of dot structure 200 tops after therefore repairing can be subjected to tangible electric field action, makes that display mode is in the display panels of normal whitening, and the point (dot) that dot structure 200 corresponded to after the repairing is a dim spot.Certainly, if dot structure 200 is applied in the display panels, and the display mode of display panels is that the point (dot) that dot structure 200 corresponded to after then it is repaired is a bright spot when normally showing black (normally black).
Second embodiment
Fig. 3 A is the generalized section of the dot structure of second embodiment of the invention.Please refer to Fig. 3 A, the dot structure 200 of the dot structure 200 ' of present embodiment and first embodiment is similar, the two main difference part is: active member in the dot structure 200 ' 210 ' is used as example for horizontal double-gate film transistor (twogate TFT), but be not limited thereto, also can apply to the double-gate film transistor of vertical arrangement, its method for repairing and mending is also as the described mode of present embodiment.
Fig. 3 B is the schematic diagram after the dot structure process of Fig. 3 A is repaired.Please refer to Fig. 3 B, when dot structure 200 ' flaw occurs and can't normal operation, present embodiment can cut into two the first semiconductor block 212a separated from one another and the second semiconductor block 212b at line of cut C place with patterned semiconductor layer 212 earlier, is electrically insulated with the second semiconductor block 212b that is electrically connected at data wire DL so that be electrically connected at the first semiconductor block 212a of pixel electrode 220.Afterwards, grid 216a is connected with the first semiconductor block 212a, by Fig. 3 B as can be known, the junction W of the grid 216a and the first semiconductor block 212a is normally below grid 216a again.In the present embodiment, the method that patterned semiconductor layer 212 is cut into the first semiconductor block 212a and the second semiconductor block 212b for example is a laser cutting, as backside laser cutting and/or positive laser cutting.In addition, in the present embodiment, for example be laser welding with grid 216 with the method that the first semiconductor block 212a is connected, as front laser welding and/or backside laser welding.And other suitable method, also can be as the described mode of above-mentioned embodiment.
In addition, the present invention is that the thin-film transistor with top gate type serves as to implement example, but is not limited thereto, and in other embodiments, also can use the thin-film transistor of bottom gate type, preferably, is the thin-film transistor of contrary isoplanar bottom gate type structure, but still is not limited thereto.
What deserves to be mentioned is, in the present embodiment, preferably, dot structure 200 ' comprises that more a reservior capacitor 290 is example, and it is disposed at the below of pixel electrode 220, wherein reservior capacitor 290 comprises a top electrode 294 and a bottom electrode 292, and bottom electrode 292 contacts conductor block 218D electric connection with first.Shown in Fig. 3 A and Fig. 3 B, preferably, the composition of bottom electrode 292 is all example mutually with the composition of patterned semiconductor layer 212, but is not limited thereto.In other words, bottom electrode 292 is preferably by same film made example that becomes in same masking process with patterned semiconductor layer 212, but is not limited thereto.In addition, preferably, the composition of top electrode 294 is all example mutually with the composition of grid 216, but is not limited thereto.In other words, top electrode 294 is preferably by same film made example that becomes in same masking process with grid 216, but is not limited thereto.In addition, reservior capacitor 290 is also alternative to be disposed or does not dispose, and goes up demand according to design, and also optionally applies among first embodiment.
Moreover the foregoing description is to be example to apply to display panels, but is not limited thereto, and also can be used in the organic/inorganic electric exciting light emitting display panel (as: fluorescence electric exciting light emitting display panel, phosphorescence electric exciting light emitting display panel or above-mentioned combination).Wherein, the organic electric-excitation luminescent material of organic electric-excitation luminescent displaying panel comprises micromolecule luminescent material, high-molecular luminous material or above-mentioned combination.Display panels for example comprises: the penetrating type display floater, the semi penetration type display floater, reflective display panel, colored filter display floater of (color filter on array) on active layers, active layers display floater of (array on color filter) on colored filter, vertical orientation type (VA) display floater, horizontal switch type (IPS) display floater, multi-domain perpendicular alignment-type (MVA) display floater, twisted nematic (TN) display floater, super-twist nematic (STN) display floater, pattern vertical orientation type (PVA) display floater, super pattern vertical orientation type (S-PVA) display floater, the advanced person is type (ASV) display floater with great visual angle, fringe field switch type (FFS) display floater, continuous fireworks shape arrange type (CPA) display floater, axial symmetry is arranged micella type (ASM) display floater, optical compensation curved arrange type (OCB) display floater, super horizontal switch type (S-IPS) display floater, advanced super horizontal switch type (AS-IPS) display floater, extreme edge electric field switch type (UFFS) display floater, stabilizing polymer alignment-type display floater, double vision angle type (dual-view) display floater, three visual angle type (triple-view) display floaters, 3 d display (three-dimensional) or other profile plate, or above-mentioned combination.Again, above-mentioned display floater and method thereof also can be used on electrooptical device and the method thereof.As shown in Figure 4, the schematic diagram of electrooptical device.The display floater 400 that is formed by above-mentioned dot structure 200 arrayed can be combined into an electrooptical device 500 with electronic component 410.At this, electronic component 410 comprises as control element, executive component, treatment element, input element, memory cell, driving element, light-emitting component, protection component, sensing element, detecting element or other function element or aforesaid combination.And the type of electrooptical device comprises the panel in portable product (as mobile phone, video camera, camera, mobile computer, game machine, wrist-watch, music player, electronic mail transceiver, map navigator, digital photo or similar products like), video and audio product (as audio-visual projector or similar products like), screen, TV, billboard, the projector etc.
Though the present invention discloses as above with embodiment; right its is not in order to qualification the present invention, any those skilled in the art, without departing from the spirit and scope of the present invention; when can doing a little change and retouching, so protection scope of the present invention is when being as the criterion with defining of claim.
Claims (15)
1. a dot structure is disposed on the substrate, and electrically connects with an one scan line and a data wire, it is characterized in that described dot structure comprises:
One active member, be disposed on the described substrate, described active member comprises a patterned semiconductor layer, one gate insulation layer, one grid and a contact conductor layer, wherein said grid and described scan line electrically connect, described gate insulation layer is between described patterned semiconductor layer and described grid, described patterned semiconductor layer has one first semiconductor block and the one second semiconductor block that is electrically insulated each other, the described first semiconductor block is connected with described grid, described contact conductor layer has the second contact conductor block that first a contact conductor block and that is connected with the described first semiconductor block is connected with the described second semiconductor block, and described second semiconductor block and described data wire electrically connect; And
One pixel electrode first contacts the conductor block and electrically connects with this.
2. dot structure as claimed in claim 1, active member comprises top gate type thin film transistor.
3. dot structure as claimed in claim 1 is characterized in that described dot structure also comprises a reservior capacitor, and wherein said reservior capacitor comprises a top electrode and a bottom electrode, and described bottom electrode contacts the electric connection of conductor block with described first.
4. dot structure as claimed in claim 3 is characterized in that, the composition of described bottom electrode is identical with the composition of described patterned semiconductor layer.
5. dot structure as claimed in claim 3 is characterized in that, the composition of described top electrode is identical with the composition of this grid.
6. dot structure as claimed in claim 1; it is characterized in that; described dot structure comprises that also a patterning protective layer is covered on the described active member, and wherein said patterning protective layer has an opening, and described pixel electrode electrically connects by described opening and the described first semiconductor block.
7. method for repairing and mending, be suitable for repairing a kind of dot structure, it is characterized in that, described dot structure is disposed at a substrate, and electrically connect with one scan line and a data wire, described dot structure comprises an active member and a pixel electrode, described active member is disposed on the described substrate, and described active member comprises a patterned semiconductor layer, one gate insulation layer, one grid and a contact conductor layer, wherein said grid and described scan line electrically connect, described gate insulation layer is between described patterned semiconductor layer and described grid, described contact conductor layer has one and is connected in first between described pixel electrode and the described patterned semiconductor layer and contacts conductor block and and be connected in second between described data wire and the described patterned semiconductor layer and contact the conductor block, and this method for repairing and mending comprises:
Cut off this patterned semiconductor layer, make described semiconductor layer be divided into one first semiconductor block and one second semiconductor block, be electrically insulated with the described second semiconductor block that is electrically connected at described data wire so that be electrically connected at the first semiconductor block of described pixel electrode; And
Described grid is connected with the described first semiconductor block.
8. method for repairing and mending as claimed in claim 7 is characterized in that, the method for the described semiconductor layer of described cut-out comprises laser cutting.
9. method for repairing and mending as claimed in claim 8 is characterized in that, described laser cutting comprise backside laser cutting and positive laser cutting wherein at least one.
10. method for repairing and mending as claimed in claim 7 is characterized in that, described grid is comprised laser welding with the method that the described first semiconductor block is connected.
11. method for repairing and mending as claimed in claim 10 is characterized in that, described laser welding comprise front laser welding and backside laser welding wherein at least one.
12. a display floater is characterized in that described display floater comprises dot structure as claimed in claim 1.
13. an electrooptical device is characterized in that described electrooptical device comprises display floater as claimed in claim 12.
14. the method for repairing and mending of a display floater is characterized in that, the method for repairing and mending of described display floater comprises the method for repairing and mending as dot structure as described in the claim 7.
15. the method for repairing and mending of an electrooptical device is characterized in that, the method for repairing and mending of described electrooptical device comprises the method for repairing and mending as display floater as described in the claim 14.
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| CNB200810095520XA CN100559598C (en) | 2008-04-23 | 2008-04-23 | Dot structure, display floater, electrooptical device and method for repairing and mending thereof |
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| CNB200810095520XA CN100559598C (en) | 2008-04-23 | 2008-04-23 | Dot structure, display floater, electrooptical device and method for repairing and mending thereof |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103489872A (en) * | 2013-06-20 | 2014-01-01 | 友达光电股份有限公司 | Pixel structure |
| CN104216184A (en) * | 2013-05-31 | 2014-12-17 | 群创光电股份有限公司 | Display device |
| CN105242468A (en) * | 2015-10-27 | 2016-01-13 | 深圳市华星光电技术有限公司 | Liquid crystal display panel reducing parasitic capacitances and manufacturing method thereof |
| CN106816107A (en) * | 2015-11-30 | 2017-06-09 | 三星电子株式会社 | Display device and the electronic equipment including display device |
| CN112951865A (en) * | 2019-12-11 | 2021-06-11 | 财团法人工业技术研究院 | Pixel structure, manufacturing method thereof and display with pixel structure |
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2008
- 2008-04-23 CN CNB200810095520XA patent/CN100559598C/en active Active
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104216184A (en) * | 2013-05-31 | 2014-12-17 | 群创光电股份有限公司 | Display device |
| CN103489872A (en) * | 2013-06-20 | 2014-01-01 | 友达光电股份有限公司 | Pixel structure |
| CN103489872B (en) * | 2013-06-20 | 2015-10-28 | 友达光电股份有限公司 | Pixel structure |
| CN105242468A (en) * | 2015-10-27 | 2016-01-13 | 深圳市华星光电技术有限公司 | Liquid crystal display panel reducing parasitic capacitances and manufacturing method thereof |
| CN106816107A (en) * | 2015-11-30 | 2017-06-09 | 三星电子株式会社 | Display device and the electronic equipment including display device |
| CN112951865A (en) * | 2019-12-11 | 2021-06-11 | 财团法人工业技术研究院 | Pixel structure, manufacturing method thereof and display with pixel structure |
| CN112951865B (en) * | 2019-12-11 | 2024-04-05 | 财团法人工业技术研究院 | Pixel structure, manufacturing method thereof and display with pixel structure |
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| CN100559598C (en) | 2009-11-11 |
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